CN201773862U - High-brightness light-emitting diode grains - Google Patents
High-brightness light-emitting diode grains Download PDFInfo
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- CN201773862U CN201773862U CN2010202786266U CN201020278626U CN201773862U CN 201773862 U CN201773862 U CN 201773862U CN 2010202786266 U CN2010202786266 U CN 2010202786266U CN 201020278626 U CN201020278626 U CN 201020278626U CN 201773862 U CN201773862 U CN 201773862U
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Abstract
The utility model relates to the technical field of semiconductor preparation, and provides high-brightness light-emitting diode (LED) grains with novel structure. The LED comprises a P-face electrode layer, a P-type doped layer, an N-type doped layer, a substrate layer and an N-face electrode layer, wherein the front of the P-type doped layer is provided with a coarsened structure. The P-type doped layer forms the front coarsened structure by using a method of chemical corrosion or the like so as to reduce the light of total internal reflection, increase the area of the luminous area, promote the light emitting efficiency and promote the luminous brightness of the LED.
Description
Technical field
The utility model relates to the semiconductor fabrication technology, a kind of specifically high brightness LED crystal grain with new structure.
Background technology
The wafer that the core of light-emitting diode is made up of P type semiconductor and N type semiconductor has a transition zone between P type semiconductor and N type semiconductor, be called the P-N knot.In the PN junction of some semi-conducting material, the minority carrier of injection and majority carrier compound tense can discharge the form of unnecessary energy with light, thereby electric energy directly is converted to luminous energy.When PN junction applied reverse voltage, minority carrier was difficult to inject, so not luminous.This diode that utilizes the making of injection electroluminescence principle is generally called LED light-emitting diode.When it is in the forward operating state (two ends add forward voltage), when electric current flowed to negative electrode from the LED anode, semiconductor crystal just sent the light from ultraviolet to infrared different colours, the power of light and current related.
Because semi-conducting material and air refraction are widely different, to there not being the semiconductor light emitting crystal grain of encapsulation, at single face emission smooth surface, because very strong inner surface total reflection causes the external quantum efficiency of crystal grain very low.Refractive index as the semi-conducting material gallium nitride is 2.5, and the refractive index of air is 1, and its inner total reflection critical angle (from normal direction to the interface direction) is 23 °, ignores the back side and edge bright dipping, approximately has only 4% light to penetrate from crystal grain is positive.Though the light that reflects back can reflect again, reciprocal back and forth, to add a part of light and penetrate from the side, its total light extraction efficiency is compared internal quantum efficiency still very low (about 15%).The light extraction efficiency of crystal grain has almost determined the luminosity of semiconductor lighting crystal grain.Therefore, its luminosity of the light-emitting diode of prior art manufacturing remains further to be improved.
Summary of the invention
The purpose of this utility model is exactly in order to overcome above-mentioned the deficiencies in the prior art part, and a kind of high brightness LED crystal grain with new structure is provided, and can effectively improve the luminosity of light-emitting diode.
The purpose of this utility model realizes by following technical measures: a kind of high brightness LED crystal grain, comprise p side electrode layer, P type doped layer, N type doped layer, substrate layer and N face electrode layer, and the front of its described P type doped layer is provided with the alligatoring structure.
In technique scheme, described high brightness LED crystal grain cross section is trapezoidal.
The beneficial effects of the utility model are, utilize methods such as chemical corrosion to make P type doped layer form the structure of positive alligatoring, have reduced the light of total internal reflection, have increased the area of luminous zone, thereby have promoted light extraction efficiency, have improved the luminosity of light-emitting diode.
Description of drawings
Fig. 1 is the structural representation of a kind of high brightness LED crystal grain of the utility model.
Fig. 2 is the partial enlarged drawing at A place among Fig. 1.
Wherein: 1.P face electrode layer, 2.P type doped layer, 3.N type doped layer, 4. substrate layer, 5.N face electrode layer, 6. alligatoring structure.
Embodiment
The utility model will be further described below in conjunction with drawings and Examples.
As shown in Figure 1, 2, a kind of high brightness LED crystal grain of present embodiment, its cross section is trapezoidal, comprises p side electrode layer 1, P type doped layer 2, N type doped layer 3, substrate layer 4 and N face electrode layer 5, and the front of its described P type doped layer 2 is provided with alligatoring structure 6.
The related LED crystal particle of the utility model is the intermediate products in the semiconductor light-emitting-diode manufacture process, be to utilize the method for physics or chemical vapour deposition (CVD) on substrate layer 4, to grow P type doped layer 2 and N type doped layer 3, method by evaporation plates N face electrode layer 5 and p side electrode layer 1 respectively on the two sides then, the last method such as chemical corrosion of utilizing again makes P type doped layer 2 form positive alligatoring structure 6, this alligatoring structure 6 can reduce the light of total internal reflection, increase the area of luminous zone, thereby be lifted out optical efficiency, improve luminosity.
Claims (2)
1. a high brightness LED crystal grain comprises p side electrode layer, P type doped layer, N type doped layer, substrate layer and N face electrode layer, and it is characterized in that: the front at P type doped layer is provided with the alligatoring structure.
2. a kind of high brightness LED crystal grain according to claim 1 is characterized in that: described high brightness LED crystal grain cross section is trapezoidal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202786266U CN201773862U (en) | 2010-07-30 | 2010-07-30 | High-brightness light-emitting diode grains |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202786266U CN201773862U (en) | 2010-07-30 | 2010-07-30 | High-brightness light-emitting diode grains |
Publications (1)
| Publication Number | Publication Date |
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| CN201773862U true CN201773862U (en) | 2011-03-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN2010202786266U Expired - Fee Related CN201773862U (en) | 2010-07-30 | 2010-07-30 | High-brightness light-emitting diode grains |
Country Status (1)
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| CN (1) | CN201773862U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104600168A (en) * | 2014-12-31 | 2015-05-06 | 山东浪潮华光光电子股份有限公司 | Preparation method of GaP rough surface on GaAs-based light emitting diode chip |
| CN117438515A (en) * | 2023-12-21 | 2024-01-23 | 江西乾照半导体科技有限公司 | LED chip roughening method and LED chip |
-
2010
- 2010-07-30 CN CN2010202786266U patent/CN201773862U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104600168A (en) * | 2014-12-31 | 2015-05-06 | 山东浪潮华光光电子股份有限公司 | Preparation method of GaP rough surface on GaAs-based light emitting diode chip |
| CN104600168B (en) * | 2014-12-31 | 2017-05-10 | 山东浪潮华光光电子股份有限公司 | Preparation method of GaP rough surface on GaAs-based light emitting diode chip |
| CN117438515A (en) * | 2023-12-21 | 2024-01-23 | 江西乾照半导体科技有限公司 | LED chip roughening method and LED chip |
| CN117438515B (en) * | 2023-12-21 | 2024-03-29 | 江西乾照半导体科技有限公司 | LED chip roughening method and LED chip |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110323 Termination date: 20160730 |