CN204632793U - A kind of novel window layer structure of light-emitting diode - Google Patents
A kind of novel window layer structure of light-emitting diode Download PDFInfo
- Publication number
- CN204632793U CN204632793U CN201520187994.2U CN201520187994U CN204632793U CN 204632793 U CN204632793 U CN 204632793U CN 201520187994 U CN201520187994 U CN 201520187994U CN 204632793 U CN204632793 U CN 204632793U
- Authority
- CN
- China
- Prior art keywords
- layer
- type
- window layer
- emitting diode
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000004411 aluminium Substances 0.000 claims abstract description 19
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 18
- 230000007704 transition Effects 0.000 claims abstract description 12
- 229910005540 GaP Inorganic materials 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 7
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 5
- HTCXJNNIWILFQQ-UHFFFAOYSA-M emmi Chemical compound ClC1=C(Cl)C2(Cl)C3C(=O)N([Hg]CC)C(=O)C3C1(Cl)C2(Cl)Cl HTCXJNNIWILFQQ-UHFFFAOYSA-M 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000002347 injection Methods 0.000 abstract description 4
- 239000007924 injection Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Abstract
The utility model relates to a kind of novel window layer structure of light-emitting diode, belong to LED technology field, for solving current crowding, the technical problem of overtension, provide a kind of structure simple, easy to use, effectively solve the crowding effect under Bulk current injection, reduce the novel window layer structure of the light-emitting diode of voltage, the technical scheme adopted is that GaAs substrate is provided with N-shaped GaAs buffer layer, N-shaped GaAs buffer layer is provided with N-shaped indium phosphide aluminium limiting layer, N-shaped indium phosphide aluminium limiting layer is provided with multiple quantum trap active layer, multiple quantum trap active layer is provided with p-type indium phosphide aluminium limiting layer, p-type indium phosphide aluminium limiting layer is provided with p-type transition zone, p-type transition zone is provided with p-type strain InGaP Window layer, strain InGaP Window layer is also provided with p-type gallium phosphide Window layer, the utility model structure is simple, reduces current crowding, reduces voltage, is widely used in light-emitting diode.
Description
Technical field
The utility model relates to a kind of novel window layer structure of light-emitting diode, belongs to LED technology field.
Background technology
Light-emitting diode (Light-Emitting Diode, LED) is a kind of semiconductor electronic component that can be luminous, has the advantages such as volume is little, energy consumption is low, the life-span is long, environmental and durable.Along with the continuous progress of technology, light-emitting diode be widely used in display, television set daylighting decoration and illumination.In recent years, the research for high-power lighting LED becomes trend, but the light-emitting diode chip for backlight unit of traditional structure exists the shortcomings such as current crowding, overtension and heat radiation difficulty, affects the luminous efficiency of light-emitting diode.The method of conventional raising luminous efficiency has the top regrowth one thick-layer GaP at epitaxial loayer, Window layer, and because GaP energy gap is large, to reddish yellow optical transparency, most light can be gone out in transmission.Roughening treatment is carried out to GaP surface, can total reflection phenomenon be suppressed, reduce the luminescence loss of diode further.But traditional GaP Window layer still can not effectively solve the shortcoming such as current crowding, overtension.
Utility model content
For solving the current crowding of prior art existence, the technical problem of overtension, it is simple that the utility model provides a kind of structure, easy to use, effectively solves the crowding effect under Bulk current injection, reduce the novel window layer structure of the light-emitting diode of voltage.
For achieving the above object, the technical scheme that the utility model adopts is a kind of novel window layer structure of light-emitting diode, comprise: GaAs substrate, described GaAs substrate is provided with N-shaped GaAs buffer layer, described N-shaped GaAs buffer layer is provided with N-shaped indium phosphide aluminium limiting layer, described N-shaped indium phosphide aluminium limiting layer is provided with multiple quantum trap active layer, described multiple quantum trap active layer is provided with p-type indium phosphide aluminium limiting layer, p-type indium phosphide aluminium limiting layer is provided with p-type transition zone, described p-type transition zone is provided with p-type strain InGaP Window layer, described strain InGaP Window layer is also provided with p-type gallium phosphide Window layer.
Preferably, Bragg reflecting layer is provided with between described N-shaped GaAs buffer layer and N-shaped indium phosphide aluminium limiting layer.
Preferably, described p-type transition zone is p-type AlGaInP (AlxGa1-x) 0.5In0.5P material.
Preferably, the thickness of described p-type strain InGaP Window layer is 100-600 Ethylmercurichlorendimide.
Compared with prior art, the utility model has following technique effect: the utility model structure is simple, easy to use, the strain InGaP Window layer that one deck is very thin is added in gallium phosphide Window layer, effectively can solve the crowding effect under Bulk current injection like this, reduce voltage, improve photoelectric properties that are vertical and flip LED chips.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Embodiment
In order to make technical problem to be solved in the utility model, technical scheme and beneficial effect clearly understand, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the utility model, and be not used in restriction the utility model.
As shown in Figure 1, a kind of novel window layer structure of light-emitting diode, comprise: GaAs substrate 1, described GaAs substrate 1 is provided with N-shaped GaAs buffer layer 2, described N-shaped GaAs buffer layer 2 is provided with N-shaped indium phosphide aluminium limiting layer 4, described N-shaped indium phosphide aluminium limiting layer 4 is provided with multiple quantum trap active layer 5, described multiple quantum trap active layer 5 is provided with p-type indium phosphide aluminium limiting layer 6, p-type indium phosphide aluminium limiting layer 6 is provided with p-type transition zone 7, described p-type transition zone 7 is provided with p-type strain InGaP Window layer 8, described p-type strain InGaP Window layer 8 is also provided with p-type gallium phosphide Window layer 9, Bragg reflecting layer 3 is provided with between described N-shaped GaAs buffer layer 2 and N-shaped indium phosphide aluminium limiting layer 4, described p-type transition zone 6 is p-type AlGaInP (AlxGa1-x) 0.5In0.5P material, the thickness of described p-type strain InGaP Window layer 7 is 100-600 Ethylmercurichlorendimide.The strain GaInP material of regrowth one deck 100-600 Ethylmercurichlorendimide after transition zone-(AlxGa1-x) 0.5In0.5P, In component is reduced when namely growing GaxInyP, its component is made to be less than 0.45(y<0.45), the certain thickness GaP material of regrowth, effectively can solve the crowding effect under Bulk current injection like this, reduce voltage, improve photoelectric properties that are vertical and flip LED chips.
The foregoing is only preferred embodiment of the present utility model, not in order to limit the utility model, all do within spirit of the present utility model and principle any amendment, equivalent to replace and improvement etc., all should wrap within the scope of the utility model.
Claims (4)
1. the novel window layer structure of a light-emitting diode, it is characterized in that: comprising: GaAs substrate (1), described GaAs substrate (1) is provided with N-shaped GaAs buffer layer (2), described N-shaped GaAs buffer layer (2) is provided with N-shaped indium phosphide aluminium limiting layer (4), described N-shaped indium phosphide aluminium limiting layer (4) is provided with multiple quantum trap active layer (5), described multiple quantum trap active layer (5) is provided with p-type indium phosphide aluminium limiting layer (6), p-type indium phosphide aluminium limiting layer (6) is provided with p-type transition zone (7), described p-type transition zone (7) is provided with p-type strain InGaP Window layer (8), described strain InGaP Window layer (8) is also provided with p-type gallium phosphide Window layer (9).
2. the novel window layer structure of a kind of light-emitting diode according to claim 1, is characterized in that: be provided with Bragg reflecting layer (3) between described N-shaped GaAs buffer layer (2) and N-shaped indium phosphide aluminium limiting layer (4).
3. the novel window layer structure of a kind of light-emitting diode according to claim 1, is characterized in that: described p-type transition zone (6) is p-type AlGaInP (AlxGa1-x) 0.5In0.5P material.
4. the novel window layer structure of a kind of light-emitting diode according to claim 1, is characterized in that: the thickness of described p-type strain InGaP Window layer (7) is 100-600 Ethylmercurichlorendimide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520187994.2U CN204632793U (en) | 2015-03-31 | 2015-03-31 | A kind of novel window layer structure of light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520187994.2U CN204632793U (en) | 2015-03-31 | 2015-03-31 | A kind of novel window layer structure of light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204632793U true CN204632793U (en) | 2015-09-09 |
Family
ID=54051790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520187994.2U Expired - Fee Related CN204632793U (en) | 2015-03-31 | 2015-03-31 | A kind of novel window layer structure of light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204632793U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105702822A (en) * | 2016-03-30 | 2016-06-22 | 扬州乾照光电有限公司 | Gallium-arsenide-based high-voltage yellow green light-emitting diode (LED) chip and manufacturing method therefor |
| WO2017190622A1 (en) * | 2016-05-05 | 2017-11-09 | 厦门三安光电有限公司 | Gaas-based light emitting diode and manufacturing method therefor |
-
2015
- 2015-03-31 CN CN201520187994.2U patent/CN204632793U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105702822A (en) * | 2016-03-30 | 2016-06-22 | 扬州乾照光电有限公司 | Gallium-arsenide-based high-voltage yellow green light-emitting diode (LED) chip and manufacturing method therefor |
| CN105702822B (en) * | 2016-03-30 | 2017-11-28 | 扬州乾照光电有限公司 | A kind of GaAs base high voltage green-yellow light light-emitting diode chip for backlight unit and preparation method thereof |
| WO2017190622A1 (en) * | 2016-05-05 | 2017-11-09 | 厦门三安光电有限公司 | Gaas-based light emitting diode and manufacturing method therefor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104638068B (en) | A kind of substrat structure and preparation method thereof being used for the growth of III-V group-III nitride | |
| CN103107255B (en) | A kind of LED growing method | |
| CN101540361B (en) | Preparation method of AlGaInP LED grown on silicon base | |
| CN104966769A (en) | Quantum dot LED with dual photonic crystal structure | |
| CN204632793U (en) | A kind of novel window layer structure of light-emitting diode | |
| CN110212067B (en) | GaN-based semiconductor light-emitting device enhanced by three-dimensional cavity hyperbolic metamaterial | |
| CN103137822B (en) | Ultraviolet light-emitting diode structure | |
| CN203721755U (en) | Aluminum/gallium/indium arsenide/phosphide LED with epitaxial surface coarsening layer | |
| CN203165931U (en) | Light emitting diode chip | |
| CN110137326A (en) | A kind of epitaxial structure and preparation method thereof that luminous efficacy can be promoted under low current density | |
| CN205092262U (en) | Led chip | |
| CN103187503A (en) | Efficient light-emitting diode containing metal photonic crystal | |
| CN204651345U (en) | Package structure for LED | |
| CN203850328U (en) | PGaN epitaxial structure of GaN based LED | |
| CN204289526U (en) | Light emitting diode construction | |
| CN203503684U (en) | Light emitting diode epitaxial wafer of normal assembly structure | |
| CN206236701U (en) | A kind of LED package structure | |
| CN103325908A (en) | Method for manufacturing LED epitaxial wafer with hexagonal coarsened surface | |
| CN201773862U (en) | High-brightness light-emitting diode grains | |
| CN201392846Y (en) | Epitaxial AlGaInP LED on silicon substrate | |
| CN201392845Y (en) | AlGaInP LED of sapphire substrate | |
| CN201773861U (en) | Gallium-nitride-based high-brightness light emitting diode provided with serrated pores on lateral face | |
| CN207303131U (en) | The structure of LED of LED chip light extraction can be increased | |
| TW201006003A (en) | A LED that can increase light extraction yield | |
| CN203055972U (en) | A high-efficiency light emitting diode (LED) containing metallic photonic crystals |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150909 |