CN111048641B - Single-chip white light emitting diode and preparation method thereof - Google Patents

Single-chip white light emitting diode and preparation method thereof Download PDF

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CN111048641B
CN111048641B CN201911044450.XA CN201911044450A CN111048641B CN 111048641 B CN111048641 B CN 111048641B CN 201911044450 A CN201911044450 A CN 201911044450A CN 111048641 B CN111048641 B CN 111048641B
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CN111048641A (en
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李金钗
王传家
陈航洋
卢诗强
黄凯
康俊勇
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Xiamen University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction

Abstract

The invention discloses a single-chip white light emitting diode, which comprises: the GaN-based LED comprises a substrate, a buffer layer, a non-doped GaN layer, a patterned n-type GaN layer, a multi-quantum well active layer, an electron blocking layer, a p-type GaN layer, a red light wavelength conversion material, a current expansion layer and n-type and p-type ohmic contact electrodes. Etching the n-type GaN layer by a dry etching technology and a wet etching technology to form a hexagonal hole array with a semi-polar surface, a non-polar surface and a polar surface, epitaxially growing an InGaN multi-quantum well active layer, an electron blocking layer and a p-type GaN layer on the patterned n-type GaN layer, and emitting a broad spectrum from blue light to yellow green light wave band; filling a red light wavelength conversion material in the hexagonal hole, and exciting a red light spectrum by blue/green light emitted by the quantum well active region; thereby forming a full spectrum and obtaining a single-chip white light emitting diode with high color rendering index.

Description

Single-chip white light emitting diode and preparation method thereof
Technical Field
The invention belongs to the technical field of semiconductor optoelectronic devices, and relates to a gallium nitride-based fluorescent powder-free single-chip white light emitting diode.
Background
Light Emitting Diodes (LEDs), especially white LEDs, have played an increasingly important role in the fields of lighting, displays and the like. Currently, there are two main methods for implementing white LEDs: firstly, a blue light chip is adopted to excite yellow light fluorescent powder, or an ultraviolet light chip is adopted to excite red, green and blue light fluorescent powder to obtain a white light LED; the method has the advantages of mature technology, relative simple preparation and relatively low price, is a mainstream method applied in the semiconductor illumination industry at present, and has the defect that the service life, the stability and the color rendering index of the white light LED are reduced due to the aging problem of fluorescent powder and packaging materials. Secondly, white light is synthesized by combining a plurality of chips with three primary colors of red, green and blue (RGB); its advantages are high color-developing index, and easy control of light color by independently regulating the current of each chip. Therefore, researchers have proposed various methods for preparing single-chip white LEDs without phosphor powder in order to obtain white light sources with higher performance. For example, a photoluminescent layer (CN101556983, CN101562222) is grown inside the chip, quantum dots with different In components formed In the quantum well emit light with different wavelengths to mix into white light through a pre-stress layer (CN101685844, CN102097554), and a carbon nanotube is laid to randomly form InGaN quantum dots (CN102244167) In the quantum well active region, but these methods are not easy to realize precise control of the In components and have poor repeatability of the preparation process. In addition, chinese patent CN104868023 reports a group III nitride semiconductor/quantum dot hybrid white LED device, which employs nanoimprint technology to fabricate a nanopore array on a full-structure LED epitaxial wafer, the depth of the nanopore array penetrates through a quantum well active layer from the device surface, and then group II-VI quantum dots are filled in the nanopores, and the type and ratio of the filled quantum dots are changed to adjust the light emitting wavelength and intensity, thereby implementing a white LED device with ultra-high color rendering index. The preparation of the large-area and ordered nanopore array can be realized by adopting the nanoimprint technology, and the repeatability of the preparation process is high. However, during the preparation of the nano-pore, the etching technique will cause great damage to the quantum well active region, resulting in the decrease of the radiation luminous efficiency.
Disclosure of Invention
The invention aims to solve the main technical problem of providing a single-chip white light emitting diode and a preparation method thereof, and obtaining the single-chip white light emitting diode with high color rendering index.
In order to solve the technical problems, the technical scheme of the invention is as follows:
a single-chip white light LED comprises a substrate, a buffer layer, a non-doped GaN layer, a graphical n-type GaN layer, a multi-quantum well active layer, an electron blocking layer, a p-type GaN layer, a red light wavelength conversion material, a current expansion layer, an n-type ohmic contact electrode and a p-type ohmic contact electrode which are stacked from bottom to top;
the n-type GaN layer is subjected to graphical processing to form a hexagonal hole array with a semi-polar surface, a non-polar surface and a polar surface;
in is grown simultaneously on the nonpolar face, the semipolar face and the polar face of the patterned n-type gallium nitride layerxGa1-xAn N/GaN multiple quantum well active layer; the multiple quantum well active layers grown on the nonpolar surface and the semipolar surface of the n-type gallium nitride layer emit blue light to green light spectrum, and the multiple quantum well active layers grown on the polar surface of the n-type gallium nitride layer emit yellow-green light spectrum.
In a preferred embodiment: including but not limited to sapphire or single crystal silicon or silicon carbide or aluminum nitride.
In a preferred embodiment: the buffer layer is AlN or GaN, and the thickness of the buffer layer is 5nm-100 nm.
In a preferred embodiment: the thickness of the non-doped GaN is 0.2-10 μm.
In a preferred embodiment: the n-type GaN layer is doped with Si and has a thickness of 0.5-10 μm.
In a preferred embodiment: the depth of the hexagonal hole array is 0.2-2.5 μm, the diameter is 0.5-10 μm, and the distance is 0.5-50 μm.
In a preferred embodiment: in grown on the nonpolar face and the semipolar facexGa1-xThe N/GaN multi-quantum well active layer has 1-20 periods, the thicknesses of the well layer and the barrier layer are 1-5nm and 10-20nm respectively, and the value of x is 0.15-0.35;
in grown on the polar facexGa1-xThe N/GaN multiple quantum well active layer has 1-20 periods, the thicknesses of the well layer and the barrier layer are respectively 2-10nm and 10-20nm, and the value of x is 0.15-0.35.
In a preferred embodiment: the electron blocking layer is a p-type AlGaN layer or a p-type AlGaN/GaN superlattice layer, and the thickness of the electron blocking layer is 5nm-50 nm.
In a preferred embodiment: the p-type GaN layer is Mg-doped and has a thickness of 50nm-500 nm.
The invention also provides a preparation method of the single-chip white light LED, which comprises the following steps:
(1) sequentially growing a low-temperature buffer layer, a non-doped GaN layer and an n-type GaN layer on a substrate;
(2) performing patterning treatment on the n-type GaN layer to form a hexagonal hole array with a semi-polar surface, a non-polar surface and a polar surface;
(3) sequentially epitaxially growing a multi-quantum well active layer, an electron blocking layer and a p-type GaN layer on the patterned n-type GaN layer;
(4) filling red light wavelength conversion materials in the hexagonal holes on the basis of the step (3);
(5) forming a current spreading layer and a p-type metal electrode on the p-type GaN layer;
(6) and manufacturing an n-type metal electrode on the table top at one side of the n-type GaN layer.
From the above description of the present invention, it can be seen that the present invention has at least one or some of the following advantages compared with the prior art:
(1) the single-chip white light LED provided by the invention is obtained by combining a red light wavelength conversion material and an epitaxial full structure based on the growth of a nonpolar face, a semipolar face and a polar face. In the epitaxial full structure, multiple quantum well active layer (In) is simultaneously formed on nonpolar, semipolar and polar surfaces of the patterned n-type gallium nitride layerxGa1-xN/GaN, x ═ 0.15-0.35), since the growth rate of the epitaxial multiple quantum well active layer on the polar surface is high, the epitaxial multiple quantum well is thick, emitting yellow-green light spectrum; the growth rate of the multi-quantum well active layer extending on the nonpolar plane and the semipolar plane is lower than that of the polar plane, and the width of the extending multi-quantum well is narrowed, so that the light-emitting wavelength is blue-shifted, and blue light is emitted to a green light spectrum; thus, light of a broad spectrum can be obtained by adjusting the In composition In the quantum well and the thickness of the well. Meanwhile, the quantum well active region is etchedAnd the epitaxy is carried out after the etching process, so that the etching damage can be avoided, and the high luminous efficiency of the device is ensured.
(2) The holes are filled with red light wavelength conversion materials, the light-emitting wavelength and the light-emitting intensity can be adjusted, and the holes are combined with the epitaxial full structure to form a full spectrum, so that the ultrahigh color rendering performance is realized.
Drawings
Fig. 1 is a schematic diagram of a single chip white LED according to the present invention.
Fig. 2 is a cross-sectional view of a hole of a white LED and the basic principle of white light mixing according to the present invention.
Detailed Description
The invention is further described below by means of specific embodiments. The drawings are only schematic and can be easily understood, and the specific proportion can be adjusted according to design requirements. In the drawings, the relative relationship of elements in the drawings as described above should be understood by those skilled in the art to mean that the relative positions of the elements are correspondingly determined by the elements on the front and the back for easy understanding, and therefore, the elements may be turned over to present the same elements, and all should fall within the scope of the present disclosure.
The single-chip white light LED structure prepared by the invention is shown in figure 1 and mainly comprises a substrate 100, a buffer layer 101, a non-doped GaN layer 102, a patterned n-type semiconductor layer 103, a quantum well yellow-green light waveband 104, a quantum well blue light waveband 105, an electron blocking layer 106, a p-type semiconductor layer 107, a red light wavelength conversion material 108, a current expansion layer 109 and n-type and p-type ohmic contact electrodes 110. The preparation process comprises the following steps:
1. the substrate 100 is placed in a metal organic chemical vapor deposition reaction chamber and then heated to 1150 ℃, and surface contamination is removed under hydrogen atmosphere. Then epitaxially growing a low-temperature buffer layer 101, an undoped GaN layer 102 and a silicon-doped n-type GaN layer 103 in sequence. The growth temperature range of the low-temperature buffer layer is 500-600 ℃, the thickness is 5-100 nm, and 560 ℃ and 20nm are adopted in the embodiment respectively; the growth temperature ranges of the non-doped GaN layer and the silicon-doped n-type GaN layer are 1000-1170 ℃, 1150 ℃ is adopted in the embodiment, and the thicknesses of the non-doped GaN layer and the silicon-doped n-type GaN layer are 2 microns and 1 micron respectively.
2. The well grown n-type GaN layer 103 is subjected to patterning treatment, and the specific implementation method comprises the following steps:
1) a silicon dioxide layer as a mask layer with a thickness of 200nm was deposited on the n-type GaN layer 103.
2) In the SiO2Coating a tackifier on the epitaxial wafer of the mask, and carrying out glue homogenizing, wherein the parameter is that 6000 rotation is carried out for 30s after 1000 rotation is carried out for 10 s; photoresist AZ5214E was then applied with the same spin-on parameters as the adhesion promoter. And (3) drying the photoresist at 96 ℃ for 4min, and then carrying out photoetching on the photoresist, wherein the parameters are exposure for 12s-15s and development for 40s-60s, and the exposure for 12.5s and the development for 50s are adopted in the embodiment.
3) Etching SiO by ICP on the basis of the step (2)2Layer, gas CHF4Etching for 120s to remove SiO on the n-type GaN semiconductor layer2The layer is etched into a circular aperture array mask.
4) Etching the n-type GaN layer by ICP on the basis of the step (3), wherein the gas is Cl2，BCl2The etching time depends on the etching depth, and the epitaxial wafer with the circular hole array is obtained by adopting the embodiment with the etching time of 2min30s and the depth of about 1000 nm.
5) Soaking the epitaxial wafer in hydrofluoric acid solution for about 5min to remove SiO2Masking, and removing residual glue by using acetone solution or third solution.
6) And (3) putting the epitaxial wafer with the circular hole array into a 3mol/L potassium hydroxide solution, soaking for 5-10 min at 85 ℃, and performing wet etching, wherein the adopted time is 8min, so as to obtain a hexagonal hole array with a semi-polar surface, a non-polar surface and a polar surface, namely a patterned n-type GaN layer.
3. In is grown simultaneously on the nonpolar face, the semipolar face and the polar face of the patterned n-type GaN layerxGa1- xAn N/GaN multiple quantum well active layer. Said InxGa1-xThe N/GaN multi-quantum well active layer has 1-20 periods, the InGaN well layer in each period has a growth temperature of 680-730 ℃ and a thickness of 1-5 nm; the growth temperature of the GaN barrier layer is in the range of 830-870 ℃, the thickness is in the range of 10-20nm, and the x value is 0.15-0.35. This exampleThe growth temperature of the well layer and the barrier layer respectively adopts 770 ℃ and 900 ℃, the thickness respectively adopts 3nm and 15nm, and the value of x is 0.15-0.35. The multiple quantum well active layer 105 grown on the nonpolar plane, the semipolar plane (hole region) of the n-type GaN layer emits blue to green light spectrum, and the multiple quantum well active layer 104 grown on the polar plane (planar region) of the n-type gallium nitride layer emits yellow-green light spectrum.
4. And (3) growing an electron blocking layer 106 on the basis of the step (3), wherein the electron blocking layer can be a p-type doped AlGaN layer or a p-type doped AlGaN/GaN superlattice layer, the growth temperature range of the electron blocking layer is 1000-1100 ℃, the thickness of the electron blocking layer is 5-50 nm, and the electron blocking layer is formed by an AlGaN/GaN layer, 1050 ℃ and 15nm respectively.
5. And (4) growing a p-type GaN layer 107 on the basis of the step (4), wherein the p-type GaN layer is Mg-doped, the growth temperature range is 1000-1100 ℃, the thickness of the p-type GaN layer is 50-500 nm, and 1050 ℃ and 300nm are respectively adopted in the embodiment.
6. On the basis of the step 5, a red light wavelength conversion material is filled in the hole structure, the conversion material can be carbon quantum dots or cadmium selenide/zinc sulfide core-shell structure quantum dots or other red light wavelength conversion materials, the light emitting wavelength is 600nm to 700nm, and the cadmium selenide/zinc sulfide core-shell structure quantum dots are adopted in the embodiment.
7. And (3) forming a current expansion layer 109 and n-type and p-type ohmic contact electrodes 110 by using conventional LED chip preparation means such as deposition, photoetching, ICP (inductively coupled plasma) etching, laser scribing and the like on the basis of the step (6), so as to obtain the fluorescent powder-free single-chip white LED shown in the figure.
When the device works, the quantum well active layer which grows on the nonpolar surface, the semipolar surface and the polar surface simultaneously emits light with different wavelengths: the growth rate of the epitaxial multiple quantum well active layer on the polar surface is high, the epitaxial multiple quantum well is thick, and a yellow-green light spectrum is emitted; the growth rate of the multi-quantum well active layer extending on the nonpolar plane and the semipolar plane is lower than that of the polar plane, and the width of the extending multi-quantum well is narrowed, so that the light-emitting wavelength is blue-shifted, and blue light is emitted to a green light spectrum; thus, light of a broad spectrum can be obtained by adjusting the In composition In the quantum well and the thickness of the well.
The parameters of n-type semiconductor patterning are as follows: pore structures with the diameter of 5-10 μm and the spacing of 30-50 μm. It is worth mentioning that the ratio of green light to blue light can be adjusted by controlling the diameter of the hole structure and the distance between the hole structures, and the hole structure with the diameter of 5 μm and the hole structure with the distance of 50 μm are respectively adopted in the experiment.
After the p-type semiconductor layer is formed, the hole structure can be filled with quantum dots with red light wavelength. The blue light emitted by the quantum well layer grown on the nonpolar surface is used for exciting the quantum dots to emit red light, and the red light is mixed with the blue light emitted by the semipolar surface quantum well and the green light emitted by the polar surface quantum well to form white light, as shown in fig. 2.
The above description is only an embodiment of the present invention, but the design concept of the present invention is not limited thereto. Modifications and variations may be effected by one skilled in the art without departing from the spirit and scope of the invention. Insubstantial changes from this concept can be made without departing from the spirit of the invention.

Claims (10)

1. A single chip white light LED, characterized by: the LED structure comprises a substrate, a buffer layer, a non-doped GaN layer, a patterned n-type GaN layer, a multi-quantum well active layer, an electron blocking layer, a p-type GaN layer, a red light wavelength conversion material, a current expansion layer, and n-type and p-type ohmic contact electrodes which are stacked from bottom to top;
the n-type GaN layer is subjected to graphical processing to form a hexagonal hole array with a semi-polar surface, a non-polar surface and a polar surface;
in is grown simultaneously on the nonpolar face, the semipolar face and the polar face of the patterned n-type gallium nitride layerxGa1-xAn N/GaN multiple quantum well active layer; the multiple quantum well active layer grown on the nonpolar surface and the semipolar surface of the n-type gallium nitride layer emits blue light to green light spectrum, and the multiple quantum well active layer grown on the polar surface of the n-type gallium nitride layer emits yellow-green light spectrum; the hexagonal holes are filled with the red light wavelength conversion material.
2. The single chip white LED of claim 1, wherein: including but not limited to sapphire or single crystal silicon or silicon carbide or aluminum nitride.
3. The single chip white LED of claim 1, wherein: the buffer layer is AlN or GaN, and the thickness of the buffer layer is 5nm-100 nm.
4. The single chip white LED of claim 1, wherein: the thickness of the non-doped GaN layer is 0.2-10 μm.
5. The single chip white LED of claim 1, wherein: the n-type GaN layer is doped with Si and has a thickness of 0.5-10 μm.
6. The single chip white light LED of claim 5, wherein: the depth of the hexagonal hole array is 0.2-2.5 μm, the diameter is 0.5-10 μm, and the distance is 0.5-50 μm.
7. The single chip white LED of claim 1, wherein: in grown on the nonpolar face and the semipolar facexGa1-xThe N/GaN multi-quantum well active layer has 1-20 periods, the thicknesses of the well layer and the barrier layer are 1-5nm and 10-20nm respectively, and the value of x is 0.15-0.35;
in grown on the polar facexGa1-xThe N/GaN multiple quantum well active layer has 1-20 periods, the thicknesses of the well layer and the barrier layer are respectively 2-10nm and 10-20nm, and the value of x is 0.15-0.35.
8. The single chip white LED of claim 1, wherein: the electron blocking layer is a p-type AlGaN layer or a p-type AlGaN/GaN superlattice layer, and the thickness of the electron blocking layer is 5nm-50 nm.
9. The single chip white LED of claim 1, wherein: the p-type GaN layer is Mg-doped and has a thickness of 50nm-500 nm.
10. The method of making a single chip white LED of any one of claims 1-9, comprising the steps of:
(1) sequentially growing a low-temperature buffer layer, a non-doped GaN layer and an n-type GaN layer on a substrate;
(2) performing patterning treatment on the n-type GaN layer to form a hexagonal hole array with a semi-polar surface, a non-polar surface and a polar surface;
(3) sequentially epitaxially growing a multi-quantum well active layer, an electron blocking layer and a p-type GaN layer on the patterned n-type GaN layer;
(4) filling red light wavelength conversion materials in the hexagonal holes on the basis of the step (3);
(5) forming a current spreading layer and a p-type metal electrode on the p-type GaN layer;
(6) and manufacturing an n-type metal electrode on the table top at one side of the n-type GaN layer.
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