TWI498181B - Processing method of processed object and splitting method - Google Patents

Description

Processing method and segmentation method of processed object

The present invention relates to a processing method for processing a workpiece by irradiating laser light.

A technique for processing a workpiece (hereinafter, also referred to simply as a laser processing or a laser processing technique) as irradiation pulsed laser light (hereinafter, also simply referred to as laser light) is known as a method (for example, a reference patent) Document 1): Laser light having an ultrashort pulse having a pulse width of psec is irradiated on the upper surface of the workpiece while scanning, thereby sequentially causing the workpiece to be opened between the irradiated regions of the respective unit pulsed lights or The splitting is formed as a starting point (dividing starting point) for dividing as a continuous surface of a cleavage plane or a cleavage plane formed in each of the irradiated regions.

In Patent Document 1, a workpiece having a light-emitting element structure such as an LED (Light Emitting Diode) structure is formed on a substrate including a material such as a hard brittle and optically transparent material such as sapphire, and is divided into wafers. The above method is particularly effective when the unit is in the case of a unit. This is because the total reflectance at the position is lowered by the formation of fine concavities and convexities on the cleavage/cleavage surface, whereby the light extraction efficiency of the light-emitting element can be improved.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2011-131256

In the case where the starting point of the division is set for the workpiece, generally, the deeper the division starting point is formed, the easier the division is thereafter. However, in the case of the method disclosed in Patent Document 1, since the portion where the split/split is generated is only the vicinity of the surface of the workpiece, if the thickness of the workpiece becomes large, it is difficult to open the position to a deeper position. / Splitting to form a good starting point for segmentation. Even if the irradiation power of the laser light or the irradiation energy per unit length of the scribe line is simply increased, it will cause unnecessary damage to the workpiece, which is not preferable.

The present invention has been made in view of the above problems, and an object thereof is to provide a processing method capable of causing splitting/cracking to a deep position inside a workpiece when the workpiece is divided.

In order to solve the above problems, the invention of claim 1 is characterized in that it is a processing method for forming a starting point of division on a workpiece, and the focus position of each of the plurality of laser beams is the inside of the workpiece. The different depth positions are simultaneously performed by the irradiation step and the scanning step, and the workpieces are opened or split in the direction of the planned line at different depth positions of the workpiece, thereby being processed as described above. a starting point for dividing is formed on the object; and the irradiating step is configured such that the irradiated position on the irradiated surface of each unit pulsed light is spatially and temporally the same, and is disposed opposite to the workpiece One irradiation lens superimposes the ultrashort pulse light having a pulse width of psec, that is, the plurality of pulsed laser light; and the scanning step scans the predetermined line along the processing target under the condition that the irradiation position is discrete on the irradiation surface Complex beam pulse laser.

The invention of claim 2 is the method for processing a workpiece according to claim 1, characterized in that the laser beam is branched from a single light source and optically branched into a plurality of branch optical paths. The plurality of branched beam lights are set as the plurality of beam laser light, and each of the plurality of branch light paths is provided with a lens group having a different focal length in combination with the one illumination lens. Each of the plurality of bundles of pulsed laser light irradiated by the irradiation position has a different focus position.

The invention of claim 2 is the method for processing a workpiece according to claim 2, wherein the one beam of the laser light emitted from the one light source is optically branched into the first and second branched optical paths. And the plurality of bundles of laser light are used as the first and second pulsed laser beams; and the lens group provided in the first branching optical path is used as only the one of the illumination lenses to illuminate the first one The first pulsed laser light is irradiated so that the position of the focal length of the illumination lens is at the focus position, and the first branch optical path includes the one illumination lens and at least one focus position adjustment The lens group of the lens, wherein the composite focal length of the lens group is different from the focal length of the illumination lens, thereby causing the focus position of the second pulsed laser light and the first pulsed laser light The focus position is different.

The method of processing a workpiece according to any one of claims 1 to 3, wherein in the scanning step, the direction of the planned line is set to be relative to the workpiece. Different The two easy to split or split directions are equivalent directions.

The method of processing a workpiece according to any one of claims 1 to 3, characterized in that in the scanning step, the direction of the processing line and the workpiece are easily opened. Or the split direction is the same.

The method of processing a workpiece according to any one of claims 1 to 3, wherein in the scanning step, the direction of the processing line is different from the workpiece. The two above-mentioned easy splitting or splitting directions alternately change.

The invention of claim 7 is characterized in that it is a method of dividing a workpiece, and the workpiece to be processed by the method of any one of claims 1 to 3 is formed along the division starting point.

According to the inventions of the first aspect to the seventh aspect, the occurrence of deterioration or scattering of the workpiece is limited to a part, and on the other hand, the workpiece is cleaved or split not only in the direction of the planned line but also in the depth. The direction is actively generated, whereby the starting point of the division of the workpiece can be formed at a very high speed compared to the prior art.

<Basic Principles of Processing>

The basic principle of the processing realized in the embodiment of the present invention is the same as the processing principle disclosed in Patent Document 1. Therefore, only the outline will be described below. The processing performed in the present invention is generally a process in which pulsed laser light (hereinafter, also referred to simply as laser light) is irradiated on one side while being irradiated The upper surface of the workpiece (the surface to be processed), thereby sequentially causing the workpiece to be cleaved or split between the irradiated regions of the respective pulses as the cleavage plane or the cleavage plane formed in each of the irradiated regions. The starting point for the division (the starting point of the division) is formed by the continuous surface.

Further, in the present embodiment, the cleavage means a phenomenon in which the workpiece is substantially regularly broken along the crystal plane other than the cleavage plane, and the crystal plane is referred to as a cleavage plane. Further, in addition to being split or split as a microscopic phenomenon completely along the crystal plane, there is also a case where cracks which are macroscopic fractures are generated along a substantially fixed crystal orientation. Depending on the substance, there is also a case where only one of splitting, cracking, or cracking is mainly generated. However, in order to avoid the cumbersomeness of the description, the splitting, cracking, and cracking are not collectively referred to as splitting/cracking. Further, the processing as described above is sometimes referred to simply as splitting/cracking processing.

Hereinafter, a case will be described in which the workpiece is a hexagonal single crystal substance, and each of the a1 axis, the a2 axis, and the a3 axis which are at a mutually symmetrical position in the C plane thereof at an angle of 120°. The axial direction is an easy-opening/cleaving direction, and the planned line is perpendicular to any of the a1 axis direction, the a2 axis direction, and the a3 axis direction. More generally, this is the case where the direction in which the two easy split/cleavage directions are equivalent (the direction in which the symmetry axes of the two easy split/cleavage directions are oriented) becomes the direction of the planned line. In addition, hereinafter, laser light irradiated for each pulse is referred to as unit pulse light.

Fig. 1 is a view schematically showing a processing state of a splitting/cracking process. In FIG. 1, the case where the a1 axis direction is orthogonal to the process planned line L is illustrated. Fig. 1(a) shows the a1 axis direction, the a2 axis direction, and the a3 axis direction and processing in this case. A map of the orientation relationship of the predetermined line L. Fig. 1(b) shows a state in which the unit pulse light of the first pulse of the laser light is irradiated onto the irradiated region RE11 at the end of the processing planned line L.

In general, the irradiation of the unit pulsed light applies a relatively high energy to a very small region of the workpiece, and therefore, the irradiation causes the illuminated surface to be equal to or more irradiated than the irradiated region of the unit pulsed light (laser light). A larger range produces material deterioration, melting, evaporation, and the like.

However, if the irradiation time of the unit pulse light, that is, the pulse width is set to be extremely short, the material having a narrow spot size of the laser light and having a substantially central region of the irradiated region RE11 obtains kinetic energy from the irradiated laser light. In this way, the plasmaization or the high temperature is deteriorated in a gas state or the like, and further scattered in a direction perpendicular to the surface to be irradiated. On the other hand, the reaction force generated by the scattering is represented by the irradiation of the unit pulse light. The generated impact or stress acts on the periphery of the irradiated region, and particularly acts in the a1 axis direction, the a2 axis direction, and the a3 axis direction which are easy to open/crack directions. Thereby, in this direction, although the contact state is maintained in appearance, a slight crack or split occurs locally, or a state in which thermal strain is present inside is generated although the split or split is not achieved. In other words, it can be said that the irradiation of the unit pulse light of the ultrashort pulse functions as a driving force for forming a weak-strength portion which is substantially linear in a plan view in the easy-opening/cracking direction.

In FIG. 1(b), the dotted line arrow schematically indicates the -a2 direction and the +a3 direction in the weak intensity portion formed in each of the easy opening/dissecting directions which are close to the extending direction of the planned line L. Weak strength portions W11a, W12a.

Then, as shown in FIG. 1(c), when the unit pulse light of the second pulse of the laser light is irradiated, the irradiated area RE12 is formed on the planned line L at a position separated by only a certain distance from the irradiated area RE11. Similarly to the first pulse, a weak intensity portion along the easy-opening/cracking direction is also formed under the second pulse. For example, the weak intensity portion W11b is formed in the -a3 direction, the weak intensity portion W12b is formed in the +a2 direction, the weak intensity portion W12c is formed in the +a3 direction, and the weak intensity portion W11c is formed in the -a2 direction.

However, at this point of time, the weak intensity portions W11a and W12a formed by the irradiation of the unit pulse light of the first pulse exist in the extending directions of the weak intensity portions W11b and W12b, respectively. In other words, the direction in which the weak-strength portions W11b and W12b extend can be a portion that can be cleaved or split (high energy absorption rate) by using energy smaller than other portions. Therefore, in actuality, if the unit pulse light of the second pulse is irradiated, the impact or stress generated at this time propagates toward the easy-opening/cracking direction and the weak intensity portion existing in front of it, substantially at the moment of irradiation. The self-weakening strength portion W11b to the weak strength portion W11a, and the weakening strength portion W12b to the weak strength portion W12a are completely split or split. Thereby, the cleaved/clear surfaces C11a and C11b shown in Fig. 1(d) are formed. Further, the cleavage/clearing surfaces C11a and C11b can be formed to a depth of about several μm to several tens of μm in the vertical direction in the drawing of the workpiece. Further, on the cleavage/clear surfaces C11a and C11b, as a result of strong impact or stress, the crystal surface is slid, and undulations occur in the depth direction.

Further, as shown in FIG. 1(e), if the laser light is scanned along the processing line L, the irradiated areas RE11, RE12, RE13, RE14. . . . When the unit pulse light is irradiated, the linear cleavage/clear surfaces C11a and C11b, C12a and C12b, C13a and C13b in the drawing are sequentially formed along the planned line L by the impact or stress generated during the irradiation. , C14a and C14b... In the above aspect, the cleavage/cleavage surface is formed continuously, which is the basic principle of the splitting/cleaving process in the present embodiment.

From another point of view, it can be said that the thermal energy is imparted by the irradiation of the unit pulsed light, whereby the surface layer portion of the workpiece is inflated in the irradiated regions RE11, RE12, RE13, RE14. . . . The larger central region of each of them is further to the outside, and the vertical tensile stress acts on the cleavage/clear surfaces C11a and C11b, C12a and C12b, C13a and C13b, C14a and C14b..., thereby causing splitting/cracking Progress.

That is, in the case shown in FIG. 1, the plurality of irradiated regions discretely existing along the planned line L and the cleavage/clear plane formed between the plurality of irradiated regions are processed along the entire processing. The starting point of the division when the predetermined line L divides the workpiece. After the division start point is formed, the division using a specific jig or device is performed, whereby the workpiece can be divided substantially in the state along the planned line L.

Further, in the case shown in FIG. 1, the unit pulse light is irradiated so that the planned line is perpendicular to any of the a1 axis direction, the a2 axis direction, and the a3 axis direction, and instead, the planned line may be processed. The unit pulse light is irradiated so as to be parallel to any of the a1 axis direction, the a2 axis direction, and the a3 axis direction, or may be two of the irradiated regions alternately along the predetermined line L for clamping. The form of the easy-opening/cracking direction is formed into a zigzag pattern (Z-shape), and the unit of each irradiated area is formed by irradiation. The state of pulsed light.

In order to realize the split/crack processing as described above, it is necessary to irradiate the short-pulse laser light having a short pulse width. Specifically, it is necessary to use laser light having a pulse width of 100 psec or less. For example, it is preferable to use laser light having a pulse width of about 1 psec to 50 psec.

<At the same time multi-focus processing>

In the present embodiment, the multi-focus processing is further developed by the split/split processing of the above-described principle, and the starting point of the division is formed in the workpiece. Fig. 2 is a view schematically showing a state of simultaneous multifocal processing. Fig. 3 is a view showing a comparison of a traveling mode and a focus position of pulsed laser light in simultaneous multifocal processing with a normal splitting/cracking process according to the above-described processing principle. Fig. 3(a) shows the case of simultaneous multifocal processing, and Fig. 3(b) shows the case of the usual split/split processing of irradiating only a single pulsed laser light LB.

In the present embodiment, the simultaneous multifocal processing generally refers to a processing aspect in which a plurality of pulsed laser beams are irradiated on the illuminated surface of each unit pulsed light in space and temporally become The same, and the respective focus positions are different from each other in the depth position of the workpiece, and are irradiated from the irradiation lens, and scanned along the planned line under the condition that the irradiation position is dispersed on the irradiation surface. The splitting/cracking in the direction along the planned line is generated at different depth positions of the workpiece.

Further, in the present embodiment, the position to be irradiated refers to the center position of the irradiated area of the unit pulse light on the surface to be irradiated of the workpiece (mesh) Target position). Specifically, in the simultaneous multifocal processing, the unit pulse light of each pulsed laser light is irradiated at the same position, but the irradiated area may be different.

In addition, the irradiation lens refers to a lens that is disposed opposite to the surface to be irradiated (machined surface) of the workpiece, and is a direct source of the pulsed laser light for the workpiece.

Further, the irradiation position of the unit pulse light on the illuminated surface is spatially and temporally the same, and the irradiation time of all the pulsed laser light is the same for each of the irradiated positions of the workpiece along the planned line.

According to the simultaneous multifocal processing, by appropriately setting the distance from the irradiation lens of each pulsed laser light to the focus position, a large cleavage/劈 of the cleavage/cleavage plane formed by each pulsed laser light is formed. The face. That is, the division starting point can be formed at a deeper position than in the case of irradiating only a single pulsed laser light.

Further, the focus position referred to in the present embodiment does not necessarily mean a position separated from the illumination lens by only its focal length. The reason for this is that the focus is a value inherent to the lens or the lens group. Generally, there is only one focus on one side of the lens. Therefore, it is not possible to define a plurality of different focus positions on the one side with respect to one illumination lens. In the case of the present embodiment, in the case of the present embodiment, the irradiation lens is used in common, but a plurality of different lens groups are prepared to be different, and the combined focal lengths of the respective lenses are different, thereby realizing that the focus positions of the multi-beam pulsed laser light are different. status. In the above case, for the sake of convenience, the case where only the lens of the illuminating lens is constituted is also considered to form the lens group, and in the above case, the focal length of the illuminating lens is regarded as the combined focal length.

As a typical example of simultaneous multifocal processing, FIG. 2 and FIG. 3(a) show a case where two types of pulsed laser light having different focal positions are superimposed and irradiated. More specifically, as an example of the irradiation pattern of the pulsed laser light at the time of simultaneous multifocal processing, the case where the optical axis AX is shared and the lens LE from the illumination is focused to the focus position is illustrated in FIGS. 2 and 3(a). The first processing laser light LBα and the second processing laser light LBβ which are different in the depth direction (thickness direction) of the workpiece S are irradiated with the irradiation time of each unit pulse light and the irradiated surface. The irradiation position is uniformly superimposed while being irradiated, and the irradiation position is relatively scanned with respect to the workpiece S so as to be discrete along the planned line.

More specifically, in FIG. 2 and FIG. 3(a), the focal point Fα of the first processing laser light LBα incident on the illumination lens LE as parallel light is incident on the incident light of the non-parallel light. The focus Fβ of the second processing laser light LBβ to the irradiation lens LE is located deeper.

Further, in the present embodiment, the term "laser light" is a parallel light means that the beam diameter of the laser beam does not substantially change in the direction of the optical axis (not intentionally changed). On the other hand, the laser light whose beam diameter changes in the direction of the optical axis changes is referred to as non-parallel light. For example, when parallel light is incident on a concave lens or the like, the outgoing light from the concave lens becomes non-parallel light (divergent light).

In the case shown in FIG. 2 and FIG. 3(a), the split/cleavage of the unit pulse light by the first processing laser light LBα is generated at the depth position of the focus Fα and its vicinity, and the depth position of the focus Fβ is generated. In the vicinity thereof, splitting/cracking of the unit pulse light using the second processing laser light LBβ is generated. As shown in Figure 2 arrow AR1 As shown in the above, when the first processing laser light LBα and the second processing laser light LBβ are superposed on each other while moving relative to the workpiece S, the cleavage/clear surface formed by the two is not only relatively The direction of movement is continuous and also continuous in the depth direction, and as a result, a cleavage/clear plane having a large diffusion in the depth direction is formed.

In the normal case where only a single pulsed laser light LB is irradiated as shown in Fig. 3(b), it is necessary to specify the position of the focus F in such a manner that the surface of the workpiece is surely opened/split, as shown in Fig. 2 In the case of simultaneous multifocal processing as shown in Fig. 3(a), since the second processing laser light LBβ is irradiated to the vicinity of the surface of the workpiece to cause splitting/cracking, the first processing thunder is used. The cleavage/clear surface directly formed by the irradiation of the LBα does not have to reach the surface of the workpiece.

Therefore, in the case of simultaneous multifocal processing, the position of the focus Fα of the first processing laser light LBα can be set to be deeper than the position of the focus F when the single pulse laser light LB is irradiated/split. The location.

In the case where the two pulsed laser beams are superimposed to perform simultaneous multifocal processing, in order to make the cleavage/clear plane formed by each of them continuous in the depth direction, the focus position of each of the laser light is preferably the distance The closer to the irradiation surface (the second processing laser light LBβ in Fig. 2) is about 4 μm to 45 μm, and the distance from the illuminated surface (the first processing laser light LBα in Fig. 2) is 16 μm. ~60 μm or so.

There are various aspects for the manner in which each of the pulsed lasers in the simultaneous multifocal processing is provided, and as a preferred example thereof, there are the following aspects: The pulsed laser light emitted from one of the exit sources is optically branched in two directions, and the lens group that is shared by the illumination lens and disposed in both is different, thereby superimposing the pulsed laser light of both. In the above case, it is easy to make the irradiation time of the unit pulse light of each pulsed laser light to the illuminated surface substantially the same.

Alternatively, instead of the branch as described above, it is possible to work on the configuration of the illumination lens itself, thereby generating a plurality of bundles of laser light having different focal positions.

In the case of simultaneous multifocal processing, the irradiation pitch of the unit pulse light (the center interval of the irradiation position) may be specified in the range of 3 μm to 50 μm. If the irradiation pitch is larger than the range, the formation of the weak strength portion in the easy splitting/cleaving direction does not progress to the extent that the cleavage/clear surface can be formed, and thus the solution containing the above is surely formed. The viewpoint of the starting point of the division of the rational/reasonable surface is not good. In addition, in terms of scanning speed, processing efficiency, and product quality, the larger the irradiation pitch, the better, but in order to form the cleavage/clear surface more reliably, it is preferable to specify in the range of 3 μm to 30 μm, more preferably It is about 3 μm~20 μm.

At present, when the repetition frequency of the laser light is R (kHz), unit pulse light is emitted from the laser light source every 1/R (msec). When the laser light is relatively moved at a speed V (mm/sec) with respect to the workpiece, the irradiation pitch Δ (μm) is defined by Δ = V / R. Therefore, the scanning speed V of the laser light and the repetition frequency are defined such that Δ is about several μm. For example, it is preferable that the scanning speed V is about 50 mm/sec to 3000 mm/sec, and the repetition frequency R is from 1 kHz to 200 kHz, and particularly preferably from about 10 kHz to 200 kHz. The specific value of V or R is only considering the material or absorption rate, thermal conductivity, melting point, etc. of the workpiece. Appropriate regulations can be.

The laser light is preferably irradiated with a beam diameter of about 1 μm to 10 μm. However, the beam diameter of each of the overlapping laser beams may also be different.

In addition, the irradiation energy (pulse energy) of each laser light may be appropriately determined within a range of 0.1 μJ to 50 μJ. However, in the present embodiment, sufficient processing can be performed in the range of 0.1 μJ to 10 μJ.

Fig. 4 is a SEM (Scanning Electron Microscope) of a single piece obtained by simultaneous multifocal processing of a sapphire single crystal substrate by two pulsed laser light and dividing the substrate along a cleavage/clear plane formed thereby. , scanning electron microscope) like. More specifically, FIG. 4 is an SEM image of the vicinity of the intersection of the upper surface of the divided single piece (the irradiated surface of the workpiece) and the divided surface including the cleavage/clear surface. In the figure, about 1/3 of the upper side is the upper surface, and the other part is the dividing surface. In the simultaneous multifocal processing, the focus position of each pulsed laser light is set to 6 μm from the closer surface to be illuminated, and 16 μm from the far side to be illuminated, and the irradiation interval of the unit pulse light (irradiated position) The center interval is set to 10 μm.

According to Fig. 4, in the portion where the distance of the dividing surface is farther from the irradiation surface, there is a wedge-shaped region extending in the vertical direction and a stripe-shaped portion which is substantially symmetrical with respect to the left and right in the oblique direction. The former is the area illuminated by the unit pulsed light. The latter is a cleavage/clear surface, and the stripe-shaped portion has a slight unevenness of the height difference of about 0.1 μm to 1 μm, and is a strong impact or stress on the workpiece by irradiating the pulsed laser light. This is formed by the sliding of a specific crystal face.

In Fig. 4, the irradiation pitch of the unit pulse light is 10 μm. If this is taken as a reference, the maximum depth of the cleavage/clear surface is about 33 μm. Generally, the maximum depth of the cleavage/clear surface (the depth of the starting point) in the cleavage/cracking process is at most about 12 μm. Therefore, by performing simultaneous multifocal processing, it is usually about 3 times deep. The position forms a starting point for the segmentation. Thereby, by performing simultaneous multifocal processing and dividing, the workpiece can be divided with higher precision.

As described above, in the present embodiment, by performing the multifocal processing in which the above-described splitting/cracking processing is further developed, the occurrence of deterioration or scattering of the workpiece is stopped, and the processing is performed on the other hand. The splitting or splitting of the object is actively generated not only in the direction of the planned line but also in the depth direction, whereby the split starting point can be formed at a very high speed on the divided body.

<Overview of laser processing equipment>

Fig. 5 is a view schematically showing the configuration of a laser processing apparatus 100 capable of realizing simultaneous multifocal processing in the present embodiment. Further, the laser processing apparatus 100 is not limited to simultaneous multifocal processing, and the laser processing apparatus 100 may perform groove processing or boring processing on the workpiece by appropriately changing the irradiation state of the optical system or the pulsed laser light. As shown in FIG. 5, the laser processing apparatus 100 mainly includes a stage portion 10 and an optical system 20. Further, the laser processing apparatus 100 includes a control unit (not shown) that controls the operation of each unit.

The stage unit 10 mounts a portion where the workpiece S is fixed. The stage unit 10 includes an adsorption mechanism (not shown) that can adsorb and fix the workpiece S placed on the upper surface 10a of the stage unit 10. In addition, the stage 10 includes a mobile machine With a configuration of 10 m, horizontal movement in two orthogonal directions and rotational movement in a horizontal plane can be performed by the action of the moving mechanism 10m.

The optical system 20 is a portion for irradiating the workpiece S mounted on the stage portion 10 with laser light. The optical system 20 mainly includes a laser light source 21 and three 1/2 wavelength plates 22 (a first 1/2 wavelength plate 22a, a second 1/2 wavelength plate 22b, and a third 1/2 wavelength plate 22c), The four polarization beam splitters 23 (the first polarization beam splitter 23a, the second polarization beam splitter 23b, the third polarization beam splitter 23c, and the fourth polarization beam splitter 23d) and the focus position adjustment lens 24 (the first adjustment lens 24a, The second adjustment lens 24b) and the illumination lens 25.

The laser light source 21 emits laser light LB0 which is linearly polarized and parallel light. As the above-described laser light source 21, various well-known light sources can be used. It is only necessary to use an appropriate light source depending on the purpose of processing. Preferably, Nd:YAG (Neodymium-doped Yttrium Aluminium Garnet) laser light, Nd:YVO ₄ (Neodymium-doped Yttrium Orthovanadate) or other solid laser light is used. Aspect. Further, a shutter ST is attached to the laser light source 21.

For example, in the case where a scribe line is formed at a dicing street position of an LED substrate using a sapphire single crystal substrate as a base substrate, it is preferable to use a psec laser. Further, in the present embodiment, the LED substrate refers to a semiconductor substrate on which an LED circuit pattern constituting a unit pattern of each of the LEDs is two-dimensionally arranged, and the dicing means means dividing the LED substrate into individual LEDs. The predetermined position is divided when the wafer is singulated.

The laser beam LB0 emitted from the laser light source 21 by opening the shutter ST is appropriately adjusted by the first 1/2 wavelength plate 22a provided on the optical path P0. The degree of polarization (the ratio of P-polarized to S-polarized).

The laser beam LB0 passing through the first 1/2 wavelength plate 22a reaches the first polarization beam splitter 23a provided on the optical path P0. The first polarization beam splitter 23a branches the laser light LB0 into the first branched light LB1 that travels along the first branched optical path P1 and the second branched light LB2 that travels along the second branched optical path P2. In other words, the first polarization beam splitter 23a functions as a branching unit that branches the laser light LB0 into the first branched light LB1 and the second branched light LB2.

More specifically, the first polarization beam splitter 23a emits the first branched light LB1 as P-polarized transmitted light, and the second branched light LB2 is emitted as reflected light of the S-polarized light. In addition, as the polarization beam splitter 23 represented by the first polarization beam splitter 23a, a transmission efficiency of 90% to 95% and a reflection efficiency of about 99% are used. Thereby, the optical loss of the polarization beam splitter 23 is minimized.

The first branched optical path P1 and the second branched optical path P2 are appropriately changed in direction by the first branching mirror 26 or the second reflecting mirror 27 provided in the middle to reflect the first branched light LB1 or the second branched light LB2. .

Further, in FIG. 5, the first mirror 26 and the second mirror 27 are arranged in a plane in which only the pulsed laser light is reflected in the plane formed in the drawing, but this is merely for convenience of illustration. Further, the number of the first reflecting mirror 26 and the second reflecting mirror 27 is not limited to the case illustrated in Fig. 5 . In other words, the first mirror 26 and the second mirror 27 are provided in an appropriate number, arrangement position, and posture in accordance with the layout and the like of the components constituting the optical system 20.

The first branch optical path P1 includes the second 1/2 wavelength plate 22b and the second polarization beam splitter 23b in this order in the direction in which the first branched light LB1 travels. In addition, the first point The branch optical path P1 is configured such that the first branched light LB1 that is P-polarized and transmitted through the second polarization beam splitter 23b reaches the fourth polarization beam splitter 23d.

The second half-wavelength plate 22b and the second polarization beam splitter 23b are provided for adjusting the amount of light of the first branched light LB1. Specifically, when the first branched light LB1 emitted from the first polarization beam splitter 23a as the P-polarized light does not have the second 1/2 wavelength plate 22b, the second polarization beam splitter 23b is transmitted through the transmission efficiency. On the other hand, when the second 1/2 wavelength plate 22b is provided as described above, the degree of polarization can be adjusted by the second 1/2 wavelength plate 22b, so that the second polarization beam splitter 23b can be transmitted. The ratio of the P-polarized light of the first branched light LB1 is adjusted. Thereby, as a result, the amount of light of the first branched light LB1 is adjusted.

On the other hand, the second branched optical path P2 includes the third half-wavelength plate 22c, the third polarization beam splitter 23c, and the focus position adjustment lens 24 in this order in the direction in which the second branched light LB2 travels. In addition, in the second branch optical path P2, the second branched light LB2 which is the S-polarized light reflected by the third polarization beam splitter 23c passes through the focus position adjustment lens 24 and reaches the fourth polarization beam splitter. The structure of 23d.

Further, in the second branched optical path P2, the two second reflecting mirrors 27 are freely movable by the moving mechanism 27m. Thereby, in the laser processing apparatus 100, the optical path length of the 2nd branched optical path P2 can be adjusted suitably.

The third half-wavelength plate 22c and the third polarization beam splitter 23c are provided for adjusting the amount of light of the second branched light LB2. Specifically, when the second branched light LB2 emitted from the first polarization beam splitter 23a as the S-polarized light does not have the third 1/2 wavelength plate 22c, the third polarization splitting is performed with the above-described reflection efficiency. The mirror 23c reflects. On the other hand, when the third 1/2 wavelength plate 22c is provided as described above, the degree of polarization can be adjusted by the third 1/2 wavelength plate 22c, so that it can be reflected by the third polarization beam splitter 23c. The ratio of the S-polarized light of the second branch light LB2 is adjusted. Thereby, as a result, the amount of light of the second branched light LB2 is adjusted.

Further, in the case shown in FIG. 5, the first position adjustment lens 24a as a concave lens and the second adjustment lens 24b as a convex lens constitute a focus position adjustment lens 24. In the above-described case, the second branching light LB2 that is incident on the first adjustment lens 24a as the parallel light is divergent light that is non-parallel light that is diffused around the optical axis as it goes forward, and is emitted from the first adjustment lens 24a. In the second projection lens 23b, the degree of diffusion around the optical axis is adjusted, but the state of the non-parallel light reaches the fourth polarization beam splitter 23d.

The first branch optical path P1 and the second branched optical path P2 merge with the fourth polarization beam splitter 23d to form a common optical path P3. The illumination lens 25 is provided on the common optical path P3, and the stage 10 is located in front of the illumination lens 25.

The first branched light LB1 which is the P-polarized light passing through the first branched optical path P1 passes through the fourth polarizing beam splitter 23d and travels along the common optical path P3, passes through the irradiation lens 25, and is irradiated onto the stage placed on the stage 10 Process S. Since the lens provided on the first branch optical path P1 and the common optical path P3 connected thereto is only the illumination lens, the first branched light LB1 is irradiated with the focus position of the illumination lens 25 with only the focal length therebetween. On the workpiece S.

On the other hand, the second branched light LB2 which is the S-polarized light passing through the second branched optical path P2 is reflected by the fourth polarizing beam splitter 23d and travels along the common optical path P3, passes through the irradiation lens 25, and is irradiated onto the stage. Part 10 is processed S. In this case, since the lens group including the focus position adjustment lens 24 and the illumination lens 25 is provided in the second branch optical path P2 and the common optical path P3 connected thereto, the second branched light LB2 is separated from the illumination lens 25. Only the position of the composite focal length of the lens group is the focus position and is irradiated onto the workpiece S.

According to the laser processing apparatus 100 having the above-described configuration, in general, the stage portion 10 on which the workpiece S is placed and fixed is appropriately moved, and the focus is irradiated to the workpiece S. The first branch light LB1 and the second branch light LB2 having different positions can perform various processing on the desired processing position of the workpiece S. A representative processing aspect is the simultaneous multifocal processing described above.

In other words, when the laser light source 21 is used to emit pulsed laser light having ultrashort pulse light having a pulse width of 100 psec or less, the optical path lengths of the first branched optical path P1 and the second branched optical path P2 are equal. By adjusting the arrangement position of the second reflecting mirror 27 by the moving mechanism 27m, and appropriately setting the height position of the irradiation lens 25 and the arrangement position of the focus position adjustment lens 24 on the second branch optical path P2, the first branched light is thereby provided. The focus position of the LB1 and the second branched light LB2 is set inside the workpiece S, and the irradiation condition of the repetition frequency of the pulsed laser light, the beam diameter, or the moving speed of the stage portion 10 is appropriately set, and laser processing is possible. Simultaneous multifocal processing is preferably performed in device 100. In this case, when the focus position adjustment lens 24 is disposed such that the combined focal length of the lens group including the focus position adjustment lens 24 and the illumination lens 25 is shorter than the focal length of the illumination lens 25, the first branch light LB1 becomes The first processing laser light LBα and the second branch light LB2 become the first 2 Processing laser light LBβ can perform simultaneous multifocal processing in the state shown in Fig. 2 and Fig. 3(a).

<Modification>

The processing that can be performed in the laser processing apparatus 100 is not limited to the simultaneous multifocal processing described above. For example, it is also possible to perform processing using a laser light source 21 that emits pulsed laser light having a larger pulse width. Further, it is also possible to perform processing under the condition that the pulsed laser light is irradiated under the condition that the irradiation position of each single pulse light is continuous. In addition, it is possible to perform processing in a state where the irradiation time of the first processing laser light LBα and the second processing laser light LBβ is different by adjusting the optical path length of the second branched optical path P2.

Further, in the above laser processing apparatus, by causing the laser light LB0 to be branched into both the first branch optical path P1 and the second branched optical path P2, the workpiece S can be irradiated with two pulsed laser beams having different focus positions. The laser processing apparatus may have a configuration in which three or more pulsed laser beams having different focal positions are irradiated to the workpiece S by providing more branch optical paths and making the combined focal lengths of the respective lens groups different from each other. .

10‧‧‧The Stage Department

10m‧‧‧Mobile agencies

11a‧‧‧Weak strength section

20‧‧‧Optical system

21‧‧‧Laser light source

22‧‧‧1/2 wavelength plate

23‧‧‧Polarizing beam splitter

24‧‧‧ Focus position adjustment lens

25, LE‧‧‧ illumination lens

26‧‧‧1st mirror

27‧‧‧2nd mirror

27m‧‧‧Mobile agencies

100‧‧‧ Laser processing equipment

AR1‧‧‧ arrow

AX‧‧‧ optical axis

C11a~C14a, C11b~C14b‧‧‧Cleavage/Processing Surface

F, Fα, Fβ‧‧‧ focus

L‧‧‧Processing line

LB, LB0‧‧‧ (pulse) laser light

LB1‧‧‧1st branch light

LB2‧‧‧2nd branch light

LBα‧‧‧1st processing laser light

LBβ‧‧‧2nd processing laser light

P0‧‧‧Light Road

P1‧‧‧1st branch light path

P2‧‧‧2nd branch light path

P3‧‧‧ shared light path

RE11, RE12, RE13, RE14‧‧‧ illuminated areas

S‧‧‧Processed objects

ST‧‧·Shutter

W11a~W11c, W12a~W12c‧‧‧ weak intensity part

1(a) to (e) are diagrams schematically showing the processing state of the splitting/cracking process.

Fig. 2 is a diagram schematically showing the case of simultaneous multifocal processing.

3(a) and 3(b) are diagrams showing the manner in which the traveling mode and the focus position of the pulsed laser light in the simultaneous multifocal processing are compared with the normal split/split processing.

Figure 4 is a sapphire single crystal substrate subjected to simultaneous multifocal processing by segmentation. The SEM image of the divided single piece obtained by the plate.

FIG. 5 is a view schematically showing the configuration of the laser processing apparatus 100.

AR1‧‧‧ arrow

AX‧‧‧ optical axis

LBα‧‧‧1st processing laser light

LBβ‧‧‧2nd processing laser light

LE‧‧‧Illumination lens

S‧‧‧Processed objects

Claims (7)

A method for processing a workpiece, which is characterized in that a method for forming a starting point of a segment on a workpiece is used, and a focus position of each of the plurality of beams of laser light is different from inside the workpiece. a depth position and simultaneously performing an irradiation step and a scanning step, and at the different depth positions of the workpiece, a split or split of the workpiece in a direction along a planned line is generated, thereby forming on the workpiece a starting point for dividing, wherein the irradiating step is performed such that one of the irradiated positions on the illuminated surface of each unit pulsed light is spatially and temporally identical, and is disposed from the object to be processed. The lens superimposes the ultrashort pulse light having a pulse width of 1 to 50 psec, that is, the plurality of pulsed laser light; and the scanning step scans the plurality of beams along the processing line under the condition that the irradiated position is discrete on the irradiation surface Pulsed laser light. The processing method of the workpiece according to claim 1, wherein the plurality of branched light beams generated by optically branching the laser beam from a light source to a plurality of branched light paths are set as the plurality of bundles And a plurality of branching optical paths, wherein each of the plurality of branching optical paths is provided with a lens group having a different focal length in combination with the one illumination lens, and the plurality of pulsed ray irradiated from the irradiation lens to the irradiated position The focus of each of the light is different. The processing method of the workpiece according to claim 2, wherein the plurality of pulsed lasers are optically branched into the first and second branched optical paths by the one-shot pulsed laser light emitted from the one light source. In the first and second pulsed laser beams, the lens group provided in the first branch optical path is only the one of the illumination lenses, and the focal length of the illumination lens is separated from the one illumination lens. The first pulsed laser beam is irradiated so that the position is the focus position, and the lens group including the one illumination lens and the at least one focus position adjustment lens is provided in the second branch optical path. The composite focal length of the set is a value different from the focal length of the illumination lens, whereby the focus position of the second pulsed laser light is different from the focus position of the first pulsed laser light. The processing method of the workpiece according to any one of claims 1 to 3, wherein in the scanning step, the direction of the predetermined line to be processed is set to be different from the workpiece to be opened or split. The direction is the equivalent direction. The method of processing a workpiece according to any one of claims 1 to 3, wherein in the scanning step, the direction of the predetermined line to be processed coincides with an easy opening or splitting direction of the workpiece. The processing method of the workpiece according to any one of claims 1 to 3, wherein in the scanning step, the direction of the predetermined line to be processed is different from the two different easy-opening or splitting directions of the workpiece Change alternately. A method of dividing a workpiece, characterized in that it is a method of dividing a workpiece, and dividing the starting point of the dividing starting point by the above method according to any one of claims 1 to 3 along a dividing starting point Processed material.