CN106229400A - A kind of light emitting diode and preparation method thereof - Google Patents
A kind of light emitting diode and preparation method thereof Download PDFInfo
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- CN106229400A CN106229400A CN201610844006.6A CN201610844006A CN106229400A CN 106229400 A CN106229400 A CN 106229400A CN 201610844006 A CN201610844006 A CN 201610844006A CN 106229400 A CN106229400 A CN 106229400A
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 72
- 239000002184 metal Substances 0.000 claims abstract description 72
- 239000004065 semiconductor Substances 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 125000006850 spacer group Chemical group 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000000407 epitaxy Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000010276 construction Methods 0.000 description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 239000010931 gold Substances 0.000 description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 9
- 229910002601 GaN Inorganic materials 0.000 description 8
- 238000000605 extraction Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 6
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical group O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- CSBHIHQQSASAFO-UHFFFAOYSA-N [Cd].[Sn] Chemical compound [Cd].[Sn] CSBHIHQQSASAFO-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000000927 vapour-phase epitaxy Methods 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Chemical compound [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of light emitting diode and preparation method thereof.A kind of light emitting diode, comprises: epitaxial substrate；N type semiconductor layer, is positioned on described epitaxial substrate surface；Luminescent layer, is positioned on described n type semiconductor layer surface, and the upper surface of definition luminescent layer is first surface, and the lower surface of luminescent layer is second surface；P type semiconductor layer, is positioned on described luminescent layer first surface；P-type metal electrode, is positioned on described p type semiconductor layer surface；Comprising the N-type metal electrode of metallic reflection Rotating fields, be positioned on the n type semiconductor layer surface that local is exposed, the upper surface of definition metallic reflection Rotating fields is the 3rd surface, and the lower surface of metallic reflection Rotating fields is the 4th surface；It is characterized in that: the height on described 3rd surface is more than or equal to the height of first surface, and the height on described 4th surface is less than or equal to the height of second surface.
Description
Technical field
The invention belongs to light-emitting diode chip for backlight unit field, be specifically related to a kind of light emitting diode and preparation method thereof.
Background technology
Have that life-span length, volume vibration strength little, high, heating degree be little due to light emitting diode and the advantage such as power consumption is low,
Light emitting diode has been widely used in household appliances and the display lamp of various instrument or light source.In recent years, due to luminescence
Diode develops towards multicolour and high brightness, and the range of application of light emitting diode has been expanded to large-scale outdoor display advertisement
Board and traffic signal light etc., even can replace tengsten lamp and finsen lamp to become the illumination having power saving and environment-friendly function concurrently future
Lamp source, becomes market mainstream trend.
In known technology, in sapphire (Sapphire Substrate) epitaxial substrate, generally form gallium nitride
(GaN) epitaxial layer is to make light emitting diode, and later use manufacture of semiconductor technology produces gallium nitride on sapphire substrate
Based light-emitting diode.At present, the p-type electrode in the gallium nitride based light emitting diode of purple-blue-green-gold-tinted and n-type electrode knot are sent
Structure generally uses Cr/Al/Ti/Pt/Au structure, and Ti/Pt/Au layer in purple/blue green/yellow band (380 ~ 550nm) to light
Absorbing very strong, its reflectance is below 80%, and it sends from luminescent layer (such as MQW quantum well layer) side as depicted in figs. 1 and 2
Light (such as light a), (such as light b), final only small part light is (such as light to have significant portion can be absorbed by Ti/Pt/Au layer
Line c) effectively takes out, thus have impact in the gallium nitride based light emitting diode sending purple/blue green/yellow band (380 ~ 550nm)
The extraction efficiency of the MQW ambient light of luminescent layer.
Summary of the invention
It is an object of the invention to: a kind of light emitting diode and preparation method thereof is provided, solve in light emitting diode luminous
The extraction efficiency problem of layer ambient light.
For reaching above-mentioned purpose, according to the first aspect of the invention, a kind of light emitting diode construction is proposed.This light-emitting diodes
Pipe includes: epitaxial substrate；N type semiconductor layer, is positioned on described epitaxial substrate surface；Luminescent layer, is positioned at described N-type semiconductor
On layer surface, the upper surface of definition luminescent layer is first surface, and the lower surface of luminescent layer is second surface；P type semiconductor layer,
It is positioned on described luminescent layer first surface；P-type metal electrode, is positioned on described p type semiconductor layer surface；Comprise metal anti-
Penetrate the N-type metal electrode of Rotating fields, be positioned on the n type semiconductor layer surface that local is exposed, definition metallic reflection Rotating fields
Upper surface is the 3rd surface, and the lower surface of metallic reflection Rotating fields is the 4th surface；It is characterized in that: the height on described 3rd surface
Degree is more than or equal to the height of first surface, and the height on described 4th surface is less than or equal to the height of second surface.
According to the second aspect of the invention, it is also proposed that the processing technology of a kind of light emitting diode construction.This chip manufacturing work
Skill comprises the following steps.Epitaxial substrate is provided；Form n type semiconductor layer on described epitaxial substrate surface；Form luminescent layer
On described n type semiconductor layer surface, the upper surface of definition luminescent layer is first surface, and the lower surface of luminescent layer is the second table
Face；Form p type semiconductor layer on described luminescent layer first surface；Local is down formed exposed from p type semiconductor layer surface
N type semiconductor layer surface；Form p-type metal electrode on described p type semiconductor layer surface, and form that to comprise metal anti-
Penetrate the N-type metal electrode of Rotating fields on the n type semiconductor layer surface that described local is exposed, the height on wherein said 3rd surface
Degree is more than or equal to the height of first surface, and the height on described 4th surface is less than or equal to the height of second surface.
In some embodiments of the invention, the height on described 3rd surface is more than or equal to the height of first surface, described
The height on the 4th surface is less than or equal to the height of second surface, to reduce the absorption effects of N-type metal electrode.
In some embodiments of the invention, described p-type, N-type metal electrode thickness are 500nm ~ 10 μm.
In some embodiments of the invention, described N-type metal electrode includes metallic spacer, metallic reflector and gold
Belong to electrode layer.
In some embodiments of the invention, described N-type metal electrode include the most successively the first metallic spacer,
Metallic reflector, the second metallic spacer and metal electrode layer.
In some embodiments of the invention, described metallic reflector is the one in Al, Ag, Ni, Zn or a combination thereof, its
Thickness is 50 ~ 1500nm.
In some embodiments of the invention, described metallic spacer be the one of Cr, Ti, Pt, Al, Ag, Ni, W or its
Combination, its thickness is 1 ~ 500nm.
In some embodiments of the invention, described metallic spacer is multilayer lamination structure or clad structure.
In some embodiments of the invention, described metal level is Au, and its thickness is 50 ~ 3000nm.
In some embodiments of the invention, described epitaxial substrate is Al2O3, one in SiC, Si or a combination thereof.
In some embodiments of the invention, described epitaxial substrate forms u-shaped semiconductor layer.
In some embodiments of the invention, on described p type semiconductor layer surface, transparency conducting layer is formed.
In some embodiments of the invention, described transparency conducting layer is tin indium oxide (ITO) or zinc oxide (ZnO) or oxygen
Cadmium stannum (CTO) or Indium sesquioxide. (InO) or indium (In) doping zinc-oxide (ZnO) or aluminum (Al) doping zinc-oxide (ZnO) or gallium
(Ga) one in doping zinc-oxide (ZnO) or a combination thereof.
In some embodiments of the invention, the described method forming exposed n type semiconductor layer surface, local includes doing
Formula etching or Wet-type etching method.
Other features and advantages of the present invention will illustrate in the following description, and, partly become from description
Obtain it is clear that or understand by implementing the present invention.The purpose of the present invention and other advantages can be by description, rights
Structure specifically noted in claim and accompanying drawing realizes and obtains.
Accompanying drawing explanation
Accompanying drawing is for providing a further understanding of the present invention, and constitutes a part for description, with the reality of the present invention
Execute example together for explaining the present invention, be not intended that limitation of the present invention.Additionally, accompanying drawing data be describe summary, be not by
Ratio is drawn.
Fig. 1 and Fig. 2 is the profile of known light emitting diode construction, and wherein Fig. 2 is the enlarged drawing of Fig. 1 dotted line frame.
Fig. 3 and Fig. 4 is the profile of the light emitting diode construction of the embodiment of the present invention 1, and wherein Fig. 4 is Fig. 3 dotted line frame
Enlarged drawing.
Fig. 5 ~ Fig. 9 is the light emitting diode construction fabrication processing profile of the embodiment of the present invention 2.
In figure, each label represents: 100: epitaxial substrate；200: light emitting epitaxial layer；201:u type semiconductor layer；202:N type half
Conductor layer；203: luminescent layer；204:P type semiconductor layer；300: transparency conducting layer；400:N type metal electrode；401: the first metals
Sealing coat；402: metallic reflector；403: the second metallic spacers；404: metal electrode layer；500:P type metal electrode；501:
First metallic spacer；502: metallic reflector；503: the second metallic spacers；504: metal electrode layer；600: photoresist.
Detailed description of the invention
In order to enable to understand further the present invention, detailed step and composition thereof will be proposed in following description, it addition,
Well-known composition or step are not described in details, to avoid the restriction causing the present invention unnecessary.The present invention is relatively
Good embodiment will be described in detail as follows, but in addition to these describe in detail, the present invention can also be implemented in other widely
Embodiment in, and the scope of the present invention is not limited, and is as the criterion with scope of the patent claims.
For solving the extraction efficiency problem of luminescent layer ambient light in known luminescence diode, the present invention proposes a kind of luminous two
Pole tubular construction and preparation method thereof, solving the light that sends of luminescent layer side has the significant portion can be by asking that metal electrode layer absorbs
Topic, to promote the brightness of light emitting diode, cooperation is illustrated the making of light emitting diode construction of the present invention by example below
Method.
Embodiment 1
Refer to Fig. 3 and Fig. 4, it is the profile of light emitting diode construction of embodiment 1.Light emitting diode construction includes: of heap of stone
Brilliant substrate 100；U-shaped semiconductor layer 201；N type semiconductor layer 202, is positioned on described epitaxial substrate surface；Luminescent layer 203, position
On described n type semiconductor layer surface, the upper surface of definition luminescent layer is first surface, and the lower surface of luminescent layer is the second table
Face；P type semiconductor layer 204, is positioned on described luminescent layer 203 first surface；Transparency conducting layer 300, is positioned at described p-type and partly leads
On body layer 204 surface；P-type metal electrode 500, is positioned on described transparency conducting layer 300 surface, p-type metal electrode 500 from
Under supreme include the first metallic spacer 501, metallic reflector the 502, second metallic spacer 503 and metal electrode layer successively
504；N-type metal electrode 400, is positioned on the n type semiconductor layer surface that local is exposed, and N-type metal electrode 400 depends on from bottom to up
Secondary the first metallic spacer 401, metallic reflector the 402, second metallic spacer 403 and the metal electrode layer 404 of including, definition gold
The upper surface belonging to reflecting layer 402 is the 3rd surface, and lower surface is the 4th surface；Wherein the height on the 3rd surface is more than or equal to first
The height on surface, the height on described 4th surface is less than or equal to the height of second surface.
Above-mentioned light emitting diode construction, the height on described 3rd surface is more than or equal to the height of first surface, described
The height on the 4th surface is less than or equal to the height of second surface, and in the present embodiment, the height on the most described 3rd surface is more than
The height of first surface, the height on described 4th surface is less than the height of second surface；Described epitaxial substrate 100 selects Al2O3、
One in SiC, Si or a combination thereof, be preferably Al in the present embodiment2O3As epitaxial substrate (Sapphire Substrate)；
Described u-shaped semiconductor layer 201, n type semiconductor layer 202, luminescent layer 203 and p type semiconductor layer 204 constitute light emitting epitaxial layer 200,
Wherein, u-shaped semiconductor layer 201 is u-GaN layer (involuntary doped gallium nitride) structure, and n type semiconductor layer 202 is N-GaN layer (N
Type gallium nitride) structure, luminescent layer 203 is aluminium gallium nitride alloy (AlGaN) MQW (MQW) active layer, and p type semiconductor layer 204 is
P-GaN layer (p-type gallium nitride) structure；Described transparency conducting layer 300 selects tin indium oxide (ITO) or zinc oxide (ZnO) or oxidation
Cadmium stannum (CTO) or Indium sesquioxide. (InO) or indium (In) doping zinc-oxide (ZnO) or aluminum (Al) doping zinc-oxide (ZnO) or gallium (Ga)
One in doping zinc-oxide (ZnO) or a combination thereof, be preferably tin indium oxide (ITO) as current extending in the present embodiment；
Described p-type metal electrode 500 includes the most successively: the first metallic spacer 501, metallic reflector the 502, second metal every
Absciss layer 503 and metal electrode layer 504, wherein the first metallic spacer 501 select the one of Cr, Ti, Pt, Al, Ag, Ni, W or its
Combination, its thickness is 1 ~ 500nm, the multilayer lamination structure of the preferred Cr/Al/Ti of this enforcement, thickness be respectively interposed in 1 ~ 5nm, 50 ~
200nm and 50 ~ 200nm, metallic reflector 502 selects the one in Al, Ag, Ni, Zn or a combination thereof, and its thickness is 50 ~
1500nm, the preferred Al of this enforcement are as metallic reflector, and its thickness is 50 ~ 1500nm, preferred thickness between 100 ~ 500nm,
Two metallic spacers 503 select one or a combination thereof of Cr, Ti, Pt, Al, Ag, Ni, W, and its thickness is 1 ~ 500nm, and this enforcement is excellent
Selecting the multilayer lamination structure of Ti/Pt, thickness is respectively interposed in 50 ~ 200nm, 50 ~ 200nm, and metal electrode layer selects Au, and its thickness is
50 ~ 3000nm, preferred thickness is between 1000 ~ 2000nm.Being similar to, N-type metal electrode 400 includes the most successively: first
Metallic spacer 401, metallic reflector the 402, second metallic spacer 403 and metal electrode layer 404, itself and p-type metal electrode
The corresponding material of each structure sheaf, thickness are identical.It should be noted that described metallic spacer can be multilayer lamination structure,
Can also be clad structure, the most then metallic spacer by metallic reflector parcel active to such as Al, Ag etc., thus can increase
Add the reliability of electrode structure.
In known luminescence diode structure, the light sent from luminescent layer (SQW) side have significant portion can by N-type gold
Belong to electrode layer (such as Cr/Al/Ti/Pt/Au layer) to absorb, thus have impact on effective extraction of luminous efficiency.And the present embodiment 1
Light emitting diode construction, by optimizing electrode material and thickness, can be effectively reduced the lateral light of luminescent layer and take out by N-type metal
The probability of electrode extinction, thus improve efficiency of light extraction.From figs. 3 and 4 it can be seen that with existing light emitting diode (Fig. 1 and Fig. 2)
Comparing, (such as light a), the light absorbed by metal electrode subtracts the light sent from luminescent layer (MQW quantum well layer) side significantly
It is weak that (such as light b), and the light taken out after reflecting via metallic reflector strengthens, and (such as light c), therefore light extraction efficiency is able to
Promote.
Need to know, the known skill being chosen as those skilled in the art of the layers of material in light emitting diode construction
Art, can select the most flexibly.Those skilled in the art can also add following optional step as required with further
Improve the illumination effect of LED structure: form cushion (Buffer), form electronic barrier layer (EBL) etc..This is also this area
The known technology of technical staff, does not repeats.
Embodiment 2
The following is with the chip structure of Fig. 3 and Fig. 4 for example to introduce chip fabrication technique, so that the 3rd table of described chip
The height in face is more than or equal to the height of first surface, and the height on described 4th surface is less than or equal to the height of second surface
Degree.This chip structure can use each step following to be formed.
Refer to Fig. 5～Fig. 9, it is respectively light emitting diode construction fabrication processing profile of the present invention.Chip system
(1)～(4) is comprised the following steps as technique.Step (1) is to form light emitting epitaxial layer on epitaxial substrate；Step (2) be from
Light emitting epitaxial layer surface down forms the platform surface that local is exposed；Step (3) is to form transparency conducting layer partly to lead in described p-type
On body layer surface；Step (4) is to make p-type metal electrode and N-type metal electrode respectively.
With initial reference to Fig. 5, it is provided that epitaxial substrate 100；Formed again gallium nitride base light emitting epitaxial layer 200 in epitaxial substrate 100 it
On, concretely comprise the following steps: form u-shaped semiconductor layer 201, n type semiconductor layer 202 on described epitaxial substrate 100 surface；Formed
Luminescent layer 203 is on described n type semiconductor layer 202 surface；Formed p type semiconductor layer 204 in described luminescent layer surface 203 it
On；The method of described formation light emitting epitaxial layer can select vapour phase epitaxy method (Vapor Phase Epitaxy；Or liquid phase VPE)
Epitaxy (Liquid Phase Epitaxy；Or Organometallic Vapor Phase epitaxy (Metal Organic Vapor LPE)
Epitaxy；MOVPE).The present embodiment preferred MOVPE technique.
Then, with reference to Fig. 6, down etch from p type semiconductor layer 204 surface, form the n type semiconductor layer that local is exposed
202 surfaces, engraving method includes dry-etching or Wet-type etching method, the present embodiment preferred ICP dry method etch technology.Due to mistake
Shallow n type semiconductor layer platform etch depth, easily produces and takes light by N-type around the n type semiconductor layer platform that local is the most exposed
The problem of light absorption of metal electrode, so the etch depth of this step is preferably tried one's best deeply, and coordinates the height of follow-up N-type metal electrode
Degree (the especially matched of the height of metallic reflector and luminescent layer), in order to reduce light absorption of metal electrode, increases that light several
Rate.
Then, with reference to Fig. 7, transparency conducting layer 300 is formed on described p type semiconductor layer 204 surface, transparency conducting layer
The material of 300 can select tin indium oxide (ITO) or zinc oxide (ZnO) or cadmium tin (CTO) or Indium sesquioxide. (InO) or indium
(In) one in doping zinc-oxide (ZnO) or aluminum (Al) doping zinc-oxide (ZnO) or gallium (Ga) doping zinc-oxide (ZnO) or its
Combination, the present embodiment is preferably tin indium oxide (ITO) as current extending.
Finally, with reference to Fig. 8 and Fig. 9, respectively on n type semiconductor layer 202 surface that transparency conducting layer 300 and local are exposed
Making p-type metal electrode and N-type metal electrode, thickness of electrode is 500nm ~ 10 μm.Specifically, first at transparency conducting layer 300
Coat photoresistance glue 600 on n type semiconductor layer 202 surface exposed with local, and by opening electrode pattern light shield, expose electrode window
Mouthful, then redeposited metal electrode structure (only illustrating N-type metal electrode 400, not shown p-type metal electrode in Fig. 8), finally goes
Except photoresist.The deposition process of metal electrode structure can use evaporation or sputter or ald or other plated films
Method, the preferred evaporation coating method of the present embodiment.It should be strongly noted that in order to make electrode structure so that N-type metal electrode is tied
Structure mates with the thickness (highly) of the SQW of luminescent layer, before metal coating technique, needs first to measure n type semiconductor layer platform
The degree of depth, and the height of incorporating quantum trap, then optimize metallic spacer, metallic reflector, metal electrode in N-type metal electrode
The material of each layers such as layer and thickness (highly), so that the height on the 3rd surface of luminescent layer 203 is more than or equal to gold
Belonging to the height of the first surface in reflecting layer 402, the height on the 4th surface of luminescent layer 203 is less than or equal to metallic reflector
The height of the second surface of 402.
It should be noted that the p-type metal electrode of above-described embodiment and N-type metal electrode be by with along with gold-tinted light shield
Technique makes simultaneously, it is also possible to be to be fabricated separately.In p-type, N-type metal electrode, material and the thickness of each corresponding metal level can phases
With, it is also possible to different.Additionally, the N-type metal electrode structure mated with the SQW of luminescent layer should be comprises metallic reflector knot
Structure, and p-type metal electrode can be conventional electrodes structure, or comprise the metal electrode structure of metallic reflector.
From the invention described above embodiment, the present invention is by the n type semiconductor layer platform degree of depth and metallic reflection
The optimization of electrode structure, it is possible to resolve existing light emitting diode construction affects asking of device light extraction efficiency because of light absorption of metal electrode
Topic, thus promote the brightness of light emitting diode.Additionally, use the optimization electrode structure of the present invention, conventional table can not changed
In the case of face metal level (Au) thickness, reduce voltage；Keep the premise of voltage photoelectric characteristic, reduce the thickness of noble metal Au
Degree, thus reduce consumption, reduce cost.
Claims (10)
1. a light emitting diode, comprises: epitaxial substrate；N type semiconductor layer, is positioned on described epitaxial substrate surface；Luminous
Layer, is positioned on described n type semiconductor layer surface, and the upper surface of definition luminescent layer is first surface, and the lower surface of luminescent layer is
Second surface；P type semiconductor layer, is positioned on described luminescent layer first surface；P-type metal electrode, is positioned at described P-type semiconductor
On layer surface；Comprise the N-type metal electrode of metallic reflection Rotating fields, be positioned on the n type semiconductor layer surface that local is exposed,
The upper surface of definition metallic reflection Rotating fields is the 3rd surface, and the lower surface of metallic reflection Rotating fields is the 4th surface；Its feature
It is: the height on described 3rd surface is less than or equal to second more than or equal to the height of first surface, the height on described 4th surface
The height on surface.
A kind of light emitting diode the most according to claim 1, it is characterised in that: the height on described 3rd surface is more than or equal to
The height of first surface, the height on described 4th surface is less than or equal to the height of second surface, to reduce the suction of N-type metal electrode
Light action.
A kind of light emitting diode the most according to claim 1, it is characterised in that: described N-type metal electrode include metal every
Absciss layer, metallic reflector and metal electrode layer.
A kind of light emitting diode the most according to claim 3, it is characterised in that: described N-type metal electrode depends on from bottom to up
Secondary include the first metallic spacer, metallic reflector, the second metallic spacer and metal electrode layer.
A kind of light emitting diode the most according to claim 3, it is characterised in that: described metallic reflector is Al, Ag, Ni,
One in Zn or a combination thereof, its thickness is 50 ~ 1500nm.
A kind of light emitting diode the most according to claim 3, it is characterised in that: described metallic spacer is Cr, Ti, Pt,
The one of Al, Ag, Ni, W or a combination thereof, its thickness is 1 ~ 500nm.
A kind of light emitting diode the most according to claim 3, it is characterised in that: described metallic spacer is multiple-level stack knot
Structure or clad structure.
8. a manufacture method for light emitting diode, including: epitaxial substrate is provided；Form n type semiconductor layer in described epitaxy base
On plate surface；Formation luminescent layer is on described n type semiconductor layer surface, and the upper surface of definition luminescent layer is first surface,
The lower surface of luminescent layer is second surface；Form p type semiconductor layer on described luminescent layer first surface；From P-type semiconductor
Layer surface down forms the n type semiconductor layer surface that local is exposed；Form p-type metal electrode in described p type semiconductor layer surface
On, and formed comprise the N-type metal electrode of the metallic reflection Rotating fields n type semiconductor layer surface exposed in described local it
On, the height on wherein said 3rd surface is more than or equal to the height of first surface, and the height on described 4th surface is less than or equal to the
The height on two surfaces.
The manufacture method of a kind of light emitting diode the most according to claim 8, it is characterised in that: described N-type metal electrode
Including metallic spacer, metallic reflector and metal electrode layer.
The manufacture method of a kind of light emitting diode the most according to claim 8, it is characterised in that: described formation local is the most naked
The method on the n type semiconductor layer surface of dew includes dry-etching or Wet-type etching method.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610844006.6A CN106229400A (en) | 2016-09-23 | 2016-09-23 | A kind of light emitting diode and preparation method thereof |
| PCT/CN2017/097839 WO2018054187A1 (en) | 2016-09-23 | 2017-08-17 | Light-emitting diode and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610844006.6A CN106229400A (en) | 2016-09-23 | 2016-09-23 | A kind of light emitting diode and preparation method thereof |
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| CN106229400A true CN106229400A (en) | 2016-12-14 |
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|---|---|---|---|
| CN201610844006.6A Pending CN106229400A (en) | 2016-09-23 | 2016-09-23 | A kind of light emitting diode and preparation method thereof |
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| CN (1) | CN106229400A (en) |
| WO (1) | WO2018054187A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018054187A1 (en) * | 2016-09-23 | 2018-03-29 | 厦门三安光电有限公司 | Light-emitting diode and manufacturing method therefor |
| CN107863425A (en) * | 2017-11-13 | 2018-03-30 | 佛山市国星半导体技术有限公司 | A kind of LED chip with high reflection electrode and preparation method thereof |
| CN113555481A (en) * | 2021-07-20 | 2021-10-26 | 厦门三安光电有限公司 | Light-emitting diode chip |
| WO2024082074A1 (en) * | 2022-10-21 | 2024-04-25 | 泉州三安半导体科技有限公司 | Micro light-emitting diode and display apparatus having same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569581B (en) * | 2012-02-28 | 2015-07-01 | 江苏新广联科技股份有限公司 | LED chip structure with overlapped electrodes |
| CN102856459B (en) * | 2012-09-06 | 2015-09-16 | 安徽三安光电有限公司 | The passivating method of LED reflection electrode |
| TWI556470B (en) * | 2014-09-23 | 2016-11-01 | 璨圓光電股份有限公司 | Light emitting diode |
| CN106229400A (en) * | 2016-09-23 | 2016-12-14 | 厦门市三安光电科技有限公司 | A kind of light emitting diode and preparation method thereof |
-
2016
- 2016-09-23 CN CN201610844006.6A patent/CN106229400A/en active Pending
-
2017
- 2017-08-17 WO PCT/CN2017/097839 patent/WO2018054187A1/en active Application Filing
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018054187A1 (en) * | 2016-09-23 | 2018-03-29 | 厦门三安光电有限公司 | Light-emitting diode and manufacturing method therefor |
| CN107863425A (en) * | 2017-11-13 | 2018-03-30 | 佛山市国星半导体技术有限公司 | A kind of LED chip with high reflection electrode and preparation method thereof |
| CN107863425B (en) * | 2017-11-13 | 2024-05-31 | 佛山市国星半导体技术有限公司 | LED chip with high-reflection electrode and manufacturing method thereof |
| CN113555481A (en) * | 2021-07-20 | 2021-10-26 | 厦门三安光电有限公司 | Light-emitting diode chip |
| CN113555481B (en) * | 2021-07-20 | 2023-01-17 | 厦门三安光电有限公司 | Light-emitting diode chip |
| WO2024082074A1 (en) * | 2022-10-21 | 2024-04-25 | 泉州三安半导体科技有限公司 | Micro light-emitting diode and display apparatus having same |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018054187A1 (en) | 2018-03-29 |
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Application publication date: 20161214 |