GB201701184D0 - Vertical LED chip structure and manufacturing method therefor - Google Patents
Vertical LED chip structure and manufacturing method thereforInfo
- Publication number
- GB201701184D0 GB201701184D0 GBGB1701184.2A GB201701184A GB201701184D0 GB 201701184 D0 GB201701184 D0 GB 201701184D0 GB 201701184 A GB201701184 A GB 201701184A GB 201701184 D0 GB201701184 D0 GB 201701184D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- manufacturing
- led chip
- method therefor
- chip structure
- vertical led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410390800.9A CN104134723A (en) | 2014-08-08 | 2014-08-08 | Vertical type LED chip structure and manufacturing method thereof |
PCT/CN2015/086098 WO2016019860A1 (en) | 2014-08-08 | 2015-08-05 | Vertical led chip structure and manufacturing method therefor |
Publications (3)
Publication Number | Publication Date |
---|---|
GB201701184D0 true GB201701184D0 (en) | 2017-03-08 |
GB2542542A GB2542542A (en) | 2017-03-22 |
GB2542542B GB2542542B (en) | 2017-09-20 |
Family
ID=51807325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1701184.2A Expired - Fee Related GB2542542B (en) | 2014-08-08 | 2015-08-05 | Vertical LED chip structure and manufacturing method therefor |
Country Status (4)
Country | Link |
---|---|
CN (1) | CN104134723A (en) |
DE (1) | DE112015003673T5 (en) |
GB (1) | GB2542542B (en) |
WO (1) | WO2016019860A1 (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104134723A (en) * | 2014-08-08 | 2014-11-05 | 映瑞光电科技(上海)有限公司 | Vertical type LED chip structure and manufacturing method thereof |
CN104638078B (en) | 2015-03-05 | 2017-05-10 | 天津三安光电有限公司 | Light emitting diode and manufacturing method for same |
CN104733572A (en) * | 2015-03-30 | 2015-06-24 | 映瑞光电科技(上海)有限公司 | Flip led chip and manufacturing method thereof |
CN104766912A (en) * | 2015-03-30 | 2015-07-08 | 映瑞光电科技(上海)有限公司 | Vertical-structure LED chip and manufacturing method thereof |
JP2017050439A (en) * | 2015-09-03 | 2017-03-09 | 豊田合成株式会社 | Uv light-emitting device and method for manufacturing the same |
CN105355740B (en) * | 2015-10-19 | 2017-09-22 | 天津三安光电有限公司 | Light emitting diode and preparation method thereof |
CN106783528B (en) * | 2015-11-25 | 2019-10-25 | 映瑞光电科技(上海)有限公司 | Sapphire Substrate recycles the method reused |
CN105742455B (en) * | 2016-03-24 | 2018-05-22 | 华灿光电股份有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
CN105702815B (en) * | 2016-04-11 | 2018-06-19 | 厦门市三安光电科技有限公司 | The production method of flip LED chips |
CN105762246B (en) * | 2016-04-25 | 2017-11-28 | 厦门乾照光电股份有限公司 | A kind of light emitting diode with vertical structure and preparation method thereof |
JP6824501B2 (en) * | 2017-02-08 | 2021-02-03 | ウシオ電機株式会社 | Semiconductor light emitting device |
CN107808029A (en) * | 2017-09-18 | 2018-03-16 | 华南理工大学 | A kind of analysis method of efficiently light emitting diode (LED) chip with vertical structure n-electrode pattern |
CN108336197B (en) * | 2018-03-31 | 2023-06-20 | 华南理工大学 | Vertical structure LED chip for preparing Ag reflector by two-step method and preparation method thereof |
CN110350061A (en) * | 2019-07-10 | 2019-10-18 | 佛山市国星半导体技术有限公司 | A kind of LED chip, packaging and packaging method exempted from packaging plastic |
CN111864027B (en) * | 2019-10-11 | 2022-09-16 | 中国科学院宁波材料技术与工程研究所 | Ultraviolet LED high-counter electrode, ultraviolet LED and preparation method thereof |
CN112992884A (en) * | 2020-12-08 | 2021-06-18 | 重庆康佳光电技术研究院有限公司 | Display module, manufacturing method thereof and electronic equipment |
CN113410363B (en) * | 2021-06-17 | 2022-08-12 | 中国科学院半导体研究所 | Micro LED chip structure, preparation method thereof and display device |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7915629B2 (en) * | 2008-12-08 | 2011-03-29 | Cree, Inc. | Composite high reflectivity layer |
CN101789475A (en) * | 2010-01-21 | 2010-07-28 | 太原理工大学 | Photonic crystal light-emitting diode and manufacturing method thereof |
CN101840985A (en) * | 2010-05-04 | 2010-09-22 | 厦门市三安光电科技有限公司 | Gallium nitride based vertical light emitting diode with dual reflective layers and method for producing the same |
CN101937960B (en) * | 2010-08-20 | 2012-08-22 | 厦门市三安光电科技有限公司 | AlGaInP light-emitting diode in vertical structure and manufacturing method thereof |
US8680556B2 (en) * | 2011-03-24 | 2014-03-25 | Cree, Inc. | Composite high reflectivity layer |
JP5949294B2 (en) * | 2011-08-31 | 2016-07-06 | 日亜化学工業株式会社 | Semiconductor light emitting device |
CN103579436A (en) * | 2012-07-18 | 2014-02-12 | 广东量晶光电科技有限公司 | Semiconductor light emitting structure and manufacturing method thereof |
CN104576874B (en) * | 2013-10-22 | 2018-01-09 | 泰谷光电科技股份有限公司 | A kind of crystal-coated light-emitting diodes structure |
CN103872208A (en) * | 2014-03-26 | 2014-06-18 | 南昌大学 | Light emitting diode of vertical structure of reflector with high reflectivity |
CN104134723A (en) * | 2014-08-08 | 2014-11-05 | 映瑞光电科技(上海)有限公司 | Vertical type LED chip structure and manufacturing method thereof |
-
2014
- 2014-08-08 CN CN201410390800.9A patent/CN104134723A/en active Pending
-
2015
- 2015-08-05 DE DE112015003673.3T patent/DE112015003673T5/en not_active Withdrawn
- 2015-08-05 WO PCT/CN2015/086098 patent/WO2016019860A1/en active Application Filing
- 2015-08-05 GB GB1701184.2A patent/GB2542542B/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB2542542B (en) | 2017-09-20 |
DE112015003673T5 (en) | 2017-05-11 |
GB2542542A (en) | 2017-03-22 |
WO2016019860A1 (en) | 2016-02-11 |
CN104134723A (en) | 2014-11-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20200805 |