CN108231967B - Light emitting diode and preparation method thereof, lighting device - Google Patents
Light emitting diode and preparation method thereof, lighting device Download PDFInfo
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- CN108231967B CN108231967B CN201810004954.8A CN201810004954A CN108231967B CN 108231967 B CN108231967 B CN 108231967B CN 201810004954 A CN201810004954 A CN 201810004954A CN 108231967 B CN108231967 B CN 108231967B
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- 238000002360 preparation method Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 239000002346 layers by function Substances 0.000 claims abstract description 43
- 230000005540 biological transmission Effects 0.000 claims abstract description 27
- 239000010410 layer Substances 0.000 claims description 324
- 230000012010 growth Effects 0.000 claims description 29
- 230000007797 corrosion Effects 0.000 claims description 23
- 238000005260 corrosion Methods 0.000 claims description 23
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 18
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 18
- 230000026267 regulation of growth Effects 0.000 claims description 13
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 2
- 238000000605 extraction Methods 0.000 abstract description 16
- 230000008859 change Effects 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 229910002601 GaN Inorganic materials 0.000 description 44
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 42
- 230000004888 barrier function Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 14
- 239000000243 solution Substances 0.000 description 13
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000011514 reflex Effects 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 241001465382 Physalis alkekengi Species 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The embodiment of the present invention provides a kind of light emitting diode and its manufacturing method and display device.Light emitting diode is provided with including substrate and setting light emitting functional layer over the substrate in the light emitting functional layer for changing the diffuser structure of light transmission path.The present invention in light emitting functional layer by being arranged diffuser structure, diffuser structure can change light transmission path, reduce the total reflection that light occurs in LED internal, and then reduce the loss due to caused by total reflection, light extraction efficiency is improved, external quantum efficiency is increased.Technical measure is succinct, and effect is obvious, easy to implement, is with a wide range of applications.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to a kind of light emitting diode and preparation method thereof, lighting device.
Background technique
Since semiconductor light-emitting-diode (Light Emitting Diode, LED) is simple, small in size with structure, section
Can, efficiently, the advantages that long-lived, light is clear, gradually replaced the traditional lightings lamps and lanterns such as incandescent lamp, fluorescent lamp in recent years, just at
For the main product of illumination market of new generation, the application in electro-optical system is also extremely widespread.Currently, semiconductor light-emitting-diode
It is all utilized in growth light emitting functional layer (also referred to as epitaxial structure) on substrate, substrate includes Sapphire Substrate or gallium nitride base
(GaN) substrate.
Through present inventor the study found that due to substrate refractive index considerably beyond air the refractive index (refraction of GaN
Rate is 2.5, and sapphire refractive index is 1.8), to cause the critical angle being totally reflected in top layer or bottom light-emitting surface too small, light arrives
Up to after top layer or bottom, some light can be totally reflected, so that this some light roundtrip inside LED, or even disappeared
It consumes, greatly reduces light extraction efficiency, so that external quantum efficiency (EQE) is very low under high current density.
Therefore, the light extraction efficiency for how improving LED is this field technical problem urgently to be resolved.
Summary of the invention
The embodiment of the present invention is the technical problem to be solved is that, provide a kind of light emitting diode and preparation method thereof, illumination
Device, with the defect for overcoming existing structure light extraction efficiency low.
In order to solve the above-mentioned technical problem, it the embodiment of the invention provides a kind of light emitting diode, including substrate and sets
Light emitting functional layer over the substrate is set, the diffusion knot for changing light transmission path is provided in the light emitting functional layer
Structure.
Optionally, the light emitting functional layer includes the first active layer set gradually over the substrate, Quantum Well, second
Active layer, ohmic contact layer and conductive layer, the diffuser structure are arranged in the ohmic contact layer.
Optionally, the ohmic contact layer includes the first doped layer and the second doped layer, and the first doped layer setting exists
On second active layer, surface is formed with multiple pyramids of regular array, and second doped layer is arranged described first
On doped layer, the contact surface between first doped layer and the second doped layer is made to form diffuser structure.
Optionally, first active layer includes N-shaped active layer, and second active layer includes p-type active layer, and described
One doped layer includes p-type heavily doped layer, and with a thickness of 20~500nm, second doped layer includes N-shaped heavily doped layer, with a thickness of
20~500nm.
Optionally, the height of the pyramid is 10~2000nm, alternatively, the height of the pyramid is 0.1 λ~5 λ, λ
The wavelength of light is issued for Quantum Well.
The embodiment of the invention also provides a kind of lighting devices, including light emitting diode above-mentioned.
In order to solve the above-mentioned technical problem, the embodiment of the invention also provides a kind of preparation method of light emitting diode, packets
It includes:
Light emitting functional layer is formed on the substrate, is formed in the light emitting functional layer for changing the unrestrained of light transmission path
Penetrate structure.
Optionally, light emitting functional layer is formed on the substrate, is formed in the light emitting functional layer for changing light transmission
The diffuser structure in path, comprising:
Successively one active layer of growth regulation, Quantum Well, the second active layer on substrate；
One doped layer of growth regulation on second active layer carries out wet etching processing to the first doped layer, described
Multiple pyramids of the surface formation rule arrangement of first doped layer；
Two doped layer of growth regulation on first doped layer, makes connecing between first doped layer and the second doped layer
Contacting surface forms diffuser structure.
Optionally, wet etching processing is carried out to the first doped layer, comprising:
It is coated with the potassium hydroxide or phosphoric acid solution of 4~8mol/L on the surface of the first doped layer, corrodes 2~30min, makes
Multiple pyramids of the surface formation rule arrangement of first doped layer, corrosion depth is 10~2000nm, alternatively, corrosion is deep
Degree is the λ of 0.1 λ~5, and λ is the wavelength that Quantum Well issues light
Optionally, successively one active layer of growth regulation, Quantum Well, the second active layer on substrate, comprising: on substrate successively
Growing n-type active layer, Quantum Well, p-type active layer.
Optionally, one doped layer of growth regulation on second active layer, comprising: growth thickness is on p-type active layer
The p-type heavily doped layer of 20~500nm.
Optionally, two doped layer of growth regulation on first doped layer, comprising: the growth thickness on p-type heavily doped layer
For the N-shaped heavily doped layer of 20~500nm.
Light emitting diode and its manufacturing method provided by the embodiment of the present invention and display device, by light emitting functional layer
Interior setting diffuser structure, diffuser structure can change light transmission path, reduce light occur in LED internal it is complete
Reflection, and then the loss due to caused by total reflection is reduced, light extraction efficiency is improved, external quantum efficiency is increased.In a reality
It applies in example, diffuser structure is located at tunnel knot interface, influence of the diffuser structure to Ohmic contact quality is reduced, using corrosion p
The tunnel junction structure of N-shaped heavily doped layer is covered behind the surface of type heavily doped layer, can be n by LED device surface conversion
Type heavily doped layer reduces the ohmic contact resistance of light emitting diode entirety, avoids due to p-type heavily doped layer carrier concentration
The problems such as Ohmic contact contact resistance is big caused by low, contact resistance is unstable, while processing step is simplified, reduce production
Cost.Technical measure is succinct, and effect is obvious, easy to implement, is with a wide range of applications.
Certainly, implement any of the products of the present invention or method it is not absolutely required at the same reach all the above excellent
Point.Other features and advantages of the present invention will illustrate in subsequent specification embodiment, also, partly implement from specification
It is become apparent in example, or understand through the implementation of the invention.The purpose of the embodiment of the present invention and other advantages can pass through
Specifically noted structure is achieved and obtained in the specification, claims and drawings.
Detailed description of the invention
Attached drawing is used to provide to further understand technical solution of the present invention, and constitutes part of specification, with this
The embodiment of application technical solution for explaining the present invention together, does not constitute the limitation to technical solution of the present invention.Attached drawing
In the shapes and sizes of each component do not reflect actual proportions, purpose is schematically illustrate the content of present invention.
Fig. 1 is the structural schematic diagram of light emitting diode of the embodiment of the present invention；
Fig. 2 is the structural schematic diagram of light emitting diode first embodiment of the present invention；
Fig. 3 is that first embodiment of the invention forms the schematic diagram after light emitting structure layer；
Fig. 4 is the schematic diagram after first embodiment of the invention corrosion treatment；
Fig. 5 is that first embodiment of the invention forms the schematic diagram after light emitting functional layer；
Fig. 6 is that first embodiment of the invention forms the schematic diagram after two step surfaces of height；
Fig. 7 is that first embodiment of the invention forms the schematic diagram after first electrode and second electrode；
Fig. 8 is the structural schematic diagram of light emitting diode second embodiment of the present invention；
Fig. 9 is the structural schematic diagram of light emitting diode 3rd embodiment of the present invention.
Description of symbols:
1-substrate；2-light emitting functional layers；3-first electrodes；
4-second electrodes；5-diffuser structures；21-the first contact layer；
22-the first active layer；23-Quantum Well；24-electronic barrier layers；
25-the second active layer；26-p-type heavily doped layers；27-N-shaped heavily doped layers；
28-the second contact layer；29-conductive layers.
Specific embodiment
Specific embodiments of the present invention will be described in further detail with reference to the accompanying drawings and examples.Following embodiment
For illustrating the present invention, but it is not intended to limit the scope of the invention.It should be noted that in the absence of conflict, the application
In embodiment and embodiment in feature can mutual any combination.
For the defect for overcoming existing light emitting diode construction light extraction efficiency low, the embodiment of the invention provides one kind to shine
Diode.Fig. 1 is the structural schematic diagram of light emitting diode of the embodiment of the present invention.As shown in Figure 1, the main structure of light emitting diode
Including substrate 1, the light emitting functional layer 2 on substrate 1 is set, first electrode 3 and second electrode in light emitting functional layer 2 are set
4, the diffuser structure 5 for changing light transmission path is provided in light emitting functional layer 2.Wherein, substrate 1 is used as light emitting diode
Substrate, respectively as the contact electrode of light emitting functional layer 2, light emitting functional layer 2 is used for for first electrode 3 and second electrode 4
One electrode 3 and the effect of 4 voltage of second electrode are lower luminous, and change light in light emitting functional layer by diffuser structure 5 therein
The path of portion's transmission.
The embodiment of the invention provides a kind of light emitting diodes to be diffused by the way that diffuser structure is arranged in light emitting functional layer
Structure can change light transmission path, reduce the total reflection that light occurs in LED internal, and then reduce due to complete
Loss caused by reflection, improves light extraction efficiency, increases external quantum efficiency.
Below by the technical solution of specific embodiment the present invention will be described in detail embodiment light emitting diode.
First embodiment
Fig. 2 is the structural schematic diagram of light emitting diode first embodiment of the present invention.As shown in Fig. 2, the present embodiment luminous two
The main structure of pole pipe includes gallium nitride substrate 1, and the light emitting functional layer 2 on gallium nitride substrate 1 is arranged in, and is arranged in light-emitting function
First electrode 3 and second electrode 4 on layer 2, light emitting functional layer 2 include successively the first of epitaxial growth on gallium nitride substrate 1
Active layer 22, Quantum Well 23, the second active layer 25, ohmic contact layer and conductive layer 29, diffuser structure 5 are arranged in ohmic contact layer
In.Wherein, the Quantum Well 23 on gallium nitride substrate 1, as photosphere out is set as the first active layer 22 of electron injecting layer
It is arranged on the first active layer 22, the second active layer 25 as hole injection layer is arranged in Quantum Well 23, for providing load
Flow sub- hole.Ohmic contact layer and conductive layer 29 are successively set on the second active layer 25, and ohmic contact layer is for making second to have
Good Ohmic contact is formed between active layer 25 and first electrode 3.Light emitting functional layer 2 be formed with height two step surfaces, first
Electrode 3 is arranged on the conductive layer 2 of high step surface, and second electrode 4 is arranged on the first active layer 22 of low step surface.This implementation
In example, ohmic contact layer includes p-type heavily doped layer 26 and N-shaped heavily doped layer 27, p-type heavily doped layer 26 and N-shaped heavily doped layer 27
Between contact surface form diffuser structure 5, diffuser structure 5 reduces light in light emitting diode for changing light transmission path
The total reflection that portion occurs, and then the loss due to caused by total reflection is reduced, light extraction efficiency is improved, outer quantum effect is increased
Rate.
In the present embodiment, diffuser structure 5 is handled by wet etching and is realized.By using potassium hydroxide (KOH) or phosphoric acid
(H3PO4) etc. solution corrosions p-type heavily doped layer 26 surface so that p-type heavily doped layer 26 surface present regular array pyramid
Shape, such as hexagonal pyramid or 12 pyramid figures form the diffuser structure 5 for changing light transmission path.When work, Quantum Well 23 is sent out
Light out reach occur after hexagonal pyramid or 12 pyramid figures between p-type heavily doped layer 26 and N-shaped heavily doped layer 27 reflection or
Refraction, light transmission path changes, so that the angle of reflection for being reflected into 1 glazed thread of gallium nitride substrate also changes, occurs
The probability of total reflection greatly reduces, and reflects extraneous probability and greatly increases, light will not follow back and forth between top layer and bottom
Ring reflection improves light extraction efficiency so that be consumed, and increases external quantum efficiency.
In the present embodiment, the height h=0.1 λ of λ~5 of hexagonal pyramid or 12 pyramids, at this point, light emitting diode goes out light efficiency
Rate is more than twice of traditional structure light extraction efficiency.Wherein, h is pyramid bottom to the distance at top, i.e. p-type heavily doped layer surface quilt
The depth of corrosion, λ are the wavelength that Quantum Well issues light.
In the present embodiment, for the stress that buffer lattice mismatch generates, the light emitting functional layer of the present embodiment can also include
First boundary layer, the first contact layer are arranged between gallium nitride substrate 1 and the first active layer 22.In order to stop to overflow in Quantum Well 23
Electronics out, the light emitting functional layer of the present embodiment can also include electronic barrier layer, electronic barrier layer setting Quantum Well 23 with
Between second active layer 25.In addition, the light emitting functional layer of the present embodiment can also include the second contact layer, the setting of the second contact layer
Between N-shaped heavily doped layer 27 and conductive layer 29.
The technical solution of the present embodiment is further illustrated below by the preparation process of light emitting diode.Wherein, this implementation
Example growth can use mocvd method.
(1) first on gallium nitride substrate 1 growth thickness be 20~30nm low temperature nitride gallium layer, growth temperature be 500~
550 DEG C, growth pressure is 300~700mbar.Then growth thickness is that the non-of 1000~2000nm is mixed on low temperature nitride gallium layer
Miscellaneous gallium nitride layer, growth temperature are 1000~1100 DEG C, and growth pressure is 200~500mbar.Wherein, low temperature nitride gallium layer is made
For stress release layer, undoped gallium nitride layer is as buffer layer, low temperature nitride gallium layer and undoped gallium nitride layer together as this
First contact layer 21 of embodiment, the stress generated with buffer lattice mismatch.Preferably, low temperature nitride gallium layer with a thickness of
25nm, undoped gallium nitride layer with a thickness of 1500nm.In the present embodiment, substrate of the gallium nitride substrate as light emitting diode,
With a thickness of 15~200 μm.
Then, the first active layer 22 that growth thickness is 1000~3000nm on undoped gallium nitride layer.The present embodiment
In, the first active layer 22 is N-shaped active layer, using the gallium nitride of n-type doping, as electron injecting layer, growth temperature 1000
~1200 DEG C, growth pressure is 100~500Torr, and impurity is elemental silicon, and doping concentration is 5 × 10l8/cm3.Preferably,
First active layer 22 with a thickness of 2000nm.
Then, the grown quantum trap 23 on the first active layer 22 goes out photosphere as light emitting diode, and Quantum Well 23 includes
The InGaN potential well layer and gallium nitride barrier layer of multiple period alternating growths, InGaN potential well layer is with a thickness of 1~4nm, nitrogen
Change gallium barrier layer thickness is 3~10nm, and InGaN potential well layer and gallium nitride barrier layer are unintentional doping.Preferably, nitrogen
Change indium gallium potential well layer with a thickness of 2.5nm, gallium nitride barrier layer with a thickness of 5nm, Quantum Well number is at least 5 periods.
Then, electronic barrier layer 24 is grown in Quantum Well 23.In the present embodiment, electronic barrier layer 24 is for stopping quantum
The electronics overflowed in trap 23, using the aluminium gallium nitride alloy of p-type doping, with a thickness of 10~30nm, dopant is magnesium Mg, and doping concentration is
3×10l9/cm3, the group of aluminium is divided into 0.2 in aluminium gallium nitride alloy, and growth temperature is 950~1000 DEG C, and growth pressure is 150~
400mbar.Preferably, electronic barrier layer 24 with a thickness of 20nm.
Then, two active layer 25 of growth regulation on electronic barrier layer 24.In the present embodiment, the second active layer 25 has for p-type
Active layer, as hole injection layer, for providing carrier hole, with a thickness of 50~150nm, is mixed using the gallium nitride of p-type doping
Miscellaneous dose is magnesium Mg, and doping concentration is 3 × 10l9/cm3, growth temperature is 900~1000 DEG C, and growth pressure is 100~500mbar.
Preferably, the second active layer 25 with a thickness of 100nm.
After LED technique production by aforesaid standards, light emitting structure layer is formed on gallium nitride substrate, as shown in Figure 3.
(2) p-type heavily doped layer 26 is grown on the second active layer 25.P-type weight in the present embodiment, as tunnel knot lower layer
Doped layer 26 uses p-type heavy blended gallium nitride, and with a thickness of 20~500nm, dopant is magnesium Mg, and doping concentration is 1 × 1020/
cm3, growth temperature is 800~900 DEG C, and growth pressure is 100~400mbar.
Then, it is coated with the potassium hydroxide solution of 4~8mol/L on the surface of p-type heavily doped layer 26, carries out corrosion treatment,
Etching time is 2~30min, makes the surface of p-type heavily doped layer 26 that multiple hexagonal pyramid shapes of regular array be presented after corrosion treatment
Figure, as shown in Figure 4.In the present embodiment, height (i.e. corrosion depth) h of hexagonal pyramid is 10~2000nm.Preferably, corrosion is deep
Degree h is 100~800nm.In addition, corrosion depth h can issue the wavelength of light according to Quantum Well to be arranged, corrosion depth is 0.1 λ
~5 λ, λ are the wavelength that Quantum Well issues light.Preferably, corrosion depth h is the λ of 0.5 λ~2.5, potassium hydroxide solution 6mol/L.
When actual implementation, it can also make the surface of p-type heavily doped layer 26 that multiple 12 ribs of regular array be presented using solution such as phosphoric acid
Diagram cone shape.Gallium nitride material chemical property is stablized, and is not easily decomposed under room temperature, but in potassium hydroxide (KOH) or phosphoric acid (H3PO4) molten
It can be dissolved in liquid, and it is anisotropic for corroding, therefore multiple hexagonal pyramids or 12 of regular array can be presented on its surface
The cone cells figure such as pyramid.
(3) after being cleaned to the surface of p-type heavily doped layer 26, the epitaxial growth N-shaped heavy doping on p-type heavily doped layer 26
Layer 27 makes p-type heavily doped layer 26 and N-shaped heavily doped layer 27 form tunnel knot, and p-type heavily doped layer 26 and N-shaped heavily doped layer 27
Between contact surface formed diffuser structure 5.In the present embodiment, N-shaped heavily doped layer 27 uses N-shaped InGaN, with a thickness of 20~
500nm, dopant are silicon Si, and doping concentration is 1 × 1020/cm3~3 × 1020/cm3, indium In group is divided into 0.1~0.3, growth temperature
Degree is 700~900 DEG C, and growth pressure is 100~500mbar.
Then, two contact layer 28 of growth regulation on N-shaped heavily doped layer 27.In the present embodiment, the second contact layer 28 uses N-shaped
Gallium nitride, dopant are silicon Si, and doping concentration is 1 × 1020/cm3~3 × 1020/cm3, growth temperature is 700~900 DEG C, raw
Long pressure is 100~500mbar.
Then, it deposits or sputters on the second contact layer 28 and form conductive layer 29.In the present embodiment, conductive layer 29 can be adopted
With tin indium oxide ITO or indium zinc oxide IZO, 90% or more can achieve to the transmissivity of visible light, therefore can be improved hair
The luminous efficiency of optical diode.
After previous process makes, light emitting functional layer is formed on gallium nitride substrate, as shown in Figure 5.
(4) using etching technics be sequentially etched conductive layer 29, contact layer 28, N-shaped heavily doped layer 27, p-type heavily doped layer 26,
Second active layer 25, electronic barrier layer 24, Quantum Well 23 and the first active layer 22, so that light emitting functional layer forms two platforms of height
Terrace, as shown in Figure 6.Wherein, the first active layer 22, Quantum Well 23, electronic barrier layer 24, the second active layer 25, p-type heavy doping
Layer 26, N-shaped heavily doped layer 27, contact layer 28 and conductive layer 29 form higher step surface.
(5) it finally, two step surfaces in light emitting functional layer complete first electrode 3 and second electrode 4 makes, is formed and is shone
Diode, as shown in Figure 7.Wherein, first electrode 3 and second electrode 4 can be using the methods of magnetron sputtering or electron beam evaporation
Deposition, material can use titanium-aluminium-titanium-billon or ni-au alloy.In the present embodiment, first electrode and second electrode are used
Material it is identical.When actual implementation, the material that first electrode and second electrode use be can also be different.When actual implementation, may be used also
To include the steps that being formed protective layer, first electrode and second electrode are completely covered protective layer.Wherein, protective layer can use
Paraffin or photoresist.
A kind of light emitting diode is present embodiments provided, corrosion treatment is carried out by the surface to p-type heavily doped layer, makes p
Multiple pyramids of regular array, the contact between p-type heavily doped layer and N-shaped heavily doped layer is presented in the surface of type heavily doped layer
Face forms diffuser structure, and the light that Quantum Well issues occurs when reaching the diffuser structure between p-type heavily doped layer and N-shaped heavily doped layer
Reflection or refraction, light transmission path change, and the angle of reflection reflexed on gallium nitride substrate also changes, and is all-trans
The probability penetrated greatly reduces, and reflects extraneous probability and greatly increases, and light will not circulation be anti-back and forth between top layer and bottom
It penetrates so that be consumed, thus improve light extraction efficiency, increases external quantum efficiency.
Since the present embodiment corrodes contact of the diffuser structure to be formed between p-type heavily doped layer and N-shaped heavily doped layer
On face, that is, it is located at tunnel knot interface, thus reduces influence of the diffuser structure to Ohmic contact quality.The present embodiment is using rotten
The tunnel junction structure that N-shaped heavily doped layer is covered behind the surface of erosion p-type heavily doped layer, can be by LED device surface conversion
For N-shaped heavily doped layer, since the contact resistance of N-shaped heavily doped layer is less than the contact resistance of p-type heavily doped layer, thus hair is reduced
The ohmic contact resistance of optical diode entirety is avoided since Ohmic contact caused by p-type heavily doped layer carrier concentration is low connects
The problems such as electric shock resistance is big, contact resistance is unstable.Further, since upper table surface has been converted into N-shaped, so that upper and lower two steps
Face is N-shaped, therefore can use identical metal material for coplanar type LED, first electrode and second electrode, simplifies work
Skill step, reduces production cost.The present embodiment technological means is succinct, and effect is obvious, easy to implement, before having a wide range of applications
Scape.
This embodiment scheme is equally applicable to the light emitting diode using sapphire as substrate, same that there is raising LED to go out light
The technical effect of efficiency.Using gallium nitride as substrate, the lattice that can reduce gallium nitride based light emitting diode loses the present embodiment
With degree and dislocation density.
Second embodiment
Fig. 8 is the structural schematic diagram of light emitting diode second embodiment of the present invention.As shown in figure 8, the present embodiment luminous two
The main structure of pole pipe includes gallium nitride substrate 1, and the light emitting functional layer 2 on gallium nitride substrate 1 is arranged in, and is arranged in light-emitting function
First electrode 3 and second electrode 4 on layer 2, light emitting functional layer 2 include successively the first of epitaxial growth on gallium nitride substrate 1
Contact layer 21, the first active layer 22, Quantum Well 23, the second active layer 25 and conductive layer 29, the setting of diffuser structure 5 is in the first contact
In layer 21.First contact layer 21 includes stress release layer 21a and buffer layer 21b, between stress release layer 21a and buffer layer 21b
Contact surface form diffuser structure 5, diffuser structure 5 reduces light and goes out in LED internal for changing light transmission path
It is now totally reflected, and then reduces the loss due to caused by total reflection, improve light extraction efficiency, increase external quantum efficiency.
In the present embodiment, stress release layer 21a uses low temperature nitride gallium, and with a thickness of 20~30nm, buffer layer 21b is using non-
Doped gallium nitride, with a thickness of 1000~2000nm.Preferably, stress release layer 21a with a thickness of 25nm, the thickness of buffer layer 21b
Degree is 1500nm.Diffuser structure 5 is realized by the corrosion stress surface releasing layer 21a.By using potassium hydroxide (KOH) or phosphorus
Acid (H3PO4) etc. solution corrosions stress release layer 21a surface so that stress release layer 21a surface present regular array rib
Taper, such as hexagonal pyramid or 12 pyramid figures, subsequent grown buffer layer, between stress release layer 21a and buffer layer 21b
The diffuser structure 5 for changing light transmission path is formed on contact surface.When work, the light that Quantum Well 23 issues reaches stress release layer
Reflection occurs after hexagonal pyramid or 12 pyramid figures between 21a and buffer layer 21b or refraction, light transmission path change
Become, the angle of reflection reflexed on gallium nitride substrate 1 also changes, and the probability for occurring being totally reflected greatly reduces, and reflects the external world
Probability greatly increase, will not between top layer and bottom back and forth Circulated reflection so that being consumed, thus improve out light
Efficiency increases external quantum efficiency.
In the present embodiment, each film layer structure and material are identical as aforementioned first embodiment, can also be in Quantum Well 23 and
Electronic barrier layer is set between two active layers 25, ohmic contact layer and second is set between the second active layer 25 and conductive layer 29
Contact layer, which is not described herein again.The preparation method of the present embodiment and aforementioned first embodiment are essentially identical, the difference is that rotten
Erosion processing is the surface for stress release layer 21a.
Technical solution through this embodiment can be seen that the present embodiment and be corroded by the surface to stress release layer
It handles, forms the diffuser structure for changing light transmission path, Quantum Well on the contact surface between stress release layer and buffer layer
Reflection occurs when reaching diffuser structure for the light of sending or refraction, light transmission path change, reflex on gallium nitride substrate
Angle of reflection also change, the probability for occurring being totally reflected greatly reduces, and reflects extraneous probability and greatly increases, will not push up
Circulated reflection increases external quantum efficiency so that be consumed, thus improve light extraction efficiency back and forth between layer and bottom.
3rd embodiment
Fig. 9 is the structural schematic diagram of light emitting diode 3rd embodiment of the present invention.As shown in figure 9, the present embodiment luminous two
The main structure of pole pipe includes gallium nitride substrate 1, and the light emitting functional layer 2 on gallium nitride substrate 1 is arranged in, and is arranged in light-emitting function
First electrode 3 and second electrode 4 on layer 2, light emitting functional layer 2 include successively the first of epitaxial growth on gallium nitride substrate 1
Active layer 22, Quantum Well 23, the second active layer 25, the second contact layer 28 and conductive layer 29, diffuser structure setting is in the second contact
On contact surface between layer 28 and conductive layer 29, diffuser structure 5 reduces light in light emitting diode for changing light transmission path
Inside is totally reflected, and then reduces the loss due to caused by total reflection, improves light extraction efficiency, increases outer quantum effect
Rate.
In the present embodiment, the second contact layer 28 uses the gallium nitride of heavy doping, with a thickness of 10~30nm, doping concentration 1
×1020/cm3~3 × 1020/cm3.Diffuser structure 5 is realized by corrosion 28 surface of the second contact layer.By using hydroxide
Potassium (KOH) or phosphoric acid (H3PO4) etc. the second contact layer of solution corrosions 28 surface so that the second contact layer 28 surface present rule
The pyramid then arranged, such as hexagonal pyramid or 12 pyramid figures.Then deposition conductive layer 29, in the second contact layer 28 and conduction
The diffuser structure 5 for changing light transmission path is formed on contact surface between layer 29.The light that Quantum Well 23 issues is to diffuser structure 5
Reflection occurs afterwards or refraction, light transmission path change, the angle of reflection reflexed on gallium nitride substrate 1 also changes,
The probability for occurring being totally reflected greatly reduces, and reflects extraneous probability and greatly increases, will not follow back and forth between top layer and bottom
Ring reflection improves light extraction efficiency so that be consumed, and increases external quantum efficiency.
In the present embodiment, each film layer structure and material are identical as aforementioned first embodiment, can be in gallium nitride substrate 1 and
First contact layer is set between one active layer 22, electronic blocking can also be set between Quantum Well 23 and the second active layer 25
Layer, which is not described herein again.The preparation method of the present embodiment and aforementioned first embodiment are essentially identical, the difference is that at corrosion
Reason is the surface for the second contact layer 28.
Technical solution through this embodiment can be seen that the present embodiment and be corroded by the surface to the second contact layer
It handles, forms the diffuser structure for changing light transmission path, Quantum Well on the contact surface between the second contact layer and conductive layer
Reflection occurs when reaching diffuser structure for the light of sending or refraction, light transmission path change, reflex on gallium nitride substrate
Angle of reflection also change, the probability for occurring being totally reflected greatly reduces, and reflects extraneous probability and greatly increases, will not push up
Circulated reflection increases external quantum efficiency so that be consumed, thus improve light extraction efficiency back and forth between layer and bottom.This
Outside, while the contact surface between the second contact layer and conductive layer is formed diffuser structure by the present embodiment, increase the contact of the two
Area increases the binding force of the two, has certain help to the promotion of Ohmic contact quality.
When actual implementation, the present invention includes that the light emitting functional layer of diffuser structure is not limited to the structure type of previous embodiment,
Various deformation and adjustment can be realized under the technology of the present invention thinking.From the angle for changing light transmission path, diffuser structure can
It to be arranged between two layers of arbitrary neighborhood, also can be set in a certain layer, thus can be designed according to actual needs.
In addition it is also possible to which reflecting layer is arranged in the film layer far from light-emitting surface, reflecting layer combines with diffuser structure improves out light
Efficiency.
Fourth embodiment
Technical concept based on previous embodiment, the embodiment of the invention also provides a kind of preparation sides of light emitting diode
Method.The preparation method of light emitting diode includes:
Light emitting functional layer is formed on the substrate, is formed in the light emitting functional layer for changing the unrestrained of light transmission path
Penetrate structure.
Wherein, light emitting functional layer is formed on the substrate includes:
S1, on substrate successively one active layer of growth regulation, Quantum Well, the second active layer；
S2, one doped layer of growth regulation on second active layer carry out wet etching processing to the first doped layer, the
Multiple pyramids of the surface formation rule arrangement of one doped layer；
S3, two doped layer of growth regulation on first doped layer, make between first doped layer and the second doped layer
Contact surface formed diffuser structure.
Wherein, wet etching processing is carried out to the first doped layer in step S2, comprising:
It is coated with the potassium hydroxide or phosphoric acid solution of 4~8mol/L on the surface of the first doped layer, corrodes 2~30min, makes
Multiple pyramids of the surface formation rule arrangement of first doped layer, corrosion depth is 10~2000nm, alternatively, corrosion is deep
Degree is the λ of 0.1 λ~5, and λ is the wavelength that Quantum Well issues light.
Wherein, first active layer includes N-shaped active layer, and second active layer includes p-type active layer, and described first
Doped layer includes p-type heavily doped layer, and with a thickness of 20~500nm, second doped layer includes N-shaped heavily doped layer, with a thickness of 20
~500nm.
5th embodiment
A kind of lighting device is present embodiments provided, the light emitting diode including previous embodiment.Lighting device can be with
Backlight as display devices such as liquid crystal display panel, LCD TV, liquid crystal display, mobile phone, tablet computers.
In the description of the embodiment of the present invention, it is to be understood that term " middle part ", "upper", "lower", "front", "rear",
The orientation or positional relationship of the instructions such as "vertical", "horizontal", "top", "bottom" "inner", "outside" be orientation based on the figure or
Positional relationship is merely for convenience of description of the present invention and simplification of the description, rather than the device or element of indication or suggestion meaning must
There must be specific orientation, be constructed and operated in a specific orientation, therefore be not considered as limiting the invention.
In the description of the embodiment of the present invention, it should be noted that unless otherwise clearly defined and limited, term " peace
Dress ", " connected ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integrally
Connection；It can be mechanical connection, be also possible to be electrically connected；Can be directly connected, can also indirectly connected through an intermediary,
It can be the connection inside two elements.For the ordinary skill in the art, above-mentioned art can be understood with concrete condition
The concrete meaning of language in the present invention.
Although disclosed herein embodiment it is as above, the content only for ease of understanding the present invention and use
Embodiment is not intended to limit the invention.Technical staff in any fields of the present invention is taken off not departing from the present invention
Under the premise of the spirit and scope of dew, any modification and variation, but the present invention can be carried out in the form and details of implementation
Scope of patent protection, still should be subject to the scope of the claims as defined in the appended claims.
Claims (7)
1. a kind of light emitting diode, which is characterized in that described including the light emitting functional layer of substrate and setting over the substrate
It is provided in light emitting functional layer for changing the diffuser structure of light transmission path；
The light emitting functional layer includes the first active layer set gradually over the substrate, Quantum Well, the second active layer, ohm
Contact layer and conductive layer, the diffuser structure are arranged in the ohmic contact layer；
The ohmic contact layer includes the first doped layer and the second doped layer, and the first doped layer setting is active described second
On layer, surface is formed with multiple pyramids of regular array, and second doped layer is arranged on first doped layer, makes institute
The contact surface stated between the first doped layer and the second doped layer forms diffuser structure.
2. light emitting diode according to claim 1, which is characterized in that first active layer includes N-shaped active layer, institute
Stating the second active layer includes p-type active layer, and first doped layer includes p-type heavily doped layer, described with a thickness of 20~500nm
Second doped layer includes N-shaped heavily doped layer, with a thickness of 20~500nm.
3. light emitting diode according to claim 1 or 2, which is characterized in that the height of the pyramid be 10~
2000nm, alternatively, the height of the pyramid is the λ of 0.1 λ~5, λ is the wavelength that Quantum Well issues light.
4. a kind of lighting device, which is characterized in that including the light emitting diode as described in claims 1 to 3 is any.
5. a kind of preparation method of light emitting diode characterized by comprising
Light emitting functional layer is formed on the substrate, the diffusion knot for changing light transmission path is formed in the light emitting functional layer
Structure, comprising:
Successively one active layer of growth regulation, Quantum Well, the second active layer on substrate；
P-type heavily doped layer is grown on second active layer, wet etching processing is carried out to p-type heavily doped layer, in the p-type
Multiple pyramids of the surface formation rule arrangement of heavily doped layer；
The growing n-type heavily doped layer on the p-type heavily doped layer makes connecing between the p-type heavily doped layer and N-shaped heavily doped layer
Contacting surface forms diffuser structure.
6. preparation method according to claim 5, which is characterized in that carry out wet etching processing, packet to p-type heavily doped layer
It includes:
It is coated with the potassium hydroxide or phosphoric acid solution of 4~8mol/L on the surface of p-type heavily doped layer, corrodes 2~30min, makes institute
Multiple pyramids of the surface formation rule arrangement of p-type heavily doped layer are stated, corrosion depth is 10~2000nm, alternatively, corrosion is deep
Degree is the λ of 0.1 λ~5, and λ is the wavelength that Quantum Well issues light.
7. preparation method according to claim 5 or 6, which is characterized in that
Successively one active layer of growth regulation, Quantum Well, the second active layer on substrate, comprising: successively growing n-type is active on substrate
Layer, Quantum Well, p-type active layer；
P-type heavily doped layer is grown on second active layer, comprising: growth thickness is 20~500nm's on p-type active layer
P-type heavily doped layer；
The growing n-type heavily doped layer on the p-type heavily doped layer, comprising: on p-type heavily doped layer growth thickness be 20~
The N-shaped heavily doped layer of 500nm.
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