CN201829523U - Photonic quasi-crystal heavy barrel-light emitting diode (HB-LED) chip of metal substrate in vertical structure - Google Patents
Photonic quasi-crystal heavy barrel-light emitting diode (HB-LED) chip of metal substrate in vertical structure Download PDFInfo
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- CN201829523U CN201829523U CN2010205315965U CN201020531596U CN201829523U CN 201829523 U CN201829523 U CN 201829523U CN 2010205315965 U CN2010205315965 U CN 2010205315965U CN 201020531596 U CN201020531596 U CN 201020531596U CN 201829523 U CN201829523 U CN 201829523U
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Abstract
The utility model relates to a photonic quasi-crystal heavy barrel-light emitting diode (HB-LED) chip of a metal substrate in a vertical structure, which comprises a metal substrate, wherein an epitaxial wafer is arranged on the metal substrate, passivation protective layers are arranged at both sides of the epitaxial wafer, the epitaxial wafer sequentially comprises a metal bonding layer, a metal reflecting layer, a current expansion and P type ohm contact layer, a P type semiconductor layer, a luminous layer, an N type semiconductor layer, a current baffle layer, a transparent conductive layer and an N type electrode from bottom to top, the transparent conductive layer has a photonic quasi-crystal structure, and the passivation protective layers are arranged at both sides of the epitaxial wafer arranged on the metal substrate. The light outlet efficiency is improved, the uniform current distribution is realized, the thermal resistance is reduced, and the heat radiation performance is effectively improved.
Description
Technical field
The utility model relates to a kind of vertical stratification metal substrate photonic quasi-crystal HB-led chip, belongs to the semiconductor photoelectronic device field.
Background technology
High brightness LED (High Brightness LED, HB-LED) as the 4th generation light source (semiconductor solid lighting, Solid State Lighting, SSL) main body, it has energy-conservation, environmental protection, life-span is long, volume is little, in light weight, antidetonation, fail safe good (low voltage drive), response time is short, cold light source, rich color, numerous advantages such as applied range, HB-LED has been widely used in the LCD backlit illumination source at present, automotive lighting, the indoor and outdoor general illumination, display screen, traffic lights, Landscape Lighting, various fields such as minitype projection machine.Along with the increase of brightness, the raising of power and the further reduction of cost, it has shown application prospect more and more widely.The output value of high-brightness LED in 2009 is near 6,000,000,000 dollars, and expectation in 2012 will approach 10,000,000,000 dollars, and the year two thousand twenty will reach 1,000 hundred million dollars.HB-LED has presented explosive increase at present.But present HB-LED faces two and has challenge and technical bottleneck: (1) luminous efficiency is low; (2) cost height, this has a strong impact on and restricts HB-LED and enters popularizing of general illumination and application more widely and market.Therefore, increase luminous efficiency, improve brightness and power, reducing cost becomes the technical barrier that present HB-LED urgently needs solution badly and overcomes.
The luminous efficiency of LED is commonly referred to as the external quantum efficiency of assembly, is the internal quantum of assembly and the product of assembly light extraction efficiency.The main characteristic with assembly itself of internal quantum, as assembly material can band, the of heap of stone brilliant composition of defective, impurity and assembly and structure etc. are correlated with.Because HB-LED adopts growth technology and the multi-quantum pit structure of MOCVD usually, in accurately control growing and doping, and reduce aspect such as defective and made a breakthrough, the internal quantum of its epitaxial wafer is near the limit of theoretical internal quantum.Therefore, the space of improving the LED luminous efficiency by the lifting internal quantum is little, and industrial quarters mainly improves the luminous efficiency of LED by the method that increases light extraction efficiency at present.
Present academic industry and industrial quarters have proposed the method for multiple raising light extraction efficiency: upside-down mounting (Flip Chip), reflector (metallic reflector, distributed Bragg reflecting layer, total reflection layer), patterned substrate, surface coarsening (Surface Roughening), photonic crystal, transparent substrates (Transparent Substrate, TS), three-dimensional vertical structure, laser lift-off (Laser Lift-off, LLO), the optimization of Ohmic electrode shape, chip form geometrization structure (parabola, hemisphere, triangle etc.), substrate-transfer, the improvement of process aspect (encapsulation, heat radiation, consider the selection of fluorescent material for white light) etc.But, research report according to U.S. opto-electronics association (OIDA), have only the power of the high-power high HB-LED device of working as single encapsulation to reach more than the 7.5W, luminous efficiency surpasses 200 lm/W, LED just might substitute existing various lighting source fully, becomes the main light source of general illumination.Although industrial quarters and academia have carried out a large amount of research, HB-LED is far from reaching this specification requirement at present, and HB-LED still faces the requirement of further raising brightness.In addition, compare with three generations's light source with the existing second generation, HB-LED its selling at exorbitant prices at present also is to restrict the obstacle that HB-LED enters general illumination field maximum at present simultaneously.Therefore, luminous efficiency is hanged down and the cost height is that current HB-LED faces maximum challenge, also is the key problem that needs to be resolved hurrily and break through.
Photonic crystal LED is thought to improve by industry at present and is got optical efficiency, realizes one of effective technical means of ultra-high brightness LED.Theoretical research shows to be pointed out, geometrical structure parameter by the appropriate design photonic crystal (shape, cycle, highly, parameter such as duty ratio), even adopt conventional chip structure, and keep original substrate, adopt its light extraction efficiency of surperficial photonic crystal also can reach 40%.Philips Lumileds researcher developed light extraction efficiency in 2009 and reaches 73% photonic crystal LED (optimal components of this group has the gallium nitride film of thick 700 nm, and make the dark photonic crystal pattern of 250 nm in the dry etching mode, so that allow x-ray diffraction leave LED.Optimal photonic crystal has the A13 lattice, and it is the triangle that unit cell is made up of 13 holes, and lattice constant is 450nm), its maximum brightness is 2 times (Vol. 3 for Nature, Photonics, and p. 163,2009.) of at present general LED.Luminus Devices employing early photonic crystal, obtained the photonic crystal LED of 107 lm/W at the end of Year 2008, become the new performance indicators of this device.The said firm will develop high brightness photon crystal PhatLight LED and be applied in (for example 56 cun rear-projection TVs of Samsung) and minitype projection machine in some high-end TVs.Cree will have obtained the photonic crystal LED of 107lm/W in the end of the year 2008, become the new performance indicators of this assembly.
Compare with photonic crystal LED, photonic quasi-crystal (photon is accurate brilliant) structure LED shows better optical characteristics.Accurate brilliant photonic crystal (Photonic Quasi-crystals, PQCs) be that a kind of dielectric material is the photonic bandgap material that quasicrystal structure is arranged, it has rotational symmetry and long-range directive property, but do not have translational symmetry (periodically), and show the short distance randomness and the characteristic of long-range order.The remarkable difference of photonic quasi-crystal and photonic crystal is that the dielectric constant of photonic crystal distributes by the cycle lattice, and the accurate brilliant dielectric constant of photon distributes according to the quasi-crystalline lattice minor structure.Photonic quasi-crystal has that the refractive index threshold value that produces complete band gap is low, photon band gap is irrelevant with incident direction, produce the local attitude need not the performance that defective etc. is better than the periodicity photonic crystal.In addition, periodic structure photonic crystal far-field emission only is confined to summit, Prague, is difficult to realize the illuminance uniformity (uniform illumination of far-field) in far field.Limited photonic crystal LED application in a lot of fields.And photonic quasi-crystal can obtain the desirable far field illumination of uniformity.In addition, for 2 D photon crystal, because triangular lattice has higher symmetry, photonic crystal LED adopts this structure usually.But aim at photonic crystal, its permutations is more, wherein some is even can form the high rotational symmetry structure of 8,9,10,12 weights (fold) etc., such symmetry makes that on the high symmetric points of reciprocal lattice occur can rank degeneracys (degeneracy), and has bigger possibility broad-band gap to occur.So two-dimentional photonic quasi-crystal is because it can have the rotational symmetry higher than 2 D photon crystal, thereby its frequency bandwidth characteristics is little to the influence of the incident direction of light, so easier formation complete photonic band gap.
With the photonic quasi-crystal structure applications in LED, and get the method (for example reflector, current blocking and diffusion layer, vertical stratification, metal substrate etc.) of optical efficiency in conjunction with other height, can further promote the light extraction efficiency of HB-LED, effectively promote the brightness and the power of light-emitting diode.For the exploitation that realizes power type high brightness and ultra-high brightness LED provides a kind of brand-new thinking and method.
Nano-imprint lithography (Nanoimprint Lithography, NIL) be a kind of new nanostructure manufacture method, it has characteristics such as high resolution, Ultra Low Cost (internal authority mechanism assesses the NIL of equal production technique than the low at least order of magnitude of traditional optical projection lithography) and high production rate, and its most significant advantage is the ability (especially for soft UV-NIL) that large tracts of land and complex three-dimensional micro-nano structure are made.In addition, NIL realizes that by the stress deformation of resist it is graphical, does not relate to the use of various high energy beams, and is little for the damage of substrate.But also has the ability of full wafer wafer impression.Companies such as SUSS, MII and Obducat have all developed the nano-imprinting apparatus that is used to make photonic crystal LED at present, and nano-imprint lithography is showing huge potential aspect low cost, scale manufacturing photonic crystal and the photonic quasi-crystal LED.Compare with micro-nano manufacture method manufacturing photonic crystal such as electron beam lithography, holographic lithography, anodic oxidation aluminium formwork (AAO), dry etching and photonic quasi-crystal structure, NIL has that cost is low, productivity ratio is high, can make the big advantage of wafer size, and can make photonic crystal and photonic quasi-crystal structure significant advantage on the out-of-flatness wafer.For the manufacturing of large tracts of land, low-cost photon crystal and photonic quasi-crystal structure and device provides a kind of desirable method.
The utility model content
The purpose of this utility model is, a kind of vertical stratification metal substrate photonic quasi-crystal HB-led chip is provided.
To achieve these goals, the utility model is taked following technical solution:
A kind of vertical stratification metal substrate photonic quasi-crystal HB-led chip comprises: a metal substrate, on metal substrate, be provided with epitaxial wafer, and described epitaxial wafer both sides are provided with the passivation protection layer; Described epitaxial wafer is bottom-up to be followed successively by: metal bonding layer, metallic reflector, current expansion and P type ohmic contact layer, p type semiconductor layer, luminescent layer, n type semiconductor layer, current barrier layer, the transparency conducting layer with photonic quasi-crystal structure and N type electrode; Described passivation protection layer is positioned at epitaxial wafer both sides on the metal substrate.
Described electrically conducting transparent layer material is tin indium oxide ITO or zinc oxide ZnO layer, and its thickness is 300nm-800nm; Adopt 8 heavy or 12 heavy two-dimentional photonic quasi-crystal structures, lattice constant 200-900nm, the height 50nm-300nm of photonic crystal.
Described metal substrate comprises undermost P type electrode, the substrate layer of centre and the metal bonding layer on the substrate layer; Substrate layer is a kind of in copper, copper alloy, aluminium alloy, silver, nickel or the nickel/copper; Or employing silicon substrate; P type electrode is Ti/Au, Ni/Au or Cr/Au, thickness 100nm-400nm.
Described metal bonding layer is that metal substrate and epitaxial wafer are shared, is the one or any two kinds combination among Ni/Au, Ti/Cu, Ti/Au or the Au/Sn.
Described luminescent layer comprises multi-layer quantum well structure, double-heterostructure, multiple layer hetero quantum point structure or multi-layer quantum line; The thickness of described current barrier layer is 100mm-200nm;
Described N type electrode is Ti/Al, Ti/Au, Cr/Au or Ti/AI/Ti/Au, thickness 100-400nm.
Described passivation protection layer is silicon dioxide SiO
2Or silicon nitride Si
3N
4, thickness is 100nm-600nm.
It is applicable to the manufacturing of III-V family, II-IV family, III group-III nitride semiconductor luminescent material system light-emitting diode
It is used for the manufacturing of GaN based light-emitting diode.
A kind of vertical stratification metal substrate photonic quasi-crystal HB-led chip manufacture method comprises following processing step: (1) epitaxial wafer manufacturing; (2) metal substrate manufacturing; (3) bonding of epitaxial wafer and metal substrate; (4) peel off original substrate on the epitaxial wafer; (5) current barrier layer manufacturing; (6) has the manufacturing of photonic quasi-crystal structure transparency conducting layer; (7) making of N type and P type Ohmic electrode; (8) the passivation protection layer is made.
Described epitaxial wafer manufacture method: at first adopt the growth successively on substrate of metal organic chemical deposition epitaxy technique: nucleating layer, resilient coating, n type semiconductor layer, luminescent layer, p type semiconductor layer; Subsequently, adopt electron beam evaporation process deposition current expansion and P type ohmic contact layer and metallic reflector on p type semiconductor layer; At last, by magnetron sputtering splash-proofing sputtering metal bonded layer on metallic reflector.
Described manufacture method: at first adopt electron beam evaporation process evaporation transparency conducting layer on N type semiconductor and current barrier layer with photonic quasi-crystal structure transparency conducting layer; Subsequently, adopt soft ultraviolet nanometer impression and plasma etch process on transparency conducting layer, to produce the photonic quasi-crystal structure.
In the utility model,
1) epitaxial wafer manufacturing
Epitaxial wafer is a substrate with sapphire, carborundum (SiC), silicon (Si), gallium nitride (GaN), zinc oxide (ZnO) etc., adopts metal organic chemical deposition (MOCVD) epitaxy technique to grow successively: nucleating layer, resilient coating, n type semiconductor layer, luminescent layer, p type semiconductor layer; Subsequently, adopt electron beam evaporation process deposition current expansion and P type ohmic contact layer and metallic reflector on p type semiconductor layer; At last, by magnetron sputtering splash-proofing sputtering metal bonded layer on metallic reflector.
2) manufacturing of metal substrate
With metal or metal alloy is translate substrate, thereon the splash-proofing sputtering metal bonded layer.
3) bonding of epitaxial wafer and metal substrate
Adopt metal bonding technology that epitaxial wafer is transferred on the metal substrate.
4) peel off original substrate on the epitaxial wafer
(Laser Lift-Off LLO) removes original substrate on the epitaxial wafer to adopt laser lift-off.
5) current barrier layer manufacturing
On n type semiconductor layer, deposit SiO
2, adopt photoetching and etching technics to make current barrier layer.
6) has the manufacturing of photonic quasi-crystal structure transparency conducting layer
At first adopt electron beam evaporation process evaporation transparency conducting layer on N type semiconductor and current barrier layer; Subsequently, adopt soft ultraviolet nanometer impression and plasma etch process (ICP) on transparency conducting layer, to produce the photonic quasi-crystal structure.
7) making of N type and P type Ohmic electrode
Adopt photoetching and electron beam evaporation to make N type and P type Ohmic electrode.
8) the passivation protection layer is made
Epitaxial wafer both sides deposition passivation protection layer on substrate.
For luminous efficiency and the power that improves HB-LED, the utility model comprehensively by the following technical solutions:
(1) improves light extraction efficiency: get optical efficiency by adopting photonic quasi-crystal structure and reflector directly to improve; (2) improve CURRENT DISTRIBUTION: realize that by adopting vertical stratification design, current extending and current barrier layer electric current evenly distributes, reduce the electric current congestion phenomenon, improve indirectly and get optical efficiency; (3) improve heat dispersion: by adopting metal or metal alloy substrate, reduce thermal resistance, effectively improve heat dissipation characteristics, improve indirectly and get optical efficiency and improve its power.
In order to reduce the production cost of HB-LED, the utility model by the following technical solutions:
(1) adopts soft ultraviolet nanometer imprint lithography to make the photonic quasi-crystal structure, realize its large tracts of land, low cost and change manufacturing on a large scale; (2) realize epitaxial wafer is transferred on the metal substrate by employing metal bonding technology and laser lift-off, and peel off the original substrate of epitaxial wafer.
The backing material that the utility model epitaxial wafer uses in preparation process comprises: sapphire, carborundum (SiC), silicon (Si), gallium nitride (GaN), GaAs (GaAs), zinc oxide (ZnO) or aluminium nitride (AlN).
The utility model luminescent layer (active layer) comprises quantum well structure, heterojunction structure, quantum-dot structure or quantum wire.
The current extending and the P type ohmic contact layer of the utility model epitaxial wafer deposition comprise: Ni/Au, ITO or ZnO; Metallic reflector comprises: Ni/Ag or Ag/Cu.
It is substrate that the utility model adopts conduction and good metal or the metal alloy of heat conductivility, comprises metallic copper, copper alloy, aluminium alloy, silver, nickel or nickel/copper.Also can adopt silicon substrate, its thickness of substrate is 10 μ m-400 μ m.
Metal bonding layer on the utility model metal substrate and the epitaxial wafer comprises Ni/Au, Ti/Cu, Ti/Au or Au/Sn, perhaps both combinations arbitrarily.
The utility model electrically conducting transparent layer material comprises tin indium oxide (ITO) and zinc oxide (ZnO), and its thickness is 300nm-800nm.
The thickness of the utility model current barrier layer is 100mm-200nm.
The utility model adopts 8 heavy or 12 heavy two-dimentional photonic quasi-crystal structures, lattice constant 200-900nm, the height 50nm-300nm of photonic crystal.
The utility model two dimension photonic quasi-crystal structure has long-range order but the short distance randomness.By optimizing photonic quasi-crystal the structure distance, the size and the degree of depth (highly) of figure of contiguous figure, can further promote light extraction efficiency.
The utility model N type electrode comprises Ti/Al, Ti/Au, Cr/Au or Ti/AI/Ti/Au; P type electrode comprises Ti/Au, Ni/Au or Cr/Au.
The utility model passivation protection layer comprises silicon dioxide (SiO
2) or silicon nitride (Si
3N
4).Its thickness is 100nm-600nm.
The utility model is applicable to the manufacturing of III-V family, II-IV family, III group-III nitride semiconductor luminescent material system light-emitting diode, especially is fit to the manufacturing of GaN based light-emitting diode.
The utility model has the advantages that:
1) advantage that fully designs in conjunction with photonic quasi-crystal, metallic reflector, current extending and current barrier layer, metal substrate and vertical stratification, improved light extraction efficiency greatly, realized that electric current evenly distributes, reduce thermal resistance, effectively improve heat dispersion, a kind of method that realizes high brightness, high-power LED chip is provided.
2) the utility model provides and makes this high brightness photonic quasi-crystal technology, has the advantages that production cost is low, efficient, be fit to extensiveization manufacturing.
3) light-emitting diode made of the utility model have that brightness height, power are big, the distinguishing feature of even, the luminous uniformity of far field illumination, light extraction efficiency height, perfect heat-dissipating (thermal resistance is low), low cost of manufacture.
4) the utility model is not only applicable to GaN base blue light, green glow and white light HB-LED, also is applicable to the manufacturing of other wavelength, other material system (III-V, II-IV) light-emitting diode and Organic Light Emitting Diode.
5) optical efficiency is got in the utility model heat dissipation problem and raising that can solve simultaneously led chip effectively.For the exploitation of power type high brightness LED provides a kind of effective solution.
Description of drawings
Fig. 1 is a vertical stratification photonic quasi-crystal LED chip construction schematic diagram of the present utility model.
Fig. 2 is vertical stratification photonic quasi-crystal light-emitting diode chip for backlight unit manufacturing technology steps figure of the present utility model.
Fig. 3 is embodiment 1 a vertical stratification GaN benchmark photonic crystal light-emitting diode chip structure schematic diagram of the present utility model.
Fig. 4 A is the utility model embodiment 1 vertical stratification photonic quasi-crystal light-emitting diode chip for backlight unit schematic diagram of fabrication technology.
Fig. 4 B is the utility model embodiment 1 vertical stratification photonic quasi-crystal light-emitting diode chip for backlight unit schematic diagram of fabrication technology.
Fig. 4 C is the utility model embodiment 1 vertical stratification photonic quasi-crystal light-emitting diode chip for backlight unit schematic diagram of fabrication technology.
Fig. 4 D is the utility model embodiment 1 vertical stratification photonic quasi-crystal light-emitting diode chip for backlight unit schematic diagram of fabrication technology.
Fig. 4 E is the utility model embodiment 1 vertical stratification photonic quasi-crystal light-emitting diode chip for backlight unit schematic diagram of fabrication technology.
Fig. 4 F is the utility model embodiment 1 vertical stratification photonic quasi-crystal light-emitting diode chip for backlight unit schematic diagram of fabrication technology.
Fig. 4 G is the utility model embodiment 1 vertical stratification photonic quasi-crystal light-emitting diode chip for backlight unit schematic diagram of fabrication technology.
Fig. 4 H is the utility model embodiment 1 vertical stratification photonic quasi-crystal light-emitting diode chip for backlight unit schematic diagram of fabrication technology.
Fig. 4 I is the utility model embodiment 1 vertical stratification photonic quasi-crystal light-emitting diode chip for backlight unit schematic diagram of fabrication technology.
Fig. 4 J is the utility model embodiment 1 vertical stratification photonic quasi-crystal light-emitting diode chip for backlight unit schematic diagram of fabrication technology.
Fig. 4 K is the utility model embodiment 1 vertical stratification photonic quasi-crystal light-emitting diode chip for backlight unit schematic diagram of fabrication technology.
Fig. 5 is the epitaxial slice structure schematic diagram that the utility model embodiment 1 makes.
Fig. 6 A is that the utility model embodiment 1 adopts soft ultraviolet nanometer impression and plasma etching (ICP) technology to produce the photonic quasi-crystal structural representation on transparency conducting layer.
Fig. 6 B is that the utility model embodiment 1 adopts soft ultraviolet nanometer impression and plasma etching (ICP) technology to produce the photonic quasi-crystal structural representation on transparency conducting layer.
Fig. 6 C is that the utility model embodiment 1 adopts soft ultraviolet nanometer impression and plasma etching (ICP) technology to produce the photonic quasi-crystal structural representation on transparency conducting layer.
Fig. 6 D is that the utility model embodiment 1 adopts soft ultraviolet nanometer impression and plasma etching (ICP) technology to produce the photonic quasi-crystal structural representation on transparency conducting layer.
Fig. 6 E is that the utility model embodiment 1 adopts soft ultraviolet nanometer impression and plasma etching (ICP) technology to produce the photonic quasi-crystal structural representation on transparency conducting layer.
Fig. 6 F is that the utility model embodiment 1 adopts soft ultraviolet nanometer impression and plasma etching (ICP) technology to produce the photonic quasi-crystal structural representation on transparency conducting layer.
Fig. 7 is the utility model embodiment 1 photonic quasi-crystal structural representation.
Fig. 8 is the structural representation of the utility model embodiment 2.
Fig. 9 is the utility model embodiment 2 photonic quasi-crystal structural representations.
Embodiment
The utility model is described in further detail according to the embodiment that the technical solution of the utility model provides below in conjunction with accompanying drawing and utility model people.
Vertical stratification metal substrate photonic quasi-crystal LED chip construction schematic diagram is referring to Fig. 1, mainly by metal substrate 1, and the epitaxial wafer 2 on the metal substrate 1, passivation protection layer 3 three part of epitaxial wafer 2 both sides are formed.Metal substrate 1 comprises the substrate 102 of undermost P type electrode 101, centre, and the metal bonding layer 201 of this layer of metal bonding layer 103(on the substrate 102 and epitaxial wafer 2 is shared relations).Epitaxial wafer 2 bottom-up being followed successively by on the metal substrate 1: metal bonding layer 201, metallic reflector 202; Current expansion and P type ohmic contact layer 203; P type semiconductor layer 204; Luminescent layer 205; N type semiconductor layer 206; Current barrier layer 207; Transparency conducting layer 208 with photonic quasi-crystal structure; N type electrode 209.Passivation protection layer 3 is positioned at the both sides of epitaxial wafer 2 on the metal substrate 1.
Vertical stratification metal substrate photonic quasi-crystal light-emitting diode chip for backlight unit manufacturing technology steps comprises: (1) epitaxial wafer manufacturing referring to Fig. 2; (2) metal substrate manufacturing; (3) bonding of epitaxial wafer and metal substrate; (4) peel off original substrate on the epitaxial wafer; (5) current barrier layer manufacturing; (6) has the manufacturing of photonic quasi-crystal structure transparency conducting layer; (7) making of N type and P type Ohmic electrode; (8) the passivation protection layer is made.
With metallic copper (Cu) is substrate, and vertical stratification GaN benchmark photonic crystal LED is embodiment 1, and its concrete structural representation as shown in Figure 3.Comprise: vertical stratification GaN benchmark photonic crystal LED is followed successively by from bottom to top: the P type electrode 101 of Ti/Au; Metal Cu substrate 102; Ti/Cu material metal bonded layer 103,201; The metallic reflector 202 of Ni/Ag; The current expansion of Ni/Au and P type ohmic contact layer 203; The p type semiconductor layer 204 of P-GaN; 5 layers of InGaN/GaN Multiple Quantum Well (MQW) luminescent layer 205; The n type semiconductor layer 206 of N-GaN; SiO
2 Current barrier layer 207; The transparency conducting layer with photonic quasi-crystal structure 208 of ITO; The N type electrode 209 of Cr/Au; SiO
2 Passivation protection layer 3.
The present embodiment 1 concrete method of making:
Fig. 4 A-Fig. 4 K is a vertical stratification photonic quasi-crystal light-emitting diode chip for backlight unit schematic diagram of fabrication technology of the present utility model, and concrete processing step is as follows:
1) epitaxial wafer manufacturing
The manufacturing of epitaxial wafer as Fig. 4 A to shown in Fig. 4 D.
Adopt metal organic chemical deposition (MOCVD) epitaxy technique, growth 50nm GaN nucleating layer 212 on Sapphire Substrate 213, the 2 μ m GaN resilient coatings 211 that do not mix of on nucleating layer 212, growing; 206,5 layers of n type semiconductor layers p type semiconductor layer 204(such as Fig. 4 A of the P-GaN of mqw light emitting layer 205, the 200nm of 100nm altogether of 3 μ m N-GaN successively then grow); Subsequently, adopt electron beam evaporation process on p type semiconductor layer, to deposit 50nm Ni/Au current expansion and P type ohmic contact layer 203(such as Fig. 4 B), metallic reflector 202(such as Fig. 4 C of 100nmNi/Ag), at last, metal bonding layer 201(such as Fig. 4 D by magnetron sputtering sputter 20nm Ti and 200nm Au on metallic reflector).
Fig. 5 is the epitaxial slice structure schematic diagram that processing step 1 completes, and epitaxial wafer from up to down is followed successively by: Sapphire Substrate 213; Nucleating layer 212; Resilient coating 211; N type semiconductor layer 206; Luminescent layer 205; P type semiconductor layer 204; Current expansion and P type ohmic contact layer 203; Metallic reflector 202; Metal bonding layer 201.
2) manufacturing of metal substrate
With copper (Cu) is substrate 102, adopts the magnetron sputtering technique Ti/Au metal bonding layer 103 of sputter 20nm/200nm thereon.
3) bonding of epitaxial wafer and metal substrate
Adopt the metal melting bonding technology, epitaxial wafer is transferred on the metal substrate.Be bonded interface with Ti/Au metal bonding layer 201 on the epitaxial wafer and the Ti/Au metal bonding layer 103 on the Cu substrate respectively.Shown in Fig. 4 E.
4) peel off Sapphire Substrate on the epitaxial wafer
Adopt laser lift-off (Laser Lift-Off, LLO) Sapphire Substrate 213, GaN nucleating layer 212 and the resilient coating 211 of removal epitaxial wafer.Shown in Fig. 4 F.
5) manufacturing of current barrier layer
(Plasma-enhanced chemical vapor deposition, PECVD) technology deposits the thick SiO of 50nm on the n type semiconductor layer 206 of N-GaN at first to adopt the plasma-reinforced chemical hydatogenesis
2 Current barrier layer 207; Subsequently, adopt photoetching and etching technics to produce protruding mesa structure (100
μM X 100
μM), what the size of current barrier layer 207 should be with N type electrode 209 is big or small consistent, and be positioned at N type electrode 209 under.Shown in Fig. 4 G.
6) has the manufacturing of photonic quasi-crystal structure transparency conducting layer
At first adopt n type semiconductor layer 206 and the SiO of electron beam evaporation process at N-GaN
2Evaporation 200nmITO transparency conducting layer 208 on the current barrier layer 207 is shown in Fig. 4 H; Subsequently, adopt soft ultraviolet nanometer impression and plasma etching (ICP) technology on ITO transparency conducting layer 208, to produce the photonic quasi-crystal structure.Shown in Fig. 4 I.
Fig. 6 A-Fig. 6 F adopts soft ultraviolet nanometer impression and plasma etching (ICP) technology to produce photonic quasi-crystal structural manufacturing process schematic diagram on ITO transparency conducting layer 208.Fig. 6 A is a deposition 30nmCr layer 501 on ITO transparency conducting layer 208, then on Cr layer 501 surface again Rotating with Uniform be coated with the used resist 502 of shop 200nmUV nano impression; Fig. 6 B has after the mould of photonic quasi-crystal structure and substrate and epitaxial wafer align, and presses to resist, realizes that photonic quasi-crystal structure on the mould is to the transfer of resist feature pattern; Subsequently, adopt ultraviolet light from mould back side illuminaton anticorrosive additive material, behind the exposure curing molding, the demoulding copies mould photonic quasi-crystal structure 511 behind development, the post bake on resist 502; Fig. 6 C removes the photoresist 514 of residual layer for using reactive ion etching RIE (Reactive Ion Etching), copies mould photonic quasi-crystal structure 511 on anticorrosive additive material; Fig. 6 D is mask for adopting inductively coupled plasma etching (ICP) technology with the figure on the resist, etching Cr layer 501; Fig. 6 E is for being mask with the figure on the Cr layer 501, and etching ITO transparency conducting layer 208 is transferred to ITO transparency conducting layer 208 with the photonic quasi-crystal structure 511 on the resist; Fig. 6 F produces photonic quasi-crystal structure 511 for removing resist 502 and Cr layer 501 on ITO transparency conducting layer 208.The feature structure of transferring on the ITO transparency conducting layer 208 is 12 heavy two-dimentional photonic quasi-crystal structures 511, and the diameter 100nm in hole, fill factor, curve factor 26%, the height 100nm(of photonic quasi-crystal are as shown in Figure 7).
7) making of N type and P type Ohmic electrode
With Cr/Au is N type electrode 209, and Ti/Au is a P type electrode 101.Adopt the method for electron beam evaporation to make N type electrode 209, thickness of electrode 400nm.Adopt the method for photoetching and electron beam evaporation to make P type electrode 101, thickness of electrode 200nm.Shown in Fig. 4 J.
8) the passivation protection layer is made
With SiO
2Be the passivation protection layer material, utilize plasma activated chemical vapour deposition epitaxial wafer both sides deposition 200nm passivation protection layer 3 on substrate.Shown in Fig. 4 K.
As shown in Figure 8, present embodiment is similar to embodiment 1, and its difference is: substrate 102 is copper alloys; The current extending of ITO and P type ohmic contact layer 203; The metallic reflector 202 of Ag/Cu; The transparency conducting layer 208 of zinc oxide (ZnO); Silicon nitride (Si
3N
4) passivation protection layer 3.Feature structure on the transparency conducting layer 208 of ZnO is 12 heavy sunflower types two dimension photonic quasi-crystal structures 511, the average diameter 80nm of airport, and the hole heart distance of contiguous airport is about 200nm, the height 120nm(of photonic quasi-crystal is as shown in Figure 9).
The utility model is made the photonic quasi-crystal structure on transparency conducting layer, avoid active layer is produced than macrolesion, influences the LED luminous efficiency.
In addition, those skilled in the art also can do other variation in the utility model spirit.Certainly, the variation that these are done according to the utility model spirit all should be included in the utility model scope required for protection.
Claims (7)
1. a vertical stratification metal substrate photonic quasi-crystal HB-led chip is characterized in that, comprising: a metal substrate, on metal substrate, be provided with epitaxial wafer, and described epitaxial wafer both sides are provided with the passivation protection layer; Described epitaxial wafer is bottom-up to be followed successively by: metal bonding layer, metallic reflector, current expansion and P type ohmic contact layer, p type semiconductor layer, luminescent layer, n type semiconductor layer, current barrier layer, the transparency conducting layer with photonic quasi-crystal structure and N type electrode; Described passivation protection layer is positioned at epitaxial wafer both sides on the metal substrate.
2. vertical stratification metal substrate photonic quasi-crystal HB-led chip as claimed in claim 1 is characterized in that described electrically conducting transparent layer material is tin indium oxide ITO or zinc oxide ZnO layer, and its thickness is 300nm-800nm; Adopt 8 heavy or 12 heavy two-dimentional photonic quasi-crystal structures, lattice constant 200-900nm, the height 50nm-300nm of photonic crystal.
3. vertical stratification metal substrate photonic quasi-crystal HB-led chip as claimed in claim 1 is characterized in that, described metal substrate comprises undermost P type electrode, the substrate layer of centre and the metal bonding layer on the substrate layer; Substrate layer is a kind of in copper, copper alloy, aluminium alloy, silver, nickel or the nickel/copper; Or employing silicon substrate; P type electrode is Ti/Au, Ni/Au or Cr/Au, thickness 100nm-400nm.
4. as claim 1 or 3 described vertical stratification metal substrate photonic quasi-crystal HB-led chips, it is characterized in that described metal bonding layer is that metal substrate and epitaxial wafer are shared.
5. vertical stratification metal substrate photonic quasi-crystal HB-led chip as claimed in claim 1 is characterized in that described luminescent layer comprises multi-layer quantum well structure, double-heterostructure, multiple layer hetero quantum point structure or multi-layer quantum line; The thickness of described current barrier layer is 100mm-200nm.
6. vertical stratification metal substrate photonic quasi-crystal HB-led chip as claimed in claim 1 is characterized in that described N type electrode is Ti/Al, Ti/Au, Cr/Au or Ti/AI/Ti/Au, thickness 100-400nm.
7. vertical stratification metal substrate photonic quasi-crystal HB-led chip as claimed in claim 1 is characterized in that described passivation protection layer is silicon dioxide SiO
2Or silicon nitride Si
3N
4, thickness is 100nm-600nm.
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| CN2010205315965U CN201829523U (en) | 2010-09-16 | 2010-09-16 | Photonic quasi-crystal heavy barrel-light emitting diode (HB-LED) chip of metal substrate in vertical structure |
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| CN2010205315965U CN201829523U (en) | 2010-09-16 | 2010-09-16 | Photonic quasi-crystal heavy barrel-light emitting diode (HB-LED) chip of metal substrate in vertical structure |
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| CN201829523U true CN201829523U (en) | 2011-05-11 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107910412A (en) * | 2017-11-17 | 2018-04-13 | 扬州乾照光电有限公司 | A kind of light emitting diode and production method |
| CN114094440A (en) * | 2021-10-22 | 2022-02-25 | 南京邮电大学 | GaN basal plane emitting laser based on thin film overturning process and preparation method |
-
2010
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107910412A (en) * | 2017-11-17 | 2018-04-13 | 扬州乾照光电有限公司 | A kind of light emitting diode and production method |
| CN114094440A (en) * | 2021-10-22 | 2022-02-25 | 南京邮电大学 | GaN basal plane emitting laser based on thin film overturning process and preparation method |
| CN114094440B (en) * | 2021-10-22 | 2024-03-26 | 南京邮电大学 | GaN base surface emitting laser based on film overturning process and preparation method |
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