CN103387335B - Cutter for substrate and method thereof - Google Patents
Cutter for substrate and method thereof Download PDFInfo
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- CN103387335B CN103387335B CN201310165967.0A CN201310165967A CN103387335B CN 103387335 B CN103387335 B CN 103387335B CN 201310165967 A CN201310165967 A CN 201310165967A CN 103387335 B CN103387335 B CN 103387335B
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- 239000000758 substrate Substances 0.000 title claims abstract description 195
- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000006227 byproduct Substances 0.000 claims description 12
- 238000005286 illumination Methods 0.000 claims description 12
- 238000005520 cutting process Methods 0.000 description 29
- 230000008569 process Effects 0.000 description 8
- 238000001816 cooling Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000004447 accommodation reflex Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000003245 working effect Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0626—Energy control of the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/16—Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
Abstract
The present invention relates to a kind of cutter for substrate and method thereof.The cutter for substrate that the present invention relates to, is characterized in that, comprising: worktable (100), for placing substrate (10); Laser portion (200), for generating laser beam (L1, L2); Spectroscope (BS), is divided into the first laser beam (L1) and the second laser beam (L2) by laser beam (L1, L2); First processing department (300), utilizes described first laser beam (L1), carries out line processing, to form the first etched part (P1, P2) to substrate (10) inside; And second processing department (400), utilize described second laser beam (L2), beam wobbling line processing is carried out, to form the second etched part (P3) to substrate (10) inside.
Description
Technical field
The present invention relates to cutter for substrate and method thereof.More particularly, relating to one utilizes the first laser beam to rule (scribe) processing to form the first etched part to substrate inside, the second laser beam is utilized to carry out beam wobbling line processing to form the second etched part to substrate inside, thus the cutter for substrate of cutting substrate and method thereof.
Background technology
Utilize the materials processing of laser, expand rapidly in the application of whole industry.Laser processing in the handiness of accuracy, technique, noncontact processibility, have excellent specific property in the heat affecting of material etc., instead of the existing technique that the after-applied mechanical stress utilizing diamond etc. to generate line of cut carrys out the substrate such as cutting semiconductor chip or glass.
Fig. 1 is the schematic diagram of the structure of the cutter for substrate that prior art relates to.
With reference to Fig. 1, in order to cut the substrate 10 being placed on worktable 1, using the break bar 4 formed by the material that the hardness such as diamond or nickel is good, forming the line with x-axis parallel direction first on the substrate 10.Secondly, the laser beam L generated by laser portion 2 is carried out optically focused to heat the line region using break bar 4 to be formed on the substrate 10 by condenser lens 3.Then, the line region of being heated by laser beam L is cooled via the cooling gas of cooling end 5 or cooling liqs.As mentioned above, after forming line on the substrate 10 by the mechanical workout of use break bar 4, through heating and cooling, online Area generation tensile stress is with cutting substrate.In addition, the prior art of cutting substrate is open by Korean Patent Laid 1998-084225 grade.
The cutter for substrate that prior art relates to, carrys out cutting substrate by tensile stress, so produce tiny crack and processing fragment etc. on line of cut.These tiny cracks and processing fragment etc., can reduce the cutting quality of substrate.
In addition, recently, the display unit such as LED, LCD use thin base, but on ultrathin substrate, do not produce the tensile stress needed for cutting substrate, so described method can not be utilized to carry out substrate cut.
In addition, recently, display unit not only uses the substrate that thickness is thin, also uses large-area substrates.Large-area substrates, because tiny crack also can affect its cutting quality, so can not utilize described method to carry out substrate cut.In addition, when utilizing laser cutting large-area substrates, too much process time and cost is consumed.
Summary of the invention
Therefore, the present invention proposes in order to the problem solving prior art as above, and object is, provides a kind of cutter for substrate and the method thereof that can improve substrate cut quality.
In addition, the object of the invention is to, provide a kind of can the cutter for substrate of cutting ultra thin type substrate and method thereof.
In addition, the object of the invention is to, a kind of cutter for substrate and the method thereof that can save the cutting large-area substrates of process time and cost are provided.
Described object of the present invention is realized by following cutter for substrate, and this cutter for substrate, comprising: worktable, for placing substrate; Laser portion, for generating laser beam; Spectroscope, is divided into the first laser beam and the second laser beam by described laser beam; First processing department, utilizes described first laser beam to carry out line processing, to form the first etched part to described substrate inside; And second processing department, utilize described second laser beam to carry out beam wobbling line processing, to form the second etched part to described substrate inside.
Described first processing department can comprise at least one lens working.
Described lens working can form focal point by the different positions respectively in substrate inside.
Described lens working can carry out to described substrate inside the line processing that thickness is 10 μm to 500 μm.
The thickness of described substrate can be below 2mm, and the length on a limit of described substrate is 0.5m to 3.5m.
Described second processing department can form described second etched part by the angle changing substrate described in described second laser beam irradiation.
Changed by the illumination angle of described second processing department, the second laser beam irradiation is 10mm to 300mm to the scope of described substrate.
By product removing unit can also be comprised, the by product produced during for sucking processing described substrate.
The wavelength of described laser beam can be 100nm to 1100nm.
The pulse width of described laser beam can be 100fs to 1ns.
The degree of depth of described first etched part can be identical to the distance essence in the regulation place of described substrate inside with the lower surface from described substrate, and the degree of depth of described second etched part is identical to the distance essence in the described regulation place of described substrate inside with the upper surface from described substrate.
In addition, described object of the present invention is realized by method for dividing substrate, this method for dividing substrate, is characterized in that, utilizes the first processing department comprising at least one lens working, line processing is carried out to substrate inside the first laser beam, to form the first etched part, utilize the second processing department, carry out beam wobbling line processing to described substrate is inner with the second laser beam, to form the second etched part, thus cut described substrate.
According to the present invention as constructed as above, the cutting quality of substrate can be improved.
In addition, can cutting ultra thin type substrate.
In addition, process time and cost can be saved, cutting large-area substrates.
In addition, do not need the device of cooling base can cutting substrate yet.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the structure of the cutter for substrate that prior art relates to.
Fig. 2 is the schematic diagram of the structure of the cutter for substrate that one embodiment of the invention relate to.
Fig. 3 is the schematic diagram of the structure of the second processing department that one embodiment of the invention relate to.
Fig. 4 is the sectional view of the substrate cut principle that one embodiment of the invention relate to.
Fig. 5 is the main sectional view of the substrate cut process that one embodiment of the invention relate to.
Reference numeral:
10: substrate
100: worktable
200: laser portion
300: the first processing departments
310,320: lens working
400: the second processing departments
410: reflector
500: by product removing unit
BS: spectroscope
L1: the first laser beam
L2: the second laser beam
H1, H2: focal point
P1, P2: the first etched part
P3: the second etched part
A: illumination angle
Embodiment
Below, with reference to accompanying drawing with specific embodiments of the invention can be implemented describe the present invention in detail.In order to enable those skilled in the art to abundant enforcement, describe these embodiments in detail.Be interpreted as, various embodiment of the present invention is different from each other, but does not mutually repel.Such as, concrete shape, the structure and characteristics of an embodiment described here, without departing from the spirit and scope of the present invention, also can be realized by other embodiments.In addition, it will be appreciated that for, the position of the indivedual integrants separately in disclosed embodiment or configuration, also can change without departing from the spirit and scope of the present invention.Therefore, detailed description described later the meaning of indefinite, explain in precise term, protection scope of the present invention is only as the criterion with the content described in claims, comprises all scopes that the content advocated with its claim is equal to.In the accompanying drawings, similar Reference numeral represents same or similar function, represents its forms such as length, area, thickness for the ease of understanding also likely exaggeration.
Below, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, to make general technical staff of the technical field of the invention easy to implement.
In this manual, laser processing can be understood as laser radiation substrate and forms line, groove, pattern etc. or carry out the meaning of cutting object body.
With reference to Fig. 2, the cutter for substrate that one embodiment of the invention relate to can comprise worktable 100, laser portion 200, first processing department 300, second processing department 400 and spectroscope BS (beamsplitter).
Can substrate 10 be placed at worktable 100 and carry out substrate 10 cutting technique.Substrate 10 can be glass, semiconductor wafer etc.Particularly, preferable substrate 10 is transparent materials, so that laser beam L1, L2 can in substrate 10 internal focus.In addition, as the substrate for display unit etc., the thickness of preferable substrate 10 is below 2mm.In addition, as the large-area substrates for display unit etc., the length on a limit of preferable substrate 10 is 0.5m to 3.5m.
In addition, cutter for substrate of the present invention can also comprise worktable transferred unit (not shown) at worktable 100, worktable 100 is moved to x, y or z-axis direction, and laser portion 200, first processing department 300, second processing department 400 etc. are with stationary state configuration, to carry out substrate cut.Certainly, also can stationary work-table 100, and laser portion 200, first processing department 300, second processing department 400 etc. is moved to x, y or z-axis direction, to carry out substrate cut.But, for convenience of explanation, suppose that worktable 100 only moves to x-axis direction and the situation of carrying out substrate cut is described below.
Laser portion 200 is for generating laser beam L1, L2.As an example, YAG laser, diode laser, CO can be generated
2laser, excimer laser etc., and irradiate to spectroscope BS.
The pulse width of laser beam L1, L2 can be 100fs (femtosecond: femtosecond) to 1ns (nanosecond: nanosecond).Wherein, the picosecond laser bundle with the above pulse width of several psec is based on the photochemical reaction of non-thermal response, so have the characteristic can carrying out high-accuracy processing.The femtosecond laser beam with the above pulse width of several femtosecond can export 10 after amplification
12watt, i.e. terawatt (TW), any properties of materials can be processed so have.In addition, femtosecond laser beam does not need to gather effect on a point by laser focusing a to point also obtaining photon energy, can carry out high-accuracy processing.
In addition, in order to improve laser beam L1, L2 specific absorption on the substrate such as glass or semiconductor wafer 10, the wavelength of laser beam L1, L2 can be 100nm to 1100nm.
Spectroscope BS can be segmented in laser portion 200 and to generate and by the laser beam of spectroscope BS.Laser beam can be divided into the first laser beam L1 and the second laser beam L2.That is, the part of laser beam generated in the laser portion 200 mirror BS that is split reflects and directive first processing department 300, path before rest part keeps and directive second processing department 400.
The first laser beam L1 that first processing department 300 can utilize the mirror BS that is split to reflect, carries out line processing with the established part removing substrate 10 inside, thus forms the first etched part P1, P2.Now, relative to the first laser beam L1, worktable 100 can move to x-axis direction, to form first etched part P1, the P2 parallel with x-axis.First etched part P1, P2 can be understood as the space (such as cavity (cavity)) with roughly groove shape, and detailed content is aftermentioned with reference to Fig. 4 and Fig. 5.
First processing department 300 can comprise at least one lens working 310,320.Figure 2 illustrates two lens workings, but in cutter for substrate of the present invention, the quantity of lens working suitably can change according to the thickness of substrate 10, material etc.Usually, substrate 10 is thicker, material is harder, and the quantity of the lens working comprised in the first processing department 300 is more.Below, for convenience of explanation, supposition first processing department 300 as shown in Figure 2 comprises two lens workings 310,320 and is described.
Lens working 310,320 is the condenser lenses (focusinglens) that the first laser beam L1 can be focused on substrate 10 inside, and the f-number of each lens working can be different.By regulating the distance etc. of f-number, lens working 310,320 and substrate 10, each lens working can form focal point H1, H2 (that is, height different from each other) in the position different from each other of substrate 10 inside.Detailed item is aftermentioned.
Second processing department 400 can utilize the second laser beam L2 via spectroscope BS, carries out beam wobbling line processing to remove the established part of substrate 10 inside thus to form the second etched part P3.Now, relative to the second laser beam L2, worktable 100 can move to x-axis direction, to form the second etched part P3 parallel with x-axis.Second etched part P3 also can be understood as the space (such as cavity (cavity)) with roughly groove shape, and detailed content is aftermentioned with reference to Fig. 4 and Fig. 5.
Second processing department 400 can carry out cutting substrate 10 by the illumination angle A changing the second laser beam L2 irradiated substrate 10.That is, by changing illumination angle A, in the wide scope parallel with the first etched part P1, P2 on the substrate 10, preferably in the scope of 10mm to 300mm length, the second laser beam L2 can be irradiated back and forth to substrate 10 top, thus cutting substrate 10.
Fig. 3 is the schematic diagram of the structure that the second processing department 400 that one embodiment of the invention relate to is shown.
With reference to Fig. 3, can configure reflector 410 in the second processing department 400 inside, the path of this reflector 410 and the second laser beam L2 forms predetermined angular.Reflector 410 can link with the reflector control part (not shown) controlling illumination angle A, to make the second laser beam L2 directive substrate 10 inciding the second processing department 400.
Reflector control part can regulate the illumination angle A size of the second laser beam L2 by the move angle of accommodation reflex plate 410, thus controls the scope of the second laser beam L2 irradiated back and forth to form the second etched part P3 in substrate 10 inside.Figure 3 illustrates reflector 410 only forms linear pattern second etched part P3 situation with an axle motion, but reflector control part also can make reflector 410 carry out two axle movement and form the second etched part P3 with the apperance such as curve, circle.In addition, can be configured to, at the plural reflector 410 that the second processing department 400 internal configuration links each other, so that the second laser beam L2 inciding the second processing department 400 is reflected by multiple reflector 410, thus regulate the size of illumination angle A.In addition, can accommodation reflex plate 410 movement velocity be passed through, control the second laser beam L2 in the shuttle speed needing substrate 10 top of cutting.
Therefore, the illumination angle A size of accommodation reflex plate 410 or the pace of change of illumination angle A can be come, so the second processing department 400 irradiates the second laser beam L2 of first laser beam L1 wider scope than the first processing department 300 to substrate 10 top by reflector control part (not shown).
In addition, cutter for substrate of the present invention can also comprise by product removing unit 500.Line processing is carried out to substrate 100 or beam wobbling line adds man-hour, produce minuteness particle, by product such as processing fragment etc.Then become the underproof reason of substrate if these by products are residual, also make laser beam L1, L2 optically focused on the substrate 10 depart from the substrate 100, thus the bad situation of substrate cut occurs.Therefore, be provided with air intake unit in by product removing unit 500, to suck during substrate 10 is processed the by product produced, thus the reliability and stability of substrate cut technique can be improved.
Below, the first processing department 300 of the cutter for substrate that one embodiment of the invention relate to and the principle of the second processing department 400 cutting substrate 10 and process is described through.
Fig. 4 is the sectional view representing substrate 10 incision principle that one embodiment of the invention relate to.
With reference to Fig. 4, the first processing department 300 irradiates the first laser beam L1, to form focal point H1, H2 in substrate 10 inside.Such as, when utilization comprises the first processing department 300 of two lens workings 310,320, lens working 310 can form focal point H1 in the certain limit of substrate 10 inside, and lens working 320 forms focal point H2 in not overlapping with focal point H1 essence mode in the certain limit of substrate 10 inside.
Lens working 310 is after substrate 10 inside forms focal point H1, line processing is carried out to x-axis direction moving substrate 10, then, lens working 320, after the position higher than focal point H1 of substrate 10 inside forms focal point H2, carries out line processing to x-axis direction moving substrate 10.Certainly, lens working 310 and lens working 320 also can add man-hour carrying out line, formed only have focal point H1, H1 that z-axis direction height location is different and the level attitude in x-axis direction is identical in substrate 10 inside.
So, the first processing department 300 can be utilized to carry out line processing to remove substrate 10 internal rules part, thus form the first etched part P1, the P2 (Fig. 5) with roughly groove shape parallel with x-axis direction in substrate 10 inside.Now, the length of the first etched part P1, P2 is identical with the length essence in the x-axis direction of substrate 10, and the degree of depth of the first etched part P1, P2 is identical with the distance essence from substrate 10 lower surface to the regulation place of substrate 10 inside.In addition, save angle process period from the light gathering efficiency of the first laser beam L1 or line and consider, preferably the degree of depth of the first etched part P1, P2 is less than 500 μm.
After the line processing carrying out the first processing department 300, the second processing department 400 can be utilized to carry out beam wobbling line processing with the established part removing substrate 10 inside, thus form the second etched part P3 (Fig. 5) with roughly groove shape parallel with x-axis direction in substrate 10 inside.Now, the length of the second etched part P3 can be identical with the length essence in the x-axis direction of substrate 10, the degree of depth of the second etched part P3 with from substrate 10 upper surface to substrate 10 inside as illustrated in the first etched part P1, P2 forming process as described in specify that the distance essence in place is identical.
When the second etched part P3 formed by the second processing department 400 is connected with preformed first etched part P1, P2, realize substrate 10 and cut.
So, in the present invention, utilize in the wide scope in the second processing department 400 portion on the substrate 10 and irradiate the second laser beam L2 back and forth, so different from the first processing department 300, energy is assembled by spells on the focal point (not shown) of substrate 10 inside formation, therefore can not produce tiny crack equivalent damage when formation the second etched part P3 around it, thus the cutting quality of substrate 10 can be improved.
Fig. 5 is the main sectional view representing substrate 10 cutting process that one embodiment of the invention relate to.
With reference to (a) of Fig. 5, first, substrate 10 is placed on worktable 100.The laser beam mirror BS that is split generated in laser portion 200 is divided into the first laser beam L1 and the second laser beam L2.Then, with reference to (b) of Fig. 5, the first laser beam L1 that the mirror BS that is split reflects forms focal point H1 by lens working 310 in substrate 10 inside, and carries out line processing to x-axis direction, and its result forms the first etched part P1 in substrate 10 inside.Then, with reference to (c) of Fig. 5, the first laser beam L1 that the mirror BS that is split reflects forms focal point H2 by lens working 320 in substrate 10 inside, and carries out line processing to x-axis direction, and its result forms the first etched part P2 in substrate 10 inside.Then, with reference to (d) of Fig. 5, via the second laser beam L2 of spectroscope BS, carry out beam wobbling line processing to x-axis direction in portion on the substrate 10 by the second processing department 400, its result forms the second etched part P3 in substrate 10 inside.Second processing department 400 can continue to carry out beam wobbling line processing to x-axis direction, to form the second darker etched part P3.Then, with reference to (e) of Fig. 5, along with the depth down of formation second etched part P3, the first etched part P1, P2 connect with the second etched part P3, thus cutting substrate 10.
The present invention carrys out cutting substrate by adopting the line processing of the first processing department and the second processing department utilizing laser beam, thus has the advantage that can improve cutting substrate quality.
In addition, during cutting substrate, do not need tensile stress, so not only can the advantage of cutting ultra thin type substrate, and do not need the device of cooling base.
In addition, having can wide range illumination laser beam and carry out the second processing department of beam wobbling line processing, so can cut large-area substrates, has simultaneously and can improve cutting substrate quality, save the advantage of cutting substrate process time and cost.
As mentioned above, the present invention is illustrated by preferred embodiments and drawings, but be not limited to described embodiment, without departing from the scope of the subject in the invention, the technician with the general knowledge of the technical field of the invention can carry out various deformation and change.Will be understood that these variation and modification belong in the scope of the present invention and appended claim.
Claims (18)
1. a cutter for substrate, is characterized in that, comprising:
Worktable, for placing substrate;
Laser portion, for generating laser beam;
Spectroscope, is divided into the first laser beam and the second laser beam by described laser beam;
First processing department, utilizes described first laser beam to carry out line processing, to form the first etched part to described substrate inside; And
Second processing department, utilizes described second laser beam to carry out beam wobbling line processing to described substrate inside, to form the second etched part,
Described second processing department forms described second etched part by the angle changing substrate described in described second laser beam irradiation, and changed by the illumination angle of described second processing department, the second laser beam irradiation is 10mm to 300mm to the scope of described substrate.
2. cutter for substrate as claimed in claim 1, is characterized in that,
Described first processing department comprises at least one lens working.
3. cutter for substrate as claimed in claim 2, is characterized in that,
The different positions of lens working described in each in described substrate inside forms focal point.
4. cutter for substrate as claimed in claim 2, is characterized in that,
Described lens working carries out to described substrate inside the line processing that thickness is 10 μm to 500 μm.
5. cutter for substrate as claimed in claim 1, is characterized in that,
The thickness of described substrate is below 2mm, and the length on a limit of described substrate is 0.5m to 3.5m.
6. cutter for substrate as claimed in claim 1, is characterized in that,
Also comprise by product removing unit, the by product produced during for sucking processing described substrate.
7. cutter for substrate as claimed in claim 1, is characterized in that,
The wavelength of described laser beam is 100nm to 1100nm.
8. cutter for substrate as claimed in claim 1, is characterized in that,
The pulse width of described laser beam is 100fs to 1ns.
9. cutter for substrate as claimed in claim 1, is characterized in that,
The degree of depth of described first etched part is identical to the distance essence in the regulation place of described substrate inside with the lower surface from described substrate, and the degree of depth of described second etched part is identical to the distance essence in the described regulation place of described substrate inside with the upper surface from described substrate.
10. cutter for substrate as claimed in claim 1, is characterized in that,
Along with described first etched part connects with described second etched part, substrate is cut off.
11. 1 kinds of method for dividing substrate, is characterized in that,
Utilize the first processing department comprising at least one lens working, line processing is carried out to substrate inside the first laser beam, to form the first etched part,
Utilize the second processing department, carry out beam wobbling line processing to described substrate is inner with the second laser beam, to form the second etched part, thus cut described substrate,
Described second processing department forms described second etched part by the angle changing substrate described in described second laser beam irradiation, and the illumination angle according to described second processing department changes, and the second laser beam irradiation is 10mm to 300mm to the scope of described substrate.
12. method for dividing substrate as claimed in claim 11, is characterized in that,
The different positions of lens working described in each in described substrate inside forms focal point.
13. method for dividing substrate as claimed in claim 11, is characterized in that,
Described lens working carries out to described substrate inside the line processing that thickness is 10 μm to 500 μm.
14. method for dividing substrate as claimed in claim 11, is characterized in that,
The by product produced when processing described substrate, is sucked by by product removing unit.
15. method for dividing substrate as claimed in claim 11, is characterized in that,
The wavelength of described laser beam is 100nm to 1100nm.
16. method for dividing substrate as claimed in claim 11, is characterized in that,
The pulse width of described laser beam is 100fs to 1ns.
17. method for dividing substrate as claimed in claim 11, is characterized in that,
The thickness of described first etched part is the distance from the lower surface of described substrate to any point of described substrate inside, and the thickness of described second etched part is the distance of any point from described substrate inside to the upper surface of described substrate.
18. method for dividing substrate as claimed in claim 11, is characterized in that,
Along with described first etched part connects with described second etched part, substrate is cut off.
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020120050289A KR20130126287A (en) | 2012-05-11 | 2012-05-11 | Substrate cutting and method |
| KR10-2012-0050289 | 2012-05-11 |
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| KR101789185B1 (en) * | 2016-02-05 | 2017-10-23 | 주식회사 이오테크닉스 | Laser processing method using an angle of inclination of laser beam |
| CN106670645B (en) * | 2017-02-17 | 2018-09-11 | 京东方科技集团股份有限公司 | Laser processing device and laser processing method |
| CN107645841A (en) * | 2017-11-02 | 2018-01-30 | 惠州市特创电子科技有限公司 | Micro carving machine and its cutting method |
| KR102074737B1 (en) * | 2018-01-04 | 2020-02-07 | 주식회사 넵시스 | Cutting Apparatus using Laser Spot Beam |
| CN111451646A (en) * | 2020-04-24 | 2020-07-28 | 苏州镭明激光科技有限公司 | Processing technology for laser invisible cutting of wafer |
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| CN1386606A (en) * | 2001-05-21 | 2002-12-25 | 三星电子株式会社 | Method and device for cutting nonmetal substrate using laser beam |
| CN101138807A (en) * | 2007-10-16 | 2008-03-12 | 友达光电股份有限公司 | Cutting equipment and cutting manufacturing process |
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| JP2003119044A (en) * | 2001-10-12 | 2003-04-23 | Quantum Design Japan Inc | Machining method and machining device for quartz by laser |
| JP5560096B2 (en) * | 2010-05-28 | 2014-07-23 | 三星ダイヤモンド工業株式会社 | Laser processing method |
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| CN1386606A (en) * | 2001-05-21 | 2002-12-25 | 三星电子株式会社 | Method and device for cutting nonmetal substrate using laser beam |
| CN101138807A (en) * | 2007-10-16 | 2008-03-12 | 友达光电股份有限公司 | Cutting equipment and cutting manufacturing process |
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