CN203055972U - A high-efficiency light emitting diode (LED) containing metallic photonic crystals - Google Patents
A high-efficiency light emitting diode (LED) containing metallic photonic crystals Download PDFInfo
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- CN203055972U CN203055972U CN 201220660553 CN201220660553U CN203055972U CN 203055972 U CN203055972 U CN 203055972U CN 201220660553 CN201220660553 CN 201220660553 CN 201220660553 U CN201220660553 U CN 201220660553U CN 203055972 U CN203055972 U CN 203055972U
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- 239000004038 photonic crystal Substances 0.000 title claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 7
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 abstract description 2
- 230000002776 aggregation Effects 0.000 abstract 1
- 238000004220 aggregation Methods 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 10
- 238000000605 extraction Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
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Abstract
A high-efficiency light emitting diode (LED) containing metallic photonic crystals is characterized in that the high-efficiency LED is composed of a substrate (1), an n-type layer (2), a multi-quantum well (3), a p-type layer (4), and the metallic photonic crystals (5). The metallic photonic crystals (5) are located on the p-type layer (4). By virtue of utilizing surface plasmon resonance effects and energy aggregation effects of the metallic photonic crystals and simultaneously utilizing photonic band gap light-guiding characteristics of the metallic photonic crystals, divergence angles of outgoing light beams of the LED are decreased and the light emitting efficiency of the LED is substantially increased.
Description
Technical field
The utility model relates to a kind of light-emitting diode of containing metal photonic crystal, belongs to the semiconductor photoelectronic device technical field.
Background technology
Light-emitting diode (Light Emitting Diode, LED) be called as the 4th generation lighting source or green light source, have characteristics such as energy-saving and environmental protection, the life-span is long, volume is little, can be widely used in fields such as various indications, demonstration, decoration, backlight, general lighting and urban landscape.But because semi-conducting material and the air of LED active layer are in a ratio of high index of refraction, total reflection will take place at the interface of LED medium and air in light, the outgoing of light seriously is limited by total reflection phenomenon in the LED at how parallel interface structure, cause the light extraction efficiency low, the GaN base LED light extraction efficiency of traditional structure only is 4%, overwhelming majority luminous energy all is depleted, and luminous efficiency is lower, causes the significant wastage of the energy.At present more existing technology are used for improving the LED light extraction efficiency, and such as surface coarsening technology, flip chip technology etc., but effect is not very good, and efficient only can improve about 20%.At present domestic manufacturer adopts the highest LED that single 100lm/w can be provided of above-mentioned new technology, and wants to replace incandescent lamp and fluorescent lamp enters general illumination market, and its light efficiency needs to reach 150lm/w at least, and prior art still has big gap.
The photonic crystal technology is to handle a kind of new technology of photon spread, is band gap leaded light mechanism but not refractive index leaded light mechanism designs flexible and convenient to use.The photonic crystal of metal structure has the SPP effect again simultaneously, can realize the raising of incident intensity.SPP refers to be induced by external electromagnetic field (as light wave) collective oscillation of metal micro-nanostructure surface free electron, it has two big outstanding features, the one, and huge local field resonance enhancement (Surface Plasmon Resonance, SPR), enhancing can reach thousand times; The 2nd, superpower energy-polling effect can accumulate in energy of electromagnetic field the nanometer scale scope, breaks through traditional diffraction limit.Therefore, if photonic crystal technology and the SPP technology light extraction efficiency that might realize LED fully that combines is brought up to 80%, realize the high-brightness LED of single 220lm/w.
Summary of the invention
The utility model technical issues that need to address are: overcome the deficiencies in the prior art, photonic crystal technology and micro-nano metal surface phasmon theory are combined, a kind of novel light-emitting diode that can realize Ultra-High Efficiency is provided.
Technical solution of the present utility model is: a kind of efficient LED of containing metal photonic crystal, to be formed by substrate, n type layer, Multiple Quantum Well, p-type layer and metal photonic crystal, and metal photonic crystal is positioned on the p-type layer.
The thickness of described metal photonic crystal (5) is 10nm-100nm.
Described metal photonic crystal (5) is made of cycle medium post (6) or the cycle airport (7) of arranging of arranging; The arrange material of medium post (6) of cycle can be gold or silver or aluminium; Cycle is arranged cycle of medium post (6) for (0.2～0.4) times light-emitting diode emergent light centre wavelength, duty ratio 0.2～0.6; Cycle is arranged cycle of airport (7) for (0.3～0.5) times light-emitting diode emergent light centre wavelength, duty ratio 0.7～0.95;
The structure cell of described metal photonic crystal can be square or triangle or hexagon.
The photon band gap of described metal photonic crystal is positioned at the vacuum frequency place of light-emitting diode outgoing centre wavelength correspondence.
The utility model compared with prior art has following advantage:
1. the luminous efficiency of superelevation.The utility model utilizes the surface phasmon effect of metal photonic crystal, by metal surface phasmon and quantum well coupling, strengthen the spontaneous radiation efficient of light, resonance by the metal surface phasmon simultaneously is coupled, the resonance that realizes the outgoing light wave strengthens, and can greatly improve the luminous efficiency of LED.
2. outgoing beam good directionality.The utility model utilizes the photon band gap leaded light of metal photonic crystal, reduce the dispersion angle of outgoing beam, utilize the energy accumulating effect of metal surface phasmon simultaneously, dwindle the emergent light spot size, thereby make outgoing beam not only bright but also straight, improve the directivity of outgoing beam.
3. design flexible means.At the LED of different-waveband, the cycle of photon crystal structure, thickness, structure cell shape all can be adjusted, and flexible design is convenient.
Description of drawings
Fig. 1 is structural representation of the present utility model;
Fig. 2 is the medium post vertical view of arranging in the cycle of the present utility model;
Fig. 3 is the airport vertical view of arranging in the cycle of the present utility model.
Embodiment
As shown in Figure 1, the utility model is made up of substrate (1), n type layer (2), Multiple Quantum Well (3), p-type layer (4) and metal photonic crystal (5), and metal photonic crystal (5) is positioned on the p-type layer (4).The utility model is described in further detail below in conjunction with drawings and Examples.
Present embodiment is that example is set forth the technical solution of the utility model with the InGaN light-emitting diode.
When substrate (1) is that GaN, n type layer (2) are p-GaN for n-GaN, Multiple Quantum Well (3) for InGaN/GaN, p-type layer (4), when metal photonic crystal (5) is arranged medium post (6) formation by the cycle, it is the InGaN efficient LED of a containing metal photonic crystal.
The thickness of metal photonic crystal (5) is 10nm-100nm, and material can be gold or silver or aluminium.When the light wave process p-type layer (4) that sends radiates outwardly to and reaches metal photonic crystal (5), will inspire surface plasma-wave when the middle charge carrier of InGaN/GaN Multiple Quantum Well (3) and hole-recombination.When the thickness of metal photonic crystal (5) is 10nm-100nm, the cycle medium post (6) of arranging provides reciprocal lattice vector, satisfies the wave vector matching condition, the plasma wave coupling of metal photonic crystal (5) upper and lower surface, resonance enhancement takes place, and realizes the intensity enhancing of incident light wave.The structure cell of metal photonic crystal (5) can be square or triangle or hexagon, arrange cycle of medium post (6) for (0.2～0.4) times light-emitting diode emergent light centre wavelength when the cycle, duty ratio 0.2～0.6 o'clock, the photon band gap of metal photonic crystal (5) is positioned at the vacuum frequency place of InGaN light-emitting diode outgoing centre wavelength correspondence, reduces the dispersion angle of outgoing beam.
Present embodiment is that example is set forth the technical solution of the utility model with the AlGaInP light-emitting diode.
When substrate (1) is that GaAs, n type layer (2) are p-GaP for n-GaP, Multiple Quantum Well (3) for AlGaInP/GaInP, p-type layer (4), when metal photonic crystal (5) is arranged airport (7) formation by the cycle, it is the AlGaInP efficient LED of a containing metal photonic crystal.
The thickness of metal photonic crystal (5) is 10nm-100nm, and material can be gold or silver or aluminium.When the light wave process p-type layer (4) that sends radiates outwardly to and reaches metal photonic crystal (5), will inspire surface plasma-wave when the middle charge carrier of AlGaInP/GaInP Multiple Quantum Well (3) and hole-recombination.When the thickness of metal photonic crystal (5) is 10nm-100nm, the cycle airport (7) of arranging provides reciprocal lattice vector, satisfies the wave vector matching condition, the plasma wave coupling of metal photonic crystal (5) upper and lower surface, resonance enhancement takes place, and realizes the intensity enhancing of incident light wave.The structure cell of metal photonic crystal (5) can be square or triangle or hexagon, arrange cycle of airport (7) for (0.3～0.5) times light-emitting diode emergent light centre wavelength when the cycle, duty ratio 0.7～0.95, the photon band gap of metal photonic crystal (5) is positioned at the vacuum frequency place of AlGaInP light-emitting diode outgoing centre wavelength correspondence, reduces the dispersion angle of outgoing beam.
Claims (5)
1. the efficient LED of a containing metal photonic crystal, it is characterized in that: be made up of substrate (1), n type layer (2), Multiple Quantum Well (3), p-type layer (4) and metal photonic crystal (5), metal photonic crystal (5) is positioned on the p-type layer (4).
2. the efficient LED of a kind of containing metal photonic crystal according to claim 1, it is characterized in that: the thickness of described metal photonic crystal (5) is 10nm-100nm.
3. the efficient LED of a kind of containing metal photonic crystal according to claim 1 is characterized in that: described metal photonic crystal (5) is made of cycle medium post (6) or the cycle airport (7) of arranging of arranging; The arrange material of medium post (6) of cycle can be gold or silver or aluminium; Arrange cycle of medium post (6) in cycle is 0.2～0.4 times of light-emitting diode emergent light centre wavelength, duty ratio 0.2～0.6; Arrange cycle of airport (7) in cycle is 0.3～0.5 times of light-emitting diode emergent light centre wavelength, duty ratio 0.7～0.95.
4. the efficient LED of a kind of containing metal photonic crystal according to claim 1, it is characterized in that: the structure cell of described metal photonic crystal (5) can be square or triangle or hexagon.
5. the efficient LED of a kind of containing metal photonic crystal according to claim 1, it is characterized in that: the photon band gap of described metal photonic crystal (5) is positioned at the vacuum frequency place of light-emitting diode outgoing centre wavelength correspondence.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220660553 CN203055972U (en) | 2012-11-22 | 2012-11-22 | A high-efficiency light emitting diode (LED) containing metallic photonic crystals |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201220660553 CN203055972U (en) | 2012-11-22 | 2012-11-22 | A high-efficiency light emitting diode (LED) containing metallic photonic crystals |
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| CN203055972U true CN203055972U (en) | 2013-07-10 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103187503A (en) * | 2012-11-22 | 2013-07-03 | 安徽师范大学 | Efficient light-emitting diode containing metal photonic crystal |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103187503A (en) * | 2012-11-22 | 2013-07-03 | 安徽师范大学 | Efficient light-emitting diode containing metal photonic crystal |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130710 Termination date: 20131122 |