CN101789475A - Photonic crystal light-emitting diode and manufacturing method thereof - Google Patents
Photonic crystal light-emitting diode and manufacturing method thereof Download PDFInfo
- Publication number
- CN101789475A CN101789475A CN201010101417A CN201010101417A CN101789475A CN 101789475 A CN101789475 A CN 101789475A CN 201010101417 A CN201010101417 A CN 201010101417A CN 201010101417 A CN201010101417 A CN 201010101417A CN 101789475 A CN101789475 A CN 101789475A
- Authority
- CN
- China
- Prior art keywords
- type doping
- doping semiconductor
- semiconductor layer
- layer
- photonic crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The invention claims a photonic crystal light-emitting diode and a manufacturing method thereof. The manufacturing method of the photonic crystal light-emitting diode comprises the following steps of: covering one-dimensional photonic crystals on the convex body parts of a transparent conductive layer, a p-type doping semiconductor layer and an active light-emitting layer, and arranging the two-dimensional photonic crystal, the upper side of which is close to the active light-emitting layer, inside the n-type doping semiconductor layer; etching the n-type doping semiconductor material, depositing the low refractive index material and arranging the two-dimensional photonic crystal in the n-type doping semiconductor layer; continuing the growing of the active light-emitting layer and the p-type doping semiconductor material, etching and uncovering the top surface of the n-type doping semiconductor layer, evaporating the transparent conductive layer on the surface of the convex body, covering the one-dimensional photonic crystal on the convex body parts of the transverse conductive layer, the p-type doping semiconductor layer and the active light-emitting layer. By adopting the omni-directional reflection characteristic of the one-dimensional photonic crystal and the bandgap effect of the two-dimensional photonic crystal, the positions of the one-dimensional photonic crystal and the two-dimensional photonic crystal are designed in the light-emitting diode, the direction distribution of the emitted light is improved, thereby more emitted lights are shot out along the direction perpendicular to the base bottom, and the light emitting efficiency is improved.
Description
Technical field
The present invention relates to a kind of semiconductor light-emitting-diode and preparation method thereof, specifically, is a kind of photonic crystal light-emitting diode that utilizes photonic crystal raising light extraction efficiency and preparation method thereof.
Background technology
In common GaN based light-emitting diode structure, because the refractive index difference between air, epitaxial film materials (comprising luminescent layer) and the backing material, the three all has total reflection phenomenon to occur in twos between the interface, therefore, the light of luminescent layer emission can be divided into three parts: 6% light enters air (if place a speculum at the Sapphire Substrate back side, amount of light can double again) through the upper surface emission; 22% light is subjected to the total reflection effect to be confined to propagate in the Sapphire Substrate, claims that this part light is foundation light (substrate light); Be subjected to the effect of dual total reflection, 66% light is trapped in the GaN epitaxial material layer, claims that this part light is leaded light (guided light).As can be seen, most light of light-emitting diode are propagated at device inside with the guided wave modular form, therefore how to take effective and efficient manner to make this part light escape out, are the key points that light-emitting diode solid-state illumination light source obtains applying.
Photonic crystal is refractive index becomes period profile on the yardstick of optical wavelength a kind of structural material, it not only can be used for increasing substantially the light extraction efficiency of light-emitting diode, but also the space luminescence distribution of control device well is used for the projection display, module backlight and auto bulb etc. have specific demand to light distribution light source.According to the difference of its dielectric coefficient periodic arrangement, photonic crystal can be divided into: the structure of one dimension (1D), two dimension (2D) and three-dimensional (3D).In photonic crystal,, dielectric constant is similar to the such periodicity potential field of semiconductor crystal because in the cyclic variation in space, also existing.When big and period of change was with light wavelength comparability plan when the amplitude of variation of dielectric constant, the Bragg diffraction of medium also can produce band gap.Its effect mainly shows: frequency drops on the propagation that is under an embargo of photon in the scope of forbidden band.If integrated photon crystal structure on the light-emitting diode, when the frequency of lumination of light emitting diode drops in the forbidden band frequency of photonic crystal, guided wave mode will directly be coupled into the radiation mode in the free space, and the efficient of extracting light in theory can be near 100%.On the other hand, if glow frequency is positioned on the photonic crystal band frequency, photonic crystal can make these Mode Coupling become radiation mode by Bragg diffraction.
Existing GaN based light-emitting diode structure than high light-emitting efficiency mainly contains following three kinds, and a kind of is the thin-film led structure of surface coarsening; Other two kinds is respectively the light emitting diode construction that photonic crystal is positioned at p type and n type GaN top layer.The manufacture method of the thin-film led structure of surface coarsening need be peeled off and alligatoring is carried out on p type GaN top layer substrate.In like manner photonic crystal is positioned at the GaN based light-emitting diode structure on n type GaN top layer, also needs substrate is peeled off, and mainly reaches the purpose that improves light extraction efficiency based on the Bragg diffraction effect of utilizing photonic crystal.
Utilizing photon crystal structure to improve in the research of GaN based light-emitting diode light extraction efficiency, photonic crystal mainly is positioned at the top layer of p type GaN.Because the photonic crystal that on p type GaN top layer, forms, the ohmic contact characteristic of meeting degeneration p type GaN layer and metal, in addition, the thickness of p type GaN layer is owing to be subjected to the control of crystalline quality (doping complexity), be generally less than 200nm, and the injury to active luminescent layer that etching causes when preventing to generate photonic crystal, the thickness of photonic crystal is usually less than the thickness of p type GaN layer, and the optimum thickness of photon crystal structure should be and makes the half-wavelength (blue light wavelength is 450nm-480nm) of using up.
Summary of the invention
The problem to be solved in the present invention is by 1-D photon crystal and 2 D photon crystal are set, and changes the outgoing direction of light reaching the purpose that improves light extraction efficiency, and a kind of photonic crystal light-emitting diode and preparation method thereof is provided.
Realize a kind of photonic crystal light-emitting diode of the present invention, comprise substrate; N type doping semiconductor layer includes 2 D photon crystal at an upper portion thereof; Active luminescent layer is arranged on the n type doping semiconductor layer; P type doping semiconductor layer is arranged on this activity luminescent layer; Transparency conducting layer is arranged on the p type doping semiconductor layer; 1-D photon crystal is arranged on the transparency conducting layer; It is characterized in that: 1-D photon crystal is the convex body part that is wrapped in transparency conducting layer, p type doping semiconductor layer and active luminescent layer, and 2 D photon crystal is to be positioned at the position of n type doping semiconductor layer top near active luminescent layer.
In the technical scheme of the above-mentioned photonic crystal light-emitting diode of the present invention, the distance that described 2 D photon crystal is positioned at active luminescent layer is 50-1000nm; Can further elect 100-300nm as; Described 2 D photon crystal constitutes by the high-index material of material as a setting with as the low-index material of diffuser material, high-index material is a n type doped semiconductor layer material, low-index material is the dielectric material of dielectric constant between 0-2.4, and it is cube and arranges or hexagonal array in n type doping semiconductor layer; The parameter that the low-index material cube of described 2 D photon crystal is arranged is: lattice constant a:220-235nm, aperture d:118-127nm, the degree of depth: 100-250nm; The parameter of the low-index material hexagonal array of described 2 D photon crystal is: lattice constant a:168-200nm, aperture d:100-120nm, the degree of depth: 100-250nm; Described 1-D photon crystal is that low-index material and high-index material alternate plating constitute, and described low-index material is SiO
2Described high-index material is TiO
2, Ta
2O
5Or ZrO
2The lattice constant a value of described 1-D photon crystal is 120-150nm; The rete periodicity n of described 1-D photon crystal is between 5-50; Described substrate is sapphire, carborundum or gallium nitride material; The matrix of n type doping semiconductor layer and p type doping semiconductor layer is a gallium nitride material.
Implement the preparation method of the above-mentioned a kind of photonic crystal light-emitting diode of the present invention, its concrete grammar is to follow these steps to carry out:
(1) on base material, carries out the growth of n type doping semiconductor layer with metallochemistry organic vapor phase deposition device;
(2) on n type doping semiconductor layer, adopt mask method,, etch the cylindrical structure of the two-dimensional and periodic distribution that is cube or hexagon arrangement with inductively coupled plasma device, electron cyclotron resonace device or reactive ion etching device;
(3) use the plasma enhanced chemical vapor deposition device, the material of the different low-ks of deposition is finished the preparation of two-dimensional photon crystal structure in cylindrical structure;
(4) structure that above-mentioned steps generated is inserted in the metallochemistry organic vapor phase deposition device again, continued the growth of n type doping semiconductor layer;
(5) on the basis in above-mentioned (4) step, carry out the growth of active luminescent layer and p type doping semiconductor layer;
(6) adopt inductively coupled plasma device, electron cyclotron resonace device or reactive ion etching device, etch away active luminescent layer of part and part p type doping semiconductor layer, expose n type doping semiconductor layer, form mesa structure;
(7) adopt mask method, deposited by electron beam evaporation platform, evaporation transparency conducting layer on p type doping semiconductor layer;
(8) adopt mask method, use the plasma enhanced chemical vapor deposition device, partly wrap up 1-D photon crystal at the convex body of transparency conducting layer, p type doping semiconductor layer and active luminescent layer;
(9) adopt mask method to carry out photoetching and wet etching to the 1-D photon crystal layer, expose transparency conducting layer, and deposited by electron beam evaporation platform evaporation p type electrode at an upper portion thereof;
(10) on the table top of n type doping semiconductor layer, use photoetching and electron beam evaporation platform evaporating n type electrode.
The technical scheme of the above-mentioned light-emitting diode of the present invention has 1-D photon crystal structure and two-dimensional photon crystal structure.2 D photon crystal is positioned at n type GaN layer, keeps nearer distance with active luminescent layer.The light wave of the directive 2 D photon crystal that active luminescent layer sends is owing to propagating (forbidden photon band effect) in the plane that is inhibited in 2 D photon crystal, the energy of light is redistributed, more light-wave energy has overcome the influence of total reflection phenomenon by penetrating with the direction perpendicular to substrate behind the 2 D photon crystal.The light that the active luminescent layer of penetrating to p type GaN layer sends is subjected to the comprehensive reflex of 1-D photon crystal, and total reflection takes place, and penetrates to the substrate direction, through the effect effect of the forbidden band of 2 D photon crystal, penetrates with the direction perpendicular to substrate.Therefore the photonic crystal light-emitting diode of this structure can obviously improve light extraction efficiency and improve direction of light and distribute.
The preparation method of the above-mentioned light-emitting diode of the present invention is by being coated on 1-D photon crystal on the convex body of transparency conducting layer, p type doping semiconductor layer and active luminescent layer; With 2 D photon crystal is the position that is arranged at the close active luminescent layer in top in the n type doping semiconductor layer, and the photonic crystal that makes has changed the outgoing direction of light, reaches and improved the efficient of bright dipping, and the inventive method step is simple and direct, and operation easily realizes.
Compare with the photonic crystal that forms on the p type GaN top layer, this photonic crystal light-emitting diode structure adopts the substrate light-emitting directions, has effectively increased lighting area; Compare with the thin-film led structure of alligatoring, this photonic crystal light-emitting diode structure save to substrate peel off and to the roughening process on p type GaN top layer.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is a 1-D photon crystal cross section structure schematic diagram of the present invention;
Fig. 3 is the planar structure schematic diagram that 2 D photon crystal cube of the present invention is arranged;
Fig. 4 is the planar structure schematic diagram of 2 D photon crystal hexagonal array of the present invention.
Among the figure: 101: substrate; 102:n type doping semiconductor layer; 103: 2 D photon crystal; 104: active luminescent layer; The 105:p type semiconductor layer; 106: transparency conducting layer; 107: 1-D photon crystal; 108:p type electrode; 109:n type electrode; L: the low-index material of 1-D photon crystal; H: the high-index material of 1-D photon crystal; A: lattice constant; D: aperture; 110: the low-index material of 2 D photon crystal.
Embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is made further detailed description, those skilled in the art is after having read this embodiment, can realize technical solutions according to the invention, advantage of the present invention and good effect also simultaneously can access embodiment.
Embodiment 1
As Fig. 1, Fig. 2, Fig. 3 and Fig. 4, the structure of a kind of photonic crystal light-emitting diode of the invention process is as follows:
Embodiment 2
As Fig. 1, Fig. 2, Fig. 3 and Fig. 4, the manufacture method of a kind of photonic crystal light-emitting diode of the invention process is as follows:
The first step in metallochemistry organic vapor phase deposition device, is carried out hydrogenation treatment to substrate, growing low temperature forming core layer, the n type GaN layer that continued growth 2 μ m are thick after the heat treatment.Base material is a sapphire.
Second step, on the n type GaN layer of having grown, adopt mask method, with inductively coupled plasma device or electron cyclotron resonace device or reactive ion etching device, etch the cylindrical structure of the two-dimensional and periodic distribution that is the cube arrangement, lattice constant is a:225nm, and the aperture is b:121nm, the degree of depth is: 200nm
The 3rd step, use plasma enhanced chemical vapor deposition, deposition of silica material in cylindrical structure is finished the preparation of two-dimensional photon crystal structure.
The 4th step, the structure that above-mentioned steps generated is inserted in the metallochemistry organic vapor phase deposition device again, continue the growth of n type GaN layer, growth thickness is about 50-1000nm.Its concrete numerical value keeps the shortest down with the growth quality that does not influence active luminescent layer.
The 5th step, on the 4th rapid step by step basis, carry out the growth of active luminescent layer and p type GaN layer, the main peak value optical wavelength that active luminescent layer sends is at 460nm.
The 6th step, adopt the inductively coupled plasma device, etch away active luminescent layer of part and p type GaN layer, expose n type GaN layer, form mesa structure.
The 7th step, adopt mask method, the deposited by electron beam evaporation platform, evaporation tin indium oxide producing transparent conductive layer on p type GaN layer, thickness is about 200nm.
The 8th step, adopt mask method, use the plasma enhanced chemical vapor deposition device, partly wrap up 1-D photon crystal at the convex body of tin indium oxide, p type GaN layer and active luminescent layer.1-D photon crystal is selected the material of silicon dioxide and two kinds of differing dielectric constants of titanium dioxide for use, and alternating deposit is periodic distribution successively.Low-index material SiO
2(refractive index 1.46), high-index material TiO
2(refractive index 2.5), in order to obtain best reflecting effect, lattice constant a value is 127nm.Low-index material SiO
2Bed thickness 80nm, high-index material TiO
2Bed thickness 47nm.Rete periodicity n is 14.
The 9th step, adopt mask method to carry out photoetching and wet etching (HF solution) to the 1-D photon crystal layer, expose indium tin oxide layer, make p type electrode above it.
In the tenth step, on the mesa structure of GaN based light-emitting diode, produce n type electrode with photoetching and electron beam evaporation.
According to above-mentioned embodiment, those skilled in the art are in conjunction with prior art, can realize a kind of photonic crystal light-emitting diode of the present invention and preparation method thereof, other technology contents that relates in this manual and technical term are understood and enforcement with passing through with technological means according to the common practise of this area, also can the enforcement technical solutions according to the invention be set by rational analysis ratiocination.
Claims (10)
1. photonic crystal light-emitting diode, it contains:
-substrate (101);
-n type doping semiconductor layer (102) includes 2 D photon crystal (103) at an upper portion thereof;
-active luminescent layer (104) is arranged on the n type doping semiconductor layer (102);
-p type doping semiconductor layer (105) is arranged on this activity luminescent layer (104);
-transparency conducting layer (106) is arranged on the p type doping semiconductor layer (105);
-1-D photon crystal (107) is arranged on the transparency conducting layer (106);
-it is characterized in that: 1-D photon crystal (107) is the convex body part that is wrapped in transparency conducting layer (106), p type doping semiconductor layer (105) and active luminescent layer (104), and 2 D photon crystal (103) is to be positioned at the position of n type doping semiconductor layer (102) top near active luminescent layer (104).
2. photonic crystal light-emitting diode as claimed in claim 1, the distance that its described 2 D photon crystal (103) is positioned at active luminescent layer (104) is 50-1000nm; Can further elect 100-300nm as.
3. photonic crystal light-emitting diode as claimed in claim 1, its described 2 D photon crystal (103) constitutes by the high-index material of material as a setting with as the low-index material of diffuser material, high-index material is n type doping semiconductor layer (a 102) material, low-index material (110) is the dielectric material of dielectric constant between 0-2.4, and it is cube and arranges or hexagonal array in n type doping semiconductor layer (102).
4. photonic crystal light-emitting diode as claimed in claim 3, the parameter that low-index material (110) cube of its described 2 D photon crystal (103) is arranged is: lattice constant a:220-235nm, aperture d:118-127nm, the degree of depth: 100-250nm.
5. photonic crystal light-emitting diode as claimed in claim 3, the parameter of low-index material (110) hexagonal array of its described 2 D photon crystal (103) is: lattice constant a:168-200nm, aperture d:100-120nm, the degree of depth: 100-250nm.
6. photonic crystal light-emitting diode as claimed in claim 1, its described 1-D photon crystal (107) are that low-index material and high-index material alternate plating constitute, and described low-index material is SiO
2Described high-index material is TiO
2, Ta
2O
5Or ZrO
2
7. photonic crystal light-emitting diode as claimed in claim 6, the lattice constant a value of its described 1-D photon crystal (107) is 120-150nm.
8. photonic crystal light-emitting diode as claimed in claim 6, the rete periodicity n of its described 1-D photon crystal (107) is between 5-50.
9. photonic crystal light-emitting diode as claimed in claim 1, its described substrate (101) is sapphire, carborundum or gallium nitride material; The matrix of n type doping semiconductor layer (102) and p type doping semiconductor layer (104) is a gallium nitride material.
10. preparation method who is used for the described photonic crystal light-emitting diode of claim 1, its concrete grammar is to follow these steps to carry out:
(1) on substrate (101) material, carries out the growth of n type doping semiconductor layer (102) with metallochemistry organic vapor phase deposition device;
(2) go up the employing mask method at n type doping semiconductor layer (102),, etch the cylindrical structure of the two-dimensional and periodic distribution that is cube or hexagon arrangement with inductively coupled plasma device, electron cyclotron resonace device or reactive ion etching device;
(3) use the plasma enhanced chemical vapor deposition device, the material of the different low-ks of deposition is finished the preparation of 2 D photon crystal (103) structure in cylindrical structure;
(4) structure that above-mentioned steps generated is inserted in the metallochemistry organic vapor phase deposition device again, continued the growth of n type doping semiconductor layer (102);
(5) on the basis in above-mentioned (4) step, carry out the growth of active luminescent layer (104) and p type doping semiconductor layer (105);
(6) adopt inductively coupled plasma device, electron cyclotron resonace device or reactive ion etching device, etch away active luminescent layer (104) of part and part p type doping semiconductor layer (105), expose n type doping semiconductor layer (102), form mesa structure;
(7) adopt mask method, the deposited by electron beam evaporation platform is gone up evaporation transparency conducting layer (106) at p type doping semiconductor layer (105);
(8) adopt mask method, use the plasma enhanced chemical vapor deposition device, partly wrap up 1-D photon crystal (107) at the convex body of transparency conducting layer (106), p type doping semiconductor layer (105) and active luminescent layer (104);
(9) adopt a mask method to carry out photoetching and wet etching to 1-D photon crystal (107) layer, expose transparency conducting layer (106), and deposited by electron beam evaporation platform evaporation p type electrode (108) at an upper portion thereof;
(10) on the table top of n type doping semiconductor layer (102), use photoetching and electron beam evaporation platform evaporating n type electrode (109).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010101417A CN101789475A (en) | 2010-01-21 | 2010-01-21 | Photonic crystal light-emitting diode and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010101417A CN101789475A (en) | 2010-01-21 | 2010-01-21 | Photonic crystal light-emitting diode and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101789475A true CN101789475A (en) | 2010-07-28 |
Family
ID=42532610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010101417A Pending CN101789475A (en) | 2010-01-21 | 2010-01-21 | Photonic crystal light-emitting diode and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101789475A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102646762A (en) * | 2011-02-21 | 2012-08-22 | 隆达电子股份有限公司 | Patterning method of transparent conductive layer of light emitting diode |
| CN103094436A (en) * | 2013-01-18 | 2013-05-08 | 河南科技大学 | Novel light emitting diode based on photonic crystal |
| CN103187503A (en) * | 2012-11-22 | 2013-07-03 | 安徽师范大学 | Efficient light-emitting diode containing metal photonic crystal |
| CN103824921A (en) * | 2011-12-31 | 2014-05-28 | 聚灿光电科技(苏州)有限公司 | Blue LED chip with high light emission efficiency |
| CN103855267A (en) * | 2014-03-07 | 2014-06-11 | 太原理工大学 | LED light-emitting component based on photonic crystal reflector |
| WO2016019860A1 (en) * | 2014-08-08 | 2016-02-11 | 映瑞光电科技(上海)有限公司 | Vertical led chip structure and manufacturing method therefor |
| CN107134516A (en) * | 2017-06-21 | 2017-09-05 | 海迪科（南通）光电科技有限公司 | A kind of novel light-emitting light source |
| CN108511572A (en) * | 2017-02-23 | 2018-09-07 | 海迪科（南通）光电科技有限公司 | A kind of light emitting diode with photon crystal structure |
-
2010
- 2010-01-21 CN CN201010101417A patent/CN101789475A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102646762A (en) * | 2011-02-21 | 2012-08-22 | 隆达电子股份有限公司 | Patterning method of transparent conductive layer of light emitting diode |
| CN103824921A (en) * | 2011-12-31 | 2014-05-28 | 聚灿光电科技(苏州)有限公司 | Blue LED chip with high light emission efficiency |
| CN103187503A (en) * | 2012-11-22 | 2013-07-03 | 安徽师范大学 | Efficient light-emitting diode containing metal photonic crystal |
| CN103094436A (en) * | 2013-01-18 | 2013-05-08 | 河南科技大学 | Novel light emitting diode based on photonic crystal |
| CN103855267A (en) * | 2014-03-07 | 2014-06-11 | 太原理工大学 | LED light-emitting component based on photonic crystal reflector |
| WO2016019860A1 (en) * | 2014-08-08 | 2016-02-11 | 映瑞光电科技(上海)有限公司 | Vertical led chip structure and manufacturing method therefor |
| GB2542542A (en) * | 2014-08-08 | 2017-03-22 | Enraytek Optoelectronics Co | Vertical LED chip structure and manufacturing method therefor |
| GB2542542B (en) * | 2014-08-08 | 2017-09-20 | Enraytek Optoelectronics Co | Vertical LED chip structure and manufacturing method therefor |
| CN108511572A (en) * | 2017-02-23 | 2018-09-07 | 海迪科（南通）光电科技有限公司 | A kind of light emitting diode with photon crystal structure |
| CN107134516A (en) * | 2017-06-21 | 2017-09-05 | 海迪科（南通）光电科技有限公司 | A kind of novel light-emitting light source |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101789475A (en) | Photonic crystal light-emitting diode and manufacturing method thereof | |
| US9093605B2 (en) | Optoelectronic device and method for manufacturing the same | |
| US9385274B2 (en) | Patterned opto-electrical substrate and method for manufacturing the same | |
| US9166105B2 (en) | Light emitting device | |
| CN100568548C (en) | Semiconductor light-emitting elements and manufacture method thereof | |
| US8344409B2 (en) | Optoelectronic device and method for manufacturing the same | |
| CN103325913B (en) | Light emitting diode with composite transparent conductive layer and preparation method thereof | |
| US20070041214A1 (en) | Rod type light emitting device and method for fabricating the same | |
| US9070827B2 (en) | Optoelectronic device and method for manufacturing the same | |
| CN104966769B (en) | A kind of light emitting diode with quantum dots with two-photon crystal structure | |
| CN102709426A (en) | Manufacture method of GaN (gallium nitride)-based LED (light emitting diode) chip with roughened surface | |
| CN103227258A (en) | Patterned substrate and stacked light emitting diode structure | |
| JPWO2009001596A1 (en) | LIGHT EMITTING ELEMENT AND LIGHTING DEVICE | |
| JP2023175971A (en) | Optoelectronic device with diode array | |
| US8946736B2 (en) | Optoelectronic device and method for manufacturing the same | |
| TW200908374A (en) | Light emitting diode and method for fabricating the same | |
| CN102931308B (en) | Preparation method of light emitting diode with photonic crystals with gradually-changed radius | |
| CN104465925B (en) | Method for manufacturing LED chip epitaxial layer and LED chip structure | |
| CN102751417A (en) | LED (light-emitting diode) tube core with ZnO (zinc oxide)-micron graphic array and preparation method thereof | |
| KR101896038B1 (en) | Organic light emitting device | |
| CN217405451U (en) | Composite patterned substrate and epitaxial structure with air gap | |
| Park et al. | Al2O3/AlN/Al-based backside diffuse reflector for high-brightness 370-nm AlGaN ultraviolet light-emitting diodes | |
| KR20060114920A (en) | Light emitting element and method for manufacturing thereof | |
| KR101844871B1 (en) | Light emitting diodes of enhanced light efficiency and manufacturing method of the same | |
| CN106299085B (en) | A kind of polarized luminescence diode chip for backlight unit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20100728 |