CN102185068A - Light emitting diode (LED) and preparation method thereof - Google Patents
Light emitting diode (LED) and preparation method thereof Download PDFInfo
- Publication number
- CN102185068A CN102185068A CN2011101171140A CN201110117114A CN102185068A CN 102185068 A CN102185068 A CN 102185068A CN 2011101171140 A CN2011101171140 A CN 2011101171140A CN 201110117114 A CN201110117114 A CN 201110117114A CN 102185068 A CN102185068 A CN 102185068A
- Authority
- CN
- China
- Prior art keywords
- layer
- conductive semiconductor
- semiconductor layer
- emitting diode
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The invention relates to a light emitting diode (LED) and a preparation method thereof. The LED comprises a first conductive semiconductor layer, an active layer covering the first conductive semiconductor layer and a second conductive semiconductor layer covering the active layer, wherein a plurality of high density bulges are formed at the side, which is adjacent to the active layer, of the first conductive semiconductor layer; and the first conductive semiconductor layer and the second conductive semiconductor layer have opposite doping types. The LED has larger light emitting area.
Description
Technical field
The present invention relates to a kind of light-emitting diode (Light Emitting Diode, LED) and preparation method thereof.
Background technology
Light-emitting diode is applied to various fields owing to have long, low power consumption and other advantages of life-span, and especially along with its illumination performance index day by day significantly improves, light-emitting diode is commonly used for light-emitting device at lighting field.Wherein, be the III-V compound semiconductor of representative with gallium nitride (GaN) because have that band gap is wide, luminous efficiency is high, characteristics such as electronics saturation drift velocity height, chemical property are stable, in the high-luminance light field of electronic devices huge application potential is arranged, caused people's extensive concern.
See also Fig. 1, Fig. 1 is a kind of cross-sectional view of light-emitting diode of prior art.Described light-emitting diode comprises substrate 11, resilient coating (buffer layer) 12, N type contact layer (N contact layer) 13, N type cover layer (N active layer) 14, active layer (light emitting layers) 15, P type cover layer (P active layer) 16, P type contact layer (P contact layer) 17, the positive electrode 18 that is connected with described P type contact layer 17 and the negative electrode 19 that is connected with described N type contact layer 13.Described light-emitting diode is that two heterogeneous (wherein heterostructure comprises for Double Heterogeneous, the DH) light-emitting diode of structure: N type cover layer 14, active layer 15 and P type cover layer 16.Described active layer 15 is the luminescent layer of described light-emitting diode.Described N type cover layer 14 is a N type doped gallium nitride layer, and described P type cover layer 16 is a P type doped gallium nitride layer.Similarly, U.S. Pat 5777350 has also been announced a kind of nitride semiconductor photogenerator.
Yet, because gallium nitride body monocrystalline is difficult to acquisition, so the growth of gallium nitride material is at present mainly passed through at sapphire (Sapphire, AL
2O
3) means of carrying out heteroepitaxy on the substrate obtain, topmost growth technology has metal oxide chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) and halide vapour phase epitaxy (HVPE) etc.Because Sapphire Substrate and epitaxial layer of gallium nitride exist very big lattice mismatch (lattice mismatch) and heat expansion mismatch, so can introduce a large amount of dislocation (dislocation) inevitably in epitaxial layer of gallium nitride.
The researcher that university (NCSU) is found in the North Carolina has proposed a kind of new growing method of gallium nitride recently, arrives shown in Figure 4 as Fig. 2.At first, on Sapphire Substrate 21, form resilient coating 22 and gallium nitride layer 23 successively, shown in have a large amount of dislocations 24 in the gallium nitride layer 23, as shown in Figure 2.Then, adopt the described gallium nitride layer 23 of mode etching of no mask inductive couple plasma reactive ion etching (matchless inductively coupled plasma-reactiveion etching), make described gallium nitride layer 23 form nano wire (nanowires) 25, as shown in Figure 3 at contiguous described Sapphire Substrate 21 places.Adopt growth technology (epitaxial overgrowth), to cover described nano wire 25, the gallium nitride layer that is formed by described gallium nitride layer 23 and extension gallium nitride layer 26 forms hole (void) 27 at contiguous described Sapphire Substrate 21 places at the long extension gallium nitride layer 26 of described gallium nitride layer 23 surface regeneration.Because the existence in described hole 27, the dislocation in the described gallium nitride layer is absorbed (dislocation trapping), thereby has reduced the dislocation density (dislocation density) of described gallium nitride layer, helps improving the luminous efficiency of light-emitting diode.
Summary of the invention
The object of the present invention is to provide a kind of light-emitting diode that can increase light-emitting area.
Another object of the present invention is to provide the preparation method of above-mentioned light-emitting diode.
A kind of light-emitting diode, comprise first conductive semiconductor layer, cover the active layer of described first conductive semiconductor layer, cover second conductive semiconductor layer of described active layer, the surface of one side of the contiguous described active layer of described first conductive semiconductor layer is formed with a plurality of projectioies, and described first conductive semiconductor layer has opposite doping type with described second conductive semiconductor layer.
The preferred a kind of technical scheme of above-mentioned light-emitting diode, described light-emitting diode also comprise substrate and are arranged at resilient coating between described first conductive semiconductor layer and the described substrate.
The preferred a kind of technical scheme of above-mentioned light-emitting diode, described light-emitting diode also comprises the contact layer that covers described second conductive semiconductor layer.
The preferred a kind of technical scheme of above-mentioned light-emitting diode, described first conductive semiconductor layer are N type doped gallium nitride layer or N type doped aluminum nitride gallium layer, and described second conductive semiconductor layer is P type doped gallium nitride layer or P type doped aluminum nitride gallium layer.
The preferred a kind of technical scheme of above-mentioned light-emitting diode, the angular range of the vertical direction of the side of described projection and described first conductive semiconductor layer are 0 to 45 degree.
The preferred a kind of technical scheme of above-mentioned light-emitting diode, described projection is a column-shaped projection.
The preferred a kind of technical scheme of above-mentioned light-emitting diode, described active layer are single quantum well structure or multi-layer quantum well structure.
The preferred a kind of technical scheme of above-mentioned light-emitting diode, described quantum well structure comprises the heterostructure of two or more different band gaps.
The preferred a kind of technical scheme of above-mentioned light-emitting diode, described active layer comprises the gallium indium nitride layer and the gallium nitride layer of stacked setting.
The preferred a kind of technical scheme of above-mentioned light-emitting diode, the thickness of the gallium indium nitride layer in the described active layer is 2 nanometers, the thickness of described gallium nitride layer is 10 nanometers.
The preferred a kind of technical scheme of above-mentioned light-emitting diode, the distance range between the described projection be 200 nanometers to 500 nanometers, the altitude range of described projection is that 200 nanometers are to 1000 nanometers.
A kind of preparation method of light-emitting diode comprises the steps: to provide a substrate, a side first conductive semiconductor layer on described substrate; Described first conductive semiconductor layer of etching makes the surface of described first conductive semiconductor layer form a plurality of projectioies; Form active layer, described active layer covers the surface that described first conductive semiconductor layer has a protruding side; In described active layer surface coverage second conductive semiconductor layer, described second conductive semiconductor layer has opposite doping type with described first conductive semiconductor layer.
The preferred a kind of technical scheme of said method, described first conductive semiconductor layer are N type doped gallium nitride layer or N type doped aluminum nitride gallium layer, and described second conductive semiconductor layer is P type doped gallium nitride layer or P type doped aluminum nitride gallium layer.
The preferred a kind of technical scheme of said method, form described first conductive semiconductor layer before, on described substrate, form resilient coating, described first conductive semiconductor layer covers described resilient coating.
The preferred a kind of technical scheme of said method after described active layer surface coverage second conductive semiconductor layer, forms contact layer on the surface of described second conductive semiconductor layer.
The preferred a kind of technical scheme of said method, the described contact layer of etching, second conductive semiconductor layer and active layer, the part surface of described first conductive semiconductor layer is exposed, form the negative pole of described light-emitting diode on the surface that described first conductive semiconductor layer exposes.
The preferred a kind of technical scheme of said method adopts described first conductive semiconductor layer of mode etching of no mask inductive couple plasma reactive ion etching.
The preferred a kind of technical scheme of said method, the angular range of the vertical direction of the side of described projection and described first conductive semiconductor layer are 0 to 45 degree.
The preferred a kind of technical scheme of said method, described projection is a column-shaped projection.
The preferred a kind of technical scheme of said method, described active layer are single quantum well structure or multi-layer quantum well structure.
The preferred a kind of technical scheme of said method, described quantum well structure comprises the heterostructure of two or more different band gaps.
The preferred a kind of technical scheme of said method, described active layer comprises the gallium indium nitride layer and the gallium nitride layer of stacked setting.
The preferred a kind of technical scheme of said method, the thickness of the gallium indium nitride layer in the described active layer is 2 nanometers, the thickness of described gallium nitride layer is 10 nanometers.
The preferred a kind of technical scheme of said method, the distance range between the described projection be 200 nanometers to 500 nanometers, the altitude range of described projection is that 200 nanometers are to 1000 nanometers.
The preferred a kind of technical scheme of said method, described first conductive semiconductor layer of etching forms in the step of projection, and etching gas is the mixture of boron chloride and chlorine, and chamber pressure is 10 to 30 millitorrs, backplane power is 200 to 400 watts, and coil power is 100 to 200 watts.
Compared with prior art, light-emitting diode of the present invention comprises first conductive semiconductor layer, active layer and second conductive semiconductor layer, one side of the contiguous active layer of first conductive semiconductor layer is formed with projection, described active layer covers described first conductive semiconductor layer, because the existence of described projection, increase the area of described active layer between described first, second conductive semiconductor layer, thereby increased the light-emitting area of light-emitting diode.
Description of drawings
Fig. 1 is a kind of cross-sectional view of light-emitting diode of prior art.
Fig. 2 is each step schematic diagram of a kind of growing method of gallium nitride of prior art to Fig. 4.
Fig. 5 is the cross-sectional view of a kind of embodiment of light-emitting diode of the present invention.
Fig. 6 is the preparation method's of a light-emitting diode of the present invention flow chart.
Fig. 7 is each step schematic diagram of the preparation method of light-emitting diode of the present invention to Figure 12.
Figure 13 is the cross-sectional view of the another kind of embodiment of light-emitting diode of the present invention.
Embodiment
Light-emitting diode of the present invention comprises first conductive semiconductor layer, active layer and second conductive semiconductor layer, one side of the contiguous active layer of first conductive semiconductor layer is formed with a plurality of projectioies, described active layer covers first conductive semiconductor layer, because the existence of described projection, increase the area of described active layer between described first, second conductive semiconductor layer, thereby increased the light-emitting area of light-emitting diode.For making the purpose, technical solutions and advantages of the present invention clearer, the present invention is described in further detail below in conjunction with accompanying drawing.
See also Fig. 5, Fig. 5 is the cross-sectional view of light-emitting diode of the present invention.Described light-emitting diode comprises substrate 31, resilient coating 32, first conductive semiconductor layer 33, active layer 36, second conductive semiconductor layer 37, contact layer 38, the positive electrode 39 of the described light-emitting diode that is connected with described contact layer 38.The part of described first conductive semiconductor layer 33 exposes, and the negative electrode 40 of described light-emitting diode is connected with the expose portion of described first conductive semiconductor layer 33.Described first conductive semiconductor layer 33 has opposite doping type with described second conductive semiconductor layer 37.One side surface of described first conductive semiconductor layer, 33 contiguous described active layers 36 is formed with a plurality of column-shaped projections 35, preferably, gap width scope between the described column-shaped projection 35 is 200 to 500 nanometers, and the altitude range of described column-shaped projection 35 is 200 to 1000 nanometers.
Concrete, the material of described substrate 31 can be sapphire, carborundum (SiC), silicon, zinc oxide (ZnO), GaAs (GaAs), spinelle (MgAL
2O
4), and lattice constant is near the monocrystalline nitride of nitride-based semiconductor.Preferably, described substrate is Sapphire Substrate or silicon substrate.
Described resilient coating 32 covers described substrate 31, is used to relax the lattice constant mismatch of described first conductive semiconductor 33 and described substrate 31.The thickness of described resilient coating 32 is generally hundreds of dusts, and material is generally gallium nitride or aluminium nitride (AlN), and is preferred, when described substrate 31 is Sapphire Substrate, and gallium nitride (LT GaN) layer that described resilient coating 32 is grown down for cryogenic conditions; When described substrate 31 was silicon substrate, described resilient coating 32 was an aln layer.Certainly, if the material of described substrate 31 be lattice constant very near the carborundum or the zinc oxide of nitride-based semiconductor, then can omit described resilient coating 32.
Light-emitting diode of the present invention is the light-emitting diode of double-heterostructure, the light-emitting diode of double-heterostructure has many good qualities than homostyructure or single heterojunction structure, can more effective carrier confinement, thus cause more effective charge carrier compound, make the luminous brighter of light-emitting diode.The double-heterostructure of light-emitting diode of the present invention comprises: described first conductive semiconductor layer 33, active layer 36, second conductive semiconductor layer 37.One side of described first conductive semiconductor layer, 33 contiguous described active layers 36 is formed with column-shaped projection 35, described active layer 36 covers the surface that described first conductive semiconductor layer 33 has column-shaped projection 35, therefore, described active layer 36 also forms projection in the position of the described column-shaped projection 35 of correspondence, promptly described active layer 36 and described column-shaped projection 35 autoregistrations (self align).Described column-shaped projection 35 can be the projection that is formed by the nano wire bar.
Described first conductive semiconductor layer 33 is n type nitride semiconductor layer, and is concrete, and described first conductive semiconductor layer 33 is the aluminium gallium nitride alloy (Al that N type doped gallium nitride layer or N type mix
yGa
1-yN, y represent the molfraction of aluminium, 0＜y＜1) layer.
Described second conductive semiconductor layer 37 is P type nitride semiconductor layer, and is concrete, and described second conductive semiconductor layer 37 is the aluminium gallium nitride alloy (Al that P type doped gallium nitride layer or P type mix
yGa
1-yN, y represent the molfraction of aluminium, 0＜y＜1) layer, preferred, P type alloy can be magnesium.
Described active layer 36 is single quantum well structure or multi-layer quantum well structure, and described quantum well structure comprises the heterostructure of two or more different band gaps.Concrete, described active layer 36 comprises the InGaN (In of stacked setting
xGa
1-xN, x represent the molfraction of indium, 0＜x＜1) layer and gallium nitride layer.Preferably, the thickness of gallium indium nitride layer is about 2 nanometers in the described active layer 36, and the thickness of gallium nitride layer is about 10 nanometers.Because described first conductive semiconductor layer 33 is opposite with the doping type of described second conductive semiconductor layer 37, first conductive semiconductor layer 33 that the N type mixes drives the conductive strips that make electronics (electron) drift to the lower gallium indium nitride layer of band gap by external voltage, and second conductive semiconductor layer 37 that the P type mixes drives the valency electricity band that makes hole (hole) drift to the lower gallium indium nitride layer of band gap by external voltage.Because the band gap of gallium nitride layer is greater than gallium indium nitride layer, therefore, utilize the energy bandgap difference between gallium nitride layer and the gallium indium nitride layer, electronics and hole accumulate in combination in the active layer 36 of described single or multiple lift quantum well structure, thereby make that described active layer 36 is luminous.Because there is column-shaped projection 35 on described first conductive semiconductor layer 33 surfaces, therefore, the area of described active layer 36 between described first, second conductive semiconductor layer 33,37 increases, thereby makes more charge carrier compound in described active layer 37, increased the light-emitting area of light-emitting diode.Preferably, the aluminium gallium nitride alloy layer that described first conductive semiconductor layer 33 is mixed for the N type, the aluminium gallium nitride alloy layer that described second conductive semiconductor layer 37 is mixed for the P type, because the band gap of aluminium gallium nitride alloy can prevent that greater than the band gap of gallium nitride and InGaN electronics and hole from drifting to the two end electrodes of light-emitting diode from quantum well.
Described contact layer 38 can be formed by P type nitride-based semiconductor.If the gallium nitride or the aluminium gallium nitride alloy that mix with the P type form, can obtain the contact layer of excellent in crystallinity, if particularly form P type contact layer, then can make described contact layer 38 reach good Ohmic contact with described positive electrode 39 with gallium nitride.The material of described positive electrode 39 and negative electrode 40 can be for containing the metal material of Ni and Au.
See also Fig. 6, Fig. 6 is the preparation method's of a light-emitting diode of the present invention flow chart.To Figure 12, describe the preparation method of light-emitting diode of the present invention below in conjunction with Fig. 7 in detail.
At first, provide a substrate 31, on described substrate 31, form the resilient coating 32 and first conductive semiconductor layer 33 successively.As shown in Figure 7.The material of described substrate 31 can be sapphire, carborundum, silicon, zinc oxide, GaAs, spinelle, and lattice constant is near the monocrystalline nitride of nitride-based semiconductor.The described resilient coating 32 and first conductive semiconductor layer 33 can adopt the preparation method of prior art to form, and form as the method that adopts the metallo-organic compound chemical vapour deposition (CVD).When described substrate 31 is Sapphire Substrate, the gallium nitride layer that described resilient coating 32 is grown down for cryogenic conditions; When described substrate 31 was silicon substrate, described resilient coating 32 was an aln layer.After described resilient coating 32 forms, adopt growth technology to form first conductive semiconductor layer 33 on the surface of described resilient coating 32.The material of described first conductive semiconductor layer 33 is n type nitride semiconductor layer, and is concrete, and described first conductive semiconductor layer 33 is N type doped gallium nitride layer or is aluminium gallium nitride alloy (Al
yGa
1-yN, y represent the molfraction of aluminium, 0＜y＜1) layer.
Then, described first conductive semiconductor layer 33 of etching, the surface of described first conductive semiconductor layer 33 forms a plurality of column-shaped projections 35, as shown in Figure 8.In etching process, etching gas is the mixture of boron chloride and chlorine, and chamber pressure is 10 to 30 millitorrs, and backplane power is 200 to 400 watts, and coil power is 100 to 200 watts.Gap width scope between the described column-shaped projection 35 is 200 to 500 nanometers, and the altitude range of described column-shaped projection 35 is 200 to 1000 nanometers.Concrete, the nanometer lines projection that described column-shaped projection 35 can form for the mode that adopts no mask inductive couple plasma reactive ion etching.
After described first conductive semiconductor layer 33 surfaces form column-shaped projection 35, at described first conductive semiconductor layer, 33 surface coverage active layers 36, as shown in Figure 9.Because the existence of described first conductive semiconductor layer, 33 surperficial column-shaped projections 35, described active layer 36 be the also corresponding projection that forms in described column-shaped projection 35 positions.Described active layer 36 can adopt the preparation method of prior art to form, as adopting the method for metallo-organic compound chemical vapour deposition (CVD).Described active layer 36 is single quantum well structure or multi-layer quantum well structure, and described quantum well structure comprises the heterostructure of two or more different band gaps.Concrete, described active layer 36 comprises the gallium indium nitride layer and the gallium nitride layer of stacked setting.Preferably, the thickness of gallium indium nitride layer is about 2 nanometers in the described active layer 36, and the thickness of gallium nitride layer is about 10 nanometers.
Afterwards, in surface coverage second conductive semiconductor layer 37 of described active layer 36, as shown in figure 10.Described second conductive semiconductor layer 37 has opposite doping type with described first conductive semiconductor layer 33.Described second conductive semiconductor layer 37 can adopt the preparation method of prior art to form, and forms as the method that adopts the metallo-organic compound chemical vapour deposition (CVD).The material of described second conductive semiconductor layer 37 is the aluminium gallium nitride alloy (Al that P type doped gallium nitride or P type mix
yGa
1-yN, y represent the molfraction of aluminium, 0＜y＜1), preferred, P type alloy can be magnesium.
At the surface coverage contact layer 38 of described second conductive semiconductor layer 37, and form the positive electrode 39 of light-emitting diode on the surface of contact layer 38, as shown in figure 11.Described contact layer 38 can adopt the preparation method of prior art to form, and forms as the method that adopts the metallo-organic compound chemical vapour deposition (CVD).The material of described contact layer 38 can be gallium nitride or aluminium gallium nitride alloy.The material of described positive electrode 39 can be for containing the metal material of Ni and Au.
Then, the described contact layer 38 of etching, second conductive semiconductor layer 37, active layer 36, the part surface of described first conductive semiconductor layer 33 is exposed, form the negative electrode 40 of described light-emitting diode on the surface that described first conductive semiconductor layer 33 exposes, as shown in figure 12.The described contact layer 38 of etching, second conductive semiconductor layer 37, active layer 36 can adopt the lithographic method of prior art.The material of described negative electrode 40 can be for containing the metal material of Ni and Au.
Compare with the method for prior art, light-emitting diode of the present invention comprises first conductive semiconductor layer 33, active layer 36 and second conductive semiconductor layer 37, one side of first conductive semiconductor layer, 33 contiguous active layers 36 is formed with column-shaped projection 35, described active layer 36 covers first conductive semiconductor layer 33, because the existence of described column-shaped projection 35, increase the area of described active layer 36 between described first, second conductive semiconductor layer 33,37, thereby increased the light-emitting area of light-emitting diode.Preparation method's technology of light-emitting diode of the present invention is simple, and preparation cost is low.
The surface of first conductive semiconductor layer 33 of light-emitting diode of the present invention is formed with column-shaped projection 35, but because there is error in preparation technology, the side of described column-shaped projection 35 is not strict vertical with the surface of described first conductive semiconductor layer 33, the angular range of the vertical direction of the side of described column-shaped projection 35 and described first conductive semiconductor layer 33 can be 0 to 45 degree, as described in Figure 13.First conductive semiconductor layer, 33 surfaces of light-emitting diode of the present invention are formed with column-shaped projection 35, but column-shaped projection only is a kind of preferred implementation of the present invention, and described projection can also be the projection of other shapes, and it is described to be not limited to above-mentioned execution mode.
Under situation without departing from the spirit and scope of the present invention, can also constitute many very embodiment of big difference that have.Should be appreciated that except as defined by the appended claims, the present invention is not limited at the specific embodiment described in the specification.
Claims (25)
1. light-emitting diode, it is characterized in that, comprise first conductive semiconductor layer, cover the active layer of described first conductive semiconductor layer, cover second conductive semiconductor layer of described active layer, one side surface of the contiguous described active layer of described first conductive semiconductor layer is formed with a plurality of projectioies, and described first conductive semiconductor layer has opposite doping type with described second conductive semiconductor layer.
2. light-emitting diode as claimed in claim 1 is characterized in that, described light-emitting diode also comprises substrate and is arranged at resilient coating between described first conductive semiconductor layer and the described substrate.
3. light-emitting diode as claimed in claim 1 is characterized in that, described light-emitting diode also comprises the contact layer that covers described second conductive semiconductor layer.
4. light-emitting diode as claimed in claim 1, it is characterized in that, described first conductive semiconductor layer is N type doped gallium nitride layer or N type doped aluminum nitride gallium layer, and described second conductive semiconductor layer is P type doped gallium nitride layer or P type doped aluminum nitride gallium layer.
5. as any described light-emitting diode in the claim 1 to 4, it is characterized in that the angular range of the vertical direction of the side of described projection and described first conductive semiconductor layer is 0 to 45 degree.
6. as any described light-emitting diode in the claim 1 to 4, it is characterized in that described projection is a column-shaped projection.
7. as any described light-emitting diode in the claim 1 to 4, it is characterized in that described active layer is single quantum well structure or multi-layer quantum well structure.
8. light-emitting diode as claimed in claim 7 is characterized in that described quantum well structure comprises the heterostructure of two or more different band gaps.
9. as any described light-emitting diode in the claim 1 to 4, it is characterized in that described active layer comprises the gallium indium nitride layer and the gallium nitride layer of stacked setting.
10. light-emitting diode as claimed in claim 9 is characterized in that, the thickness of the gallium indium nitride layer in the described active layer is 2 nanometers, and the thickness of described gallium nitride layer is 10 nanometers.
11. as any described light-emitting diode in the claim 1 to 4, it is characterized in that, the distance range between the described projection be 200 nanometers to 500 nanometers, the altitude range of described projection is that 200 nanometers are to 1000 nanometers.
12. the preparation method of a light-emitting diode is characterized in that, comprises the steps:
One substrate is provided, forms first conductive semiconductor layer in described substrate one side;
Described first conductive semiconductor layer of etching makes the surface of described first conductive semiconductor layer form a plurality of projectioies;
Form active layer, described active layer covers the surface that described first conductive semiconductor layer has a protruding side;
In described active layer surface coverage second conductive semiconductor layer, described second conductive semiconductor layer has opposite doping type with described first conductive semiconductor layer.
13. the preparation method of light-emitting diode as claimed in claim 12, it is characterized in that, described first conductive semiconductor layer is N type doped gallium nitride layer or N type doped aluminum nitride gallium layer, and described second conductive semiconductor layer is P type doped gallium nitride layer or P type doped aluminum nitride gallium layer.
14. the preparation method of light-emitting diode as claimed in claim 12 is characterized in that, form described first conductive semiconductor layer before, on described substrate, form resilient coating, described first conductive semiconductor layer covers described resilient coating.
15. the preparation method of light-emitting diode as claimed in claim 12 is characterized in that, after described active layer surface coverage second conductive semiconductor layer, forms contact layer on the surface of described second conductive semiconductor layer.
16. the preparation method of light-emitting diode as claimed in claim 15, it is characterized in that, the described contact layer of etching, second conductive semiconductor layer and active layer, the part surface of described first conductive semiconductor layer is exposed, form the negative electrode of described light-emitting diode on the surface that described first conductive semiconductor layer exposes.
17. the preparation method of light-emitting diode as claimed in claim 12 is characterized in that, adopts described first conductive semiconductor layer of mode etching of no mask inductive couple plasma reactive ion etching.
18. the preparation method as any described light-emitting diode in the claim 12 to 17 is characterized in that, the angular range of the vertical direction of the side of described projection and described first conductive semiconductor layer is 0 to 45 degree.
19. the preparation method as any described light-emitting diode in the claim 12 to 17 is characterized in that, described projection is a column-shaped projection.
20. the preparation method as any described light-emitting diode in the claim 12 to 17 is characterized in that, described active layer is single quantum well structure or multi-layer quantum well structure.
21. the preparation method of light-emitting diode as claimed in claim 20 is characterized in that, described quantum well structure comprises the heterostructure of two or more different band gaps.
22. the preparation method as any described light-emitting diode in the claim 12 to 17 is characterized in that, described active layer comprises the gallium indium nitride layer and the gallium nitride layer of stacked setting.
23. the preparation method of light-emitting diode as claimed in claim 22, the thickness of the gallium indium nitride layer in the described active layer is 2 nanometers, and the thickness of described gallium nitride layer is 10 nanometers.
24. the preparation method as any described light-emitting diode in the claim 12 to 17 is characterized in that, the distance range between the described projection be 200 nanometers to 500 nanometers, the altitude range of described projection is that 200 nanometers are to 1000 nanometers.
25. preparation method as any described light-emitting diode in the claim 12 to 17, described first conductive semiconductor layer of etching forms in the step of projection, etching gas is the mixture of boron chloride and chlorine, chamber pressure is 10 to 30 millitorrs, backplane power is 200 to 400 watts, and coil power is 100 to 200 watts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101171140A CN102185068A (en) | 2011-05-06 | 2011-05-06 | Light emitting diode (LED) and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101171140A CN102185068A (en) | 2011-05-06 | 2011-05-06 | Light emitting diode (LED) and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102185068A true CN102185068A (en) | 2011-09-14 |
Family
ID=44571202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101171140A Pending CN102185068A (en) | 2011-05-06 | 2011-05-06 | Light emitting diode (LED) and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102185068A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367554A (en) * | 2012-03-28 | 2013-10-23 | 清华大学 | Light emitting diode manufacture method |
| CN103367561A (en) * | 2012-03-30 | 2013-10-23 | 清华大学 | Light emitting diode manufacture method |
| CN103367584A (en) * | 2012-03-30 | 2013-10-23 | 清华大学 | Light emitting diode and optical element |
| CN103137797B (en) * | 2011-12-03 | 2015-09-30 | 清华大学 | The preparation method of light-emitting diode |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1851948A (en) * | 2006-05-29 | 2006-10-25 | 金芃 | Through-hole ventical structure semiconductor chip and device |
| US20070041214A1 (en) * | 2005-05-24 | 2007-02-22 | Ha Jun S | Rod type light emitting device and method for fabricating the same |
| CN101183701A (en) * | 2007-12-10 | 2008-05-21 | 华中科技大学 | LED chip and method for preparing the same |
| CN101937953A (en) * | 2010-09-29 | 2011-01-05 | 苏州纳晶光电有限公司 | GaN-based light emitting diode and preparation method thereof |
-
2011
- 2011-05-06 CN CN2011101171140A patent/CN102185068A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070041214A1 (en) * | 2005-05-24 | 2007-02-22 | Ha Jun S | Rod type light emitting device and method for fabricating the same |
| CN1851948A (en) * | 2006-05-29 | 2006-10-25 | 金芃 | Through-hole ventical structure semiconductor chip and device |
| CN101183701A (en) * | 2007-12-10 | 2008-05-21 | 华中科技大学 | LED chip and method for preparing the same |
| CN101937953A (en) * | 2010-09-29 | 2011-01-05 | 苏州纳晶光电有限公司 | GaN-based light emitting diode and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| P.FRAJTAG ETAL: "Embedded voids approach for low defect density in epitaxial GaN films", 《APPLIED PHYSICS LETTERS》 * |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103137797B (en) * | 2011-12-03 | 2015-09-30 | 清华大学 | The preparation method of light-emitting diode |
| CN103367554A (en) * | 2012-03-28 | 2013-10-23 | 清华大学 | Light emitting diode manufacture method |
| CN103367554B (en) * | 2012-03-28 | 2016-03-30 | 清华大学 | The preparation method of light-emitting diode |
| CN103367561A (en) * | 2012-03-30 | 2013-10-23 | 清华大学 | Light emitting diode manufacture method |
| CN103367584A (en) * | 2012-03-30 | 2013-10-23 | 清华大学 | Light emitting diode and optical element |
| US9263628B2 (en) | 2012-03-30 | 2016-02-16 | Tsinghua University | Method for making light emitting diodes |
| CN103367561B (en) * | 2012-03-30 | 2016-08-17 | 清华大学 | The preparation method of light emitting diode |
| CN103367584B (en) * | 2012-03-30 | 2017-04-05 | 清华大学 | Light emitting diode and optical element |
| US9645372B2 (en) | 2012-03-30 | 2017-05-09 | Tsinghua University | Light emitting diodes and optical elements |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101036237B (en) | Textured light emitting diodes | |
| RU2523747C2 (en) | Boron-containing iii-nitride light-emitting device | |
| WO2008069482A1 (en) | Manufacturing method of light emitting diode including current spreading layer | |
| CN102185067A (en) | Light emitting diode (LED) and preparation method thereof | |
| US8445890B2 (en) | Solid state lighting devices grown on semi-polar facets and associated methods of manufacturing | |
| CN106057990B (en) | A kind of production method of the epitaxial wafer of GaN base light emitting | |
| KR101650720B1 (en) | Nanorod-based semiconductor light emitting device and method of manufacturing the same | |
| CN104993028B (en) | A kind of LED epitaxial slice | |
| JP2009302314A (en) | GaN-BASED SEMICONDUCTOR DEVICE | |
| CN101635328A (en) | Vertical iii-nitride light emitting diodes on patterned substrates with embedded bottom electrodes | |
| US20120086017A1 (en) | Heterogeneous substrate, nitride-based semiconductor device using same, and manufacturing method thereof | |
| CN105304779A (en) | GaN-based LED structure and formation method thereof | |
| KR20070068061A (en) | Light emitting diode and fabricating method thereof | |
| CN102244169A (en) | Light-emitting diode and manufacturing method thereof | |
| CN102222745A (en) | LED (Light Emitting Diode) and manufacturing method thereof | |
| CN102185068A (en) | Light emitting diode (LED) and preparation method thereof | |
| JP7447151B2 (en) | Light emitting diode precursor including passivation layer | |
| KR100820836B1 (en) | Method for manufacturing light emitting diode | |
| CN105470355A (en) | GaN-based LED structure and forming method thereof | |
| JP5314257B2 (en) | Low-defect semiconductor substrate, semiconductor light emitting device, and manufacturing method thereof | |
| CN102185070A (en) | Light emitting diode and preparation method thereof | |
| KR102249624B1 (en) | Light emitting structure and Light emitting device having the same | |
| KR101337615B1 (en) | GaN-BASED COMPOUND SEMICONDUCTOR AND THE FABRICATION METHOD THEREOF | |
| KR102299362B1 (en) | Green light emitting device including quaternary quantum well on a vicinal c-plane | |
| US20110175113A1 (en) | Semiconductor light emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110914 |