TW201812877A - Substrate processing method and substrate processing device capable of preventing damage on a substrate caused by heat of a laser beam in advance - Google Patents
Substrate processing method and substrate processing device capable of preventing damage on a substrate caused by heat of a laser beam in advance Download PDFInfo
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- TW201812877A TW201812877A TW106104241A TW106104241A TW201812877A TW 201812877 A TW201812877 A TW 201812877A TW 106104241 A TW106104241 A TW 106104241A TW 106104241 A TW106104241 A TW 106104241A TW 201812877 A TW201812877 A TW 201812877A
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- 239000000758 substrate Substances 0.000 title claims abstract description 62
- 238000003672 processing method Methods 0.000 title description 7
- 238000000034 method Methods 0.000 claims description 12
- 239000007921 spray Substances 0.000 claims 1
- 238000005553 drilling Methods 0.000 abstract description 16
- 230000001678 irradiating effect Effects 0.000 abstract description 4
- 239000000428 dust Substances 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- Manufacturing & Machinery (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- High Energy & Nuclear Physics (AREA)
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Abstract
Description
本發明係關於一種對各種基板(例如、半導體晶圓(例如、矽晶圓))或其他之脆性材料基板(例如、玻璃基板、氧化鋁基板、藍寶石基板)等)使用雷射光源而進行鑽孔或切斷之加工之基板之加工方法及加工裝置。The present invention relates to a method for drilling various types of substrates (e.g., semiconductor wafers (e.g., silicon wafers)) or other brittle material substrates (e.g., glass substrates, alumina substrates, sapphire substrates, etc.) using laser light sources. Method and device for processing holes or cut substrates.
先前於在半導體晶圓上開孔時，係使用乾式蝕刻而於半導體晶圓進行鑽孔加工，或如專利文獻1所示般使用YAG(yttrium aluminum garnet:釔鋁石榴石)雷射進行開孔加工。又於專利文獻2提出有使用紫外線脈衝雷射而於半導體晶圓進行鑽孔加工之加工方法。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2002-239765號公報 [專利文獻2]日本專利特開2004-209541號公報Previously, when opening holes in semiconductor wafers, dry etching was used to drill holes in semiconductor wafers, or as shown in Patent Document 1, YAG (yttrium aluminum garnet) lasers were used to make holes. machining. Patent Document 2 also proposes a processing method for performing a drilling process on a semiconductor wafer using an ultraviolet pulse laser. [Prior Art Literature] [Patent Literature] [Patent Literature 1] Japanese Patent Laid-Open No. 2002-239765 [Patent Literature 2] Japanese Patent Laid-Open No. 2004-209541
[發明欲解決之課題] 然而於先前之雷射加工方法中，有必要於半導體晶圓等之基板設置多個孔，要求縮短鑽孔加工之工站時間(tact time)。 又於使用雷射光進行孔加工或切斷加工之情形時，根據條件而於基板表面附近溫度上升。且有因溫度上升而於加工部或其周邊部分產生裂縫或碎屑之情形。因此有難以於狹窄區域以短時間進行鑽孔加工之問題點。 本發明係鑒於此種先前之對於基板之加工方法之問題點而完成者，技術課題在於提供一種可解決因加工時之熱產生之問題點之基板之加工方法及加工裝置。 [解決課題之技術手段] 為了解決該課題，本發明之基板之加工方法係使用雷射光源者，且係將雷射光引導至上述基板，藉由掃描雷射光之照射位置而加工基板，且於上述雷射光之照射時藉由對基板之雷射光之照射位置噴出空氣而冷卻基板者。 為了解決該課題，本發明之基板之加工裝置係 具備：雷射光源；檢流計鏡，其使上述雷射光源之光於2軸方向變化；fθ透鏡，其使以上述檢流計鏡反射之光於基板上聚光；低溫空氣產生器；空氣噴嘴，其將來自上述低溫空氣產生器之低溫之空氣噴出至加工位置；及控制器，其控制上述檢流計鏡及上述低溫空氣產生器，將雷射光引導至基板並掃描雷射光，藉此加工上述基板，且於對上述基板照射雷射光之時點將來自上述低溫空氣產生器之低溫之空氣噴出至加工位置。 [發明之效果] 根據具有此等特徵之本發明，由於對照射雷射光之加工位置以鼓風噴出低溫之空氣，故獲得可抑制溫度之上升，且可抑制對基板之損傷之效果。又藉由噴出空氣而獲得可去除於加工時產生之粉塵之效果。[Problems to be Solved by the Invention] However, in the conventional laser processing method, it is necessary to provide a plurality of holes in a substrate of a semiconductor wafer or the like, and it is required to shorten a tact time of drilling processing. When laser processing is used for hole processing or cutting, the temperature increases near the substrate surface depending on the conditions. In addition, cracks or chips may be generated in the processing section or its peripheral parts due to temperature rise. Therefore, there is a problem that it is difficult to perform drilling in a narrow area in a short time. The present invention has been made in view of such a problem with a conventional method for processing a substrate, and a technical problem is to provide a method and a device for processing a substrate that can solve the problem due to heat generated during processing. [Technical means to solve the problem] In order to solve the problem, the substrate processing method of the present invention uses a laser light source, and guides the laser light to the substrate, processes the substrate by scanning the irradiation position of the laser light, and When the laser light is irradiated, the substrate is cooled by ejecting air to the irradiation position of the laser light on the substrate. In order to solve this problem, the substrate processing apparatus of the present invention includes a laser light source, a galvanometer mirror that changes the light of the laser light source in two directions, and an fθ lens that reflects the light from the galvanometer mirror. The light is focused on the substrate; a low-temperature air generator; an air nozzle that ejects the low-temperature air from the low-temperature air generator to a processing position; and a controller that controls the galvanometer mirror and the low-temperature air generator Guide the laser light to the substrate and scan the laser light to process the substrate, and when the substrate is irradiated with the laser light, the low-temperature air from the low-temperature air generator is ejected to the processing position. [Effects of the Invention] According to the present invention having these characteristics, since the low-temperature air is blown out by blowing air to the processing position where the laser light is irradiated, the effect of suppressing temperature rise and suppressing damage to the substrate is obtained. The effect of removing dust generated during processing is obtained by blowing out air.
其次一面參照圖式一面對本發明之實施形態進行說明。圖1係顯示使用於本發明之實施形態之雷射加工裝置之概略構成之圖。如本圖所示，雷射加工裝置10具有雷射光源11。將雷射光源11設為例如皮秒UV雷射、皮秒綠光雷射、CO2 雷射等可脈衝狀地照射雷射光之輸出可變型之光源。然後該雷射光源11之輸出係經由鏡面12a、12b、12c而引導至檢流計鏡13。檢流計鏡13係藉由於x軸方向及與其垂直之y軸方向微小地掃描雷射光源之1組鏡面13x、13y而構成，可基於來自控制器14之控制而於任意之方向掃描雷射光。將以檢流計鏡13反射之雷射光，經由fθ透鏡15而引導至基板20上。又fθ透鏡15係不論以檢流計鏡13決定之光路為何，均於基板20上垂直地照射雷射光，且以連結焦點之方式於基板上聚光者。基板20係配置於平台16上，平台16係保持於XY台板17上，可藉由XY台板17而於平台面上於二方向移動基板20。又雷射加工裝置10具有低溫空氣發生器18。低溫空氣發生器18係基於來自控制器14之控制而產生低溫空氣，於照射雷射光之時點對雷射光照射位置經由空氣噴嘴19而噴出經冷卻之空氣者。控制器14係如後述般控制檢流計鏡12與雷射光源11、XY台板17及低溫空氣發生器18，且以於基板20上照射雷射光而對基板進行加工之方式控制者。 低溫空氣發生器18使用例如將加工部之冷卻溫度設為10℃，可輸出50 L/分之低溫空氣之低溫空氣發生器。又將成為加工對象之基板20設為玻璃、氧化鋁、藍寶石等之基板或半導體晶圓。此處關於基板20，設為例如設置直徑數十 μm～1 mm之細微之多個孔者。 其次就使用本實施形態之雷射加工裝置之加工方法進行說明。首先對1個孔之鑽孔加工進行說明。鑽孔加工係藉以下之步驟S1～S3之步驟進行。圖2(a)、(b)係顯示成為加工對象之藍寶石基板20之一部分之鑽孔加工前後之剖視圖。圖3(a)～(c)係顯示加工中之剖面之圖。 首先於步驟S1中，如圖3(a)所示使雷射光對於基板20，以其表面為焦點且以垂直地成為特定之直徑之方式環狀地照射。此時如圖3所示以鑽孔之位置為中心，且以最大掃描半徑R11掃描而環狀地照射來自雷射光源之雷射光。其次以成為直徑稍小之R12之方式，以環狀地成為同心圓之方式照射雷射光。進而以將半徑依序減小作為R13、R14而同心圓狀地照射雷射光。若將其作為第1層L1，則可於第1層L1之照射結束後形成較淺之圓形之孔。繼而於第2層L2中亦與此同樣地以半徑R21、R22、R23、R24對同一位置依序減小雷射光之掃描半徑，以基板之孔之表面為焦點位置同心圓狀地照射而終止第1步驟S1。若該第1步驟S1之照射結束，則可如圖3(a)所示形成以最外周為斜面而大致同一深度之較淺之圓形之孔。 其次於步驟S2中，首先進行層L3之加工。於層L3中以如圖3(b)所示般作為與層L1、L2中心同等之同心圓，而以較步驟S1之最大掃描半徑R11稍小之最大掃描半徑R31，以基板之孔之表面為焦點位置而環狀地照射雷射光。其次以較最大掃描半徑R31稍小之掃描半徑R32同心圓狀地掃描。進而作為更小之掃描半徑R33而同心圓狀地照射雷射光。藉由如此掃描可於層L3中形成較以步驟S1形成之孔略深之孔。然後於層L4中亦以與此相同之半徑R41、R42、R43，於同一位置依序減小雷射光之掃描半徑，以基板之孔之表面為焦點位置而同心圓狀地重複。進而關於層L5亦與層L3同樣地，一面作為半徑R51、R52、R53而環狀依序減小雷射掃描半徑，一面以基板之孔之表面為焦點位置而照射雷射光。若結束該第2步驟S2之照射，則可如圖3(b)所示形成較圖3(a)稍微深之同心圓狀之孔。 其次於步驟S3中，如圖3(c)所示般，以與其前一次之同心圓中心同等且最大之直徑更小之第3步驟形成之基板之孔之表面為焦點位置，而同心圓狀地照射雷射光。於第3步驟中將半徑設為R61、R62。如此的話，若第三步驟結束，便可形成更深之孔21。 如此的話，則與步驟S1相比，由於在步驟S2、S3中依序逐漸減小最外周之雷射掃描半徑，故與將全部設為與步驟S1相同之掃描半徑之情形相比，可高速地結束對一個孔之雷射之掃描。 圖4係顯示該實施形態之鑽孔加工時之加工佈局之一例之圖。如本圖所示般將孔間隔設為例如300 μm，將孔徑設為50 μm，集中並開孔出縱橫合計25個孔者。於該情形時首先對25個孔進行第1步驟S1之加工。對該鑽孔加工時同時將以低溫空氣產生器18產生之低溫之空氣自空氣噴嘴19作為鼓風而噴出。如此可控制雷射照射時之溫度上升。繼而對全部之孔進行步驟S2之鑽孔處理。於該加工時亦同時如前述般將以低溫空氣產生器18產生之低溫之空氣作為鼓風而噴出。進而對全部之孔進行第3步驟S3之鑽孔加工。於該鑽孔加工時亦如上述般將以低溫空氣產生器18產生之低溫之空氣作為鼓風而噴出。如此可抑制加工區域之溫度上升，可獲得裂縫之抑制效果。又可藉由噴出空氣而減少於加工時產生之粉塵之附著。 圖5(a)係顯示於不進行藉由鼓風之冷卻之情形之各步驟之輸出之變化與裂縫之產生狀態之圖。此處顯示於步驟S1中使雷射光之輸出於1.2 W～2.4 W變化，與此對應而使於步驟S2、S3中雷射光之輸出於2 W～10 W變化之情形之裂縫產生狀況。若無藉由低溫空氣之噴出之冷卻，則無論步驟S1之雷射輸出位準為何，於第2、第3步驟之雷射輸出為10 W、8 W之情形時均產生裂縫。又於第1步驟S1之輸出為1.6 W以上之情形時若第2、第3步驟之輸出為6 W則裂縫產生。於第1步驟為2 W以上之情形時若第2、第3步驟之輸出為4 W則裂縫產生。 相對於此，如圖5(b)所示般併用鼓風之情形時，若第1步驟S1之輸出為1.6 W以下則於第2、第3步驟中8 W以下之情形時不會產生裂縫。因此可判斷有藉由鼓風之抑制效果。因此於不產生裂縫之範圍中可以較高之雷射輸出照射雷射光，可提高加工速度。 另於該實施形態中如圖3所示般以步驟S1～S3依序減小最大掃描半徑而同心圓狀地照射雷射光，但若為2個以上之步驟則可設為任意之次數。即使用第n(n為2以上之自然數)之步驟而於複數步驟Si(i=1～n)中依序使掃描半徑不同而照射雷射光，且可形成孔。又於各步驟中，亦可一面自最小之掃描半徑依序增大至最大掃描半徑一面掃描。 另於該實施形態中對使用基板之加工裝置之鑽孔加工進行說明，但本發明並不限於鑽孔加工，亦可應用於以使雷射光直線性移動之方式照射，切斷基板之情形。 [產業上之可利用性] 本發明可較好地應用於於藍寶石基板或半導體晶圓等基板上形成多個孔、切斷基板之雷射加工裝置。Next, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a diagram showing a schematic configuration of a laser processing apparatus used in an embodiment of the present invention. As shown in this figure, the laser processing apparatus 10 includes a laser light source 11. The laser light source 11 is, for example, a light source with a variable output capable of irradiating laser light in pulses, such as a picosecond UV laser, a picosecond green laser, and a CO 2 laser. The output of the laser light source 11 is then guided to the galvanometer mirror 13 via the mirror surfaces 12a, 12b, 12c. The galvanometer mirror 13 is formed by scanning a group of mirror surfaces 13x, 13y of the laser light source minutely by the x-axis direction and the y-axis direction perpendicular thereto. The laser light can be scanned in any direction based on the control from the controller 14. . The laser light reflected by the galvanometer mirror 13 is guided onto the substrate 20 through the fθ lens 15. The fθ lens 15 is a person who irradiates laser light vertically on the substrate 20 regardless of the optical path determined by the galvanometer mirror 13 and condenses the light on the substrate in a way that connects the focal points. The substrate 20 is disposed on the platform 16, and the platform 16 is held on the XY table 17. The substrate 20 can be moved in two directions on the platform by the XY table 17. The laser processing apparatus 10 includes a low-temperature air generator 18. The low-temperature air generator 18 generates low-temperature air based on the control from the controller 14 and ejects the cooled air to the laser light irradiation position through the air nozzle 19 when the laser light is irradiated. The controller 14 controls the galvanometer mirror 12 and the laser light source 11, the XY platen 17, and the low-temperature air generator 18 as described later, and controls the processing of the substrate by irradiating the substrate 20 with laser light. As the low-temperature air generator 18, for example, a low-temperature air generator capable of outputting low-temperature air at a temperature of 50 L / min is set to a cooling temperature of a processing section of 10 ° C. The substrate 20 to be processed is a substrate such as glass, alumina, sapphire, or a semiconductor wafer. Here, the substrate 20 is provided with, for example, fine holes having a diameter of several tens of μm to 1 mm. Next, a processing method using the laser processing apparatus of this embodiment will be described. First, the drilling of one hole will be described. Drilling is performed by the following steps S1 to S3. 2 (a) and 2 (b) are cross-sectional views before and after drilling of a part of the sapphire substrate 20 that is a target of processing. 3 (a) to (c) are diagrams showing a cross section during processing. First, in step S1, as shown in FIG. 3 (a), the laser light is irradiated to the substrate 20 in a ring shape with its surface as the focal point and a specific diameter vertically. At this time, as shown in FIG. 3, the position of the borehole is taken as the center, and the laser light from the laser light source is irradiated circularly while scanning with the maximum scanning radius R11. Secondly, the laser light is irradiated so as to become R12 having a slightly smaller diameter and to be concentric circles. Furthermore, the laser light is radiated concentrically in the order of decreasing the radius as R13 and R14. If it is used as the first layer L1, a shallower circular hole can be formed after the irradiation of the first layer L1 is completed. In the second layer L2, the radius R21, R22, R23, and R24 are used to sequentially reduce the scanning radius of the laser light at the same position in the same way. The surface of the hole on the substrate is used as the focal point to concentrically irradiate and terminate. First step S1. When the irradiation in the first step S1 is completed, as shown in FIG. 3 (a), a relatively shallow circular hole having the outermost periphery as the inclined surface and approximately the same depth can be formed. Next, in step S2, the processing of the layer L3 is performed first. In layer L3, as shown in FIG. 3 (b), the same concentric circle as the center of layers L1 and L2 is used, and the maximum scanning radius R31 which is slightly smaller than the maximum scanning radius R11 of step S1 is used as the surface of the substrate hole The laser light is irradiated in a ring shape for the focal position. Next, scanning is performed concentrically with a scanning radius R32 slightly smaller than the maximum scanning radius R31. Furthermore, laser light is radiated concentrically as a smaller scanning radius R33. By this scanning, a hole slightly deeper than the hole formed in step S1 can be formed in the layer L3. Then, the same radius R41, R42, and R43 are used in the layer L4, and the scanning radius of the laser light is sequentially reduced at the same position, and repeated concentrically with the surface of the hole of the substrate as the focal position. Furthermore, as for the layer L5, similarly to the layer L3, the laser scanning radius is sequentially reduced in a ring shape as the radius R51, R52, and R53, and the laser light is irradiated with the surface of the substrate hole as the focal position. When the irradiation of the second step S2 is completed, as shown in FIG. 3 (b), a concentric circular hole slightly deeper than that in FIG. 3 (a) can be formed. Secondly, in step S3, as shown in FIG. 3 (c), the surface of the hole of the substrate formed in the third step which is the same as the center of the previous concentric circle and has a smaller maximum diameter is taken as the focal position, and the concentric circle shape The ground radiates laser light. In the third step, the radii are set to R61 and R62. In this case, if the third step is completed, a deeper hole 21 can be formed. In this case, compared with step S1, since the laser scanning radius of the outermost periphery is gradually decreased in order in steps S2 and S3, it is possible to achieve a high speed compared with the case where all are set to the same scanning radius as step S1. The ground ended the laser scan of a hole. FIG. 4 is a diagram showing an example of a processing layout during drilling processing in this embodiment. As shown in this figure, the hole interval is set to, for example, 300 μm, the hole diameter is set to 50 μm, and the holes are concentrated and opened to form a total of 25 holes. In this case, the first step S1 is performed on 25 holes. At the same time, the low-temperature air generated by the low-temperature air generator 18 is blown out from the air nozzle 19 during the drilling process. This can control the temperature rise during laser irradiation. Then, the drilling process of step S2 is performed on all the holes. At the same time, the low-temperature air generated by the low-temperature air generator 18 is blown out during the processing as described above. Furthermore, the drilling of the third step S3 is performed on all the holes. During the drilling process, as described above, the low-temperature air generated by the low-temperature air generator 18 is blown out. In this way, it is possible to suppress the temperature rise in the processing area and obtain the effect of suppressing cracks. It can also reduce the adhesion of dust generated during processing by spraying air. Fig. 5 (a) is a diagram showing the change in output and the state of occurrence of cracks in each step in the case where cooling by blast is not performed. Here, the occurrence of cracks in the case where the output of the laser light is changed from 1.2 W to 2.4 W in step S1 and the output of the laser light is changed from 2 W to 10 W in steps S2 and S3 is shown. If there is no cooling by the ejection of low-temperature air, no matter what the laser output level of step S1 is, cracks will occur when the laser output of steps 2 and 3 is 10 W and 8 W. In the case where the output in the first step S1 is 1.6 W or more, if the output in the second and third steps is 6 W, cracks occur. In the case where the first step is 2 W or more, if the output of the second and third steps is 4 W, cracks occur. On the other hand, when the blower is used in combination as shown in FIG. 5 (b), if the output of step S1 is 1.6 W or less, no crack will occur in the case of 8 W or less in the second and third steps . Therefore, it can be judged that the suppression effect by the blast is present. Therefore, in the range where no cracks are generated, laser light can be irradiated at a higher laser output, which can increase the processing speed. In this embodiment, as shown in FIG. 3, steps S1 to S3 are used to sequentially reduce the maximum scanning radius and radiate laser light concentrically. However, if the number of steps is two or more, the laser light may be arbitrarily selected. That is, the nth (n is a natural number of 2 or more) step is used to sequentially irradiate laser light with different scanning radii in the plural steps Si (i = 1 to n), and holes can be formed. In each step, scanning can also be performed while sequentially increasing from the smallest scanning radius to the largest scanning radius. In this embodiment, drilling processing using a substrate processing apparatus is described. However, the present invention is not limited to drilling processing, and can also be applied to a case where the substrate is cut by irradiating the laser light in a linear manner. [Industrial Applicability] The present invention can be suitably applied to a laser processing device for forming a plurality of holes on a substrate such as a sapphire substrate or a semiconductor wafer and cutting the substrate.
10‧‧‧雷射加工裝置10‧‧‧laser processing equipment
11‧‧‧雷射光源11‧‧‧laser light source
12a‧‧‧鏡面12a‧‧‧Mirror
12b‧‧‧鏡面12b‧‧‧Mirror
12c‧‧‧鏡面12c‧‧‧Mirror
13‧‧‧檢流計鏡13‧‧‧ Galvanometer mirror
13x‧‧‧鏡面13x‧‧‧Mirror
13y‧‧‧鏡面13y‧‧‧Mirror
14‧‧‧控制器14‧‧‧Controller
15‧‧‧fθ透鏡15‧‧‧fθ lens
16‧‧‧平台16‧‧‧ platform
17‧‧‧XY台板17‧‧‧XY table
18‧‧‧低溫空氣產生器18‧‧‧ low temperature air generator
19‧‧‧空氣噴嘴19‧‧‧air nozzle
20‧‧‧基板20‧‧‧ substrate
21‧‧‧孔21‧‧‧hole
R11‧‧‧掃描半徑R11‧‧‧scan radius
R12‧‧‧掃描半徑R12‧‧‧scan radius
R13‧‧‧掃描半徑R13‧‧‧scan radius
R14‧‧‧掃描半徑R14‧‧‧scan radius
R31‧‧‧掃描半徑R31‧‧‧scan radius
R32‧‧‧掃描半徑R32‧‧‧scan radius
R33‧‧‧掃描半徑R33‧‧‧Scan Radius
R61‧‧‧掃描半徑R61‧‧‧scan radius
R62‧‧‧掃描半徑R62‧‧‧scan radius
圖1係顯示本發明之實施形態之雷射加工裝置之概略構成之圖。 圖2(a)、(b)係顯示本實施形態之雷射加工前後之基板之一部分之剖視圖。 圖3(a)-(c)係顯示本實施形態之雷射加工方法之加工步驟之圖。 圖4係顯示本實施形態之雷射加工之加工佈局之一例之概略圖。 圖5(a)、(b)係顯示本實施形態之加工方法之各步驟之輸出與有無裂縫發生之一例之圖。FIG. 1 is a diagram showing a schematic configuration of a laser processing apparatus according to an embodiment of the present invention. 2 (a) and 2 (b) are sectional views showing a part of a substrate before and after laser processing according to this embodiment. 3 (a)-(c) are diagrams showing the processing steps of the laser processing method of this embodiment. FIG. 4 is a schematic diagram showing an example of a processing layout of laser processing in this embodiment. 5 (a) and 5 (b) are diagrams showing an example of the output of each step of the processing method of the present embodiment and the presence or absence of cracks.
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| JP??2016-129979 | 2016-06-30 | ||
| JP2016129979A JP2018006509A (en) | 2016-06-30 | 2016-06-30 | Processing method of substrate and processing device |
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| TW201812877A true TW201812877A (en) | 2018-04-01 |
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| CN111331262B (en) * | 2020-03-23 | 2021-12-24 | 广州兴森快捷电路科技有限公司 | Packaging carrier plate and method for processing inner groove of metal cavity |
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| JP5805008B2 (en) * | 2012-05-21 | 2015-11-04 | 三菱電機株式会社 | Laser processing machine for glass fine hole processing and glass fine hole processing method |
| JP5994723B2 (en) * | 2013-05-09 | 2016-09-21 | トヨタ自動車株式会社 | Laser drilling method and apparatus |
| CN203390389U (en) * | 2013-07-16 | 2014-01-15 | 桂林电子科技大学 | System for etching fragile material ultrathin sheet with water jet and laser |
-
2016
- 2016-06-30 JP JP2016129979A patent/JP2018006509A/en active Pending
-
2017
- 2017-02-09 TW TW106104241A patent/TW201812877A/en unknown
- 2017-02-28 CN CN201710115492.2A patent/CN107570894A/en active Pending
- 2017-03-06 KR KR1020170028059A patent/KR20180003407A/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20180003407A (en) | 2018-01-09 |
| CN107570894A (en) | 2018-01-12 |
| JP2018006509A (en) | 2018-01-11 |
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