CN102315341B - Luminous device with superlattice structure active layer - Google Patents
Luminous device with superlattice structure active layer Download PDFInfo
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- CN102315341B CN102315341B CN201010219112.8A CN201010219112A CN102315341B CN 102315341 B CN102315341 B CN 102315341B CN 201010219112 A CN201010219112 A CN 201010219112A CN 102315341 B CN102315341 B CN 102315341B
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Abstract
The invention provides a luminous device with a superlattice structure active layer, which comprises a substrate and a multilayer III-V group nitride semiconductor structure, wherein the semiconductor structure is formed on the substrate and comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially formed on the substrate, the active layer comprises a superlattice quantum well layer, and the superlattice quantum well layer comprises a potential barrier layer and a superlattice potential well layer. Through the superlattice structure, the crystal defect density of the active layer and the piezoelectric polarization effect generated caused by the lattice dismatching of the active layer can be reduced, the crystal quality and the luminous efficiency of the active layer are improved, and the stability and the reliability of the luminous device are also improved.
Description
Technical field
The invention belongs to solid semiconductor lighting technical field, relate in particular to a kind of luminescent device with superlattice structure active layer.
Background technology
Light emitting semiconductor device includes light-emitting diode, laser tube etc.Now, light-emitting diode has become the product ahead of energy-saving illumination, is subject to worldwide extensive concern.The research and development of process researcher's arduous brilliance, the luminous efficiency of present light-emitting diode is greatly improved.With reference to Fig. 1, at present the primary structure of light-emitting diode comprises a Sapphire Substrate 1, is formed at gallium nitride (GaN) resilient coating 2 in this Sapphire Substrate 1, is formed at n type gallium nitride semiconductor layer 3 on this gallium nitride resilient coating 2, is formed at the active layer 4 on this n type gallium nitride semiconductor layer 3 and is formed at the P type gallium nitride semiconductor layers 5 on this active layer 4, wherein, this active layer 4 is by gallium nitride/InGaN (GaN/In
0.08ga
0.92n) quantum well layer forms, and this quantum well layer has lower barrierlayer (GaN layer) 41, potential well layer (In
0.08ga
0.92n layer) 42 and upper barrier layer (GaN layer) 43.Although this light emitting diode construction has adopted resilient coating and quantum well structure, improved within the specific limits the luminous efficiency of light-emitting diode, but, the lower barrierlayer of the quantum well structure of this structure (GaN layer) 41, upper barrier layer (GaN layer) 43 and potential well layer (In
0.08ga
0.92n layer) 42 Lattice Matching degree is bad, also has more crystal defect, and the luminous efficiency that has limited light-emitting diode further improves.Therefore, there is a kind of novel light-emitting diode structure in urgent hope at present, solves this restriction, improves the luminous efficiency of light-emitting diode, improves the stability of light-emitting diode.
Summary of the invention
The present invention, for solving the not high technical problem of luminous efficiency of luminescent device in prior art, provides a kind of luminescent device with superlattice structure active layer.
The embodiment of the present invention is achieved in that
A kind of luminescent device with superlattice structure active layer, comprise matrix and be formed at the multilayer III-V group-III nitride semiconductor structure on described matrix, described semiconductor structure comprises the first semiconductor layer, active layer and the second semiconductor layer being formed at successively on described matrix, wherein, described active layer comprises superlattice quantum well layer, and described superlattice quantum well layer comprises barrier layer and superlattice potential well layer.
The beneficial effect of technical solution of the present invention is: superlattice structure can reduce the defect concentrations in crystals of active layer and the piezoelectric polarization effect that active layer produces because lattice does not mate, improve crystal mass and the luminous efficiency of active layer, improve stability and the reliability of described luminescent device.
Accompanying drawing explanation
Fig. 1 is prior art light emitting diode construction schematic diagram;
Fig. 2 is the structural representation of the luminescent device of the embodiment of the present invention one;
Fig. 3 is the structural representation of the luminescent device of the embodiment of the present invention two;
Fig. 4 is the structural representation of the luminescent device of the embodiment of the present invention three;
Fig. 5 is the structural representation of the luminescent device of the embodiment of the present invention four.
Embodiment
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
Said III-the V of the present invention group nitride material comprises the materials such as gallium nitride (GaN), InGaN (InGaN), aluminium gallium nitride alloy (AlGaN) and indium nitride gallium aluminium (AlGaInN).It is 0.7～6.2eV that this III-V group nitride material has continuously adjustable direct bandwidth, has covered ultraviolet to infrared spectral region widely, is the ideal material of manufacturing blue light and white light emitting device.The present invention be take gallium nitride-based material and is described as example.
Luminescent device provided by the invention is the luminescent device that active layer has superlattice structure, has particularly superlattice quantum well layer, and described superlattice quantum well layer comprises barrier layer and superlattice potential well layer.This superlattice quantum well layer can be superlattice single quantum well layer, can be also superlattice multiple quantum well layer.This superlattice multiple quantum well layer is equivalent to a plurality of superlattice single quantum wells stack structure layer by layer, comprises alternately laminated barrier layer and superlattice potential well layer.The indium content cycle of this superlattice potential well layer changes, and can increase the width of quantum well, is conducive to prepare high-power light emitting device.Simultaneously, this superlattice quantum well layer can have good crystal mass, effectively reduce the defect concentrations in crystals of active layer, improve the crystal mass of active layer, reduce active layer because material lattice is not mated the piezoelectric polarization effect producing, improve the luminous efficiency of this luminescent device, improve stability and the reliability of this luminescent device.
Below by specific embodiment, describe technical scheme of the present invention and beneficial effect in detail.
Embodiment mono-
Fig. 2 is the structural representation of the luminescent device of the embodiment of the present invention one.
With reference to Fig. 2, the luminescent device of the embodiment of the present invention one is proposed, the luminescent device of the present embodiment is superlattice single quantum well luminescent device.This luminescent device comprises sapphire substrates 100, (material of resilient coating 200 is gallium nitride semiconductor layers to be formed at resilient coating 200 on this sapphire substrates 100, also claim gallium nitride resilient coating 200), be formed at the first semiconductor layer 300 (also claiming n type gallium nitride semiconductor layer 300) on this resilient coating 200, be formed at the first superlattice semiconductor layer 600 on this first semiconductor layer 300, be formed at the active layer 400 (also claiming superlattice quantum well layer 400) on the first superlattice semiconductor layer 600 and be formed at the second semiconductor layer 500 (also claiming P type gallium nitride semiconductor layers 500) on active layer 400, wherein, this active layer 400 comprises the first barrier layer 410, be formed at the superlattice potential well layer 420 on this first barrier layer 410 and be formed at the second barrier layer 430 on this superlattice potential well layer 420.
Also can omit in certain embodiments the second barrier layer 430, the P type gallium nitride semiconductor layers 500 of directly take is barrier layer.
The first implementation of this superlattice potential well layer 420 is:
This superlattice potential well layer 420 is arranged and is formed by the different nitride multilayer indium gallium semiconductor lamella of indium content.Concrete this superlattice potential well layer 420 is formed by the different two-layer InGaN semiconductor lamella of indium content (the first InGaN semiconductor lamella and the second InGaN semiconductor lamella) periodic arrangement.Periodic arrangement refers to alternately laminated arrangement of cycle, for example, by the first InGaN semiconductor lamella, the second InGaN semiconductor lamella, the first InGaN semiconductor lamella, the second InGaN semiconductor lamella, arrange like this.The thickness of every layer of InGaN semiconductor lamella is several atom thick, is generally less than 2nm.The cycle of this periodic arrangement is generally below 10, preferably 2 to 6 cycles.Preferably this first InGaN semiconductor lamella is this superlattice potential well layer 420 and the first barrier layer 410 touching positions, to improve the crystal mass of this superlattice potential well layer 420.Preferably the indium content range of this first InGaN semiconductor lamella be 2at% to 3at%, the indium content range of the second InGaN semiconductor lamella is that 10at% is to 30at%.
The second implementation of this superlattice potential well layer 420 is:
This superlattice potential well layer 420 is arranged and is formed by the different nitride multilayer indium gallium semiconductor lamella of indium content.(from the first barrier layer 410 up) this indium content successively decreases concrete this superlattice potential well layer 420 preferably from top to bottom, and the scope of this indium content is 1at%～30at%.This realization can also increase the emission spectrum wave-length coverage of luminescent device.Certainly, preferably, according to the changes of contents of the phosphide element of superlattice in each cycle can be adjusted with variation tendency, be conducive to improve the luminous efficiency of this luminescent device.
The third implementation of this superlattice potential well layer is:
This superlattice potential well layer 420 is arranged and is formed by the different nitride multilayer indium gallium semiconductor lamella of indium content.Concrete this nitride multilayer indium gallium semiconductor lamella can be divided into again the different semiconductor units of some indium content.This semiconductor unit is formed by the different two-layer InGaN semiconductor lamella periodic arrangement of indium content.This superlattice potential well layer 420 comprises the nitride multilayer indium gallium semiconductor lamella being comprised of the different semiconductor unit of indium content.The different semiconductor unit of indium content refers to different in the indium content that at least has in each semiconductor unit in an InGaN semiconductor lamella and other semiconductor units.The quantity of general this semiconductor unit is 2 to 10, preferably 3 to 5.Need to further be pointed out that: this semiconductor unit also can be formed by indium content different three layers or more InGaN semiconductor lamella periodic arrangement.
The average indium content of this semiconductor unit relation that can taper off from bottom to up, also can be the Changing Pattern of first increases and then decreases.The average indium content range of this superlattice potential well layer 420 is 1at%～30at%.Certainly, preferably, according to the changes of contents of the phosphide element of superlattice in each cycle can be adjusted with variation tendency, be conducive to improve the luminous efficiency of this luminescent device.
The 4th kind of implementation of this superlattice potential well layer is:
Two kinds in above-mentioned three kinds of implementations or three kinds of combination in any are formed.
In the superlattice potential well layer of the present embodiment, indium content is not uniformly, changes, and can regulate the band structure of active layer 400, improves the combined efficiency of active layer 400.
The present embodiment gallium nitride semiconductor layers that preferably this resilient coating 200 is non-doping, its thickness is 2 microns.The gallium nitride semiconductor layers that described the first semiconductor layer 300 is doped silicon, its thickness is 1 micron.The thickness of described the first superlattice semiconductor layer 600 is 50 to 100nm, and preferred thickness is 60nm.Described the first barrier layer 410 and the second barrier layer 430 are the gallium nitride semiconductor layers of mixing indium, and wherein indium content is 1at%, and its thickness is 5～20nm, and preferably its thickness is 10-20nm.Described superlattice potential well layer 420 is also for mixing the gallium nitride semiconductor layers of indium, and its thickness is 3-10nm.Preferably with the first implementation, realize the superlattice potential well layer 420 of the present embodiment, this superlattice potential well layer 420 is formed by the different two-layer InGaN semiconductor lamella periodic arrangement of indium content, the first InGaN semiconductor lamella is Ga0.98In0.02N, and the second InGaN semiconductor lamella is Ga0.8In0.2N.Described the second semiconductor layer 500 is magnesium-doped gallium nitride semiconductor layers, and its thickness is 0.4 micron.
Adopt InGaN as the material of the barrier layer of active layer 400, adopt InGaN as the material of the superlattice potential well layer of active layer 400 simultaneously, be conducive to reduce active layer 400 defect concentrations in crystals quantity, reduce piezoelectric polarization effect.
In the present embodiment, adopt gallium nitride resilient coating 200 to be formed between sapphire substrates 100 and n type gallium nitride semiconductor 300, played the unmatched effect of lattice between alleviation sapphire substrates 100 and gallium nitride-based semiconductor structure (gallium nitride-based semiconductor structure comprises n type gallium nitride semiconductor layer 300, superlattice quantum well layer 400 and P type gallium nitride semiconductor layers 500), in the situation that the lattice constant of the lattice constant of luminescent device matrix and gallium nitride-based semiconductor structure matches, can omit this gallium nitride resilient coating 200.This sapphire substrates 100 can certainly be substituted by other basis material, such as silicon carbide substrate, silicon substrate etc.
The effect of first superlattice semiconductor layer 600 of this example is in order further to improve the crystal mass of active layer 400.The first superlattice semiconductor layer 600 is comprised of alternately laminated silicon-doped gallium nitride thin layer (n type gallium nitride thin layer) and InGaN (Ga0.99In0.01N) thin layer of periodicity.Preferably this InGaN (Ga0.99In0.01N) thin layer contacts with the first barrier layer 410, is conducive to improve the crystal mass of barrier layer 410, and then improves the crystal mass of active layer.Bright dipping is required, be not in Tai Gao and cost-effective situation, this first superlattice semiconductor layer 600 also can be removed.Superlattice structure is that the rete of some very thin thickness is stacked, and therefore on the first superlattice semiconductor layer 600, the super quantum well of InGaN of growth can have good lattice quality, therefore can further improve luminous efficiency.
In the present embodiment, mix indium superlattice potential well layer, in conjunction with mixing indium barrier layer, can effectively reduce the crystal defect causing because of lattice mismatch, reduce the piezoelectric polarization effect causing because of lattice deformability.Meanwhile, can, according to the changes of contents of the phosphide element of superlattice in each cycle can be adjusted with variation tendency, be conducive to improve the luminous efficiency of luminescent device.
Embodiment bis-
Fig. 3 is the luminescent device structural representation of the embodiment of the present invention two.
With reference to Fig. 3, the luminescent device of embodiments of the invention two is proposed.The luminescent device of the present embodiment is to put forward on the basis of the luminescent device of embodiment mono-, this luminescent device comprises sapphire substrates 100, be formed at the resilient coating 200 on this sapphire substrates 100, be formed at the first semiconductor layer 300 on this resilient coating 200, be formed at the first superlattice semiconductor layer 600 on this first semiconductor layer 300, be formed at the active layer 400 on the first superlattice semiconductor layer 600 and be formed at the second semiconductor layer 500 on active layer 400, wherein, this active layer 400 comprises the first barrier layer 410, be formed at the superlattice potential well layer 420 on this first barrier layer 410 and be formed at the second barrier layer 430 on this superlattice potential well layer 420, further between the second barrier layer 430 and the second semiconductor layer 500, also comprise the second superlattice semiconductor layer 700.This second superlattice semiconductor layer 700 comprises alternately laminated magnesium doping gallium nitride semiconductor lamella (P type gallium nitride semiconductor thin layer) and aluminium gallium nitride alloy semiconductor lamella.This second superlattice semiconductor layer 700 can further improve the lattice quality of the second semiconductor layer 500, and for active layer 400 provides higher barrier region, is conducive to improve luminous efficiency.
In order to improve the current spread ability of luminescent device, the present embodiment is preferably further provided with transparency conducting layer 800 on the second semiconductor layer 500.These transparency conducting layer 800 good ITO of preferred light transmission (tin indium oxide) films.
Embodiment tri-
Fig. 4 is the structural representation of the luminescent device of the embodiment of the present invention three.
The present embodiment is to propose on the basis of embodiment bis-, is superlattice quantum well layer with the difference of the luminescent device of embodiment bis-.The superlattice quantum well layer of the present embodiment is superlattice multiple quantum well layer.So-called superlattice multiple quantum well layer has a plurality of superlattice potential well layers for this superlattice quantum well layer.This superlattice multiple quantum well layer 400 comprises alternately laminated barrier layer and superlattice potential well layer, and this superlattice multiple quantum well layer 400 comprises a plurality of barrier layers and a plurality of superlattice potential well layer.The present embodiment barrier layer that preferably barrier layer of this superlattice multiple quantum well layer 400 connects the second superlattice semiconductor layer 700, this superlattice multiple quantum well layer 400 connects the first superlattice semiconductor layer 600, to improve the crystal mass of this luminescent device integral body, improve luminous efficiency.Now take a barrier layer and a stacked superlattice quantum well layer is thereon one-period 470, and this superlattice multiple quantum well layer 400 comprises several such cycles 470, generally has 3 to 8 cycles.In each cycle 470, superlattice potential well layer can be different each other, also can be the same.In each cycle 470, superlattice potential well layer can select any number of mode in above-mentioned four kinds of implementations to realize.
Further, preferably in each cycle 470, in superlattice potential well layer, each semiconductor lamella indium changes of contents has certain limit (1at%-30at%), can adjust the halfwidth of radiation light-wave, is conducive to after excitated fluorescent powder, adjusts the color rendering of LED radiant light.The preferred indium content of the present embodiment designs according to band theory, improves luminous efficiency.
The active layer of the present embodiment is this superlattice multiple quantum well layer 400, is conducive to improve the luminous efficiency of LED.
Embodiment tetra-
Fig. 5 is the luminescent device structural representation of the embodiment of the present invention four.
The present embodiment is to propose on the basis of embodiment tri-, and the luminescent device of the present embodiment has the cascade structure of superlattice multiple quantum well layer structure, has a plurality of superlattice multiple quantum well layers, generally has 3 to 5 superlattice multiple quantum well layers.The multiple quantum well layer of superlattice partly or completely in the present embodiment also can be substituted by superlattice single quantum well layer.This cascade structure has middle barrier layer 450 and superlattice multiple quantum well layer 440.This centre barrier layer 450 is preferably gallium nitride semiconductor layers, and its thickness is 20nm.This cascade structure preferably connects the second superlattice semiconductor layer 700, these superlattice multiple quantum well layer 440 connection first superlattice semiconductor layers 600 with middle barrier layer 450.This structure can better promote crystal mass, reduces electronics and escapes, and improves luminous efficiency.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. a luminescent device with superlattice structure active layer, comprise matrix and be formed at the multilayer III-V group-III nitride semiconductor structure on described matrix, described semiconductor structure comprises the first semiconductor layer being formed at successively on described matrix, active layer and the second semiconductor layer, it is characterized in that, described active layer comprises superlattice quantum well layer, described superlattice quantum well layer comprises barrier layer and superlattice potential well layer, the material of described the first semiconductor layer and the second semiconductor layer is gallium nitride-based semiconductor, the material of described active layer is InGaN semiconductor, described superlattice potential well layer is formed by the different nitride multilayer indium gallium semiconductor lamella periodic arrangement of indium content, the indium content of the nitride multilayer indium gallium semiconductor lamella in single cycle successively decreases or first increases and then decreases from bottom to up.
2. the luminescent device with superlattice structure active layer as claimed in claim 1, is characterized in that, the thickness range of described barrier layer is 5～20nm, and the thickness range of described superlattice potential well layer is 3～10nm.
3. the luminescent device with superlattice structure active layer as claimed in claim 1, is characterized in that, described superlattice quantum well layer is superlattice multiple quantum well layers, and described superlattice multiple quantum well layer comprises alternately laminated barrier layer and superlattice potential well layer.
4. the luminescent device with superlattice structure active layer as claimed in claim 1, is characterized in that, described active layer comprises a plurality of superlattice quantum well layers, is formed with an interval barrier layer between described superlattice quantum well layer.
5. the luminescent device with superlattice structure active layer as claimed in claim 1, is characterized in that, the indium content range of described superlattice potential well layer is 1at%～30at%.
6. the luminescent device with superlattice structure active layer as claimed in claim 1, it is characterized in that, described nitride multilayer indium gallium semiconductor lamella is divided into the different semiconductor unit of some indium content, and described semiconductor unit comprises the nitride multilayer indium gallium semiconductor lamella that alternately laminated indium content is different.
7. the luminescent device with superlattice structure active layer as claimed in claim 1, is characterized in that, between described the first semiconductor layer and active layer, also comprises the first superlattice semiconductor layer.
8. the luminescent device with superlattice structure active layer as claimed in claim 7, is characterized in that, described the first superlattice semiconductor layer comprises alternately laminated n type gallium nitride semiconductor lamella and InGaN semiconductor lamella.
, the luminescent device with superlattice structure active layer as claimed in claim 1, it is characterized in that, between described the second semiconductor layer and active layer, also comprise the second superlattice semiconductor layer.
10. the luminescent device with superlattice structure active layer as claimed in claim 9, is characterized in that, described the second superlattice semiconductor layer comprises alternately laminated P type gallium nitride semiconductor thin layer and aluminium gallium nitride alloy semiconductor lamella.
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| FR3004005B1 (en) * | 2013-03-28 | 2016-11-25 | Commissariat Energie Atomique | MULTI-QUANTUM WELL ELECTROLUMINESCENT DIODE AND ASYMMETRIC P-N JUNCTION |
| CN104201266B (en) * | 2014-09-16 | 2017-03-22 | 太原理工大学 | GaN-based deep ultraviolet LED active area structure |
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