CN103247729A - Epitaxial structure for improving illumination efficiency of high-power GaN-base LED (light emitting diode) and growth method - Google Patents
Epitaxial structure for improving illumination efficiency of high-power GaN-base LED (light emitting diode) and growth method Download PDFInfo
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Abstract
The invention discloses an epitaxial structure for improving the illumination efficiency of a high-power GaN-base LED (light emitting diode) and a growth method. The epitaxial structure sequentially comprises a substrate, a low-temperature GaN buffer layer, a GaN non-doping layer, an N type GaN layer, a multiple quantum well layer, a luminescent quantum well layer, a low-temperature P type GaN layer, a PAlGaN/PInGaN current blocking layer, a high-temperature P type GaN layer and a P type contact layer from bottom to top, wherein the growth of the PAlGaN/PInGaN electron blocking layer is completed through nine steps. An optimized PAlGaN/PInGaN structure layer is introduced between the epitaxial structure L-PGaN and H-PGaN, and a general electron blocking layer is replaced for further improving the electron leakage stopping effect. Through the structure, the performance of the InGaN/GaN base LED can be greatly improved in case of high-current-density injection.
Description
Technical field
The invention belongs to InGaN/GaN based light-emitting diode (LED) technical field of material, particularly a kind of high power gallium nitride LED epitaxial structure and growing method can effectively improve the gallium nitride based light emitting diode luminous efficiency.
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Background technology
High-power GaN base InGaN/GaN multiple quantum well light emitting diode has been widely used in Landscape Lighting, auto bulb, traffic lights and general illumination.And for large-power light-emitting diodes, the efficient rapid drawdown problem under big electric current injects has become the matter of utmost importance that restriction GaN based high-power LED uses.Big electric current injects the too high and charge carrier that causes of carrier density in the active area down and is considered to cause the major reason of efficient rapid drawdown problem under the big injection leaking out active area before the radiation recombination.
In InGaN/GaN based light-emitting diode (LED) material structure, the P-AlGaN layer is usually located between quantum well and the P type GaN, its effect is as electronic barrier layer electronics to be limited to the quantum well zone, to overcome under the high current density injection condition, electronics overflows quantum well and causes degradation problem under the luminous efficiency.In order to address this problem, people propose a lot of new constructions, and the electronic barrier layer structure is widely used in laser diode with restriction electronics overflow problem.
Summary of the invention
The present invention is directed to above-mentioned problems of the prior art, a kind of epitaxial structure that improves high-power GaN base LED luminous efficiency is provided, between epitaxial structure L-PGaN and H-PGaN, introduce a kind of PAlGaN/PInGaN structure sheaf of optimization, replace common electronic barrier layer, with the effect of further raising block electrons leakage.This structure can the device performance of InGaN/GaN base LED has very big lifting so that high current density injects down.
Simultaneously, the present invention also provides the growing method of the electronic barrier layer of above-mentioned epitaxial structure.
For achieving the above object, the technical solution adopted in the present invention is as follows:
From bottom to top suitable of a kind of epitaxial structure that improves high-power GaN base LED luminous efficiency, this epitaxial structure
Order is followed successively by: substrate, low temperature GaN resilient coating, GaN non-doped layer, N-type GaN layer, multiple quantum well layer, luminescent quantum trap layer, low temperature P type GaN layer, PAlGaN/PInGaN electronic barrier layer, high temperature P type GaN layer and P type contact layer.
Improve the growing method of the epitaxial structure of above-mentioned high-power GaN base LED luminous efficiency, the growth of described PAlGaN/PInGaN electronic barrier layer was divided into for 9 steps:
(1) before growth PAlGaN/PInGaN electronic barrier layer, one deck GaN material 8a grows earlier;
(2) behind the GaN layer 8a growth ending, growth PAl
xGa
1-xN layer 8b, wherein 0.1＜x≤0.3;
(3) PAl
xGa
1-xBehind the N layer 8b growth ending, growth one deck PIn
aGa
1-aN layer 8c, wherein 0.1＜X≤0.3,0.1＜a≤0.5;
(4) PIn
aGa
1-aBehind the N layer 8c growth ending, growth one deck PAl
yGa
1-yN layer 8d, wherein 0.1＜a≤0.5,0.3＜y≤0.8;
(5) PAl
yGa
1-yBehind the N layer 8d growth ending, growth one deck PIn
bGa
1-bN layer 8e, the mole percent of In is higher than PIn in this layer
aGa
1-aThe component of In, wherein 0.3＜y≤0.8,0.2＜b≤0.9,0.1＜a≤0.5 among the N layer 8c;
(6) PIn
bGa
1-bBehind the N layer 8e growth ending, growth one deck PAl
yGa
1-yN layer 8f, wherein 0.2＜b≤0.9,0.3＜y≤0.8;
(7) PAl
yGa
1-yBehind the N layer 8f growth ending, growth one deck PIn
aGa
1-aN layer 8h, wherein 0.3＜y≤0.8,0.1＜a≤0.5;
(8) PIn
aGa
1-aBehind the N layer 7h growth ending, growth one deck PAl
xGa
1-xN layer 7i, wherein 0.1＜a≤0.5,0.1＜x≤0.3;
(9) PAl
xGa
1-xBehind the N layer 8i growth ending, growth one deck GaN material layer 8j, wherein 0.1＜x≤0.3.
Described (3) step PIn
aGa
1-aPDuring N layer 8c and (7) goes on foot
aGa
1-aThe flow of In is identical in the N layer 8h layer, wherein 0.1＜a≤0.5.
Described (5) step PIn
bGa
1-bThe mole percent of In is higher than (3) step PIn among the N layer 8e
aGa
1-aThe component of In, wherein 0.2＜b≤0.9,0.1＜a≤0.5 among the N layer 8c.
Described (2) step PAl
xGa
1-xPAl during N layer 8b and (4) goes on foot
yGa
1-yThe component of Al is that ladder increases gradually in the N layer 8d growth course, wherein 0.1＜x≤0.3,0.3＜y≤0.8.
Described (6) step PAl
yGa
1-yN layer 8f and (8) step PAl
xGa
1-xThe component of Al is that ladder reduces gradually in the N layer 8i growth course, and increase is identical with the amplitude that reduces, and the change of component of Al is the ridge branch
Cloth, wherein 0.3＜y≤0.8,0.1＜x≤0.3.
The invention has the advantages that, by in low temperature L-PGaN layer and high temperature H-PGaN layer, inserting a kind of PAlGaN/PInGaN electronic barrier layer of optimizing structure, on the one hand, overcome under the high current density injection condition, electronics overflows quantum well and causes degradation problem under the luminous efficiency.On the other hand, optimize the composition gradient optimization of Al among the PAlGaN in the layer, can reduce electronics and reveal, well electronics is limited to the quantum well zone and keeps high material crystals quality, improve the performance of device.Simultaneously, on the one hand, the Mg doping efficiency of P type AlGaN layer is very low, there is magnesium doping efficiency decline (Mg Droop) problem, we change by the height of adjusting AlGaN layer Al component, thereby control the growth rate of this optimization layer, solved Mg Droop problem well, promoted the Output optical power of device.On the other hand, optimize the PInGaN layer in the layer, can obtain the low resistance ohmic contact.Utilize the low activation energy of Mg among the InGaN to improve the hole concentration of P section bar material, and the polarization field effect of it and GaN can form local high hole concentration, thereby realize good P type ohmic contact.One deck GaN layer of growing respectively before and after the PAlGaN/PInGaN current barrier layer of optimizing structure, its main purpose is to improve crystal mass, promotes high current density and injects the device performance of LED down.
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Description of drawings
Fig. 1 is LED epitaxial structure schematic diagram provided by the present invention;
Fig. 2 is figure
1Middle PAlGaN/PInGaN electronic barrier layer epitaxial structure schematic diagram;
Fig. 3 be among Fig. 2 in the PAlGaN/PInGaN electronic barrier layer component ridge of Al change schematic diagram.
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Embodiment
Below embodiments of the invention are elaborated: present embodiment is being to implement under the prerequisite with the technical solution of the present invention, provided detailed execution mode and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
LED epitaxial structure as shown in Figure 1, order from bottom to top comprises successively: substrate 1, low temperature GaN resilient coating 2, GaN non-doped layer 3, N-type GaN layer 4, multiple quantum well layer 5, luminescent quantum trap layer 6, low temperature P type GaN layer 7, the PAlGaN/PInGaN electronic barrier layer 8 of optimizing structure, high temperature P type GaN layer 9, P type contact layer 10.
High power gallium nitride LED electronic barrier layer epitaxial growth method provided by the present invention comprises following concrete steps:
Step 1 is carried out high-temperature cleaning with substrate 1 and is handled 5-20min in 1000-1200 ℃ of hydrogen atmosphere, carry out nitrogen treatment then, and substrate 1 is the material that is fit to the growth of GaN base semiconductor epitaxial material, as sapphire, GaN and carborundum (SiC) monocrystalline;
Step 2 drops to temperature between 500-650 ℃, and growth thickness is the low temperature GaN resilient coating 2 of 20-30nm, and growth pressure is controlled between 300-760Torr, and V/III is than being 50-1000;
Step 3, behind described low temperature GaN resilient coating 2 growth endings, stop to feed trimethyl gallium (TMGa), underlayer temperature is increased between 900-1200 ℃, and described low temperature GaN resilient coating 2 is carried out the original position thermal anneal process, annealing time is at 5-30min, after the annealing, between 1000-1200 ℃, epitaxial growth thickness is the GaN non-doped layer 3 of 0.5-2 μ m with adjustment, growth pressure is between 100-500Torr, and V/III is than being 100-3000;
Step 4, behind described GaN non-doped layer 3 growth endings, the N-type GaN layer 4 of grow doping concentration stabilize, thickness are 2.4-8.4 μ m, and growth temperature is between 1000-1200 ℃, and pressure is between 100-600Torr, and V/III is than being 100-3000;
Step 5, behind described N-type GaN layer 4 growth ending, growth multiple quantum well layer 5, described multiple quantum well layer 5 comprise successively overlapping quantum well structure of 3-15, described quantum well structure is by In
xGa
1-xN (0＜x＜1) potential well layer and GaN barrier layer are grown successively and are formed.Described In
xGa
1-xThe growth temperature of N potential well layer is between 720-820 ℃, and pressure is between 100-500Torr, and V/III is than being 300-5000, and thickness is between 2-5nm; The growth temperature of described GaN barrier layer is between 820-920 ℃, and pressure is between 100-500Torr, and V/III is than being 300-5000, and thickness is between 8-15nm;
Step 6, behind described shallow quantum well layer 5 growth endings, light-emitting layer grows multiple quantum well layer 6, growth temperature is between 700-850 ℃, pressure is between 100-500 Torr, and V/III mol ratio is between 300-5000, and described luminescent layer Multiple Quantum Well 6 is by the In in 3-15 cycle
yGa
1-yN (x＜y＜1)/GaN Multiple Quantum Well is formed, and the thickness of described luminescent layer Multiple Quantum Well 6 is between 2-5nm; The molar constituent content of In is constant in the described luminescent layer Multiple Quantum Well 6, between 10%-50%; Barrier layer thickness is constant, and thickness is between 10-15nm, and growth temperature is between 820-920 ℃, and pressure is between 100-500 Torr, and V/III mol ratio is between 300-5000;
Step 7, behind described luminescent quantum trap layer 6 growth ending, growth thickness is the low temperature P type GaN layer 7 of 10-100nm, and growth temperature is between 620-820 ℃, and growth time is 5-35min, and pressure is between 100-500Torr, and V/III is than being 300-5000;
Step 8, behind described low temperature P type GaN layer 7 growth ending, growth thickness is the PAlGaN/PInGaN electronic barrier layer 8 of optimizing structure of 10-200nm, and growth temperature is between 800-1200 ℃, and growth time is 2-18min, pressure is between 50-500Torr, V/III is than being 10-1000, and the Ramp of the component of Al elder generation rises in the electronic barrier layer 8 total layers, and back Ramp descends, the amplitude of rise and fall is identical, and the change of component of Al is ridge and distributes.
Step 9, behind described PAlGaN/PInGaN electronic barrier layer 7 growth endings of optimizing structure, growth thickness is the high temperature P type GaN layer 9 of 100-800nm, growth temperature is between 850-950 ℃, growth time is 5-30min, and pressure is between 100-500Torr, and V/III is than being 300-5000;
Step 10, behind described high temperature P type GaN layer 9 growth ending, the P type contact layer 10 of growth thickness between 5-20nm, growth temperature is between 850-1050 ℃, and growth time is 1-10min, and pressure is between 100-500Torr, and V/III is than being 1000-20000;
Step 11, epitaxial growth is down to the temperature of reative cell between 650-800 ℃ after finishing, and adopts pure nitrogen gas atmosphere to carry out annealing in process 2-15min, is down to room temperature then, namely gets LED epitaxial structure as shown in Figure 1.
Subsequently, make single small size chip through subsequent machining technologies such as cleaning, deposition, photoetching and etchings.
Optimize structure in the above-mentioned steps eight PAlGaN/PInGaN electronic barrier layer 8 epitaxial structure as shown in Figure 2, its growing method comprises following 9 steps: (1) before growth PAlGaN/PInGaN current barrier layer, growth one deck GaN material 8a earlier; (2) behind the GaN layer 8a growth ending, the Ramp PAl that grows
xGa
1-xN (0.1＜x≤0.3) layer 8b, wherein the content gradually variational of Al raises in this layer growth; (3) PAl
xGa
1-xBehind N (0.1＜X≤0.3) the layer 8b growth ending, growth one deck PIn
aGa
1-aN (0.1＜a≤0.5) layer 8c; (4) behind the PInGaN layer 8c growth ending, the Ramp PAl that grows
yGa
1-yN (0.3＜y≤0.8) layer 8d, wherein the content gradually variational of Al raises in this layer growth of 8d layer; (5) PAl
yGa
1-yBehind N (0.3＜y≤0.8) the layer 8d growth ending, growth one deck PIn
bGa
1-bN (0.2＜b≤0.9) layer 8e, the mole percent of In is higher than the component of In in the 8c layer in this layer; (6) PIn
bGa
1-bBehind N (0.2＜b≤0.9) the layer 8e growth ending, the Ramp PAl that grows
yGa
1-yN (0.3＜y≤0.8) layer 8f, the content gradually variational of Al reduces in this layer Ramp growth course; (7) PAl
yGa
1-yBehind N (0.3＜y≤0.8) the layer 8f growth ending, growth one deck PIn
aGa
1-aN (0.1＜a≤0.5) layer 8h; (8) PIn
aGa
1-aBehind N (0.1＜a≤0.5) the layer 8h growth ending, the Ramp PAl that grows
xGa
1-xN (0.1＜x≤0.3) layer 8i, the content gradually variational of Al reduces in this layer Ramp growth course; (9) PAl
xGa
1-xBehind N (0.1＜x≤0.3) the layer 8i growth ending, growth one deck GaN material layer 8j.In above optimum organization structure PAlGaN/PInGaN electronic barrier layer, PIn
aGa
1-aN layer 8c
And PIn
aGa
1-aThe flow of In is identical in the N8h layer; PAl
xGa
1-xN layer 8b, PAl
yGa
1-yThe component of Al increases PAl gradually in the N layer 8d growth course
yGa
1-yN layer 8f, PAl
xGa
1-xThe component of Al reduces gradually in the N layer 8i growth course, the Ramp of the component of Al elder generation rises in the total layer, back Ramp descends, the amplitude of rise and fall is identical, the change of component of Al is ridge and distributes, as shown in Figure 3, the constituent content of the Al of 3 A, B, C is respectively 0,2 ~ 10%, 8 ~ 36% among the figure.
Present embodiment with high-purity hydrogen (H2) or nitrogen (N2) as carrier gas, respectively as Ga, Al, In and N source, use silane (SiH4) and two luxuriant magnesium (CP2Mg) respectively as N, P type dopant with trimethyl gallium (TMGa), triethyl-gallium (TEGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn) and ammonia (NH3).
Claims (6)
1. epitaxial structure that improves high-power GaN base LED luminous efficiency, it is characterized in that this epitaxial structure order from bottom to top is followed successively by: substrate, low temperature GaN resilient coating, GaN non-doped layer, N-type GaN layer, multiple quantum well layer, luminescent quantum trap layer, low temperature P type GaN layer, PAlGaN/PInGaN electronic barrier layer, high temperature P type GaN layer and P type contact layer.
2. the growing method of the epitaxial structure of the basic LED luminous efficiency of the high-power GaN of raising as claimed in claim 1 is characterized in that, the growth of described PAlGaN/PInGaN electronic barrier layer is divided into following 9 steps:
(1) before growth PAlGaN/PInGaN current barrier layer, one deck GaN material 8a grows earlier;
(2) behind the GaN layer 8a growth ending, growth PAl
xGa
1-xN layer 8b, wherein 0.1＜x≤0.3;
(3) PAl
xGa
1-xBehind the N layer 8b growth ending, growth one deck PIn
aGa
1-aN layer 8c, wherein 0.1＜X≤0.3,0.1＜a≤0.5;
(4) PIn
aGa
1-aBehind the N layer 8c growth ending, growth one deck PAl
yGa
1-yN layer 8d, wherein 0.1＜a≤0.5,0.3＜y≤0.8;
(5) PAl
yGa
1-yBehind the N layer 8d growth ending, growth one deck PIn
bGa
1-bN layer 8e, the mole percent of In is higher than PIn in this layer
aGa
1-aThe component of In, wherein 0.3＜y≤0.8,0.2＜b≤0.9,0.1＜a≤0.5 among the N layer 8c;
(6) PIn
bGa
1-bBehind the N layer 8e growth ending, growth one deck PAl
yGa
1-yN layer 8f, wherein 0.2＜b≤0.9,0.3＜y≤0.8;
(7) PAl
yGa
1-yBehind the N layer 8f growth ending, growth one deck PIn
aGa
1-aN layer 8h, wherein 0.3＜y≤0.8,0.1＜a≤0.5;
(8) PIn
aGa
1-aBehind the N layer 8h growth ending, growth one deck PAl
xGa
1-xN layer 8i, wherein 0.1＜a≤0.5,0.1＜x≤0.3;
(9) PAl
xGa
1-xBehind the N layer 8i growth ending, growth one deck GaN material layer 8j, wherein 0.1＜x≤0.3.
3. the growing method of the epitaxial structure of the high-power GaN base of raising according to claim 2 LED luminous efficiency is characterized in that, described (3) step PIn
aGa
1-aPDuring N layer 8c and (7) goes on foot
aGa
1-aThe flow of In is identical in the N layer 8h layer, wherein 0.1＜a≤0.5.
4. the growing method of the epitaxial structure of the high-power GaN base of raising according to claim 2 LED luminous efficiency is characterized in that, described (5) step PIn
bGa
1-bThe mole percent of In is higher than among the N layer 8e
(3) step PIn
aGa
1-aThe component of In, wherein 0.2＜b≤0.9,0.1＜a≤0.5 among the N layer 8c.
5. the growing method of the epitaxial structure of the high-power GaN base of raising according to claim 2 LED luminous efficiency is characterized in that, described (2) step PAl
xGa
1-xPAl during N layer 8b and (4) goes on foot
yGa
1-yThe component of Al is that ladder increases gradually in the N layer 8d growth course, wherein 0.1＜x≤0.3,0.3＜y≤0.8.
6. the growing method of the epitaxial structure of the high-power GaN base of raising according to claim 5 LED luminous efficiency is characterized in that, described (6) step PAl
yGa
1-yN layer 8f and (8) step PAl
xGa
1-xThe component of Al is that ladder reduces gradually in the N layer 8i growth course, and increase is identical with the amplitude that reduces, and the change of component of Al is ridge and distributes, wherein 0.3＜y≤0.8,0.1＜x≤0.3.
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| CN103872204A (en) * | 2014-03-12 | 2014-06-18 | 合肥彩虹蓝光科技有限公司 | P (Positive) type insert layer with cycle structure and growing method |
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| CN107195739A (en) * | 2017-06-30 | 2017-09-22 | 华灿光电(苏州）有限公司 | A kind of light emitting diode and its manufacture method |
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| CN109192829A (en) * | 2018-07-09 | 2019-01-11 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and its growing method |
| CN109192829B (en) * | 2018-07-09 | 2020-12-01 | 华灿光电（浙江）有限公司 | Gallium nitride-based light emitting diode epitaxial wafer and growth method thereof |
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