CN207303131U - The structure of LED of LED chip light extraction can be increased - Google Patents
The structure of LED of LED chip light extraction can be increased Download PDFInfo
- Publication number
- CN207303131U CN207303131U CN201721000193.6U CN201721000193U CN207303131U CN 207303131 U CN207303131 U CN 207303131U CN 201721000193 U CN201721000193 U CN 201721000193U CN 207303131 U CN207303131 U CN 207303131U
- Authority
- CN
- China
- Prior art keywords
- led
- led chip
- light extraction
- increased
- dot matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Led Devices (AREA)
Abstract
The structure of LED of LED chip light extraction can be increased, belong to field of semiconductor photoelectron technique.The utility model includes substrate and is placed in the ray structure that substrate top is made of N-type GaN layer, luminescent layer, p-type GaN layer and transparency conducting layer successively.One end in N-type GaN layer is equipped with N-type electrode, on transparency conducting layer, the other end opposite with N-type electrode be equipped with P-type electrode.It is structurally characterized in that：The substrate interior is equipped with dot matrix hole.Compared with the existing technology, the utility model has the cavity of some cycles structure by the way that laser is made in LED chip, and the light in LED chip is reflected, increases the light extraction of LED chip, improves the performance of LED chip.
Description
Technical field
The utility model belongs to field of semiconductor photoelectron technique, can particularly increase the chip structure of LED light extractions.
Background technology
Light emitting diode（LED）It is a kind of photogenerator made of the P-N junction electroluminescent principle using semiconductor
Part.LED has the advantages that pollution-free, high brightness, small power consumption, long lifespan, operating voltage be low, easy miniaturization.
At present, in conventional formal dress light emitting diode construction, the light that is sent from Quantum Well is passing through gallium nitride/sapphire
Meeting transmissive during interface, greatly reduces the light extraction efficiency of light emitting diode.
The content of the invention
For above-mentioned the deficiencies in the prior art, the purpose of this utility model, which is to provide one kind, can increase LED chip
The structure of LED of light extraction.It by laser is made in LED chip have some cycles structure cavity, to
Light in LED chip is reflected, and increases the light extraction of LED chip, improves the performance of LED chip.
In order to reach foregoing invention purpose, the technical solution of the utility model is realized as follows：
The structure of LED of LED chip light extraction can be increased, it includes substrate and is placed in above substrate successively by N-type
The ray structure that GaN layer, luminescent layer, p-type GaN layer and transparency conducting layer form.One end in N type GaN layers is equipped with N-type electricity
Pole, on transparency conducting layer, the other end opposite with N type electrodes be equipped with P type electrodes.It is structurally characterized in that：The substrate interior
Equipped with dot matrix hole.
In above-mentioned structure of LED, the dot matrix hole is two layers.
In above-mentioned structure of LED, the dot matrix hole is in periodic arrangement, the arrangement mode phase in two layers of dot matrix hole
Together.
In above-mentioned structure of LED, two layers of dot matrix hole is arranged as square or rounded projections arranged, faces
Spacing between near point is 50-100um.
In above-mentioned structure of LED, the distance up and down between two layers of dot matrix hole is 10-20um.
In above-mentioned structure of LED, the distance in lower floor's dot matrix hole and the substrate bottom is 20-50um.Keep away
Exempt from LED chip fracture.
In above-mentioned structure of LED, the substrate is Sapphire Substrate.
The utility model can be formed effectively as a result of said structure in the range of the distance up and down in two layers of dot matrix hole
Enhancing light reflection dot matrix effect, improve the reflectivity of die bottom surface, reduce transmitted light, the front for improving light emitting diode goes out
Light efficiency, so as to effectively lift the brightness of light emitting diode.
With reference to pair figure, the utility model is described in further detail with embodiment.
Brief description of the drawings
Fig. 1 is the structure diagram of the utility model；
Fig. 2 is the top view in dot matrix hole in the utility model.
Embodiment
Fig. 1 and Fig. 2 are used to provide a further understanding of the present invention, and a part for constitution instruction, with this
Utility model embodiment is used to explain the utility model together, does not form the limitation to the utility model.In addition, attached drawing data
It is description summary, it is non-drawn to scale.
Referring to Fig. 1 and Fig. 2, the utility model can increase the structure of LED of LED chip light extraction, it includes sapphire
Substrate 1 and it is placed in the hair that the top of substrate 1 is made of N-type GaN layer 2, luminescent layer 3, p-type GaN layer 4 and transparency conducting layer 5 successively
Photo structure.One end in N types GaN layer 2 is equipped with N-type electrode 6, on transparency conducting layer 5, the other end opposite with N types electrode 6
It is equipped with P types electrode 7.Substrate 1 is internally provided with the dot matrix hole 8 of two layers of periodic arrangement, and the arrangement mode in two layers of dot matrix hole 8 is identical,
It is arranged as square or rounded projections arranged, and the spacing between point of proximity be 50-100um, upper and lower between two layers of dot matrix hole 8
Distance is 10-20um.Lower floor's dot matrix hole 8 and the distance of 1 bottom of substrate are 20-50um.
The making of the utility model, is completed in blue-light LED chip, and after LED core slice lapping, in sapphire
Punched among substrate 1 by laser, specific spacing is made in the Sapphire Substrate 1 of LED chip specifically by laser
With two layers of dot matrix hole 8 with periodic structure.
Above example is only to illustrate the technical solution of the utility model, rather than its limitations.Although with reference to foregoing reality
Apply example the utility model is described in detail, those of ordinary skill in the art can still remember previous embodiment
The technical solution of load is modified, or carries out equivalent substitution to which part technical characteristic.It is all to belong to according to the technical program
Obviously change or replace, the essence of appropriate technical solution is departed from various embodiments of the utility model technology
Scheme, belongs to the scope of protection of the utility model.
Claims (7)
1. can increase the structure of LED of LED chip light extraction, it includes substrate（1）And it is placed in substrate（1）Top is successively
By N-type GaN layer（2）, luminescent layer（3）, p-type GaN layer（4）And transparency conducting layer（5）The ray structure of composition, in N type GaN layers
（2）On one end be equipped with N-type electrode（6）, transparency conducting layer（5）Upper and N type electrodes（6）The opposite other end is equipped with P types electricity
Pole（7）, it is characterised in that：The substrate（1）It is internally provided with dot matrix hole（8）.
2. the structure of LED according to claim 1 that LED chip light extraction can be increased, it is characterised in that：The point
Battle array hole（8）For two layers.
3. the structure of LED according to claim 2 that LED chip light extraction can be increased, it is characterised in that：The point
Battle array hole（8）In periodic arrangement, two layers of dot matrix hole（8）Arrangement mode it is identical.
4. the structure of LED according to claim 3 that LED chip light extraction can be increased, it is characterised in that：Two layers of institute
State dot matrix hole（8）Be arranged as square or rounded projections arranged, the spacing between point of proximity is 50-100um.
5. the structure of LED according to claim 4 that LED chip light extraction can be increased, it is characterised in that：Described two
Layer dot matrix hole（8）Between up and down distance be 10-20um.
6. the structure of LED according to claim 5 that LED chip light extraction can be increased, it is characterised in that：Under being located at
The dot matrix hole of layer（8）With the substrate（1）The distance of bottom is 20-50um.
7. the structure of LED according to claim 6 that LED chip light extraction can be increased, it is characterised in that：The lining
Bottom（1）For Sapphire Substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721000193.6U CN207303131U (en) | 2017-08-11 | 2017-08-11 | The structure of LED of LED chip light extraction can be increased |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721000193.6U CN207303131U (en) | 2017-08-11 | 2017-08-11 | The structure of LED of LED chip light extraction can be increased |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207303131U true CN207303131U (en) | 2018-05-01 |
Family
ID=62444064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721000193.6U Expired - Fee Related CN207303131U (en) | 2017-08-11 | 2017-08-11 | The structure of LED of LED chip light extraction can be increased |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207303131U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109390444A (en) * | 2017-08-11 | 2019-02-26 | 南通同方半导体有限公司 | A kind of light emitting diode construction can increase LED chip light extraction |
-
2017
- 2017-08-11 CN CN201721000193.6U patent/CN207303131U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109390444A (en) * | 2017-08-11 | 2019-02-26 | 南通同方半导体有限公司 | A kind of light emitting diode construction can increase LED chip light extraction |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103700735A (en) | Light-emitting diode and manufacturing method thereof | |
| CN204088355U (en) | A kind of light emitting diode construction | |
| CN103700734A (en) | Manufacturing method of light-emitting diode | |
| CN103022070B (en) | A kind of large scale LED chip with novel light-emitting cellular construction | |
| CN204614807U (en) | A kind of highlighted packed LED chip | |
| CN207303131U (en) | The structure of LED of LED chip light extraction can be increased | |
| CN209199977U (en) | A kind of flip LED chips | |
| CN201812849U (en) | Electrode structure of light-emitting diode (LED) chip and LED chip structure containing same | |
| CN203521455U (en) | LED chip | |
| CN205789976U (en) | A kind of LED chip | |
| CN203746891U (en) | Nitride-based light-emitting diode | |
| CN207282517U (en) | A kind of humanoid N electrode of straw and light emitting diode (LED) chip with vertical structure | |
| CN104465919B (en) | Light-emitting diode and manufacturing method thereof | |
| CN104993039A (en) | LED structure of efficient linearly polarized light | |
| CN204424301U (en) | A kind of light-emitting diode | |
| CN105304782B (en) | A kind of blue green LED chip | |
| CN109390444A (en) | A kind of light emitting diode construction can increase LED chip light extraction | |
| CN202917531U (en) | High-efficiency high-voltage LED chip | |
| CN106206900A (en) | A kind of highlighted packed LED chip | |
| CN205900580U (en) | Reddish yellow light emitting diode chip | |
| CN205428988U (en) | CSP encapsulation chip structure | |
| CN101872821A (en) | Platform-like light-emitting diode with high light extraction efficiency and manufacturing method thereof | |
| CN204668344U (en) | A kind of GaN base LED chip of high-efficiency bight-dipping | |
| CN201194234Y (en) | Electrode construction of vertical structure LED | |
| CN205428987U (en) | Increase light -emitting area LED chip structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180501 Termination date: 20190811 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |