TWI716589B - Breaking method and breaking device of brittle material substrate - Google Patents

Breaking method and breaking device of brittle material substrate Download PDF

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TWI716589B
TWI716589B TW106114595A TW106114595A TWI716589B TW I716589 B TWI716589 B TW I716589B TW 106114595 A TW106114595 A TW 106114595A TW 106114595 A TW106114595 A TW 106114595A TW I716589 B TWI716589 B TW I716589B
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laser beam
breaking
aberration
brittle material
material substrate
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TW201813752A (en
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井上修一
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日商三星鑽石工業股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/0007—Applications not otherwise provided for
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/54—Glass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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  • Combustion & Propulsion (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Laser Beam Processing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

本發明提供一種利用使雷射光束產生像差而聚焦所得之像差雷射光束與分斷用雷射光束之脆性材料基板之分斷方法及分斷裝置。 本發明之脆性材料基板之分斷方法係使包含脈衝雷射光束之突發脈衝之雷射光束L1透過產生像差之像差產生透鏡4c而形成為像差雷射光束L2，沿脆性材料基板W之分斷預定線S掃描該像差雷射光束L2而形成改質層，沿該改質層照射分斷用雷射光束L3，並且追隨於該分斷用雷射光束L而冷卻該分斷用雷射光束L3之照射點P之行進方向前方側，從而沿分斷預定線S分斷脆性材料基板W。The present invention provides a method and device for breaking a brittle material substrate using aberration laser beams and breaking laser beams obtained by focusing the laser beams with aberrations. The breaking method of the brittle material substrate of the present invention is to make the laser beam L1 including the burst pulse of the pulse laser beam pass through the aberration generating lens 4c to generate the aberration laser beam L2, along the brittle material substrate The breaking plan line S of W scans the aberration laser beam L2 to form a modified layer, irradiates the breaking laser beam L3 along the modified layer, and follows the breaking laser beam L to cool the fraction The cutting laser beam L3 is irradiated on the front side of the advancing direction of the point P, thereby cutting the brittle material substrate W along the planned cutting line S.

Description

脆性材料基板之分斷方法及分斷裝置Breaking method and breaking device of brittle material substrate

本發明係關於一種使用分斷用雷射光束之玻璃等脆性材料基板之分斷方法及分斷裝置。The invention relates to a method and a device for breaking a brittle material substrate such as glass using a laser beam for breaking.

自先前以來，便利用照射對基板具有透過性之(透明之)脈衝雷射光束而形成內部改質層之被稱為「隱形切割」(Stealth Dicing)的雷射加工技術(參照專利文獻1)。該雷射加工技術係藉由如下方式形成改質層，即，將焦點對準所應分斷之區域之基板內部照射脈衝雷射光束而使其改質，並沿切割道(分斷預定線)連續地進行該改質。然後，藉由沿強度降低之改質層施加外力而進行分斷。 又，近年來不斷推進脈衝寬度(脈衝持續時間)為奈秒(ns)、微微秒(ps)之分斷用雷射光束之研究及開發，結果仍是利用雷射加工技術，該雷射加工技術係照射以由各個脈衝分割而成之突發脈衝串(突發脈衝光)之形式振盪之被稱為「突發脈衝模式」的分斷用雷射光束而進行基板之內部改質(參照專利文獻2)。 即，使用對基板具有透過性之波長之雷射，以成為其脈衝雷射光束之重複頻率及脈衝寬度適於加工之分斷用雷射光束之方式進行調整，將聚光點對準基板內部進行照射，藉此可不發生剝蝕而形成改質層。該雷射加工技術係使各個脈衝以分割成包含複數個(例如2~10個)微細脈衝寬度之突發脈衝光(突發脈衝串)之狀態振盪而照射，並非直接照射具有經調整後之脈衝寬度之分斷用雷射光束。 例如，於藉由脈衝光產生設備以10 μJ之脈衝光能產生重複頻率為100 kHz(以10 μ秒(μs)週期產生脈衝)且脈衝寬度為200 ns之分斷用雷射光束時，藉由突發發脈衝光形成設備使該分斷用雷射光束以分割成微細脈衝寬度為1 ns之10個突發脈衝光(突發脈衝串)之狀態振盪。於該情形時，突發脈衝光之峰值功率理論上平均為(10 μJ/10個)/1 ns=1 kW，但各突發脈衝光之峰值功率可彼此相同，亦可彼此不同(例如，使各突發脈衝光之峰值功率依序變大、依序變小等)。 然後，使對矽基板具有透過性之波長(例如1064 nm)且適於改質之脈衝寬度之脈衝雷射光束以此種包含複數個微細脈衝寬度之突發脈衝光的形式振盪，藉由聚光器將突發脈衝光之聚光點對準基板之厚度方向中央部，而以「突發脈衝模式」對矽基板進行照射。藉此，揭示有如下情形，即，可抑制朝向被加工物之雷射入射面之相反面側的逃逸光對相反面造成之損傷，從而可抑制對預先形成於該相反面上之器件之損傷。 又，作為利用分斷用雷射光束之突發脈衝串(突發脈衝光)將基板劈開之加工方法，於其他文獻中揭示有於基板內形成「光絲」而進行加工之雷射加工技術。即，於專利文獻3中揭示有如下情形，即，將藉由物鏡而聚焦之聚焦雷射光束照射至基板，於基板內形成長度為數百微米或數毫米、被稱為「雷射絲」(以下簡稱為「光絲」)、使雷射能量累積之狹長的通道，平移基板而呈直線狀或曲線狀移動光絲，藉此刻劃光絲軌跡而進行加工(特別是0035、0039段)。於該文獻中，作為可應用該加工方法之基板材料，記載有玻璃、半導體、透明陶瓷、聚合物、透明導體、寬帶隙玻璃、水晶、結晶石英、金剛石及藍寶石。 又，於專利文獻4中揭示有如下改良方法，即，進一步於空間上擴張上述專利文獻3中所記載之「雷射絲」，而於空間上較長地形成相同材質之光絲。 根據該文獻，於專利文獻3中揭示有如下情形，即，包含超高速脈衝雷射光束之突發脈衝之入射雷射光束藉由「聚焦透鏡」於基板內部聚焦，從而於基板內部可形成數百微米左右之光絲。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利第3408805號公報 [專利文獻2]日本專利特開2014-104484號公報 [專利文獻3]日本專利特表2013-536081號公報 [專利文獻4]日本專利特開2015-037808號公報Since the past, a laser processing technology called "Stealth Dicing" (see Patent Document 1) has been used to form an internal modified layer by irradiating a (transparent) pulsed laser beam that is transparent to the substrate. . The laser processing technology is to form the modified layer by focusing on the area to be divided and irradiating the inside of the substrate with a pulsed laser beam to modify it, and then along the cutting path (pre-cutting line) ) This modification is continuously performed. Then, the breaking is performed by applying an external force along the modified layer of reduced strength. In addition, in recent years, the research and development of laser beams for breaking the pulse width (pulse duration) in nanoseconds (ns) and picoseconds (ps) have been continuously promoted. As a result, laser processing technology is still used. The technology is to irradiate a laser beam called "burst mode" that oscillates in the form of bursts (burst pulses) formed by dividing each pulse to perform internal modification of the substrate (see Patent Document 2). That is, use a laser with a wavelength that is transparent to the substrate to adjust the repetition frequency and pulse width of the pulsed laser beam to be suitable for processing. The laser beam is adjusted to align the condensing point inside the substrate. By irradiating, the modified layer can be formed without erosion. The laser processing technology oscillates each pulse in a state of being divided into bursts of light (burst pulse trains) containing a plurality of (e.g., 2-10) minute pulse widths, instead of direct irradiation. Laser beam is used for pulse width division. For example, when using a pulsed light generator to generate a pulsed light energy of 10 μJ with a repetition frequency of 100 kHz (pulses are generated at a period of 10 μs (μs)) and a pulse width of 200 ns for a splitting laser beam, borrow The laser beam for breaking is oscillated by a burst light forming device in a state of being divided into 10 bursts (bursts) with a fine pulse width of 1 ns. In this case, the peak power of the burst light theoretically averages (10 μJ/10 pieces)/1 ns = 1 kW, but the peak power of each burst light can be the same or different from each other (for example, Make the peak power of each burst light increase and decrease sequentially, etc.). Then, a pulsed laser beam with a wavelength (for example, 1064 nm) that is transparent to the silicon substrate and has a pulse width suitable for modification is oscillated in the form of burst pulse light including a plurality of fine pulse widths, and by focusing The optical device aligns the condensing point of the burst light at the center of the substrate in the thickness direction, and irradiates the silicon substrate in a "burst pulse mode". By this, it is disclosed that it is possible to suppress the damage to the opposite surface caused by the escaped light toward the opposite surface of the laser incident surface of the workpiece, thereby suppressing damage to the device previously formed on the opposite surface . In addition, as a processing method for splitting a substrate using a burst of laser beams for breaking (burst pulse light), other documents disclose laser processing techniques that form "light filaments" in the substrate for processing. . That is, Patent Document 3 discloses a situation in which a focused laser beam focused by an objective lens is irradiated to a substrate, and a length of hundreds of microns or a few millimeters is formed in the substrate, which is called a "laser wire" (Hereinafter referred to as "light filament"), a narrow and long channel that accumulates laser energy, translates the substrate and moves the light filament in a linear or curved shape, thereby scribing the light filament track for processing (especially the 0035, 0039 paragraphs) ). In this document, glass, semiconductor, transparent ceramic, polymer, transparent conductor, wide band gap glass, crystal, crystalline quartz, diamond, and sapphire are described as substrate materials to which this processing method can be applied. In addition, Patent Document 4 discloses an improved method of further expanding the "laser wire" described in Patent Document 3 in space and forming a filament of the same material to be longer in space. According to this document, Patent Document 3 discloses a situation in which the incident laser beam containing burst pulses of ultra-high-speed pulsed laser beams is focused inside the substrate by a "focusing lens", so that data can be formed inside the substrate. Light filament of about 100 microns. [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent No. 3408805 [Patent Document 2] Japanese Patent Laid-Open No. 2014-104484 [Patent Document 3] Japanese Patent Publication No. 2013-536081 [Patent Document 4] Japanese Patent Laid-Open No. 2015-037808

[發明所欲解決之問題] 藉由上述專利文獻3、4中所示之「雷射絲」將形成強度變弱之改質層後之玻璃基板分斷時，採用藉由沿改質層按壓切斷桿(break bar)使基板機械性地撓曲而進行分斷之方法。此時，於形成改質層後之分斷預定線為直線之情形時，可沿分斷預定線將基板徹底地分斷，但於如圖7(a)所示般分斷預定線S為於角部具有圓弧S1之四邊形形狀之情形時、或如圖7(b)所示般於直線狀之分斷預定線S之中間具有圓弧狀凸部S2之情形時，難以使圓弧S1或凸部S2之區域沿分斷預定線S均勻地撓曲，從而無法徹底地加以分斷。 因此，亦可考慮將CO2 雷射照射至改質層，利用因加熱而產生之壓縮應力進行分斷的方法，以此代替利用切斷桿進行之機械分斷方法。 然而，於利用CO2 雷射進行之切斷中，存在如下傾向，即，於將雷射光束照射至改質層而進行掃描時，如圖8所示，於較雷射照射點P更靠雷射行進方向前方側前延產生較小之裂痕K。該現象於分斷預定線S為直線之情形時並不存在問題，但於分斷預定線S為圓弧之情形時，裂痕於圓弧之切線方向上前延，因此如圖9(a)所示般龜裂K1產生前延等情況而無法徹底地加以分斷。特別是於圓弧之半徑為5 mm以下之情形時，分斷變得更為困難。又，於如圖9(b)所示般於直線之分斷預定線S之中間具有圓弧狀凸部S2之情形時，存在以橫切凸部S2之底邊之方式產生龜裂K2等而導致良率變差等問題。 因此，本發明之目的在於提供一種可利用包含脈衝雷射光束之突發脈衝之像差雷射光束、及CO2 雷射等分斷用雷射光束，精度良好且徹底地分斷脆性材料基板之分斷方法及分斷裝置。 [解決問題之技術手段] 為了達成上述目的而完成之本發明之脆性材料基板之分斷方法如下：使包含脈衝雷射光束之突發脈衝之雷射光束透過產生像差之像差產生透鏡而形成為像差雷射光束，沿脆性材料基板之分斷預定線掃描上述像差雷射光束而形成改質層(通常為強度降低之改質層)，沿該改質層照射分斷用雷射光束，並且追隨於該分斷用雷射光束而冷卻(例如，藉由吹送冷卻介質而冷卻)該分斷用雷射光束之照射點之行進方向前方側(較佳為包含行進方向前方側之周邊)，藉此沿分斷預定線分斷上述脆性材料基板。 於本發明之分斷方法中，較佳為將像差雷射光束聚焦程度最高之最高聚焦部對準脆性材料基板之厚度之中間位置而進行掃描。此處，像差雷射光束之最高聚焦部係指於沿像差雷射光束之照射方向測定光束分佈(強度分佈)時，光束分佈之峰值功率最高之位置(沿像差雷射光束之照射方向之位置)。又，作為分斷用雷射光束，較佳為波長為10.6 μm之CO2 雷射光束、或波長為1064 nm之Nd；YAG(Neodymium-doped Yttrium Aluminium Garnet，摻釹釔鋁石榴石)雷射光束。 又，自另一觀點而完成之本發明之脆性材料基板之分斷裝置構成為包含：平台，其載置脆性材料基板；像差雷射光束發光構件，其經由產生像差之像差產生透鏡而將自光源出射之包含脈衝雷射光束之突發脈衝之雷射光束形成為像差雷射光束；像差雷射光束發光構件移動機構，其使上述像差雷射光束發光構件沿上述脆性材料基板之分斷預定線相對性地移動；分斷用雷射光束發光構件，其沿被照射上述像差雷射光束後之上述分斷預定線照射分斷用雷射光束；冷媒噴射構件，其冷卻上述分斷用雷射光束之照射點之雷射光束行進方向前方側(較佳為包含行進方向前方側之周邊)；及分斷用雷射光束發光構件移動機構，其使上述分斷用雷射光束發光構件及冷媒噴射構件沿上述脆性材料基板之分斷預定線相對性地移動。 [發明之效果] 本發明係如上所述般地構成，因此一面沿利用像差雷射光束而形成之改質層之線照射分斷用雷射光束一面使該分斷用雷射光束移動，藉此可沿分斷預定線完全分斷玻璃基板等脆性材料基板。此時，分斷用雷射光束之照射點之行進方向前方側得到冷卻(較佳為以行進方向前方側為中心而使照射點之周邊得到冷卻)，因此可有效地提高於照射點之部位產生之熱應力、即因加熱而產生之壓縮應力及因冷卻而產生之拉伸應力，藉此可不產生雷射行進方向前方側之裂痕而有效地僅分斷照射點之部位。因此，即便分斷預定線為於角部具有圓弧之四邊形形狀、或為如於直線狀之分斷預定線之中途具有彎曲之凸部的複雜之形狀，亦具有如下效果，即，可不產生於圓弧之切線方向上前延之龜裂、或橫切凸部之底邊之龜裂等而沿分斷預定線徹底地進行分斷。 於本發明中，可為上述像差產生透鏡由平凸透鏡所形成。於該情形時，自平凸透鏡之平面側入射雷射光束，藉此可自凸面側出射像差雷射光束。 進而，於本發明中，亦可為上述像差雷射光束之光源係波長為0.7~2.5 μm(例如，Nd：YAG雷射之基諧波)之近紅外雷射，且使用脈衝寬度為100微微秒以下之雷射光束之突發脈衝。[Problem to be solved by the invention] When the glass substrate after the modified layer with weakened strength is formed by the "laser wire" shown in the above-mentioned Patent Documents 3 and 4 is broken, pressing along the modified layer A method in which a break bar mechanically flexes the substrate and breaks it. At this time, when the planned breaking line after forming the modified layer is a straight line, the substrate can be completely broken along the planned breaking line, but the planned breaking line S is as shown in Figure 7(a) When the corners have a quadrilateral shape of an arc S1, or when there is an arc-shaped convex portion S2 in the middle of the linear planned breaking line S as shown in FIG. 7(b), it is difficult to make the arc The area of the S1 or the convex portion S2 is evenly flexed along the predetermined breaking line S, so that it cannot be completely divided. Therefore, it is also possible to consider a method of irradiating CO 2 laser to the modified layer and breaking it using the compressive stress generated by heating, instead of the mechanical breaking method using a cutting rod. However, in the cutting using CO 2 laser, there is a tendency that when the laser beam is irradiated to the modified layer for scanning, as shown in FIG. 8, it is closer to the laser irradiation point P A small crack K is formed on the forward side of the laser traveling direction. This phenomenon does not have a problem when the predetermined breaking line S is a straight line, but when the predetermined breaking line S is a circular arc, the crack advances in the tangent direction of the arc, so as shown in Figure 9(a) As shown, the crack K1 has a forward delay and cannot be completely divided. Especially when the radius of the arc is less than 5 mm, the breaking becomes more difficult. In addition, in the case where there is an arc-shaped convex portion S2 in the middle of the planned dividing line S of the straight line as shown in FIG. 9(b), a crack K2 may be generated by crossing the bottom edge of the convex portion S2, etc. This leads to problems such as poor yield. Therefore, the object of the present invention is to provide a laser beam for aberration laser beams including burst pulses of pulsed laser beams, and laser beams for breaking such as CO 2 lasers, which can accurately and completely break brittle material substrates. The breaking method and breaking device. [Technical Means to Solve the Problem] The method of breaking the brittle material substrate of the present invention completed to achieve the above-mentioned purpose is as follows: a laser beam containing a burst pulse of a pulsed laser beam is passed through an aberration-generating lens It is formed as an aberration laser beam, and the aberration laser beam is scanned along the predetermined breaking line of the brittle material substrate to form a modified layer (usually a modified layer with reduced intensity), and the breaking laser is irradiated along the modified layer Irradiate the beam and follow the laser beam for splitting to cool (for example, cooling by blowing a cooling medium) the forward side of the irradiation point of the laser beam for splitting in the traveling direction (preferably including the forward side of the traveling direction) The periphery), thereby breaking the brittle material substrate along the predetermined breaking line. In the breaking method of the present invention, it is preferable to align the highest focusing part with the highest degree of focusing of the aberration laser beam to the middle position of the thickness of the brittle material substrate for scanning. Here, the highest focus part of the aberration laser beam refers to the position where the peak power of the beam distribution is the highest when the beam distribution (intensity distribution) is measured along the irradiation direction of the aberration laser beam (along the irradiation of the aberration laser beam) The position of the direction). In addition, as a laser beam for breaking, a CO 2 laser beam with a wavelength of 10.6 μm or a Nd with a wavelength of 1064 nm is preferred; YAG (Neodymium-doped Yttrium Aluminium Garnet, neodymium-doped Yttrium Aluminium Garnet) laser beam. In addition, the breaking device of the fragile material substrate of the present invention completed from another point of view is configured to include: a platform on which the fragile material substrate is placed; and an aberration laser beam emitting member that generates a lens through aberrations And the laser beam containing the burst pulse of the pulse laser beam emitted from the light source is formed into an aberration laser beam; the aberration laser beam light emitting member moving mechanism, which makes the aberration laser beam light emitting member follow the brittle The planned breaking line of the material substrate moves relatively; the cutting laser beam light-emitting member, which irradiates the cutting laser beam along the predetermined breaking line after the aberration laser beam is irradiated; the refrigerant injection member, It cools the forward side of the laser beam traveling direction (preferably including the periphery of the forward side of the traveling direction) of the irradiation point of the laser beam for breaking; and a moving mechanism for the light emitting member of the laser beam for breaking, which makes the breaking The laser beam light-emitting member and the refrigerant spraying member move relatively along the predetermined breaking line of the brittle material substrate. [Effects of the Invention] The present invention is constructed as described above, and therefore the laser beam for breaking is moved while irradiating the laser beam for breaking along the line of the reforming layer formed by the aberration laser beam. Thereby, brittle material substrates such as glass substrates can be completely broken along the planned breaking line. At this time, the front side of the irradiation point of the laser beam for breaking is cooled in the traveling direction (it is preferable to cool the periphery of the irradiation point with the front side of the traveling direction as the center), so the area of the irradiation point can be effectively increased The generated thermal stress, that is, the compressive stress generated by heating and the tensile stress generated by cooling, can effectively break only the part of the irradiation point without generating cracks on the front side of the laser traveling direction. Therefore, even if the planned breaking line is a quadrilateral shape with arcs at the corners, or a complicated shape with curved convex portions in the middle of the planned breaking line, it has the following effect, that is, no The cracks extending forward in the tangent direction of the arc, or the cracks that cross the bottom edge of the convex part, etc., are completely broken along the predetermined breaking line. In the present invention, the aforementioned aberration generating lens may be formed of a plano-convex lens. In this case, the laser beam is incident from the plane side of the plano-convex lens, whereby the aberration laser beam can be emitted from the convex side. Furthermore, in the present invention, the light source of the aberration laser beam can also be a near-infrared laser with a wavelength of 0.7~2.5 μm (for example, Nd: the fundamental harmonic of YAG laser), and a pulse width of 100 Burst pulses of laser beams below picoseconds.

以下，基於圖中所示之實施例對本發明之詳細內容進行說明。 圖1係表示本發明之刻劃裝置(分斷裝置)A之圖。 於刻劃裝置A中，在左右之支柱1、1設置有具備沿X方向之導件2之水平之樑(橫樑)3。於該樑3之導件2，以可藉由馬達M1而於X方向上移動之方式安裝有具備像差雷射光束發光構件4之刻劃頭5、及具備分斷用雷射光束發光構件6與冷卻構件(冷卻介質)7之刻劃頭8。載置並吸附保持成為加工對象之脆性材料基板W之平台9係經由以縱軸為支點之旋動機構10而保持於台盤11上，台盤11形成為可藉由利用馬達M2驅動之螺桿12而於Y方向(圖1之前後方向)上移動。再者，於本實施例中，像差雷射光束發光構件4與分斷用雷射光束發光構件6係分開安裝於不同之刻劃頭5、8，但亦可安裝於共同之刻劃頭。 如圖2所示，安裝於刻劃頭5之像差雷射光束發光構件4具備：光源4a，其出射脈衝寬度(脈衝持續時間)為100微微秒以下、較佳為50微微秒以下(通常為1微微秒以上)、此處為15微微秒之脈衝雷射光束；光調變器4b，其使自該光源4a經振盪後之脈衝雷射光束以由其分割而成之突發脈衝串之集合的形式出射；及像差產生透鏡4c，其使自該光調變器4b出射之雷射光束L1產生像差。 再者，對於光源4a，可使用波長為0.7~2.5 μm之近紅外雷射。 又，關於出射脈衝雷射光束之突發脈衝串之光調變器4b，例如於日本專利特表2012-515450號公報中有所揭示，此處利用公知之光調變器出射脈衝雷射光束之突發脈衝串，對於詳細情況省略說明。 用以使自光調變器4b出射之雷射光束L1產生像差之像差產生透鏡4c並無特別限定，此處利用平凸透鏡，該平凸透鏡係使焦點於光軸方向上分散，使所通過之雷射光束L1以聚結於軸向上離散之焦點之方式聚焦而使其產生像差。通過該平凸透鏡之雷射光束L1成為焦點分散之像差雷射光束L2。藉由自平凸透鏡之平面側入射雷射光束L1，可自凸面側出射像差雷射光束L2。 自脈衝雷射光束之突發脈衝串產生之像差雷射光束L2如圖3(a)所示，可藉由利用像差產生透鏡4c聚焦，而形成於各焦點部f累積雷射能量而成之狹長之高能量分佈區域F。圖3(b)表示將該高能量分佈區域F模式性地放大之圖。藉由形成此種高能量分佈區域F，於對作為加工對象物之脆性材料基板W、例如鈉玻璃基板之表面進行照射時，可自加工對象基板W之被照射面至內部深處地，加工強度變弱之改質層。 對於自安裝於另一刻劃頭8之分斷用雷射光束發光構件6出射之分斷用雷射光束L3(參照圖6)，可使用能藉由因加熱而產生之壓縮力將強度變弱之改質層完全分斷之雷射光束。於本實施例中，使用波長為10.6 μm之CO2 雷射光束作為該分斷用雷射光束L3。再者，亦可使用波長為0.7~10 μm之IR(Infrared，紅外線)雷射光束等代替CO2 雷射光束。又，作為自冷卻構件7噴射之冷媒，可使用冷卻空氣或噴霧狀之水等。 其次，一面參照圖1~6，一面於以下對使用上述刻劃裝置A之本發明之脆性材料基板W之分斷方法進行說明。於本實施例中，使用厚度為1.8 mm之鈉玻璃基板作為成為加工對象之脆性材料基板W。 首先，如圖5、圖6所示，於平台9上載置基板W，一面向基板W照射自像差雷射光束發光構件4出射之像差雷射光束L2，一面藉由包含刻劃頭5及導件2之像差雷射光束發光構件移動機構使該像差雷射光束L2沿基板W之分斷預定線S移動。此時，使像差雷射光束L2之聚焦部之高能量分佈區域F成為基板W之厚度之中間位置。藉此，可自基板W之被照射面至內部深處地，沿分斷預定線S加工改質層(通常為強度變弱之改質層)。 此處，於以下表示包含突發脈衝之像差雷射光束L2(脈衝雷射光束之突發脈衝串)之較佳之實施條件的一例。 雷射輸出：19.4 W 重複頻率：32.5 kHz 脈衝寬度：15微微秒 脈衝間隔(雷射脈衝於基板上之照射光點之照射間隔)：4 μm 突發脈衝：4脈衝 脈衝能量：155 μJ/1突發脈衝 掃描速度：130 mm/s 再者，加工深度及加工狀態可藉由上述雷射輸出、重複頻率、脈衝寬度、突發脈衝數或脈衝間隔、像差等之調整而容易地加以控制。 圖4係表示脈衝雷射光束之突發脈衝串之模式圖。形成由一個一個脈衝雷射光束分割而成之4個微細脈衝p，以重複頻率為單位而間歇性地照射該等微細脈衝p。 於以上述方式沿分斷預定線S對基板W加工強度變弱之改質層後，如圖6(a)所示，一面自分斷用雷射光束發光構件6向加工改質層後之分斷預定線S照射CO2 雷射光束L3，一面藉由包含刻劃頭8及導件2之分斷用雷射光束發光構件移動機構使該CO2 雷射光束L3沿分斷預定線S移動。同時，自冷卻構件7向CO2 雷射光束L3之照射點P之行進方向前方側噴射冷媒。圖6(b)係俯視相對於基板W之、CO2 雷射光束L3之照射點P之部位的俯視圖，且以符號B表示由冷卻構件7加以冷卻之冷卻區域。冷卻區域B係以藉由冷媒之飛散而冷卻雷射光束之照射點P之行進方向前方側(較佳為以照射點P之行進方向前方側為中心而包圍照射點P之周邊)之方式形成。 藉由以此方式一面沿加工改質層後之分斷預定線S照射CO2 雷射光束L3一面使該CO2 雷射光束L3移動，而利用熱應力使基板W沿分斷預定線S完全分斷。此時，CO2 雷射光束L3之照射點P之行進方向前方側得到冷卻(較佳為以照射點P之行進方向前方側為中心而使照射點P之周邊得到冷卻)，因此可有效地提高於照射點P之部位產生之熱應力、即因加熱而產生之壓縮應力及因冷卻而產生之拉伸應力，藉此可不產生如之前於圖8中所述之雷射行進方向前方側之裂痕K而有效地僅分斷照射點P之部位。因此，即便例如於如圖9(a)所示般分斷預定線S為於角部具有圓弧S1之四邊形形狀之情形時、或如圖9(b)所示般於直線狀之分斷預定線S之中間具有圓弧狀凸部S2之情形時，亦可不產生於圓弧之切線方向上前延之龜裂K1、或橫切凸部S2之底邊之龜裂K2而沿分斷預定線S徹底地進行分斷。 又，藉由冷卻CO2 雷射光束L3之照射點P之行進方向前方側(較佳為以照射點P之行進方向前方側為中心而冷卻其周邊)可提高熱應力，因此即便降低CO2 雷射光束L3之輸出亦可進行分斷，從而可減少消耗電力。 以上，對本發明之代表性之實施形態進行了說明，但本發明並非必須僅特定於上述實施形態。例如，上述實施例係於藉由像差雷射光束之照射而於整個分斷預定線形成改質層後，對改質層照射CO2 雷射光束等分斷用雷射光束而進行分斷；但亦可追隨於像差雷射光束之照射而照射分斷用雷射光束。此外，本發明可於達成本發明之目的且不脫離發明申請專利範圍之範圍內適當地進行修正及變更。 [產業上之可利用性] 本發明可於對玻璃基板等脆性材料基板進行分斷時加以利用。Hereinafter, the details of the present invention will be described based on the embodiment shown in the figure. Fig. 1 is a diagram showing a scribing device (breaking device) A of the present invention. In the scribing device A, the left and right pillars 1 and 1 are provided with a horizontal beam (beam) 3 with guides 2 along the X direction. The guide 2 of the beam 3 is equipped with a scribing head 5 equipped with an aberration laser beam emitting member 4 and a laser beam emitting member for breaking so as to be movable in the X direction by a motor M1 6 and the cooling member (cooling medium) 7 of the scoring head 8. The platform 9 on which the brittle material substrate W to be processed is placed and held by suction is held on the platen 11 through the rotating mechanism 10 with the longitudinal axis as the fulcrum. The platen 11 is formed as a screw that can be driven by a motor M2 12 and move in the Y direction (front and back direction in FIG. 1). Furthermore, in this embodiment, the aberration laser beam light emitting member 4 and the splitting laser beam light emitting member 6 are separately installed on different scoring heads 5 and 8, but they can also be installed on a common scoring head . As shown in FIG. 2, the aberration laser beam light-emitting member 4 installed on the scribing head 5 has: a light source 4a whose output pulse width (pulse duration) is 100 picoseconds or less, preferably 50 picoseconds or less (usually 1 picosecond or more), here is a 15 picosecond pulsed laser beam; light modulator 4b, which splits the pulsed laser beam from the light source 4a into burst pulse trains And the aberration generating lens 4c, which causes the laser beam L1 emitted from the light modulator 4b to generate aberration. Furthermore, for the light source 4a, a near-infrared laser with a wavelength of 0.7~2.5 μm can be used. In addition, the light modulator 4b that emits the burst pulse train of the pulsed laser beam is disclosed in, for example, Japanese Patent Publication No. 2012-515450, where a known light modulator is used to emit the pulsed laser beam. For the burst, the detailed description is omitted. The aberration-generating lens 4c used to generate aberrations in the laser beam L1 emitted from the light modulator 4b is not particularly limited. Here, a plano-convex lens is used. The plano-convex lens disperses the focal point in the optical axis direction so that the The passing laser beam L1 is focused on a discrete focal point in the axial direction to produce aberrations. The laser beam L1 passing through the plano-convex lens becomes a focally dispersed aberration laser beam L2. By entering the laser beam L1 from the plane side of the plano-convex lens, the aberration laser beam L2 can be emitted from the convex side. The aberration laser beam L2 generated from the burst pulse train of the pulsed laser beam is shown in Fig. 3(a), which can be formed by focusing by the aberration generating lens 4c and forming at each focal point f to accumulate laser energy. The long and narrow high energy distribution area F is formed. Fig. 3(b) shows a schematic enlarged view of the high energy distribution region F. By forming such a high energy distribution area F, when irradiating the surface of a brittle material substrate W as the object to be processed, for example, a soda glass substrate, it is possible to process from the irradiated surface of the substrate W to the deep inside The modified layer with weakened strength. For the breaking laser beam L3 (refer to FIG. 6) emitted from the breaking laser beam light emitting member 6 mounted on the other scribing head 8, the intensity can be changed by the compressive force generated by heating The laser beam is completely broken by the weak modified layer. In this embodiment, a CO 2 laser beam with a wavelength of 10.6 μm is used as the splitting laser beam L3. Furthermore, an IR (Infrared) laser beam with a wavelength of 0.7-10 μm can also be used instead of the CO 2 laser beam. In addition, as the refrigerant sprayed from the cooling member 7, cooling air, sprayed water, or the like can be used. Next, referring to FIGS. 1 to 6, the method of breaking the brittle material substrate W of the present invention using the scribing device A will be described below. In this embodiment, a soda glass substrate with a thickness of 1.8 mm is used as the brittle material substrate W to be processed. First, as shown in FIGS. 5 and 6, a substrate W is placed on the platform 9, and the substrate W is irradiated with the aberration laser beam L2 emitted from the self-aberration laser beam light emitting member 4, and the scribing head 5 is included on the other side. And the aberration laser beam light emitting member moving mechanism of the guide 2 moves the aberration laser beam L2 along the predetermined breaking line S of the substrate W. At this time, the high-energy distribution area F of the focusing part of the aberration laser beam L2 is made the middle position of the thickness of the substrate W. Thereby, the modified layer (usually a modified layer with weakened strength) can be processed along the predetermined breaking line S from the irradiated surface of the substrate W to the deep inside. Here, an example of a preferable implementation condition of the aberration laser beam L2 (burst pulse train of the pulse laser beam) including the burst pulse is shown below. Laser output: 19.4 W Repetition frequency: 32.5 kHz Pulse width: 15 picoseconds Pulse interval (irradiation interval of the laser pulse on the substrate): 4 μm Burst pulse: 4 pulses Pulse energy: 155 μJ/1 Burst pulse scanning speed: 130 mm/s Moreover, the processing depth and processing state can be easily controlled by adjusting the laser output, repetition frequency, pulse width, burst number or pulse interval, aberration, etc. . Figure 4 is a schematic diagram showing a burst of pulsed laser beams. It forms 4 minute pulses p divided by a pulsed laser beam, and irradiates the minute pulses p intermittently in units of repetition frequency. After processing the modified layer of weakened strength on the substrate W along the planned breaking line S in the above manner, as shown in FIG. 6(a), one side is divided from the cutting laser beam light emitting member 6 to the processed modified layer. The planned breaking line S irradiates the CO 2 laser beam L3, and the CO 2 laser beam L3 is moved along the planned breaking line S by the moving mechanism of the cutting laser beam light-emitting member including the scoring head 8 and the guide 2 . At the same time, the refrigerant is sprayed from the cooling member 7 toward the front side of the irradiation point P of the CO 2 laser beam L3 in the traveling direction. FIG. 6(b) is a plan view of a part of the irradiation point P of the CO 2 laser beam L3 with respect to the substrate W, and the cooling area cooled by the cooling member 7 is indicated by the symbol B. The cooling area B is formed by cooling the front side of the irradiation point P of the laser beam in the traveling direction by the scattering of the refrigerant (preferably centering on the front side of the traveling direction of the irradiation point P and surrounding the periphery of the irradiation point P) . By irradiating the CO 2 laser beam L3 along the planned breaking line S after processing the modified layer in this way, the CO 2 laser beam L3 is moved, and the substrate W is completely moved along the planned breaking line S by thermal stress. Break off. At this time, the front side of the irradiation point P of the CO 2 laser beam L3 in the traveling direction is cooled (preferably centered on the front side of the traveling direction of the irradiation point P, the periphery of the irradiation point P is cooled), so it can be effectively Increase the thermal stress generated at the location of the irradiation point P, that is, the compressive stress generated by heating and the tensile stress generated by cooling, so that the front side of the laser traveling direction as described in FIG. 8 is not generated. The crack K effectively breaks only the part of the irradiation point P. Therefore, even when the planned breaking line S is a quadrilateral shape with a circular arc S1 at the corners as shown in FIG. 9(a), or when it is divided in a straight line as shown in FIG. 9(b) When there is an arc-shaped convex part S2 in the middle of the predetermined line S, it may be broken along without the crack K1 extending forward in the tangential direction of the arc or the crack K2 that crosses the bottom edge of the convex part S2 The predetermined line S is completely broken. In addition, by cooling the front side of the irradiation point P of the CO 2 laser beam L3 in the traveling direction (preferably cooling the periphery of the irradiation point P with the front side in the traveling direction as the center), the thermal stress can be increased, so even if the CO 2 is reduced The output of the laser beam L3 can also be disconnected, thereby reducing power consumption. As mentioned above, although the representative embodiment of this invention was described, this invention is not necessarily limited only to the said embodiment. For example, in the above-mentioned embodiment, a modified layer is formed on the entire predetermined breaking line by irradiation of an aberration laser beam, and then the modified layer is irradiated with a CO 2 laser beam or other laser beam for breaking. ; But it can also follow the irradiation of the aberration laser beam and irradiate the splitting laser beam. In addition, the present invention can be appropriately modified and changed within the scope of achieving the purpose of the invention without departing from the scope of the invention patent application. [Industrial Applicability] The present invention can be used when breaking brittle material substrates such as glass substrates.

1‧‧‧支柱2‧‧‧導件3‧‧‧樑4‧‧‧像差雷射光束發光構件4a‧‧‧光源4b‧‧‧光調變器4c‧‧‧像差產生透鏡5‧‧‧刻劃頭6‧‧‧分斷用雷射光束發光構件7‧‧‧冷卻構件(冷卻介質)8‧‧‧刻劃頭9‧‧‧平台10‧‧‧旋動機構11‧‧‧台盤12‧‧‧螺桿A‧‧‧刻劃裝置(分斷裝置)B‧‧‧冷卻區域f‧‧‧焦點部F‧‧‧高能量分佈區域K‧‧‧裂痕K1‧‧‧龜裂K2‧‧‧龜裂L1‧‧‧雷射光束L2‧‧‧像差雷射光束L3‧‧‧分斷用雷射光束(CO2雷射光束)M1‧‧‧馬達M2‧‧‧馬達p‧‧‧微細脈衝P‧‧‧分斷用雷射光束之照射點S‧‧‧分斷預定線S1‧‧‧圓弧S2‧‧‧凸部W‧‧‧脆性材料基板1‧‧‧Support 2‧‧‧Guide 3‧‧‧Beam 4‧‧‧Aberration laser beam light emitting member 4a‧‧‧Light source 4b‧‧‧Light modulator 4c‧‧‧Aberration generating lens 5‧ ‧‧Scribing head 6‧‧‧Laser beam light-emitting member for breaking 7‧‧‧Cooling member (cooling medium) 8‧‧‧Scribing head 9‧‧‧Platform 10‧‧‧Rotating mechanism 11‧‧‧ Plate 12‧‧‧Screw A‧‧‧Scribing device (breaking device) B‧‧‧Cooling area f‧‧‧Focus part F‧‧‧High energy distribution area K‧‧‧Crack K1‧‧‧Crack K2‧‧‧Crack L1‧‧‧Laser beam L2‧‧‧Aberration laser beam L3‧‧‧Laser beam for breaking (CO 2 laser beam) M1‧‧‧Motor M2‧‧‧Motor p ‧‧‧Fine pulse P‧‧‧The irradiation point of the laser beam for breaking S‧‧‧The planned breaking line S1‧‧‧Arc S2‧‧‧Protrusions W‧‧‧Brittle material substrate

圖1係本發明之分斷裝置之概略性之說明圖。 圖2係表示本發明之像差雷射光束發光構件之光學系統之方塊圖。 圖3(a)、(b)係表示像差雷射光束之聚焦狀態之放大說明圖。 圖4係表示脈衝雷射光束之突發脈衝之分佈之概念圖。 圖5係表示本發明之分斷加工步驟之第一階段之說明圖。 圖6(a)、(b)係表示本發明之分斷加工步驟之第二階段之說明圖。 圖7(a)、(b)係表示分斷預定線之形狀之一例之俯視圖。 圖8係用以說明於利用CO2 雷射光束進行分斷時的裂痕之產生之俯視圖。 圖9(a)、(b)係用以說明圖7所示之分斷預定線上的龜裂之產生之俯視圖。Fig. 1 is a schematic explanatory diagram of the breaking device of the present invention. Fig. 2 is a block diagram showing the optical system of the aberration laser beam light emitting component of the present invention. 3(a) and (b) are enlarged explanatory diagrams showing the focusing state of aberration laser beams. Fig. 4 is a conceptual diagram showing the distribution of burst pulses of a pulsed laser beam. Fig. 5 is an explanatory diagram showing the first stage of the cutting process of the present invention. Fig. 6 (a) and (b) are explanatory diagrams showing the second stage of the cutting process steps of the present invention. 7(a) and (b) are plan views showing an example of the shape of the planned breaking line. Fig. 8 is a plan view for explaining the generation of cracks when the CO 2 laser beam is used for breaking. Figures 9(a) and (b) are top views for explaining the generation of cracks on the predetermined breaking line shown in Figure 7;

1‧‧‧支柱 1‧‧‧Pillars

2‧‧‧導件 2‧‧‧Guide

3‧‧‧樑 3‧‧‧Liang

4‧‧‧像差雷射光束發光構件 4‧‧‧Aberration laser beam light emitting component

5‧‧‧刻劃頭 5‧‧‧Scribing head

6‧‧‧分斷用雷射光束發光構件 6‧‧‧Laser beam light-emitting component for breaking

7‧‧‧冷卻構件(冷卻介質) 7‧‧‧Cooling components (cooling medium)

8‧‧‧刻劃頭 8‧‧‧Scribing head

9‧‧‧平台 9‧‧‧Platform

10‧‧‧旋動機構 10‧‧‧Swivel mechanism

11‧‧‧台盤 11‧‧‧Tray

12‧‧‧螺桿 12‧‧‧Screw

A‧‧‧刻劃裝置(分斷裝置) A‧‧‧Scribing device (breaking device)

M1‧‧‧馬達 M1‧‧‧Motor

M2‧‧‧馬達 M2‧‧‧Motor

W‧‧‧脆性材料基板 W‧‧‧Brittle material substrate

Claims (6)

一種脆性材料基板之分斷裝置，其包含：平台，其載置脆性材料基板；像差雷射光束發光構件，其經由產生像差之像差產生透鏡而將自光源出射之包含脈衝雷射光束之突發脈衝之雷射光束形成為像差雷射光束；像差雷射光束發光構件移動機構，其使上述像差雷射光束發光構件沿上述脆性材料基板之分斷預定線相對性地移動；分斷用雷射光束發光構件，其沿被照射上述像差雷射光束後之上述分斷預定線照射分斷用雷射光束；冷媒噴射構件，其冷卻上述分斷用雷射光束之照射點之雷射光束行進方向前方側；及分斷用雷射光束發光構件移動機構，其使上述分斷用雷射光束發光構件及冷媒噴射構件沿上述脆性材料基板之分斷預定線相對性地移動；且配置於上述平台左右之支柱設有具備導件之水平之樑，於上述導件以可沿導件移動之方式安裝有具備上述像差雷射光束發光構件之刻劃頭、與具備分斷用雷射光束發光構件及冷卻構件之刻劃頭，上述像差雷射光束係波長為0.7~2.5μm之近紅外雷射光束，上述分斷用雷射光束係CO2雷射光束。 A breaking device for a brittle material substrate, comprising: a platform on which the brittle material substrate is placed; an aberration laser beam light emitting component, which emits a pulsed laser beam emitted from a light source through aberration generating lens The burst laser beam is formed into an aberration laser beam; an aberration laser beam light emitting member moving mechanism which makes the aberration laser beam light emitting member relatively move along the predetermined breaking line of the brittle material substrate The laser beam light-emitting member for breaking, which irradiates the laser beam for breaking along the predetermined line of breaking after being irradiated with the aberration laser beam; the refrigerant injection member, which cools the irradiation of the laser beam for breaking The forward side of the laser beam traveling direction of the point; and the moving mechanism of the laser beam light-emitting member for breaking, which makes the laser beam light-emitting member for breaking and the refrigerant injection member relatively along the planned breaking line of the brittle material substrate And the pillars arranged on the left and right sides of the platform are provided with horizontal beams with guides, and the scribing head with the aberration laser beam emitting member is mounted on the guides in a movable manner along the guides, and with For the scoring head of the cutting laser beam light-emitting member and the cooling member, the aberration laser beam is a near-infrared laser beam with a wavelength of 0.7 ~ 2.5 μm, and the laser beam for cutting is a CO 2 laser beam. 如請求項1之脆性材料基板之分斷裝置，其中上述冷媒噴射構件冷卻上述分斷用雷射光束之照射點之包含雷射光束行進方向前方側之周邊。 The breaking device for a brittle material substrate according to claim 1, wherein the refrigerant injection member cools the periphery of the irradiation point of the breaking laser beam including the front side in the traveling direction of the laser beam. 一種脆性材料基板之分斷方法，其特徵在於：其係使用如請求項1之脆性材料基板之分斷裝置者，使包含脈衝雷射光束之突發脈衝之雷射光束透過產生像差之像差產生透鏡而形成為像差雷射光束，沿脆性材料基板之分斷預定線掃描上述像差雷射光束而形成改質層，沿該改質層照射分斷用雷射光束，並追隨該分斷用雷射光束而將該分斷用雷射光束之照射點之行進方向前方側冷卻，藉此沿分斷預定線分斷上述脆性材料基板。 A method for breaking a brittle material substrate, characterized in that it uses a breaking device for a brittle material substrate such as claim 1 to transmit a laser beam containing a burst pulse of a pulsed laser beam to produce aberration images The aberration generating lens is formed as an aberration laser beam, and the aberration laser beam is scanned along the predetermined line of the brittle material substrate to form a modified layer, and the laser beam for breaking is irradiated along the modified layer and follows the The cutting laser beam cools the front side of the irradiated point of the cutting laser beam in the traveling direction, thereby cutting the brittle material substrate along the planned breaking line. 如請求項3之脆性材料基板之分斷方法，其係藉由吹送冷卻介質而冷卻上述分斷用雷射光束之照射點之包含行進方向前方側之周邊。 The method for cutting a brittle material substrate according to claim 3, which cools the periphery of the irradiation point of the laser beam for cutting, including the front side in the traveling direction, by blowing a cooling medium. 如請求項3或4之脆性材料基板之分斷方法，其中上述像差雷射光束之光源係波長為0.7~2.5μm之近紅外雷射，且使用脈衝寬度為100微微秒以下之雷射光束之突發脈衝。 For example, the method for breaking the brittle material substrate of claim 3 or 4, wherein the light source of the aforementioned aberration laser beam is a near-infrared laser with a wavelength of 0.7~2.5μm, and a laser beam with a pulse width of 100 picoseconds or less is used The burst pulse. 如請求項3或4之脆性材料基板之分斷方法，其中上述分斷用雷射光束係波長為10.6μm之CO2雷射光束。The method for breaking a brittle material substrate according to claim 3 or 4, wherein the laser beam for breaking is a CO 2 laser beam with a wavelength of 10.6 μm.
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