CN106784181A - Improve the method and structure of green glow or longer wavelength InGaN quantum well radiation efficiency - Google Patents
Improve the method and structure of green glow or longer wavelength InGaN quantum well radiation efficiency Download PDFInfo
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- CN106784181A CN106784181A CN201611153017.6A CN201611153017A CN106784181A CN 106784181 A CN106784181 A CN 106784181A CN 201611153017 A CN201611153017 A CN 201611153017A CN 106784181 A CN106784181 A CN 106784181A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
Abstract
The invention discloses a kind of method and structure for improving green glow or longer wavelength InGaN quantum well radiation efficiency.The described method comprises the following steps：Using a substrate with atomic stepses, the angle of chamfer that adjacent atom step is formed on the substrate is more than 0.2 °；Cushion is formed on atomic stepses face；High temperature n-type GaN layer is formed on the buffer layer；InGaN SQWs are formed on high temperature n-type GaN layer.It is of the invention that substrate growth green glow or longer wavelength InGaN Quantum well active district of the method for InGaN quantum well radiation efficiency using angle of chamfer more than 0.2 ° are improved using big angle of chamfer substrate, the atomic stepses stream growth of green glow or longer wavelength InGaN SQWs can be realized, improve its pattern, and improve the internal quantum efficiency of InGaN SQWs.Additionally, in both having can be widely applied to GaN base green glow or longer wavelength LED, GaN base green glow or longer wavelength laser by the InGaN SQWs that the above method is prepared, it is also possible to be widely used in MQW solar cell.
Description
Technical field
The invention belongs to technical field of semiconductors, specifically, it is related to a kind of raising green glow or longer wavelength InGaN quantum
The method and structure of trap luminous efficiency.
Background technology
GaN base green glow or longer wavelength laser and LED have application widely in terms of semiconductor is shown with illumination.
, used as GaN base laser and the core texture of LED, its growth behavior, pattern are to InGaN SQWs for InGaN Quantum well active districts
Optical property and the performance of device have very important influence.
Because the equilibrium vapour pressure of InN is very high, and In-N bond energys are weak, cause the decomposition temperature of InN low.Therefore, it is high
The InGaN of In components must grow to ensure that enough In are incorporated to epitaxial layer at low temperature.General MOCVD grows InGaN
Temperature probably between 650 DEG C~750 DEG C.But generally under relatively low growth temperature, the mobility of surface atom is low, migration
Apart from short.For green glow or longer wavelength InGaN SQWs, because InGaN quantum well layers have In components higher to obtain length
Wavelength lights, when being grown using the method for MOCVD, it is necessary to lower temperature and In/Ga ratios higher.When smaller in angle of chamfer
Substrate Epitaxial growth when, because atomic stepses width is larger, atom can not be moved to when atom falls sample surfaces
The position that step edge is adapted to be incorporated to is incorporated to, but directly in atomic stepses surface nucleation, in this case the AFM shapes of InGaN
Looks are usually the pattern of some two-dimensional islands being distributed along atomic stepses.Regrowth quantum is built on the pattern on this two-dimentional island
Layer, can cause the rough surface between InGaN SQWs and quantum barrier layer, and then influence the optics of InGaN Quantum well active districts
Performance.
The content of the invention
In order to solve above-mentioned problems of the prior art, it is an object of the invention to provide one kind raising green glow or more
The method of long wavelength's InGaN quantum well radiation efficiency, so as to obtain in the growth of atomic stepses stream and internal quantum efficiency InGaN high
SQW.
The invention provides a kind of method for improving green glow or longer wavelength InGaN quantum well radiation efficiency, it includes：
Using a substrate with atomic stepses, wherein the angle of chamfer that adjacent atom step is formed on the substrate is more than
0.2°；
Cushion is formed on the atomic stepses face；
High temperature n-type GaN layer is formed on the cushion；
InGaN SQWs are formed on the high temperature n-type GaN layer.
Further, the angle of chamfer for being formed per two neighboring atomic stepses is equal；And/or adjacent atom platform on the substrate
It is stepped into angle of chamfer be 0.2 °~15 °.
Further, the cushion undopes GaN layer for low temperature, and the undope thickness of GaN layer of the low temperature is 10nm
~30nm.
Further, the thickness of the high temperature n-type GaN layer is less than 5000nm.
Further, the electron concentration of the high temperature n-type GaN layer is 1017cm-3To 1019cm-3Between.
Further, the green glow or longer wavelength InGaN SQWs are the In for undopingxGa1-xN SQWs.
Further, the InxGa1-xThe thickness of N SQWs is 1nm~5nm, and the InxGa1-xThe In groups of N SQWs
Divide and increase with the increase of InGaN quantum well radiation wavelength.
Further, the InGaN SQWs for being formed on every one-level atomic stepses are in atomic stepses manifold looks.
Further, the atomic stepses height of the InGaN SQWs is highly equal with adjacent one-level atomic stepses high.
Green glow or longer wavelength InGaN SQWs hair are improved using method as described above present invention also offers one kind
The structure of light efficiency, including：Substrate, with atomic stepses, and the angle of chamfer that adjacent atom step is formed is more than 0.2 °；Buffering
Layer, is formed on the atomic stepses face；High temperature n-type GaN layer, is formed on the cushion；InGaN SQWs, are formed in
On the high temperature n-type GaN layer.
Beneficial effects of the present invention：The method for improving green glow or longer wavelength InGaN quantum well radiation efficiency of the invention
Substrate growth green glow or longer wavelength InGaN Quantum well active districts using angle of chamfer more than 0.2 °, it is possible to achieve green glow or more
The atomic stepses stream growth of long wavelength's InGaN SQWs, improves its pattern, and improve the internal quantum efficiency of InGaN SQWs.This
Outward, the InGaN SQWs for being prepared by the above method both can be widely applied to GaN base green glow or longer wavelength LED, GaN
In base green glow or longer wavelength laser, it is also possible to be widely used in MQW solar cell.
Brief description of the drawings
By the following description carried out with reference to accompanying drawing, above and other aspect of embodiments of the invention, feature and advantage
Will become clearer, in accompanying drawing：
The step of Fig. 1 is the method for improving green glow or longer wavelength InGaN quantum well radiation efficiency of the embodiment of the present invention
Flow chart；
Fig. 2 is the material of the green glow or longer wavelength InGaN quantum well structures prepared by the method for the embodiment of the present invention
Material structural representation；
Fig. 3 is the vertical of the green glow that is prepared by the method for the embodiment of the present invention or longer wavelength InGaN quantum well structures
Body figure；
Fig. 4 is the angle of chamfer and atomic stepses wide association schematic diagram of the substrate of the embodiment of the present invention；
Fig. 5 (a) is the AFM shape appearance figures of the green glow InGaN SQWs formed in the GaN substrate that mis-cut angle is 0.2 °；
Fig. 5 (b) is the AFM shape appearance figures of the green glow InGaN SQWs formed in the GaN substrate that mis-cut angle is 0.54 °；
Fig. 5 (c) is the AFM shape appearance figures of the green glow InGaN SQWs formed in the GaN substrate that mis-cut angle is 0.6 °；
Fig. 6 (a) is the alternating temperature PL tests of the green glow InGaN SQWs formed in the GaN substrate that mis-cut angle is 0.2 °
Result curve figure；
Fig. 6 (b) is the alternating temperature PL tests of the green glow InGaN SQWs formed in the GaN substrate that mis-cut angle is 0.56 °
Result curve figure.
Specific embodiment
Hereinafter, with reference to the accompanying drawings to describing embodiments of the invention in detail.However, it is possible to come real in many different forms
Apply the present invention, and the present invention should not be construed as limited to the specific embodiment that illustrates here.Conversely, there is provided these implementations
Example is in order to explain principle of the invention and its practical application, so that others skilled in the art are it will be appreciated that of the invention
Various embodiments and the various modifications for being suitable for specific intended application.Identical label can be used in entire disclosure and accompanying drawing
Represent identical element.
In the accompanying drawings, in order that component clearly shows, the thickness in layer and region is exaggerated.Additionally, identical label is whole
Can be used to represent identical element in individual specification and drawings.
The step of Fig. 1 is the method for improving green glow or longer wavelength InGaN quantum well radiation efficiency of the embodiment of the present invention
Flow chart.
Reference picture 1, green glow or longer wavelength InGaN quantum well radiation efficiency are improved The embodiment provides one kind
Method, it is comprised the following steps：
Step S1：Using a substrate with atomic stepses, wherein the beveling that adjacent atom step is formed on the substrate
Angle is more than 0.2 °；
Step S2：Cushion is formed on the atomic stepses face；
Step S3：High temperature n-type GaN layer is formed on the cushion；
Step S4：InGaN SQWs are formed on the high temperature n-type GaN layer.
Fig. 2 is the material structure schematic diagram of the InGaN quantum well structures prepared by the method for the embodiment of the present invention.Figure
3 is the stereogram of the InGaN quantum well structures prepared by the method for the embodiment of the present invention.
Reference picture 2 and Fig. 3, using the above method, prepare as shown in Figures 2 and 3 for improving green glow or longer
The structure of wavelength InGaN quantum well radiation efficiency, herein, referred to as InGaN quantum well structures.The InGaN quantum well structures
Including substrate 1, cushion 2, high temperature n-type GaN layer 3, InGaN SQWs 4.Wherein, substrate 1 has atomic stepses, and adjacent original
The angle of chamfer that sub- step is formed is more than 0.2 °.Cushion 2 is formed on the atomic stepses face.High temperature n-type GaN layer 3 is formed in
On cushion 2.InGaN SQWs 4 are formed on the high temperature n-type GaN layer 3.
With reference to step S1, substrate 1 can be GaN substrate, or Sapphire Substrate or SiC substrate or Si substrates.This
Invention is not restricted to this.
Fig. 4 is the angle of chamfer and atomic stepses wide association schematic diagram of the substrate of the embodiment of the present invention.
Reduce the surface atom step width of substrate 1, high In ingredient green glow or longer wavelength InGaN amounts are grown at low temperature
During sub- trap 4, atom can move to atomic stepses edge and be incorporated to, and be grown with atomic stepses stream growth pattern, the surface for having obtained
Pattern and crystal mass.As shown in figure 4, Fig. 4 is angle of chamfer and atomic stepses wide association schematic diagram.It is assumed that substrate 1 is adjacent
The gradient between two atomic stepses is chamfer angles alpha, and the height of atomic stepses is h, and Lt is atomic stepses width, then tan α=h/
Lt, i.e. Lt=h/tan α.So when the timing of atomic stepses height h mono-, atomic stepses width Lt with the chamfer angles alpha of substrate 1 increase
And reduce.In the present embodiment, the gradient between two neighboring atomic stepses is more than 0.2 °, i.e., be more than 0.2 ° using chamfer angles alpha
Substrate 1 growth high In ingredient green glow or longer wavelength InGaN SQWs 4.When the chamfer angles alpha of substrate 1 is bigger, surface atom platform
The width of rank is smaller, and atom can move to atomic stepses edge and be incorporated to during grown at low temperature, forms the growth of atomic stepses stream
Pattern.Further, the chamfer angles alpha that adjacent atom step is formed may be greater than 0.2 ° less than 15 °, be measured for green glow InGaN
Sub- trap is preferably 0.4 °~0.7 °, and for longer wavelength InGaN SQWs, optimal angle of chamfer is bigger, and the present invention is not intended to limit
In this.
Preferably, in the present embodiment, the atomic stepses are regular increment type step.Per two neighboring atomic stepses shape
Into chamfer angles alpha it is equal.
With reference to step S2, S3, S4, the growing method of cushion 2, high temperature n-type GaN layer 3 and InGaN SQWs 4 can be
MOCVD can also be MBE.MOCVD refers to a kind of new gas phase grown up on the basis of vapor phase epitaxial growth (VPE)
Growth technology.MBE refers to a kind of crystal technique of molecular beam epitaxy.But the present invention is not restricted to this.
Specifically, with reference to step S2, cushion 2 is formed on the atomic stepses face of substrate 1, and cushion 2 is specially low temperature
Undope GaN layer.Specifically, low temperature undope GaN layer thickness be 10nm~30nm.
With reference to step S3, high temperature n-type GaN layer 3 is formed on the buffer layer 2, and its thickness is less than 5000nm, and electron concentration exists
1017cm-3To 1019cm-3Between.
In the present embodiment, low temperature undopes GaN layer (cushion 2) and high temperature n-type GaN layer 3 is sequentially formed at atom platform
On the upper surface of rank, i.e., on the surface (as shown in Figure 4) of a width of Lt of atomic stepses.
With reference to step S4, InGaN SQWs 4 are the In for undopingxGa1-xN SQWs.InxGa1-xThe thickness of N SQWs is
Between 1nm~5nm, its In component increases with the increase of InGaN quantum well radiation wavelength, and such as emission wavelength is 520nm's
In components in InGaN SQWs are about 25%, and the In components in the longer InGaN SQWs of emission wavelength are also higher.
As can be known from Fig. 3, it is in atomic stepses manifold looks per the InGaN SQWs 4 on one-level atomic stepses, and it is former per one-level
InGaN SQWs 4 on sub- step are covered with the atomic stepses just.InGaN SQWs 4 are distributed in atomic stepses level in other words
Step surface outer.More specifically, the upper surface flush of the senior atomic stepses adjacent thereto of InGaN SQWs 4, in other words they
On sustained height (same level).
The method that the big angle of chamfer substrate of use according to embodiments of the present invention improves InGaN quantum well radiation efficiency, uses
The big substrate 1 of angle of chamfer comes grown buffer layer 2, high temperature n-type GaN layer 3, InGaN SQWs 4 successively, due to the atomic stepses of substrate 1
Narrow width, therefore under specified temp particular growth speed grow green glow or longer wavelength InGaN SQWs 4 when, atom
Migration distance is certain, and when the narrower width of atomic stepses, atom has bigger probability to move to atomic stepses edge to be incorporated to atom
Step, so as to form atomic stepses stream growth pattern.The original that internal quantum efficiency finds the embodiment of the present invention is tested by alternating temperature PL
The InGaN SQWs 4 of sub- step stream growth pattern have internal quantum efficiency higher.
Fig. 5 (a) is the AFM shape appearance figures of the InGaN SQWs 4 formed in the GaN substrate that mis-cut angle is 0.2 °.Fig. 5
B () is the AFM shape appearance figures of the InGaN SQWs formed in the GaN substrate that mis-cut angle is 0.54 °.Fig. 5 (c) is in beveling
Angle is the AFM shape appearance figures of the InGaN SQWs formed in 0.6 ° of GaN substrate.
It should be noted that using green glow InGaN SQWs in the test.By the AFM of Fig. 5 (a)~Fig. 5 (c)
Pattern test result understands that the surface topography of the green glow InGaN SQWs 4 grown on the less substrate 1 of angle of chamfer is along original
The two-dimentional island pattern of sub- stepped profile, and atomic stepses width is larger.The green glow grown on the larger substrate 1 of angle of chamfer
The surface topography of InGaN SQWs 4 is atomic stepses manifold looks, and atomic stepses width is smaller.
Fig. 6 (a) is the alternating temperature PL test results of the InGaN SQWs formed in the GaN substrate that mis-cut angle is 0.2 °
Curve map.Fig. 6 (b) is the alternating temperature PL tests of the green glow InGaN SQWs formed in the GaN substrate that mis-cut angle is 0.56 °
Result curve figure.Wherein, what abscissa was represented be 1000 divided by temperature numerical value, what ordinate was represented is PL integrated intensities.
With reference to Fig. 6 (a) and Fig. 6 (b) as can be seen that when angle of chamfer increases to 0.56 °, green glow InGaN SQWs 4 from 0.2 °
Internal quantum efficiency (IQE) increase to 3.5% from 0.67%.Therefore the substrate 1 using angle of chamfer more than 0.2 ° grows green glow
InGaN SQWs 4 can effectively improve the internal quantum efficiency of green glow InGaN SQWs 4.
In sum, embodiments in accordance with the present invention, substrate growth green glow or more long wave using angle of chamfer more than 0.2 °
InGaN Quantum well active districts long, it is possible to achieve the atomic stepses stream growth of green glow or longer wavelength InGaN SQWs, improve it
Pattern, and improve the internal quantum efficiency of InGaN SQWs.Additionally, both may be used by the InGaN SQWs that the above method is prepared
In being widely used in GaN base green glow or longer wavelength LED, GaN base green glow or longer wavelength laser, it is also possible to extensive use
In MQW solar cell.
Although the present invention has shown and described with reference to specific embodiment, it should be appreciated by those skilled in the art that：
In the case where the spirit and scope of the present invention limited by claim and its equivalent are not departed from, can carry out herein form and
Various change in details.
Claims (10)
1. a kind of method for improving green glow or longer wavelength InGaN quantum well radiation efficiency, it is characterised in that including：
Using a substrate with atomic stepses, the angle of chamfer that adjacent atom step is formed on the substrate is more than 0.2 °；
Cushion is formed on the atomic stepses face；
High temperature n-type GaN layer is formed on the cushion；
InGaN SQWs are formed on the high temperature n-type GaN layer.
2. the method for improving green glow or longer wavelength InGaN quantum well radiation efficiency according to claim 1, its feature exists
In the angle of chamfer formed per two neighboring atomic stepses is equal；And/or the angle of chamfer that adjacent atom step is formed on the substrate
It is 0.2 °~15 °.
3. the method for improving green glow or longer wavelength InGaN quantum well radiation efficiency according to claim 1, its feature exists
In, the cushion for low temperature undopes GaN layer, the undope thickness of GaN layer of the low temperature is 10nm~30nm.
4. the method for improving green glow or longer wavelength InGaN quantum well radiation efficiency according to claim 1, its feature exists
In the thickness of the high temperature n-type GaN layer is less than 5000nm.
5. the method for improving green glow or longer wavelength InGaN quantum well radiation efficiency according to claim 1, its feature exists
In the electron concentration of the high temperature n-type GaN layer is 1017cm-3To 1019cm-3Between.
6. the method for improving green glow or longer wavelength InGaN quantum well radiation efficiency according to claim 1, its feature exists
In the InGaN SQWs are the In for undopingxGa1-xN SQWs.
7. the method for improving green glow or longer wavelength InGaN quantum well radiation efficiency according to claim 7, its feature exists
In the InxGa1-xThe thickness of N SQWs is 1nm~5nm, and the InxGa1-xThe In components of N SQWs are with InGaN quantum
The increase of trap emission wavelength and increase.
8. raising green glow according to any one of claim 1 to 7 or the side of longer wavelength InGaN quantum well radiation efficiency
Method, it is characterised in that the InGaN SQWs formed on per one-level atomic stepses are in atomic stepses manifold looks.
9. raising green glow according to any one of claim 1 to 7 or the side of longer wavelength InGaN quantum well radiation efficiency
Method, it is characterised in that the height of the InGaN SQWs is highly equal with adjacent one-level atomic stepses high.
10. a kind of method using described in any one of claim 1 to 9 come improve green glow or longer wavelength InGaN SQWs hair
The structure of light efficiency, it is characterised in that including：
Substrate, with atomic stepses, and the angle of chamfer that adjacent atom step is formed is more than 0.2 °；
Cushion, is formed on the atomic stepses face；
High temperature n-type GaN layer, is formed on the cushion；
InGaN SQWs, are formed on the high temperature n-type GaN layer.
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| CN108511323A (en) * | 2018-04-04 | 2018-09-07 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method and its application based on big angle of chamfer Sapphire Substrate epitaxial growth of gallium nitride |
| CN110491774A (en) * | 2019-08-19 | 2019-11-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of surface treatment method of Sapphire Substrate and its crucible used |
| CN112670383A (en) * | 2020-12-25 | 2021-04-16 | 广东省科学院半导体研究所 | Ultraviolet photoelectric device and preparation method thereof |
| CN113013302A (en) * | 2021-02-26 | 2021-06-22 | 东莞市中麒光电技术有限公司 | Preparation method of InGaN-based red light LED chip structure |
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