CN109148369A - A kind of heating laser peel-off device - Google Patents
A kind of heating laser peel-off device Download PDFInfo
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- CN109148369A CN109148369A CN201811196018.8A CN201811196018A CN109148369A CN 109148369 A CN109148369 A CN 109148369A CN 201811196018 A CN201811196018 A CN 201811196018A CN 109148369 A CN109148369 A CN 109148369A
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- laser
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- peel
- insulation cover
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 36
- 238000009413 insulation Methods 0.000 claims abstract description 30
- 238000012360 testing method Methods 0.000 claims abstract description 6
- 239000007787 solid Substances 0.000 claims description 14
- 238000005485 electric heating Methods 0.000 claims description 13
- 238000007493 shaping process Methods 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 238000004321 preservation Methods 0.000 claims description 6
- 239000000498 cooling water Substances 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 238000004804 winding Methods 0.000 claims description 4
- 238000007689 inspection Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 17
- 229910052594 sapphire Inorganic materials 0.000 abstract description 16
- 239000010980 sapphire Substances 0.000 abstract description 16
- 238000006062 fragmentation reaction Methods 0.000 abstract description 11
- 238000013467 fragmentation Methods 0.000 abstract description 9
- 238000000407 epitaxy Methods 0.000 abstract description 7
- 229910002601 GaN Inorganic materials 0.000 description 30
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 30
- 238000000034 method Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 4
- 239000010437 gem Substances 0.000 description 4
- 229910001751 gemstone Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 241001391944 Commicarpus scandens Species 0.000 description 3
- 241001062009 Indigofera Species 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- FOXXZZGDIAQPQI-XKNYDFJKSA-N Asp-Pro-Ser-Ser Chemical compound OC(=O)C[C@H](N)C(=O)N1CCC[C@H]1C(=O)N[C@@H](CO)C(=O)N[C@@H](CO)C(O)=O FOXXZZGDIAQPQI-XKNYDFJKSA-N 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004925 denaturation Methods 0.000 description 1
- 230000036425 denaturation Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
- H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention discloses a kind of heating laser peel-off devices, including laser lift-off apparatus body, the laser lift-off apparatus body includes the mobile platform for being set to lower end, the mobile platform is provided with heated base, sample stage is provided on the heated base, the heated base includes the electric heater unit being set to below the sample stage and for heating to the sample stage, the sample stage lower end is additionally provided with the temperature sensor for test sample platform temperature, insulation cover is covered with above the sample stage, the heat-insulation transparent window for facilitating laser to pass through is provided on position corresponding to the top of the insulation cover and the sample stage.Heating laser peel-off device of the invention provides suitable temperature environment for peeling GaN epitaxial wafer, solves the problems, such as the residual mechanical stress of the GaN epitaxy piece of Grown on Sapphire Substrates, generation the case where easy fragmentation when avoiding removing.
Description
Technical field
The present invention relates to a kind of heating laser peel-off devices.
Background technique
III/V nitride based on GaN and InGaN, AlGaN is the semiconductor material being concerned in recent years, is
The core component part of light emitting diode, the direct band gap of 1.9~6.2eV continuous variable, excellent object in semiconductor lighting
Reason, chemical stability, high saturated electrons mobility etc., etc. characteristics, become laser, light emitting diode etc. photoelectron device
The optimal material selection of part.
However, large area GaN material now is grown in mostly due to the limitation of GaN (gallium nitride) growing technology itself
In Sapphire Substrate.Although the GaN of Grown on Sapphire Substrates is of high quality, using also most wide, but due to it is sapphire not
Conductive and poor thermal conduction characteristic significantly limits the development of GaN (third generation semiconductor material) based semiconductor device.In order to
Avoid this disadvantage, after sapphire growth GaN base device, sapphire is removed, and replace high thermal conductivity, highly conductive Si, Cu etc.
The method of substrate is invented.During sapphire removal, main method to be applied is exactly laser lift-off technique.Although blue
The GaN grown on jewel substrate is of high quality, and application is also very extensive, but, since Sapphire Substrate and GaN crystal are heterogeneous
Material, there are a great differences for the lattice constant and thermal expansion coefficient of the two, and the lattice constant between GaN and Sapphire Substrate is lost
With degree more than 14%, thermal mismatching degree is differed more than one times, and lattice mismatch big in this way and differential thermal expansion will necessarily cause in indigo plant
The residual mechanical stress problem of GaN epitaxy piece is grown on jewel substrate, when removing is easy to break.
In laser lift-off, for peeling GaN thickness at 4-5 microns, the fragmentation problem in stripping process is not serious, and thick
When degree is more than 50 microns, wants completely to strip down GaN film with regard to extremely difficult using common removing mode, can generate broken
It splits.
The patent of invention of Patent No. " 200910136458.9 " discloses a kind of " solid laser lift and cutting integration
Equipment " is by laser lift-off GaN epitaxy piece, however, it was found that it provides adding for preference temperature to removing environment due to lacking
Hot heating device leads to easily cause the residual mechanical stress problem for growing GaN epitaxy piece on a sapphire substrate, and when removing is fragile
It splits.
Summary of the invention
In order to solve the above-mentioned technical problem, the object of the present invention is to provide a kind of heating laser peel-off devices, to solve indigo plant
The residual mechanical stress problem of the GaN epitaxy piece grown on jewel substrate avoids cover thickness easy fragmentation when removing when being more than 50 microns
The case where occur.
In order to solve the above technical problems, the present invention adopts the following technical scheme:
A kind of heating laser peel-off device, including laser lift-off apparatus body, the laser lift-off apparatus body include setting
It is placed in the mobile platform of lower end, the mobile platform is provided with heated base, and sample stage is provided on the heated base, described
Heated base includes the electric heater unit being set to below the sample stage and for heating to the sample stage, the sample stage
Lower end is additionally provided with the temperature sensor for test sample platform temperature, is covered with insulation cover, the heat preservation above the sample stage
The heat-insulation transparent window for facilitating laser to pass through is provided on position corresponding to the top of cover and the sample stage.
Further, the laser lift-off apparatus body includes solid state laser, beam shaping mirror, beam expanding lens, galvanometer electricity
Machine, galvanometer eyeglass, field lens and NI Vision Builder for Automated Inspection further include that industrial PC and control software, the beam shaping mirror are located at institute
It states below solid state laser, the beam expanding lens, galvanometer eyeglass, galvanometer motor and field lens, beam shaping mirror are located at the solid and swash
After light device, the laser beam reshaping that the solid state laser is issued, the galvanometer motor is located at before field lens, according to control software
The instruction of sending controls the movement of the galvanometer eyeglass, to realize different scan path and cutting path, the movement is flat
Platform is located at below the solid state laser, and the control software is run on the industrial PC.
Further, the lower end of the insulation cover is connected and fixed in the groove of the heated base upper end.
Further, cavity is provided in the side inner wall of the insulation cover, winding is provided with cooling water in the cavity
Circulation pipe, wherein the inlet and outlet of the cooling water circulation pipe are located on the outer wall of the insulation cover.
Further, the temperature sensor is thermocouple.
Further, the electric heater unit is electric heating wire or electric heating sheets or electric heating lamp.
Further, the temperature sensor and electric heater unit are connect with engineering computer respectively.
Further, the electric heater unit is used to the sample stage being heated to 800-1200 DEG C in 3-5min, such as
900 DEG C or 1000 DEG C.
Further, the height of the heating cavity constituted between the insulation cover and heated base is 300-500mm, preferably
300-400mm。
Further, the transparency window is the heatproof lens or heat-protecting glass for not absorbing laser
Wherein the beam shaping mirror is shaped as laser facula the small light spot of different geometries.In solid of the invention
Laser lift-off and cutting integration apparatus in, the geometry include square, rectangle, circle, ellipse, pentagon and
Hexagon.3-1000 microns of small light spot Zhou Changwei of square hot spot.The circular light spot that small light spot is diameter 3-300 microns.It is small
Spot center energy is most strong, and energy gradually dies down around.The NI Vision Builder for Automated Inspection includes imaging lens, CCD, video acquisition
Card, mobile work platform.Have the function of removing and cutting simultaneously.The beam expander mirror and the beam shaping mirror work simultaneously
Make.In solid laser lift of the invention and cutting integration apparatus, the beam expander mirror and the beam shaping mirror point
When work.The laser is used to remove and cut simultaneously.Used laser is the DPSS solid that wavelength is less than 400nm
Laser.
Compared with prior art, advantageous effects of the invention:
Since Sapphire Substrate and GaN crystal are dissimilar materials, the lattice constant and thermal expansion coefficient of the two exist very
Different, the lattice constant mismatch degree between GaN and Sapphire Substrate is more than 14%, and thermal mismatching degree differs more than one times, big in this way
Lattice mismatch and differential thermal expansion will necessarily cause the residual mechanical stress problem for growing GaN epitaxy piece on a sapphire substrate,
Easy to break when removing, sample stage when being given by heating device using laser lift-off peeling GaN epitaxial wafer provides suitable temperature
Degree environment (800-1000 DEG C is heated in 3-5min, can guarantee to greatest extent at this temperature peeling effect and meanwhile avoid to every
The influence of the translucency of hot transparency window), it reduces since there are a great differences to cause for the lattice constant and thermal expansion coefficient of the two
Lattice constant thermal mismatching between GaN and Sapphire Substrate spends high problem, while being covered sample stage by insulation cover, makes
It is in a closed heating cavity, guarantees peeling effect, further decreases risk easy to break when removing, cavity cavity
Height is 300-500mm (preferably 300-400mm), avoids height too self raising flour dirt window easy to pollute, while avoiding due to highly too
It is low that lens is caused to cause light transmittance to change even fragmentation due to heat radiation denaturation；Heat-insulation transparent window can facilitate laser to pass through and not
Laser, laser energy free of losses are absorbed, and its thermal insulation can be effectively protected well laser head and avoid laser head excessively high
It is damaged under heat.
Detailed description of the invention
The invention will be further described for explanation with reference to the accompanying drawing.
Fig. 1 is the structural schematic diagram of the heating device on the mobile platform of heating laser peel-off device of the present invention；
Fig. 2 is the schematic diagram of cooling water-circulating pipe；
Description of symbols: 1- heated base；2- electric heater unit；3- sample stage；4- thermocouple；5- protective cover；6- every
Thermal lens；7- water inlet；8- water outlet；9- cools down water-circulating pipe；10- mobile platform.
Specific embodiment
A kind of heating laser peel-off device, including the laser lift-off apparatus body (specific structure of laser lift-off apparatus body
With application method referring to the patent in background technique), the laser lift-off apparatus body includes the mobile platform for being set to lower end
10, as shown in Figure 1, being provided with heated base 1 on the mobile platform 10, it is provided with sample stage on the heated base 1, it is described
Heated base 1 includes being set to 3 lower section of sample stage and the electric heater unit 2 for heating to the sample stage 3, the sample
3 lower end of sample platform is additionally provided with the thermocouple 4 for 3 temperature of test sample platform, and insulation cover 5 is covered with above the sample stage 3, described
The heatproof lens 6 for facilitating laser to pass through are provided on position corresponding to the top of insulation cover 5 and the sample stage 3.
In the present embodiment, the lower end of the insulation cover 6 is connected and fixed in the groove 101 of 1 upper end of heated base.Such as
Shown in Fig. 2, cavity is provided in the side inner wall of the insulation cover 5, winding is provided with cooling water-circulating pipe 9 in the cavity,
Wherein the water inlet 7 of the cooling water circulation pipe 9 and water outlet 8 are located on the outer wall of the insulation cover 5.The electric heating
Device 2 is electric heating wire or electric heating sheets, such as nichrome point heater strip.The thermocouple 4 and electric heater unit 2 respectively with work
The connection of journey computer, engineering computer are used for the working condition of the feedback control electric heater unit 2 according to thermocouple 4.The electric heating
Device 2 is used to the sample stage being heated to 600-1500 DEG C, preferably 800-1200 DEG C in 3-5min, such as 800 DEG C, 900 DEG C,
1000 DEG C etc..The control circuit being related to is ordinary skill in the art means, not excessive herein to repeat.
In use, then covering upper protective cover 5 by being placed on sample stage 3 in the Sapphire Substrate of growth GaN material, opening
Dynamic electric heater unit 2, to be heated to set temperature, thermocouple feedback signal gives engineering computer, and control electric heater unit stops adding
Then with by laser head the Sapphire Substrate that growth GaN material is irradiated in the scanning of laser light heatproof lens 6 occurs for heat, to reach
To the purpose of peeling GaN epitaxial wafer.It is located at suitable temperature environment when due to GaN epitaxy piece, avoids due to GaN material and indigo plant
There are a great differences, and lattice constant thermal mismatching between the two to be caused to be spent for the lattice constant and thermal expansion coefficient of jewel substrate
High problem.And heatproof lens 6 can facilitate laser to pass through and laser head is effectively protected, and avoid laser head in excessively high heat
The lower damage of amount.
Embodiment 1
A kind of heating laser peel-off device, including the laser lift-off apparatus body (specific structure of laser lift-off apparatus body
With application method referring to the patent in background technique), the laser lift-off apparatus body includes the mobile platform for being set to lower end
10, as shown in Figure 1, being provided with heated base 1 on the mobile platform 10, it is provided with sample stage on the heated base 1, it is described
Heated base 1 includes being set to 3 lower section of sample stage and the electric heater unit 2 for heating to the sample stage 3, the sample
3 lower end of sample platform is additionally provided with the thermocouple 4 for 3 temperature of test sample platform, and insulation cover 5 is covered with above the sample stage 3, described
The heatproof lens 6 for facilitating laser to pass through are provided on position corresponding to the top of insulation cover 5 and the sample stage 3.The guarantor
The lower end of temperature cover 6 is connected and fixed in the groove 101 of 1 upper end of heated base.As shown in Fig. 2, the side of the insulation cover 5
Be provided with cavity in inner wall, winding is provided with cooling water-circulating pipe 9 in the cavity, wherein the cooling water circulation pipe 9 into
The mouth of a river 7 and water outlet 8 are located on the outer wall of the insulation cover 5.The electric heater unit 2 is electric heating wire or electric heating
Piece, such as nichrome point heater strip.The thermocouple 4 and electric heater unit 2 are connect with engineering computer respectively, and engineering computer is used for
According to the working condition of the feedback control electric heater unit 2 of thermocouple 4.The electric heater unit 2 is by the sample stage in 4min
Inside it is heated to 900 DEG C.
Embodiment 2
It is other same as Example 1, the difference is that insulation cover 6, which is not used, forms closed heating cavity.
Embodiment 3
It is other same as Example 1, the difference is that the electric heater unit 2 adds the sample stage in 4min
Heat is to 600 DEG C or 700 DEG C.
Embodiment 4
It is other same as Example 1, the difference is that the electric heater unit 2 adds the sample stage in 4min
Heat is to 1300 DEG C.
Embodiment 5
It is other same as Example 1, the difference is that the electric heater unit 2 adds the sample stage in 4min
Heat is to 1600 DEG C.
Embodiment 6
It is other same as Example 1, the difference is that not added using the electric heater unit 2 to the sample stage
Heat.
Embodiment 7
It is other same as Example 1, the difference is that the electric heater unit 2 adds the sample stage in 4min
Heat is to 1200 DEG C.
Embodiment 8
It is other same as Example 1, the difference is that the electric heater unit 2 adds the sample stage in 4min
Heat is to 800 DEG C.
The result of each embodiment is as shown in the table:
In actual operation when laser lift-off, for peeling GaN thickness at 4-5 microns, the fragmentation problem in stripping process is simultaneously
It is not serious, and when thickness is more than 50 microns, want completely to strip down GaN film using common removing mode and just be stranded very much
Difficulty can generate fragmentation.The present invention is by a large amount of research and practice discovery, when cover thickness is more than 50 microns, by sample
Sample platform is heated to 800-1200 DEG C and insulation cover is used to form heat preservation (heating) chamber heat preservation, can effectively avoid using commonly
Removing mode leads to the problem of fragmentation when completely stripping down GaN film, and peeling effect stability is high, tests 20 times
Removing, without a fragmentation phenomenon；When without heating, 20 removings are tested, 12 fragmentations occur；And when heating but not keeping the temperature, examination
20 removings are tested, 6 fragmentations occur.It can be seen that by being heated to 800-1200 DEG C to sample stage and forming heat preservation using insulation cover
The heat preservation of (heating) chamber effectively avoids completely removing the GaN film that thickness is more than 50 microns using common removing mode
Fragmentation is led to the problem of when getting off.
Embodiment described above is only that preferred embodiment of the invention is described, and is not carried out to the scope of the present invention
It limits, without departing from the spirit of the design of the present invention, those of ordinary skill in the art make technical solution of the present invention
Various changes and improvements, should all fall into claims of the present invention determine protection scope in.
Claims (10)
1. a kind of heating laser peel-off device, including laser lift-off apparatus body, the laser lift-off apparatus body includes setting
Mobile platform in lower end, it is characterised in that: the mobile platform is provided with heated base, is provided with sample on the heated base
Sample platform, the heated base include the electric heater unit being set to below the sample stage and for heating to the sample stage,
The sample stage lower end is additionally provided with the temperature sensor for test sample platform temperature, is covered with heat preservation above the sample stage
The heat-insulation transparent window for facilitating laser to pass through is provided on position corresponding to cover, the top of the insulation cover and the sample stage.
2. heating laser peel-off device according to claim 1, it is characterised in that: the laser lift-off apparatus body includes
Solid state laser, beam shaping mirror, beam expanding lens, galvanometer motor, galvanometer eyeglass, field lens and NI Vision Builder for Automated Inspection, further include industry control
Computer and control software, the beam shaping mirror are located at below the solid state laser, the beam expanding lens, galvanometer eyeglass, galvanometer
Motor and field lens, beam shaping mirror are located at after the solid state laser, the laser beam reshaping that the solid state laser is issued,
The galvanometer motor is located at before field lens, the movement of the galvanometer eyeglass is controlled according to the instruction that control software issues, to realize
Different scan paths and cutting path, the mobile platform are located at below the solid state laser, the control software operation
On the industrial PC.
3. heating laser peel-off device according to claim 1, it is characterised in that: the lower end of the insulation cover connects and fixes
In in the groove of the heated base upper end.
4. heating laser peel-off device according to claim 1, it is characterised in that: set in the side inner wall of the insulation cover
It is equipped with cavity, winding is provided with cooling water-circulating pipe in the cavity, wherein the water inlet of the cooling water circulation pipe and water outlet
Mouth is located on the outer wall of the insulation cover.
5. heating laser peel-off device according to claim 1, it is characterised in that: the temperature sensor is thermocouple.
6. heating laser peel-off device according to claim 1, it is characterised in that: the electric heater unit is electric heating wire
Or electric heating sheets or electric heating lamp.
7. heating laser peel-off device according to claim 1, it is characterised in that: the temperature sensor and electric heating dress
It sets and is connect respectively with engineering computer.
8. heating laser peel-off device according to claim 1, it is characterised in that: the electric heater unit is used for will be described
Sample stage is heated to 800-1200 DEG C in 3-5min.
9. heating laser peel-off device according to claim 1, it is characterised in that: between the insulation cover and heated base
The height of the heating cavity of composition is 300-500mm.
10. heating laser peel-off device according to claim 7, it is characterised in that: the transparency window be heatproof lens or
Glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811196018.8A CN109148369B (en) | 2018-10-15 | 2018-10-15 | Heating laser stripping equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811196018.8A CN109148369B (en) | 2018-10-15 | 2018-10-15 | Heating laser stripping equipment |
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| Publication Number | Publication Date |
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| CN109148369A true CN109148369A (en) | 2019-01-04 |
| CN109148369B CN109148369B (en) | 2024-03-15 |
Family
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|---|---|---|---|
| CN201811196018.8A Active CN109148369B (en) | 2018-10-15 | 2018-10-15 | Heating laser stripping equipment |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110085537A (en) * | 2019-04-15 | 2019-08-02 | 东莞市中镓半导体科技有限公司 | The device for high-temperature laser removing of temperature-controllable |
| CN110102877A (en) * | 2019-05-07 | 2019-08-09 | 东莞市中镓半导体科技有限公司 | The laser lift-off device and method of liquid metal auxiliary heat conduction |
| CN110534477A (en) * | 2019-08-26 | 2019-12-03 | 东莞市中镓半导体科技有限公司 | The integrated equipment of laser lift-off |
| CN113432379A (en) * | 2021-07-30 | 2021-09-24 | 上海睿昇半导体科技有限公司 | Heating and cooling integrated tray body and manufacturing method and application thereof |
| CN113628960A (en) * | 2021-07-28 | 2021-11-09 | 山东大学 | High-temperature laser stripping device and method for GaN single crystal substrate on sapphire template |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5424244A (en) * | 1992-03-26 | 1995-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Process for laser processing and apparatus for use in the same |
| CN101882578A (en) * | 2009-05-08 | 2010-11-10 | 东莞市中镓半导体科技有限公司 | Integral solid laser lift-off and cutting equipment |
| KR20150100370A (en) * | 2014-02-25 | 2015-09-02 | 주식회사 코윈디에스티 | A laser polishing system |
| CN107283068A (en) * | 2016-03-31 | 2017-10-24 | 大族激光科技产业集团股份有限公司 | A kind of aluminium alloy diced system and method |
| CN208889638U (en) * | 2018-10-15 | 2019-05-21 | 保定中创燕园半导体科技有限公司 | A kind of heating laser peel-off device |
-
2018
- 2018-10-15 CN CN201811196018.8A patent/CN109148369B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5424244A (en) * | 1992-03-26 | 1995-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Process for laser processing and apparatus for use in the same |
| US20030122131A1 (en) * | 1992-03-26 | 2003-07-03 | Hongyong Zhang | Active matrix display device |
| CN101882578A (en) * | 2009-05-08 | 2010-11-10 | 东莞市中镓半导体科技有限公司 | Integral solid laser lift-off and cutting equipment |
| KR20150100370A (en) * | 2014-02-25 | 2015-09-02 | 주식회사 코윈디에스티 | A laser polishing system |
| CN107283068A (en) * | 2016-03-31 | 2017-10-24 | 大族激光科技产业集团股份有限公司 | A kind of aluminium alloy diced system and method |
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