CN107570894A - The processing method of substrate and the processing unit (plant) of substrate - Google Patents
The processing method of substrate and the processing unit (plant) of substrate Download PDFInfo
- Publication number
- CN107570894A CN107570894A CN201710115492.2A CN201710115492A CN107570894A CN 107570894 A CN107570894 A CN 107570894A CN 201710115492 A CN201710115492 A CN 201710115492A CN 107570894 A CN107570894 A CN 107570894A
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- substrate
- laser
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- current mirror
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- 239000000758 substrate Substances 0.000 title claims abstract description 69
- 238000003672 processing method Methods 0.000 title claims abstract description 12
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- 239000000428 dust Substances 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 208000037656 Respiratory Sounds Diseases 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Abstract
The invention provides the processing method of substrate and the processing unit (plant) of substrate, in the case where being processed to substrate irradiation laser, prevents damage of the substrate along with laser heat in possible trouble.Aperture position in substrate (20), the laser as caused by LASER Light Source (11) is irradiated in concentric circles, and carries out perforate processing via current mirror (12), F theta lens (15).When irradiating laser, from low-temperature air generator (18) via air nozzle (19) by the blow air of low temperature to substrate (20).In such manner, it is possible to suppress to crack when perforate is processed, and dust caused by processing can be removed.
Description
Technical field
The present invention relates to using LASER Light Source to various substrates (for example, semiconductor crystal wafer (for example, Silicon Wafer), other crisp
Property material substrate (for example, glass substrate, aluminum oxide substrate, sapphire substrate) etc.) carry out perforate, cut-out processing substrate
The processing unit (plant) of processing method and substrate.
Background technology
In the past, to semiconductor crystal wafer carry out perforate when using dry-etching to semiconductor crystal wafer carry out perforate processing or
Person carries out perforate processing using YAG (yag crystal) laser like that as Patent Document 1.In addition, in patent document 2
In, it is proposed that the processing method for carrying out perforate processing to semiconductor crystal wafer using W pulsed laser.
【Prior art literature】
【Patent document】
Patent document 1：Japanese Unexamined Patent Publication 2002-239765 publications
Patent document 2：Japanese Unexamined Patent Publication 2004-209541 publications
However, it is necessary to set multiple holes on the substrates such as semiconductor crystal wafer in conventional laser processing, it is desirable to contract
The production interval time of short perforate processing.
In addition, in the case where carrying out hole machined, cutting off processing using laser, because condition causes the near surface in substrate
Temperature rises.Moreover, cracked sometimes because temperature rises in processing department and its peripheral part, fragmentation.Accordingly, there exist be difficult to
Problem points as perforate processing are carried out with the short time in narrower region.
The content of the invention
The present invention in view of for this conventional substrate processing method the problem of and propose, the problem of its technology is to carry
The processing method of substrate and the processing unit (plant) of substrate of problem points caused by the enough heats eliminated during because of processing of energy supply.
In order to solve the problem, the processing method of substrate of the invention has used LASER Light Source, and it includes：By laser guide
The substrate, and the irradiation position of laser is scanned, so as to be processed to substrate；And when irradiating the laser,
Air is blowed to the irradiation position of the laser of substrate, so as to which substrate be cooled down.
In order to solve the problem, the processing unit (plant) of substrate of the invention possesses：LASER Light Source；Current mirror, make the laser
The light of light source changes to two direction of principal axis；F-theta lens, make the optically focused on substrate of the light after being reflected using the current mirror；It is low
Warm air generator；Air nozzle, by the blow air of the low temperature from the low-temperature air generator to Working position；And
Controller, the current mirror and the low-temperature air generator are controlled, by laser guide substrate and scanning laser, so as to institute
Substrate is stated to be processed, and at the time of laser is irradiated to the substrate, by the low temperature from the low-temperature air generator
Blow air is to Working position.
According to the present invention with this feature, due to the sky of low temperature is blowed to the Working position for irradiating laser by air blast
Gas, therefore the rising that can suppress temperature can be obtained, and can suppress for effect as the damage of substrate.In addition, pass through
Air is blowed, effect as can dust caused by processing be removed can be obtained.
Brief description of the drawings
Fig. 1 is the figure for the schematic configuration for representing the laser processing device involved by embodiments of the present invention.
Fig. 2 (a), (b) is cuing open for a part for the front and rear substrate for representing the Laser Processing involved by present embodiment
Face figure.
Fig. 3 (a)~(c) is the figure for the procedure of processing for representing the laser processing involved by present embodiment.
Fig. 4 is the skeleton diagram of an example of the layout processing for representing the Laser Processing involved by present embodiment.
Fig. 5 (a), (b) is the power for each step for representing the processing method involved by present embodiment and has flawless
The figure of a caused example.
Embodiment
Then, while illustrating embodiments of the present invention referring to the drawings one side.Fig. 1 is to represent embodiments of the present invention institute
The figure of the schematic configuration of the laser processing device used.As shown in this figure, laser processing device 10 includes LASER Light Source 11.Laser
Light source 11 is for example set to psec UV laser, psec green laser, CO2Laser etc. can irradiate the power variable of laser with pulse type
The light source of type.Moreover, the output of the LASER Light Source 11 is directed to current mirror 13 via mirror 12a, 12b, 12c.Current mirror 13 is by x
Minutely one group of mirror 13x, 13y of scanning laser light source are formed on direction of principal axis and perpendicular y-axis direction, the energy of current mirror 13
It is enough based on the control from controller 14 on arbitrary direction scanning laser.Laser after being reflected using current mirror 13 is via F-
Theta lens (f θ lens) 15 are directed on substrate 20.In addition, F-theta lens 15 be used on the base plate 20 vertically according to
Penetrate laser and on substrate in a manner of converging focus optically focused, and independent of the light path determined by current mirror 13.Substrate 20 configures
On workbench 16, workbench 16 is maintained on XY objective tables 17, using XY objective tables 17, can make substrate 20 in work top
On to both direction move.In addition, laser processing device 10 includes low-temperature air generator 18.Low-temperature air generator 18 is based on
Control from controller 14 produces Cryogenic air, blows the air after cooling via air nozzle 19 at the time of laser is irradiated
The laser irradiating position being sent on substrate.Controller 14 is used for control electric current mirror 12 as described later and carried with LASER Light Source 11, XY
Thing platform 17 and low-temperature air generator 18, and control and irradiate laser on the base plate 20 and substrate is processed.
Low-temperature air generator 18 can for example make the chilling temperature of processing department for 10 DEG C and export 50L/ points low
The low-temperature air generator of warm air.In addition, it is set to the base of glass, aluminum oxide, sapphire etc. as the substrate 20 of processing object
Plate, semiconductor crystal wafer.Here, for substrate 20, such as a diameter of tens μm~1mm small multiple holes are set.
Then, the processing method of the laser processing device to having used present embodiment illustrates.First, to a hole
Perforate processing illustrate.Perforate processing is carried out by following step S1~S3 process.Fig. 2 (a), (b) is to represent
As the profile before and after the perforate processing of a part for the sapphire substrate 20 of processing object.Fig. 3 (a)~(c) is to represent
The figure of section in processing.
First, in step sl, as shown in Fig. 3 (a), so that the surface of substrate 20 is focus and the diameter as defined in
Mode laser is vertically annularly irradiated to substrate 20.Now, as shown in figure 3, centered on the position of perforate, swept with maximum
Retouch radius R11 laser of the scanning from LASER Light Source and be annularly irradiated.Then, with as the diameter R12 more slightly smaller than its
The mode of concentric circles annularly irradiate laser.And then radius is reduced to R13, R14 successively, irradiate laser with concentric circles.
If being set to the 1st layer of L1, shallower circular hole can be formed after the 1st layer of L1 irradiation terminates.Then, the 2nd
It is sequentially reduced the sweep radius of laser in layer L2 with radius R21, R22, R23, R24 in same position also samely, makes base
The surface in the hole of plate is focal position and irradiated in concentric circles, terminates the 1st step S1.If the 1st step S1 irradiation knot
Beam, then the shallow circular hole using most peripheral as the almost identical depth in inclined-plane can be formed as shown in Fig. 3 (a).
Then, in step s 2, layer L3 processing is carried out first.In layer L3, as shown in Fig. 3 (b), as center with
Concentric circles equal layer L1, L2, the surface for making the hole of substrate is focal position, with the maximum scan radius R11 than step S1 slightly
Small maximum scan radius R31 annularly irradiates laser.Then, it is in the sweep radius R32 more slightly smaller than maximum scan radius R31
Concentric circles are scanned.And then it is set to smaller sweep radius R33 and in concentric circles irradiation laser.Swept by such
Retouch, the hole slightly deeper than the hole formed in step sl can be formed in layer L3.Then, in layer L4, exist also samely
Same position is sequentially reduced the sweep radius of laser with radius R41, R42, R43, and the surface for making the hole of substrate is focal position weight
It is concentric circles again.And then for layer L5, laser is annularly also sequentially reduced with radius R51, R52, R53 identically with layer L3
Sweep radius, while laser is irradiated using the surface in the hole of substrate as focal position.If terminating second step S2 irradiation,
Then as shown in Fig. 3 (b), the hole of (a) than Fig. 3 slightly deep concentric circles can be formed.
Then, in step s3, it is concentric with formed by third step, center and the last time as shown in Fig. 3 (c)
The surface in the hole of the smaller substrate of the equal and maximum diameter of circle is focal position, irradiates laser in concentric circles.In third step
In, it is R61, R62 to make radius.So, if terminating third step, deeper hole 21 can be formed.
So, compared with step S1, it is gradually reduced the laser scanning radius of most peripheral successively in step S2, S3, therefore
With being all set to compared with the situation of step S1 identical sweep radius, can terminate to be directed to sweeping for the laser in a hole at high speed
Retouch.
Fig. 4 is the figure of an example of layout processing when representing the perforate processing involved by the embodiment.Such as this figure
Shown, it is, for example, 300 μm to make hole interval, and it is 50 μm to make aperture, and concentration offers in length and breadth totally 25 holes.In this case, it is right
In 25 holes, the 1st step S1 processing is carried out first.When carrying out perforate processing, while will be by low using air nozzle 19
The air of low temperature caused by warm air generator 18 blows as air blast (air blow).In such manner, it is possible to when controlling the laser to irradiate
Temperature rise.Then, step S2 perforate processing is carried out to the hole of whole.In the processing, also while as described above will
The air of low temperature blows as air blast as caused by low-temperature air generator 18.And then third step S3's is carried out to the hole of whole
Perforate is processed.When the perforate is processed, also described above like that using the air of the low temperature as caused by low-temperature air generator 18 as
Air blast blows.In such manner, it is possible to which the temperature for suppressing machining area rises, and the inhibition of crackle can be obtained.In addition, by blowing
Air is sent, the attachment in dust caused by processing can be reduced.
Fig. 5 (a) is change and the crackle for representing the power without each step in the case of the cooling based on air blast
Generation state figure.Here, show makes the changed power of laser for 1.2W~2.4W and correspondingly for step S1
The changed power of laser is set to produce situation for the crackle in the case of 2W~10W in step S2, S3.If it is not based on low temperature
The cooling blowed of air, then the laser power level regardless of step S1, the 2nd, third step laser power for 10W,
In the case of 8W, crackle is all generated.In addition, in the case where the 1st step S1 power is more than 1.6W, if the 2nd, the 3rd
The power of step is 6W, then cracks.In the case where the 1st step is more than 2W, if the 2nd, power of third step is
4W, then crack.
On the other hand, in the case of having used air blast in the lump shown in (b) such as Fig. 5, if the 1st step S1 work(
Rate is below 1.6W, then in the case of being below 8W in the 2nd, third step, will not crack.Therefore, it is judged as with base
In the inhibition of air blast.Therefore, it is possible to irradiate laser in the range of not cracking with higher laser power, and can
Improve process velocity.
In addition, in this embodiment, maximum scan radius is sequentially reduced in step S1~S3 as shown in Figure 3 and
Laser is irradiated in concentric circles, but as long as be two or more, arbitrary number can be set to.That is, can use
The step of n-th (n is more than 2 natural number), make sweep radius difference sharp to irradiate successively in multiple step Si (i=1~n)
Light, and form hole.In addition, in each step, can also be while the sweep radius from minimum increases sequentially into maximum scan radius
Large radius, while being scanned.
In addition, in this embodiment, although the perforate processing of the processing unit (plant) to having used substrate is said
It is bright, but the invention is not limited in perforate processing, can also be applied to irradiate and cut off in a manner of making laser point-blank move
The situation of substrate.
Industrial workability
The present invention can be preferably used for forming multiple holes, cut-out base in substrates such as sapphire substrate, semiconductor crystal wafers
The laser processing device of plate.
Symbol description
10 laser processing devices
11 LASER Light Sources
12a, 12b, 12c mirror
13 current mirrors
14 controllers
15 F-theta lens
16 workbench
17 XY objective tables
18 low-temperature air generators
19 air nozzles
20 substrates.
Claims (3)
1. a kind of processing method of substrate, the processing method of the substrate have used LASER Light Source, wherein, including：
It is scanned by substrate described in laser guide, and to the irradiation position of laser, so as to be processed to substrate；And
When irradiating the laser, air is blowed to the irradiation position of the laser of substrate, so as to which substrate be cooled down.
2. a kind of processing unit (plant) of substrate, wherein, including：
LASER Light Source；
Current mirror, the light of the LASER Light Source is set to change to two direction of principal axis；
F-theta lens, make the optically focused on substrate of the light after being reflected using the current mirror；
Low-temperature air generator；
Air nozzle, by the blow air of the low temperature from the low-temperature air generator to Working position；And
Controller, the current mirror and the low-temperature air generator are controlled, by laser guide substrate and scanning laser, so that
The substrate is processed, and at the time of laser is irradiated to the substrate, by from the low of the low-temperature air generator
The blow air of temperature is to Working position.
3. the processing unit (plant) of substrate according to claim 2, wherein,
Laser after being reflected by using the current mirror is directed into the substrate, the F- via the F-theta lens
Theta lens are used to vertically irradiate laser and the on the substrate optically focused in a manner of converging focus on the substrate, and
Independent of the light path determined by the current mirror.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-129979 | 2016-06-30 | ||
| JP2016129979A JP2018006509A (en) | 2016-06-30 | 2016-06-30 | Processing method of substrate and processing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107570894A true CN107570894A (en) | 2018-01-12 |
Family
ID=60949706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710115492.2A Pending CN107570894A (en) | 2016-06-30 | 2017-02-28 | The processing method of substrate and the processing unit (plant) of substrate |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2018006509A (en) |
| KR (1) | KR20180003407A (en) |
| CN (1) | CN107570894A (en) |
| TW (1) | TW201812877A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111331262A (en) * | 2020-03-23 | 2020-06-26 | 广州兴森快捷电路科技有限公司 | Packaging carrier plate and method for processing inner groove of metal cavity |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102508154B1 (en) * | 2018-09-10 | 2023-03-09 | 삼성전자주식회사 | Inspeciton system of semiconductor wafer and method of driving the same |
| US11754510B2 (en) | 2021-10-14 | 2023-09-12 | Samsung Electronics Co., Ltd. | Inspection system of semiconductor wafer and method of driving the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5686692A (en) * | 1979-12-14 | 1981-07-14 | Mitsubishi Heavy Ind Ltd | Punching working method by means of laser |
| JPH11144970A (en) * | 1997-11-11 | 1999-05-28 | Toshiba Corp | Method and apparatus for manufacturing iron core for transformer |
| JPH11284312A (en) * | 1998-03-30 | 1999-10-15 | Ibiden Co Ltd | Method and device for boring via hole |
| JP2007118054A (en) * | 2005-10-28 | 2007-05-17 | Aisin Seiki Co Ltd | Method and apparatus for laser beam machining |
| CN101462822A (en) * | 2007-12-21 | 2009-06-24 | 鸿富锦精密工业（深圳）有限公司 | Friable non-metal workpiece with through hole and method of processing the same |
| CN101935156A (en) * | 2009-06-30 | 2011-01-05 | 三星钻石工业股份有限公司 | Utilize the glass substrate processing unit (plant) of laser |
| CN102858489A (en) * | 2010-04-12 | 2013-01-02 | 三菱电机株式会社 | Laser-cutting method and laser-cutting device |
| KR20130023081A (en) * | 2011-08-24 | 2013-03-07 | 미쓰보시 다이야몬도 고교 가부시키가이샤 | Scribe method for glass substrate |
| CN203390389U (en) * | 2013-07-16 | 2014-01-15 | 桂林电子科技大学 | System for etching fragile material ultrathin sheet with water jet and laser |
| JP5805008B2 (en) * | 2012-05-21 | 2015-11-04 | 三菱電機株式会社 | Laser processing machine for glass fine hole processing and glass fine hole processing method |
| CN105189018A (en) * | 2013-05-09 | 2015-12-23 | 丰田自动车株式会社 | Laser drilling method and apparatus with radiation output changes in a radial direction during drilling of a workpiece |
-
2016
- 2016-06-30 JP JP2016129979A patent/JP2018006509A/en active Pending
-
2017
- 2017-02-09 TW TW106104241A patent/TW201812877A/en unknown
- 2017-02-28 CN CN201710115492.2A patent/CN107570894A/en active Pending
- 2017-03-06 KR KR1020170028059A patent/KR20180003407A/en not_active Application Discontinuation
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5686692A (en) * | 1979-12-14 | 1981-07-14 | Mitsubishi Heavy Ind Ltd | Punching working method by means of laser |
| JPH11144970A (en) * | 1997-11-11 | 1999-05-28 | Toshiba Corp | Method and apparatus for manufacturing iron core for transformer |
| JPH11284312A (en) * | 1998-03-30 | 1999-10-15 | Ibiden Co Ltd | Method and device for boring via hole |
| JP2007118054A (en) * | 2005-10-28 | 2007-05-17 | Aisin Seiki Co Ltd | Method and apparatus for laser beam machining |
| CN101462822A (en) * | 2007-12-21 | 2009-06-24 | 鸿富锦精密工业（深圳）有限公司 | Friable non-metal workpiece with through hole and method of processing the same |
| CN101935156A (en) * | 2009-06-30 | 2011-01-05 | 三星钻石工业股份有限公司 | Utilize the glass substrate processing unit (plant) of laser |
| CN102858489A (en) * | 2010-04-12 | 2013-01-02 | 三菱电机株式会社 | Laser-cutting method and laser-cutting device |
| KR20130023081A (en) * | 2011-08-24 | 2013-03-07 | 미쓰보시 다이야몬도 고교 가부시키가이샤 | Scribe method for glass substrate |
| JP5805008B2 (en) * | 2012-05-21 | 2015-11-04 | 三菱電機株式会社 | Laser processing machine for glass fine hole processing and glass fine hole processing method |
| CN105189018A (en) * | 2013-05-09 | 2015-12-23 | 丰田自动车株式会社 | Laser drilling method and apparatus with radiation output changes in a radial direction during drilling of a workpiece |
| CN203390389U (en) * | 2013-07-16 | 2014-01-15 | 桂林电子科技大学 | System for etching fragile material ultrathin sheet with water jet and laser |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111331262A (en) * | 2020-03-23 | 2020-06-26 | 广州兴森快捷电路科技有限公司 | Packaging carrier plate and method for processing inner groove of metal cavity |
| CN111331262B (en) * | 2020-03-23 | 2021-12-24 | 广州兴森快捷电路科技有限公司 | Packaging carrier plate and method for processing inner groove of metal cavity |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20180003407A (en) | 2018-01-09 |
| TW201812877A (en) | 2018-04-01 |
| JP2018006509A (en) | 2018-01-11 |
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