CN102886609A - Multi-focus femtosecond laser scribing method applied to separation of light emitting diode (LED) device - Google Patents
Multi-focus femtosecond laser scribing method applied to separation of light emitting diode (LED) device Download PDFInfo
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- CN102886609A CN102886609A CN2012103090674A CN201210309067A CN102886609A CN 102886609 A CN102886609 A CN 102886609A CN 2012103090674 A CN2012103090674 A CN 2012103090674A CN 201210309067 A CN201210309067 A CN 201210309067A CN 102886609 A CN102886609 A CN 102886609A
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Abstract
The invention discloses a multi-focus femtosecond laser scribing method applied to separation of light emitting diode (LED) device. The multi-focus femtosecond laser scribing method comprises the following steps of: fixing a prepared LED device on a horizontal mobile platform and positioning the prepared LED device in an imaging center of charge coupled device (CCD) imaging equipment; 2, placing a plurality of lenses on a laser light path of a femtosecond laser, and dividing laser into a plurality of focuses; 3, focusing the focuses on parts in a substrate of the LED device at different depths; 4, transversely and longitudinally moving the horizontal mobile platform, and performing femtosecond laser scribing; and 5, shredding the LED device to obtain a single LED device. By the multi-focus femtosecond laser scribing method, a sapphire substrate can be cut by different light beams simultaneously, and effects that the substrate is cut at one time, and a plurality of scratches are caused are achieved, so that a relatively thick sapphire substrate is cut in a mode that low damage is caused, and the LED device is separated.
Description
Technical field
The invention belongs to technical field of semiconductors, refer to especially gallium nitride based light emitting diode wafer laser scribing technical field.
Background technology
Laserscribing is widely used in the device isolation technique of gallium nitride based light emitting diode wafer, has the characteristics such as simple, quick, efficient.Now common nanosecond laser scribing machine can only stay the cutting vestige that the degree of depth is 20 μ m to 50 μ m in Sapphire Substrate when the cutting sapphire substrate carries out device isolation.So so that the Sapphire Substrate of 460 μ m left and right thicknesses needs mechanical reduction, the thickness that is polished to 70-120 μ m could be drawn and split, to reach the purpose of device isolation.But, mechanical reduction and the polishing sapphire meeting so that epitaxial layer of gallium nitride is subject to destruction to a certain degree, thereby reduced the luminous efficiency of light emitting diode.Simultaneously, mechanical reduction and polishing Sapphire Substrate meeting be so that the complicated process of preparation of light emitting diode, thereby improved the production cost of device.And because nanosecond laser pulses is longer, it focuses on the high temperature meeting that produces on the Sapphire Substrate so that near the sapphire the laser scratch undergoes phase transition, so that near the light transmission rate the laser scratch reduces, this has also affected the light extraction efficiency of device.On the other hand, for cost consideration, the epitaxial wafer of gallium nitride based light emitting diode carries out industrial upgrading to the direction of the large scale extensions such as 4 inches, 6 inches even 8 inches and since gallium nitride material with the caused huge stress of Sapphire Substrate lattice mismatch so that the very difficult thickness that is thinned to again about 100 μ m of Sapphire Substrate.So just need a kind of novel laser cutting mode to carry out large scale, low damage, high efficiency laserscribing.
Summary of the invention
The object of the invention is to, a kind of multifocal some femtosecond laser dicing method of the LED of being applied to device isolation is provided, it is to utilize the femto-second laser of ultrashort pulse thicker Sapphire Substrate more than the 200 μ m to be hanged down the laser cutting of damaging.Simultaneously femto-second laser emitting laser light path is designed, in light path, introduce a multifocal some light adjusting system, so that laser is dispersed into different light beams through behind this multifocal some light adjusting system, and focus on the different degree of depth of sapphire contrast, to reach simultaneously cutting sapphire substrate of different light beams, realize the once effect of cutting, many places cut, thereby realize the low damage cutting to thicker Sapphire Substrate, to reach the device isolation of light emitting diode.The introducing of multifocal some light adjusting system only needs once just can finish the cutting to thicker Sapphire Substrate, thereby has reduced production cost.Because the laser pulse of femto-second laser is very short, so that the sapphire direct boiling is decomposed, has reduced laser beam to sapphire destruction, and improved light extraction efficiency simultaneously.
The invention provides a kind of multifocal some femtosecond laser dicing method of the LED of being applied to device isolation, comprising:
Step 1: the LED device for preparing is fixed on the horizontal shifting platform, and is positioned at the imaging center of CCD imaging device;
Step 2: the laser optical path at femto-second laser is placed a plurality of lens, and laser is divided into a plurality of focuses;
Step 3: the position that a plurality of focuses is focused on the inner different depth of LED device substrate;
Step 4: horizontal and vertical mobile and horizontal mobile platform, finish the femtosecond laser scribing;
Step 5: the LED device is carried out sliver, obtain single led device.
The laser center wavelength scope of wherein said femto-second laser output is 200nm-1600nm, and pulse width range is 1fs-1000fs, and repetition rate is 1MHz-1000MHz, and average-power-range is 1mw-100W.
The quantity of wherein said lens and focus is 1-10.
Wherein these a plurality of focuses are evenly distributed on the position of substrate interior different depth.
Wherein said focus diameter is 100nm-5 μ m.
Description of drawings
For making the auditor can further understand structure of the present invention, feature and purpose thereof, below in conjunction with being described in detail as follows of accompanying drawing and preferred embodiment, wherein:
Fig. 1 is the flow chart that the present invention is applied to multifocal some femtosecond laser dicing method of LED device isolation;
Fig. 2 is multifocal some femto-second laser incision principle of the present invention schematic diagram;
Fig. 3 is the focusing structure schematic diagram of multifocal some femto-second laser.
The specific embodiment
Please refer to Fig. 1 to shown in Figure 3, the invention provides a kind of multifocal some femtosecond laser dicing method of the LED of being applied to device isolation, comprising:
Step S10: the LED device 400 for preparing is fixed on the horizontal shifting platform 500, then adjusts the CCD focus of light path system, make LED device 400 back sides be positioned at the imaging center (consulting Fig. 2) of CCD imaging device 200; It is parallel with the runway of LED device 400 to adjust horizontal shifting platform 500.
Step S20: the laser optical path at femto-second laser 100 is placed a plurality of lens 300, laser is divided into a plurality of focuses, the laser center wavelength scope of described femto-second laser 100 outputs is 200nm-1600nm, pulse width range is 1fs-1000fs, repetition rate is 1MHz-1000MHz, average-power-range is 1mw-100W, the quantity of described lens 300 and focus is that (lens 300 quantity that present embodiment provides are two to 1-10, lens 301 and lens 302), these a plurality of focuses are evenly distributed on the position of substrate interior different depth, and described focus diameter is 100nm-5 μ m;
Step S30: the position that a plurality of focuses 401 and focus 402 (consult Fig. 3, present embodiment provides two focuses 401,402) is focused on LED device 400 substrate interior different depths by the position of adjusting lens 300; Make the laser energy at a plurality of focuses place even.
Step S40: after adjustment is finished, open the laser instrument switch, with the 500 horizontal and vertical movements of step motor control horizontal shifting platform, finish the femtosecond laser scribing process of LED device 400;
Step S50: after scribing is finished, with after the LED device 400 usefulness diaphragms protections, be placed on the sliver board, the X that adjusts the sliver board and Y-axis with carry out sliver after the runway of LED device 400 is parallel, obtain single led device.Thereby finish the scribing sliver technique of LED device 400.
The above; only be the specific embodiment among the present invention, but protection scope of the present invention is not limited to this, anyly is familiar with the people of this technology in the disclosed technical scope of the present invention; the conversion that can expect easily or replacement all should be encompassed in of the present invention comprising within the scope.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claims.
Claims (5)
1. multifocal some femtosecond laser dicing method that is applied to the LED device isolation comprises:
Step 1: the LED device for preparing is fixed on the horizontal shifting platform, and is positioned at the imaging center of CCD imaging device;
Step 2: the laser optical path at femto-second laser is placed a plurality of lens, and laser is divided into a plurality of focuses;
Step 3: the position that a plurality of focuses is focused on the inner different depth of LED device substrate;
Step 4: horizontal and vertical mobile and horizontal mobile platform, finish the femtosecond laser scribing;
Step 5: the LED device is carried out sliver, obtain single led device.
2. be applied to as described in claim 1 multifocal some femtosecond laser dicing method of LED device isolation, the laser center wavelength scope of wherein said femto-second laser output is 200nm-1600nm, pulse width range is 1fs-1000fs, repetition rate is 1MHz-1000MHz, and average-power-range is 1mw-100W.
3. be applied to as described in claim 1 multifocal some femtosecond laser dicing method of LED device isolation, the quantity of wherein said lens and focus is 1-10.
4. be applied to as described in claim 1 multifocal some femtosecond laser dicing method of LED device isolation, wherein these a plurality of focuses are evenly distributed on the position of substrate interior different depth.
5. be applied to as described in claim 1 multifocal some femtosecond laser dicing method of LED device isolation, wherein said focus diameter is 100nm-5 μ m.
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104275555A (en) * | 2013-07-05 | 2015-01-14 | 三星显示有限公司 | Substrate separation device, and substrate separation method using substrate separation device |
| CN104319336A (en) * | 2014-10-29 | 2015-01-28 | 山东浪潮华光光电子股份有限公司 | Method for forming inverted-pyramid-shaped blue LED flip chip |
| CN106271111A (en) * | 2016-09-26 | 2017-01-04 | 华中科技大学 | A kind of multifocal separation by laser laminated glass method and device |
| CN106392337A (en) * | 2016-09-26 | 2017-02-15 | 华中科技大学 | Method and device for correlative multi-focus laser separation of fragile transmission material |
| CN106624373A (en) * | 2015-10-30 | 2017-05-10 | 三星显示有限公司 | Laser cutting apparatus |
| CN106695113A (en) * | 2016-12-08 | 2017-05-24 | 华中科技大学 | Axial bifocus lens |
| CN107243690A (en) * | 2017-07-13 | 2017-10-13 | 华中科技大学 | A kind of laser multifocal dynamic machining method and system |
| CN107861249A (en) * | 2017-11-09 | 2018-03-30 | 武汉茂捷光电科技有限公司 | A kind of method that laser realizes Diode laser by lens group |
| CN107863423A (en) * | 2017-10-26 | 2018-03-30 | 江苏新广联半导体有限公司 | The patterned preparation method of LED flip chip sapphire exiting surface |
| CN109128530A (en) * | 2018-09-27 | 2019-01-04 | 广东工业大学 | A kind of multifocal laser micropore processing method of dynamic adjustment |
| CN110510887A (en) * | 2019-08-21 | 2019-11-29 | 吉林大学 | The manufacturing method and Optical devices of multiple focus optical curved surface |
| CN112192772A (en) * | 2020-10-26 | 2021-01-08 | 中国科学院半导体研究所 | Ultrafast laser continuous splitting device and method |
| CN112427812A (en) * | 2020-09-22 | 2021-03-02 | 厦门云天半导体科技有限公司 | Method for realizing separation of ultrathin workpieces through spacing ultrafine laser through holes |
| CN112620930A (en) * | 2020-12-29 | 2021-04-09 | 苏州科韵激光科技有限公司 | Semiconductor laser processing multi-focus optical path system, laser system and processing method |
| CN116748703A (en) * | 2023-08-15 | 2023-09-15 | 蓝思科技股份有限公司 | Method and system for processing matte substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104275555A (en) * | 2013-07-05 | 2015-01-14 | 三星显示有限公司 | Substrate separation device, and substrate separation method using substrate separation device |
| CN104275555B (en) * | 2013-07-05 | 2018-02-02 | 三星显示有限公司 | Substrate separator and the substrate separation method using substrate separator |
| CN104319336B (en) * | 2014-10-29 | 2017-02-15 | 山东浪潮华光光电子股份有限公司 | Method for forming inverted-pyramid-shaped blue LED flip chip |
| CN104319336A (en) * | 2014-10-29 | 2015-01-28 | 山东浪潮华光光电子股份有限公司 | Method for forming inverted-pyramid-shaped blue LED flip chip |
| CN106624373A (en) * | 2015-10-30 | 2017-05-10 | 三星显示有限公司 | Laser cutting apparatus |
| CN106392337B (en) * | 2016-09-26 | 2018-04-24 | 华中科技大学 | A kind of correlation multifocal separation by laser brittleness transmission material method and device |
| CN106271111A (en) * | 2016-09-26 | 2017-01-04 | 华中科技大学 | A kind of multifocal separation by laser laminated glass method and device |
| CN106392337A (en) * | 2016-09-26 | 2017-02-15 | 华中科技大学 | Method and device for correlative multi-focus laser separation of fragile transmission material |
| CN106695113A (en) * | 2016-12-08 | 2017-05-24 | 华中科技大学 | Axial bifocus lens |
| CN106695113B (en) * | 2016-12-08 | 2018-11-06 | 华中科技大学 | A kind of axial bifocus camera lens |
| CN107243690A (en) * | 2017-07-13 | 2017-10-13 | 华中科技大学 | A kind of laser multifocal dynamic machining method and system |
| CN107863423A (en) * | 2017-10-26 | 2018-03-30 | 江苏新广联半导体有限公司 | The patterned preparation method of LED flip chip sapphire exiting surface |
| CN107861249A (en) * | 2017-11-09 | 2018-03-30 | 武汉茂捷光电科技有限公司 | A kind of method that laser realizes Diode laser by lens group |
| CN109128530A (en) * | 2018-09-27 | 2019-01-04 | 广东工业大学 | A kind of multifocal laser micropore processing method of dynamic adjustment |
| CN110510887A (en) * | 2019-08-21 | 2019-11-29 | 吉林大学 | The manufacturing method and Optical devices of multiple focus optical curved surface |
| CN112427812A (en) * | 2020-09-22 | 2021-03-02 | 厦门云天半导体科技有限公司 | Method for realizing separation of ultrathin workpieces through spacing ultrafine laser through holes |
| CN112192772A (en) * | 2020-10-26 | 2021-01-08 | 中国科学院半导体研究所 | Ultrafast laser continuous splitting device and method |
| CN112620930A (en) * | 2020-12-29 | 2021-04-09 | 苏州科韵激光科技有限公司 | Semiconductor laser processing multi-focus optical path system, laser system and processing method |
| CN116748703A (en) * | 2023-08-15 | 2023-09-15 | 蓝思科技股份有限公司 | Method and system for processing matte substrate |
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