CN109643744A - The manufacturing method of luminescence component and luminescence component - Google Patents
The manufacturing method of luminescence component and luminescence component Download PDFInfo
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- CN109643744A CN109643744A CN201780045605.4A CN201780045605A CN109643744A CN 109643744 A CN109643744 A CN 109643744A CN 201780045605 A CN201780045605 A CN 201780045605A CN 109643744 A CN109643744 A CN 109643744A
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- 238000004020 luminiscence type Methods 0.000 title claims abstract description 116
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 101
- 230000001681 protective effect Effects 0.000 claims abstract description 19
- 238000005286 illumination Methods 0.000 claims abstract description 10
- 150000001875 compounds Chemical class 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 48
- 229910052681 coesite Inorganic materials 0.000 claims description 44
- 229910052906 cristobalite Inorganic materials 0.000 claims description 44
- 239000000377 silicon dioxide Substances 0.000 claims description 44
- 229910052682 stishovite Inorganic materials 0.000 claims description 44
- 229910052905 tridymite Inorganic materials 0.000 claims description 44
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 12
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- 150000007524 organic acids Chemical class 0.000 claims description 10
- 150000007522 mineralic acids Chemical class 0.000 claims description 7
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 4
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 4
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 4
- 239000001630 malic acid Substances 0.000 claims description 4
- 235000011090 malic acid Nutrition 0.000 claims description 4
- 235000002906 tartaric acid Nutrition 0.000 claims description 4
- 239000011975 tartaric acid Substances 0.000 claims description 4
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 3
- 235000011054 acetic acid Nutrition 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 235000015165 citric acid Nutrition 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 claims description 2
- 229920005989 resin Polymers 0.000 abstract description 59
- 239000011347 resin Substances 0.000 abstract description 59
- 239000010410 layer Substances 0.000 description 342
- 239000000758 substrate Substances 0.000 description 97
- 239000000463 material Substances 0.000 description 44
- 238000005530 etching Methods 0.000 description 33
- 238000003892 spreading Methods 0.000 description 32
- 238000000034 method Methods 0.000 description 24
- 239000000203 mixture Substances 0.000 description 23
- 230000000694 effects Effects 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 13
- 239000000872 buffer Substances 0.000 description 12
- 238000000407 epitaxy Methods 0.000 description 10
- 239000002346 layers by function Substances 0.000 description 9
- 229910016920 AlzGa1−z Inorganic materials 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 238000004873 anchoring Methods 0.000 description 8
- 239000007772 electrode material Substances 0.000 description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 6
- 238000005253 cladding Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000010276 construction Methods 0.000 description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- SLNPSLWTEUJUGY-UHFFFAOYSA-N 1-(cyclopenten-1-yl)ethanone Chemical compound CC(=O)C1=CCCC1 SLNPSLWTEUJUGY-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 235000005985 organic acids Nutrition 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ATQUFXWBVZUTKO-UHFFFAOYSA-N 1-methylcyclopentene Chemical compound CC1=CCCC1 ATQUFXWBVZUTKO-UHFFFAOYSA-N 0.000 description 1
- -1 Alcohol ketone Chemical class 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 238000004871 chemical beam epitaxy Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention is a kind of luminescence component, including the illumination region, electrode and protective film being made of compound semiconductor.The luminescence component is characterized in that the surface for covering at least part of protective film of the luminescence component is formed with RzBumps more than 5nm.It due to this structure, just can not make the reduction of resin adhesion, and inhibit the generation of resin removing when carrying out resin seal.
Description
Technical field
The present invention relates to the luminescence component being made of compound semiconductor and its manufacturing methods.
Background technique
Compound semiconductor, such as the luminescence component (LED) being made of AlGaInP, in order to prevent because of humidity or processing procedure
In foreign matter attachment caused by deterioration or electric leakage, and be formed with SiO2Protective film (for example, referenced patent document 1).
In particular, in order to protect luminescent layer side, the SiO that uses2Film is formed with the high material of formability and reaction system
To be suitable, and formed with having used the plasma CVD of TEOS and oxygen.In this way, luminescent layer side can be coated well,
Sufficiently achieve the function as protective film.
[existing technical literature]
[patent document]
[patent document 1] Japanese Unexamined Patent Publication 2007-266646 bulletin
Summary of the invention
[the problem of invention is to be solved]
On the other hand, due to above-mentioned SiO2The formability of film is high, and can similarly coat the warp as light extraction face
The reason on roughened surface, and also have bumps (Rz) effect that becomes smaller.Due to SiO2The bumps of film surface become smaller, resin-coated
When anchoring effect become smaller so that resin adhesion reduces, and when carrying out resin seal, existing technology is under high humidity environment
Have the problem of resin removing occurs.
In view of the above problems, the purpose of the present invention is to provide the manufacturing method of a kind of luminescence component and luminescence component,
Do not make the reduction of resin adhesion, and when carrying out resin seal, inhibits the generation of resin removing under high humidity environment.
(technical means to solve problem)
In order to achieve the above objectives, the present invention provides a kind of luminescence component, includes the hair being made of compound semiconductor
Light portion, electrode and protective film, wherein being formed in the surface for at least part of protective film for covering the luminescence component
RzBumps more than 5nm.
In this way, pass through the R formed in the surface of protective filmzBumps more than 5nm, anchoring effect when resin-coated
Become larger, so that resin adhesion increases, and is able to inhibit the generation of resin removing when carrying out resin seal.
At this point, the protective film is with SiO2It is preferred.
As protective film, SiO can be suitably used2。
At this point, at least part on the surface of the luminescence component is that roughened person is preferred.
Through such composition, the luminous efficiency of luminescence component can just be promoted.
In addition, the present invention provides a kind of manufacturing method of luminescence component, which includes by compound semiconductor institute
Illumination region, electrode and the protective film of composition, wherein by at least part of protective film for covering the luminescence component
SiO2On film, through with liquid mixed by the inorganic acid or organic acid of hydrofluoric acid and 1~4 valence carry out frosted processing, and in
The SiO2The surface of film forms bumps.
Such method can manufacture a kind of luminescence component, which can compare easily in SiO2Film surface forms recessed
It is convex, so that resin adhesion increases, and it is able to inhibit the generation of resin removing when carrying out resin seal.
At this point, as the inorganic acid, using at least one of among sulfuric acid, hydrochloric acid, phosphoric acid and organic as this
Acid is preferred using at least one of among malonic acid, acetic acid, citric acid, tartaric acid, malic acid.
As inorganic acid or organic acid, if using such as above-mentioned person, it will be more reliably in SiO2Film surface forms bumps.
[against existing technologies the effect of]
As previously discussed, if luminescence component of the invention, resin adhesion can just increased, and is able to carrying out resin
Inhibit the generation of resin removing when sealing.Furthermore if just resin can be made to touch using the manufacturing method of luminescence component of the invention
Property increase, can more easily produce be able to when carrying out resin seal inhibit resin remove generation luminescence component.
Detailed description of the invention
Fig. 1 is the constructed profile that the first embodiment of luminescence component of the invention is presented.
Fig. 2 is the constructed profile that the second implementation form of luminescence component of the invention is presented.
Fig. 3 is the constructed profile that the third implementation form of luminescence component of the invention is presented.
Fig. 4 is the constructed profile that the 4th implementation form of luminescence component of the invention is presented.
Fig. 5 is the step sectional view that the first embodiment of manufacturing method of luminescence component of the invention is presented.
Fig. 6 is the step sectional view (hookup that the first embodiment of manufacturing method of luminescence component of the invention is presented
5)。
Fig. 7 is the step sectional view (hookup that the first embodiment of manufacturing method of luminescence component of the invention is presented
6)。
Fig. 8 is the step sectional view (hookup that the first embodiment of manufacturing method of luminescence component of the invention is presented
7)。
Fig. 9 is the step sectional view that the second implementation form of manufacturing method of luminescence component of the invention is presented.
Figure 10 is the step sectional view (hookup that the second implementation form of manufacturing method of luminescence component of the invention is presented
9)。
Figure 11 is the step sectional view (hookup that the second implementation form of manufacturing method of luminescence component of the invention is presented
10)。
Figure 12 is the step sectional view (hookup that the second implementation form of manufacturing method of luminescence component of the invention is presented
11)。
Figure 13 is the step sectional view that the third implementation form of manufacturing method of luminescence component of the invention is presented.
Figure 14 is the step sectional view (hookup that the third implementation form of manufacturing method of luminescence component of the invention is presented
13)。
Figure 15 is the step sectional view (hookup that the third implementation form of manufacturing method of luminescence component of the invention is presented
14)。
Figure 16 is the step sectional view (hookup that the third implementation form of manufacturing method of luminescence component of the invention is presented
15)。
Figure 17 is the step sectional view (hookup that the third implementation form of manufacturing method of luminescence component of the invention is presented
16)。
Figure 18 is the step sectional view that the 4th implementation form of manufacturing method of luminescence component of the invention is presented.
Figure 19 is the step sectional view (hookup that the 4th implementation form of manufacturing method of luminescence component of the invention is presented
18)。
Figure 20 is the step sectional view (hookup that the 4th implementation form of manufacturing method of luminescence component of the invention is presented
19)。
Figure 21 is the step sectional view (hookup that the 4th implementation form of manufacturing method of luminescence component of the invention is presented
20)。
Figure 22 is the figure that the relationship of frosted treatment conditions and resin removing rate is presented.
Figure 23 is the constructed profile that the luminescence component of comparative example 1 is presented.
Figure 24 is the constructed profile that the luminescence component of comparative example 2 is presented.
Figure 25 is the constructed profile that the luminescence component of comparative example 3 is presented.
Figure 26 is the constructed profile that the luminescence component of comparative example 4 is presented.
Specific embodiment
As it was noted above, in order to protect SiO used in luminescent layer side2Film is the high material of formability, to use
TEOS is formed as suitable with the plasma CVD of oxygen reacted.On the other hand, due to above-mentioned SiO2The formability of film is high,
And it can equally coat roughened surface as light extraction face, therefore SiO2The bumps of film surface can become smaller.Therefore, resin-coated
When anchoring effect become smaller so that resin adhesion reduces, and when carrying out resin seal, existing technology, which has, to be occurred resin and shells
From the problem of.
The present inventor is able to inhibit the generation of resin removing when carrying out resin seal for not making the reduction of resin adhesion
Luminescence component, energetically studied.Finally, it is found that by SiO2The surface of film forms RzBumps more than 5nm,
Anchoring effect when resin-coated will become larger, so that resin adhesion increases, and be able to inhibit tree when carrying out resin seal
The generation of rouge removing, and then complete the present invention.In addition, the R in the applicationzIndicate 10 mean roughness (JIS on surface
B0601-1994)。
Hereinafter, the example as embodiment, elaborates to the present invention while with reference to attached drawing, but the present invention is simultaneously
It is not limited.
(first embodiment)
Firstly, Fig. 1 will be referred to, and the luminescence component of first embodiment of the invention is explained simultaneously.
The luminescence component 10 of first embodiment of the invention is presented in Fig. 1.
This luminescence component 10 is the supporting substrates 130 that will be provided with second electrode 162 and the second bonding metallic layer 131, and
It is provided with the interface SiO for having conductive part 121 in a part in 122 upper surface of the first bonding metallic layer2Portion 120, and in
Its top is laminated with the second conductive type current spreading layer 107 (0.5~5.0 μm of thickness), mitigates the lattice with current spreading layer 107
Unmatched the second conductive type current buffer layers 106, are lived at the second semiconductor layer of the second conductive type 105 (0.5~1.0 μm of thickness)
Property layer 104 (0.1~1.0 μm of thickness) and the first semiconductor layer of the first conductive type 103 (0.5~1.0 μm of thickness), and formed thereon
There is first electrode 161, and is formed with SiO in semiconductor layer surface2The luminescence component that the substrate of film 170 is engaged, wherein in
SiO2The surface of film 170 is formed with RzBumps more than 5nm.Here, the concave-convex R being formedzIt is preferred for 50nm or more, is
100nm or more is more preferably.In addition, bumps RzThe upper limit be visible wavelength 780nm below be preferred.
In this way, by SiO2The surface of film 170 forms RzBumps more than 5nm, anchoring effect when resin-coated
Become larger, so that resin adhesion increases, and is able to inhibit the generation of resin removing when carrying out resin seal.
In addition, the first semiconductor layer of the first conductive type 103, active layer 104, the second semiconductor layer of the second conductive type 105 and
The material of the second conductive type buffer layer 106 can be (AlxGa1-x)yIn1-yP (0≤x≤1,0≤y≤1) or AlzGa1-zAs(0≦z
≦1).Furthermore current spreading layer 107 can be AlzGa1-zAs (0≤z≤1) or GaAswP1-w(0≦w≦1).Furthermore for energy
As: the first semiconductor layer 103 forms constituted layer by A1 more than two types and is constituted, and the side close to active layer 104 has
Layer (second layer) 103B close to the side of first electrode 161 there is A1 to form the composition of low layer (first layer) 103A (with reference to figure
1).Second layer 103B is to have the function of the functional layer of clad, is not meant as single composition or single condition layer.
Here, at least part of the surface of illumination region 108 at least is (also that is, one of the surface of the first semiconductor layer 103
Point) it is that roughened person is preferred.By so constituting, the luminous efficiency of luminescence component can just promoted.
Then, the manufacturing method of the luminescence component referring to Fig. 5~8 pair first embodiment is explained.
(make as shown in figure 5, preparing crystal axis from [001] direction toward the inclined substrate in [110] direction (starting substrate) 101
For substrate 101, GaAs or Ge can be suitably used).If substrate 101 is selected from above-mentioned material, due to can be by active layer 104
Material carries out epitaxy growth with Lattice Matching, and is easy to improve the quality of active layer, can obtain brightness rising and life characteristic
Promotion.
Then, on starting substrate 101 by epitaxy grow up, sequentially form lattice constant it is roughly the same with substrate first
The first semiconductor layer 103, active layer 104, the second semiconductor layer 105 of the second conductive type and the current spreading layer of conductivity type
107.Furthermore the selection etching layer 102 for removing substrate is inserted between starting substrate 101 and the first semiconductor layer 103.Choosing
It selects etching layer 102 to be made of two layers or more of layer, and at least has the layer 102A adjacent with starting substrate 101, with the
The adjacent layer 102B of semi-conductor layer 103.Layer 102A and layer 102B is made of different material or form.
It is on starting substrate 101, through such as MOVPE method (Organometallic Vapor Phase epitaxy to further illustrate
Method), MBE (molecular beam epitaxy) or CBE (chemical beam epitaxy flop-in method), in the first semiconductor layer by the first conductive type
103, on the illumination region 108 that active layer 104 and the second semiconductor layer 105 of the second conductive type are constituted, according to buffer layer 106,
The sequence of current spreading layer 107 and make the epitaxial substrate 109 after epitaxy is grown up.
Active layer 104 is according to emission wavelength, with (AlxGa1-x)yIn1-yP (0≤x≤1,0.4≤y≤0.6) or AlzGa1- zAs (0≤z≤0.45) formation.The case where being applied to visible illumination, it is suitble to selection AlGaInP, is shone being applied to infrared ray
Bright situation is suitble to selection AlGaAs or InGaAs.But the design about active layer, due to penetrating the utilization of superlattices etc.,
Other than the whole wavelength to due to material composition of Wavelength tunable, therefore it is not limited to above-mentioned material.
First semiconductor layer 103, the second semiconductor layer 105 are selected from AlGaInP or AlGaAs, even if not selecting and activity
Layer 104 can also be with for identical material system.
In addition, in order to promote the characteristic of the first semiconductor 103, active layer 104 or the second semiconductor 105, it is general in each layer
Containing multilayer, the first semiconductor 103, active layer 104 or the second semiconductor 105 are not limited to simple layer.
As current spreading layer 107, AlGaAs, GaAsP or GaP can be suitably used.
When with GaAsxP1-xIt is slow to be formed with InGaP or AlInP in the case that (0≤x < 1) forms current spreading layer 107
It is the most suitable to rush layer 106.Due to GaAsxP1-x(x ≠ 1) and AlGaInP based material, or there is crystalline substance between AlGaAs based material
The unmatched reason of lattice, GaAsxP1-xIt will appear strain and penetration type difference row in (x ≠ 1).Penetration type difference arranges density can be according to group
It is adjusted at x.
Then as shown in fig. 6, at least part accumulation in current spreading layer 107 in epitaxial substrate 109 has boundary
Face SiO2Portion 120, in not having interface SiO2Interface metal portion (conductive part) 121 is set in at least part in the region in portion,
And cladding interface SiO is set2At least part of first bonding metallic layer 122 in portion 120 and interface metal portion 121, shape
At the first laminate 123.
Then, the second bonding metallic layer 131 is set above permanent substrate (supporting substrates) 130, forms the second laminate
132.At least part for connecting the first bonding metallic layer 122 and the second bonding metallic layer 131, to the first laminate 123 and
Two laminates 132 apply the pressure of 1000N and 150 DEG C or more of heat and engage, and form engagement substrate 140.
Then as shown in fig. 7, making the first half to lead by removing starting substrate 101 from engagement substrate 140 with wet etching
Body layer 103 exposes.When etching, it is etched with the mixed liquor of ammonium hydroxide and aqueous hydrogen peroxide solution.By to be different from primordium
The material of plate is etching stopping layer 102A, just can selectively stop being carried out with the mixed liquor of ammonium hydroxide and aqueous hydrogen peroxide solution
Etching.AlInP can be used as etching stopping layer 102A.
After removing starting substrate 101, etching stopping layer 102A is removed.When using AlInP as etching stopping layer 102A,
Usable hydrochloric acid is removed.In order to stop the etching being carried out with hydrochloric acid, etching stopping layer 102B can use GaAs.
Then, the first electrode 161 adjacent with the first semiconductor layer 103 is formed, the adjacent with permanent substrate 130 is formed
Two electrodes 162, form at least part of insulating layer 170 of the first semiconductor layer 103 of cladding, and make luminescence component substrate
171。
The first conductive type be N-shaped the case where, first electrode 161 can include Au, Ag, Al, Ni, Pd, Ge, Si, Sn at least
More than one material, and the film thickness with 100nm or more.The first conductive type be p-type the case where, can include Au, Be, Mg,
The material of at least one of Zn or more, and the film thickness with 100nm or more.The case where the second conductive type is N-shaped, second electrode
162 can be comprising material more than at least one of Au, Ag, Al, Ni, Pd, Ge, Si, Sn, and has the film thickness of 100nm or more.
The case where the second conductive type is p-type, can be comprising material more than at least one of Au, Be, Mg, Zn, and has 100nm's or more
Film thickness.
Then as shown in figure 8, using with liquid mixed by the inorganic acid or organic acid of hydrofluoric acid and 1~4 valence, to hair
The insulating layer 170 of optical assembly substrate 171 carries out frosted processing.This inorganic acid can for sulfuric acid, hydrochloric acid, in phosphoric acid at least its
Middle one kind, organic acid can be at least one of in malonic acid, acetic acid, citric acid, tartaric acid, malic acid.In this way,
Just the surface made for insulating layer 170 has indent and convex frosted processing substrate 180.Then frosted processing substrate 180 is separated
For individual crystalline grains, conducting wire is set in first electrode 161, and after second electrode 162 is fixed on standard shaft with electroconductive resin, with ring
Oxygen resin seal makes light emitting diode.
(the second implementation form)
Then Fig. 2 will be referred to, while the luminescence component of the second implementation form of the invention will be explained.
The luminescence component 20 of the second implementation form of the invention is presented in Fig. 2.
This luminescence component 20 is the supporting substrates 230 that will be provided with second electrode 262 and the second bonding metallic layer 231, and
It is laminated with to be located on the first bonding metallic layer 222 and has the interface transparent conductive film layer 220 of contact portion 208, the above it
Two conductivity type current spread layers 207 (0.5~5.0 μm of thickness) mitigate lattice unmatched the between current spreading layer 207
Two conductivity type buffer layers 206, the second semiconductor layer of the second conductive type 205 (0.5~1.0 μm of thickness), 204 (thick layer of active layer
0.1~1.0 μm), the first semiconductor layer of the first conductive type 203 (0.5~1.0 μm of thickness), and it is rectangular at first electrode thereon
261, and SiO is formed in semiconductor layer surface2The luminescence component that the substrate of film 270 is engaged, wherein in SiO2Film 270
Surface forms RzBumps more than 5nm.Here, the concave-convex R formedzIt is preferred for 50nm or more, more preferably for 100nm or more.Even if
Among the second implementation form, due to by SiO2The R that the surface of protective film 270 is formedzBumps more than 5nm, and with first
Anchoring effect when resin-coated can become larger implementation form in the same manner, so that resin adhesion increases, and be able to set
Inhibit the generation of resin removing when rouge seals.
In addition, the first semiconductor layer of the first conductive type 203, active layer 204, the second semiconductor layer of the second conductive type 205, with
And the material of the second conductive type buffer layer 206, it can be (AlxGa1-x)yIn1-yP (0≤x≤1,0≤y≤1) or AlzGa1-zAs(0
≦z≦1).Furthermore current spreading layer 207 can be AlzGa1-zAs (0≤z≤1) or GaAswP1-w(0≦w≦1).Furthermore can be
Such as: the first semiconductor layer 203 forms constituted layer by two kinds or more of A1 and is constituted, and the side close to active layer 204 has
Layer (second layer) 203B close to the side of first electrode 261 there is A1 to form the composition of low layer (first layer) 203A (with reference to figure
2).Second layer 203B is to have the function of the functional layer of clad, is not meant as single composition or single condition layer.
Furthermore 220 system of interface transparent conductive film layer is by containing the oxygen in Mg, Ni, Cu, Ga, In, Sn more than any kind
The Chemistry and Physics Institute is constituted.
Then will according to Fig. 9~Figure 12, come illustrate the second implementation form luminescence component 20 manufacturing method.
As shown in Figure 9, prepare crystal axis from the past inclined substrate in [110] direction (starting substrate) 201 in [001] direction
(as substrate 201, can suitably use GaAs or Ge).
Then, on starting substrate 201 by epitaxy growth sequentially form lattice constant it is roughly the same with substrate first
First semiconductor layer 203 of conductivity type, active layer 204, the second semiconductor layer 205 of the second conductive type, current spreading layer 207,
And contact layer 208, form epitaxial substrate 210.In addition, the first semiconductor layer 203, active layer 204, the second semiconductor layer 205
Constitute illumination region 209.Furthermore the selection for removing substrate is inserted between starting substrate 201 and the first semiconductor layer 203
Etching layer 202.Selection etching layer is made of two layers or more of layer, and at least has the layer adjacent with starting substrate
202A, the layer 202B adjacent with the first semiconductor layer.Layer 202A and layer 202B can be made of different material or form.
First semiconductor layer 203, active layer 204, the second semiconductor layer 205 and current spreading layer 207 can be used and first
The first semiconductor layer 103, active layer 104, the second semiconductor layer 105 and the identical material of current spreading layer 107 of implementation form,
And there can be identical composition.Contact layer 208 with material identical with current spreading layer 207 constituted also can, with different materials
Even material is constituted.
Then as shown in Figure 10, in epitaxial substrate 210, a part of contact layer 208 is removed, to be adjacent to contact portion
208 accumulate the first transparent conductive film 220 at least part of mode of the two of current spreading layer 207, and cladding the is arranged
At least part of first bonding metallic layer 222 of one transparent conductive film 220 forms the first laminate 223.
Then, the second bonding metallic layer 231 is set above permanent substrate (supporting substrates) 230, forms the 2nd laminate
232.At least part for connecting the first bonding metallic layer 222 and the second bonding metallic layer 231, to the first laminate 223 and
Two laminates 232 apply the pressure of 1000N and 150 DEG C or more of heat is engaged, and form engagement substrate 240.
Then as shown in figure 11, by removing starting substrate 201 from engagement substrate 240 with wet etching, make the first half
Conductor layer 203 is exposed.When etching, it can carry out identically as first embodiment.
After removing starting substrate 201, etching stopping layer 202A is removed.Etching stopping layer 202A, 202B can be used and first
The identical material of etching stopping layer 102A, 102B of implementation form.
Then, it forms the first electrode 261 adjacent with the first semiconductor layer 203, form the adjacent with permanent substrate 230
Two electrodes 262 form at least part of insulating layer 270 of the first semiconductor layer 203 of cladding and make luminescence component substrate
271.First electrode 261, second electrode 262 can be used identical as the first electrode 161 of first embodiment, second electrode 162
Material, and can have identical film thickness.
Then as shown in figure 12, mill identical with first embodiment is carried out to the insulating layer 270 of luminescence component substrate 271
Sand processing.In this way, just make the indent and convex frosted processing substrate 280 of surface tool for insulating layer 270.Then by frosted
Processing substrate 280 is separated into individual crystalline grains, steel wire is arranged at first electrode 261, and by second electrode 262 with electroconductive resin
After being fixed on standard shaft, the light emitting diode sealed with epoxy resin is made.
(third implementation form)
Then Fig. 3 will be referred to, while the luminescence component of third implementation form of the invention will be explained.
The luminescence component 30 of the third implementation form of luminescence component of the invention is presented in Fig. 3.This luminescence component 30 is will have
The supporting substrates 330 of standby second dielectric film 321 and the second following layer 325, and be laminated on the first following layer 324
First dielectric film 320, the second conductive type current spreading layer 307 (0.5~5.0 μm of thickness) thereon, to mitigate with electricity
The unmatched the second conductive type buffer layer 306 of lattice, the 305 (thickness of the second semiconductor layer of the second conductive type of wandering layer of cloth 307
0.5~1.0 μm), active layer 304 (0.1~1.0 μm of thick layer), the first semiconductor layer of the first conductive type 303 (thickness 0.5~
1.0 μm), and side is formed with first electrode 350 thereon, furthermore, a part of semiconductor layer is until the second conductive type current spreading layer
307 part is removed, and forms second electrode 351 above through removed the second conductive type current spreading layer 307, more into
One step is formed with SiO in semiconductor layer surface2The luminescence component that the substrate of film 370 is engaged, wherein in SiO2The table of film 370
Face is formed with RzBumps more than 5nm.Here, forming concave-convex RzIt is preferred for 50nm or more, more preferably for 100nm or more.Even if
Among third implementation form, by SiO2The surface of film 370 forms RzBumps more than 5nm, identically as first embodiment
Anchoring effect when resin-coated can become larger, so that resin adhesion increases, and be able to inhibit tree when carrying out resin seal
The generation of rouge removing.
In addition, the first semiconductor layer of the first conductive type 303, active layer 304, the second semiconductor layer of the second conductive type 305 and
The material of the second conductive type buffer layer 306 can be (AlxGa1-x)yIn1-yP (0≤x≤1,0≤y≤1) or AlzGa1-zAs(0≦z
≦1).Furthermore current spreading layer 307 can be AlzGa1-zAs (0≤z≤1) or GaAswP1-w(0≦w≦1).Furthermore for energy
As: the first semiconductor layer 303 can form constituted layer by A1 more than two types and be constituted, and have close to the side of active layer 304
There is layer (second layer) 303B, the composition (reference that close to the side of first electrode 350 there is A1 to form lower layer (first layer) 303A
Fig. 3).Second layer 303B is to have the function of the functional layer of clad, is not meant as single composition or single condition layer.
Then will according to Figure 13~Figure 17, come illustrate third implementation form luminescence component 30 manufacturing method.
As shown in figure 13, prepare crystal axis (to make from [001] direction toward the inclined substrate in [110] direction (starting substrate) 301
For substrate 301, GaAs or Ge can be suitably used).
Then, on starting substrate 301 by epitaxy grow up, sequentially form lattice constant it is roughly the same with substrate first
The first semiconductor layer 303, active layer 304, the second semiconductor layer 305 of the second conductive type and the current spreading layer of conductivity type
307, form epitaxial substrate 309.In addition, the first semiconductor layer 303, active layer 304 and the second semiconductor layer 305 constitute hair
Light portion 308.Furthermore the selection etching layer for removing substrate is inserted between starting substrate 301 and the first semiconductor layer 303
302.Selection etching layer 302 is made of two layers or more of layer construction framework, and at least has the layer adjacent with starting substrate
302A, the layer 302B adjacent with the first semiconductor layer.Layer 302A and layer 302B can be made of different material or form.
First semiconductor layer 303, active layer 304, the second semiconductor layer 305 and current spreading layer 307 can be used and first
The first semiconductor layer 103, active layer 104, the second semiconductor layer 105 and the identical material of current spreading layer 107 of implementation form
Material, and can have identical composition.
Then as shown in figure 14, the first SiO is accumulated in the current spreading layer 307 in epitaxial substrate 3092Film 320.First
SiO2Film 320 can be formed with optical cvd, sputtering method, PECVD.
Then, in the first SiO2Transparent following layer 325 is formed on film 320, forms the first engagement substrate 326.It is transparent then
Layer 325 may be selected with BCB (benzocyclobutene) or epoxy resin.Forming method selects to be formed according to dip method or spin-coating method can
The material of energy is suitable.For example, the methyl cyclopentenyl ketone for the BCB material that can be accumulated according to spin-coating method the case where, in
One SiO2Drip methyl cyclopentenyl ketone on film 320, and with 1, the revolving speed of 000~5,000rpm implements rotary coating.Due to only
It wants consistently be coated with solid, therefore any revolving speed above-mentioned all may be selected, but with 3, the revolving speed of 000rpm or more is to close
It is suitable.Solvent is allowed to volatilize in maintaining 30 seconds or more in heating plate with 80~100 DEG C of range after rotary coating.As long as due to solvent
Volatilization, any condition above-mentioned all may be selected, but select 90 DEG C of temperature or more, and 60 seconds or more hold time is preferred.
Then in the 2nd SiO of accumulation on transparent substrate (supporting substrates) 3302Film 321 forms the second engagement substrate 331.The
Two SiO2Film 321 can be formed with optical cvd, sputtering method, PECVD.
Although disclosing only in the example that transparent following layer 325 is arranged on the first engagement substrate 326, base is engaged in second
Transparent following layer is set also on plate 331, identical effect can be obtained.Furthermore in the first engagement substrate 326 and the second engagement substrate
331 the two is all arranged transparent following layer and also may be used.
Then, as shown in figure 14, with transparent following layer 325 and the 2nd SiO2Film 321 is opposite and discontiguous mode is set
The first engagement substrate 326 and the second engagement substrate 331 are set, and is set as 30Pa vacuum environment below.After vacuum environment, make
Bright following layer 325 and the 2nd SiO2Film 321 contact, and control at a temperature of between the pressure of 5000N and 100~200 DEG C and
After maintenance 5 minutes or more, applies 300 DEG C or more of heat and crimp the first engagement substrate 326 and engage substrate 331 with second, and
Form engagement substrate 340.
Starting substrate 301 is removed from engagement substrate 340 to etch.When etching, it can carry out identically as first embodiment.
After removing starting substrate 301, etching stopping layer 302A is removed.Etching stopping layer 302A, 302B can be used and first
The identical material of etching stopping layer 102A, 102B of implementation form.
Then as shown in figure 15, the first electrode 350 adjacent with the first semiconductor layer 303 is formed.First electrode 350 can make
With material identical with the first electrode 161 of first embodiment, there can be the film thickness of 300nm or more.Then pass through dry type
The etching of method or damp process forms the first semiconductor layer 303, the active layer 304 in the region 360 other than first electrode 350 exists
Pattern through cutting off.It is rendered as being cut off the example until current spreading layer 307 in Figure 15, but even in the second semiconductor
Layer 305 or buffer layer 306 stop etching in the state of exposing can also have same function.And although by region in Figure 15
Region other than 360 is presented as flat surface, but is not limited to flat surface, and the region other than region 360 also can be coarse
Face or male and fomale(M&F).
Then as shown in figure 16, at least part of insulating layer 370 of the first semiconductor layer 303 of cladding is formed.Insulating layer
370 be SiO2.In Figure 16, although showing cladding active layer 304, the second semiconductor layer 305, buffer layer 306, electric current on figure
The example of a part of spread layer 307, form that but not limited to this.
Then a part in region 360 is formed the luminescence component substrate 371 for being formed with second electrode 351.The
Material identical with the second electrode 162 of first embodiment can be used in two electrodes 351, can have the film thickness of 300nm or more.
Then as shown in figure 17, to the insulating layer 370 of luminescence component substrate 371 identically as first embodiment in table
Face applies frosted processing, and the surface for being made in insulating layer 370 has indent and convex frosted processing substrate 380.
It then, will after frosted processing substrate 380 being divided into individual crystalline grains with stealthy patterning method or blade patterning method etc.
Crystal grain is fixed on standard shaft, and conducting wire is arranged at first electrode 350, second electrode 351, makes luminous two sealed with epoxy resin
Pole pipe.
(the 4th implementation form)
Then Fig. 4 will be referred to, while the luminescence component of the 4th implementation form of the invention will be explained.
Fig. 4 is the luminescence component 40 that the 4th implementation form of luminescence component of the invention is presented.
This luminescence component 40 be laminated with the second conductive type current spreading layer 407 (30~150 μm of thickness), to mitigate with
The unmatched the second conductive type buffer layer 406 of lattice, the second semiconductor layer of the second conductive type 405 between current spreading layer 407
(0.5~1.0 μm of thickness), active layer 404 (0.1~1.0 μm of thickness), 403 (thickness 0.5 of the first semiconductor layer of the first conductive type
~1.0 μm), and it is formed with first electrode 450 thereon, furthermore, a part of semiconductor layer is spread until the second conductive type electric current
The part of layer 407 is removed, and second electrode 451 is formed on through removed the second conductive type current spreading layer 407, more into one
It walks and forms SiO in semiconductor layer surface2The luminescence component of film 470, wherein in SiO2The surface of film 470 forms RzIt is recessed more than 5nm
It is convex.Here, the concave-convex R formedzIt is preferred with 50nm or more, the above are more preferably by 100nm.In even the 4th implementation form, lead to
Excessively SiO2The surface of film 470 forms RzBumps more than 5nm, identically as first embodiment, anchoring when resin-coated
Effect can become larger, so that resin adhesion increases, and be able to inhibit the generation of resin removing when carrying out resin seal.
In addition, the first semiconductor layer of the first conductive type 403, active layer 404, the second semiconductor layer of the second conductive type 405 and
The material of the second conductive type buffer layer 406 can be (AlxGa1-x)yIn1-yP (0≤x≤1,0≤y≤1) or AlzGa1-zAs(0≦z
≦1).Furthermore current spreading layer 407 can be AlzGa1-zAs (0≤z≤1) or GaAswP1-w(0≦w≦1).Furthermore for energy
As: the first semiconductor layer 403 forms constituted layer by A1 more than two types and is constituted, and the side close to active layer 404 has
Layer (second layer) 403B close to the side of first electrode 450 there is A1 to form the composition of lower layer (first layer) 403A (with reference to figure
4).Second layer 403B is to have the function of the functional layer of clad, is not meant as single composition or single condition layer.
Then will according to Figure 18~Figure 21, come illustrate the 4th implementation form as this luminescence component 40 manufacturing method.
As shown in figure 18, prepare crystal axis (to make from [001] direction toward the inclined substrate in [110] direction (starting substrate) 401
For substrate 401, GaAs or Ge can be suitably used).
Then, on starting substrate 401 by epitaxy grow up, sequentially form lattice constant it is roughly the same with substrate first
The first semiconductor layer 403, active layer 404, the second semiconductor layer 405 of the second conductive type and the current spreading layer of conductivity type
407, and form epitaxial substrate 409.In addition, the first semiconductor layer 403, active layer 404,405 three of the second semiconductor layer composition
Illumination region 408.Furthermore the selection etching layer for removing substrate is inserted between starting substrate 401 and the first semiconductor layer 403
402.Selection etching layer be made of two layers or more of layer, and at least have with starting substrate abut layer 402A and with
The adjacent layer 402B of first semiconductor layer.Layer 402A and layer 402B is by different materials or forms to constitute and also may be used.
First semiconductor layer 403, active layer 404, the second semiconductor layer 405, current spreading layer 407 can be used with first in fact
The first semiconductor layer 103, active layer 104, the second semiconductor layer 105, the identical material of current spreading layer 107 of form are applied, and
There can be identical composition.
Furthermore the first semiconductor layer 403 can be constituted to form constituted layer by A1 more than two types, close to activity
The side of layer 404 has layer (second layer) 403B, at the side of starting substrate 401 there is A1 to form lower layer (first layer)
The composition of 403A.403B is to have the function of the functional layer of clad, is not meant as single composition or single condition layer.
Then as shown in figure 19, starting substrate 401 is removed with etching.When etching, can identically as first embodiment into
Row.
After removing starting substrate 401, etching stopping layer 402A is removed.Etching stopping layer 402A, 402B can be used and first
The identical material of etching stopping layer 102A, 102B of implementation form.
Then it is formed by the etching of dry method or damp process by the region of the first semiconductor layer 403 and active layer 404
460 cut off after pattern.The example cut off until current spreading layer 407 is illustrated as in Figure 19, but even
Two semiconductor layers 405 or buffer layer 406 stop etching in the state of exposing can also have same function.And although Figure 19's
The region other than region 460 is presented as flat surface in example, but is not limited to flat surface, the area other than region 460
Domain also can be rough surface or male and fomale(M&F).
Then as shown in figure 20, with coat the first electrode 450 adjacent at least part of the first semiconductor layer 403,
At least part in region 460 and region 460 by exterior domain it is at least part of in a manner of form insulating layer 470.Insulating layer
470 be SiO2.Then it forms and is formed with the luminescence component 471 of second electrode 451 in a part of place in region 460.
Material identical with the first electrode 161 of first embodiment can be used in first electrode 450, can have 300nm with
On film thickness.Material identical with the second electrode 162 of first embodiment can be used in second electrode 451, and can have 300nm
Above film thickness.
Then as shown in figure 21, to the insulating layer 470 of luminescence component substrate 471 identically as first embodiment to surface
The surface for carrying out frosted processing, and being made in insulating layer 470 has indent and convex frosted processing substrate 480.
Then, after being divided into individual crystalline grains with stealthy patterning method, method of scoring or blade patterning method etc., crystal grain is fixed on
Conducting wire is arranged in standard shaft at first electrode 450, second electrode 451, makes the light emitting diode sealed with epoxy resin.
[embodiment]
Hereinafter, Examples and Comparative Examples will be presented and do more specific description to the present invention, but the present invention is not by these
Limitation.
(embodiment 1)
Luminescence component 10 as shown in Figure 1 is made.First semiconductor layer 103 of this luminescence component 10, active layer 104,
Second semiconductor layer 105 is the AlInGaP of same material.Furthermore the first semiconductor layer 103 forms institute by two kinds or more of A1
The layer of composition is constituted, and has layer (second layer) 103B close to the side of active layer 104, has A1 close to the side of first electrode 161
Form lower layer (first layer) 103A.Second layer 103B is to have the function of the functional layer of clad.Furthermore the first conductive type
For N-shaped and the electrode material of first electrode 161 selects the alloy of AuGeNi, which is set as 500nm.The second conductive type is p
The electrode material of type and second electrode 162 selects the alloy of AuBe, which is set as 500nm.Insulating layer 170 is by with TEOS
With O2For raw material P-CVD method and form SiO2Film.Then film thickness is set as 300nm.
This luminescence component is as being in the fabrication process machined in epitaxial substrate by the frosted of condition 1~8 shown in table 1
SiO2The surface of film 170 is formed manufactured by indent and convex 8 wafer.In addition, also being presented in table 1 in each frosted treatment conditions
(by by the malic acid for being the acetic acid of 1 valence organic acid, being trivalent organic acid, the tartaric acid for being 4 valence organic acids, be 4 valence organic acids
The solution that is mixed with hydrofluoric acid or hydrofluoric acid buffer solution of citric acid any one of them frosted processing) under surface it is thick
Rugosity (Rz)。
[table 1]
For as above manufactured luminescence component, the resin removing rate under each frosted treatment conditions has been investigated
At.The results are shown in Figure 22.
(embodiment 2)
Luminescence component 20 as shown in Figure 2 is made.The first semiconductor layer 203, the active layer 204, of this luminescence component
Two semiconductor layers 205 are the AlInGaP of same material.Furthermore the first semiconductor layer 203 forms institute's structure by two kinds or more of A1
At layer constituted, close to active layer 204 side have layer (second layer) 203B, close to first electrode 261 side have A1 group
At the composition of lower layer (first layer) 203A.Layer 203B is to have the function of the functional layer of clad.The first conductive type is N-shaped
And the alloy of the electrode material selection AuGeNi of first electrode 261, the film thickness are set as 500nm.The second conductive type is p-type and the
The alloy of the electrode material selection AuBe of two electrodes 262, the film thickness are set as 500nm.Insulating layer 270 is by with TEOS and O2For
The P-CVD method of raw material and form SiO2Film.Furthermore film thickness is set as 300nm.
This luminescence component is as being in the fabrication process machined in epitaxial substrate by the frosted of condition 1~8 shown in table 1
SiO2The surface of film 270 is formed manufactured by indent and convex 8 wafer.
For as above manufactured luminescence component, the resin removing rate under each frosted treatment conditions has been investigated
At.The results are shown in Figure 22.
(embodiment 3)
Luminescence component 30 as shown in Figure 3 is made.The first semiconductor layer 303, the active layer 304, of this luminescence component
Two semiconductor layers 305 are the AlInGaP of same material.Furthermore institute is formed by two kinds or more of A1 for the first semiconductor layer 303
The layer of composition is constituted, and has layer (second layer) 303B close to the side of active layer 304, has A1 close to the side of first electrode 350
Form the composition of lower layer (first layer) 303A.Layer 303B is to have the function of the functional layer of clad.Transparent following layer 325
Methyl cyclopentenyl ketone for the BCB material that can be accumulated by spin-coating method.In the first SiO2Drip methyl cyclopentene on film 320
Alcohol ketone implements rotary coating with the revolving speed of 3,000rpm.It maintains 60 seconds or more to enable at 90 DEG C in heating plate after rotary coating
Solvent volatilization.And the first conductive type is the alloy of the electrode material selection AuGeNi of N-shaped and first electrode 350, which sets
For 500nm.The second conductive type is the alloy of the electrode material selection AuBe of p-type and second electrode 351, which is set as
500nm.Insulating layer 370 is by with TEOS and O2For raw material P-CVD method and form SiO2Film.Furthermore film thickness is set as 300nm.
This luminescence component as in the fabrication process to epitaxial substrate by the frosted of condition 1~8 shown in table 1 processing in
SiO2The surface of film 370 is formed manufactured by indent and convex 8 wafer.
For as above manufactured luminescence component, the resin removing rate under each frosted treatment conditions has been investigated
At.The results are shown in Figure 22.
(embodiment 4)
Luminescence component 40 as shown in Figure 4 is made.The first semiconductor layer 403, the active layer 404, of this luminescence component
Two semiconductor layers 405 are the AlInGaP of same material.Furthermore the first semiconductor layer 403 forms institute's structure by two kinds or more of A1
At layer constituted, close to active layer 404 side have layer (second layer) 403B, close to first electrode 450 side have A1 group
At the composition of lower layer (first layer) 403A.Layer 403B is to have the function of the functional layer of clad.And the first conductive type is n
The electrode material of type and first electrode 450 selects the alloy of AuGeNi, which is set as 500nm.The second conductive type be p-type and
The alloy of the electrode material selection AuBe of second electrode 451, the film thickness are set as 500nm.Insulating layer 470 is by with TEOS and O2
For raw material P-CVD method and form SiO2Film.Furthermore film thickness is set as 300nm.
This luminescence component as in the fabrication process to epitaxial substrate by the frosted of condition 1~8 shown in table 1 processing in
SiO2The surface of film 470 is formed manufactured by indent and convex 8 wafer.
For as above manufactured luminescence component, the resin removing rate under each frosted treatment conditions has been investigated
At.The results are shown in Figure 22.
(comparative example 1)
Luminescence component 50 as shown in figure 23 is made.This luminescence component is not in addition to SiO2The surface of protective film 170 into
It is construction same as Example 1 other than row frosted processing.Furthermore this luminescence component is not by carrying out 1 epitaxy of frosted processing
Manufactured by wafer.
For as above manufactured luminescence component, the resin removing rate under each frosted treatment conditions has been investigated
At.The results are shown in Figure 22.
(comparative example 2)
Luminescence component 60 as of fig. 24 are made.This luminescence component is not in addition to SiO2The surface of protective film 270 into
It is construction same as Example 2 other than row frosted processing.Furthermore this luminescence component is not by carrying out 1 epitaxy of frosted processing
Manufactured by wafer.
For as above manufactured luminescence component, the resin removing rate under each frosted treatment conditions has been investigated
At.The results are shown in Figure 22.
(comparative example 3)
Luminescence component 70 as shown in figure 25 is made.This luminescence component is not in addition to SiO2The surface of protective film 370 into
It is construction same as Example 3 other than row frosted processing.Furthermore this luminescence component is not by carrying out 1 epitaxy of frosted processing
Manufactured by wafer.
For as above manufactured luminescence component, the resin removing rate under each frosted treatment conditions has been investigated
At.The results are shown in Figure 22.
(comparative example 4)
Luminescence component 80 as shown in figure 26 is made.This luminescence component is not in addition to SiO2The surface of protective film 470 into
It is construction same as Example 4 other than row frosted processing.Furthermore this luminescence component is not by carrying out 1 epitaxy of frosted processing
Manufactured by wafer.
For as above manufactured luminescence component, the resin removing rate under each frosted treatment conditions has been investigated
At.The results are shown in Figure 22.
As shown in figure 22, no matter in the case where frosted treatment conditions are the either condition in 1~condition of condition 8, discovery was carried out
Compared with the comparative example 1 for not carrying out frosted processing, removing rate is significantly improved the embodiment 1 of frosted processing.
Furthermore as shown in figure 22, no matter frosted treatment conditions be 1~condition of condition 8 in either condition under, find into
Compared with the comparative example 2 for not carrying out frosted processing, removing rate is significantly improved the embodiment 2 of frosted of going processing.
Furthermore as shown in figure 22, no matter frosted treatment conditions be 1~condition of condition 8 in either condition under, find into
Compared with the comparative example 3 for not carrying out frosted processing, removing rate is significantly improved the embodiment 3 of frosted of going processing.
Furthermore as shown in figure 22, no matter frosted treatment conditions be 1~condition of condition 8 in either condition under, find into
Compared with the comparative example 4 for not carrying out frosted processing, removing rate is significantly improved the embodiment 4 of frosted of going processing.
In addition, the present invention is not limited to the above embodiments.Above-described embodiment is for example, all have and the present invention
The recorded substantially same composition of technical idea of claim, identical effect person is generated, no matter being what all
Comprising within the technical scope of the present invention.
Claims (5)
1. a kind of luminescence component, including the illumination region, electrode and protective film being made of compound semiconductor,
Wherein in the surface for at least part of protective film for covering the luminescence component, it is formed with RzBumps more than 5nm.
2. luminescence component as described in claim 1, wherein the protective film is SiO2。
3. luminescence component as claimed in claim 1 or 2, wherein at least part on the surface of the illumination region is roughened.
4. a kind of manufacturing method of luminescence component, including the illumination region, electrode and protection being made of compound semiconductor
Film,
Wherein in the SiO for at least part of protective film for coating the luminescence component2On film, through with hydrofluoric acid and 1~4 valence
Inorganic acid or organic acid mixed by liquid carry out frosted processing, and in the SiO2The surface of film forms bumps.
5. the manufacturing method of luminescence component as claimed in claim 4 uses sulfuric acid, hydrochloric acid, phosphoric acid wherein being used as the inorganic acid
Among it is at least one of, and as the organic acid, among malonic acid, acetic acid, citric acid, tartaric acid, malic acid
It is at least one of.
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| JP2016161519A JP6623973B2 (en) | 2016-08-19 | 2016-08-19 | Light emitting device and method for manufacturing light emitting device |
| PCT/JP2017/023656 WO2018034065A1 (en) | 2016-08-19 | 2017-06-28 | Light-emitting element and manufacturing method for light-emitting element |
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| JP2010251531A (en) * | 2009-04-16 | 2010-11-04 | Rohm Co Ltd | Semiconductor light-emitting element |
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| JP2016058551A (en) * | 2014-09-09 | 2016-04-21 | 株式会社東芝 | Semiconductor light emitting device |
| JP6197799B2 (en) * | 2015-01-09 | 2017-09-20 | 信越半導体株式会社 | Light emitting device and method for manufacturing light emitting device |
| US9331239B1 (en) * | 2015-07-07 | 2016-05-03 | Epistar Corporation | Light-emitting device |
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| JP2008294306A (en) * | 2007-05-25 | 2008-12-04 | Toyoda Gosei Co Ltd | Group iii nitride compound semiconductor light emitting element |
| JP2010251531A (en) * | 2009-04-16 | 2010-11-04 | Rohm Co Ltd | Semiconductor light-emitting element |
| JP2010287621A (en) * | 2009-06-09 | 2010-12-24 | Sharp Corp | Method of manufacturing microstructure |
| JP2013232503A (en) * | 2012-04-27 | 2013-11-14 | Toshiba Corp | Semiconductor light-emitting device |
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| WO2016072050A1 (en) * | 2014-11-07 | 2016-05-12 | 信越半導体株式会社 | Light-emitting element and method for manufacturing light-emitting element |
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| WO2018034065A1 (en) | 2018-02-22 |
| JP2018029162A (en) | 2018-02-22 |
| JP6623973B2 (en) | 2019-12-25 |
| TW201824584A (en) | 2018-07-01 |
| CN109643744B (en) | 2021-07-23 |
| TWI683451B (en) | 2020-01-21 |
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