CN105436712B - The fragility splinter method and system of a kind of brittle semiconductor materials - Google Patents
The fragility splinter method and system of a kind of brittle semiconductor materials Download PDFInfo
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- CN105436712B CN105436712B CN201510896233.9A CN201510896233A CN105436712B CN 105436712 B CN105436712 B CN 105436712B CN 201510896233 A CN201510896233 A CN 201510896233A CN 105436712 B CN105436712 B CN 105436712B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 229
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- 238000010438 heat treatment Methods 0.000 claims abstract description 130
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- 239000012809 cooling fluid Substances 0.000 claims description 57
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention discloses the fragility splinter method and system of a kind of brittle semiconductor materials, methods described includes：Sliver part interior, which quickly heats, to be treated to brittle semiconductor materials using heating laser beam, so that brittle semiconductor materials treat that sliver part interior expands to form compression, sliver portion faces, which are quickly cooled down, to be treated to brittle semiconductor materials simultaneously, so that brittle semiconductor materials treat that sliver portion faces shrink to form tension, so that brittle fracture occurs for brittle semiconductor materials, smooth incisions are formed.Pass through the present invention, ideally brittle semiconductor materials sliver can be processed, relative to the processing mode of traditional brittle semiconductor materials, high kerf quality can be obtained, the bending strength of brittle semiconductor materials is maintained, improves the sliver efficiency of brittle semiconductor materials.
Description
Technical field
The present invention relates to technical field of laser processing, and in particular to a kind of fragility splinter method of brittle semiconductor materials and
System.
Background technology
Brittle fracture and the difference of ductile rupture are mainly that judgment basis is exactly " before fracture come what is divided from gross feature
Either with or without the obvious plastic deformation of generation ".Brittle fracture is nearly free from plastic deformation, the smooth stretching of general provision before fracturing
The contraction percentage of area of sample belongs to brittle fracture when being less than 5%, fracture smooth, there is metallic luster, and vertical with direct stress.
Ductile rupture occurs significantly to be plastically deformed before fracturing, and with plastic deformation and energy absorption, workpiece configurations are in constriction, bending
And section shrinkage.
Brittle semiconductor materials, so that Silicon Wafer is cut as an example, main flow cutting technique is still cut using diamond blade, this
There is the shortcomings of cutting slit width is wider, and cutting efficiency is low, and consumables cost is higher in kind cutting mode, therefore be cut by laser wafer and answer
Mainstream technology should be turned into, but due to that can leave laser cutting texture during laser cutting Silicon Wafer or perhaps be cut by laser trace
Mark, a large amount of micro-cracks and stress concentration have been hidden in fact below these vestiges, also with certain roughness, over time
Passage, these crackles are gradually expanded among the circuit of chip, cause chip rejection.Using 3 points of tests or 4 points in engineering
Method of testing, after measurement fragile material is cut by laser, whether the bending strength of the fragile material after cutting declines and reduces
How much, in general laser cutting method, because Cutting texture causes the presence of numerous micro-cracks, cause the fragility after laser cutting
Semi-conducting material bending strength drastically reduces, and have impact on the follow-up use of brittle semiconductor materials.
The content of the invention
The technical problems to be solved by the invention are to provide the fragility splinter method and system of a kind of brittle semiconductor materials,
The break notches of high quality can be obtained, keep the original bending strength of brittle semiconductor materials, eliminate stress concentration micro-crack,
Realize brittle semiconductor materials high-speed high-quality amount sliver.
The technical scheme that the present invention solves above-mentioned technical problem is as follows：
On the one hand, the invention provides a kind of fragility splinter method of brittle semiconductor materials, including：
Sliver part interior, which quickly heats, to be treated to brittle semiconductor materials using heating laser beam, so that brittle semiconductor
Material treats that sliver part interior expands to form compression, while treats that sliver portion faces are carried out soon to brittle semiconductor materials
Quickly cooling but so that brittle semiconductor materials treat that sliver portion faces shrink to form tension, so that brittle semiconductor material
Brittle fracture occurs for material, forms smooth incisions；Wherein, the brittle semiconductor materials it is transparent to the heating laser beam optics or
Person's partial optical is transparent, so that the heating laser beam can enter inside the brittle semiconductor materials so that the fragility
Semi-conducting material treats that sliver part interior can absorb laser energy so as to form temperature rise, meanwhile, the brittle semiconductor material
Material treats that sliver part interior is heated temperature and is less than the brittle semiconductor materials plastic deformation temperature.
Absorption of the brittle semiconductor materials to heating laser beam can be brittle semiconductor materials in itself to a standing wave
Long laser be it is partially transparent partially absorb or brittle semiconductor materials are in itself transparent to certain wavelength laser, but
It is due to that laser spot power density is higher after heating laser beam focuses on so that script brittle semiconductor materials are to the wavelength laser
It is transparent to switch to absorb.
Beneficial effects of the present invention are：Sliver part interior is quick to be treated to brittle semiconductor materials using heating laser beam
Heating, so that brittle semiconductor materials treat that sliver part interior expands to form compression, while to brittle semiconductor materials
Treat that sliver portion faces are quickly cooled down, so that brittle semiconductor materials treat that sliver portion faces shrink to form tension,
So that brittle fracture occurs for brittle semiconductor materials, smooth incisions are formed, ideally brittle semiconductor materials can be split
Piece is processed, and relative to the processing mode of traditional brittle semiconductor materials, can obtain high kerf quality, maintains fragility half
The bending strength of conductor material, micro-crack and stress concentration caused by eliminating conventional laser cutting, improves brittle semiconductor material
The sliver efficiency of material.
On the basis of above-mentioned technical proposal, it can also improve as follows.
Further, the laser beam is to focus on laser beam, and the Laser Focusing focus position of the heating laser beam
Sliver part interior is treated in the brittle semiconductor materials, the Laser Focusing focus of the heating laser beam focuses on light for flat-top
Spot.
Further, the flat-top focal beam spot is square flat-top focal beam spot or circular flat focal beam spot.
It is described further to have the beneficial effect that：Be advantageous to the uniform of brittle semiconductor materials using flat-top focal beam spot to add
Heat, and flat-top focal beam spot is relatively deep shorter, the superheated on brittle semiconductor materials surface is avoided, for brittle semiconductor material
The straight line path sliver of material, proper using square flat-top focal beam spot, so heating is more uniformly distributed；For brittle semiconductor
Material curves path sliver, it is proper using circular flat focal beam spot, it is adapted to control fragility half using flat-top focal beam spot
The sliver direction of conductor material.
Further, treating sliver part interior quickly before heating brittle semiconductor materials using heating laser beam
Or also include simultaneously：
Heating laser beam described in the brittle semiconductor materials surface barrier is removed to wait to split into brittle semiconductor materials
The isolated material of piece part interior, the isolated material include metal with it is nonmetallic.
It is described further to have the beneficial effect that：The isolated material on brittle semiconductor materials surface is removed, is advantageous to heating and swashs
Light beam, which enters inside brittle semiconductor materials, quickly to be heated.On the other hand, the invention provides a kind of brittle semiconductor material
The fragility lobe system of material, including heating module and refrigerating module；
The heating module treats that sliver part interior quickly heats using heating laser beam to brittle semiconductor materials, with
Make brittle semiconductor materials treats that sliver part interior expands to form compression；The refrigerating module is to brittle semiconductor material simultaneously
Material treat that sliver portion faces are quickly cooled down so that brittle semiconductor materials treat sliver portion faces shrink to be formed drawing answer
Power, so that brittle fracture occurs for brittle semiconductor materials, form smooth incisions；Wherein, the brittle semiconductor materials pair
The heating laser beam optics is transparent or partial optical is transparent, so that the heating laser beam can partly be led into the fragility
Body material internal so that the brittle semiconductor materials treat that sliver part interior can absorb laser energy so as to form temperature
Rise, meanwhile, the brittle semiconductor materials treat that sliver part interior is heated temperature and is less than the brittle semiconductor materials plasticity
Deformation temperature.
Beneficial effects of the present invention are：Sliver part interior, which quickly adds, to be treated to brittle semiconductor materials using heating module
Heat, so that brittle semiconductor materials treat that sliver part interior expands to form compression, while using refrigerating module to fragility half
Conductor material treats that sliver portion faces are quickly cooled down, so that brittle semiconductor materials treat that sliver portion faces shrink shape
Into tension, so that brittle fracture occurs for brittle semiconductor materials, smooth incisions are formed, ideally fragility partly can be led
Body material sliver is processed, and relative to the processing mode of traditional brittle semiconductor materials, can obtain high kerf quality, is tieed up
The bending strength of brittle semiconductor materials is held, micro-crack and stress concentration caused by eliminating conventional laser cutting, improves fragility
The sliver efficiency of semi-conducting material.
On the basis of above-mentioned technical proposal, it can also improve as follows.
Further, the refrigerating module is treated using cooling fluid beam or low temperature loading platform to brittle semiconductor materials
Sliver portion faces are quickly cooled down.
Further, the cooling fluid beam be liquid low temperature inert gas or gaseous state cryogenic inert gas, Cryogenic air,
One or more kinds of combinations in liquid carbon dioxide or cryogenic carbon dioxide gas, liquid nitrogen or low temperature nitrogen.
Further, in addition to beam shaping element and Laser Focusing module；
The beam shaping element, for carrying out beam shaping to the laser beam launched by laser；
The Laser Focusing module, for being focused to the laser beam after shaping, form heating laser beam, the heating
The focused spot of laser beam is flat-top focal beam spot.
It is described further to have the beneficial effect that：Be advantageous to the uniform of brittle semiconductor materials using flat-top focal beam spot to add
Heat, and flat-top focal beam spot is relatively deep shorter, avoids the superheated on brittle semiconductor materials surface, improves to brittle semiconductor
Cooling effect when material surface cools down.
Further, the Laser Focusing module includes laser focusing lens module and the cooling fluid beam being disposed below
Chamber, and the cooling fluid beam chamber is additionally provided with cooling fluid beam entrance and the outlet of cooling fluid beam.
Further, in addition to：
Cleaning module, for removing the brittle semiconductor materials surface using cleaning laser beam or mechanical lapping equipment
Stop that the heating laser beam enters the isolated material for treating sliver part interior of brittle semiconductor materials.
It is described further to have the beneficial effect that：The isolated material on brittle semiconductor materials surface is removed, is advantageous to heating and swashs
Light beam, which enters inside brittle semiconductor materials, quickly to be heated.
Further, the cleaning laser beam goes out optical mode with the difference of the heating laser beam from same LASER Light Source
Or from different LASER Light Sources；
It is described when the cleaning laser beam goes out optical mode with the difference of the heating laser beam from same LASER Light Source
Heating laser beam is continuous laser or low peak power pulse laser beam, and the cleaning laser beam is pulse laser beam；
When it is described cleaning laser beam from heating laser beam from different LASER Light Sources when, it is described cleaning laser beam be it is ultrashort
Pulse laser beam.
Brief description of the drawings
Fig. 1-a be the embodiment of the present invention 1 in a kind of brittle semiconductor materials fragility splinter method in heating laser beam with
Cooling fluid beam is located at the same face and coaxial schematic diagram；
Fig. 1-b are that heating laser beam is located at the not coaxial schematic diagram of the same face with cooling fluid beam in embodiment 1；
Fig. 2-a are that heating laser beam is located at the coaxial schematic diagram of different faces with cooling fluid beam in embodiment 1；
Fig. 2-b are that heating laser beam is located at different faces and not coaxial schematic diagram with cooling fluid beam in embodiment 2；
Fig. 3-a be the embodiment of the present invention 2 a kind of brittle semiconductor materials fragility lobe system in heating laser beam with
The coaxial schematic diagram of cooling fluid beam；
Fig. 3-b are heating laser beam and the not coaxial schematic diagram of cooling fluid beam in embodiment 2.
In accompanying drawing, the label of each part is as follows：
1st, cooling fluid beam, 2, heating laser beam, 3, brittle semiconductor materials, 31, treat sliver portion faces, 32, wait to split
Piece part interior, 4, laser, 5, first laser beam, 6, optical shaping element, 7, second laser beam, 8, Laser Focusing module,
81st, laser focusing lens module, 82, cooling fluid beam chamber, 83, cooling fluid beam entrance.
Embodiment
The principle and feature of the present invention are described below in conjunction with accompanying drawing, the given examples are served only to explain the present invention, and
It is non-to be used to limit the scope of the present invention.
The fragility splinter method of embodiment 1, a kind of brittle semiconductor materials.Below in conjunction with Fig. 1-a to Fig. 2-b to this implementation
The method that example provides is described in detail.
Referring to shown in Fig. 1-a and Fig. 1-b, the method that the present embodiment provides includes:Fragility is partly led using heating laser beam
Body material treats that sliver part interior quickly heats so that brittle semiconductor materials treat sliver part interior expand to be formed pressure should
Power, while sliver portion faces, which are quickly cooled down, to be treated to brittle semiconductor materials, so that brittle semiconductor materials are waited to split
Piece portion faces shrink to form tension, so that brittle fracture occurs for brittle semiconductor materials, form smooth incisions.Its
In, the brittle semiconductor materials are transparent to the heating laser beam optics or partial optical is transparent, so that the heating swashs
Light beam can enter inside the brittle semiconductor materials so that the brittle semiconductor materials treat that sliver part interior can
Laser energy is absorbed so as to form temperature rise, meanwhile, the brittle semiconductor materials treat that the heated temperature of sliver part interior is low
In the brittle semiconductor materials plastic deformation temperature, to ensure that the inside for treating sliver position of brittle semiconductor materials is quickly heated
After elastic deformation occurs, but plastic deformation does not occur.
It should be noted that to brittle semiconductor materials treat process that sliver part interior quickly heats with to fragility half
Order, two processes can also be entered the process that the surface for treating sliver position of conductor material is quickly cooled down simultaneously in no particular order
OK.
Wherein, the brittle semiconductor materials include crystal silicon chip, heating laser beam of the crystal silicon chip for part wavelength
It is that Journalistic partially absorbs, the wavelength of these heating laser beams is 800 nanometers to 9 microns.Brittle semiconductor materials pair add
The absorption of heat shock light beam, can be brittle semiconductor materials be to the wavelength laser in itself it is partially transparent partially absorb, also may be used
To be that brittle semiconductor materials are in itself transparent to the wavelength laser, but laser after being focused on due to the heating laser beam
Focus power density is higher so that script brittle semiconductor materials are transparent to the wavelength laser to be switched to absorb.Crystal silicon chip part
The laser beam of transmission treats being internally heated for sliver position to crystal silicon chip, and this implements the heating laser beam parameter tool of selection
Body is：Continuous laser, wavelength 1064nm, 50 watts of laser power, beam quality factor are less than 1.1, and the laser beam 2 focuses on light
20 microns of spot.The heating laser beam is focuses on laser beam, and the Laser Focusing focus of the heating laser beam is positioned at described crisp
Property semi-conducting material treats sliver part interior, and the Laser Focusing focus of the heating laser beam is flat-top focal beam spot, described
Flat-top focal beam spot is square flat-top focal beam spot or circular flat focal beam spot.In addition, the fragility described in the present embodiment
Semi-conducting material is not limited to silicon materials, also including but not limited to GaAs (GaAs), gallium nitride (GaN), cadmium telluride (CdTe), selenium
Change zinc (ZnSe), sapphire material, part ceramic material etc., when brittle semiconductor materials are sapphire material, heating laser
Between the wavelength of beam is 355 nanometers to 10.6 microns, sapphire material is to the heating laser beam of this wave-length coverage, some suctions
Receive, have plenty of it is partially transparent partially absorb, have plenty of it is transparent, for transparent heating laser beam, because heating laser beam gathers
Defocused laser spot power density is higher so that the material is transparent to the wavelength laser originally switchs to absorb.
When the brittle semiconductor materials of the present embodiment are Silicon Wafer, Silicon Wafer is eight inch diameter Silicon Wafers, thickness 300
Micron.It is well known that although Si materials are extremely brittle at room temperature, when it reaches more than 60% (about 740 DEG C) of melting temperature
When there is toughness.When the non-uniform heat flux that silicon wafer is subject to produce very big thermograde in silicon chip, correspondingly produce
Very big thermal stress, when stress exceedes the yield strength of silicon, diffusion induced defects will produce.Crystalline silicon fusing point about 1400
Degree, about 2377 degree of boiling point, crystalline silicon belongs to fragile material, when temperature is more than about 510 degree, starts to convert from fragility to plasticity,
When temperature is more than about 650 degree, silicon chip produces good plasticity.The modulus of elasticity of monocrystalline silicon is about 187GPa, and fracture toughness is big
It is approximately 0.82MPa, threshold yield intensity is 2 × 106g/cm2, i.e. 196Mpa.
Silicon Wafer treats sliver region surface tension, has following equation according to mechanics of materials thermal stress principle：
σ=E (- ⊿ L/L)=Ea (T-To),
Wherein (T-To) is the surface for treating sliver position of brittle semiconductor materials and the internal temperature difference；A is thermal expansion system
Number, silicon materials normal temperature thermal coefficient of expansion are 2.5*10-6/ degrees Celsius, and actual as temperature rises, its thermal coefficient of expansion also rises,
This formula calculates to be calculated according to conservative normal temperature thermal coefficient of expansion；E is crystalline silicon modulus of elasticity.
Temperature after the cooled fluid beam cooling of the surface region of the brittle semiconductor materials is zero degrees celsius, described crisp
Property semi-conducting material interior zone be heated laser beam heats after 450 degrees Celsius of temperature, (T-To)=450 degree Celsius, a
=2.5*10-6/ degrees Celsius, E=187GPa, treat that sliver region surface tension is 210Mpa by calculating Silicon Wafer, more than silicon
Wafer threshold yield intensity 196Mpa, can essentially further reduce the temperature difference that Silicon Wafer treats sliver region ectonexine so that
Sliver technological parameter is more broad.
Specifically, cooling fluid beam or low temperature loading platform can be used to treat that sliver surface is carried out to brittle semiconductor materials
Quick cooling.It is cold when quickly being cooled down to the surface when sliver position of brittle semiconductor materials using cooling fluid beam
But fluid beam can be liquid either gaseous state cryogenic inert gas, Cryogenic air, liquid carbon dioxide or low-temperature carbon dioxide
The either one or more kinds of combinations in low temperature nitrogen, liquified hydrogen or low temperature hydrogen of gas, liquid nitrogen.The present embodiment employs low
Warm nitrogen, gas flow rate are 5 liters/min, and above-mentioned low temperature refers to be less than 5 DEG C.When use low temperature loading platform is to brittle semiconductor
When the surface of material is quickly cooled down, brittle semiconductor materials are positioned on low temperature loading platform.
Brittle semiconductor materials when sliver portion faces are quickly cooled down, can be distinguished when using cooling fluid beam
It can be located at brittle semiconductor with cooling fluid beam referring to Fig. 1-a and Fig. 2-a or referring to Fig. 1-b and Fig. 2-b, heating laser beam
The same face for treating sliver position of material, the two sides for treating sliver position of brittle semiconductor materials can also be located at.It can also divide
Not referring to Fig. 1-a and Fig. 1-b or referring to Fig. 2-a and Fig. 2-b, heating laser beam and cooling fluid beam can be coaxial, can also
It is not coaxial.
Cooling fluid beam moves with heating laser beam relative to brittle semiconductor materials spatial synchronization to be processed, and control is crisp
Property semi-conducting material brittle fracture track, realize the processing of perfect brittle semiconductor materials sliver jointly.
In addition, the gap the inside between some materials, such as the chip of silicon wafer surface, it is non-to be frequently present of some metal goods
Metal residual, these metals or nonmetallic barrier heating laser beam are transferred to inside Silicon Wafer, it is therefore desirable to by these
Metal residual is purged.The present embodiment is treating that sliver part interior is quick using heating laser beam to brittle semiconductor materials
Also include before or while heating：Heating laser beam described in removing the brittle semiconductor materials surface barrier is partly led into fragility
The isolated material for treating sliver part interior of body material, so that heating laser beam can be smoothly into the interior of brittle semiconductor materials
Quickly heated in portion.In the present embodiment, cleaning laser beam or mechanical lapping equipment can be used to remove brittle semiconductor materials
Heating laser beam described in surface barrier enters the isolated material for treating sliver part interior of brittle semiconductor materials.When using cleaning
During laser beam, the difference that cleaning laser beam can come from same LASER Light Source with heating laser beam goes out optical mode, can be from
Different LASER Light Sources.When cleaning laser beam and difference of the heating laser beam from same LASER Light Source goes out optical mode, heating
Laser beam can be continuous laser or low peak power pulse laser, its peak power using do not destroy brittle semiconductor materials as
Standard, cleaning laser beam are pulse laser beam；When clean laser beam from heating laser beam from different LASER Light Sources when, heating is sharp
Light beam can be continuous laser or low peak power pulse laser, and cleaning laser beam can be ultra-short pulse laser beam, its arteries and veins
Width is rushed less than 1 nanometer.The material of residual in heating laser beam path is removed, it is necessary to the relatively high laser beam progress of peak power
Processing is removed.
The fragility lobe system of embodiment 2, a kind of brittle semiconductor materials.Below in conjunction with Fig. 3-a and Fig. 3-b to this implementation
The system that example provides is described.
Referring to shown in Fig. 3-a, the system that the present embodiment provides includes heating module and refrigerating module, wherein, the heating
Module treats that sliver part interior 32 quickly heats using heating laser beam 2 to brittle semiconductor materials 3, so that brittle semiconductor
Material treats that the expansion of sliver part interior 3 forms compression；The refrigerating module treats sliver to brittle semiconductor materials 3 simultaneously
Portion faces 31 are quickly cooled down, so that brittle semiconductor materials 3 treat that the contraction of sliver portion faces 31 forms tension, from
And make it that brittle fracture occurs for brittle semiconductor materials 3, form smooth incisions；Wherein, the brittle semiconductor materials 3 are to described
The optical clear of heating laser beam 2 or partial optical are transparent, so that the heating laser beam 2 can enter the brittle semiconductor
Inside material 3 so that the brittle semiconductor materials 3 treat that sliver part interior 32 can absorb laser energy so as to form temperature
Rise, meanwhile, the brittle semiconductor materials treat that sliver part interior 32 is heated temperature and is less than the brittle semiconductor materials bullet
Property deformation temperature.
In the present embodiment, the brittle semiconductor materials 3 are sapphire, and actually described brittle semiconductor materials 3 can
To be but not limited to GaAs (GaAs), gallium nitride (GaN), cadmium telluride (CdTe), zinc selenide (ZnSe), Silicon Wafer material etc..
The laser beam portion that the brittle semiconductor materials are sent to the laser is transparent so that the brittle semiconductor materials are waited to split
Piece part interior can absorb laser energy so as to form temperature rise, and temperature is heated inside brittle semiconductor materials less than fragility half
The plastic deformation temperature of conductor material, at the same laser beam do not allow for destroying the brittle semiconductor materials (refer to plastic deformation or
Person's internal explosion).
The laser of the present embodiment uses carbon dioxide laser, and the design parameter of its laser beam launched is：Continuously
Laser, 9 microns of wavelength, 200 watts of laser power, beam quality factor are less than 1.2, the focal beam spot 50 of heating laser light beam 2
Micron.
The modulus of elasticity of sapphire crystal rises and reduced with temperature, about 505GPa when zero degrees celsius, when 1000 degree
About 465Gpa, some data show 380GPa, and the present embodiment calculates according to 380GPa, and fracture strength is about 400MPa.
Sapphire treats sliver region surface tension, has following equation according to mechanics of materials thermal stress principle：
σ=E (- ⊿ L/L)=Ea (T-To),
Wherein (T-To) is to treat the not hungry surface 31 of sliver and treat the temperature difference of sliver part interior 32；A is thermal coefficient of expansion,
Sapphire single-crystal material thermal expansion coefficient, it is 8.8*10-6/ degrees Celsius that some data, which are shown, and some data are shown as 5.8*10-
6/ degree Celsius, the present embodiment calculates according to the latter, and actual as temperature rises, its thermal coefficient of expansion also rises, and this formula calculates
Calculated according to conservative normal temperature thermal coefficient of expansion；E is modulus of elasticity.
The surface region 31 of fragile material 3 be cooled fluid beam 1 cool down after temperature zero degrees celsius, the fragile material
3 interior zones 32 are heated 400 degrees Celsius of temperature after laser beam 2 heats, (T-To)=400 degree Celsius, a=5.8*10-6/
Degree Celsius, E=380GPa, it is 882MPa by calculating sapphire single-crystal sliver region surface tension, is broken more than sapphire
Intensity 400MPa, it can essentially further reduce the temperature difference that sapphire treats sliver region ectonexine so that sliver technological parameter
It is more broad.
The cooling fluid beam 1 is synchronized with the movement with heating laser beam 2 relative to brittle semiconductor materials 3 to be processed, control
The brittle fracture track of prepared material, you can realize perfect semi-conducting material sliver processing, including straight line and curve even space
Curvilinear cut, sapphire 18 ms/min of sliver speed is realized, end face is smooth, no laser cutting kerf, and the heating laser beam 2 does not have
Sapphire internal sabotage is caused, the small pieces sapphire mechanical strength of separation does not decline.
Absorption of the brittle semiconductor materials to heating laser beam can be brittle semiconductor materials in itself to the ripple
Long laser be it is partially transparent partially absorb or brittle semiconductor materials are in itself transparent to the wavelength laser, but
It is due to that laser spot power density is higher after the heating laser beam focuses on so that the brittle semiconductor materials are to this originally
Wavelength laser is transparent to be switched to absorb.The inside of the invention, heating laser beam is heated into brittle semiconductor materials, but is not destroyed
The brittle semiconductor materials, due to introducing cooling fluid beam, the fragile material can be just guided along design path cleavage
Split.Therefore LASER Light Source can also use the optical fiber laser or solid state laser of 1 micron wave length in the present embodiment, although
Sapphire is transparent to the wavelength, but sapphire is to absorb to laser at laser spot, therefore can realize inside sapphire sheet
Heating, and material surface is due to seldom to the wavelength absorption, therefore be easier to realize cooling fluid beam and/or objective table to blue precious
The cooling on stone surface.
Refrigerating module uses the table for treating sliver position of cooling fluid beam 1 or low temperature loading platform to brittle semiconductor materials
Face is quickly cooled down, when using cooling fluid beam 1, cooling fluid beam 1 can be liquid or gaseous state cryogenic inert gas,
Cryogenic air, liquid carbon dioxide either cryogenic carbon dioxide gas, liquid nitrogen or low temperature nitrogen, liquified hydrogen or low temperature hydrogen
In one or more kinds of combinations., will when quickly being cooled down to the surface of brittle semiconductor materials using low temperature loading platform
Brittle semiconductor materials are positioned on low temperature loading platform, so that low temperature loading platform is carried out to the contact surface of brittle semiconductor materials 3
Quickly but.The present embodiment employs low temperature nitrogen and brittle semiconductor materials is cooled down, and gas flow rate is 5 liters/min, above-mentioned
Low temperature refer to be less than 5 DEG C.
Heating laser beam 2 can be located at the same face of brittle semiconductor materials with cooling fluid beam 1, can also be located at fragility
The different faces of semi-conducting material.Heating laser beam can be located at the same face of brittle semiconductor materials with cooling fluid beam, so
More convenient using laser cutting head, laser cutting head carries adjustable focus lamp, and there is an air inlet side of laser cutting head
Mouthful, for inputting high pressure cooling fluid, such heating laser beam 2 and cooling fluid beam 1 can be realized coaxially.Heating laser beam 2
The two sides of brittle semiconductor materials can also be located at cooling fluid beam 1, advantage of this is that, when part, heating laser is crisp
Property semi-conducting material absorb after, heating laser is smaller in the laser energy of the exit surface of brittle semiconductor materials, cooling stream
Body beam treats that the laser-emitting face cooling of sliver position can more effectively form cryogenic material surface to brittle semiconductor materials.
In addition, cooling fluid beam 1 can be coaxial with heating laser beam 2, can not also coaxially, reference can be made to Fig. 3-a and Fig. 3-b
It is shown, when cooling fluid beam 1 and coaxial heating laser beam 2, cooling fluid beam 1 can be accelerated brittle semiconductor materials 3 are treated
The cooling of sliver portion faces 31, and when cooling fluid beam 1 and not coaxial heating laser beam 2, such benefit is sub-cooled
Fluid beam 1 will not also be cooled down to the optical element inside the light path of contact, cause the optical component of cooling also to have heat should
The change of power, the focusing effect of heating laser beam is have impact on, particularly have impact on the Laser Focusing facula position of heating laser beam.
On the other hand, the cooling fluid beam of this mode, which encounters the exit direction behind brittle semiconductor materials surface, has certain determination
Property, useful in some cases, the cooling of sliver portion faces can be treated in advance, change the incidence of the cooling fluid beam
Behind direction, the brittle material surface that can also be treated to cooling fluid beam with heating laser beam continues to cool down, because stress splits
Piece has the time course of a crackle diffusion, and lasting cooling is advantageous to being smoothed out for sliver.
The system that the present embodiment provides also includes laser 4, beam shaping element 6 and Laser Focusing module 8, wherein, light
Beam shaping element 6 carries out beam shaping to the first laser beam 5 launched by laser 4, the second laser beam 7 formed after shaping.
Laser Focusing module 8, for being focused to the laser beam after shaping, form heating laser beam 2.Due to increasing in whole light path
Beam shaping element 6 is added, therefore the focal beam spot of the heating laser beam after the focusing of Laser Focusing module 8 focuses on for flat-top
Hot spot.Uniform heating to brittle semiconductor materials is advantageous to using flat-top laser beam, and flat-top focal beam spot depth of focus is shorter, this
Sample reduces the heating degree on the surface 31 for treating sliver position of brittle semiconductor materials 2 as far as possible, and it is right to be advantageous to cooling fluid beam 1
Brittle semiconductor materials 1 obtain low surface layer temperatures as far as possible when the surface 31 at sliver position is cooled down.Flat-top gathers
Burnt hot spot is specifically as follows square flat-top focal beam spot or circular flat focal beam spot, if desired forms brittle semiconductor materials
Straight line path sliver, it is proper using square flat-top focal beam spot, so heat more uniform, if desired form fragility half
The curved path sliver of conductor material, it is proper using circular flat focal beam spot.
Referring to Fig. 3-a, the inside of Laser Focusing module 8 is equipped with laser focusing lens module 81, the inside of Laser Focusing module 8
Cooling fluid beam chamber 82 is also installed, positioned at the lower section of laser focusing lens module 81, the cooling fluid beam chamber 82 is provided with cold
But fluid intake 83, it is also equipped with cooling fluid beam 1 and exports, usual cooling fluid beam entrance is arranged on the side of cooling fluid beam chamber
Face, cooling fluid beam export the lower section for being arranged on cooling fluid beam chamber.Cooling fluid beam 1 is same with the delivery outlet of heating laser beam 2
One outlet, cooling fluid beam 1, in brittle semiconductor materials 3, control brittle semiconductor materials with the collective effect of heating laser beam 2
3 brittle fracture track, the sliver processing of perfect brittle semiconductor materials 3 is realized, including straight line sliver or curve sliver are very
To controlling curve sliver.Cooling fluid beam 1 in the same direction coaxially can not also be coaxial with heating laser beam 2, reference can be made to Fig. 3-b.
The system that the present embodiment provides can also include cleaning module, and it uses cleaning laser beam or mechanical lapping equipment
Heating laser beam described in the brittle semiconductor materials surface barrier is removed to treat in sliver position into brittle semiconductor materials
The isolated material in portion, so that heating laser beam smoothly can be heated quickly into the inside of brittle semiconductor materials.In portion
Man of subsidiary factory Silicon Wafer production in, may be scattered at random among sliver path have be not etched clean metal residual or its
Its nonmetallic residual, these residues are opaque to heating laser beam, block heating laser beam to Silicon Wafer interior zone
Heating.Now the laser beam of relative high-peak power can be used to be purged residue, because residue is seldom, therefore swashed
For light removing speed than very fast, the difference that cleaning laser beam can come from same LASER Light Source with heating laser beam goes out optical mode,
It can come from different LASER Light Sources.Cleaning residue can also use mechanical lapping mode, particularly be entered with diamond blade
Row cutting and grinding is removed, and the Technical comparing is ripe, is existing machinery cutting crystal wafer mainstream technology, is suitable for thicker wafer and cuts
Cut.Because depth of cut is very shallow in the present embodiment, diamond blade can be completed clear very fast to Silicon Wafer active force very little
Science and engineering is made, and the heating of Silicon Wafer inside is cleared away the obstacles for subsequent heat laser beam.
The fragility splinter method and system, its advantage of a kind of brittle semiconductor materials provided by the invention be：
(1) to brittle semiconductor material while the inside for the treating sliver position progress to brittle semiconductor materials is quickly heated
Material treat that the surface at sliver position is quickly cooled down, using brittle semiconductor materials fragility and expand with heat and contract with cold, fragility partly
Conductor material treats that sliver portion faces form over the tension of brittle semiconductor materials yield strength, in brittle semiconductor material
The compression that is internally formed for treating sliver position of material, perfectly brittle semiconductor materials sliver is processed, relative to current fragility
Semi-conducting material processing mode, high kerf quality is obtained, remain the bending strength of brittle semiconductor materials, thus overcome
The defects of conventional laser cutting silicon crystal circle can leave a large amount of micro-cracks, improves chip sliver quality, and relative to main flow
Diamond blade cutting silicon crystal circle, the present invention possess the natural advantage of Laser Processing, improve the sliver of brittle semiconductor materials
Efficiency.
(2) cooling fluid beam moves with heating laser beam relative to brittle semiconductor materials spatial synchronization to be processed, control
The brittle fracture track of brittle semiconductor materials processed, you can the sliver processing of perfect brittle semiconductor materials is realized, including it is straight
Line and curve even space curve cutting.
(3) brittle semiconductor materials after cutting are because section is smooth, without trickle chips defect, and existing cutting side
Laser cutting texture and micro-crack be present, a large amount of micro-cracks be present, reduce fragile material after sliver in formula, brittle semiconductor inside
Bending strength, and using the present invention by the way of, the separation sliver unit after brittle semiconductor materials sliver passes through 3 bendings
For the brittle semiconductor materials before cutting, bending strength does not reduce bending strength substantially after test.
(4) random be scattered has when not being etched clean metal residue or other residues among sliver path, adopts
With cleaning laser beam or mechanical lapping equipment, remove brittle semiconductor materials surface barrier heating laser beam and enter fragility half
Conductor material treats the isolation residue of sliver part interior, and the heating of brittle semiconductor materials inside is swept for subsequent heat laser beam
Remove obstacles and hinder, be advantageous to heating laser beam and brittle semiconductor materials are treated quickly to be heated inside sliver.
In the description of this specification, reference term " embodiment one ", " example ", " specific example " or " some examples "
Deng description mean to combine specific method, device or feature that the embodiment or example describe and be contained at least the one of the present invention
In individual embodiment or example.In this manual, identical implementation is necessarily directed to the schematic representation of above-mentioned term
Example or example.Moreover, specific features, method, apparatus or the feature of description can be in any one or more embodiments or examples
In combine in an appropriate manner.In addition, in the case of not conflicting, those skilled in the art can be by this specification
The different embodiments or example and the feature of different embodiments or example of description are combined and combined.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc., it should be included in the scope of the protection.
Claims (12)
- A kind of 1. fragility splinter method of brittle semiconductor materials, it is characterised in that including：Using heating laser beam to fragility half Conductor material treats that sliver part interior quickly heats, and the Laser Focusing focus of the heating laser beam is located at the fragility half Conductor material treats sliver part interior, so that brittle semiconductor materials treat that sliver part interior expands to form compression, together When sliver portion faces, which are quickly cooled down, to be treated to brittle semiconductor materials so that brittle semiconductor materials treat sliver position Surface shrinkage forms tension, so that brittle fracture occurs for brittle semiconductor materials, forms smooth incisions；Wherein, it is described Brittle semiconductor materials are transparent to the heating laser beam optics or partial optical is transparent, so that the heating laser beam can Into inside the brittle semiconductor materials so that the brittle semiconductor materials treat that sliver part interior absorbs laser energy So as to form temperature rise, the brittle semiconductor materials treat that sliver part interior is heated temperature and is less than the brittle semiconductor materials Plastic deformation temperature, while laser beam does not allow for destroying the brittle semiconductor materials.
- 2. the fragility splinter method of brittle semiconductor materials as claimed in claim 1, it is characterised in that the heating laser beam To focus on laser beam, the Laser Focusing focus of the heating laser beam is flat-top focal beam spot.
- 3. the fragility splinter method of brittle semiconductor materials as claimed in claim 2, it is characterised in that the flat-top focuses on light Spot is square flat-top focal beam spot or circular flat focal beam spot.
- 4. the fragility splinter method of brittle semiconductor materials as claimed in claim 1, it is characterised in that using heating laser Beam treats that sliver part interior also includes before or while quickly heating to brittle semiconductor materials：Remove heating laser beam described in the brittle semiconductor materials surface barrier and treat sliver portion into brittle semiconductor materials Isolated material inside position.
- 5. the fragility lobe system of a kind of brittle semiconductor materials, it is characterised in that including heating module and refrigerating module；The heating module treats that sliver part interior quickly heats using heating laser beam to brittle semiconductor materials, and described What the Laser Focusing focus of heating laser beam was located at the brittle semiconductor materials treats sliver part interior, so that brittle semiconductor Material treats that sliver part interior expands to form compression；The refrigerating module treats sliver portion to brittle semiconductor materials simultaneously Position surface is quickly cooled down, so that brittle semiconductor materials treat that sliver portion faces shrink to form tension, so that Brittle fracture occurs for brittle semiconductor materials, forms smooth incisions；Wherein, the brittle semiconductor materials are to the heating laser Beam optics is transparent or partial optical is transparent, so that the heating laser beam can enter inside the brittle semiconductor materials, So that the brittle semiconductor materials treat that sliver part interior absorbs laser energy so as to form temperature rise, the brittle semiconductor Material treats that sliver part interior is heated temperature and is less than the brittle semiconductor materials plastic deformation temperature, while laser beam is not Allow to destroy the brittle semiconductor materials.
- 6. the fragility lobe system of brittle semiconductor materials as claimed in claim 5, it is characterised in that the refrigerating module is adopted Sliver portion faces, which are quickly cooled down, to be treated to brittle semiconductor materials with cooling fluid beam or low temperature loading platform.
- 7. the fragility lobe system of brittle semiconductor materials as claimed in claim 6, it is characterised in that the cooling fluid beam For in liquid low temperature inert gas, gaseous state cryogenic inert gas, Cryogenic air, liquid carbon dioxide, cryogenic carbon dioxide gas One or more kinds of combinations.
- 8. the fragility lobe system of brittle semiconductor materials as claimed in claim 7, it is characterised in that the liquid low temperature is lazy Property gas is liquid nitrogen, and the gaseous state cryogenic inert gas is low temperature nitrogen.
- 9. the fragility lobe system of the brittle semiconductor materials as described in claim any one of 5-8, it is characterised in that also include Beam shaping element and Laser Focusing module；The beam shaping element, for carrying out beam shaping to the laser beam launched by laser；The Laser Focusing module, for being focused to the laser beam after shaping, the heating laser beam of focus state is formed, its In, the focused spot of the heating laser beam is flat-top focal beam spot.
- 10. the fragility lobe system of brittle semiconductor materials as claimed in claim 9, it is characterised in that the Laser Focusing Module includes laser focusing lens module and the cooling fluid beam chamber being disposed below, and the cooling fluid beam chamber is additionally provided with Cooling fluid beam entrance and the outlet of cooling fluid beam.
- 11. the fragility lobe system of brittle semiconductor materials as claimed in claim 10, it is characterised in that also include：Cleaning module, for removing the brittle semiconductor materials surface barrier using cleaning laser beam or mechanical lapping equipment The heating laser beam enters the isolated material for treating sliver part interior of brittle semiconductor materials.
- 12. the fragility lobe system of brittle semiconductor materials as claimed in claim 11, it is characterised in that the cleaning laser Beam goes out optical mode or from different LASER Light Sources from the difference of the heating laser beam from same LASER Light Source；When the cleaning laser beam goes out optical mode with the difference of the heating laser beam from same LASER Light Source, the heating Laser beam is continuous laser or low peak power pulse laser beam, and the cleaning laser beam is pulse laser beam；When it is described cleaning laser beam from heating laser beam from different LASER Light Sources when, the heating laser beam is continuous laser Or low peak power pulse laser beam, the cleaning laser beam is ultra-short pulse laser beam.
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| CN113814578B (en) * | 2021-09-30 | 2022-06-14 | 深圳市吉祥云科技有限公司 | Method for processing brittle material |
| CN114346476A (en) * | 2022-01-30 | 2022-04-15 | 苏州沃特维自动化系统有限公司 | Structure and process method for cutting battery piece at low temperature without damage |
| CN114734153B (en) * | 2022-03-31 | 2023-02-14 | 武汉华日精密激光股份有限公司 | Splitting method and system for processing brittle material by laser |
| CN114851411A (en) * | 2022-06-02 | 2022-08-05 | 深圳市光道激光技术有限公司 | Brittle plate splitting machine and splitting process |
| CN115781059B (en) * | 2023-02-08 | 2023-07-21 | 佛山科学技术学院 | Laser cutting method and system based on brittle material |
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