JP2013247147A - Processing object cutting method, processing object, and semiconductor element - Google Patents

Processing object cutting method, processing object, and semiconductor element Download PDF

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JP2013247147A
JP2013247147A JP2012117805A JP2012117805A JP2013247147A JP 2013247147 A JP2013247147 A JP 2013247147A JP 2012117805 A JP2012117805 A JP 2012117805A JP 2012117805 A JP2012117805 A JP 2012117805A JP 2013247147 A JP2013247147 A JP 2013247147A
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substrate
semiconductor
along
plane
hexagonal compound
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Japanese (ja)
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Yoko Tariki
洋子 田力
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Hamamatsu Photonics Kk
浜松ホトニクス株式会社
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/083Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00Severing cooled glass
    • C03B33/02Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/0222Scoring using a focussed radiation beam, e.g. laser

Abstract

PROBLEM TO BE SOLVED: To provide a processing object cutting method, a processing object and a semiconductor element capable of manufacturing a semiconductor element while suppressing the influence of the crystal structure of a hexagonal compound.
SOLUTION: Cutting scheduled lines 51 and 52 for cutting a workpiece 1 are set so as not to be parallel to the a-plane and m-plane of a hexagonal compound. Then, the modified regions 71 and 72 are formed by irradiating the laser beam L along the scheduled cutting lines 51 and 52 set as described above, and the workpiece 1 is cut using the modified regions 71 and 72 as starting points. To do. As a result, the semiconductor element 10 can be manufactured by cutting the workpiece 1 while suppressing the influence of the crystal structure of the hexagonal compound constituting the substrate 31.
[Selection] Figure 7

Description

  The present invention relates to a processing object cutting method, a processing object, and a semiconductor device for manufacturing a semiconductor element by cutting the processing object.

  As a conventional method for cutting an object to be processed in the above technical field, Patent Document 1 discloses that separation grooves are formed on the front and back surfaces of a sapphire substrate by dicing or scribing, and a work-affected portion is formed in the sapphire substrate by irradiation with laser light. A method is described in which the sapphire substrate is cut along a separation groove and a work-affected portion, formed in multiple stages.

JP 2006-245043 A

  By the way, in order to cut a processing object comprising a substrate having a front surface and a back surface, which is composed of a hexagonal compound such as sapphire described above and has an off-angle angle with the c-plane of the hexagonal compound, the surface of the substrate is cut. There are cases where the cutting target line parallel to the back surface and the a-plane of the hexagonal compound and the cutting target line parallel to the front and back surfaces of the substrate and the m-plane of the hexagonal compound are set as the workpiece. In such a case, when the object to be processed is cut from the modified region formed in the substrate by irradiating the laser beam along each planned cutting line, the crystal structure of the hexagonal compound is changed. May affect cutting.

  The present invention has been made in view of such circumstances, and a processing object cutting method, a processing object, and a semiconductor element capable of cutting a processing object while suppressing the influence of the crystal structure of a hexagonal compound. It is an issue to provide.

  In order to solve the above-described problem, a workpiece cutting method according to the present invention includes a substrate made of a hexagonal compound and having a front surface and a back surface that form an off-angle angle with the c-plane of the hexagonal compound, A first step of preparing a workpiece having a plurality of semiconductor element portions formed on the surface and arranged in a matrix along the first and second directions, and a condensing point of the laser beam are aligned in the substrate The first scheduled cutting line is moved by relatively moving the condensing point along each of a plurality of first scheduled cutting lines set along the first direction so as to pass between adjacent semiconductor element portions. And a second step of forming a first modified region in the substrate along each of the above, and a laser beam condensing point in the substrate, and along the second direction so as to pass between adjacent semiconductor element portions Each of the plurality of second scheduled cutting lines set A third step of forming a second modified region in the substrate along each of the second scheduled cutting lines by relatively moving the condensing point along the first and second scheduled cutting lines By applying an external force to the object to be processed along each, the object to be processed is cut along each of the first and second scheduled cutting lines starting from the first and second modified regions, and the semiconductor element portion A first step is a direction parallel to the front surface and the back surface of the substrate and intersecting the a-plane and the m-plane of the hexagonal compound, and a first step. The two directions are parallel to the front and back surfaces of the substrate and perpendicular to the first direction.

  In this processing object cutting method, first, a processing object is prepared. The workpiece to be prepared here is composed of a hexagonal compound, and has a substrate having front and back surfaces that form an off-angle angle with the c-plane, and a plurality of semiconductor element portions formed on the surface of the substrate. doing. The semiconductor element portion is parallel to the front and back surfaces of the substrate, and intersects the a-plane and m-plane of the hexagonal compound, and is parallel to the front and back surfaces of the substrate and orthogonal to the first direction. Are arranged in a matrix along the second direction. And the cutting planned line for cut | disconnecting the said process target object is set along a 1st direction and a 2nd direction so that it may pass between adjacent semiconductor element parts. That is, the line to be cut is set so as not to be parallel to the a-plane and the m-plane of the hexagonal compound. In this method of cutting an object to be processed, a modified region is formed by irradiating a laser beam along the planned cutting line set as described above, and the object to be processed is cut using the modified region as a starting point. For this reason, according to this processing object cutting method, a processing object can be cut and a semiconductor element can be manufactured, suppressing the influence of the crystal structure of the hexagonal compound which constitutes a substrate. The off angle includes the case of 0 °. In that case, the front and back surfaces of the substrate are parallel to the c-plane of the hexagonal compound.

  In the processing object cutting method according to the present invention, in the second step, the back surface of the substrate is used as a laser light incident surface, and the first crack generated from the first modified region is made to reach the back surface of the substrate. In the third step, the back surface of the substrate is used as the laser light incident surface, and the second crack generated from the second modified region reaches the back surface of the substrate. In the fourth step, an external force is applied to the workpiece. Thus, the workpiece can be cut by extending the first and second cracks. In this case, when the modified region is formed inside the substrate, the influence of the laser beam on the semiconductor element portion can be suppressed.

  Here, the object to be processed according to the present invention includes a substrate made of a hexagonal compound and having a surface and a back surface that form an angle corresponding to the c-plane of the hexagonal compound and an off-angle, and a plurality of substrates formed on the surface of the substrate. A plurality of semiconductor element portions, wherein the plurality of semiconductor element portions are parallel to the front surface and the back surface of the substrate and intersect a first plane intersecting the a plane and the m plane of the hexagonal compound. The substrate is parallel to the front surface and the back surface of the substrate and is arranged in a matrix along a second direction orthogonal to the first direction.

  In this workpiece, the cutting line for cutting the workpiece can be set so as not to be parallel to the a-plane and m-plane of the hexagonal compound as described above. Then, by forming a modified region by irradiating a laser beam along the set cutting line so set, and cutting the workpiece from the modified region, the hexagonal compound constituting the substrate The semiconductor element can be manufactured by cutting while suppressing the influence of the crystal structure.

  In addition, a semiconductor element according to the present invention includes a base portion having a front surface and a back surface that are made of a hexagonal compound and form an angle corresponding to the c-plane of the hexagonal compound, and a semiconductor element portion formed on the surface of the base portion. The base has a pair of first side surfaces facing each other while connecting the front surface and the back surface, and a pair of second side surfaces orthogonal to the first side surface while connecting the surface and the back surface. Each of the first side surfaces intersects the a-plane and the m-plane of the hexagonal compound. In this case, it can suppress that the crystal structure of the hexagonal compound which comprises a base influences element characteristics.

  Here, the hexagonal compound described above can be single crystal sapphire, and the semiconductor element portion can be a light emitting element portion for generating light.

  According to the present invention, it is possible to provide a processing object cutting method, a processing object, and a semiconductor element that can cut the processing object while suppressing the influence of the crystal structure of the hexagonal compound.

It is a schematic block diagram of the laser processing apparatus used for formation of a modification area | region. It is a top view of the processing target object used as the object of formation of a modification field. It is sectional drawing along the III-III line of the workpiece shown by FIG. It is a top view of the processing target after laser processing. It is sectional drawing along the VV line of the workpiece shown by FIG. It is sectional drawing along the VI-VI line of the workpiece shown by FIG. It is a top view of the processing target to which the processing target cutting method concerning one embodiment of the present invention is applied. FIG. 8 is a unit cell diagram showing a crystal structure of a hexagonal compound in the workpiece shown in FIG. 7. It is a fragmentary sectional view of the processing target object shown in FIG. It is a fragmentary sectional view which shows the main processes of the workpiece cutting method which concerns on one Embodiment of this invention. It is a fragmentary sectional view which shows the main processes of the workpiece cutting method which concerns on one Embodiment of this invention. It is a fragmentary sectional view which shows the main processes of the workpiece cutting method which concerns on one Embodiment of this invention. It is a perspective view of the light emitting element obtained by the processing object cutting method concerning one embodiment of the present invention.

  Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and redundant description is omitted.

  In the processing object cutting method according to an embodiment of the present invention, the modified region is formed inside the processing object along the planned cutting line by irradiating the processing target with laser light along the planned cutting line. Form. First, the formation of the modified region will be described with reference to FIGS.

  As shown in FIG. 1, a laser processing apparatus 100 includes a laser light source 101 that oscillates a laser beam L, a dichroic mirror 103 that is arranged to change the direction of the optical axis (optical path) of the laser beam L by 90 °, and And a condensing lens 105 for condensing the laser light L. Further, the laser processing apparatus 100 includes a support base 107 for supporting the workpiece 1 irradiated with the laser light L condensed by the condensing lens 105, and a stage 111 for moving the support base 107. In addition, a laser light source control unit 102 that controls the laser light source 101 and a stage control unit 115 that controls the movement of the stage 111 are provided to adjust the output and pulse width of the laser light L.

  In this laser processing apparatus 100, the laser light L emitted from the laser light source 101 has its optical axis changed by 90 ° by the dichroic mirror 103, and the inside of the processing object 1 placed on the support base 107. The light is condensed by the condensing lens 105. At the same time, the stage 111 is moved, and the workpiece 1 is moved relative to the laser beam L along the planned cutting line 5. As a result, a modified region along the planned cutting line 5 is formed on the workpiece 1.

  As shown in FIG. 2, a scheduled cutting line 5 for cutting the workpiece 1 is set in the workpiece 1. The planned cutting line 5 is a virtual line extending linearly. When the modified region is formed inside the workpiece 1, as shown in FIG. 3, the laser light L is cut along the planned cutting line 5 in a state where the focused point P is aligned with the inside of the workpiece 1. (Ie, in the direction of arrow A in FIG. 2). Accordingly, as shown in FIGS. 4 to 6, the modified region 7 is formed inside the workpiece 1 along the planned cutting line 5, and the modified region 7 formed along the planned cutting line 5. Becomes the cutting start region 8.

  In addition, the condensing point P is a location where the laser light L is condensed. Further, the planned cutting line 5 is not limited to a straight line, but may be a curved line, or may be a line actually drawn on the surface 3 of the workpiece 1 without being limited to a virtual line. In addition, the modified region 7 may be formed continuously or intermittently. Further, the modified region 7 may be in the form of a line or a dot. In short, the modified region 7 only needs to be formed at least inside the workpiece 1. In addition, a crack may be formed starting from the modified region 7, and the crack and modified region 7 may be exposed on the outer surface (front surface, back surface, or outer peripheral surface) of the workpiece 1.

  Incidentally, the laser light L here passes through the workpiece 1 and is particularly absorbed near the condensing point inside the workpiece 1, thereby forming the modified region 7 in the workpiece 1. (Ie, internal absorption laser processing). Therefore, since the laser beam L is hardly absorbed by the surface 3 of the workpiece 1, the surface 3 of the workpiece 1 is not melted. In general, when a removed portion such as a hole or a groove is formed by being melted and removed from the front surface 3 (surface absorption laser processing), the processing region gradually proceeds from the front surface 3 side to the back surface side.

  By the way, the modified region formed in the present embodiment refers to a region where the density, refractive index, mechanical strength, and other physical characteristics are different from the surroundings. Examples of the modified region include a melt treatment region, a crack region, a dielectric breakdown region, a refractive index change region, and the like, and there is a region where these are mixed. Further, as the modified region, there may be a region in which the density of the modified region is changed in comparison with the density of the non-modified region in the material to be processed, or lattice defects may be formed (collectively, these are highly dense. Also known as the metastatic region).

  In addition, the area where the density of the melt treatment area, the refractive index change area, the modified area has changed compared to the density of the non-modified area, and the area where lattice defects are formed are further included in these areas and the modified areas. In some cases, cracks (cracks, microcracks) are included in the interface between the non-modified region and the non-modified region. The included crack may be formed over the entire surface of the modified region, or may be formed in only a part or a plurality of parts.

  Further, in the present embodiment, the modified region 7 is formed by forming a plurality of modified spots (processing marks) along the planned cutting line 5. The modified spot is a modified portion formed by one pulse shot of pulsed laser light (that is, one pulse of laser irradiation: laser shot). Examples of the modified spot include a crack spot, a melting treatment spot, a refractive index change spot, or a mixture of at least two of these.

  Considering the required cutting accuracy, required flatness of the cut surface, thickness of the workpiece, type, crystal orientation, etc., the size of the modified spot and the length of the crack to be generated are appropriately determined. It is preferable to control.

  Subsequently, a processing object cutting method according to an embodiment of the present invention will be described. FIG. 7 is a plan view of a processing object to which the processing object cutting method according to the present embodiment is applied. FIG. 8 is a diagram showing a crystal structure of a material constituting the substrate of the object to be processed shown in FIG. FIG. 9 is a partial cross-sectional view of the workpiece shown in FIG. 9A is a cross-sectional view taken along the axis x1 in FIG. 7, and FIG. 9B is a cross-sectional view taken along the axis x2 in FIG. As shown in FIGS. 7 to 9, the workpiece 1 is a wafer including a substrate 31 having a disk shape (for example, a diameter of 2 to 6 inches and a thickness of 50 to 200 μm).

  The substrate 31 is made of a hexagonal compound (here, single crystal sapphire) having a hexagonal crystal structure. In the substrate 31, the c-axis of the hexagonal compound is inclined by an angle θ (for example, 0.1 °) with respect to the thickness direction of the substrate 31. That is, the substrate 31 has an off angle of the angle θ. More specifically, the substrate 31 has a front surface 31a and a back surface 31b that form an angle θ corresponding to the off-angle with the c-plane of the hexagonal compound. In the substrate 31, the m-plane of the hexagonal compound is inclined by an angle θ with respect to the thickness direction of the substrate 31, and the a-plane of the hexagonal compound is parallel to the thickness direction of the substrate 31. ing.

  The workpiece 1 has a plurality of light emitting element portions (semiconductor element portions) 32 formed on the surface 31 a of the substrate 31. The light emitting element portions 32 are arranged in a matrix on the surface 31a of the substrate 31 along the direction of the axis x1 (first direction) and the direction of the axis x2 (second direction). The axis x1 is an axis parallel to the front surface 31a and the back surface 31b of the substrate 31 and along the direction intersecting the a-plane and the m-plane of the hexagonal compound. The intersection angle φ between the a-plane of the hexagonal compound and the axis x1 is, for example, about 45 °.

  The axis x2 is an axis parallel to the front surface 31a and the back surface 31b of the substrate 31 and along a direction substantially orthogonal to the direction of the axis x1. Therefore, the axis x2 is also parallel to the front surface 31a and the back surface 31b of the substrate 31 and intersects the a-plane and m-plane of the hexagonal compound. The intersection angle ψ between the m-plane of the hexagonal compound and the axis x2 is, for example, about 45 °. That is, the light emitting element portion 32 is arranged along the directions of the axes x1 and x2 rotated about 45 ° from the a-plane and the m-plane of the hexagonal compound along the front surface 31a and the back surface 31b of the substrate 31, respectively. Has been.

  Therefore, the arrangement direction of the light emitting element portions 32 is not parallel (not along) either the a-plane or the m-plane of the hexagonal compound. The workpiece 1 is provided with an orientation flat OF so as to be parallel to the a-plane of the hexagonal compound. Therefore, the light emitting element portion 32 is arranged in a direction that is not parallel (not along) the orientation flat.

  As shown in FIG. 9, the light emitting element sections 32 arranged in this way are composed of a semiconductor layer 34 stacked on the surface 31 a of the substrate 31, and a semiconductor layer 35 stacked on the semiconductor layer 34. have. The semiconductor layer 34 has a first conductivity type (for example, n-type). The semiconductor layer 34 is continuously formed over all the light emitting element portions 32. The semiconductor layer 35 has a second conductivity type (for example, p-type) different from the first conductivity type. The semiconductor layer 35 is separated for each light emitting element portion 32 and formed in an island shape. The semiconductor layers 34 and 35 are made of a III-V group compound semiconductor such as GaN, for example, and form a pn junction with each other.

  In the processing object 1, a plurality of cuts are made along the direction of the axis x1 so as to pass between the adjacent light emitting element portions 32 and 32 (more specifically, between the adjacent semiconductor layers 35 and 35). A planned line (first cut planned line) 51 is set, and a plurality of planned cut lines (second cut planned lines) 52 are set along the direction of the axis x2. The planned cutting lines 51 and 52 extend in directions that are not parallel to (or do not follow) the a-plane and m-plane of the hexagonal compound, respectively.

  Subsequently, a processing target cutting method for manufacturing the plurality of light emitting elements (semiconductor elements) by cutting the processing target 1 configured as described above for each light emitting element portion 32 will be described. In this processing object cutting method, first, the processing object 1 described above is prepared (first step). And after affixing the protective tape 41 so that the light emitting element part 32 may be covered with respect to the prepared workpiece 1, it processes on the support stand 107 of the laser processing apparatus 100 mentioned above via the protective tape 41. FIG. The object 1 is placed (see FIGS. 1 and 10).

  Subsequently, as shown in FIG. 10A, the rear surface 31 b of the substrate 31 is set as the incident surface of the laser beam L on the substrate 31, and the condensing point P of the laser beam L is aligned in the substrate 31 to be cut. The condensing point P is relatively moved along each of the lines 51. As a result, a modified region (first modified region) 71 is formed in the substrate 31 along each of the planned cutting lines 51 (that is, along the axis x1 intersecting the a-plane and the m-plane), and the modification is performed. A crack (first crack) 81 generated from the mass region 71 is made to reach the back surface 31b of the substrate 31 (second step). At this time, the crack 81 does not reach the surface 31 a of the substrate 31 but extends from the modified region 71 to the surface 31 a side.

  Subsequently, as shown in FIG. 10B, the rear surface 31 b of the substrate 31 is set as the incident surface of the laser beam L on the substrate 31, and the condensing point P of the laser beam L is aligned in the substrate 31 to be cut. The condensing point P is relatively moved along each of the lines 52. As a result, a modified region (second modified region) 72 is formed in the substrate 31 along each of the planned cutting lines 52 (that is, along the axis x2 intersecting the a-plane and the m-plane), and the modification is performed. A crack (second crack) 82 generated from the quality region 72 is caused to reach the back surface 31b of the substrate 31 (third step). At this time, the crack 82 does not reach the surface 31a of the substrate 31, but extends from the modified region 72 to the surface 31a side.

  As described above, if the modified regions 71 and 72 are formed in the substrate 31 along the planned cutting lines 51 and 52 that are not parallel to the a-plane and the m-plane of the hexagonal compound, the modified regions 71 and 72 are formed. In the cutting of the workpiece 1 starting from, the influence of the crystal structure of the hexagonal compound constituting the substrate 31 (particularly the influence of the r-plane of the hexagonal compound) can be suppressed.

  The modified regions 71 and 72 formed in the substrate 31 include a melt processing region. Further, the crack 81 generated from the modified region 71 and the crack 82 generated from the modified region 72 can reach the back surface 31b of the substrate 31 by appropriately adjusting the irradiation condition of the laser light L. . The irradiation conditions of the laser beam L for causing the cracks 81 and 82 to reach the back surface 31b include, for example, the distance from the back surface 31b to the position where the condensing point P of the laser beam L is aligned, the pulse width of the laser beam L, and the laser beam L pulse pitch (a value obtained by dividing “the moving speed of the condensing point P of the laser beam L relative to the workpiece 1” by “the repetition frequency of the laser beam L”), the pulse energy of the laser beam L, and the like.

  The processing object cutting method will be described. In the subsequent process, by applying an external force to the workpiece 1 along each of the planned cutting lines 51 and 52, the modified areas 71 and 72 formed in the above process are used as starting points, respectively. Then, the workpiece 1 is cut for each of the light emitting element portions 32 (fourth step). More specifically, in this step, first, as shown in FIG. 11, after the expanded tape 42 is attached to the workpiece 1 so as to cover the back surface 31 b of the substrate 31, The workpiece 1 is placed on the receiving member 43 via the expanded tape 42.

  Then, as shown in FIG. 11A, the knife edge 44 is pressed against the workpiece 1 through the protective tape 41 from the surface 31 a side of the substrate 31 along each of the scheduled cutting lines 51. Thus, an external force is applied to the workpiece 1 along each of the scheduled cutting lines 51. Thereby, the crack 81 generated from the modified region 71 is extended to the surface 31 a side of the substrate 31, and the workpiece 1 is cut into a bar shape along each of the scheduled cutting lines 51.

  Subsequently, as shown in FIG. 11B, the knife edge 44 is pressed against the workpiece 1 through the protective tape 41 from the surface 31 a side of the substrate 31 along each of the scheduled cutting lines 52. Thus, an external force is applied to the workpiece 1 along each of the scheduled cutting lines 52. Thereby, the crack 82 generated from the modified region 72 is extended to the surface 31 a side of the substrate 31, and the workpiece 1 is cut into chips along each of the scheduled cutting lines 52.

  In the subsequent step, after the workpiece 1 is cut, the protective tape 41 is removed from the workpiece 1 and the expanded tape 42 is expanded outward as shown in FIG. Thus, the plurality of light emitting elements (semiconductor elements) 10 obtained by cutting the workpiece 1 into chips are separated from each other.

  Thus, the obtained light emitting element 10 is exhibiting the substantially rectangular parallelepiped shape, as FIG. 13 shows. The light-emitting element 10 is made of a hexagonal compound (here, single crystal sapphire), and has a base 31 (substrate 31) having a front surface 31a and a back surface 31b that form an angle θ corresponding to the c-plane of the hexagonal compound and an off-angle. And a light emitting element portion 32 formed on the surface 31a of the base portion.

  The base 31 has a pair of side surfaces (first side surfaces) 31c facing each other while connecting the front surface 31a and the back surface 31b, and a pair of side surfaces (first surfaces) orthogonal to the side surface 31c while connecting the front surface 31a and the back surface 31b. 2 side) 32c. The side surface 31c is a cut surface formed when the workpiece 1 is cut along the planned cutting line 51, for example. The side surface 32c is a cut surface formed when the workpiece 1 is cut along the planned cutting line 52, for example. Accordingly, the side surfaces 31c and 32c of the base portion 31 extend in directions intersecting with the a-plane and m-plane of the hexagonal compound constituting the base portion 31 (that is, not parallel to the a-plane and m-plane).

  As described above, in the processing object cutting method according to the present embodiment, first, the processing object 1 is prepared. The workpiece 1 prepared here is made of a hexagonal compound, and is formed on a substrate 31 having a surface 31a and a back surface 31b that form an angle θ corresponding to the c-plane and an off-angle, and the surface 31a of the substrate 31. And a plurality of light emitting element portions 32. The light emitting element portion 32 is parallel to the front surface 31a and the back surface 31b of the substrate 31, and is parallel to the direction of the axis x1 intersecting the a plane and the m plane of the hexagonal compound, and the front surface 31a and the back surface 31b of the substrate 31. And arranged in a matrix along the direction of the axis x2 orthogonal to the axis x1.

  Then, the planned cutting line 51 and the planned cutting line 52 for cutting the workpiece 1 are set along the directions of the axes x1 and x2 so as to pass between the adjacent light emitting element portions 32 and 32, respectively. Is done. That is, in this processing object cutting method, the planned cutting lines 51 and 52 are set so as not to be parallel to the a-plane and the m-plane of the hexagonal compound. In this workpiece cutting method, the modified regions 71 and 72 are formed by irradiating the laser beam L along the scheduled cutting lines 51 and 52, and the modified regions 71 and 72 are formed. The processing object 1 is cut from the starting point. For this reason, according to this processing object cutting method, while suppressing the influence of the crystal structure of the hexagonal compound constituting the substrate 31 (particularly, the influence of the r-plane of the hexagonal compound), each light emitting element portion 32 The light emitting element 10 can be manufactured by cutting the workpiece 1.

  Moreover, in the processing object 1 which concerns on this embodiment, the cutting planned lines 51 and 52 for cut | disconnecting the said processing object 1 are each on the a surface and m surface of a hexagonal system compound as mentioned above. It can be set not to be parallel. Then, the modified regions 71 and 72 are formed by irradiating the laser beam L along the scheduled cutting lines 51 and 52 set as described above, and the workpiece 1 is cut using the modified regions 71 and 72 as starting points. By doing so, it is possible to manufacture the semiconductor element 10 by cutting the workpiece 1 while suppressing the influence of the crystal structure of the hexagonal compound constituting the substrate 31.

  The above embodiments describe one embodiment of the processing object cutting method, the processing object, and the semiconductor element according to the present invention. Therefore, the processing object cutting method, the processing object, and the semiconductor element according to the present invention are not limited to those described above. The processing object cutting method, the processing object, and the semiconductor element according to the present invention shall be arbitrarily modified from those described above without departing from the scope of the claims described in the claims. Can do.

  For example, the material composing the substrate 31 of the workpiece 1 is not limited to single crystal sapphire, and any hexagonal crystal such as gallium nitride (eg GaN) or silicon carbide (eg SiC) having a hexagonal crystal structure. System compounds.

  Further, the crossing angles φ, ψ of the axes x1 and x2 (that is, the planned cutting line 51 and the planned cutting line 52) with respect to the a-plane and m-plane of the hexagonal compound constituting the substrate 31 of the workpiece 1 respectively. Is not limited to 45 °, and can be 30 ° (−30 °) or 60 ° (−60 °).

  Further, the orientation flat OF in the workpiece 1 is not limited to those parallel to the a-plane of the hexagonal compound constituting the substrate 31 of the workpiece 1. For example, the a-plane and the m-plane of the hexagonal compound are included. Can be formed in parallel to the axis x1 and the axis x2 intersecting with.

  Furthermore, the workpiece 1 may have a semiconductor element portion for an arbitrary functional element instead of the light emitting element portion 32.

  DESCRIPTION OF SYMBOLS 1 ... Processing object, 10 ... Light emitting element (semiconductor element), 31 ... Board | substrate (base part), 31a ... Front surface, 31b ... Back surface, 31c ... Side surface (1st side surface), 32c ... Side surface (2nd side surface), 32 ... Light emitting element part (semiconductor element part), 51, 52... Scheduled cutting line, 71, 72... Modified region, 81 .. crack (first crack), 82 ... crack (second crack), L. Focusing point, x1 axis (first direction), x2 axis (second direction).

Claims (6)

  1. A substrate made of a hexagonal compound and having a front surface and a back surface that form an off-angle angle with the c-plane of the hexagonal compound, and a matrix formed on the surface of the substrate along the first and second directions A first step of preparing a workpiece having a plurality of semiconductor element portions arranged in
    The condensing point of the laser beam is aligned within the substrate, and the condensing is performed along each of a plurality of first cutting scheduled lines set along the first direction so as to pass between the adjacent semiconductor element portions. A second step of forming a first modified region in the substrate along each of the first scheduled cutting lines by relatively moving a point;
    The condensing point of the laser beam is aligned in the substrate, and the collection points are arranged along each of a plurality of second scheduled cutting lines set along the second direction so as to pass between adjacent semiconductor element portions. A third step of forming a second modified region in the substrate along each of the second scheduled cutting lines by relatively moving a light spot;
    By applying an external force to the workpiece along each of the first and second scheduled cutting lines, each of the first and second scheduled cutting lines starts from the first and second modified regions. Cutting the workpiece along the line, and manufacturing a semiconductor element including the semiconductor element portion,
    With
    The first direction is parallel to the front surface and the back surface of the substrate and intersects the a-plane and m-plane of the hexagonal compound,
    The second direction is a direction parallel to the front surface and the back surface of the substrate and perpendicular to the first direction.
    A method for cutting an object to be processed.
  2. In the second step, the back surface of the substrate is the incident surface of the laser beam, and the first crack generated from the first modified region reaches the back surface of the substrate,
    In the third step, the back surface of the substrate is the laser light incident surface, and the second crack generated from the second modified region reaches the back surface of the substrate,
    2. The processing according to claim 1, wherein in the fourth step, by applying an external force to the processing object, the first and second cracks are extended to cut the processing object. Object cutting method.
  3. The hexagonal compound is single crystal sapphire,
    The method according to claim 1, wherein the semiconductor element portion is a light emitting element portion.
  4. A processing object comprising a substrate made of a hexagonal compound and having a surface and a back surface that form an off-angle angle with the c-plane of the hexagonal compound, and a plurality of semiconductor element portions formed on the surface of the substrate A thing,
    The plurality of semiconductor element portions are parallel to the front surface and the back surface of the substrate, and intersect a first surface and an m surface of the hexagonal compound, and the front surface and the back surface of the substrate. The workpieces are arranged in a matrix along a second direction perpendicular to the first direction.
  5. The hexagonal compound is single crystal sapphire,
    The processing object according to claim 4, wherein the semiconductor element portion is a light emitting element portion.
  6. A semiconductor device comprising a base portion made of a hexagonal compound and having a base portion having a surface and a back surface that form an off-angle angle with the c-plane of the hexagonal compound, and a semiconductor element portion formed on the surface of the base portion. And
    The base has a pair of first side surfaces that are opposed to each other while connecting the front surface and the back surface, and a pair of second side surfaces that are orthogonal to the first side surface while connecting the front surface and the back surface. ,
    Each of the first side surfaces intersects the a-plane and the m-plane of the hexagonal compound,
    The semiconductor element characterized by the above-mentioned.
JP2012117805A 2012-05-23 2012-05-23 Processing object cutting method, processing object, and semiconductor element Pending JP2013247147A (en)

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PCT/JP2013/063962 WO2013176089A1 (en) 2012-05-23 2013-05-20 Cutting method for item to be processed, item to be processed and semiconductor element
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