CN101882578B - Integral solid laser lift-off and cutting equipment - Google Patents
Integral solid laser lift-off and cutting equipment Download PDFInfo
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- CN101882578B CN101882578B CN200910136458.9A CN200910136458A CN101882578B CN 101882578 B CN101882578 B CN 101882578B CN 200910136458 A CN200910136458 A CN 200910136458A CN 101882578 B CN101882578 B CN 101882578B
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Abstract
The invention provides novel integral equipment which has both a solid laser lift-off function and a laser cutting function. The equipment comprises a solid laser, a light beam shaping lens, a beam expanding lens, a galvanometric motor, a galvanometric lens, a field lens, a machine vision system, a mobile platform, an industrial control computer and control software. In the equipment, the solid laser is used as a laser source; the light beam shaping lens, the beam expanding lens, the galvanometric lens, the galvanometric motor and the field lens are arranged below the laser; the light beam shaping lens is positioned behind the laser and used for shaping a laser beam emitted by the laser into a light beam shape required by the invention; and the galvanometric motor is positioned in front of the field lens and used for controlling the action of the galvanometric lens according to an instruction sent out by the control software so as to realize the motion control of the light beam and complete different scanning paths. The invention has the double functions of the damage-free lifting-off of a GaN and sapphire substrate and the cutting of a lifted-off chip.
Description
Technical field
The present invention relates to field of semiconductor processing, more specifically to the integration apparatus of peeling off and cutting that adopts Solid State Laser to semiconductor film material.Equipment of the present invention has laser lift-off semi-conducting material and scribing (cutting) function simultaneously.Laser becomes specific shape and specific optical field distribution by special-purpose light path integer, by focusing, is irradiated on the interface between multilayer material, decomposes boundary material to reach the function of peeling off rete and substrate.Simultaneously, due to what use, it is great-power solid laser, so, may use another light beam shaping system simultaneously, produce a branch of energy for the laser of scribing (cutting), under the cooperation of mobile platform and Vision Builder for Automated Inspection, can there is scribing (cutting) function of semi-conducting material simultaneously like this, a multi-functional laser micro-machining system is provided.
Background technology
With GaN and InGaN, AlGaN is that main III/V nitride is the semi-conducting material receiving much concern in recent years, the direct band gap of its 1.9eV-6.2eV continuous variable, excellent physics, chemical stability, high saturated electrons mobility etc. characteristic, becomes the preferred material of laser, light-emitting diode etc. opto-electronic device and microelectronic component.
Yet due to the restriction of the growing technology of GaN own, large area GaN material is now grown in Sapphire Substrate mostly.Although the GaN of Grown on Sapphire Substrates is of high quality, apply also the extensivelyst, due to sapphire non-conductive and poor thermal conduction characteristic, greatly limited the development of GaN based semiconductor device.In order to avoid this deficiency, after GaN film is grown successfully on sapphire, the method that sapphire is removed has been invented, and removes GaN film after substrate and can be bonded according to need better heat sink or as the backing material of homoepitaxy.In the process of removing at sapphire, the method for main application is exactly laser lift-off technique.
Substrate desquamation technology (Lift-off) is first realized on AlGaInP/GaAs LED by hewlette-packard, because GaAs substrate makes LED interior lights, absorption loss water is very large.By peeling off GaAs substrate, be then bonded on transparent GaP substrate, can improve the luminous efficiency of nearly 2 times.The laser lift-off of GaN sill (LLO) technology is a technology of the heteroepitaxy development based on GaN, be that the people such as U.S. M.K.Kelly proposed in 1996, utilize 3 double-frequency lasers of YAG to peel off the thick film GaN of hydride gas-phase epitaxy in Sapphire Substrate (HVPE) growth.The people such as W.S.Wong in 1998 utilize LLO technology to prepare LED and the laser diode of GaN base, and laser lift-off has been subject to people's extensive attention.
What laser lift-off technique had solved in Sapphire Substrate that GaN base LED exists assembles and the series of problems such as light extraction efficiency is low such as heat radiation, electric current, is the most potential technology that solves above-mentioned illumination application obstacle.First, epitaxial wafer is transferred to the heat sink upper of high heat conductance, has greatly improved the radiating efficiency of LED chip, reduces the junction temperature of LED, and the reduction of junction temperature will improve luminous efficiency and the reliability of LED greatly, increases the life-span of LED.Laser lift-off technique is owing to reducing the techniques such as etching, abrasive disc, scribing, and the Sapphire Substrate of peeling off out can repeat to use, and effectively saves process costs.
Current business-like laser lift-off equipment mainly contains the U.S. IX-1000 of JPSA company type laser lift-off machine, what adopt is high-power KrF excimer laser, wavelength is 248nm, pulse duration is not at 25-38ns etc., after the homogenize that the accurate control of energy and beam energy are distributed, be irradiated on GaN resilient coating, make it to be decomposed into gallium and nitrogen, thereby realize peeling off of GaN rete and substrate.Except KrF excimer laser, the YAG frequency tripling solid laser device of Q switching is also employed, and mainly contains U.S. M.K.Kelly group and Taiwan R.H.Horng group.Solid state laser can reach higher pulse energy by Q switching technology, and safeguards more conveniently, but due to technical limitations, this scheme never has ripe commodity equipment.
The laser cutting device of current business-like chip, all comparative maturity.There is Japanese DISCO in the supplier of international mainstream, Tokyo precision etc.These producers have all released successful DPSS laser cutting device.
Above-mentioned peeling off with cutting method has following feature:
1. use stripping technology (chip by chip) piecewise, by large spot (hot spot is more than or equal to an element (chip)), peel off.
2. spot size will change according to the size of device cell.
3. the Energy distribution of hot spot is even, is flat-top shape.
4. light spot energy is large, and general energy density is greater than 0.6J/cm2.
5. use travelling table to add visual identifying system and complete each device cell and aligning laser facula.
6. use DPSS laser as the light source of laser cutting machine.
Now in lift-off technology, adopt laser to adopt KrF excimer laser, this laser is because pulse frequency is lower, so, for the chip cutting after peeling off, do not adopt the mode of laser cutting, but according to heat sink difference, the cutting of employing diamond blade, then some use DPSS laser scribings are used the mode of mechanical sliver, and these two kinds of modes can solve the problem of chip separation.
Application through industrial circle recent years, although above-mentioned solution has solved the problem of peeling off, has also solved the problem under laser cutting core, has also occurred some problems simultaneously, mainly contain following some:
The feature of 1.KrF laser, cannot guarantee the energy stability of each laser pulse easily to occur energy hunting, thereby destroys component structure, reduces yields.
2. owing to regulating spot size with the change of components and parts specification, thereby cause the adjustment difficulty of laser lift-off parameter, thereby cannot guarantee to peel off the consistency of effect.
3. because hot spot is larger, in use industrial circle is being queried this large-area stripping means always in recent years, because GaN in irradiated region decomposes simultaneously, causes stress very large in resolver and distortion, thereby causes a hidden trouble to quality and the life-span of chip.Although it is accurate as far as possible GaN to be decomposed by artificial adjustment, the adjustment in this macroscopic view is difficult to adapt to the requirement of microcosmic.Due to the discreteness of KrF excimer laser pulse energy, make the adjustment of this laser more difficult simultaneously.
4., in the scribing cutting process after peeling off, concerning user, repurchase a scribing machine.For the backing material after attenuate (being approximately below 80um), the mode technical difficulty of the cutting of use diamond blade is very large.And the mode of use laser scribing will additionally drop into an expensive laser scribing means (close prices laser lift-off machine).
Summary of the invention
The object of the present invention is to provide a kind of more reliable, easy laser lift-off cheaply and the integration apparatus of laser cutting.The microcell that the present invention has adopted inventor to propose is peeled off (MicroAreaLLO) technology, without the blind laser-stripping method of sweeping of pinpoint high speed, has realized the nondestructively peeling of GaN and Sapphire Substrate.Adopt same light source simultaneously, through different light paths, produce the required light beam of cutting, thereby focus on material surface through field lens, make material breakdown cutting.
The invention provides a kind of solid laser lift and cutting integration apparatus, it is characterized in that comprising solid state laser, beam shaping mirror, beam expanding lens, galvanometer motor, galvanometer eyeglass, field lens and Vision Builder for Automated Inspection, also comprise mobile platform and industrial PC and control software, described beam shaping mirror and described beam expanding lens are positioned at described solid state laser below concurrently, described galvanometer eyeglass, after galvanometer motor and field lens are positioned at described beam shaping mirror, the laser beam reshaping that described solid state laser is sent becomes specific shape and specific optical field distribution, by described field lens, focus on and be irradiated on the interface between multilayer material, decompose boundary material to reach the function of peeling off, use beam expanding lens, produce the laser of a branch of energy for cutting, under the cooperation of mobile platform and Vision Builder for Automated Inspection, there is the cutting function of semi-conducting material, before described galvanometer motor is positioned at field lens, the action of described galvanometer eyeglass is controlled in the instruction of sending according to control software, thereby realize different scanning patterns and cutting path, described mobile platform is positioned at described solid state laser below, and described control running software is on described industrial PC.
In solid laser lift of the present invention and cutting integration apparatus, described beam shaping mirror is shaped as laser facula the small light spot of different geometries.
In solid laser lift of the present invention and cutting integration apparatus, described geometry comprises square, rectangle, circle, ellipse, pentagon and hexagon.
In solid laser lift of the present invention and cutting integration apparatus, small light spot girth is the square hot spot of 3-1000 micron.
In solid laser lift of the present invention and cutting integration apparatus, small light spot is the circular light spot of diameter 3-300 micron.
In solid laser lift of the present invention and cutting integration apparatus, small light spot central energy is the strongest, to surrounding energy, dies down gradually.
In solid laser lift of the present invention and cutting integration apparatus, described Vision Builder for Automated Inspection comprises imaging lens, CCD, video frequency collection card, travelling table.
In solid laser lift of the present invention and cutting integration apparatus, there is the function of peeling off and cutting simultaneously.
In solid laser lift of the present invention and cutting integration apparatus, described beam expander mirror and described beam shaping mirror time-sharing work.
In solid laser lift of the present invention and cutting integration apparatus, described laser is not only for peeling off but also for cutting.
In solid laser lift of the present invention and cutting integration apparatus, the laser using is less than the DPSS solid state laser of 400nm for wavelength.
Accompanying drawing explanation
The present invention is described in connection with accompanying drawing.In accompanying drawing:
Fig. 1 is the schematic diagram of solid laser lift of the present invention and cutting equipment;
Fig. 2 is beam shaping schematic diagram of the present invention;
Fig. 3 a is the pulse hot spot energy profile of prior art, and Fig. 3 b is pulse hot spot energy profile of the present invention;
Fig. 4-Fig. 8 is scanning pattern schematic diagram;
Fig. 9 is the micrograph after the harmless laser lift-off of small light spot of the present invention.
Embodiment
Fig. 1 is the schematic diagram of solid laser lift of the present invention and cutting equipment, comprising solid state laser, and beam shaping mirror, beam expanding lens, galvanometer motor, galvanometer eyeglass, Vision Builder for Automated Inspection and field lens, also comprise mobile platform and industrial PC and control software (not shown).The present invention be take solid state laser as LASER Light Source, and laser below is beam shaping mirror, beam expanding lens, and galvanometer eyeglass, galvanometer motor and field lens, after beam shaping mirror is positioned at laser, the laser beam reshaping that laser is sent is beam shape required for the present invention.Before galvanometer motor is positioned at field lens, the action of galvanometer eyeglass is controlled in the instruction of sending according to control software, thereby realizes the random motion of light beam, different scanning patterns.
According to a kind of laser lift-off GaN of the present invention and Sapphire Substrate peel-off device and stripping means, to take solid state laser as LASER Light Source, using girth is 3～1000 microns, and two angular distance or longest diameter are no more than the small light spot of 400 microns and carry out pointwise laser scanning line by line farthest, wherein the Energy distribution situation of small light spot inside is: spot center energy is the strongest, to surrounding energy, dies down gradually.
The present invention changes the large spot lift-off technology in original laser lift-off, uses small light spot to realize without pinpoint blind peeling GaN film or the GaN base device swept.Small light spot method is not suggested 3 very important reasons always: (1) generally believes that small light spot peels off that hot spot edge problem will to be introduced to GaN base device unit inner, thereby more reduces the quality of laser lift-off; (2) generally believe that the single pulse energy of solid state laser possibly cannot reach the threshold values of laser lift-off; (3) not yet there is report can realize the harmless laser lift-off of small light spot.In the present invention, changed the energy distribution state of hot spot inside, considered the gradual change of hot spot edge energy, Energy distribution as shown in Figure 3 b.Improve the force-bearing situation of GaN sill at hot spot edge, thereby realized the harmless laser lift-off of small light spot.
Solid state laser used in the present invention can be improved solid double-frequency laser light source, its improvement has been to improve the laser energy space of hot spot inside and has announced, take spot center as energy peak, to surrounding energy, die down gradually, whole hot spot internal energy is Gaussian Profile or approximate Gaussian distribution.As shown in Figure 3 b.
The present invention has realized the harmless laser lift-off of small light spot (stripper surface as shown in Figure 9, does not obviously damage), thereby has realized the blind stripping means of sweeping without exact matching hot spot and chip position.The present invention has improved laser lift-off scan mode, traditional handicraft realize to electroplate or the step of bonding after, without again according to GaN device cell adjusted size facula area, without carry out hot spot when starting, accurately locate work, can directly carry out laser scanning, middle without pause, without real-time detection.
The present invention has designed a kind of beam shaping system, changed the spatial distribution of light beam, make it to be more conducive to the Energy distribution in hot spot, before having changed, in original light path, require Energy distribution to be the requirement that flat-top shape distributes completely, make class Gaussian Profile into, waist is less than base width, is conducive to so the unlikely destruction backing material of linking between hot spot, and light path principle as shown in Figure 2.
Optical beam scanning system adopts the similar scanning system of laser marking, this system was not also used in stripping system at present used, so may being this mode, reason do not form product in positioning precision timing existing problems, but because our microcell is peeled off (MALLO) technology, this problem is resolved.Light path principle as shown in Figure 1.
Due to blind successful solution of sweeping scheme, the inventor according to the existing problem of peeling off existence, has proposed some distinctive scannings and has peeled off scheme, with the persistently overheating problem in stripping area of disperseing to cause due to laser pulse again.Owing to forming between middle rete and substrate that gallium drips and nitrogen bubble peeling off, so, different scanning patterns, also have different stress distribution, therefore, the diversified scanning pattern that the inventor proposes, the stress problem of the material that has solved different structure in peeling off.Improved yields simultaneously.
Fig. 4-Fig. 8 shows several typical scanning pattern of the present invention.
The present invention adopts unique scanning road warp, helical scanning from inside to outside for example, helical scanning from outside to inside, heart circular scanning path from inside to outside, concentric circular scans path from outside to inside, the scanning pattern of alternatively up and down, its advantage is to take different scanning strategies according to part characteristic and GaN film characteristics.
Chip cutting after peeling off, the present invention has adopted another set of beam expander system (parallel with the orthopedic systems of peeling off), the motion mode that has used vibration mirror scanning to combine with precision stage.Be aided with Vision Builder for Automated Inspection simultaneously, through the control of special-purpose software, realize the function of chip cutting.The all technology of this part have very ripe application system.Feature of the present invention, utilizes inventor to solve the technology of MALLO, uses the feature of DPSS laser simultaneously, and Promethean peeling off with cutting function unites two into one, for user provides the utility system of a high performance-price ratio.
Compared with prior art, the invention has the beneficial effects as follows: the first, greatly simplified laser lift-off process; The second, greatly improved the operating efficiency of laser lift-off; The 3rd, reduced percent defective; The 4th, peel off cutting one concept and design, fully used the performance of DPSS laser, an equipment can timesharing use become two equipment, has higher cost performance.
Claims (11)
1. a solid laser lift and cutting integration apparatus, it is characterized in that comprising solid state laser, beam shaping mirror, beam expanding lens, galvanometer motor, galvanometer eyeglass, field lens and Vision Builder for Automated Inspection, also comprise mobile platform and industrial PC and control software, described beam shaping mirror and described beam expanding lens are positioned at described solid state laser below concurrently, described galvanometer eyeglass, after galvanometer motor and field lens are positioned at described beam shaping mirror, the laser beam reshaping that described solid state laser is sent becomes specific shape and specific optical field distribution, by field lens, focus on the interface being irradiated between multilayer material, decompose boundary material to reach the function of peeling off, use beam expanding lens, produce the laser of a branch of energy for cutting, under the cooperation of mobile platform and Vision Builder for Automated Inspection, there is the cutting function of semi-conducting material, before described galvanometer motor is positioned at field lens, the action of described galvanometer eyeglass is controlled in the instruction of sending according to control software, thereby realize different scanning patterns and cutting path, described mobile platform is positioned at described solid state laser below, and described control running software is on described industrial PC.
2. solid laser lift as claimed in claim 1 and cutting integration apparatus, is characterized in that described beam shaping mirror is shaped as laser facula the small light spot of different geometries.
3. solid laser lift as claimed in claim 2 and cutting integration apparatus, is characterized in that described geometry comprises square, rectangle, circle, ellipse, pentagon and hexagon.
4. solid laser lift as claimed in claim 2 and cutting integration apparatus, is characterized in that small light spot girth is the square hot spot of 3-1000 micron.
5. solid laser lift as claimed in claim 2 and cutting integration apparatus, is characterized in that small light spot is the circular light spot of diameter 3-300 micron.
6. solid laser lift as claimed in claim 2 and cutting integration apparatus, is characterized in that small light spot central energy is the strongest, to surrounding energy, dies down gradually.
7. solid laser lift as claimed in claim 1 and cutting integration apparatus, is characterized in that described Vision Builder for Automated Inspection comprises imaging lens, CCD, video frequency collection card, travelling table.
8. solid laser lift as claimed in claim 1 and cutting integration apparatus is characterized in that having the function of peeling off and cutting simultaneously.
9. solid laser lift as claimed in claim 1 and cutting integration apparatus, is characterized in that described beam expander mirror and described beam shaping mirror time-sharing work.
10. solid laser lift as claimed in claim 1 and cutting integration apparatus, is characterized in that described laser is not only for peeling off but also for cutting.
11. solid laser lifts as claimed in claim 1 and cutting integration apparatus, is characterized in that used laser is less than the DPSS solid state laser of 400nm for wavelength.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1947239A (en) * | 2004-04-19 | 2007-04-11 | Eo技术有限公司 | Laser processing apparatus |
| CN101055332A (en) * | 2006-04-14 | 2007-10-17 | 北京大学 | Method for preparing waveguide grating in transparent dielectric material |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10113780A (en) * | 1996-10-14 | 1998-05-06 | Nikon Corp | Laser beam machine, laser beam machining method and diffraction grating |
| KR100597948B1 (en) * | 2005-06-03 | 2006-07-07 | 주식회사 이오테크닉스 | Apparatus for cutting electrides using laser and cutting method using the same |
-
2009
- 2009-05-08 CN CN200910136458.9A patent/CN101882578B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1947239A (en) * | 2004-04-19 | 2007-04-11 | Eo技术有限公司 | Laser processing apparatus |
| CN101055332A (en) * | 2006-04-14 | 2007-10-17 | 北京大学 | Method for preparing waveguide grating in transparent dielectric material |
Non-Patent Citations (1)
| Title |
|---|
| JP特开平10-113780A 1998.05.06 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106735963A (en) * | 2017-01-09 | 2017-05-31 | 西安电子科技大学 | A kind of machining beams space propagation pointing accuracy detection means |
| CN106735963B (en) * | 2017-01-09 | 2018-08-21 | 西安电子科技大学 | A kind of machining beams space propagation pointing accuracy detection device |
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