TWI716589B - Breaking method and breaking device of brittle material substrate - Google Patents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/0007—Applications not otherwise provided for
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/54—Glass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
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Abstract
本發明提供一種利用使雷射光束產生像差而聚焦所得之像差雷射光束與分斷用雷射光束之脆性材料基板之分斷方法及分斷裝置。 本發明之脆性材料基板之分斷方法係使包含脈衝雷射光束之突發脈衝之雷射光束L1透過產生像差之像差產生透鏡4c而形成為像差雷射光束L2,沿脆性材料基板W之分斷預定線S掃描該像差雷射光束L2而形成改質層,沿該改質層照射分斷用雷射光束L3,並且追隨於該分斷用雷射光束L而冷卻該分斷用雷射光束L3之照射點P之行進方向前方側,從而沿分斷預定線S分斷脆性材料基板W。The present invention provides a method and device for breaking a brittle material substrate using aberration laser beams and breaking laser beams obtained by focusing the laser beams with aberrations. The breaking method of the brittle material substrate of the present invention is to make the laser beam L1 including the burst pulse of the pulse laser beam pass through the aberration generating lens 4c to generate the aberration laser beam L2, along the brittle material substrate The breaking plan line S of W scans the aberration laser beam L2 to form a modified layer, irradiates the breaking laser beam L3 along the modified layer, and follows the breaking laser beam L to cool the fraction The cutting laser beam L3 is irradiated on the front side of the advancing direction of the point P, thereby cutting the brittle material substrate W along the planned cutting line S.
Description
本發明係關於一種使用分斷用雷射光束之玻璃等脆性材料基板之分斷方法及分斷裝置。The invention relates to a method and a device for breaking a brittle material substrate such as glass using a laser beam for breaking.
自先前以來,便利用照射對基板具有透過性之(透明之)脈衝雷射光束而形成內部改質層之被稱為「隱形切割」(Stealth Dicing)的雷射加工技術(參照專利文獻1)。該雷射加工技術係藉由如下方式形成改質層,即,將焦點對準所應分斷之區域之基板內部照射脈衝雷射光束而使其改質,並沿切割道(分斷預定線)連續地進行該改質。然後,藉由沿強度降低之改質層施加外力而進行分斷。 又,近年來不斷推進脈衝寬度(脈衝持續時間)為奈秒(ns)、微微秒(ps)之分斷用雷射光束之研究及開發,結果仍是利用雷射加工技術,該雷射加工技術係照射以由各個脈衝分割而成之突發脈衝串(突發脈衝光)之形式振盪之被稱為「突發脈衝模式」的分斷用雷射光束而進行基板之內部改質(參照專利文獻2)。 即,使用對基板具有透過性之波長之雷射,以成為其脈衝雷射光束之重複頻率及脈衝寬度適於加工之分斷用雷射光束之方式進行調整,將聚光點對準基板內部進行照射,藉此可不發生剝蝕而形成改質層。該雷射加工技術係使各個脈衝以分割成包含複數個(例如2~10個)微細脈衝寬度之突發脈衝光(突發脈衝串)之狀態振盪而照射,並非直接照射具有經調整後之脈衝寬度之分斷用雷射光束。 例如,於藉由脈衝光產生設備以10 μJ之脈衝光能產生重複頻率為100 kHz(以10 μ秒(μs)週期產生脈衝)且脈衝寬度為200 ns之分斷用雷射光束時,藉由突發發脈衝光形成設備使該分斷用雷射光束以分割成微細脈衝寬度為1 ns之10個突發脈衝光(突發脈衝串)之狀態振盪。於該情形時,突發脈衝光之峰值功率理論上平均為(10 μJ/10個)/1 ns=1 kW,但各突發脈衝光之峰值功率可彼此相同,亦可彼此不同(例如,使各突發脈衝光之峰值功率依序變大、依序變小等)。 然後,使對矽基板具有透過性之波長(例如1064 nm)且適於改質之脈衝寬度之脈衝雷射光束以此種包含複數個微細脈衝寬度之突發脈衝光的形式振盪,藉由聚光器將突發脈衝光之聚光點對準基板之厚度方向中央部,而以「突發脈衝模式」對矽基板進行照射。藉此,揭示有如下情形,即,可抑制朝向被加工物之雷射入射面之相反面側的逃逸光對相反面造成之損傷,從而可抑制對預先形成於該相反面上之器件之損傷。 又,作為利用分斷用雷射光束之突發脈衝串(突發脈衝光)將基板劈開之加工方法,於其他文獻中揭示有於基板內形成「光絲」而進行加工之雷射加工技術。即,於專利文獻3中揭示有如下情形,即,將藉由物鏡而聚焦之聚焦雷射光束照射至基板,於基板內形成長度為數百微米或數毫米、被稱為「雷射絲」(以下簡稱為「光絲」)、使雷射能量累積之狹長的通道,平移基板而呈直線狀或曲線狀移動光絲,藉此刻劃光絲軌跡而進行加工(特別是0035、0039段)。於該文獻中,作為可應用該加工方法之基板材料,記載有玻璃、半導體、透明陶瓷、聚合物、透明導體、寬帶隙玻璃、水晶、結晶石英、金剛石及藍寶石。 又,於專利文獻4中揭示有如下改良方法,即,進一步於空間上擴張上述專利文獻3中所記載之「雷射絲」,而於空間上較長地形成相同材質之光絲。 根據該文獻,於專利文獻3中揭示有如下情形,即,包含超高速脈衝雷射光束之突發脈衝之入射雷射光束藉由「聚焦透鏡」於基板內部聚焦,從而於基板內部可形成數百微米左右之光絲。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利第3408805號公報 [專利文獻2]日本專利特開2014-104484號公報 [專利文獻3]日本專利特表2013-536081號公報 [專利文獻4]日本專利特開2015-037808號公報Since the past, a laser processing technology called "Stealth Dicing" (see Patent Document 1) has been used to form an internal modified layer by irradiating a (transparent) pulsed laser beam that is transparent to the substrate. . The laser processing technology is to form the modified layer by focusing on the area to be divided and irradiating the inside of the substrate with a pulsed laser beam to modify it, and then along the cutting path (pre-cutting line) ) This modification is continuously performed. Then, the breaking is performed by applying an external force along the modified layer of reduced strength. In addition, in recent years, the research and development of laser beams for breaking the pulse width (pulse duration) in nanoseconds (ns) and picoseconds (ps) have been continuously promoted. As a result, laser processing technology is still used. The technology is to irradiate a laser beam called "burst mode" that oscillates in the form of bursts (burst pulses) formed by dividing each pulse to perform internal modification of the substrate (see Patent Document 2). That is, use a laser with a wavelength that is transparent to the substrate to adjust the repetition frequency and pulse width of the pulsed laser beam to be suitable for processing. The laser beam is adjusted to align the condensing point inside the substrate. By irradiating, the modified layer can be formed without erosion. The laser processing technology oscillates each pulse in a state of being divided into bursts of light (burst pulse trains) containing a plurality of (e.g., 2-10) minute pulse widths, instead of direct irradiation. Laser beam is used for pulse width division. For example, when using a pulsed light generator to generate a pulsed light energy of 10 μJ with a repetition frequency of 100 kHz (pulses are generated at a period of 10 μs (μs)) and a pulse width of 200 ns for a splitting laser beam, borrow The laser beam for breaking is oscillated by a burst light forming device in a state of being divided into 10 bursts (bursts) with a fine pulse width of 1 ns. In this case, the peak power of the burst light theoretically averages (10 μJ/10 pieces)/1 ns = 1 kW, but the peak power of each burst light can be the same or different from each other (for example, Make the peak power of each burst light increase and decrease sequentially, etc.). Then, a pulsed laser beam with a wavelength (for example, 1064 nm) that is transparent to the silicon substrate and has a pulse width suitable for modification is oscillated in the form of burst pulse light including a plurality of fine pulse widths, and by focusing The optical device aligns the condensing point of the burst light at the center of the substrate in the thickness direction, and irradiates the silicon substrate in a "burst pulse mode". By this, it is disclosed that it is possible to suppress the damage to the opposite surface caused by the escaped light toward the opposite surface of the laser incident surface of the workpiece, thereby suppressing damage to the device previously formed on the opposite surface . In addition, as a processing method for splitting a substrate using a burst of laser beams for breaking (burst pulse light), other documents disclose laser processing techniques that form "light filaments" in the substrate for processing. . That is,
[發明所欲解決之問題] 藉由上述專利文獻3、4中所示之「雷射絲」將形成強度變弱之改質層後之玻璃基板分斷時,採用藉由沿改質層按壓切斷桿(break bar)使基板機械性地撓曲而進行分斷之方法。此時,於形成改質層後之分斷預定線為直線之情形時,可沿分斷預定線將基板徹底地分斷,但於如圖7(a)所示般分斷預定線S為於角部具有圓弧S1之四邊形形狀之情形時、或如圖7(b)所示般於直線狀之分斷預定線S之中間具有圓弧狀凸部S2之情形時,難以使圓弧S1或凸部S2之區域沿分斷預定線S均勻地撓曲,從而無法徹底地加以分斷。 因此,亦可考慮將CO2
雷射照射至改質層,利用因加熱而產生之壓縮應力進行分斷的方法,以此代替利用切斷桿進行之機械分斷方法。 然而,於利用CO2
雷射進行之切斷中,存在如下傾向,即,於將雷射光束照射至改質層而進行掃描時,如圖8所示,於較雷射照射點P更靠雷射行進方向前方側前延產生較小之裂痕K。該現象於分斷預定線S為直線之情形時並不存在問題,但於分斷預定線S為圓弧之情形時,裂痕於圓弧之切線方向上前延,因此如圖9(a)所示般龜裂K1產生前延等情況而無法徹底地加以分斷。特別是於圓弧之半徑為5 mm以下之情形時,分斷變得更為困難。又,於如圖9(b)所示般於直線之分斷預定線S之中間具有圓弧狀凸部S2之情形時,存在以橫切凸部S2之底邊之方式產生龜裂K2等而導致良率變差等問題。 因此,本發明之目的在於提供一種可利用包含脈衝雷射光束之突發脈衝之像差雷射光束、及CO2
雷射等分斷用雷射光束,精度良好且徹底地分斷脆性材料基板之分斷方法及分斷裝置。 [解決問題之技術手段] 為了達成上述目的而完成之本發明之脆性材料基板之分斷方法如下:使包含脈衝雷射光束之突發脈衝之雷射光束透過產生像差之像差產生透鏡而形成為像差雷射光束,沿脆性材料基板之分斷預定線掃描上述像差雷射光束而形成改質層(通常為強度降低之改質層),沿該改質層照射分斷用雷射光束,並且追隨於該分斷用雷射光束而冷卻(例如,藉由吹送冷卻介質而冷卻)該分斷用雷射光束之照射點之行進方向前方側(較佳為包含行進方向前方側之周邊),藉此沿分斷預定線分斷上述脆性材料基板。 於本發明之分斷方法中,較佳為將像差雷射光束聚焦程度最高之最高聚焦部對準脆性材料基板之厚度之中間位置而進行掃描。此處,像差雷射光束之最高聚焦部係指於沿像差雷射光束之照射方向測定光束分佈(強度分佈)時,光束分佈之峰值功率最高之位置(沿像差雷射光束之照射方向之位置)。又,作為分斷用雷射光束,較佳為波長為10.6 μm之CO2
雷射光束、或波長為1064 nm之Nd;YAG(Neodymium-doped Yttrium Aluminium Garnet,摻釹釔鋁石榴石)雷射光束。 又,自另一觀點而完成之本發明之脆性材料基板之分斷裝置構成為包含:平台,其載置脆性材料基板;像差雷射光束發光構件,其經由產生像差之像差產生透鏡而將自光源出射之包含脈衝雷射光束之突發脈衝之雷射光束形成為像差雷射光束;像差雷射光束發光構件移動機構,其使上述像差雷射光束發光構件沿上述脆性材料基板之分斷預定線相對性地移動;分斷用雷射光束發光構件,其沿被照射上述像差雷射光束後之上述分斷預定線照射分斷用雷射光束;冷媒噴射構件,其冷卻上述分斷用雷射光束之照射點之雷射光束行進方向前方側(較佳為包含行進方向前方側之周邊);及分斷用雷射光束發光構件移動機構,其使上述分斷用雷射光束發光構件及冷媒噴射構件沿上述脆性材料基板之分斷預定線相對性地移動。 [發明之效果] 本發明係如上所述般地構成,因此一面沿利用像差雷射光束而形成之改質層之線照射分斷用雷射光束一面使該分斷用雷射光束移動,藉此可沿分斷預定線完全分斷玻璃基板等脆性材料基板。此時,分斷用雷射光束之照射點之行進方向前方側得到冷卻(較佳為以行進方向前方側為中心而使照射點之周邊得到冷卻),因此可有效地提高於照射點之部位產生之熱應力、即因加熱而產生之壓縮應力及因冷卻而產生之拉伸應力,藉此可不產生雷射行進方向前方側之裂痕而有效地僅分斷照射點之部位。因此,即便分斷預定線為於角部具有圓弧之四邊形形狀、或為如於直線狀之分斷預定線之中途具有彎曲之凸部的複雜之形狀,亦具有如下效果,即,可不產生於圓弧之切線方向上前延之龜裂、或橫切凸部之底邊之龜裂等而沿分斷預定線徹底地進行分斷。 於本發明中,可為上述像差產生透鏡由平凸透鏡所形成。於該情形時,自平凸透鏡之平面側入射雷射光束,藉此可自凸面側出射像差雷射光束。 進而,於本發明中,亦可為上述像差雷射光束之光源係波長為0.7~2.5 μm(例如,Nd:YAG雷射之基諧波)之近紅外雷射,且使用脈衝寬度為100微微秒以下之雷射光束之突發脈衝。[Problem to be solved by the invention] When the glass substrate after the modified layer with weakened strength is formed by the "laser wire" shown in the above-mentioned
以下,基於圖中所示之實施例對本發明之詳細內容進行說明。 圖1係表示本發明之刻劃裝置(分斷裝置)A之圖。 於刻劃裝置A中,在左右之支柱1、1設置有具備沿X方向之導件2之水平之樑(橫樑)3。於該樑3之導件2,以可藉由馬達M1而於X方向上移動之方式安裝有具備像差雷射光束發光構件4之刻劃頭5、及具備分斷用雷射光束發光構件6與冷卻構件(冷卻介質)7之刻劃頭8。載置並吸附保持成為加工對象之脆性材料基板W之平台9係經由以縱軸為支點之旋動機構10而保持於台盤11上,台盤11形成為可藉由利用馬達M2驅動之螺桿12而於Y方向(圖1之前後方向)上移動。再者,於本實施例中,像差雷射光束發光構件4與分斷用雷射光束發光構件6係分開安裝於不同之刻劃頭5、8,但亦可安裝於共同之刻劃頭。 如圖2所示,安裝於刻劃頭5之像差雷射光束發光構件4具備:光源4a,其出射脈衝寬度(脈衝持續時間)為100微微秒以下、較佳為50微微秒以下(通常為1微微秒以上)、此處為15微微秒之脈衝雷射光束;光調變器4b,其使自該光源4a經振盪後之脈衝雷射光束以由其分割而成之突發脈衝串之集合的形式出射;及像差產生透鏡4c,其使自該光調變器4b出射之雷射光束L1產生像差。 再者,對於光源4a,可使用波長為0.7~2.5 μm之近紅外雷射。 又,關於出射脈衝雷射光束之突發脈衝串之光調變器4b,例如於日本專利特表2012-515450號公報中有所揭示,此處利用公知之光調變器出射脈衝雷射光束之突發脈衝串,對於詳細情況省略說明。 用以使自光調變器4b出射之雷射光束L1產生像差之像差產生透鏡4c並無特別限定,此處利用平凸透鏡,該平凸透鏡係使焦點於光軸方向上分散,使所通過之雷射光束L1以聚結於軸向上離散之焦點之方式聚焦而使其產生像差。通過該平凸透鏡之雷射光束L1成為焦點分散之像差雷射光束L2。藉由自平凸透鏡之平面側入射雷射光束L1,可自凸面側出射像差雷射光束L2。 自脈衝雷射光束之突發脈衝串產生之像差雷射光束L2如圖3(a)所示,可藉由利用像差產生透鏡4c聚焦,而形成於各焦點部f累積雷射能量而成之狹長之高能量分佈區域F。圖3(b)表示將該高能量分佈區域F模式性地放大之圖。藉由形成此種高能量分佈區域F,於對作為加工對象物之脆性材料基板W、例如鈉玻璃基板之表面進行照射時,可自加工對象基板W之被照射面至內部深處地,加工強度變弱之改質層。 對於自安裝於另一刻劃頭8之分斷用雷射光束發光構件6出射之分斷用雷射光束L3(參照圖6),可使用能藉由因加熱而產生之壓縮力將強度變弱之改質層完全分斷之雷射光束。於本實施例中,使用波長為10.6 μm之CO2
雷射光束作為該分斷用雷射光束L3。再者,亦可使用波長為0.7~10 μm之IR(Infrared,紅外線)雷射光束等代替CO2
雷射光束。又,作為自冷卻構件7噴射之冷媒,可使用冷卻空氣或噴霧狀之水等。 其次,一面參照圖1~6,一面於以下對使用上述刻劃裝置A之本發明之脆性材料基板W之分斷方法進行說明。於本實施例中,使用厚度為1.8 mm之鈉玻璃基板作為成為加工對象之脆性材料基板W。 首先,如圖5、圖6所示,於平台9上載置基板W,一面向基板W照射自像差雷射光束發光構件4出射之像差雷射光束L2,一面藉由包含刻劃頭5及導件2之像差雷射光束發光構件移動機構使該像差雷射光束L2沿基板W之分斷預定線S移動。此時,使像差雷射光束L2之聚焦部之高能量分佈區域F成為基板W之厚度之中間位置。藉此,可自基板W之被照射面至內部深處地,沿分斷預定線S加工改質層(通常為強度變弱之改質層)。 此處,於以下表示包含突發脈衝之像差雷射光束L2(脈衝雷射光束之突發脈衝串)之較佳之實施條件的一例。 雷射輸出:19.4 W 重複頻率:32.5 kHz 脈衝寬度:15微微秒 脈衝間隔(雷射脈衝於基板上之照射光點之照射間隔):4 μm 突發脈衝:4脈衝 脈衝能量:155 μJ/1突發脈衝 掃描速度:130 mm/s 再者,加工深度及加工狀態可藉由上述雷射輸出、重複頻率、脈衝寬度、突發脈衝數或脈衝間隔、像差等之調整而容易地加以控制。 圖4係表示脈衝雷射光束之突發脈衝串之模式圖。形成由一個一個脈衝雷射光束分割而成之4個微細脈衝p,以重複頻率為單位而間歇性地照射該等微細脈衝p。 於以上述方式沿分斷預定線S對基板W加工強度變弱之改質層後,如圖6(a)所示,一面自分斷用雷射光束發光構件6向加工改質層後之分斷預定線S照射CO2
雷射光束L3,一面藉由包含刻劃頭8及導件2之分斷用雷射光束發光構件移動機構使該CO2
雷射光束L3沿分斷預定線S移動。同時,自冷卻構件7向CO2
雷射光束L3之照射點P之行進方向前方側噴射冷媒。圖6(b)係俯視相對於基板W之、CO2
雷射光束L3之照射點P之部位的俯視圖,且以符號B表示由冷卻構件7加以冷卻之冷卻區域。冷卻區域B係以藉由冷媒之飛散而冷卻雷射光束之照射點P之行進方向前方側(較佳為以照射點P之行進方向前方側為中心而包圍照射點P之周邊)之方式形成。 藉由以此方式一面沿加工改質層後之分斷預定線S照射CO2
雷射光束L3一面使該CO2
雷射光束L3移動,而利用熱應力使基板W沿分斷預定線S完全分斷。此時,CO2
雷射光束L3之照射點P之行進方向前方側得到冷卻(較佳為以照射點P之行進方向前方側為中心而使照射點P之周邊得到冷卻),因此可有效地提高於照射點P之部位產生之熱應力、即因加熱而產生之壓縮應力及因冷卻而產生之拉伸應力,藉此可不產生如之前於圖8中所述之雷射行進方向前方側之裂痕K而有效地僅分斷照射點P之部位。因此,即便例如於如圖9(a)所示般分斷預定線S為於角部具有圓弧S1之四邊形形狀之情形時、或如圖9(b)所示般於直線狀之分斷預定線S之中間具有圓弧狀凸部S2之情形時,亦可不產生於圓弧之切線方向上前延之龜裂K1、或橫切凸部S2之底邊之龜裂K2而沿分斷預定線S徹底地進行分斷。 又,藉由冷卻CO2
雷射光束L3之照射點P之行進方向前方側(較佳為以照射點P之行進方向前方側為中心而冷卻其周邊)可提高熱應力,因此即便降低CO2
雷射光束L3之輸出亦可進行分斷,從而可減少消耗電力。 以上,對本發明之代表性之實施形態進行了說明,但本發明並非必須僅特定於上述實施形態。例如,上述實施例係於藉由像差雷射光束之照射而於整個分斷預定線形成改質層後,對改質層照射CO2
雷射光束等分斷用雷射光束而進行分斷;但亦可追隨於像差雷射光束之照射而照射分斷用雷射光束。此外,本發明可於達成本發明之目的且不脫離發明申請專利範圍之範圍內適當地進行修正及變更。 [產業上之可利用性] 本發明可於對玻璃基板等脆性材料基板進行分斷時加以利用。Hereinafter, the details of the present invention will be described based on the embodiment shown in the figure. Fig. 1 is a diagram showing a scribing device (breaking device) A of the present invention. In the scribing device A, the left and
1‧‧‧支柱2‧‧‧導件3‧‧‧樑4‧‧‧像差雷射光束發光構件4a‧‧‧光源4b‧‧‧光調變器4c‧‧‧像差產生透鏡5‧‧‧刻劃頭6‧‧‧分斷用雷射光束發光構件7‧‧‧冷卻構件(冷卻介質)8‧‧‧刻劃頭9‧‧‧平台10‧‧‧旋動機構11‧‧‧台盤12‧‧‧螺桿A‧‧‧刻劃裝置(分斷裝置)B‧‧‧冷卻區域f‧‧‧焦點部F‧‧‧高能量分佈區域K‧‧‧裂痕K1‧‧‧龜裂K2‧‧‧龜裂L1‧‧‧雷射光束L2‧‧‧像差雷射光束L3‧‧‧分斷用雷射光束(CO2雷射光束)M1‧‧‧馬達M2‧‧‧馬達p‧‧‧微細脈衝P‧‧‧分斷用雷射光束之照射點S‧‧‧分斷預定線S1‧‧‧圓弧S2‧‧‧凸部W‧‧‧脆性材料基板1‧‧‧
圖1係本發明之分斷裝置之概略性之說明圖。 圖2係表示本發明之像差雷射光束發光構件之光學系統之方塊圖。 圖3(a)、(b)係表示像差雷射光束之聚焦狀態之放大說明圖。 圖4係表示脈衝雷射光束之突發脈衝之分佈之概念圖。 圖5係表示本發明之分斷加工步驟之第一階段之說明圖。 圖6(a)、(b)係表示本發明之分斷加工步驟之第二階段之說明圖。 圖7(a)、(b)係表示分斷預定線之形狀之一例之俯視圖。 圖8係用以說明於利用CO2 雷射光束進行分斷時的裂痕之產生之俯視圖。 圖9(a)、(b)係用以說明圖7所示之分斷預定線上的龜裂之產生之俯視圖。Fig. 1 is a schematic explanatory diagram of the breaking device of the present invention. Fig. 2 is a block diagram showing the optical system of the aberration laser beam light emitting component of the present invention. 3(a) and (b) are enlarged explanatory diagrams showing the focusing state of aberration laser beams. Fig. 4 is a conceptual diagram showing the distribution of burst pulses of a pulsed laser beam. Fig. 5 is an explanatory diagram showing the first stage of the cutting process of the present invention. Fig. 6 (a) and (b) are explanatory diagrams showing the second stage of the cutting process steps of the present invention. 7(a) and (b) are plan views showing an example of the shape of the planned breaking line. Fig. 8 is a plan view for explaining the generation of cracks when the CO 2 laser beam is used for breaking. Figures 9(a) and (b) are top views for explaining the generation of cracks on the predetermined breaking line shown in Figure 7;
1‧‧‧支柱 1‧‧‧Pillars
2‧‧‧導件 2‧‧‧Guide
3‧‧‧樑 3‧‧‧Liang
4‧‧‧像差雷射光束發光構件 4‧‧‧Aberration laser beam light emitting component
5‧‧‧刻劃頭 5‧‧‧Scribing head
6‧‧‧分斷用雷射光束發光構件 6‧‧‧Laser beam light-emitting component for breaking
7‧‧‧冷卻構件(冷卻介質) 7‧‧‧Cooling components (cooling medium)
8‧‧‧刻劃頭 8‧‧‧Scribing head
9‧‧‧平台 9‧‧‧Platform
10‧‧‧旋動機構 10‧‧‧Swivel mechanism
11‧‧‧台盤 11‧‧‧Tray
12‧‧‧螺桿 12‧‧‧Screw
A‧‧‧刻劃裝置(分斷裝置) A‧‧‧Scribing device (breaking device)
M1‧‧‧馬達 M1‧‧‧Motor
M2‧‧‧馬達 M2‧‧‧Motor
W‧‧‧脆性材料基板 W‧‧‧Brittle material substrate
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CN111908780A (en) * | 2019-05-10 | 2020-11-10 | 塔工程有限公司 | Scribing device and control method thereof |
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JP3408805B2 (en) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | Cutting origin region forming method and workpiece cutting method |
JP2002100590A (en) * | 2000-09-22 | 2002-04-05 | Sony Corp | Splitting device and method therefor |
WO2003008352A1 (en) * | 2001-07-18 | 2003-01-30 | Mitsuboshi Diamond Industrial Co., Ltd. | Device and method for scribing fragile material substrate |
JP5060880B2 (en) * | 2007-09-11 | 2012-10-31 | 三星ダイヤモンド工業株式会社 | Fragment material substrate cutting apparatus and method |
JP2010023071A (en) * | 2008-07-18 | 2010-02-04 | Mitsuboshi Diamond Industrial Co Ltd | Method for machining terminal of laminated substrate |
KR20130031377A (en) | 2010-07-12 | 2013-03-28 | 필레이저 유에스에이 엘엘시 | Method of material processing by laser filamentation |
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JP5879106B2 (en) * | 2011-11-25 | 2016-03-08 | 三星ダイヤモンド工業株式会社 | Method for scribing a brittle material substrate |
JP6255147B2 (en) * | 2011-12-28 | 2017-12-27 | 三星ダイヤモンド工業株式会社 | Cutting device and method for cutting workpiece |
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JP2009034982A (en) * | 2007-07-31 | 2009-02-19 | National Applied Research Lab | Cutting device for cutting hard-brittle material |
JP2015037808A (en) * | 2013-08-02 | 2015-02-26 | ロフィン−ジナール テクノロジーズ インコーポレイテッド | Method and device for executing laser filamentation in transparent material |
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KR102472644B1 (en) | 2022-11-29 |
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