CN202259401U - High-power and high-brightness LED (Light Emitting Diode) chip - Google Patents
High-power and high-brightness LED (Light Emitting Diode) chip Download PDFInfo
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- CN202259401U CN202259401U CN2011203433904U CN201120343390U CN202259401U CN 202259401 U CN202259401 U CN 202259401U CN 2011203433904 U CN2011203433904 U CN 2011203433904U CN 201120343390 U CN201120343390 U CN 201120343390U CN 202259401 U CN202259401 U CN 202259401U
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Abstract
The utility model discloses a high-power and high-brightness LED (Light Emitting Diode) chip comprising a metal substrate, wherein the metal substrate is provided with an LED epitaxial wafer embedded into a quasi photonic crystal structure, and two sides of the epitaxial wafer are respectively provided with a passivation protective layer; the epitaxial wafer is sequentially provided with a metal bonding layer, a metal reflecting layer, a current expansion and P-type ohmic contact layer, a P-type semiconductor layer, a light emitting layer, an N-type semiconductor layer embedded into the quasi photonic crystal structure and an N-type ohmic contact electrode; and the passivation protective layer is arranged at two sides of the epitaxial wafer on the metal substrate. The utility model also discloses a manufacturing method of the chip. By using the high-power and high-brightness LED chip and the manufacturing method thereof, efficient light acquisition and effective heat radiation of the LED chip are simultaneously realized, the defect of a surface photonic crystal LED structure is overcome, and an effective solution scheme is provided to the development of high-power and high-brightness LEDs.
Description
Technical field
The utility model relates to a kind of metal substrate vertical stratification and embeds the photonic quasi-crystal led chip, relates in particular to a kind of high-power and high-luminance light-emitting diode chip for backlight unit, belongs to the semiconductor lighting technology and receives field of optoelectronic devices.
Background technology
High-power, high-brightness LED has been applied to automotive lighting, indoor and outdoor general illumination, LCD backlit illumination source or the like various fields; Along with improving constantly of power and brightness; The continuous reduction of cost, LED finally will replace existing general illumination light source, becomes the new generation of green light source.But LED still faces following challenge technical barrier at present:
(1) luminous efficiency is low;
(2) power is low;
(3) cost is high.
This has a strong impact on and restricts LED and gets into popularizing of general illumination and application more widely and market.Therefore, increase luminous efficiency, improve brightness and power, reducing cost becomes the technical barrier that present LED urgently needs solution badly.
Present academic industry and industrial quarters have proposed the method for multiple raising light extraction efficiency: upside-down mounting (Flip Chip), reflector (metallic reflector, distributed Bragg reflecting layer, total reflection layer), patterned substrate, surface coarsening (Surface Roughening), photonic crystal, transparent substrates (Transparent Substrate; TS), three-dimensional vertical structure, laser lift-off (Laser Lift-off, LLO), the improvement of the optimization of Ohmic electrode shape, chip form geometrization structure (parabola, hemisphere, triangle etc.), substrate-transfer, process aspect (encapsulation, heat radiation, consider the selection of fluorescent material for white light) etc.Photonic crystal LED is thought to improve by industry at present and is got optical efficiency, realizes one of effective technical means of ultra-high brightness LED.Theoretical research shows to be pointed out; Geometrical structure parameter through the appropriate design photonic crystal (shape, cycle, highly, parameter such as duty ratio); Even adopt conventional chip structure, and keep original substrate, adopt its light extraction efficiency of surperficial photonic crystal also can reach 40%.Philips Lumileds researcher developed light extraction efficiency in 2009 and reaches 73% photonic crystal LED (optimal components of this group has the gallium nitride film of thick 700nm; And make the dark photonic crystal pattern of 250nm with the dry etching mode, so that let x-ray diffraction leave LED.Optimal photonic crystal has the A13 lattice, and it is the triangle that unit cell is made up of 13 holes, and lattice constant is 450nm), its maximum brightness is 2 times of general LED at present (Nature, Photonics, Vol.3, p.163,2009.).Luminus Devices employing early photonic crystal, obtained the photonic crystal LED of 107lm/W at the end of Year 2008, become the new performance indicators of this device.The said firm will develop high brightness photon crystal PhatLight LED and be applied in (for example 56 cun rear-projection TVs of Samsung) and minitype projection machine in some high-end TVs.Cree will have obtained the photonic crystal LED of 107lm/W in the end of the year 2008, become the new performance indicators of this assembly.
Compare with photonic crystal LED, photonic quasi-crystal (photon is accurate brilliant) structure LED shows better optical characteristics.Accurate brilliant photonic crystal (Photonic Quasi-crystals; PQCs) be that a kind of dielectric material is the photonic bandgap material that quasicrystal structure is arranged; It has rotational symmetry and long-range directive property, but does not have translational symmetry (periodically), and shows the short distance randomness and the characteristic of long-range order.The remarkable difference of photonic quasi-crystal and photonic crystal is that the dielectric constant of photonic crystal distributes by the cycle lattice, and the accurate brilliant dielectric constant of photon distributes according to the quasi-crystalline lattice minor structure.Photonic quasi-crystal has that the refractive index threshold value that produces complete band gap is low, photon band gap is irrelevant with incident direction, produce the local attitude need not the performance that defective etc. is superior to the periodicity photonic crystal.In addition, periodic structure photonic crystal far-field emission only is confined to summit, Prague, is difficult to realize the illuminance uniformity (uniform illumination of far-field) in far field.Limited photonic crystal LED application in a lot of fields.And photonic quasi-crystal can obtain the desirable far field illumination of uniformity.In addition, as far as 2 D photon crystal, because triangular lattice has higher symmetry, photonic crystal LED adopts this structure usually.But aim at photonic crystal; Its permutations is more; Wherein some is even can form the high rotational symmetry structure of 8,9,10,12 weights (fold) etc.; Such symmetry makes that on the high symmetric points of reciprocal lattice occur can rank degeneracys (degeneracy), and has bigger possibility broad-band gap to occur.So two-dimentional photonic quasi-crystal is because it can have the rotational symmetry higher than 2 D photon crystal, thereby its frequency bandwidth characteristics is little to the influence of the incident direction of light, so form complete photonic band gap more easily.
Photonic crystal and photonic quasi-crystal LED have following significant advantage: (1) height is got optical efficiency; (2) good Beam Control and light distribution, especially photonic quasi-crystal have good far-field characteristic.Existing photonic crystal LED mainly is the upper surface formation photon crystal structure at LED, and still, there is following problem in surperficial photonic crystal LED structure: a little less than the coupling of (1) photonic crystal and rudimentary waveguide light, be difficult to realize the extraction to rudimentary waveguide light; (2) in the manufacture process of surperficial photonic crystal, etching technics possibly damage active layer, influences light extraction efficiency; (3) compare with the planar LED structure, the manufacturing difficulty of Ohmic electrode, CURRENT DISTRIBUTION is inhomogeneous, influences electrology characteristic.And the LED of embeddability photon crystal structure not only can realize the extraction of fine mode, low step mode and the various mode light of cover layer pattern, has significantly improved light extraction efficiency.And Ohmic electrode can look like traditional LED and on whole plane, makes; The particularly important is not in surperficial photonic crystal manufacture process, because etching causes the damage of active layer.Therefore, compare with surperficial photonic crystal LED, embedded type photonic crystal LED structure has following advantage: (1) is high gets optical efficiency; (2) good electrology characteristic; (3) good epitaxial wafer quality.
LED mainly contains three kinds of structures at present: the positive assembling structure (side direction structure) that (1) is traditional; (2) inverted structure; (3) vertical stratification.Traditional positive assembling structure LED is the most popular on market, and cost of manufacture is low, but has shortcomings (especially Sapphire Substrate structure) such as poor heat conductivity; Inverted structure LED is representative with the Lumileds of PHILIPS Co., but not from problems such as the heat radiation that solves LED in essence, current unevenness (electric current is congested), life-spans; Two electrodes of the led chip of vertical stratification are respectively in the both sides of LED epitaxial loayer; Since patterned electrodes and whole p-class limitations layer as second electrode, make electric current almost all vertical currents cross the LED epitaxial loayer, the electric current of few lateral flow; Can improve the CURRENT DISTRIBUTION problem of planar structure; Improve luminous efficiency, also can solve the shading problem of the P utmost point, promote the light-emitting area of LED.Especially laser lift-off is removed original substrate, and metal alloys such as employing copper are the vertical stratification of substrate, have well solved the heat dissipation problem of great power LED.In addition, the laser lift-off with the SiC substrate vertical stratification of Cree and Osram, Semileds is representative.Connect mutually with extraneous power supply owing to need not to beat gold thread, the thickness of the encapsulation of the led chip of employing through-hole vertical structure reduces.Therefore, can be used to make extra-thin device, like backlight etc.Therefore, the vertical stratification LED of metal substrate has well solved heat dissipation problem, is particularly suitable for high-power LED chip.
Can further promote the light extraction efficiency of LED in conjunction with embedding photonic quasi-crystal LED, vertical stratification, transversal epitaxial growth, metal substrate, effectively promote the brightness and the power of light-emitting diode, well solve the heat dissipation problem of power-type LED.Therefore, for the exploitation that realizes power type high brightness and ultra-high brightness LED a kind of new way and method are provided.
Nano-imprint lithography (Nanoimprint Lithography; NIL) be a kind of new nanostructure manufacturing approach; It has characteristics such as high resolution, Ultra Low Cost (internal authority mechanism assesses the NIL of equal production technique than the low at least one magnitude of traditional optical projection lithography) and high production rate, and its most significant advantage is the ability (especially for soft UV-NIL) that large tracts of land and complex three-dimensional micro-nano structure are made.In addition, NIL realizes that through the stress deformation of resist it is graphical, does not relate to the use of various high energy beams, and is little for the damage of substrate.But also has the ability of full wafer wafer impression.At present, nano impression has become the graphic sapphire substrate, photonic crystal is made one of optimal technical method.Nano-imprint lithography is showing huge potential aspect low cost, scale manufacturing photonic crystal and the photonic quasi-crystal LED.Compare with micro-nano manufacturing approach manufacturing photonic crystal such as electron beam lithography, holographic lithography, anodic oxidation aluminium formwork (AAO), dry etching and photonic quasi-crystal structure; NIL has that cost is low, productivity ratio is high, can make the big advantage of wafer size, and can on the out-of-flatness wafer, make photonic crystal and photonic quasi-crystal structure and receive aspects such as yardstick substrate graph and have significant advantage.The graphical manufacturing of photonic crystal LED of being as the criterion provides a kind of method of desirable large-scale production.
The utility model content
The purpose of the utility model just is, a kind of high-power and high-luminance light-emitting diode chip for backlight unit is provided.It has low cost, efficient, help the advantage of making in enormous quantities.
To achieve these goals, the utility model is taked following technical solution:
A kind of high-power and high-luminance light-emitting diode chip for backlight unit comprises: a metal substrate, on metal substrate, be provided with the LED epitaxial wafer that embeds the photonic quasi-crystal structure, and the LED epitaxial wafer both sides of said embedding photonic quasi-crystal structure are provided with the passivation protection layer; Bottom-up being followed successively by of LED epitaxial wafer of described embedding photonic quasi-crystal structure: n type semiconductor layer, the N type Ohm contact electrode of metal bonding layer, metallic reflector, current expansion and P type ohmic contact layer, p type semiconductor layer, luminescent layer (active layer), embedding photonic quasi-crystal structure; Said passivation protection layer is positioned at epitaxial wafer both sides on the metal substrate.
The n type semiconductor layer of described embedding photonic quasi-crystal structure, its N type semiconductor layer thickness is 300nm-1500nm; The nanometer medium column material that embeds is dielectric material silicon dioxide or silicon nitride; Adopt the two-dimentional photonic quasi-crystal structure of 8 heavy or 12 heavy or periodic structures, lattice constant 300-700nm, the height 50nm-150nm of photonic quasi-crystal; Said nanometer medium post is set up the inside in n type semiconductor layer.
Said metal substrate comprises orlop P type Ohm contact electrode; Middle for shifting metal substrate and shifting the metal bonding layer on the metal substrate; Said metal bonding layer is included in the metal bonding layer I that shifts the metal substrate sputter; The metal bonding layer II of sputter on the metallic reflector in epitaxial wafer shifts metal substrate and passes through metal bonding layer I, metal bonding layer II bonding with metallic reflector, and the transfer metal substrate is a kind of in copper, copper alloy, aluminium alloy, silver, nickel or the nickel/copper; Or be silicon substrate; P type Ohm contact electrode is any one of Ti/Au, Ni/Au or Cr/Au, thickness 100nm-400nm.
Said metal bonding layer is the one or any two kinds combination among Ni/Au, Ti/Cu, Ti/Au or the Au/Sn.
Said luminescent layer is multi-layer quantum well structure, double-heterostructure, multiple layer hetero quantum point structure or multi-layer quantum line, and its thickness is 50mm-200nm;
Said N type Ohm contact electrode is any one of Ti/Al, Ti/Au, Cr/Au or Ti/AI/Ti/Au, thickness 100-400nm; Said passivation protection layer is silicon dioxide or silicon nitride, and thickness is 100nm-600nm.
A kind of manufacturing approach of high-power and high-luminance light-emitting diode chip for backlight unit comprises following processing step:
(1) manufacturing of epitaxial wafer;
(2) metal substrate manufacturing;
(3) bonding of epitaxial wafer and metal substrate;
(4) peel off original interim substrate on the epitaxial wafer;
(5) remove original nucleating layer of epitaxial wafer and resilient coating;
(6) attenuate has the n type semiconductor layer that embeds the photonic quasi-crystal structure;
(7) making of N type Ohm contact electrode and P type Ohm contact electrode;
(8) the passivation protection layer is made.
Said step (1) epitaxial wafer manufacturing approach:
At first, adopt metal organic chemical deposition extension MOCVD technology on interim substrate, to grow into stratum nucleare, resilient coating, n type semiconductor layer successively;
Secondly, from MOCVD, take out substrate,, adopt nano impression and plasma etch process to form nanometer medium post photonic quasi-crystal structure at dielectric layer at n type semiconductor layer deposition one dielectric layer with nucleating layer, resilient coating and n type semiconductor layer; The epitaxial wafer that will have the photonic quasi-crystal structure is reentered into MOCVD, utilizes to epitaxial growth technology continued growth n type semiconductor layer, luminescent layer, p type semiconductor layer;
Subsequently, from MOCVD, take out epitaxial wafer, adopt electron beam evaporation process deposition current expansion and P type ohmic contact layer and metallic reflector on p type semiconductor layer; At last, through magnetron sputtering splash-proofing sputtering metal bonded layer II on metallic reflector.
The manufacturing approach of the photonic quasi-crystal structure during said embedding photonic quasi-crystal structure LED epitaxial wafer is made:
At first using plasma strengthens that chemical vapor deposition method deposits layer of silicon dioxide on n type semiconductor layer or silicon nitride is a dielectric layer;
Subsequently, adopt nano impression and plasma etching on dielectric layer, to produce nanometer medium post photonic quasi-crystal structure;
At last, remove resist, and clean, remove the dirt and the oxide on dielectric layer surface.
The concrete manufacturing technology steps of a kind of high-power and high-luminance light-emitting diode chip for backlight unit of the utility model:
1) embedding photonic quasi-crystal structure LED epitaxial wafer makes
Embedding photonic quasi-crystal structure LED epitaxial wafer is substrate with sapphire, carborundum (SiC), silicon (Si), gallium nitride (GaN), zinc oxide (ZnO) etc., adopts metal organic chemical deposition (MOCVD) epitaxy technique.Concrete manufacture process comprises:
(a) grow into stratum nucleare, resilient coating, n type semiconductor layer
Substrate is inserted MOCVD, on described substrate, grow into stratum nucleare, resilient coating and n type semiconductor layer successively.
(b) make the photonic quasi-crystal structure
At first, from MOCVD, take out substrate, deposition layer of silicon dioxide or silicon nitride dielectric layer on n type semiconductor layer with nucleating layer, resilient coating and n type semiconductor layer; Subsequently, adopt nano impression and plasma etch process on dielectric layer, to make nanometer medium post photonic quasi-crystal structure; At last, remove resist, and clean to remove the dirt and the oxide on dielectric layer surface.
(c) growth n type semiconductor layer, luminescent layer, p type semiconductor layer
The epitaxial wafer that will have the photonic quasi-crystal structure is inserted MOCVD again, adopts transversal epitaxial growth technology continued growth n type semiconductor layer, continued growth luminescent layer, p type semiconductor layer on N type semiconductor.
(d) deposition current expansion and P type ohmic contact layer and metallic reflector
Adopt electron beam evaporation process deposition current expansion and P type ohmic contact layer and metallic reflector on p type semiconductor layer.
(e) splash-proofing sputtering metal bonded layer
Through magnetron sputtering splash-proofing sputtering metal bonded layer II on metallic reflector.
2) manufacturing of metal substrate
With metal or metal alloy is translate substrate, above that splash-proofing sputtering metal bonded layer I.
3) bonding of embedding photonic quasi-crystal structure LED epitaxial wafer and metal substrate
Adopting metal bonding technology will embed photonic quasi-crystal structure LED epitaxial wafer transfers on the metal substrate.
4) peel off original interim substrate on the epitaxial wafer
(Laser Lift-Off, LLO) perhaps chemistry is removed technology and is peeled off original interim substrate on the epitaxial wafer to adopt laser lift-off.
5) nucleating layer and the resilient coating on the removal epitaxial wafer
Adopt methods such as wafer reduction process or chemico-mechanical polishing to remove original nucleating layer and resilient coating on the epitaxial wafer.
6) attenuate has the n type semiconductor layer that embeds the photonic quasi-crystal structure
Adopt method attenuates such as wafer reduction process or chemico-mechanical polishing to have the n type semiconductor layer that embeds the photonic quasi-crystal structure.
7) making of N type and P type Ohm contact electrode
Adopt photoetching and electron beam evaporation (vapor deposition) to make N type and P type Ohm contact electrode.
8) the passivation protection layer is made
Epitaxial wafer both sides deposition passivation protection layer on substrate.
For the light extraction efficiency and the power that improve LED, the utility model adopts following technical scheme:
(1) improves light extraction efficiency: adopt to embed photonic quasi-crystal structure and reflection layer structure, embed the photonic quasi-crystal structure and can realize adopting the reflector to avoid of the absorption of substrate metal substrate for light to extraction senior, rudimentary and that cover light mode light at different levels; (2) improve CURRENT DISTRIBUTION: through adopting vertical stratification design, current extending and on planar structure, making graphical mesh electrode and realize that electric current evenly distributes, reduce the electric current congestion phenomenon, improve indirectly and get optical efficiency; (3) the utility model embeds the photonic quasi-crystal structure and not only can improve and get optical efficiency, but also can reduce the dislocation density of epitaxial wafer, improves the quality of epitaxial wafer; (4) improve heat dispersion: through adopting metal or metal alloy substrate, reduce thermal resistance, effectively improve heat dissipation characteristics, improve indirectly and get optical efficiency, and effectively improve its power.
In order to reduce a kind of production cost of high-power and high-luminance light-emitting diode chip for backlight unit, the utility model adopts following technical scheme:
(1) adopts soft ultraviolet nanometer imprint lithography to make the photonic quasi-crystal structure, realize its large tracts of land, low cost and change manufacturing on a large scale; (2) realize epitaxial wafer is transferred on the metal substrate through employing metal bonding technology and laser lift-off, and peel off the original interim substrate of epitaxial wafer.
The backing material that the utility model epitaxial wafer uses in the preparation process comprises: sapphire, carborundum (SiC), silicon (Si), gallium nitride (GaN), GaAs (GaAs), zinc oxide (ZnO) or aluminium nitride (AlN).
The utility model luminescent layer comprises quantum well structure, heterojunction structure, quantum-dot structure or quantum wire.
The current extending and the P type ohmic contact layer of the utility model epitaxial wafer deposition comprise: Ni/Au, ITO or ZnO; Metallic reflector comprises: Ni/Ag or Ag/Cu.
It is substrate that the utility model adopts conduction and good metal or the metal alloy of heat conductivility, comprises metallic copper, copper alloy, aluminium alloy, silver, nickel or nickel/copper.Also can adopt silicon substrate, its thickness of substrate is 10 μ m-300 μ m.
Metal bonding layer on the utility model metal substrate and the epitaxial wafer comprises Ni/Au, Ti/Cu, Ti/Au or Au/Sn, perhaps both combinations arbitrarily.
It is dielectric material silicon dioxide (SiO2) or silicon nitride (Si that the utility model embeds the photonic quasi-crystal material
3N
4); Adopt 8 heavy or 12 heavy two-dimentional photonic quasi-crystal structures, lattice constant 300-700nm, the height 50nm-150nm of photonic quasi-crystal.The photonic quasi-crystal structure places the inside of n type semiconductor layer.
The utility model two dimension photonic quasi-crystal structure has long-range order but the short distance randomness.Through optimizing photonic quasi-crystal the structure distance, the size and the degree of depth (highly) of figure of contiguous figure, can further promote light extraction efficiency.
The utility model N type Ohm contact electrode comprises Ti/Al, Ti/Au, Cr/Au or Ti/AI/Ti/Au; P type Ohm contact electrode comprises Ti/Au, Ni/Au or Cr/Au.
The utility model passivation protection layer comprises silicon dioxide (SiO
2) or silicon nitride (Si
3N
4).Its thickness is 100nm-600nm.
The utility model is applicable to the manufacturing of III-V family, II-IV family, III group-III nitride semiconductor luminescent material system light-emitting diode, especially is fit to the manufacturing of GaN based light-emitting diode.
The utility model has the advantages that:
1) fully combines to embed the advantage that photonic quasi-crystal structure, transversal epitaxial growth technology, metal substrate and vertical stratification design; Improved light extraction efficiency, reduction epitaxial wafer dislocation density (improving the epitaxial wafer quality) greatly, realized that electric current evenly distributes; Reduce thermal resistance; Effectively improve heat dispersion, a kind of method that realizes high brightness, high-power LED chip is provided.
2) electrode can be made on whole plane.
3) the utility model provides a kind of high-power and high-luminance light-emitting diode chip for backlight unit manufacturing process, has the advantages that production cost is low, efficient, be fit to extensiveization manufacturing.
4) light-emitting diode made of the utility model have that brightness height, power are big, the distinguishing feature of even, the luminous uniformity of far field illumination, light extraction efficiency height, perfect heat-dissipating (thermal resistance is low), low cost of manufacture.
5) the utility model is not only applicable to GaN base blue light, green glow and white light is high-power and high-brightness LED, also is applicable to the manufacturing of other wavelength, other material system (III-V, II-IV) light-emitting diode and Organic Light Emitting Diode.
6) the utility model embeds the photonic quasi-crystal structure and not only can effectively improve and get optical efficiency, avoids the defective of surperficial photonic quasi-crystal LED structure, and, ins conjunction with transversal epitaxial growth technology, can effectively reduce the epitaxial wafer dislocation density, the quality of raising epitaxial wafer.
6) the utility model solves simultaneously the problem that optical efficiency and high efficiency and heat radiation are got in the raising of led chip effectively, for the exploitation of power type high brightness LED provides a kind of effective solution.
7) the utility model not only overcomes the defective of surperficial photonic crystal LED, but also combines to receive the advantage of patterned substrate (NPS), transversal epitaxial growth technology and surperficial photonic quasi-crystal LED.
Description of drawings
Fig. 1 is a kind of high-power and high-luminance LED chip construction of the utility model sketch map.
Fig. 2 is a kind of high-power and high-luminance light-emitting diode chip for backlight unit of the utility model manufacturing technology steps figure.
Fig. 3 is that 1 one kinds of high-power and high-luminance light-emitting diode chip for backlight unit of the embodiment-metal substrate vertical stratification of the utility model embeds photonic quasi-crystal GaN base light emitting diode chip structural representation.
Fig. 4 A-Fig. 4 k is that 1 one kinds of high-power and high-luminance light-emitting diode chip for backlight unit of the utility model embodiment-metal substrate vertical stratification embeds photonic quasi-crystal GaN base light emitting diode chip schematic diagram of fabrication technology.
Fig. 5 A-Fig. 5 E adopts soft ultraviolet nanometer impression and plasma etching (ICP) technology on n type semiconductor layer, to produce photonic quasi-crystal structural manufacturing process sketch map.
Fig. 6 is the utility model embodiment 1 photonic quasi-crystal structural representation.
Fig. 7 is the structural representation of the utility model embodiment 2.
Fig. 8 is the utility model embodiment 2 photonic quasi-crystal structural representations.
Fig. 9 is the patterned electrodes structural representation.
Among the figure: 1. metal substrate, 2 epitaxial wafers, 3. passivation protection layer, 101.P type Ohm contact electrode, 102. shift metal substrate; 103. metal bonding layer I, 201. metal bonding layer II, 202. metallic reflectors, 203. current expansion and P type ohmic contact layer; 204.P type semiconductor layer, 205. luminescent layers, 206.N type semiconductor layer, 207. nanometer medium posts; 208.N the type Ohm contact electrode, 211. resilient coatings, 212. nucleating layers, 213. Sapphire Substrate; 501. silicon dioxide dielectric layers, 502. resists, 511. residual resists, 514. photonic quasi-crystal structures.
Embodiment
Below in conjunction with accompanying drawing and embodiment the utility model is done further to describe in detail.
A kind of high-power and high-luminance light-emitting diode chip for backlight unit is that the vertical stratification metal substrate embeds photonic quasi-crystal LED chip construction sketch map referring to Fig. 1; Mainly by metal substrate 1; Be provided with the epitaxial wafer 2 of the LED that embeds the photonic quasi-crystal structure on the metal substrate 1, passivation protection layer 3 three part that embed LED epitaxial wafer 2 both sides of photonic quasi-crystal structure are formed.Metal substrate 1 comprises undermost P type Ohm contact electrode 101, middle transfer metal substrate 102, and shifts the metal bonding layer I103 (this layer forms shared relation with the metal bonding layer II201 bonding of epitaxial wafer 2) on the metal substrate 102.LED epitaxial wafer 2 bottom-up being followed successively by of the embedding photonic quasi-crystal structure on the metal substrate 1: metal bonding layer II201, metallic reflector 202; Current expansion and P type ohmic contact layer 203; P type semiconductor layer 204; Luminescent layer 205; Embed photonic quasi-crystal structure n type semiconductor layer 206; The photonic quasi-crystal structure nano medium post 207 that embeds in the n type semiconductor layer 206; N type Ohm contact electrode 208.Passivation protection layer 3 is positioned at the both sides that embed photonic quasi-crystal structure extension sheet 2 on the metal substrate 1.
A kind of high-power and high-luminance light-emitting diode chip for backlight unit vertical stratification metal substrate embeds photonic quasi-crystal led chip manufacturing technology steps referring to Fig. 2, comprising: (1) embeds the manufacturing of photonic quasi-crystal structure LED epitaxial wafer; (2) metal substrate manufacturing; (3) bonding of embedding photonic quasi-crystal structure LED epitaxial wafer and metal substrate; (4) peel off original interim substrate on the embedding photonic quasi-crystal structure LED epitaxial wafer; (5) remove original nucleating layer of epitaxial wafer and resilient coating; (6) attenuate has the n type semiconductor layer that embeds the photonic quasi-crystal structure; (7) making of N type and P type Ohm contact electrode; (8) the passivation protection layer is made.
Embodiment 1
With metallic copper (Cu) is metal substrate 1, and it is embodiment 1 that vertical stratification GaN base embeds photonic quasi-crystal LED, and its concrete structural representation is as shown in Figure 3.Metal substrate 1 vertical stratification GaN base embeds photonic quasi-crystal LED and comprises successively from bottom to top: the P type Ohm contact electrode 101 of Ti/Au; Metal Cu shifts metal substrate 102; Ti/Cu material metal bonded layer I103 and metal bonding layer II201; The metallic reflector 202 of Ni/Ag; The current expansion of Ni/Au and P type ohmic contact layer 203; The p type semiconductor layer 204 of P-GaN; 5 layers of InGaN/GaN MQW (MQW) luminescent layer 205; The embedding photonic quasi-crystal structure n type semiconductor layer 206 of N-GaN; The photonic quasi-crystal structure SiO that embeds in the n type semiconductor layer 206
2Nanometer medium post 207; The N type Ohm contact electrode 208 of Cr/Au; SiO
2 Passivation protection layer 3.
The present embodiment 1 concrete method of making:
In Fig. 4 A-Fig. 4 K, Fig. 5 A-Fig. 5 E, Fig. 6
A kind of high-power and high-luminance light-emitting diode chip for backlight unit of the utility model schematic diagram of fabrication technology, concrete processing step is following:
1) embedding photonic quasi-crystal structure LED epitaxial wafer makes
(a) grow into stratum nucleare, resilient coating, n type semiconductor layer
Like Fig. 4 A, substrate is inserted MOCVD, go up growth 50nm GaN nucleating layer 212, the 2 μ m GaN resilient coatings 211 that do not mix of on nucleating layer 212, growing in Sapphire Substrate 213 (the interim substrate of epitaxial wafer); The n type semiconductor layer 206 of growth 1 μ m N-GaN on resilient coating 211.
(b) make the photonic quasi-crystal structure
Like Fig. 4 B, at first, from MOCVD, take out Sapphire Substrate 213, deposition 100nm silicon dioxide dielectric layers on n type semiconductor layer 206 with nucleating layer 212, resilient coating 211 and n type semiconductor layer 206; Subsequently, adopt soft ultraviolet nanometer impression and plasma etch process on dielectric layer, to make photonic quasi-crystal structure nano medium post 207; At last, remove resist and cleaning, to remove the dirt and the oxide on dielectric layer surface.
Fig. 5 A-Fig. 5 E, shown in Figure 6 is to adopt soft ultraviolet nanometer impression and plasma etching (ICP) technology on n type semiconductor layer 206, to produce photonic quasi-crystal structural manufacturing process sketch map.
Fig. 5 A is a deposition 100nm thick silicon dioxide dielectric layer 501 on n type semiconductor layer 206, then on silicon dioxide dielectric layers 501 surfaces again Rotating with Uniform be coated with the used resist 502 of shop 300nmUV nano impression;
After impressing mould and the Sapphire Substrate 213 that Fig. 5 B has a photonic quasi-crystal structure aligns, press to resist 502, realize that photonic quasi-crystal structure on the mould is to the transfer of resist 502 feature patterns; Subsequently, adopt ultraviolet light from mould back side illuminaton resist 502 materials, behind the exposure curing molding, the demoulding copies photonic quasi-crystal structure 514 behind development, the post bake on resist 502;
Fig. 5 C removes residual resist 511 for using reactive ion etching RIE (Reactive Ion Etching), on resist 502 materials, copies photonic quasi-crystal structure 514;
Fig. 5 D is mask for adopting inductively coupled plasma etching (ICP) technology with the figure on the resist, etching silicon dioxide dielectric layer 501; Photonic quasi-crystal structure 514 on the resist 502 is transferred to silicon dioxide dielectric layers 501;
Fig. 5 E produces photonic quasi-crystal structure 514 for removing resist 502 on silicon dioxide dielectric layers 501.The feature structure of transferring on the silicon dioxide dielectric layers 501 is 12 heavy two-dimentional photonic quasi-crystal structures, the diameter 100nm in hole, fill factor, curve factor 26%, the height 100nm of photonic quasi-crystal.
(c) growth n type semiconductor layer, luminescent layer, p type semiconductor layer
Like Fig. 4 C; The Sapphire Substrate 213 that will have photonic quasi-crystal structure nano medium post 207 is inserted MOCVD again; Adopt the n type semiconductor layer 206 of transversal epitaxial growth technology continued growth 1 μ m N-GaN; Growing InGaN on the n type semiconductor layer 206 of N-GaN/GaN5 layer is the mqw light emitting layer 205 of 70nm altogether, the p type semiconductor layer 204 of the P-GaN of 200nm.
(d) deposition current expansion and P type ohmic contact layer 203 and metallic reflector 202
Like Fig. 4 D, adopt electron beam evaporation process on p type semiconductor layer 204, to deposit the metallic reflector 202 of 50nm Ni/Au current expansion and P type ohmic contact layer 203,100nmNi/Ag.
(e) splash-proofing sputtering metal bonded layer II
Like Fig. 4 E, through the metal bonding layer II201 of magnetron sputtering sputter 20nm Ti and 200nm Au on metallic reflector.
2) manufacturing of metal substrate
With copper (Cu) is substrate 102, adopts the magnetron sputtering technique Ti/Au metal bonding layer I103 of sputter 20nm/200nm above that.
3) bonding of epitaxial wafer and metal substrate
Shown in Fig. 4 F, adopt the metal melting bonding technology, epitaxial wafer is transferred on the metal substrate.Be bonded interface with Ti/Au metal bonding layer II201 on the epitaxial wafer and the Ti/Au metal bonding layer I103 on the Cu substrate respectively.
4) peel off original interim substrate (Sapphire Substrate 213) on the epitaxial wafer 2
Shown in Fig. 4 G, adopt laser lift-off (Laser Lift-Off, abbreviation LLO) to remove the Sapphire Substrate 213 of epitaxial wafer 2.
5) nucleating layer 212 and resilient coating 211 on the removal epitaxial wafer 2
Shown in Fig. 4 H, adopt methods such as wafer reduction process or chemico-mechanical polishing to remove original GaN nucleating layer 212 and resilient coating 211 on the epitaxial wafer 2.
6) attenuate has the n type semiconductor layer 206 that embeds the photonic quasi-crystal structure.
Shown in Fig. 4 I, adopt method attenuates such as wafer reduction process or chemico-mechanical polishing to have the n type semiconductor layer 206 that embeds the photonic quasi-crystal structure, the thickness 600nm of attenuate.
7) making of N type and P type Ohm contact electrode
Shown in Fig. 4 J, be N type Ohm contact electrode 208 with Cr/Au, Ti/Au is a P type Ohm contact electrode 101.Adopt the method for electron beam evaporation to make N type Ohm contact electrode 208, thickness of electrode 400nm.Adopt the method for photoetching and electron beam evaporation to make P type Ohm contact electrode 101, thickness of electrode 200nm.
8) the passivation protection layer is made
Shown in Fig. 4 K, with SiO
2Be the passivation protection layer material, utilize plasma activated chemical vapour deposition in metal substrate 1, on epitaxial wafer both sides depositions 200nm passivation protection layer 3.
Embodiment 2
Like Fig. 7, shown in Figure 8, present embodiment is similar with embodiment 1, and its difference is: substrate 102 is copper alloys; The current extending of ITO and P type ohmic contact layer 203; The metallic reflector 202 of Ag/Cu; Silicon nitride (Si
3N
4) passivation protection layer 3.The feature structure of the photonic quasi-crystal structure that embeds in the n type semiconductor layer 206 is the average diameter 80nm of 12 heavy sunflower types two dimension photonic quasi-crystal structure 514 airports, and the hole heart distance of contiguous airport is about 200nm, the height 120nm of photonic quasi-crystal.
Among Fig. 9, in order to improve electrology characteristic, it is congested to improve electric current.The realization CURRENT DISTRIBUTION is even, increases lighting area, and exiting surface N type Ohm contact electrode 208 can adopt the patterned electrodes structure.
In addition, those skilled in the art also can do other variation in the utility model spirit.Certainly, these all should be included in the utility model scope required for protection according to the variation that the utility model spirit is done.
Claims (5)
1. a high-power and high-luminance light-emitting diode chip for backlight unit is characterized in that, comprising: a metal substrate, on metal substrate, be provided with the LED epitaxial wafer that embeds the photonic quasi-crystal structure, and the epitaxial wafer both sides are provided with the passivation protection layer; Said epitaxial wafer is bottom-up to be provided with successively: the n type semiconductor layer of metal bonding layer, metallic reflector, current expansion and P type ohmic contact layer, p type semiconductor layer, luminescent layer, embedding photonic quasi-crystal structure, N type Ohm contact electrode.
2. high-power and high-luminance light-emitting diode chip for backlight unit as claimed in claim 1 is characterized in that, the n type semiconductor layer of described embedding photonic quasi-crystal structure, and its N type semiconductor layer thickness is 300nm-1500nm; Embedding the photonic quasi-crystal material is dielectric material silicon dioxide or silicon nitride; Adopt 8 heavy or 12 heavy two-dimentional photonic quasi-crystal structures, lattice constant 300-700nm, the height 50nm-150nm of photonic quasi-crystal, the photonic quasi-crystal structure places the inside of n type semiconductor layer.
3. high-power and high-luminance light-emitting diode chip for backlight unit as claimed in claim 1; It is characterized in that; Said metal substrate comprises orlop P type Ohm contact electrode; Middle for shifting metal substrate and shifting the metal bonding layer on the metal substrate, said metal bonding layer is included in the metal bonding layer I that shifts the metal substrate sputter, the metal bonding layer II of sputter on the metallic reflector in epitaxial wafer; Shift metal substrate and pass through metal bonding layer I, metal bonding layer II bonding with metallic reflector, the transfer metal substrate is a kind of in copper, copper alloy, aluminium alloy, silver, nickel or the nickel/copper; Or be silicon substrate; P type Ohm contact electrode is any one of Ti/Au, Ni/Au or Cr/Au, thickness 100nm-400nm.
4. high-power and high-luminance light-emitting diode chip for backlight unit as claimed in claim 1 is characterized in that, said luminescent layer is multi-layer quantum well structure, double-heterostructure, multiple layer hetero quantum point structure or multi-layer quantum line, and its thickness is 50mm-200nm.
5. high-power and high-luminance light-emitting diode chip for backlight unit as claimed in claim 1 is characterized in that, said N type Ohm contact electrode is any one of Ti/Al, Ti/Au, Cr/Au or Ti/AI/Ti/Au, thickness 100-400nm; Said passivation protection layer is silicon dioxide or silicon nitride, and thickness is 100nm-600nm.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102290513A (en) * | 2011-09-14 | 2011-12-21 | 青岛理工大学 | Large-power high-brightness light-emitting diode (LED) chip and production method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102290513A (en) * | 2011-09-14 | 2011-12-21 | 青岛理工大学 | Large-power high-brightness light-emitting diode (LED) chip and production method thereof |
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