GB2542542B - Vertical LED chip structure and manufacturing method therefor - Google Patents

Vertical LED chip structure and manufacturing method therefor

Info

Publication number
GB2542542B
GB2542542B GB1701184.2A GB201701184A GB2542542B GB 2542542 B GB2542542 B GB 2542542B GB 201701184 A GB201701184 A GB 201701184A GB 2542542 B GB2542542 B GB 2542542B
Authority
GB
United Kingdom
Prior art keywords
manufacturing
led chip
method therefor
chip structure
vertical led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB1701184.2A
Other versions
GB2542542A (en
GB201701184D0 (en
Inventor
Lv Mengyan
Zhang Qiong
Tong Ling
Zhang Yu
Li Qiming
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Enraytek Optoelectronics Co Ltd
Original Assignee
Enraytek Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enraytek Optoelectronics Co Ltd filed Critical Enraytek Optoelectronics Co Ltd
Publication of GB201701184D0 publication Critical patent/GB201701184D0/en
Publication of GB2542542A publication Critical patent/GB2542542A/en
Application granted granted Critical
Publication of GB2542542B publication Critical patent/GB2542542B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
GB1701184.2A 2014-08-08 2015-08-05 Vertical LED chip structure and manufacturing method therefor Expired - Fee Related GB2542542B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410390800.9A CN104134723A (en) 2014-08-08 2014-08-08 Vertical type LED chip structure and manufacturing method thereof
PCT/CN2015/086098 WO2016019860A1 (en) 2014-08-08 2015-08-05 Vertical led chip structure and manufacturing method therefor

Publications (3)

Publication Number Publication Date
GB201701184D0 GB201701184D0 (en) 2017-03-08
GB2542542A GB2542542A (en) 2017-03-22
GB2542542B true GB2542542B (en) 2017-09-20

Family

ID=51807325

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1701184.2A Expired - Fee Related GB2542542B (en) 2014-08-08 2015-08-05 Vertical LED chip structure and manufacturing method therefor

Country Status (4)

Country Link
CN (1) CN104134723A (en)
DE (1) DE112015003673T5 (en)
GB (1) GB2542542B (en)
WO (1) WO2016019860A1 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104134723A (en) * 2014-08-08 2014-11-05 映瑞光电科技(上海)有限公司 Vertical type LED chip structure and manufacturing method thereof
CN104638078B (en) 2015-03-05 2017-05-10 天津三安光电有限公司 Light emitting diode and manufacturing method for same
CN104766912A (en) * 2015-03-30 2015-07-08 映瑞光电科技(上海)有限公司 Vertical-structure LED chip and manufacturing method thereof
CN104733572A (en) * 2015-03-30 2015-06-24 映瑞光电科技(上海)有限公司 Flip led chip and manufacturing method thereof
JP2017050439A (en) * 2015-09-03 2017-03-09 豊田合成株式会社 Uv light-emitting device and method for manufacturing the same
CN105355740B (en) * 2015-10-19 2017-09-22 天津三安光电有限公司 Light emitting diode and preparation method thereof
CN106783528B (en) * 2015-11-25 2019-10-25 映瑞光电科技(上海)有限公司 Sapphire Substrate recycles the method reused
CN105742455B (en) * 2016-03-24 2018-05-22 华灿光电股份有限公司 A kind of light-emitting diode chip for backlight unit and preparation method thereof
CN105702815B (en) * 2016-04-11 2018-06-19 厦门市三安光电科技有限公司 The production method of flip LED chips
CN105762246B (en) * 2016-04-25 2017-11-28 厦门乾照光电股份有限公司 A kind of light emitting diode with vertical structure and preparation method thereof
JP6824501B2 (en) * 2017-02-08 2021-02-03 ウシオ電機株式会社 Semiconductor light emitting device
CN107808029A (en) * 2017-09-18 2018-03-16 华南理工大学 A kind of analysis method of efficiently light emitting diode (LED) chip with vertical structure n-electrode pattern
CN108336197B (en) * 2018-03-31 2023-06-20 华南理工大学 Vertical structure LED chip for preparing Ag reflector by two-step method and preparation method thereof
CN110350061A (en) * 2019-07-10 2019-10-18 佛山市国星半导体技术有限公司 A kind of LED chip, packaging and packaging method exempted from packaging plastic
CN111864027B (en) * 2019-10-11 2022-09-16 中国科学院宁波材料技术与工程研究所 Ultraviolet LED high-counter electrode, ultraviolet LED and preparation method thereof
CN112992884A (en) * 2020-12-08 2021-06-18 重庆康佳光电技术研究院有限公司 Display module, manufacturing method thereof and electronic equipment
CN113410363B (en) * 2021-06-17 2022-08-12 中国科学院半导体研究所 Micro LED chip structure, preparation method thereof and display device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101789475A (en) * 2010-01-21 2010-07-28 太原理工大学 Photonic crystal light-emitting diode and manufacturing method thereof
CN101840985A (en) * 2010-05-04 2010-09-22 厦门市三安光电科技有限公司 Gallium nitride based vertical light emitting diode with dual reflective layers and method for producing the same
CN101937960A (en) * 2010-08-20 2011-01-05 厦门市三安光电科技有限公司 AlGaInP light-emitting diode in vertical structure and manufacturing method thereof
CN103872208A (en) * 2014-03-26 2014-06-18 南昌大学 Light emitting diode of vertical structure of reflector with high reflectivity
CN104134723A (en) * 2014-08-08 2014-11-05 映瑞光电科技(上海)有限公司 Vertical type LED chip structure and manufacturing method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7915629B2 (en) * 2008-12-08 2011-03-29 Cree, Inc. Composite high reflectivity layer
US8680556B2 (en) * 2011-03-24 2014-03-25 Cree, Inc. Composite high reflectivity layer
JP5949294B2 (en) * 2011-08-31 2016-07-06 日亜化学工業株式会社 Semiconductor light emitting device
CN103579436A (en) * 2012-07-18 2014-02-12 广东量晶光电科技有限公司 Semiconductor light emitting structure and manufacturing method thereof
CN104576874B (en) * 2013-10-22 2018-01-09 泰谷光电科技股份有限公司 A kind of crystal-coated light-emitting diodes structure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101789475A (en) * 2010-01-21 2010-07-28 太原理工大学 Photonic crystal light-emitting diode and manufacturing method thereof
CN101840985A (en) * 2010-05-04 2010-09-22 厦门市三安光电科技有限公司 Gallium nitride based vertical light emitting diode with dual reflective layers and method for producing the same
CN101937960A (en) * 2010-08-20 2011-01-05 厦门市三安光电科技有限公司 AlGaInP light-emitting diode in vertical structure and manufacturing method thereof
CN103872208A (en) * 2014-03-26 2014-06-18 南昌大学 Light emitting diode of vertical structure of reflector with high reflectivity
CN104134723A (en) * 2014-08-08 2014-11-05 映瑞光电科技(上海)有限公司 Vertical type LED chip structure and manufacturing method thereof

Also Published As

Publication number Publication date
DE112015003673T5 (en) 2017-05-11
GB2542542A (en) 2017-03-22
WO2016019860A1 (en) 2016-02-11
GB201701184D0 (en) 2017-03-08
CN104134723A (en) 2014-11-05

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20200805