TW201328811A - Splitting device, splitting method of processed object, and splitting method of substrate having optical element pattern - Google Patents

Abstract

This invention provides a technique for splitting a brittle processed object with high precision and high efficiency. The splitting of for processed object includes the following steps: irradiating a first laser light on a scribed surface of the processed object so as to form a scribing line on the scribed surface and irradiating a second laser line along the scribed line from side of the scribed surface so as to heat the processed object along the scribed line; thus, by performing scribing and heating along the scribed line at the same location simultaneously, cracking that is generated by a tension stress field surrounding the irradiated and heated area of the second laser and is expanded from the scribed surface to a non-scribed surface is generated in sequence with the formation of the scribing so as to split the processed object.

Description

Breaking device, method for breaking workpiece, and method for breaking substrate with optical element pattern

The present invention is accustomed to an apparatus and method for separating a workpiece by irradiating laser light.

As a method of processing a hard and brittle material (brittle material) such as a cut glass plate or a sapphire substrate, various methods are known. For example, as a processing of a glass plate, a method of performing a so-called scribe line, that is, using a crystal of diamond or the like, to form a shallow scratch (initial crack) in a line shape from an end portion of a material to be cut, A force is applied to both sides of the initial crack formed, and the initial crack is expanded in the thickness direction to perform the breaking.

However, in this method, when the breaking operation is performed, depending on the depth of the scribe line and the manner in which the force is applied, the cross section may be inclined, or may be broken in an unexpected direction, etc., so that the desired result cannot be obtained. Breaking accuracy, in the worst case, there is also the risk of overall material damage.

In addition, it is also known that the initial crack is applied to the end portion of the workpiece, and the laser beam is scanned from the end portion by laser light to expand the crack to separate the workpiece (for example, reference) Patent Document 1).

In this method, if the brittle material as the breaking target is homogeneous and the generated stress field is an ideal stress field, the position or direction of the crack propagation may be controlled with high precision, but actually, It is difficult to control the spread of cracks with high precision in terms of material inhomogeneity, unevenness in heating energy distribution, difficulty in controlling the position of the heating point with high precision, and the like. this The high precision system mentioned is assumed to be position control at μm level accuracy.

Moreover, stress dispersion occurs at the end of or near the workpiece, and the stress distribution becomes uneven. For these reasons, in the crack propagation control, it is necessary to limit the processing order or deliberately shift the heating point. Etc. (for example, refer to Patent Document 2).

In addition, a brittle material in which a unit pattern is two-dimensionally arranged on a surface is cut into a single piece (in units of a wafer) in units of a unit pattern, and is to be orthogonal to each other in two directions orthogonal to each other by laser cutting. In the case of cutting, after cutting in a certain direction, cutting is performed in a direction orthogonal thereto, but in the case of a large amount of wafer processing, the application manner of the initial crack or the like becomes more complicated.

As a combination of the above methods, there is also known a method of using a diamond or a Vickers indenter to set a minute scratch on the end of a hard brittle material substrate (for example, glass, enamel, ceramic, and sapphire, etc.) (initial turtle) After the cracking, the laser light absorbing material is disposed on the back side of the substrate, and the back surface of the substrate is locally heated by laser irradiation of the focus, and the stress concentration generated thereby expands the crack, thereby breaking the glass ( For example, refer to Patent Document 3).

Alternatively, a method is known in which a linear processing mark called a scribe line or a scribe line is applied mechanically or by irradiation with laser light in advance on the surface of the workpiece, along the processing mark, by laser light Irradiation heating is performed to expand the crack from the processing mark, thereby separating the workpiece (for example, refer to Patent Document 4 and Patent Document 5).

Further, Patent Document 3 also discloses a configuration in which a laser beam is irradiated from a surface opposite to the scribe line to perform division.

Further, a method of improving the luminous efficiency by providing irregularities on the side surface of the light-emitting element by dry etching is also known (for example, refer to Patent Document 6).

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Special Fair No. 3-13040

[Patent Document 2] Japanese Patent Laid-Open No. Hei 9-45636

[Patent Document 3] Japanese Patent Laid-Open Publication No. 2008-62547

[Patent Document 4] Japanese Patent No. 2712723

[Patent Document 5] Japanese Patent No. 3036906

[Patent Document 6] Japanese Patent No. 3852000

In the method disclosed in Patent Document 3, the direct heating by the laser light is finally a laser light absorbing material, and the hard and brittle material substrate is indirectly heated only by heat conduction from the laser light absorbing material. Therefore, it is difficult to ensure the uniformity of heat conduction, and the tensile stress does not necessarily act in the desired direction. Further, similarly to the conventional laser cutting disclosed in Patent Document 1, it is difficult to control the expansion direction of the crack. Therefore, it is difficult to perform accurate division by this method.

Further, as disclosed in Patent Document 4 and Patent Document 5, at most, the basic principle of breaking the workpiece by irradiating laser light with a machining mark formed by mechanically or using laser light is used, and the point is efficiently generated. There is no disclosure or revelation of the method of breaking.

Further, Patent Document 6 discloses a technique for improving light extraction efficiency by performing uneven processing on a side surface of a semiconductor film of a light-emitting element, but does not disclose processing of a sapphire wafer as a base material. If the sapphire substrate is subjected to the concavo-convex processing by the method disclosed in Patent Document 6, it is necessary to perform the resist coating treatment again, and the etching itself takes time and the productivity is low.

The present invention has been made in view of the above problems, and an object thereof is to provide a technique capable of accurately and efficiently breaking a workpiece including a brittle material. Further, in particular, in the case where the workpiece is a substrate having a pattern of a light-emitting element pattern formed two-dimensionally on the surface, in addition to high-precision and efficient processing, it is also possible to improve the light-emitting element. The technology of luminous efficiency.

In order to solve the above problems, the invention of claim 1 is a breaking device that is a processor that breaks a workpiece, and is characterized in that it includes: a platform on which a fixed workpiece is placed; a scribing processor that borrows The first laser light emitted from the first emission source is scanned relative to the platform, and the surface of the workpiece, which is fixed on the platform, is irradiated with a scribe surface, thereby Forming a scribe line on the line surface; and illuminating the heater, the second laser light emitted from the second output source is irradiated along the scribe line while being scanned relative to the platform, thereby heating along the scribe line And the scriber and the illuminating heater are provided to simultaneously illuminate the first laser light and the second laser light at the same position on the scribe line; The first emission source and the second emission source simultaneously move the first workpiece light from the first emission source while moving relative to the workpiece placed on the platform. The second laser light of the exit source is emitted, and the scribing surface is formed on the scribing surface, and the tensile stress field formed around the irradiation heating region of the second laser light is formed together with the formation position of the scribing line Moving, whereby the expansion of the crack from the scribe line to the non-scribe surface caused by the scribe line in the tensile stress field is sequentially generated together with the formation of the scribe line, thereby dividing the above The processed object.

According to a second aspect of the invention, in the aspect of the invention, the first aspect of the invention, wherein the first source and the second source are common to each other, the first source to the scribe line is The optical path of the first laser light is coaxial with the optical path of the second laser light from the second emission source to the scribing surface.

The invention according to claim 1 or 2, wherein the illumination heater includes an adjustment mechanism that adjusts an irradiation range of the second laser light emitted from the second emission source; The second laser light after the adjustment range is adjusted by the adjustment mechanism is irradiated onto the scribing surface.

The breaking device according to claim 1 or 2, characterized in that the second laser light is a CO ₂ laser.

According to the breaking device of claim 4, the invention of claim 5 is characterized in that the second laser light is irradiated in the pulse oscillation mode to separate the cross-section of the single piece formed by the workpiece. Produce with veins The corresponding period of the oscillation period is used to reduce the fluctuation of the total reflectance.

According to the breaking device of the first aspect or the second aspect, the invention of claim 6 is characterized in that the first laser light system YAG (Yttrium Aluminum Garnet) has three times of high frequency harmonics.

According to the invention of claim 1 or 2, the invention of claim 7 is characterized in that: the platform is freely rotatable in a horizontal plane while maintaining the workpiece; the breaking device further includes an alignment processor, The alignment processor performs an alignment process by rotating the platform in a horizontal plane, the alignment process correcting a posture in which the workpiece mounted on the platform is placed in a horizontal plane; and The above-mentioned workpiece to be processed is aligned, and the scribing line is formed by the scribing machine, and heated by the irradiation heater.

The invention according to claim 1 or 2, wherein the scriber is configured to melt and re-solidify the irradiated position of the first laser light to deteriorate the irradiated position. The area, thereby forming the above-mentioned scribe line.

According to the invention of claim 1 or 2, the invention of claim 9 is characterized in that: the scribing processor causes ablation of the irradiated position of the first laser light to form an ablation at the irradiated position. The groove portion, thereby forming the above-mentioned scribe line.

The invention of claim 10 is a method for dividing a workpiece, characterized by comprising: a scribing processing step of ejecting the first laser light from the first emission source and scribing the workpiece Irradiating the first laser light to form a scribe line on the scribe line surface; and irradiating and heating the step And causing the second laser light to be emitted from the second emission source, and irradiating the second laser light along the scribe line from the side of the scribe line, thereby heating the workpiece along the scribe line; and The first emission source and the second emission source simultaneously move the workpiece to be placed on the stage, and simultaneously irradiate the first laser light in the scribing processing step at the same position Irradiating the second laser light in the irradiation heating step to form the scribe line on the scribe line, and forming a tensile stress field formed around the illuminating heating region of the second laser light and the scribe line The formation position is moved together, whereby the expansion of the crack from the scribe line to the non-scribe surface caused by the scribe line in the tensile stress field is sequentially generated together with the formation of the scribe line. Thereby, the above-mentioned workpiece is separated.

The method of dividing a workpiece according to claim 10, wherein the first aspect of the invention is characterized in that: the first source and the second source are common to the first source to the The optical path of the first laser light on the line surface is coaxial with the optical path of the second laser light from the second emission source to the scribing surface.

The method of dividing a workpiece according to claim 10 or 11, wherein the invention of claim 12 is characterized in that a plurality of the scribe lines are formed by irradiation of the first laser light at a specific pitch in a first direction, respectively. And performing the irradiation and heating of the second laser light along the scribe line, and forming a plurality of the scribe lines by irradiation of the first laser light at a specific pitch in a second direction orthogonal to the first direction, respectively. And irradiating and heating the second laser light along the scribe line.

According to a thirteenth aspect of the invention, in the irradiation heating step, the irradiation beam diameter of the second laser light is equal to or smaller than a pitch at which the scribe line is formed.

The method of dividing a workpiece according to claim 10 or 11, wherein the invention according to claim 14 is characterized in that, in the irradiation heating step, the second laser light emitted from the second emission source is adjusted by an adjustment mechanism After the irradiation range, the second laser light is irradiated onto the scribing surface.

The method of dividing a workpiece according to claim 10 or 11, wherein the second laser light is a CO ₂ laser.

The method of dividing a workpiece according to claim 15 is characterized in that, in the irradiation heating step, the second laser light is irradiated in a pulse oscillation mode, and the workpiece is separated. On the divided cross-section of the formed single sheet, an undulation having a period corresponding to the period of the pulse oscillation period for reducing the total reflectance is generated.

The method of dividing a workpiece according to claim 10 or 11, wherein the invention of claim 17 is characterized by three times of high frequency harmonics of the first laser light YAG laser.

The method of dividing a workpiece according to claim 10 or 11, wherein the breaking method further comprises an alignment processing step of correcting a posture of the workpiece in a horizontal plane, and The workpiece to be processed in the alignment processing step is subjected to the scribing processing step and the irradiation heating step.

Method for breaking a workpiece according to claim 10 or 11, technical solution 19 According to another aspect of the invention, in the scribing processing step, the scribed line is formed by causing melting and re-solidification at the position where the first laser light is irradiated to cause the irradiated position to become a modified region.

The method of dividing a workpiece according to claim 10 or 11, wherein the invention of claim 20 is characterized in that in the scribing processing step, ablation is generated at an irradiation position of the first laser light, and A groove portion is formed at the irradiation position, thereby forming the above-described scribe line.

The invention of claim 21 is a method of breaking a substrate having an optical element pattern, which is a method of forming a substrate having an optical element pattern in two-dimensionally formed on a surface thereof, and is characterized by comprising: a scribing processing step of forming a scribe line on the scribing surface by emitting the first laser light from the first emission source and irradiating the scribing surface of the workpiece with the first laser light; And an irradiation heating step of heating the second workpiece by emitting the second laser light from the second emission source, and irradiating the second laser light along the scribe line from the scribe line side, and heating the workpiece along the scribe line; And performing the first movement in the scribing processing step simultaneously with the same position by simultaneously moving the first emission source and the second emission source relative to the workpiece placed on the platform Irradiation of the laser light and irradiation of the second laser beam in the irradiation heating step, thereby forming the scribe line on the scribe line and heating the illuminating light formed on the second laser beam The tensile stress field around the domain moves along with the formation position of the scribe line, thereby expanding the crack from the scribe line to the non-scribe surface caused by the scribe line being located in the tensile stress field. Produced in the same order as the formation of the above-mentioned scribe lines, thereby breaking the above-mentioned And processing, wherein the second laser light is emitted in the pulse oscillation mode, thereby generating a cross section corresponding to the pulse oscillation period on the cross section of the optical element formed by dividing the workpiece The period is used to reduce the fluctuation of total reflectance.

According to the inventions of the first aspect to the twenty-first aspect, the scribe line is formed and the ray is formed by simultaneously irradiating the first laser light with the predetermined breaking position of the predetermined workpiece to be heated by the second laser light. The tensile stress acts on the scribe line, whereby the expansion of the crack from the scribe line to the non-scribe surface is sequentially generated together with the formation of the scribe line, whereby the workpiece can be accurately separated. Further, since the scribe line is formed by the irradiation of the first laser light and the irradiation is performed by the second laser beam, the high-precision breaking processing can be performed with high productivity.

In particular, according to the inventions of claim 5 and claim 16, the undulations may be intentionally generated on the sectional sections of the object to be separated. In this case, for example, the object to be separated is a substrate for LED manufacturing, which is a sapphire substrate on which an LED (Light Emitting Diode) pattern is two-dimensionally formed, and is divided into LED wafer units. In the case of a single chip, total reflection on the cross-section of the LED chip can be suppressed, thereby improving the luminous efficiency of the LED chip.

<First Embodiment> <Basic Principles of Processing>

First, the basic principle will be described before explaining the processing (breaking processing) of the present embodiment. Roughly speaking, the division performed in this embodiment The processing is performed by irradiating the first laser light (the laser light for scribing) to the predetermined breaking position of the workpiece (the object to be separated) W to form the scribe line SL, and then using the second laser light (for heating) The irradiation of the laser light is performed by heating (laser heating), whereby a stress field is generated in the vicinity of the scribe line SL, whereby the crack (crack) is expanded from the scribe line SL as the initial crack, and the workpiece is cut and processed. Things.

As the workpiece W, a brittle material such as a glass plate or a sapphire substrate or a substrate in which a unit pattern is two-dimensionally formed by a film layer or the like on a surface of a substrate including the brittle material (hereinafter referred to as a pattern) is suitable. Substrate).

Fig. 1 is a view schematically showing a state in the middle of the breaking process. More specifically, FIG. 1 shows a state in which laser heating is performed by irradiating the heating laser light LBh along the scribe line SL formed in advance on the workpiece W.

In the following description, the surface on which the scribe line SL is formed in the workpiece W or the surface on which the scribe line SL is to be formed is referred to as a scribe line W1, and the opposite surface of the scribe line W1 is referred to as Non-lined surface W2. In addition, FIG. 1 shows a state in which the scribing surface W1 is scanned by moving the heating laser light LBh in the scanning direction indicated by the arrow AR1 (which is of course also the extending direction of the scribe line SL), but it is also possible to replace In this case, the heating laser light LBh is fixedly irradiated at a certain irradiation position, and on the other hand, the workpiece W is moved by a mover (not shown) to realize the heating laser light LBh. A relative scan in the direction of arrow AR1.

As shown in Fig. 1, when the heating laser light LBh is irradiated, the irradiation region of the heating laser light LBh on the scribing surface W1 of the workpiece W is heated and expanded. The expansion becomes the compressive stress field SF1. On the other hand, the outer peripheral region of the compressive stress field SF1 contracts to become the tensile stress field SF2. When the scribe line SL is included in the tensile stress field SF2, the tensile stress TS acts on the side of the scribe line SL in the workpiece W. Under the action of the tensile stress TS, the crack CR is expanded from the scribe line SL toward the predetermined breaking position L0 on the non-scribe line surface W2 side. Further, as described above, since the heating laser light LBh is relatively scanned along the scribe line SL, the tensile stress field SF2 also moves along the scribe line SL. Then, the portion where the crack CR expands toward the non-scribe line surface W2 side is shifted in the extending direction of the scribe line SL, that is, the scanning direction of the heating laser light LBh. Therefore, if the heating laser light LBh is irradiated from one end to the other end of the scribe line SL provided at the predetermined breaking position on the side of the scribe line W1, the crack CR can be sequentially arranged at the entire forming position of the scribe line SL. The predetermined breaking position L0 is expanded, and as a result, the workpiece W can be separated. This is the basic principle of the breaking process of this embodiment.

When the workpiece W is cut in this manner, the scribing SL which is accurately positioned on the scribing surface W1 after accurately positioning the workpiece W is set as the initial crack, and the crack is caused. CR expands toward the non-line surface W2 side. In general, since the thickness of the workpiece W is extremely small compared to the length of the scribe line SL, and the tensile stress field SF2 formed by the heating laser light LBh is relatively uniform, the breaking position is less likely to shift. That is, in the present embodiment, it is possible to achieve the breaking with excellent precision. As a result, the division of the μm level accuracy can be achieved.

In addition, a substrate or the like which is a sapphire substrate on which a LED pattern is formed two-dimensionally on the surface, that is, a substrate for LED production, or the like is divided into a unit pattern. When a predetermined piece of the substrate is set to a lattice-shaped substrate, such as a single chip (in units of wafers), a plurality of scribe lines SL are sequentially formed in the first direction and the second direction orthogonal to each other. The heating laser light LBh is sequentially used for heating in each direction. In this case, if laser heating is performed by the heating laser light LBh along the scribe line SL (first scribe line) extending in the first direction, then another scribe line SL orthogonal to the other In the vicinity of the lattice point of the double scribe line, the crack CR on the second scribe line extending in the second direction also partially and slightly expands toward the non-scribe surface W2. However, in this case, by performing laser heating on the trailing edge of the second scribe line, it is also possible to perform the division without any problem in accuracy.

As the laser light for scribing, appropriate pulsed laser light can be selected and used depending on the material of the workpiece W or the like. For example, in the case where the workpiece W is a sapphire substrate or a substrate for pattern production, which is a substrate to be patterned, which is produced by using a sapphire substrate, it is preferably 3 times higher harmonics using a YAG laser (wavelength is 355 nm). In addition, in order to improve the accuracy and reliability of the breaking at the predetermined breaking position, it is desirable that the scribe line SL be formed as thin as possible. Therefore, the laser light for scribing is irradiated with an irradiation range of several μm to several tens of μm (illumination beam) Radiation). In addition, from the viewpoint of processing efficiency (energy utilization efficiency), the laser beam for scribing is focused on the scribing surface W1 of the workpiece W or the vicinity of the scribing surface W1 inside (from the scribing surface W1 to Irradiation is performed in a manner of approximately tens of μm or so. Further, in the present embodiment, the irradiation beam diameter means that when the energy distribution of the cross section of the irradiated laser beam is assumed to be a Gaussian distribution shape, the energy value is 1/e ² or more of the highest value of the center. The diameter of the area.

Further, the scribe line SL may be a form in which a groove portion having a triangular or wedge-shaped cross section formed by evaporating a substance at a position where the laser beam for scribing is irradiated is also a scribe line SL. The deformed region having a triangular or wedge-shaped cross section formed by melting and resolidifying (melting and modifying) the substance at the irradiated position may be a form of a scribe line SL. The irradiation conditions (pulse width, repetition frequency, peak power density, scanning speed, etc.) of the laser light for scribing are determined according to the form adopted. In addition, although the scribe line SL is continuously formed in FIG. 1 , the formation form of the scribe line SL is not limited to this. For example, the form of the scribe line SL may be formed in a dotted line or a dotted line along a predetermined breaking position.

On the other hand, as the heating laser light LBh, it is preferable to use a CO ₂ laser (wavelength of 9.4 μm to 10.6 μm) as a long-wavelength laser. Since the CO ₂ laser is surely absorbed on the surface of the glass or sapphire, the crack CR can be surely expanded from the scribe line SL. Further, the purpose of irradiating the laser light for scribing is to form the scribing SL, that is, to process the workpiece, and the purpose of irradiating the heating laser light LBh is to compress in the heating region by heating the workpiece. A tensile stress field SF2 is formed around the stress field SF1. Therefore, the irradiation range of the heating laser light LBh can be made larger than the irradiation range of the laser light for scribing, from the aspect that the workpiece is not damaged or deteriorated, or the tensile stress field SF2 is formed as wide as possible. . For example, when the thickness of the workpiece is 150 μm, it may be from 100 μm to 1000 μm.

However, when the rectangular-shaped wafer is cut out from the substrate of the self-attached pattern, the irradiation beam diameter of the heating laser light LBh is set to be after the breaking. The resulting wafer has the same planar dimensions (substantially equal to the predetermined breaking position) or less. When the irradiation beam diameter is set larger than the planar size of the wafer, a wafer which cannot be well cut and a specific shape cannot be obtained, which is not preferable.

<Relationship between oscillation mode of laser light for heating and sectional shape>

For example, when a CO ₂ laser is used as the heating laser light LBh, the heating laser light LBh can be irradiated in the two oscillation modes of the continuous oscillation mode and the pulse oscillation mode. Further, it was confirmed that the shape of the cross-section of the workpiece W was different depending on the oscillation mode. Specifically, in the continuous oscillation mode, the cross-section formed by the crack propagation becomes a very smooth flat surface. On the other hand, in the case of the pulse oscillation mode, periodic undulations (concavities and convexities) corresponding to the oscillation period of the pulse are formed on the cross-section. 2 is an SEM (Scanning Electron Microscope) image of a cross section when a sapphire substrate is separated by using a CO ₂ laser as the heating laser light LBh. In the figure, "Fracture surface" is a cross section, Groove is a scribe line, and "Feed direction" is the moving direction of the sapphire substrate (the opposite direction of the scanning direction of the laser light) . In the case shown in Fig. 2, although the cross-section is transparent, undulations are formed at intervals of several tens of μm. In general, since the cross-section of the workpiece W is preferably a flat surface, in many cases, the irradiation of the heating laser light LBh is performed in the continuous oscillation mode.

In contrast, there is also a case where it is preferable to intentionally (actively) generate undulations in the sectional section. For example, it is suitable that the workpiece W is a sapphire substrate in which an LED (light emitting element) pattern is two-dimensionally formed on the surface (crystal The circle is a substrate for LED manufacturing, and is divided into a single piece in units of LED wafers. Fig. 3 is a view showing a difference in the manner of traveling of light in the cross-section when the cross-section is flat and when there is undulation on the flat surface.

In general, as a light-emitting element (LED wafer), it is required that light emitted from a light-emitting element structure portion provided on a substrate is extracted as far as possible without being shielded. Since a part of the light is also incident on the substrate portion, in order to improve the actual luminous efficiency (light extraction efficiency) of the light-emitting element, it is necessary to transmit the emitted light as much as possible in the substrate portion. On the other hand, in the case where light enters a medium having a small refractive index from a medium having a large refractive index, there is an optical light which is totally reflected at a critical angle θ _c or more with respect to an interface (incident surface) thereof. Limitation (Snell's law). For example, θ _c = 34.4° when light enters the air from sapphire.

If the cross-section is a flat surface, as shown in FIG. 3( a ), all of the light incident on the light-emitting element portion at the incident angle of the critical angle θ _c or more is reflected. Further, in principle, total reflection is continued depending on the traveling direction after the generation, and as a result, light is generated in a state of being enclosed inside the LED wafer. If the light enters the air from the sapphire as described above, the light incident on the cross-section at an incident angle of 34.4 or more and 55.6 or less is suitable for this case.

On the other hand, when there is a undulation in the cross-section, as shown in Fig. 3(b), even if the light is incident from the same direction as the case of Fig. 3(a), the incident angle is incident according to the incident angle. The position becomes smaller than that of Fig. 3(a), so that a component that transmits the cross section is generated. In addition, even if it is reflected on a certain section, the probability of transmission on different sections is also high. That is, the incidence can be reduced to The proportion of the cross-section light that is totally reflected on the cross-section (total reflectivity). Therefore, when there is a undulation in the cross-section, it is possible to achieve a state in which the generated light is more easily extracted than in the case where the cross-section is a flat surface. Further, in the actual light-emitting element, the substrate of the LED wafer is not necessarily directly exposed to the outside but is sealed by a resin or the like. In this case as well, the above effects can be obtained.

In view of the above, when the workpiece W is a substrate for LED manufacturing and is divided in units of LED chips, the heating laser light LBh is irradiated in the pulse oscillation mode to cause undulations in the cross-section. Break down. Thereby, an LED wafer having high light extraction efficiency can be obtained. Since this method can form an undulation at the same time as the breaking of the workpiece W, it is efficient and more productive than the method of forming the unevenness by dry etching as disclosed in, for example, Patent Document 6.

<breaking device and actual processing form>

Next, a breaking device that breaks a workpiece based on the above-described processing principle and an actual machining form that is performed in the breaking device will be described. FIG. 4 is a view schematically showing the configuration of the breaking device 100. FIG. 5 is a view showing the configuration of the processing optical system 100A included in the breaking device 100.

As shown in FIG. 4, the breaking device 100 mainly includes a platform portion 10, a processing optical system 100A, and a position reading optical system 40. As shown in FIG. 5, the processing optical system 100A includes a laser optical system 20 for scribing and a laser optical system 30 for heating, and has a configuration in which both optical systems share an objective lens 101 and a dichroic mirror 102. In addition, the breaking device 100 includes control In the system 50, the control system 50 includes, for example, a CPU (Central Processing Unit), a ROM (Read-Only Memory), and a RAM (Random Access Memory). The operation of each component is controlled by exchanging various signals between the laser optical system 20 for scribing, the laser optical system 30 for heating, and the position reading optical system 40, and the like. Further, the control system 50 may be incorporated in the main body of the breaking device 100 integrally with other components, or may be provided separately from the main body of the breaking device 100 including, for example, a personal computer.

The platform unit 10 mainly includes an XY stage 11 and a processing platform 12 provided on the XY stage 11.

The XY stage 11 is freely movable in two directions (X direction, Y direction) orthogonal to each other in the horizontal plane (in the XY plane) in accordance with the drive control signal sg1 from the control system 50. Further, the position information signal sg2 of the XY stage 11 is continuously fed back to the control system. Further, in the present embodiment, for the sake of convenience, the XY stage 11 is processed while moving in the X direction.

The processing platform 12 is a portion for mounting the workpiece W on the workpiece. The processing platform 12 includes an adsorption mechanism (not shown), and the workpiece W is adsorbed and fixed to the upper surface 12a of the processing platform 12 by operating the adsorption mechanism based on the adsorption control signal sg3 from the control system 50. Way composition. Further, the processing platform 12 includes a rotation driving mechanism (not shown), and can also perform a rotation operation in a horizontal plane based on the rotation control signal sg4 from the control system 50.

In addition, although the illustration is omitted in FIG. 4, it is fixed to the processing platform. In the case of the upper surface of the workpiece W, an adhesive film may be attached to the non-scribe surface W2 side (the mounting surface side) of the workpiece W, and the workpiece W may be fixed together with the film.

The scribing laser optical system 20 irradiates the workpiece with the portion of the scribing laser light LBs based on the scribing laser control signal sg5 given from the control system 50.

As shown in FIG. 5, the laser optical system 20 for scribing mainly includes a laser oscillator 21, which is a light source (output source) for scribing laser light LBs, and a scribing line for outputting from the laser oscillator 21. The laser light LBs is an attenuator 22 for adjusting the amount of light. Further, as described above, since the pulsed laser light corresponding to the material of the workpiece W or the like is used as the laser light LBs for scribing, the laser oscillator 21 is selected in accordance with the type of the laser light LBs used for scribing. can.

Further, the laser optical system 20 for scribing also includes a mirror 23 that appropriately switches the direction of the optical path of the laser beam LBs for scribing by the laser beam LBs for reflecting and scribing. Further, although FIG. 5 exemplifies a case where only one mirror 23 is included, the number of the mirrors 23 is not limited thereto, and may be based on the inside of the laser optical system 20 for scribing or the inside of the device 100. The layout of the laser beam LBs for the scribing is appropriately set in order to set the layout of the laser beam LBs.

More specifically, the laser oscillator 21 is provided with a shutter 21a for switching the exit/non-exit of the laser light LBs for scribing. The switching operation of the shutter 21a is controlled based on an ON/OFF control signal sg5a which is one of the scribing laser control signals sg5. In addition, the adjustment of the amount of light of the laser light LBs for the scribing in the attenuator 22 is based on one of the laser control signals sg5 for scribing. That is, the output power control signal sg5b is controlled. The objective lens 101 is focused on the scribe line surface W1 of the workpiece W or the vicinity of the scribe line surface W1 in the interior (from the scribe line surface W1 to a range of approximately several tens of μm), and the irradiation beam diameter becomes The laser light LBs for the scribing through the surface reducer 22 is adjusted in a manner of several μm to ten μm.

The heating laser optical system 30 is a portion that irradiates the workpiece W with the laser light for heating based on the heating laser control signal sg6 supplied from the control system 50.

As shown in FIG. 5, the heating laser optical system 30 mainly includes a laser oscillator 31 as a light source (output source) for heating laser light LBh, and a laser light LBh for heating from the laser oscillator 31. The attenuator 32 for adjusting the amount of light and the beam adjusting mechanism 33 for adjusting the irradiation range of the heating laser light LBh with respect to the workpiece W are provided. As described above, since the CO ₂ laser is used as the heating laser light LBh, the laser oscillator 31 is a CO ₂ laser oscillator.

Further, although not shown in FIG. 5, similarly to the laser optical system 20 for scribing, the heating laser optical system 30 may include appropriate switching of heating by the reflection heating laser light LBh. The mirror of the direction of the light path of the laser light LBh.

More specifically, the laser oscillator 31 is provided with a shutter 31a for switching the emission/non-exposure of the heating laser light LBh. The switching operation of the shutter 31a is controlled based on the ON/OFF control signal sg6a which is one of the heating laser control signals sg6. Further, the adjustment of the amount of light of the heating laser light LBh in the attenuator 32 is based on one of the heating laser control signals sg6. The output power control signal sg6b is controlled.

Further, the beam adjustment mechanism 33 is provided to adjust the irradiation range of the heating laser light LBh linearly emitted from the laser oscillator 31. The beam adjustment mechanism 33 is realized by, for example, appropriately combining various lenses, and by adjusting the positions of the lenses, the heating laser light LBh passing through the objective lens 101 can illuminate the workpiece W with an appropriate irradiation range. . In addition, in FIG. 5, the adjustment by the beam adjustment mechanism 33 is performed, and the heating laser light LBh is irradiated to the workpiece W by an irradiation range larger than the beam diameter when the laser oscillator 31 is emitted. .

The dichroic mirror 102 is provided such that the laser beam LBs emitted from the laser oscillator 21 included in the laser optical system 20 from the scribing optical line 20 and whose light amount has been adjusted by the attenuator 22 is transmitted, and The laser oscillator 31 included in the self-heating laser optical system 30 emits light, and the amount of light is adjusted by the attenuator 22, and the irradiation range is reflected by the heating laser light LBh adjusted by the beam adjusting mechanism 33.

The objective lens 101 is responsible for simultaneously adjusting the focus position of the laser beam LBs for scribing through the dichroic mirror 102 and the laser light LBh for heating. In other words, the objective lens 101 also makes the emission source of the laser light LBs for the scribing of the workpiece W common to the emission source of the laser light LBh for heating. Further, as described above, the laser light for scribe line LBs uses a relatively short-wavelength laser light such as a three-time high-frequency harmonic of the YAG laser (wavelength: 355 nm), and the laser light for illumination LBh is used. It is a CO ₂ laser with long wavelength laser. As the objective lens 101, it is necessary to use an objective lens capable of simultaneously adjusting the focus of laser light having different wavelengths. From this point of view, it is preferable to use a reflection type objective lens as the objective lens 101.

Further, in the processing optical system 100A, the arrangement of the respective portions is adjusted so that the laser light LBs transmitted through the dichroic mirror 102 is coaxial with the optical path of the heating laser light LBh reflected by the dichroic mirror 102. Thereby, the scribing laser light LBs and the heating laser light LBh can be simultaneously irradiated to the same position of the workpiece W.

The position reading optical system 40 captures a workpiece W that is adsorbed and fixed on the processing platform 12 by a CCD (Charge Coupled Device) camera (not shown), and captures the obtained image data. The control system 50 is given as the image information signal sg7. The control system 50 sets the movement range of the XY stage 11 and the irradiation position of the laser light LBs for scribing or the laser light LBh for heating based on the obtained image information signal sg7.

In the breaking device 100 having the above configuration, by moving the XY stage 11 in a state where the workpiece W is adsorbed and fixed to the processing stage 12, the workpiece W can be processed from below with respect to the workpiece W. The optical system 100A and the position reading optical system 40 are arranged in opposite directions. Further, in this case, the workpiece W is fixed to the processing platform 12 such that the scribing surface W1 becomes the upper surface (non-mounting surface).

By moving the XY stage 11 in a state where the workpiece W is placed opposite to the processing optical system 100A, the workpiece W placed on the processing stage 12 is simultaneously opposed to the objective lens 101. Moving, the scribing SL can be formed by the irradiation of the laser beam LBs at the same position of the workpiece W at the same position, and the laser light LBh is used for the same position. The line SL is irradiated and heated. Thereby, the two steps performed as a separate step in the description of the above processing principle can be completed by one movement of the XY stage 11, that is, a scribe line SL is formed at a predetermined breaking position of the workpiece W; And using the extension of the crack CR from the scribe line SL to break at the predetermined breaking position. Hereinafter, the breaking (processing) in this form is referred to as simultaneous breaking processing.

Fig. 6 is a view schematically showing one form of simultaneous breaking processing. In the case shown in FIG. 6, when the XY stage 11 is moved in the X direction indicated by the arrow AR2, the scribe line laser light LBs is along the predetermined breaking position L1 of the scribing surface W1 side of the workpiece W ( The scribe line SL is formed by irradiation along the scanning direction indicated by the arrow AR1, and the heating laser light LBh is irradiated to the irradiated position of the scribing laser light LBs and its vicinity. Thereby, the scribe line SL can be formed, and the crack W can be expanded from the scribe line SL toward the predetermined breaking position L0 of the non-scribe surface W2 of the workpiece W, thereby separating the workpiece W. That is, the breaking at a predetermined breaking position can be accomplished by one movement of the XY stage 11.

Further, in the case of simultaneous cutting processing, when a plurality of predetermined breaking positions are set in the same direction, or a predetermined breaking position is set to a lattice shape, when simultaneous cutting processing is applied, the processing sequence is as described above. The processing sequence in the principle method in which the entire scribe line SL is formed and the irradiation is performed along all the scribe lines SL to perform the division is different. That is, if a plurality of predetermined breaking positions are set in the same direction, the following processing may be repeatedly performed: after the breaking at the first predetermined breaking position is finished, the XY stage 11 is moved in the Y direction. Equivalent to the distance between the predetermined breaking positions, right The second predetermined breaking position performs the same simultaneous breaking process. Further, when the two orthogonal directions are divided, the simultaneous division in the first direction may be sequentially performed, and then the second direction orthogonal to the first direction may be simultaneously divided. Broken processing.

The morphological phase is performed in a separate step with the laser light LBs for forming the scribe line SL and the heating laser light LBh for dividing along the scribe line SL, respectively, accompanying the movement of the XY stage 11. In terms of productivity, this simultaneous breaking process is a more excellent method. Further, since the one-shot mirror 101 irradiates the scribing laser light LBs and the heating laser light LBh, the relationship between the position where the scribe line SL is formed and the position at which the scribe line SL is heated by irradiation is fixed. Therefore, it is possible to perform the division with more stable precision than when the respective objective lenses are irradiated with the respective laser beams.

Further, in the case where the processing is simultaneously cut, the breaking of the workpiece W can be smoothly performed in a state in which the heating laser light LBh is irradiated in the pulse oscillation mode to cause undulations in the cross-section.

Further, in the breaking device 100, the workpiece W can be imaged by the position reading optical system 40 in a state in which the workpiece W and the position reading optical system 40 are opposed to each other, and based on the obtained captured image data. The alignment operation for correcting the inclination (posture) in the horizontal plane of the workpiece W is performed. Specifically, the control system 50 determines the tilt in the horizontal plane of the workpiece W based on the image content of the captured image data (for example, the arrangement position of the alignment mark or the arrangement position of the repeating pattern, etc.) (according to the XY stage) In order to eliminate the inclination, a rotation control signal sg4 is given to the machining platform 12 to rotate the machining platform 12 in order to eliminate the inclination. determine When tilting in the horizontal plane of the workpiece W, a well-known method such as a pattern matching method can be mainly applied.

As described above, according to the present embodiment, the predetermined breaking position of the predetermined workpiece is simultaneously irradiated with the laser light for scribing and the heating by the irradiation of the laser light for heating. Thereby, a scribe line is formed and a tensile stress is applied to the scribe line, whereby the crack can be sequentially expanded from the scribe line to the non-scribe line in the extending direction of the scribe line, thereby separating the workpiece.

Further, according to the present embodiment, the formation of the scribe line based on the higher positioning accuracy and the division formed by the expansion of the ridge from the scribe line can be realized by one movement of the XY stage. Therefore, it is possible to perform high-precision breaking processing with high productivity.

<Second embodiment>

In the cutting device 100 of the above-described embodiment, the optical system 100A for scribing and the optical laser system 30 for heating share the configuration of the objective lens 101 and the dichroic mirror 102, thereby realizing The scribing laser light LBs and the heating laser light LBh are simultaneously irradiated at the same position, but the configuration of the breaking device that realizes the irradiation form is not limited thereto.

FIG. 7 is a view schematically showing the configuration of the processing optical system 100A included in the breaking device 100 of the second embodiment. In the breaking device 100 of the second embodiment, the same components as those of the breaking device 100 of the first embodiment are denoted by the same reference numerals, and their description is omitted. In addition, in FIG. 7, although the objective lens 24 for scribing and the laser optical system 20 for scribing are shown individually, in this embodiment, except FIG. The laser oscillator 21 and the attenuator 22 are also included in the scribing objective lens 24, and are collectively referred to as the scribing laser optical system 20. In addition, in FIG. 7, although the heating objective lens 34, the mirror 35, and the heating laser optical system 30 are shown individually, in the following description, except the laser oscillator shown in FIG. 31. The attenuator 32 and the beam adjustment mechanism 33 are collectively referred to as a heating laser optical system 30, in addition to the heating objective lens 34 and the mirror 35.

Further, the mirror 35 is provided to appropriately switch the optical path direction of the heating laser light LBh in the heating laser optical system 30 by the reflection heating laser light LBh. Although the case where only one mirror 35 is included is illustrated in FIG. 7, the number of the mirrors 35 is not limited to this, and may be based on the inside of the heating laser optical system 30 or the layout of the inside of the breaking device 100. In the case of the request or the other reason, the mirror 35 is provided to appropriately set the optical path of the heating laser light LBh. In addition, although not shown in FIG. 7, it is also possible to provide a mirror for the same purpose in the laser optical system 20 for scribing.

The processing optical system 100A of the present embodiment differs from the processing optical system 100A of the first embodiment in that instead of having the shared objective lens 101, the scribing laser optical system 20 includes an objective lens for scribing. 24, the heating laser optical system 30 includes the heating objective lens 34; and the dichroic mirror 102 is not included. On the other hand, in the processing optical system 100A, the processing optical system 100A is configured such that the laser light for scribe line LBs and the laser light for illumination LBh are simultaneously irradiated at the same position of the workpiece W. Part of the configuration.

With this configuration, in the present embodiment, the workpiece W placed on the processing stage 12 can be moved relative to the objective lens 101 by the movement of the XY stage 11 as in the first embodiment. Simultaneously moving, the scribing laser light LBs and the heating laser light LBh are simultaneously irradiated to form the scribe line SL, and the crack CR is directed from the scribe line SL toward the predetermined breaking position of the non-scribe surface W2 of the workpiece W. The L0 is expanded to perform simultaneous breaking processing. Therefore, in the case of the present embodiment, as in the case of the first embodiment, it is possible to increase the irradiation light LBs for the scribing and the laser light LBh for heating in a separate step. The production is carried out to break the workpiece.

In addition, since the arrangement relationship between the objective lens 24 for scribing and the objective lens 34 for heating is fixed, the position at which the scribe line SL is formed is inevitably the irradiation heating position as in the first embodiment. Therefore, in the present embodiment, it is also possible to perform the division with stable accuracy.

<Modification>

When the simultaneous cutting process is performed, the cooling gas may be sprayed to a portion of the tensile stress field SF2 formed by the heating laser light LBh in the scanning direction to cool the portion. In this case, the temperature difference between the cooled portion of the tensile stress field SF2 and the compressive stress field SF1 heated by the irradiation of the heating laser light LBh becomes higher, thereby further enhancing the stretching in the tensile stress field SF2. stress. Thereby, the reliability of the expansion of the crack CR can be improved. As a result, the workpiece W can be separated more accurately. Further, as the cooling gas CG, a gas that does not react with the workpiece W such as an inert gas can be suitably used.

10‧‧‧ Platform Department

11‧‧‧XY platform

12‧‧‧Processing platform

20‧‧‧ Laser optical system for marking

21‧‧‧Laser oscillator

21a‧‧ ‧Shutter

22‧‧‧Attenuator

23‧‧‧ Objective lens

23‧‧‧Mirror

24‧‧‧ Objective lens for marking

30‧‧‧Lighting laser system for heating

31‧‧‧Laser oscillator

31a‧‧ ‧Shutter

32‧‧‧Attenuator

33‧‧‧beam adjustment mechanism

34‧‧‧heating objective

35‧‧‧Mirror

40‧‧‧Optical system

50‧‧‧Control system

100‧‧‧ Breaking device

100A‧‧‧Processing optical system

101‧‧‧ objective lens

102‧‧‧ dichroic mirror

CR‧‧‧ crack

L0‧‧‧Predetermined breaking position

LBh‧‧‧Lighting for heating

LBs‧‧‧Leading laser light

SF1‧‧‧Compressive stress field

SF2‧‧‧ tensile stress field

Sg1‧‧‧ drive control signal

Sg2‧‧‧Location information signal

Sg3‧‧‧Adsorption control signal

Sg4‧‧‧rotation control signal

Sg5‧‧‧ Laser control signal for scribing

Sg5a‧‧‧ON/OFF control signal

Sg5b‧‧‧ output power control signal

Sg6‧‧‧heating laser control signal

Sg6a‧‧‧ON/OFF control signal

Sg6b‧‧‧ output power control signal

Sg7‧‧‧ image information signal

SL‧‧‧

TS‧‧‧ tensile stress

W‧‧‧Processed objects

W1‧‧‧ (worked object) line

W2‧‧‧ (processed material) non-dash surface

Fig. 1 is a view schematically showing a state in the middle of the breaking process.

2 is an SEM image of a cross section of a sapphire substrate when a CO ₂ laser is used as the heating laser light LBh.

3(a) and 3(b) are diagrams showing the difference in the traveling mode of light in the cross-section when the split section is flat and when there is undulation on the flat surface.

FIG. 4 is a view schematically showing the configuration of the breaking device 100.

Fig. 5 is a view showing a detailed configuration of the processing optical system 100A.

Fig. 6 is a view schematically showing a state of simultaneous cutting processing.

Fig. 7 is a view showing a detailed configuration of the processing optical system 100A of the second embodiment.

20‧‧‧ Laser optical system for marking

21‧‧‧Laser oscillator

21a‧‧ ‧Shutter

22‧‧‧Attenuator

23‧‧‧Mirror

30‧‧‧Lighting laser system for heating

31‧‧‧Laser oscillator

31a‧‧ ‧Shutter

32‧‧‧Attenuator

33‧‧‧beam adjustment mechanism

100A‧‧‧Processing optical system

101‧‧‧ objective lens

102‧‧‧ dichroic mirror

LBh‧‧‧Lighting for heating

LBs‧‧‧Leading laser light

Sg5a‧‧‧ON/OFF control signal

Sg5b‧‧‧ output power control signal

Sg6a‧‧‧ON/OFF control signal

Sg6b‧‧‧ output power control signal

W‧‧‧Processed objects

Claims (21)

A breaking device for processing a workpiece to be processed, comprising: a platform for mounting a fixed workpiece; and a scribing processor for causing the first source to be emitted a laser beam is oppositely scanned toward the platform, and a scribe line is irradiated on a surface of the workpiece to be mounted on the platform, thereby forming a scribe line on the scribe line; and illuminating heating The second laser light emitted from the second emission source is irradiated along the scribe line while facing the platform, thereby heating the workpiece along the scribe line; and the scribe line processing And the illumination heater is disposed to simultaneously illuminate the first laser light and the second laser light at the same position on the scribing surface, and the first emission source and the second emission source are disposed on one side Simultaneously moving the above-mentioned workpieces placed on the platform while simultaneously emitting the first laser light from the first source and the second mine from the second source The light is emitted, and the scribing surface is formed on the scribing surface, and a tensile stress field formed around the irradiation heating region of the second laser light is moved together with the formation position of the scribing line, thereby causing The extension of the scribe line generated by the tensile stress field from the scribe line to the non-scribe line surface is sequentially generated together with the formation of the scribe line, thereby separating the workpiece. The breaking device of claim 1, wherein the optical path of the first laser light from the first emission source to the scribing surface is made by co-synthesizing the first emission source and the second emission source The optical path of the second laser light from the second emission source to the scribing surface is coaxial. The breaking device of claim 1 or 2, wherein the illumination heater includes an adjustment mechanism that adjusts an irradiation range of the second laser light emitted from the second emission source; and adjusts an irradiation range by the adjustment mechanism The second laser light after the irradiation is irradiated on the scribing surface. The breaking device of claim 1 or 2, wherein said second laser light is a CO ₂ laser. The breaking device of claim 4, wherein the second laser light is irradiated in the pulse oscillation mode, and the cross section of the single piece formed by dividing the workpiece is generated to have a pulse oscillation period The period is used to reduce the fluctuation of total reflectance. A breaking device according to claim 1 or 2, wherein said first laser light system is a triple harmonic of said YAG laser. The breaking device of claim 1 or 2, wherein the platform is free to rotate in a horizontal plane while maintaining the workpiece, the breaking device further comprising an alignment processor, wherein the alignment processor Aligning in a horizontal plane, the alignment processing corrects the above-mentioned workpieces placed on the platform to be horizontal In the in-plane posture, the scribing machine is formed by the scribing machine and the heating is performed by the irradiation heater. The breaking device of claim 1 or 2, wherein the scribing processor causes melting and re-solidification of the irradiated position of the first laser light to cause the irradiated position to become a metamorphic region, thereby forming the scribing line . The breaking device according to claim 1 or 2, wherein the scribing processor causes the first laser light to be ablated at the irradiated position, and the groove portion is formed at the irradiated position, thereby forming the scribe line. A method for breaking a workpiece, which is a method for separating a workpiece, comprising: a scribing processing step of causing the first laser light to be emitted from the first source and processing the same The scribing surface of the object illuminates the first laser light, and the scribing surface is formed with a scribe line; and the illuminating heating step is performed by causing the second laser light to be emitted from the second ejecting source and from the scribing surface Illuminating the second laser light along the scribe line, heating the workpiece along the scribe line, and placing the workpiece on the platform by the first source and the second source Simultaneously performing relative movement, simultaneously performing the irradiation of the first laser light in the scribing processing step and the second laser light in the irradiation heating step simultaneously and at the same position Irradiating, the scribing surface is formed on the scribing surface, and a tensile stress field formed around the irradiation heating region of the second laser beam is moved together with the formation position of the scribing line, thereby The expansion of the line from the scribe line to the non-scribe surface due to the tensile stress field is sequentially generated in the same manner as the formation of the scribe line, thereby separating the workpiece. The method for dividing a workpiece according to claim 10, wherein the first laser light from the first emission source to the scribing surface is made common to the first emission source and the second emission source The optical path is coaxial with the optical path of the second laser light from the second emission source to the scribing surface. The method for breaking a workpiece according to claim 10 or 11, wherein a plurality of the scribe lines are formed by irradiation of the first laser light at a specific pitch in a first direction, and the scribe line is performed along the scribe line After the irradiation of the two laser beams is heated, a plurality of the scribe lines are formed by irradiation of the first laser light at a specific pitch in a second direction orthogonal to the first direction, and the scribe line is formed along the scribe line The illumination of the two lasers is heated. The method of dividing a workpiece according to claim 12, wherein in the irradiation heating step, the irradiation beam diameter of the second laser light is equal to or smaller than a pitch at which the scribe line is formed. The method of breaking the workpiece according to claim 10 or 11, wherein in the illuminating heating step, after adjusting the irradiation range of the second laser light emitted from the second source by the adjusting mechanism, The second laser light is irradiated onto the scribing surface. A method of breaking a workpiece according to claim 10 or 11, wherein said second laser light is a CO ₂ laser. The method for breaking a workpiece according to claim 15, wherein in the illuminating step, the second laser light is irradiated in a pulse oscillation mode, and the cross section of the single piece formed by dividing the workpiece is divided. On the other hand, an fluctuation for reducing the total reflectance with a period corresponding to the period of the pulse oscillation is generated. A method of breaking a workpiece according to claim 10 or 11, wherein the first laser light system is a triple harmonic of the YAG laser. The method for breaking a workpiece according to claim 10 or 11, wherein the breaking method further comprises an alignment processing step of correcting a posture of the workpiece in a horizontal plane, and the above-mentioned being subjected to the alignment processing step The processed object is subjected to the above-described scribing processing step and the above-described irradiation heating step. The method for dividing a workpiece according to claim 10 or 11, wherein in the scribing processing step, the irradiated position is caused by melting and re-solidification at the irradiated position of the first laser light The metamorphic region, thereby forming the above-described scribe line. The method for breaking a workpiece according to claim 10 or 11, wherein in the scribing processing step, ablation is generated at an irradiation position of the first laser light, and a groove portion is formed at the irradiated position. This forms the above-mentioned scribe line. A method for breaking a substrate having an optical component pattern, which is to be A method for two-dimensionally forming a substrate having an optical element pattern and having an optical element pattern, wherein the method includes: a scribing processing step of causing the first laser light to be emitted from the first emission source, and The scribing surface of the workpiece is irradiated with the first laser light, and a scribing line is formed on the scribing surface; and an irradiation heating step is performed by causing the second laser light to be emitted from the second emission source, and Irradiating the second laser light along the scribe line along the scribe line, and heating the workpiece along the scribe line; and placing the first source and the second source on the platform by the side of the first source and the second source Simultaneously moving the workpiece simultaneously, and simultaneously irradiating the first laser light in the scribing processing step and the second laser light in the irradiation heating step at the same position, thereby performing the scribing The scribe line is formed on the surface, and a tensile stress field formed around the irradiation heating region of the second laser light is moved together with the formation position of the scribe line, thereby causing the scribe line to be The expansion of the crack from the scribe line to the non-scribe surface caused by the tensile stress field is sequentially generated together with the formation of the scribe line, thereby separating the workpiece; and by pulsing in a pulse The second laser light is emitted in a mode, whereby a cross section of the optical element monolith formed by dividing the workpiece is generated, and an undulation for reducing the total reflectance is generated with a period corresponding to a pulse oscillation period. .