CN105097496B - The method of etching - Google Patents
The method of etching Download PDFInfo
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- CN105097496B CN105097496B CN201410206633.8A CN201410206633A CN105097496B CN 105097496 B CN105097496 B CN 105097496B CN 201410206633 A CN201410206633 A CN 201410206633A CN 105097496 B CN105097496 B CN 105097496B
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Abstract
The invention discloses a kind of method of etching.Wherein this method comprises the following steps：In the top of the gallium nitride layer of gallium nitride based LED device, the hard mask layer and photoresist layer of preset thickness are set；The gallium nitride based LED device is subjected to N electrode etching under default etch recipe, obtains the N electrode of the gallium nitride based LED device.The method of the etching of the present invention, sets up hard mask layer in gallium nitride based layer, so as to adjust etching inclination angle by adjusting the thickness of hard mask layer.The thickness setting of hard mask layer can be adjusted accurately, therefore can be at interior accurate adjustment etching inclination angle in a big way.
Description
Technical field
The present invention relates to LED component manufacture field, more particularly to a kind of method of etching.
Background technology
As world energy sources demand is constantly surging, natural resources is increasingly short, government of the power consumption big country pole of each industry prosperity
The development of degree concern power-saving technology.The continuous progress of GaN base light emitting (Light Emitting Diode, LED) technology,
Particularly blue light excitated fluorescent powder sends the maturation that gold-tinted is mixed into white light technology so that and normal lighting can realize low cost,
High life.National governments propose solid state lighting revolution plan one after another, have been greatly facilitated technology and its relative leds skill
Art develops rapidly.GaN base LED is with the excellent specific property such as its long lifespan, impact resistance, antidetonation, energy-efficient image is shown, signal refers to
Show, illuminate and basic research etc. has extremely wide application prospect.
At present, wavelength 460nm GaN base LED internal quantum efficiency has reached more than 70%, purple as the AlGaN of substrate using GaN
Outer light (UV) LED internal quantum efficiency is up to more than 80%.Relatively difficult, usual GaN base is prepared additionally, due to GaN single crystal
LED component is all prepared in Sapphire Substrate, and in order to improve the light extraction efficiency of LED component, PSS technologies have been invented
Come.In the gallium nitride layer and multiple quantum well layer of PSS substrates different doping types deposited over, pass through the electrode etch of gallium nitride
(i.e. mesa etchings), LED P electrode is made with N electrode, in case later stage electrode evaporation and line or follow-up connection.
And the N electrode and follow-up connection that the later stage is deposited for GaN base LED etching inclination angle present position play very big shadow
Ring, the angle at the inclination angle needs to cater to the requirement of subsequent technique.By adjusting process formula in traditional handicraft, such as radio-frequency power
Size adjustment etching inclination angle, but influenceed by etch rate, etching selection ratio, the angle adjustment scope at inclination angle is small, and can not be simultaneous
Care for the requirement of cosmetic injury.
Therefore, seek it is a kind of can the lithographic method of the angle at interior accurate adjustment etching inclination angle in a big way be one urgently
The problem of to be solved.
The content of the invention
Based on this, it is necessary to provide a kind of method for the etching that flexibly can accurately adjust etching inclination angle.
To realize a kind of method of etching of the object of the invention offer, comprise the following steps：
In the top of the gallium nitride layer of gallium nitride based LED device, photoresist layer and the hard mask layer of preset thickness are set；
The gallium nitride based LED device is subjected to N electrode etching under default etch recipe, obtains the gallium nitride base
The N electrode of LED component.
As a kind of embodiment, the hard mask layer is aluminium mask layer, or nickel mask layer, or earth silicon mask
Layer.
As a kind of embodiment, the hard mask layer is between the photoresist layer and the gallium nitride layer.
As a kind of embodiment, the photoresist layer is between the hard mask layer and the gallium nitride layer.
As a kind of embodiment, the photoresist layer includes the first photoresist layer and the second photoresist layer, sets suitable
Sequence is followed successively by from top to bottom：First photoresist layer, hard mask layer, the second photoresist layer, gallium nitride layer.
As a kind of embodiment, the preset thickness of the hard mask layer is 5nm~20 μm.
As a kind of embodiment, what the preset thickness of the hard mask layer etched with gallium nitride based LED device N electrode
N electrode etches the increase at inclination angle and increased.
As a kind of embodiment, the photoresist layer is the photoresist layer with inclination angle.
As a kind of embodiment, the aluminium mask layer or nickel mask layer are prepared by sputter deposition, and described two
Silicon oxide masking film layer is prepared by plasma activated chemical vapour deposition method.
As a kind of embodiment, default etch recipe is：Process atmospheric pressures are 3~12mT, upper electrode power is 300~
1200W, lower electrode power are 80~200W, and process gas is 60~120sccm Cl2With 5~60sccm BCl3, process warm
Spend for -20~40 degrees Celsius.
Beneficial effects of the present invention include：
The method of etching provided by the invention, sets up hard mask layer in gallium nitride based layer, so as to be covered firmly by adjustment
The thickness adjustment etching inclination angle of film layer.The thickness setting of hard mask layer can be adjusted accurately, therefore can be in interior accurate tune in a big way
Whole etching inclination angle.
Brief description of the drawings
Fig. 1 is a kind of flow chart of a specific embodiment of the method for etching of the present invention；
Fig. 2-1 to Fig. 2-4 is each layer change in process in an a kind of specific embodiment of the method for etching of the present invention
Situation schematic diagram；
Fig. 3-1 to Fig. 3-3 becomes for each layer in process in a kind of another specific embodiment of the method for etching of the present invention
Change situation schematic diagram.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, below in conjunction with accompanying drawing to of the invention real
The embodiment for applying the method for the etching of example illustrates.It should be appreciated that specific embodiment described herein is only used
To explain the present invention, it is not intended to limit the present invention.
The method of the etching of the embodiment of the present invention, as shown in figure 1, comprising the following steps：
S100, photoresist layer and the hard mask of preset thickness are set in the top of the gallium nitride layer of gallium nitride based LED device
Layer.The preset thickness is to obtain the thickness of hard membrane layer by testing according to default etching inclination angle, and the photoetching coordinated with it
The thickness of glue (PR) layer.In semiconductor etching field, mask is divided into the hard major class of mask and softmask two, and common photoresist belongs to
Softmask, easily it is etched.After increasing hard mask layer, the more difficult consumption of hard mask layer in etching process, and the gallium nitride of bottom
Material can be etched downwards always, form etching inclination angle.Therefore the size at inclination angle can be adjusted by the thickness of hard mask layer.
S200, the gallium nitride based LED device is subjected to N electrode etching under default etch recipe, obtains the nitridation
The N electrode of gallium base LED component.The gallium nitride based LED device of hard mask layer and photoresist layer will be set according to traditional etching
Method and etch recipe perform etching.
The method of the etching of the embodiment of the present invention, sets up hard mask layer in gallium nitride based layer, because in etching process
The more difficult consumption of hard mask layer, and the gallium nitride material of bottom can be etched downwards always, so as to by adjusting hard mask layer
Thickness adjustment etching inclination angle.The thickness setting of hard mask layer can be adjusted accurately, therefore can be in interior accurate adjustment etching in a big way
Inclination angle.
The preferable hard mask layer is aluminium mask layer.In other embodiments of the invention, the hard mask layer also may be used
Think nickel mask layer, silicon dioxide mask layer, or other similar hard mask layers.The aluminium mask layer, nickel mask layer can lead to
Prepared by the methods of crossing sputtering sedimentation (Sputter), the silicon dioxide mask layer can pass through plasma activated chemical vapour deposition
(PECVD) it is prepared by the methods of.
In one of the embodiments, the hard mask layer is between the photoresist layer and the gallium nitride layer.Exist
Hard mask layer is provided with above gallium nitride based layer, the top of hard mask layer sets photoresist layer.
In one of the embodiments, the photoresist layer is between the hard mask layer and the gallium nitride layer.Will be hard
Mask layer is arranged on the top of photoresist layer, can equally play a part of adjustment etching inclination angle.
In one of the embodiments, the photoresist layer includes the first photoresist layer and the second photoresist layer, and described
The setting order of one photoresist layer, the second photoresist layer, hard mask layer, and gallium nitride layer is followed successively by from top to bottom：First photoetching
Glue-line, hard mask layer, the second photoresist layer, gallium nitride layer.The embodiment sets photoetching respectively up and down the hard mask layer
Glue-line.Make the adjustment at etching inclination angle easier using the method.The method is discussed in detail in the narration below.
Preferably, the preset thickness of the hard mask layer is 5nm~20 μm.In in general gallium nitride based LED electrode etch
In, when N electrode etching depth is about 1.2um~1.8 μm, thickness can be used to adjust etching for the aluminium mask layer of 5nm~20 μm
Inclination angle is in the range of actual use is adapted to.
Preferably, the N electrode etching that the preset thickness of the hard mask layer etches with gallium nitride based LED device N electrode is inclined
The increase at angle and increase.Because hard mask layer more difficult consumption in electrode etch, therefore, when intentionally getting larger etching inclination angle
When can increase the thickness of hard mask layer, on the contrary, expect it is less etching inclination angle when, can be set relatively small thickness hard mask layer.
Change without regard to technical recipe.And identical etching inclination angle result can be obtained when producing in batches, by lots processed
Electrical configurations differentia influence is small.It is accurate to etch pitch angle control, and production efficiency is high.
In one of the embodiments, can by adjusting the technological parameter of gold-tinted technique, such as different exposure powers and
Time for exposure, exposure intensity, and developing process, produce the different photoresist layer in inclination angle.Because the etching of gallium nitride layer is inclined
Angle is easily influenceed by photoresist layer inclination angle, so as to which photoresist layer can be combined with hard mask layer, common adjustment etching inclination angle.Carry
High efficiency, at the same can avoid bringing by way of gold-tinted technique sets photoresist layer inclination angle merely it is exposed and developed partially
Difference, cause to etch the problem of inclination angle is inconsistent.
Preferably, the N electrode etching is carried out using inductively coupled plasma etching machine.This is carved for more ripe electrode
Etching method, ensure the effect and production efficiency of processing.
Preferably, default etch recipe is：Process atmospheric pressures are 3~12mT, and upper electrode power (SRF) is 300~1200W,
Lower electrode power (BRF) is 80~200W, and process gas is 60~120sccm Cl2With 5~60sccm BCl3, technological temperature
For -20~40 degrees Celsius.Technique is carried out according to the appropriate technical recipe of actual selection in this processing range, can be obtained predetermined
Etch inclination angle.
Below using aluminium mask layer as hard mask layer, and exemplified by the mode being arranged between two layers of photoresist layer, specifically
The change of each mask layer in bright etching engineering, and the change at etching inclination angle.
As shown in Fig. 2-1, the second photoresist layer 103 has been sequentially arranged above in gallium nitride layer 104, aluminium mask thin layer 102,
First photoresist layer 101.The aluminium mask thin layer is the aluminium mask layer of thinner thickness.When etching beginning, on aluminium mask thin layer
First photoresist layer 101 of side first consumes, and gallium nitride layer 104 is etched simultaneously.It is thin followed by aluminium mask thin layer 102 and aluminium mask
The second photoresist layer 103 below layer 102.Etching inclination angle as needed, to adjust the thickness of aluminium mask layer, now covered for aluminium
Film thin layer, it is as follows for aluminium mask thin layer etching process on the premise of fixing using same etch recipe：
After etching starts, as shown in Fig. 2-2, the first photoresist layer 101 starts to shrink at, and aluminium mask thin layer 102 is exposed,
In etch aluminum mask thin layer 102, because the gallium nitride layer 104 of the 102 more difficult consumption of aluminium mask thin layer, but bottom can be downward always
Etching, thus etch inclination angle can increase, as Figure 2-3, and when aluminium mask thin layer 102 be consumed start to inside contract when, below
Second photoresist layer 103 is exposed, and the small turning 105 that gallium nitride layer 104 is formed when etching different masks can be by more
The bombardment of plasma and etching, finally tied.Simultaneously because the second photoresist layer 103 is softmask, etching inclination angle also can be slightly
Micro- fall after rise reduces.After etching terminates, a relatively small step in etching inclination angle is obtained as in Figure 2-4.
When needing larger etching inclination angle, as shown in figure 3-1, when the larger aluminium mask layer 1020 of thickness is set, etching process
It is as follows：
After etching starts, as shown in figure 3-2, the first photoresist layer of top 101 starts to shrink at, and aluminium mask layer 1020 exposes
, in etch aluminum mask layer 1020, due to the 1020 more difficult consumption of aluminium mask layer, but the material of gallium nitride layer 104 of bottom understands one
It is straight to carve downwards, therefore etching inclination angle can be increased as shown in Fig. 3-3, because the thickness of aluminium mask layer 1020 is sufficiently thick, therefore carved
(reach desired etching depth) at the end of erosion, aluminium mask layer 1020 does not also run out of, therefore etching angle is bigger always.
The method that etching inclination angle is controlled with aluminium mask layer thickness, according to required tilt angles, fixed etch recipe,
The thickness of aluminium mask required for can finding out.Obviously, the change that the excursion of the thickness to etch inclination angle is much larger than
Change of pitch angle scope caused by the change of power in etch recipe.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more specific and detailed, but simultaneously
Therefore the limitation to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (7)
- A kind of 1. method of etching, it is characterised in that comprise the following steps：In the top of the gallium nitride layer of gallium nitride based LED device, photoresist layer and the hard mask layer of preset thickness are set；The photoresist layer includes the first photoresist layer and the second photoresist layer, and setting order is followed successively by from top to bottom：Described One photoresist layer, the hard mask layer, second photoresist layer, and the gallium nitride layer；The gallium nitride based LED device is subjected to N electrode etching on the premise of fixing using same etch recipe, obtains institute State the N electrode of gallium nitride based LED device.
- 2. the method for etching according to claim 1, it is characterised in that the hard mask layer is aluminium mask layer, or nickel is covered Film layer, or silicon dioxide mask layer.
- 3. the method for etching according to claim 1, it is characterised in that the preset thickness of the hard mask layer be 5nm~ 20μm。
- 4. the method for etching according to claim 1, it is characterised in that the preset thickness of the hard mask layer is with gallium nitride The N electrode of base LED component N electrode etching etches the increase at inclination angle and increased.
- 5. the method for etching according to claim 1, it is characterised in that the photoresist layer is the photoresist with inclination angle Layer.
- 6. the method for etching according to claim 2, it is characterised in that the aluminium mask layer or nickel mask layer pass through sputtering Prepared by deposition process, the silicon dioxide mask layer is prepared by plasma activated chemical vapour deposition method.
- 7. the method for the etching according to any one of claim 1 to 6, it is characterised in that the default etch recipe is：Work Skill air pressure is 3~12mT, and upper electric level power is 300~1200W, and lower electrode power is 80~200W, process gas is 60~ 120sccm Cl2With 5~60sccm BCl3, etching temperature is -20~40 degrees Celsius.
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| CN107731680B (en) * | 2017-11-16 | 2019-10-15 | 长江存储科技有限责任公司 | A kind of channel hole etching technics using hard exposure mask |
| CN115376908A (en) * | 2022-08-26 | 2022-11-22 | 北京北方华创微电子装备有限公司 | Etching method of GaN substrate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102064242A (en) * | 2010-11-03 | 2011-05-18 | 中国科学院半导体研究所 | Method for manufacturing high-extraction efficiency gallium nitride light-emitting diode |
| CN103000770A (en) * | 2011-09-15 | 2013-03-27 | 张庆 | New process for controlling array type high-voltage LED side-wall inclination angle |
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| JP5265537B2 (en) * | 2006-07-13 | 2013-08-14 | セルアーティス アーベー | A novel population of pluripotent cardiac progenitor cells derived from human blastocyst-derived stem cells |
| JP5022683B2 (en) * | 2006-11-30 | 2012-09-12 | 株式会社東芝 | Manufacturing method of semiconductor device |
| EP2211373A1 (en) * | 2007-10-31 | 2010-07-28 | Mitsubishi Chemical Corporation | Etching method and method for manufacturing optical/electronic device using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102064242A (en) * | 2010-11-03 | 2011-05-18 | 中国科学院半导体研究所 | Method for manufacturing high-extraction efficiency gallium nitride light-emitting diode |
| CN103000770A (en) * | 2011-09-15 | 2013-03-27 | 张庆 | New process for controlling array type high-voltage LED side-wall inclination angle |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Beijing, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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