CN101882578A - Integral solid laser lift-off and cutting equipment - Google Patents
Integral solid laser lift-off and cutting equipment Download PDFInfo
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- CN101882578A CN101882578A CN2009101364589A CN200910136458A CN101882578A CN 101882578 A CN101882578 A CN 101882578A CN 2009101364589 A CN2009101364589 A CN 2009101364589A CN 200910136458 A CN200910136458 A CN 200910136458A CN 101882578 A CN101882578 A CN 101882578A
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Abstract
The invention provides novel integral equipment which has both a solid laser lift-off function and a laser cutting function. The equipment comprises a solid laser, a light beam shaping lens, a beam expanding lens, a galvanometric motor, a galvanometric lens, a field lens, a machine vision system, a mobile platform, an industrial control computer and control software. In the equipment, the solid laser is used as a laser source; the light beam shaping lens, the beam expanding lens, the galvanometric lens, the galvanometric motor and the field lens are arranged below the laser; the light beam shaping lens is positioned behind the laser and used for shaping a laser beam emitted by the laser into a light beam shape required by the invention; and the galvanometric motor is positioned in front of the field lens and used for controlling the action of the galvanometric lens according to an instruction sent out by the control software so as to realize the motion control of the light beam and complete different scanning paths. The invention has the double functions of the damage-free lifting-off of a GaN and sapphire substrate and the cutting of a lifted-off chip.
Description
Technical field
The present invention relates to field of semiconductor processing, more specifically to the integration apparatus of peeling off and cutting that adopts Solid State Laser to semiconductor film material.Equipment of the present invention has laser lift-off semi-conducting material and scribing (cutting) function simultaneously.Laser becomes specific shape and specific optical field distribution by the light path integer of special use, shines on the interface between the multilayer material by focusing, decomposes boundary material to reach the function of peeling off rete and substrate.Simultaneously, because what use is great-power solid laser, so, may use another light beam integer system simultaneously, produce a branch of laser that can be used for scribing (cutting), under the cooperation of mobile platform and Vision Builder for Automated Inspection, can have scribing (cutting) function of semi-conducting material simultaneously like this, a multi-functional laser micro-machining system is provided.
Background technology
With GaN and InGaN, AlGaN is that main III/V nitride is the semi-conducting material that receives much concern in recent years, the direct band gap of its 1.9eV-6.2eV continuous variable, excellent physics, chemical stability, high saturated electrons mobility or the like characteristic makes it become the preferred material of laser, light-emitting diode or the like opto-electronic device and microelectronic component.
Yet because the restriction of the growing technology of GaN own, large tracts of land GaN material now is grown on the Sapphire Substrate mostly.Though Grown GaN is of high quality on the Sapphire Substrate, use also the widest, because sapphire non-conductive and relatively poor thermal conduction characteristic has greatly limited the development of GaN based semiconductor device.In order to avoid this deficiency, the GaN film has been invented the method that sapphire is removed after growing successfully on the sapphire, removes GaN film behind the substrate and can be bonded in better heat sink according to need or as the backing material of homoepitaxy.In the process that sapphire is removed, the main method of using is exactly a laser lift-off technique.
Substrate desquamation technology (Lift-off) is realized on AlGaInP/GaAs LED by hewlette-packard that at first absorption loss water is very big because the GaAs substrate makes the LED interior lights.By peeling off the GaAs substrate, be bonded in then on the transparent GaP substrate, can improve nearly 2 times luminous efficiency.The laser lift-off of GaN sill (LLO) technology is based on a technology of the heteroepitaxy development of GaN, be that people such as U.S. M.K.Kelly proposed in 1996, utilize 3 double-frequency lasers of YAG to peel off the thick film GaN of hydride gas-phase epitaxy on Sapphire Substrate (HVPE) growth.People such as W.S.Wong utilized the LLO technology to prepare the LED and the laser diode of GaN base in 1998, and laser lift-off has been subjected to people's extensive attention.
What laser lift-off technique had solved that GaN base LED exists on the Sapphire Substrate assembles and a series of problems such as light extraction efficiency is low such as heat radiation, electric current, is to solve the most potential technology that obstacle is used in above-mentioned illumination.At first, epitaxial wafer is transferred on high heat conductance heat sink, has greatly improved the radiating efficiency of led chip, reduces the junction temperature of LED, and the reduction of junction temperature will improve luminous efficiency and the reliability of LED greatly, increases the life-span of LED.Laser lift-off technique is owing to reduce technologies such as etching, abrasive disc, scribing, and the Sapphire Substrate of peeling off out can repeat utilization, saves the technology cost effectively.
Present business-like laser lift-off equipment mainly contains the U.S. IX-1000 of JPSA company type laser lift-off machine, what adopt is high-power KrF excimer laser, wavelength is 248nm, pulse duration does not wait at 25-38ns, after the homogenize that the accurate control of energy and beam energy are distributed, shine on the GaN resilient coating, make it to be decomposed into gallium and nitrogen, thereby realize peeling off of GaN rete and substrate.Except the KrF excimer laser, the YAG frequency tripling solid laser device of Q switching also is employed, and mainly contains U.S. M.K.Kelly group and Taiwan R.H.Horng group.Solid state laser can reach higher pulse energy by the Q switching technology, and safeguard more convenient, but because technical limitations, the commodity equipment that this scheme is never ripe.
The laser cutting device of present business-like chip, all comparative maturity.There are the DISCO of Japan, Tokyo precision etc. in the supplier of international mainstream.These producers have all released successful DPSS laser cutting device.
Above-mentioned peeling off with cutting method has following characteristics:
1. use stripping technology (chip by chip) piecewise, peel off by large spot (hot spot is more than or equal to an element (chip)).
2. spot size will change according to the size of device cell.
3. the Energy distribution of hot spot is even, is the flat-top shape.
4. light spot energy is big, and general energy density is greater than 0.6J/cm2.
5. use travelling table to add visual identifying system and finish each device cell and aligning laser facula.
6. use the light source of DPSS laser as laser cutting machine.
Now in the lift-off technology, adopt laser to adopt the KrF excimer laser, this laser is because pulse frequency is lower, so,, do not adopt the mode of laser cutting for the chip cutting after peeling off, but according to heat sink difference, the cutting of employing diamond blade, the use DPSS laser scribing that has uses the mode of mechanical sliver then, and this dual mode can solve the problem that chip separates.
Application through industrial circle recent years though above-mentioned solution has solved the problem of peeling off, has also solved the problem the laser cutting core under, and some problems have also appearred in the while, mainly contain following some:
1.KrF the characteristics of laser can't guarantee the energy stability of each laser pulse to occur energy hunting easily, thereby destroy component structure, reduce yields.
2. owing to will regulate spot size, thereby cause the adjustment difficulty of laser lift-off parameter, thereby can't guarantee to peel off the consistency of effect with the change of components and parts specification.
3. because hot spot is bigger, in use industrial circle is being queried this large-area stripping means always in recent years, because GaN decomposes simultaneously in the irradiated region, causes stress very big in the resolver and distortion, thereby causes a hidden trouble for the quality and the life-span of chip.Though it is accurate as far as possible GaN to be decomposed by artificial adjustment, the adjustment on this macroscopic view is difficult to adapt to the requirement of microcosmic.Simultaneously because the discreteness of KrF excimer laser pulse energy makes the adjustment of this laser difficult more.
4. in the scribing cutting process after peeling off, concerning the user, repurchase a scribing machine.For through the backing material behind the attenuate (being approximately below the 80um), use the mode technical difficulty of cutting of diamond blade very big.And the mode of use laser scribing will additionally drop into an expensive laser scribing means (close prices laser lift-off machine).
Summary of the invention
The object of the present invention is to provide a kind of more reliable, the easy laser lift-off cheaply and the integration apparatus of laser cutting.The microcell that the present invention has adopted the inventor to propose is peeled off (MicroAreaLLO) technology, need not the blind laser-stripping method of sweeping of pinpoint high speed, has realized the nondestructively peeling of GaN and Sapphire Substrate.Adopt same light source simultaneously, produce the required light beam of cutting, make the material breakdown cutting thereby focus on material surface through field lens through different light paths.
The invention provides a kind of solid laser lift and cutting integration apparatus, it is characterized in that comprising solid state laser, the beam shaping mirror, beam expanding lens, galvanometer motor, the galvanometer eyeglass, field lens and Vision Builder for Automated Inspection, also comprise mobile platform and industrial PC and Control Software, described beam shaping mirror is positioned at described solid state laser below, described beam expanding lens, galvanometer eyeglass, galvanometer motor and field lens, the beam shaping mirror is positioned at after the described solid state laser, the laser beam reshaping that described solid state laser is sent, described galvanometer motor is positioned at before the field lens, the action of the described galvanometer eyeglass of commands for controlling that sends according to Control Software, thus realize different scanning patterns and cutting path, described mobile platform is positioned at described solid state laser below, and described Control Software runs on the described industrial PC.
In solid laser lift of the present invention and cutting integration apparatus, described beam shaping mirror is shaped as laser facula the small light spot of different geometries.
In solid laser lift of the present invention and cutting integration apparatus, described geometry comprises square, rectangle, circle, ellipse, pentagon and hexagon.
In solid laser lift of the present invention and cutting integration apparatus, the small light spot girth is the square hot spot of 3-1000 micron.
In solid laser lift of the present invention and cutting integration apparatus, small light spot is the circular light spot of diameter 3-300 micron.
Solid laser lift of the present invention and the cutting integration apparatus in, the small light spot central energy is the strongest, to around energy die down gradually.
In solid laser lift of the present invention and cutting integration apparatus, described Vision Builder for Automated Inspection comprises imaging lens, CCD, video frequency collection card, travelling table.
In solid laser lift of the present invention and cutting integration apparatus, has the function of peeling off and cutting simultaneously.
In solid laser lift of the present invention and cutting integration apparatus, described beam expander mirror and described beam shaping mirror are worked simultaneously.
In solid laser lift of the present invention and cutting integration apparatus, described beam expander mirror and described beam shaping mirror time-sharing work.
In solid laser lift of the present invention and cutting integration apparatus, described laser is used to peel off and cut simultaneously.
In solid laser lift of the present invention and cutting integration apparatus, employed laser is the DPSS solid state laser of wavelength less than 400nm.
Description of drawings
The present invention will be described in conjunction with the accompanying drawings.In the accompanying drawing:
Fig. 1 is the schematic diagram of solid laser lift of the present invention and cutting equipment;
Fig. 2 is a beam shaping schematic diagram of the present invention;
Fig. 3 a is the pulse hot spot energy profile of prior art, and Fig. 3 b is a pulse hot spot energy profile of the present invention;
Fig. 4-Fig. 8 is the scanning pattern schematic diagram;
Fig. 9 is the micrograph behind the harmless laser lift-off of small light spot of the present invention.
Embodiment
Fig. 1 is the schematic diagram of solid laser lift of the present invention and cutting equipment, comprising solid state laser, and the beam shaping mirror, beam expanding lens, galvanometer motor, galvanometer eyeglass, Vision Builder for Automated Inspection and field lens also comprise mobile platform and industrial PC and Control Software (not shown).The present invention is LASER Light Source with the solid state laser, and the laser below is the beam shaping mirror, beam expanding lens, and the galvanometer eyeglass, galvanometer motor and field lens, the beam shaping mirror is positioned at after the laser, and the laser beam reshaping that laser is sent is a beam shape required for the present invention.Galvanometer motor is positioned at before the field lens, the action of the commands for controlling galvanometer eyeglass that sends according to Control Software, thus realize the random motion of light beam, different scanning patterns.
According to a kind of laser lift-off GaN of the present invention and Sapphire Substrate peel-off device and stripping means, be to be LASER Light Source with the solid state laser, using girth is 3～1000 microns, and two angular distance or longest diameter are no more than 400 microns small light spot and carry out pointwise laser scanning line by line farthest, wherein the Energy distribution situation of small light spot inside is: the spot center energy is the strongest, to around energy die down gradually.
The present invention changes the large spot lift-off technology in original laser lift-off, uses small light spot to realize need not pinpoint blind peeling GaN film or the GaN base device swept.The small light spot method is not suggested 3 very important reasons always: (1) generally believes that small light spot is peeled off and will introduce inside, GaN base device unit to the hot spot edge problem, thereby reduce the quality of laser lift-off more; (2) generally believe that the single pulse energy of solid state laser possibly can't reach the threshold values of laser lift-off; (3) the Shang Weiyou report can be realized the harmless laser lift-off of small light spot.In the present invention, changed the energy distribution state of hot spot inside, considered the gradual change of hot spot edge energy, Energy distribution is shown in Fig. 3 b.Improved the force-bearing situation of GaN sill, thereby realized the harmless laser lift-off of small light spot at the hot spot edge.
Solid state laser used in the present invention can be improved solid double-frequency laser light source, its improvement has been to improve the laser energy space of hot spot inside and has announced, with the spot center is the energy peak, to around energy die down gradually, whole hot spot internal energy is Gaussian Profile or approximate Gaussian distribution.Shown in Fig. 3 b.
The present invention has realized that small light spot can't harm laser lift-off (stripper surface does not obviously damage as shown in Figure 9), thereby has realized need not accurately to mate the blind stripping means of sweeping of hot spot and chip position.The present invention has improved the laser lift-off scan mode, after the step of traditional handicraft realization plating or bonding, need not again according to GaN device cell adjusted size facula area, need not when beginning, to carry out hot spot and accurately locate work, can directly carry out laser scanning, the centre need not to pause, and need not real-time detection.
The present invention has designed a kind of beam shaping system, changed the spatial distribution of light beam, make it more to help the interior Energy distribution of hot spot, require Energy distribution to be the requirement that the flat-top shape distributes fully before having changed in original light path, make the class Gaussian Profile into, waist helps the unlikely destruction backing material of linking between the hot spot like this less than the base width, and light path principle as shown in Figure 2.
Optical beam scanning system adopts the similar scanning system of laser marking, this system did not also use at present used stripping system, so may being this mode, reason do not form product in positioning accuracy timing existing problems, but, make this problem be resolved because our microcell is peeled off (MALLO) technology.Light path principle as shown in Figure 1.
Because blind successful solution of sweeping scheme, the inventor peels off the problem of existence according to existing again, has proposed some distinctive scannings and has peeled off scheme, with the persistently overheating problem in stripping area of disperseing to cause owing to laser pulse.Drip and nitrogen bubble owing in peeling off, form gallium between rete and the substrate, so, different scanning patterns, also have different stress distribution, therefore, the diversified scanning pattern that the inventor proposes has solved the stress problem of material in peeling off of different structure.Improved yields simultaneously.
Fig. 4-Fig. 8 shows several exemplary scanning of the present invention path.
The present invention adopts unique scanning road warp, helical scanning from inside to outside for example, helical scanning from outside to inside, heart circular scanning path from inside to outside, concentric circular scans path from outside to inside, the scanning pattern of alternatively up and down, its advantage are to take different scanning strategies according to part characteristic and GaN film characteristics.
Chip cutting after peeling off, the present invention has adopted another set of beam expander system (parallel with the orthopedic systems of peeling off), the motion mode that has used vibration mirror scanning to combine with precision stage.Be aided with Vision Builder for Automated Inspection simultaneously,, realize the function of chip cutting through the control of special-purpose software.All technology of this part all have very ripe application system.Characteristics of the present invention utilize the inventor to solve the technology of MALLO, use the characteristics of DPSS laser simultaneously, Promethean will peel off with cutting function close two for, the utility system of a high performance-price ratio is provided for the user.
Compared with prior art, the invention has the beneficial effects as follows: the first, greatly simplified the laser lift-off process; The second, greatly improved the operating efficiency of laser lift-off; The 3rd, reduced percent defective; The 4th, peel off cutting one concept and design, fully used the performance of DPSS laser instrument, an equipment can the timesharing use become two equipment, and higher cost performance is arranged.
Claims (12)
1. solid laser lift and cutting integration apparatus, it is characterized in that comprising solid state laser, the beam shaping mirror, beam expanding lens, galvanometer motor, the galvanometer eyeglass, field lens and Vision Builder for Automated Inspection, also comprise mobile platform and industrial PC and Control Software, described beam shaping mirror is positioned at described solid state laser below, described beam expanding lens, galvanometer eyeglass, galvanometer motor and field lens, the beam shaping mirror is positioned at after the described solid state laser, the laser beam reshaping that described solid state laser is sent, described galvanometer motor is positioned at before the field lens, the action of the described galvanometer eyeglass of commands for controlling that sends according to Control Software, thus realize different scanning patterns and cutting path, described mobile platform is positioned at described solid state laser below, and described Control Software runs on the described industrial PC.
2. solid laser lift as claimed in claim 1 and cutting integration apparatus is characterized in that described beam shaping mirror is shaped as laser facula the small light spot of different geometries.
3. solid laser lift as claimed in claim 2 and cutting integration apparatus is characterized in that described geometry comprises square, rectangle, circle, ellipse, pentagon and hexagon.
4. solid laser lift as claimed in claim 2 and cutting integration apparatus is characterized in that the small light spot girth is the square hot spot of 3-1000 micron.
5. solid laser lift as claimed in claim 2 and cutting integration apparatus is characterized in that small light spot is the circular light spot of diameter 3-300 micron.
6. solid laser lift as claimed in claim 2 and the cutting integration apparatus, it is characterized in that the small light spot central energy is the strongest, to around energy die down gradually.
7. solid laser lift as claimed in claim 1 and cutting integration apparatus is characterized in that described Vision Builder for Automated Inspection comprises imaging lens, CCD, video frequency collection card, travelling table.
8. solid laser lift as claimed in claim 1 and cutting integration apparatus is characterized in that having the function of peeling off and cutting simultaneously.
9. solid laser lift as claimed in claim 1 and cutting integration apparatus is characterized in that described beam expander mirror and described beam shaping mirror work simultaneously.
10. solid laser lift as claimed in claim 1 and cutting integration apparatus is characterized in that described beam expander mirror and described beam shaping mirror time-sharing work.
11. solid laser lift as claimed in claim 1 and cutting integration apparatus is characterized in that described laser is used to peel off and cut simultaneously.
12. solid laser lift as claimed in claim 1 and cutting integration apparatus is characterized in that employed laser is the DPSS solid state laser of wavelength less than 400nm.
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