CN201758135U - High-brightness light-emitting diode chip - Google Patents
High-brightness light-emitting diode chip Download PDFInfo
- Publication number
- CN201758135U CN201758135U CN201020281757XU CN201020281757U CN201758135U CN 201758135 U CN201758135 U CN 201758135U CN 201020281757X U CN201020281757X U CN 201020281757XU CN 201020281757 U CN201020281757 U CN 201020281757U CN 201758135 U CN201758135 U CN 201758135U
- Authority
- CN
- China
- Prior art keywords
- light
- layer
- emitting diode
- diode chip
- emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The utility model relates to the technical field of preparation of semiconductors and provides a high-brightness light-emitting diode chip with a novel structure, which comprises an N-surface electrode, an N-type doping layer, a P-type doping layer, a substrate layer and a P-surface electrode layer, wherein an oxide layer is arranged on the surface of the N-type doping layer. The high-brightness light-emitting diode chip utilizes the chemical method to form the oxide layer on the surface of the N-type doping layer; as the surface of the oxide layer is rough, the high-brightness light-emitting diode chip can reduce the total internal reflection light, enlarge the area of a light-emitting region, further upgrade the light-emitting efficiency and improve the light-emitting brightness of a light-emitting diode.
Description
Technical field
The utility model relates to the semiconductor fabrication technology, a kind of specifically high brightness LED crystal grain with new structure.
Background technology
Light-emitting diode is LED (light-emitting diode), is a kind of light emitting semiconductor device that electric energy is converted to luminous energy.It is to be made of a PN junction, has unilateral conduction.After adding forward voltage to light-emitting diode, be injected into the hole in N district from the P district and be injected into the electronics in P district by the N district, near PN junction in several microns respectively with the electronics in N district and the hole-recombination in P district, produce the fluorescence of spontaneous radiation.
Because semi-conducting material and air refraction are widely different, to there not being the semiconductor light emitting crystal grain of encapsulation, at single face emission smooth surface, because very strong inner surface total reflection causes the external quantum efficiency of crystal grain very low.Refractive index as the semi-conducting material gallium nitride is 2.5, and the refractive index of air is 1, and its inner total reflection critical angle (from normal direction to the interface direction) is 23 °, ignores the back side and edge bright dipping, approximately has only 4% light to penetrate from crystal grain is positive.Though the light that reflects back can reflect again, reciprocal back and forth, to add a part of light and penetrate from the side, its total light extraction efficiency is compared internal quantum efficiency still very low (about 15%).The light extraction efficiency of crystal grain has almost determined the luminosity of semiconductor lighting crystal grain.Therefore its luminosity of light-emitting diode of prior art manufacturing remains further to be improved.
Summary of the invention
The purpose of this utility model is exactly in order to overcome above-mentioned the deficiencies in the prior art part, and a kind of high brightness LED crystal grain with new structure is provided, and can effectively improve the luminosity of light-emitting diode.
The purpose of this utility model realizes by following technical measures: a kind of high brightness LED crystal grain, comprise N face electrode layer, N type doped layer, P type doped layer, substrate layer and p side electrode layer, and the surface of its described N type doped layer is provided with oxide layer.
In technique scheme, described high brightness LED crystal grain cross section is trapezoidal.
The beneficial effects of the utility model are, utilize chemical method to form layer of oxide layer on the surface of N type doped layer, because the oxide layer rough surface, therefore reduced the light of total internal reflection, increase the area of luminous zone, thereby be lifted out optical efficiency, improved the luminosity of light-emitting diode.
Description of drawings
Fig. 1 is the structural representation of a kind of high brightness LED crystal grain of the utility model.
Wherein: 1.N face electrode layer, 2.N type doped layer, 3.P type doped layer, 4. substrate layer, 5.P face electrode layer, 6. oxide layer.
Embodiment
The utility model will be further described below in conjunction with drawings and Examples.
As shown in Figure 1, a kind of high brightness LED crystal grain of present embodiment, its cross section is trapezoidal, comprises N face electrode layer 1, N type doped layer 2, P type doped layer 3, substrate layer 4 and p side electrode layer 5, and the surface of its described N type doped layer 2 is provided with oxide layer 6.
The related LED crystal particle of the utility model is the intermediate products in the semiconductor light-emitting-diode manufacture process, be to utilize the method for physics or chemical vapour deposition (CVD) on substrate layer 4, to grow P type doped layer 3 and N type doped layer 2, method by evaporation plates N face electrode layer 1 and p side electrode layer 5 respectively on the two sides then, utilizes chemical method to form layer of oxide layer 6 at last again.Because therefore oxide layer 6 rough surface can reduce positive total reflection, improve luminous efficiency, increase the area of luminous zone, thereby improve luminosity.
Claims (2)
1. a high brightness LED crystal grain comprises N face electrode layer, N type doped layer, P type doped layer, substrate layer and p side electrode layer, and it is characterized in that: the surface at N type doped layer is provided with oxide layer.
2. a kind of high brightness LED crystal grain according to claim 1 is characterized in that: described high brightness LED crystal grain cross section is trapezoidal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201020281757XU CN201758135U (en) | 2010-08-03 | 2010-08-03 | High-brightness light-emitting diode chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201020281757XU CN201758135U (en) | 2010-08-03 | 2010-08-03 | High-brightness light-emitting diode chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201758135U true CN201758135U (en) | 2011-03-09 |
Family
ID=43645425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201020281757XU Expired - Fee Related CN201758135U (en) | 2010-08-03 | 2010-08-03 | High-brightness light-emitting diode chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201758135U (en) |
-
2010
- 2010-08-03 CN CN201020281757XU patent/CN201758135U/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104638068B (en) | A kind of substrat structure and preparation method thereof being used for the growth of III-V group-III nitride | |
| CN102185057B (en) | Nitride LED (light-emitting diode) structure and nitride LED structure preparing method | |
| CN102945902B (en) | Light-emitting diode of photonic crystal structure and application thereof | |
| CN104966769A (en) | Quantum dot LED with dual photonic crystal structure | |
| CN103700735A (en) | Light-emitting diode and manufacturing method thereof | |
| WO2015176532A1 (en) | Preparation method for nitride light-emitting diode assembly | |
| CN102867895A (en) | Epitaxial structure for effectively increasing side light emitting efficiency of LED and manufacture method of epitaxial structure | |
| CN201773862U (en) | High-brightness light-emitting diode grains | |
| CN108231967B (en) | Light emitting diode and preparation method thereof, lighting device | |
| CN203521455U (en) | LED chip | |
| CN201758135U (en) | High-brightness light-emitting diode chip | |
| CN102738347B (en) | White-light LED (light-emitting diode) chip structure with self-assembly nano structure | |
| CN201758137U (en) | High-brightness light-emitting diode crystalline grain | |
| CN110993754B (en) | LED tube core with bionic metal nano island-shaped structure and preparation method thereof | |
| CN203631586U (en) | Light emitting diode with current blocking effect | |
| CN110112272B (en) | LED structure with heteroepitaxial junction type electron blocking layer | |
| CN104425667A (en) | SiC substrate-inverted LED (Light Emitting Diode) chip and preparation method thereof | |
| CN203850328U (en) | PGaN epitaxial structure of GaN based LED | |
| CN201773861U (en) | Gallium-nitride-based high-brightness light emitting diode provided with serrated pores on lateral face | |
| CN102683521B (en) | The manufacture method of light-emitting diode | |
| CN103325908A (en) | Method for manufacturing LED epitaxial wafer with hexagonal coarsened surface | |
| CN204596827U (en) | A kind of light emitting semiconductor device that can improve light efficiency | |
| CN202797055U (en) | Light emitting diode employing N type substrate | |
| TWI568016B (en) | Semiconductor light-emitting device | |
| CN209822687U (en) | Light-emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110309 Termination date: 20160803 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |