CN103811602A - GaN-base LED chip making method - Google Patents
GaN-base LED chip making method Download PDFInfo
- Publication number
- CN103811602A CN103811602A CN201210448826.5A CN201210448826A CN103811602A CN 103811602 A CN103811602 A CN 103811602A CN 201210448826 A CN201210448826 A CN 201210448826A CN 103811602 A CN103811602 A CN 103811602A
- Authority
- CN
- China
- Prior art keywords
- sapphire substrate
- led chip
- gan
- base led
- gan base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 67
- 239000010980 sapphire Substances 0.000 claims abstract description 67
- 238000005520 cutting process Methods 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 238000002360 preparation method Methods 0.000 claims description 18
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 abstract description 21
- 230000000694 effects Effects 0.000 abstract description 15
- 238000005336 cracking Methods 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 44
- 235000012431 wafers Nutrition 0.000 description 10
- 238000000227 grinding Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 208000014674 injury Diseases 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Dicing (AREA)
Abstract
The invention provides a GaN-base LED chip making method. The GaN-base LED chip making method comprises steps that: 1) a sapphire substrate is provided, and the sapphire substrate comprises a first surface and a second surface opposite to the first surface; 2), invisible cutting is carried out at a preset height near the first surface of the sapphire substrate to generate micro cracks at the first surface along the cutting line; 3), a GaN semiconductor layer is formed at the first surface of the sapphire substrate; 4), a transparent conduction layer, an N electrode and a P electrode are formed on the GaN semiconductor layer; 5), the sapphire substrate is thinned at one side of the second surface of the sapphire substrate; and 6), splintering is carried out. Through the GaN-base LED chip making method, a problem of an edge effect generated when right side scribing technology is employed in the prior art is solved, a problem that cracking can not be realized when internal invisible cutting is employed can further be solved, and brightness of the chip is further improved.
Description
Technical field
The present invention relates to the preparation field of semi-conducting material, relate in particular to a kind of GaN base LED chip preparation method.
Background technology
GaN based light-emitting diode (Light Emitting Diode, be abbreviated as LED) there is long, shock-resistant, antidetonation of life-span, the advantageous feature such as energy-efficient, there is application prospect very widely at aspects such as image demonstration, signal designation, illumination and basic research.GaN based light-emitting diode development in recent years is swift and violent, and LED chip technique is day by day ripe, and the brightness and the yield that improve LED chip are most important work of present stage.Improve the brightness of LED chip and yield and should be noted that coordinating of epitaxy technique and chip technology.In addition, wavelength uniformity is a very large factor that affects yield, and it determines by epitaxy technique part, and follow-up chip technology cannot be carried out any change to wavelength uniformity again.In addition, with regard to improving wavelength uniformity, can be carrying out substrate being carried out to the adjustment such as Stress Release before epitaxial growth, while making epitaxial growth, wavelength better regulates and controls, and improves thus consistent wavelength and improves overall yield.
The general technology of preparation GaN base LED chip is at present: 1) above prepare GaN semiconductor layer by epitaxial growth in plain film Sapphire Substrate or graphical sapphire substrate (Patterned Sapphire Substrate, is abbreviated as PSS); 2) GaN base wafer is processed to prepare N electrode and P electrode, and and then carry out this wafer of attenuate by grinding; 3) adopt backside laser scribing technology to carry out scribing process; 4) obtain GaN base LED chip by carrying out front sliver.But, adopt backside laser can make sapphire side because the effect of laser energy becomes coke black, affect the side bright dipping of chip, brightness has loss.As mentioned above, after epitaxial growth, the wavelength of GaN base LED chip is determined immediately, for improving wavelength uniformity, can be adopted following technique: 1) provide plain film Sapphire Substrate or graphical sapphire substrate thus; 2) carry out front laser scribing; 3) prepare GaN semiconductor layer by epitaxial growth at substrate; 4) GaN base wafer is processed to prepare N electrode and P electrode, and and then carry out this wafer of attenuate by grinding; 5) carry out back side sliver.This technique can be improved the uniformity of wavelength, but scratches because laser straight is connected on front, while causing epitaxial growth the edge effect of line place very obvious, the consistency of growth and surface appearance are all poor.Therefore, improve the inhomogeneity effect of wavelength for reaching, can reduce again the edge effect of line place, stealth cutting is used in above-mentioned technique, replaced front laser scribing step.But, while adopting this technique to manufacture GaN base LED chip, find the cut point that inner stealthy cutting forms, in follow-up epitaxial growth and chip technology process due to temperature and pressure-acting, make original cut point generation injury recovery, while causing final back side sliver, cannot split.
Therefore, need to propose a kind of technique, the edge effect problem that it occurs can solve above-mentioned employing front scribing process time, can solve again and adopt the problem that cannot split after inner stealthy cutting, can also promote in addition brightness.
Summary of the invention
The shortcoming of prior art in view of the above, the invention provides a kind of preparation method of GaN base LED chip, for solve that prior art exists employing front scribing process time the edge effect that occurs and adopt the problem that cannot split after inner stealthy cutting.
The present invention adopts following technical scheme: a kind of preparation method of GaN base LED chip, comprises the steps:
1) provide Sapphire Substrate, it comprises first surface and the second surface relative with described first surface;
2) carry out stealth cutting at a preset height place of the described first surface of nearly described Sapphire Substrate, make first surface produce micro-crack along line of cut;
3) form GaN semiconductor layer at the described first surface of described Sapphire Substrate;
4) on described GaN semiconductor layer, form transparency conducting layer, N electrode and P electrode;
5) from Sapphire Substrate described in a side attenuate at the second surface place of described Sapphire Substrate; And
6) carry out sliver.
Preferably, described preset height is in the scope of 1 μ m to 5 μ m from the described first surface of described Sapphire Substrate, and micro-crack width is at 0.1 μ m to 2 μ m.
Preferably, described preset height is in the scope of 2 μ m to 4 μ m from the described first surface of described Sapphire Substrate, and micro-crack width is at 0.5 μ m to 1.5 μ m.
Preferably, described preset height is in the scope of 2.5 μ m from the described first surface of described Sapphire Substrate, and micro-crack width is within the scope of 1 μ m.
Preferably, described Sapphire Substrate is plain film or graphical sapphire substrate.
Preferably, described step 5) from Sapphire Substrate described in a side attenuate at the second surface place of described Sapphire Substrate between 70-200 μ m.
Preferably, adopt evaporation to form transparency conducting layer in described step 4), its thickness is between 500 ~ 4000.
The problem of the edge effect occurring while the invention solves the employing front scribing process existing in prior art, and adopt the problem that cannot split after inner stealthy cutting, can also promote the brightness of chip simultaneously.
Accompanying drawing explanation
Fig. 1 is the preparation method's of GaN base LED chip of the present invention schematic flow sheet.
Fig. 2 to Fig. 9 is the schematic diagram of preparing GaN base LED chip according to the flow process shown in Fig. 1.
Element numbers explanation
Embodiment
By particular specific embodiment, embodiments of the present invention are described below, person skilled in the art scholar can understand other advantages of the present invention and effect easily by the disclosed content of this specification.
Refer to Fig. 1 schematic flow sheet.Notice, appended graphic the illustrated structure of this specification, ratio, size etc., all contents in order to coordinate specification to disclose only, understand and read for person skilled in the art scholar, not in order to limit the enforceable qualifications of the present invention, therefore the not technical essential meaning of tool, the adjustment of the modification of any structure, the change of proportionate relationship or size, not affecting under effect that the present invention can produce and the object that can reach, all should still drop on disclosed technology contents and obtain in the scope that can contain.Simultaneously, in this specification, quote as " on ", the term of D score, " left side ", " right side ", " centre " and " " etc., also only for ease of understanding of narrating, but not in order to limit the enforceable scope of the present invention, the change of its relativeness or adjustment, changing under technology contents, when being also considered as the enforceable category of the present invention without essence.
The preparation method of GaN base LED chip of the present invention comprises the steps: 1) Sapphire Substrate is provided, it comprises first surface and the second surface relative with described first surface; 2) carry out stealth cutting at a preset height place of the described first surface of nearly described Sapphire Substrate, make first surface produce micro-crack along line of cut; 3) form GaN semiconductor layer at the described first surface of described Sapphire Substrate; 4) on described GaN semiconductor layer, form transparency conducting layer, N electrode and P electrode; 5) from Sapphire Substrate described in a side attenuate at the second surface place of described Sapphire Substrate; And 6) carry out sliver.
Fig. 1 is the schematic flow sheet that the preparation method of 1 GaN base LED chip according to the embodiment of the present invention prepares GaN base LED chip.As shown in Figure 1, described preparation method comprises the steps:
S101, provides Sapphire Substrate;
S103, carries out stealth cutting at Sapphire Substrate near surface;
S105, forms GaN semiconductor layer;
S107, implements chip technology; And
S109, sliver.
Describe according to the embodiment of the present invention the preparation method of 1 GaN base LED chip in detail below in conjunction with Fig. 2 to Fig. 9.Particularly, first perform step S101, Sapphire Substrate is provided.The substrate that used is in the present embodiment plain film Sapphire Substrate 101, and as shown in Figure 2, diameter is in the scope of 2 inches to 6 inches for its front view.Grinding and polishing is carried out on a surface to plain film Sapphire Substrate 101, its polished one side is called to first surface (positive), and a surface relative with this first surface is called to second surface (being the back side).In addition, it should be noted, as the substrate in present embodiment, also can use graphical sapphire substrate (Patterned Sapphire Substrate).
Then perform step S103, carry out stealth cutting at the near surface of plain film Sapphire Substrate 101.This stealth cutting process is that the equipment by using in basic stealthy cutting technique completes.This equipment uses collector lens short-pulse laser to be converged to the inside of workpiece to be cut, forms metamorphic layer at described inside workpiece, by methods such as expansion glued membranes, this workpiece is divided into chip.In the present embodiment, short-pulse laser is gathered near the first surface of plain film Sapphire Substrate 101 by a collector lens, cut along stealthy line of cut 102, due to effect of stress, make its first surface place that approaches of plain film Sapphire Substrate 101 there is slight crackle.Particularly, wave band, frequency, power by controlling laser be to the pulse of described Sapphire Substrate Emission Lasers, so that the surface texture of described Sapphire Substrate produces strain or lax, and has the vestige of splitting approaching surface.In the present embodiment, adopt picosecond laser to carry out the processing of laser inscribe to described Sapphire Substrate, it is 1064nm or 532nm that laser inscribe is processed the laser wavelength adopting, and laser frequency is 50 ~ 100KHz, and laser power is 0.05 ~ 10W.But the present invention is not limited to this, can completes and show that the laser of stealthy cutting also can be applied in the present invention.In the present embodiment, carry out stealth cutting in the scope that plays 1 μ m to 5 μ m apart from the first surface of plain film Sapphire Substrate 101, due to effect of stress, make first surface produce micro-crack along line of cut, this micro-crack width is at 0.1 μ m to 2 μ m.Preferably in the scope that plays 2 μ m to 4 μ m apart from the first surface of plain film Sapphire Substrate 101, carry out stealth cutting, make first surface produce micro-crack along line of cut, this micro-crack width is at 0.5 μ m to 1.5 μ m.。Preferably carry out stealth cutting playing 2.5 μ m places apart from the first surface of plain film Sapphire Substrate 101, make first surface produce micro-crack along line of cut, this micro-crack width is within the scope of 1 μ m.
The front view of plain film Sapphire Substrate 101 full wafers after stealth cutting is as shown in Fig. 3 (a), and its surface local schematic diagram is as Fig. 3 (b).Adopt stealthy cutting can effectively improve the LED brightness that uses GaN base LED chip of the present invention and prepare.In addition, by adopting stealthy cutting technique, can implement high-speed cutting to wafer to the ultra thin wafer that did not carry out milled processed; And, because whole process is white drying processing, so needn't clean the wafer after cutting, can reduce production costs, boost productivity.
Then perform step S105, form GaN semiconductor layer.Its front view as shown in Figure 4 (a), comprises the N-type GaN layer 103, luminous zone 104 and the P type GaN layer 105 that are formed on successively on substrate.Be formed with this GaN semiconductor layer plain film Sapphire Substrate 101 vertical view as shown in Figure 4 (b).In the present embodiment, the formation of above-mentioned GaN semiconductor layer can adopt the method for conventional epitaxial growth GaN layer of the prior art, for example metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE) or vapour phase epitaxy (VPE) method complete, and do not repeat them here.
Then carry out step S107, implement chip technology.Particularly, this chip technology comprises the steps: 1) local lithography step: utilize photoetching and lithographic technique to carry out local etching, part n type gallium nitride layer 103 is exposed.Implemented front view after local lithography step as shown in Fig. 5 (a); Vertical view is as shown in Fig. 5 (b).2) conductive layer forms step: on 105 layers, P type GaN layer, form conductive layer 106, as shown in Figure 6.Wherein, conductive layer 106 is transparency conducting layer; 3) electrode forms step: utilize photoetching and evaporation coating technique on N-type GaN layer 103, to form on N electrode 107 and P type GaN layer 105 and form P electrode 108, as shown in Figure 7; 4) diaphragm deposition step: form protective film 109 on N-type GaN layer 103, P type GaN layer 105 and N electrode 107 and P electrode 108, as shown in Figure 8; 5) attenuate step: utilize grinding and polishing technology by wafer grinding, as shown in Figure 9.
Conductive layer in said chip technique forms in step, and conductive layer 106 is to adopt indium tin oxide or nickel gold to make by electron beam evaporation deposition technology, or also can make by stacked indium tin oxide layer and nickel-gold layer.But be not limited to this, also can adopt other conventional methods that are used to form conductive layer to generate conductive layer 106.The thickness d of conductive layer 106 is in the scope of 2000 dust to 4000 dusts.In addition, form in step at electrode, N electrode 107 and P electrode 108 adopt photoetching and evaporation coating technique to carry out stacked two or more metal levels and obtain, and wherein above-mentioned two or more metal is to be selected from the group who is mainly made up of chromium, nickel, platinum, gold, this different materials of aluminium.In addition, form in step at diaphragm, protective film 109 is by utilizing plasma chemical vapor deposition technique to form, but is not limited to this, and other conventional thin layer formation methods also can be used in the present invention.Protective film 109 is to adopt silicon dioxide or silicon nitride to form.In attenuate step, from the back side of plain film Sapphire Substrate 101, by grinding and polishing technology, plain film Sapphire Substrate 101 is thinned to the thickness range of 70um to 200um.
Finally, execution step S109, carries out sliver.Particularly, from the back side of plain film Sapphire Substrate 101, after starting point is carried out sliver, can prepare GaN base LED chip take stealthy line of cut 102.In addition, carrying out in the process of sliver, can according to actual needs, add with having hammered back side sliver process into shape.
By the GaN base LED chip that adopts the method for above-mentioned execution mode to prepare, prepare GaN base LED chip with the existing chip technology of employing and compare.In the former technique, be to have adopted at plain film Sapphire Substrate 101 near surfaces to carry out stealth cutting, carry out stealth cutting in the position of plain film Sapphire Substrate 101 internal deviation near surfaces and adopted in the latter's technique.Except this difference, both adopt same material, make by same epitaxial furnace.Experiment shows, the chip of preparing by existing chip technology, and monolithic wavelength uniformity is 82%, and can reach 94% by method of the present invention, has improved 14.6%., the wavelength chip that is 450nm to 460nm accounts for the ratio of the wave-length coverage (being generally: 440nm to 470nm) by full wafer being carried out to all chips that sliver obtains wherein, monolithic wavelength uniformity refers to wave band accounting rate.In addition, under equal conditions tested respectively the brightness of the GaN base LED chip obtaining by normal process and new technology of the present invention.Result represents, the brightness of the GaN base LED chip obtaining by normal process is 1:1.07 with the ratio of the brightness of the GaN base LED chip obtaining by new technology of the present invention,, brightness can be improved to 7% according to new technology of the present invention.
Because the surface of Sapphire Substrate is not generally super smooth, there is certain angularity, be difficult to thus control laser and carry out stealth cutting on surface.Due to this reason, same domain technical staff can get rid of at Sapphire Substrate near surface and carries out stealth cutting, cuts and be chosen in interior location darker from surface.But, if not the near surface in Sapphire Substrate, but showing that except above-mentioned Wai Geng position, region carries out that inside is stealthy cuts while forming cut point, in follow-up epitaxial growth and chip technology process due to temperature and pressure-acting, make original cut point place that injury recovery occur, while likely causing final back side sliver, cannot split.The present invention, owing to carrying out stealth cutting at nearly substrate surface, carries out stealth cutting so the identification capability of the effects on surface angularity of cutting machine own is better than in inside; Secondly,, in the present embodiment, can adopt and increase chassis suction sheet ability, thereby warpage is weakened; Finally reach effect of the present invention.
In sum, the present invention has effectively overcome various shortcoming of the prior art and tool high industrial utilization.Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all can, under spirit of the present invention and category, modify or change above-described embodiment.Therefore, such as in affiliated technical field, have and conventionally know that the knowledgeable, not departing from all equivalence modifications that complete under disclosed spirit and technological thought or changing, must be contained by claim of the present invention.
Claims (7)
1. a preparation method for GaN base LED chip, is characterized in that comprising the steps:
1) provide Sapphire Substrate, it comprises first surface and the second surface relative with described first surface;
2) carry out stealth cutting at a preset height place of the described first surface of nearly described Sapphire Substrate, make first surface produce micro-crack along line of cut;
3) form GaN semiconductor layer at the described first surface of described Sapphire Substrate;
4) on described GaN semiconductor layer, form transparency conducting layer, N electrode and P electrode;
5) from Sapphire Substrate described in a side attenuate at the second surface place of described Sapphire Substrate; And
6) carry out sliver.
2. the preparation method of GaN base LED chip according to claim 1, is characterized in that: described preset height is in the scope of 1 μ m to 5 μ m from the described first surface of described Sapphire Substrate, and crack width is at 0.1 μ m to 2 μ m.
3. the preparation method of GaN base LED chip according to claim 2, is characterized in that: described preset height is in the scope of 2 μ m to 4 μ m from the described first surface of described Sapphire Substrate, and crack width is at 0.5 μ m to 1.5 μ m.
4. the preparation method of GaN base LED chip according to claim 3, is characterized in that: described preset height is in the scope of 2.5 μ m from the described first surface of described Sapphire Substrate, and crack width is within the scope of 1 μ m.
5. the preparation method of GaN base LED chip according to claim 1, is characterized in that: described Sapphire Substrate is plain film or graphical sapphire substrate.
6. the preparation method of GaN base LED chip according to claim 1, is characterized in that: described step 5) from Sapphire Substrate described in a side attenuate at the second surface place of described Sapphire Substrate between 70-200 μ m.
7. the preparation method of GaN base LED chip according to claim 1, is characterized in that: in described step 4), adopt evaporation to form transparency conducting layer, its thickness is between 500 ~ 4000.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210448826.5A CN103811602A (en) | 2012-11-09 | 2012-11-09 | GaN-base LED chip making method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210448826.5A CN103811602A (en) | 2012-11-09 | 2012-11-09 | GaN-base LED chip making method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103811602A true CN103811602A (en) | 2014-05-21 |
Family
ID=50708087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210448826.5A Pending CN103811602A (en) | 2012-11-09 | 2012-11-09 | GaN-base LED chip making method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103811602A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108666212A (en) * | 2018-05-02 | 2018-10-16 | 南方科技大学 | A kind of LED chip production method |
| CN112786741A (en) * | 2019-11-11 | 2021-05-11 | 厦门市三安光电科技有限公司 | Manufacturing method of LED chip and product thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100311313A1 (en) * | 2007-11-30 | 2010-12-09 | Hamamatsu Photonics K.K. | Working object grinding method |
| US20110174787A1 (en) * | 2010-01-21 | 2011-07-21 | Ide Mitsuhiro | Laser dicing apparatus |
| CN102290505A (en) * | 2011-09-09 | 2011-12-21 | 上海蓝光科技有限公司 | GaN-base light-emitting diode chip and manufacturing method thereof |
| TW201222864A (en) * | 2010-11-16 | 2012-06-01 | Epistar Corp | Light-emitting diode chip and the manufacturing method thereof |
-
2012
- 2012-11-09 CN CN201210448826.5A patent/CN103811602A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100311313A1 (en) * | 2007-11-30 | 2010-12-09 | Hamamatsu Photonics K.K. | Working object grinding method |
| US20110174787A1 (en) * | 2010-01-21 | 2011-07-21 | Ide Mitsuhiro | Laser dicing apparatus |
| TW201222864A (en) * | 2010-11-16 | 2012-06-01 | Epistar Corp | Light-emitting diode chip and the manufacturing method thereof |
| CN102290505A (en) * | 2011-09-09 | 2011-12-21 | 上海蓝光科技有限公司 | GaN-base light-emitting diode chip and manufacturing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108666212A (en) * | 2018-05-02 | 2018-10-16 | 南方科技大学 | A kind of LED chip production method |
| CN112786741A (en) * | 2019-11-11 | 2021-05-11 | 厦门市三安光电科技有限公司 | Manufacturing method of LED chip and product thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102290505B (en) | GaN-base light-emitting diode chip and manufacturing method thereof | |
| CN102324450A (en) | GaN-based light emitting diode chip and preparation method thereof | |
| CN107538136A (en) | It is a kind of to utilize the method for being cut by laser sapphire substrate LED chip | |
| CN102751398B (en) | Manufacturing method for inverted triangle light emitting diode chip | |
| CN106374020B (en) | A kind of production method and its thin film chip of thin film chip | |
| CN104599960A (en) | Laser cutting method for high-power power electronic device wafer | |
| CN102544250A (en) | Manufacturing method of GaN-based light-emitting diode | |
| CN101604718A (en) | A kind of laterally inclined light-emitting diode chip for backlight unit and preparation method thereof | |
| CN102709422A (en) | Semiconductor light-emitting device and preparation method thereof | |
| CN109786524A (en) | A kind of LED epitaxial layer and preparation method thereof with novel PSS structure | |
| CN101814565A (en) | Structure of light emitting diode chip and manufacture method thereof | |
| CN106328778B (en) | Stealth cutting preparation just, fall and inverted trapezoidal mesa-shaped substrate LED chip method | |
| Yan et al. | A vertical AlGaN DUV light-emitting diode fabricated by wafer bonding and sapphire thinning technology | |
| CN103811602A (en) | GaN-base LED chip making method | |
| CN105914267B (en) | A method of preparing sapphire substrate LED chip using laser cutting | |
| CN103137810B (en) | A kind of GaN base light-emitting diode chip for backlight unit utilizing twice scribing to prepare and preparation method thereof | |
| CN101882659A (en) | Light-emitting diode chip and method for manufacturing same | |
| CN101807648B (en) | Introduction-type roughening nitrogen polar surface gallium nitride based light-emitting diode and manufacturing method thereof | |
| CN109545930A (en) | A kind of manufacturing process improving flip LED chips luminous efficiency | |
| CN102837369B (en) | Process method for green laser scribing sapphire | |
| CN110690327B (en) | Preparation method of high-brightness purple light LED chip and LED chip | |
| CN208400832U (en) | A kind of stealthy cutting LED chip | |
| CN201985156U (en) | Light-emitting diode (LED) wafer with high extraction efficiency | |
| WO2020177026A1 (en) | Light-emitting diode and manufacturing method therefor | |
| CN105679891A (en) | Fabrication method for light emitting diode chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140521 |
|
| RJ01 | Rejection of invention patent application after publication |