CN105742455B - A kind of light-emitting diode chip for backlight unit and preparation method thereof - Google Patents
A kind of light-emitting diode chip for backlight unit and preparation method thereof Download PDFInfo
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- CN105742455B CN105742455B CN201610172229.2A CN201610172229A CN105742455B CN 105742455 B CN105742455 B CN 105742455B CN 201610172229 A CN201610172229 A CN 201610172229A CN 105742455 B CN105742455 B CN 105742455B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
Abstract
The invention discloses a kind of light-emitting diode chip for backlight unit and preparation method thereof, belong to technical field of semiconductors.The light-emitting diode chip for backlight unit includes substrate, N-type layer, luminescent layer, P-type layer, transparent conductive film, P-type electrode, N-type electrode, and DBR, N-type layer, luminescent layer, P-type layer is sequentially laminated on the first surface of substrate, P-type layer is equipped with the groove that N-type layer is extended to from P-type layer, transparent conductive film and P-type electrode are successively set in P-type layer, N-type electrode is arranged in N-type layer, DBR is arranged on the second surface of substrate, second surface is the surface opposite with first surface, light-emitting diode chip for backlight unit further includes the Ag metallic reflectors and coat of metal being sequentially laminated on DBR, coat of metal and DBR form sealing space, Ag metallic reflectors are located in sealing space.Comprehensive reflection can be achieved in the present invention, improves the luminosity and luminous efficiency of light emitting diode.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of light-emitting diode chip for backlight unit and preparation method thereof.
Background technology
Light emitting diode (Light Emitting Diode, abbreviation LED) is electric energy can be changed into partly leading for luminous energy
Body diode.
Existing LED chip includes the N-type layer, luminescent layer, the P-type layer that are sequentially laminated on the first surface of substrate, in P-type layer
Equipped with the groove that N-type layer is extended to from P-type layer, transparent conductive film and P-type electrode are successively set in P-type layer, and N-type electrode is set
It puts in N-type layer, the second surface of substrate is equipped with distributed bragg reflector mirror (Distributed Bragg
Reflection, abbreviation DBR).Wherein, second surface is the surface opposite with first surface.
In the implementation of the present invention, inventor has found that the prior art has at least the following problems：
Although DBR can reach more than 99%, DBR for non-normal incidence for the reflectivity of vertical incidence light
The reflectivity of light is relatively low, and the luminous efficiency in turn resulting in LED chip is relatively low.
The content of the invention
In order to solve prior art DBR for the reflectivity of non-normal incidence light it is relatively low, cause the luminous effect of LED chip
The problem of rate is relatively low, an embodiment of the present invention provides a kind of light-emitting diode chip for backlight unit and preparation method thereof.The technical solution is such as
Under：
On the one hand, an embodiment of the present invention provides a kind of light-emitting diode chip for backlight unit, the light-emitting diode chip for backlight unit includes lining
Bottom, N-type layer, luminescent layer, P-type layer, transparent conductive film, P-type electrode, N-type electrode and distributed bragg reflector mirror DBR,
The N-type layer, the luminescent layer, the P-type layer are sequentially laminated on the first surface of the substrate, the P-type layer be equipped with from
The P-type layer extends to the groove of the N-type layer, and the transparent conductive film and the P-type electrode are successively set on the p-type
On layer, the N-type electrode is arranged in the N-type layer, and the DBR is arranged on the second surface of the substrate, second table
Face is the surface opposite with the first surface, and the light-emitting diode chip for backlight unit further includes the Ag being sequentially laminated on the DBR
Metallic reflector and coat of metal, the coat of metal and the DBR form sealing space, the Ag metallic reflectors position
In in the sealing space.
Optionally, the coat of metal be TiW layers, the Ti layers that are alternatively formed and Pt layers or TiN layer.
Optionally, the thickness of the Ag metallic reflectors is 100 angstroms~3 microns.
Optionally, the light-emitting diode chip for backlight unit, which further includes, is arranged between the DBR and the Ag metallic reflectors
Adhesion layer.
Optionally, the adhesion layer includes Ti layers, Cr layers or Ni layers.
Optionally, the thickness of the adhesion layer is 1 angstrom~500 angstroms.
On the other hand, an embodiment of the present invention provides a kind of production method of light-emitting diode chip for backlight unit, the production methods
Including：
N-type layer, luminescent layer, P-type layer are sequentially formed in the first surface of substrate, forms epitaxial layer；
The groove that the N-type layer is extended to from the P-type layer is formed in the P-type layer；
Transparent conductive film is formed in the P-type layer；
P-type electrode is set on the transparent conductive film, N-type electrode is set in the N-type layer；
The substrate is thinned；
Distributed bragg reflector mirror DBR is formed in the second surface of the substrate, the second surface is and described the
The opposite surface in one surface；
The DBR, the substrate and the epitaxial layer are cut and divided, obtains mutually independent LED core
Piece；
On the DBR formed Ag metallic reflectors, and by the Ag metallic reflectors along between the LED chip point
Secant is torn, and the Ag metallic reflectors on the cut-off rule between the LED chip are removed by glued membrane；
The deposited metal protective layer on the Ag metallic reflectors, and pass through and expand film action by the coat of metal along institute
The cut-off rule stated between LED chip disconnects, and the coat of metal and the DBR form sealing space, the Ag metallic reflections
Layer is located in the sealing space.
Optionally, the coat of metal be TiW layers, the Ti layers that are alternatively formed and Pt layers or TiN layer.
Optionally, the glued membrane includes polyvinylchloride base material and acrylic system sticker.
Optionally, it is described that Ag metallic reflectors are formed on the DBR, including：
Adhesion layer is formed on the DBR；
Ag metallic reflectors are formed on the adhesion layer.
The advantageous effect that technical solution provided in an embodiment of the present invention is brought is：
By the setting Ag metallic reflectors on DBR, non-normal incidence light is reflected using Ag metallic reflectors,
It realizes comprehensive reflection, improves the luminosity and luminous efficiency of light emitting diode.Moreover, Ag metallic reflectors are arranged on metal
In the sealing space that protective layer and DBR are formed, migration can occur to avoid Ag or be chemically reacted with air, influence Ag metals
The reflecting effect in reflecting layer improves the stability of LED core piece performance.
Description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present invention, for
For those of ordinary skill in the art, without creative efforts, other are can also be obtained according to these attached drawings
Attached drawing.
Fig. 1 is a kind of structure diagram for light-emitting diode chip for backlight unit that the embodiment of the present invention one provides；
Fig. 2 is a kind of flow chart of the production method of light-emitting diode chip for backlight unit provided by Embodiment 2 of the present invention；
Fig. 3 a- Fig. 3 h are the structure diagrams in light-emitting diode chip for backlight unit manufacturing process provided by Embodiment 2 of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
An embodiment of the present invention provides a kind of light-emitting diode chip for backlight unit, and referring to Fig. 1, which includes substrate
1st, N-type layer 2, luminescent layer 3, P-type layer 4, transparent conductive film (TCO) 5, P-type electrode 6, N-type electrode 7, DBR 8, Ag metallic reflections
Layer 9 and coat of metal 10, N-type layer 2, luminescent layer 3, P-type layer 4 are sequentially laminated on the first surface of substrate 1, and P-type layer 4 is equipped with
The groove 100 of N-type layer 2 is extended to from P-type layer 4, transparent conductive film 5 and P-type electrode 6 are successively set in P-type layer 4, N-type electricity
Pole 7 is arranged in N-type layer 2, and DBR 8, Ag metallic reflectors 9, coat of metal 10 are successively set on the second surface of substrate 1,
Coat of metal 10 and DBR 8 form sealing space, and Ag metallic reflectors 9 are located in sealing space, and second surface is and first
The opposite surface in surface.
In the present embodiment, N-type layer 2 can be N-type GaN layer, and luminescent layer 3 can be alternately stacked InGaN layer and GaN
Layer, P-type layer 4 can be p-type GaN layer.
Optionally, substrate 1 can be Sapphire Substrate, the graphical sapphire substrate (Patterned of surfacing
Sapphire Substrate, abbreviation PSS), Si substrates, GaN substrate, SiN substrates, SiC substrate, one kind in glass substrate,
It is widely applicable.
Optionally, the depth of groove 100 can be 0.5~5 micron, and groove 100 is made to extend to N-type layer 2.
Optionally, TCO 5 can be tin indium oxide (Indium Tin Oxides, abbreviation ITO), the zinc oxide of aluminium doping
Transparent conducting glass (AZO), ZnO transparent conductive glass (GZO), indium gallium zinc oxide (the Indium Gallium of gallium doping
Zinc Oxide, abbreviation IGZO), NiAu, one kind in graphene, it is widely applicable.
Optionally, the thickness of Ag metallic reflectors 9 can be 100 angstroms~3 microns.When the thickness of Ag metallic reflectors 9 is small
It is poor to the reflecting effect of incident ray when 100 angstroms；When the thickness of Ag metallic reflectors 9 is more than 3 microns, waste of materials,
Increase cost of implementation.
Optionally, coat of metal 10 can be TiW layers, the Ti layers that are alternatively formed and Pt layers or TiN layer.
Optionally, which can also include the adherency being arranged between DBR 8 and Ag metallic reflectors 9
Layer (not shown), to increase the adhesive capacity between Ag metallic reflectors 9 and DBR 8.
Preferably, adhesion layer can include Ti layers, Cr layers or Ni layers.Using versatile material, cost of implementation is low.
Preferably, the thickness of adhesion layer can be 1 angstrom~500 angstroms.When the thickness of adhesion layer is less than 1 angstrom, adhesion property
It is poor；When the thickness of adhesion layer is more than 500 angstroms, waste of materials increases cost of implementation.
The embodiment of the present invention on DBR by setting Ag metallic reflectors, using Ag metallic reflectors to non-normal incidence
Light is reflected, and realizes comprehensive reflection, improves the luminosity and luminous efficiency of light emitting diode.Moreover, Ag metals are anti-
It penetrates layer to be arranged in the sealing space that coat of metal and DBR are formed, migration can occur to avoid Ag or chemistry occurs with air
Reaction influences the reflecting effect of Ag metallic reflectors, improves the stability of LED core piece performance.
Embodiment two
An embodiment of the present invention provides a kind of production method of light-emitting diode chip for backlight unit, referring to Fig. 2, the production method bag
It includes：
Step 201：N-type layer, luminescent layer, P-type layer are sequentially formed in the first surface of substrate, forms epitaxial layer.
Fig. 3 a be perform step 201 after light-emitting diode chip for backlight unit structure diagram.Wherein, 1 is substrate, and 2 be N-type
Layer, 3 be luminescent layer, and 4 be P-type layer.
In the present embodiment, N-type layer can be N-type GaN layer, and luminescent layer can be alternately stacked InGaN layer and GaN
Layer, P-type layer can be p-type GaN layer.
Optionally, substrate can be Sapphire Substrate, the graphical sapphire substrate (Patterned of surfacing
Sapphire Substrate, abbreviation PSS), Si substrates, GaN substrate, SiN substrates, SiC substrate, one kind in glass substrate,
It is widely applicable.
Step 202：The groove that N-type layer is extended to from P-type layer is formed in P-type layer.
Fig. 3 b be perform step 202 after light-emitting diode chip for backlight unit structure diagram.Wherein, 1 is substrate, and 2 be N-type
Layer, 3 be luminescent layer, and 4 be P-type layer, and 100 be groove.
Optionally, the depth of groove can be 0.5~5 micron, and groove is made to extend to N-type layer.
Step 203：Transparent conductive film is formed in P-type layer.
Fig. 3 c be perform step 203 after light-emitting diode chip for backlight unit structure diagram.Wherein, 1 is substrate, and 2 be N-type
Layer, 3 be luminescent layer, and 4 be P-type layer, and 5 be transparent conductive film, and 100 be groove.
Optionally, TCO can be saturating for the zinc oxide of tin indium oxide (Indium Tin Oxides, abbreviation ITO), aluminium doping
Bright electro-conductive glass (AZO), ZnO transparent conductive glass (GZO), indium gallium zinc oxide (the Indium Gallium of gallium doping
Zinc Oxide, abbreviation IGZO), NiAu, one kind in graphene, it is widely applicable.
Step 204：P-type electrode on transparent conductive film is set, N-type electrode is set in N-type layer.
Fig. 3 d be perform step 204 after light-emitting diode chip for backlight unit structure diagram.Wherein, 1 is substrate, and 2 be N-type
Layer, 3 be luminescent layer, and 4 be P-type layer, and 5 be transparent conductive film, and 6 be P-type electrode, and 7 be N-type electrode, and 100 be groove.
Step 205：Substrate is thinned.
Step 206：DBR is formed in the second surface of substrate.
In the present embodiment, second surface is the surface opposite with first surface.
Fig. 3 e be perform step 206 after light-emitting diode chip for backlight unit structure diagram.Wherein, 1 is substrate, and 2 be N-type
Layer, 3 be luminescent layer, and 4 be P-type layer, and 5 be transparent conductive film, and 6 be P-type electrode, and 7 be N-type electrode, and 8 be DBR, and 100 be groove.
Step 207：DBR, substrate and epitaxial layer are cut and divided, obtains mutually independent LED chip.
Fig. 3 f be perform step 207 after light-emitting diode chip for backlight unit structure diagram.Wherein, 1 is substrate, and 2 be N-type
Layer, 3 be luminescent layer, and 4 be P-type layer, and 5 be transparent conductive film, and 6 be P-type electrode, and 7 be N-type electrode, and 8 be DBR, and 100 be groove,
200 be cut-off rule.
Specifically, which can include：
Stealthy cutting carries out substrate using stealthy cutting technique, crack is formed in substrate；
Sliver is carried out to DBR, substrate and epitaxial layer using splitting techniques, obtains mutually independent LED chip.
In the concrete realization, using splitting techniques to DBR, substrate and epitaxial layer carry out sliver before, can will not solely
The one side that vertical LED chip is equipped with epitaxial layer is adhered on film, then carries out sliver across film, though obtained LED chip phase
Mutually independent but not separated, the spacing of adjacent LED chip may remain between 1 micron~2 millimeters.
Step 208：Ag metallic reflectors are formed on DBR, and by Ag metallic reflectors along the cut-off rule between LED chip
Tear removes the Ag metallic reflectors on the cut-off rule between LED chip by glued membrane.
Fig. 3 g be perform step 208 after light-emitting diode chip for backlight unit structure diagram.Wherein, 1 is substrate, and 2 be N-type
Layer, 3 be luminescent layer, and 4 be P-type layer, and 5 be transparent conductive film, and 6 be P-type electrode, and 7 be N-type electrode, and 8 be DBR, and 9 be Ag metals
Reflecting layer, 100 be groove, and 200 be cut-off rule.
Specifically, Ag metallic reflectors are formed on DBR, can be included：
Ag metallic reflectors are formed on DBR using electron gun evaporation coating technique or metal sputtering techniques.
Optionally, glued membrane can include polyvinyl chloride (Polyvinyl chloride, abbreviation PVC) base material and acrylic system
Sticker.
In practical applications, one layer of glued membrane can be first adhered on the Ag metallic reflectors of formation, then across glued membrane to Ag
Metallic reflector applies the power along the extending direction of the cut-off rule between LED chip, by force by Ag metallic reflectors along LED chip
Between cut-off rule tear apart.Since the adhesiveness of tear region Ag is poor, after tear, Ag metallic reflectors correspond to
Tear region can form notch, and the width of notch is usually 1 micron~20 microns.
It is readily apparent that, after step 208, which can also include：
Remove glued membrane.
Optionally, Ag metallic reflectors are formed on DBR, can be included：
Adhesion layer is formed on DBR；
Ag metallic reflectors are formed on adhesion layer.
Optionally, the thickness of Ag metallic reflectors can be 100 angstroms~3 microns.When the thickness of Ag metallic reflectors is less than
It is poor to the reflecting effect of incident ray at 100 angstroms；When the thickness of Ag metallic reflectors is more than 3 microns, waste of materials increases
Add cost of implementation.
Step 209：The deposited metal protective layer on Ag metallic reflectors, and pass through and expand film action by coat of metal edge
Cut-off rule between LED chip disconnects, and coat of metal and DBR form sealing space, and Ag metallic reflectors are located at sealing space
It is interior.
Fig. 3 h be perform step 209 after light-emitting diode chip for backlight unit structure diagram.Wherein, 1 is substrate, and 2 be N-type
Layer, 3 be luminescent layer, and 4 be P-type layer, and 5 be transparent conductive film, and 6 be P-type electrode, and 7 be N-type electrode, and 8 be DBR, and 9 be Ag metals
Reflecting layer, 10 be coat of metal, and 100 be groove, and 200 be cut-off rule.
Specifically, the deposited metal protective layer on Ag metallic reflectors, can include：
Using sputtering technology on Ag metallic reflectors deposited metal protective layer.
In practical applications, by extending the film being adhered to before sliver in LED chip, you can by force will be by metal coating
Layer is disconnected along the cut-off rule between LED chip.Expand after film, separation is realized between LED chip.And the adherency of coat of metal
Relative close will not form the notch of similar Ag metallic reflectors after disconnection.
Optionally, adhesion layer can include Ti layers, Cr layers or Ni layers.Using versatile material, cost of implementation is low.
Optionally, the thickness of adhesion layer can be 1 angstrom~500 angstroms.When the thickness of adhesion layer is less than 1 angstrom, adhesion property
It is poor；When the thickness of adhesion layer is more than 500 angstroms, waste of materials increases cost of implementation.
Optionally, coat of metal can be TiW layers, the Ti layers that are alternatively formed and Pt layers or TiN layer.
Optionally, coat of metal can be TiW layers, the Ti layers that are alternatively formed and Pt layers or TiN layer.
The embodiment of the present invention on DBR by setting Ag metallic reflectors, using Ag metallic reflectors to non-normal incidence
Light is reflected, and realizes comprehensive reflection, improves the luminosity and luminous efficiency of light emitting diode.Moreover, Ag metals are anti-
It penetrates layer to be arranged in the sealing space that coat of metal and DBR are formed, migration can occur to avoid Ag or chemistry occurs with air
Reaction influences the reflecting effect of Ag metallic reflectors, improves the stability of LED core piece performance.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modifications, equivalent replacements and improvements are made should all be included in the protection scope of the present invention.
Claims (4)
1. a kind of production method of light-emitting diode chip for backlight unit, which is characterized in that the production method includes：
N-type layer, luminescent layer, P-type layer are sequentially formed in the first surface of substrate, forms epitaxial layer；
The groove that the N-type layer is extended to from the P-type layer is formed in the P-type layer；
Transparent conductive film is formed in the P-type layer；
P-type electrode is set on the transparent conductive film, N-type electrode is set in the N-type layer；
The substrate is thinned；
Distributed bragg reflector mirror DBR is formed in the second surface of the substrate, the second surface is and first table
The opposite surface in face；
The DBR, the substrate and the epitaxial layer are cut and divided, obtains mutually independent LED chip；
Ag metallic reflectors are formed on the DBR, and by the Ag metallic reflectors along the cut-off rule between the LED chip
Tear, the Ag metallic reflectors on the cut-off rule between the LED chip are removed by glued membrane；
The deposited metal protective layer on the Ag metallic reflectors, and pass through expand film action will the coat of metal along described in
Cut-off rule between LED chip disconnects, and the coat of metal and the DBR form sealing space, the Ag metallic reflectors
In the sealing space.
2. production method according to claim 1, which is characterized in that the coat of metal is TiW layers, is alternatively formed
Ti layers and Pt layers or TiN layer.
3. production method according to claim 1 or 2, which is characterized in that the glued membrane include polyvinylchloride base material and
Acrylic system sticker.
4. production method according to claim 1 or 2, which is characterized in that described that Ag metallic reflections are formed on the DBR
Layer, including：
Adhesion layer is formed on the DBR；
Ag metallic reflectors are formed on the adhesion layer.
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| CN106784200B (en) * | 2017-02-15 | 2018-10-19 | 西安中为光电科技有限公司 | A kind of production method of stealthy cutting and back of the body plating LED chip |
| CN108231966B (en) * | 2017-12-25 | 2019-05-21 | 佛山市国星半导体技术有限公司 | A kind of LED chip and preparation method thereof with reflecting mirror |
| CN108172674A (en) * | 2018-02-06 | 2018-06-15 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips and preparation method thereof |
| CN110071200B (en) * | 2019-03-21 | 2021-04-27 | 华灿光电股份有限公司 | Resonant cavity light emitting diode and manufacturing method thereof |
| CN110970538B (en) * | 2019-11-22 | 2022-03-15 | 深圳市思坦科技有限公司 | Red light LED epitaxial wafer, LED epitaxial wafer segmentation method and LED epitaxial wafer structure |
| CN111129256A (en) * | 2019-12-30 | 2020-05-08 | 广东德力光电有限公司 | Silver mirror-based flip high-voltage chip and manufacturing method thereof |
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