JP2014019120A - Method of manufacturing single crystal member for forming internal processing layer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a single crystal member of forming an internal processing layer, capable of efficiently forming a processing layer in the inside of the single crystal member without damaging an irradiated surface of the single crystal member.SOLUTION: A single crystal member of forming an internal processing layer is manufactured which forms a processing layer in the inside of a single crystal member 10, by applying a laser beam B from an irradiated surface 20t of the single crystal member 10 through a condenser lens C. The condenser lens C comprises a main condensing system 85 for forming a plurality of condensing points D in the inside of the single crystal member, and a sub-condensing system 82 for making the laser beam incident on the main condensing system 85. The main condensing system 85 is provided with an aberration correction function of the single crystal member 10, and the sub-condensing system 82 is provided with a cylindrical lens array 80 formed by disposing a plurality of cylindrical lenses 79 in parallel. Then, the pulsed laser beam B is made to pass through the condenser lens C to form the processing layer, while forming the plurality of condensing points D in the inside of the single crystal member 10.

Description

  The present invention relates to a method for manufacturing an internally processed layer-forming single crystal member that forms a processed layer inside a single crystal member by condensing laser light from the irradiated surface of the single crystal member into the single crystal member.

  Conventionally, when manufacturing a semiconductor wafer typified by a single crystal silicon (Si) wafer, a cylindrical ingot solidified from a silicon melt melted in a quartz crucible is cut into blocks of an appropriate length. Then, the peripheral edge is ground to a target diameter, and then the block-shaped ingot is sliced into a wafer shape with a wire saw to manufacture a semiconductor wafer. In this specification, a wafer is appropriately referred to as a substrate unless otherwise specified.

  The semiconductor wafer thus manufactured is subjected to various processes such as formation of a circuit pattern in the previous process in order and used for the subsequent process, and the back surface is back-ground processed in the subsequent process to achieve thinning. Accordingly, the thickness is adjusted to about 750 μm to 100 μm or less, for example, about 75 μm or 50 μm.

  A conventional semiconductor wafer is manufactured as described above, and an ingot is cut by a wire saw, and a cutting allowance larger than the thickness of the wire saw is required for cutting, so a thin semiconductor wafer having a thickness of 0.1 mm or less It is very difficult to manufacture the product, and the product rate is not improved.

  In recent years, silicon carbide (SiC), which has high hardness and high thermal conductivity, has attracted attention as a next-generation semiconductor. In the case of SiC, ingots can be easily formed with a wire saw because of its higher hardness than Si. In addition, it is not easy to slice the substrate, and it is not easy to thin the substrate by back grinding.

  On the other hand, the condensing point of the laser beam is aligned with the inside of the ingot with the condensing lens, and the ingot is relatively scanned with the laser beam, so that a planar processed layer (internally processed layer) by multiphoton absorption inside the ingot. ) And a substrate manufacturing method and a substrate manufacturing apparatus are disclosed in which a part of the ingot is peeled off using the processed layer as a peeling surface.

  For example, Patent Document 1 discloses a technique in which a multi-photon absorption of a laser beam is used, a processing layer is formed inside a silicon ingot, and a wafer is peeled from the silicon ingot using an electrostatic chuck.

JP 2005-277136 A

  By the way, in manufacturing the substrate in this way, it is particularly preferable from the viewpoint of mass production to increase the processing speed when forming the processing layer inside the ingot.

  In view of the above problems, the present invention provides a method for producing an internally processed layer-formed single crystal member capable of efficiently forming a processed layer inside the single crystal member without damaging the irradiated surface of the single crystal member. Is an issue.

  According to one aspect of the present invention for solving the above-described problem, the single crystal member is irradiated with laser light from an irradiated surface of the single crystal member through a laser condensing unit that condenses the laser light. An inner processed layer forming single crystal member formed by forming a processed layer on the inner processed layer forming single crystal member, wherein the laser focusing means has a plurality of focusing points inside the single crystal member. And a sub-condensing system for allowing laser light to enter the main condensing system, the main condensing system having an aberration correction function for the single crystal member, and The condensing system is provided with a cylindrical lens array in which a plurality of cylindrical lenses are arranged integrally or separately in parallel. As the single crystal member, a first surface to be irradiated with laser light and a parallel to the first surface are provided. And a second surface. The processing layer is formed while a plurality of condensing points are formed inside the single crystal member by allowing a pulsed laser beam to pass through the laser condensing means while relatively moving the means and the single crystal member. It is characterized by doing.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the internally processed layer formation single crystal member which can form a processed layer efficiently in a single crystal member can be provided, without damaging the irradiated surface of a single crystal member.

It is a typical bird's-eye view explaining the manufacturing method of the internal processing layer formation single crystal member concerning one embodiment of the present invention. It is typical side surface sectional drawing explaining the manufacturing method of the internal-working layer formation single crystal member which concerns on one Embodiment of this invention. It is typical side surface sectional drawing of the internal-working layer formation single crystal member manufactured by one Embodiment of this invention. It is an example of one Embodiment of this invention, and is a side view explaining the manufacturing method of an internal process layer formation single crystal member. It is an example of one embodiment of the present invention, and is a side view explaining forming a processing layer on a single crystal member with laser light emitted from a condensing lens. It is a top perspective view of the cylindrical lens array provided in the sub light collection system used in one embodiment of the present invention. It is a side view explaining that the metal plate was affixed on both surfaces of the silicon wafer in order to make it peel from a process layer with the manufacturing method of the internal process layer formation single crystal member which concerns on one Embodiment of this invention.

  Embodiments of the present invention will be described below with reference to the accompanying drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic, and the relationship between the thickness and the planar dimensions, the ratio of the thickness of each layer, and the like are different from the actual ones. Accordingly, specific thicknesses and dimensions should be determined in consideration of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.

  Further, the following embodiments exemplify apparatuses and methods for embodying the technical idea of the present invention, and the embodiments of the present invention include the material, shape, structure, The layout is not specified as follows. Various modifications can be made to the embodiment of the present invention within the scope of the claims.

  FIG. 1 shows an embodiment of the present invention (hereinafter referred to as the present embodiment), in which laser light is condensed from an irradiated surface (surface on the irradiated side) of a single crystal member 10 by laser focusing means. FIG. 2 is a schematic bird's-eye view for explaining that the processed layer 21 is formed. FIG. 2 shows the inner processed layer forming single crystal member 20 formed by forming the processed layer 21 inside the single crystal member 10 by laser light irradiation. It is a typical sectional view explaining forming. FIG. 3 is a schematic cross-sectional structure of the internally processed layer forming single crystal member 20 manufactured in the present embodiment.

  The internally processed layer forming single crystal member 20 manufactured in this embodiment is separated from the irradiated surface 20t by condensing the laser beam B from the irradiated surface 20t of the pulsed laser beam B, and the irradiated layer is irradiated. A processed layer 21 extending in parallel with the surface 20t and a non-processed layer 22 at a position in the vertical direction sandwiching the inside of the single crystal member with respect to the processed layer 21 are provided.

  In order to manufacture the single crystal member 20 with the inner processed layer formation and obtain a single crystal substrate, the irradiated laser beam B is irradiated to the irradiated surface 20t of the single crystal member 10 by, for example, a condenser lens C as laser condensing means. Then, while condensing the laser beam B inside the single crystal member 10, the condenser lens C and the single crystal member 10 are moved relatively to extend inside the single crystal member 10 in parallel with the irradiated surface 20 t. The internal processing layer forming single crystal member 20 in which the existing processing layer 21 is formed is manufactured.

  At this time, in the present embodiment, a plurality of laser beams are irradiated from the irradiated surface 20t of the single crystal member 10 through the condensing lens C to form a plurality of condensing points D simultaneously. Layer 21 is formed. The single crystal member 10 includes an irradiated surface 20t (first surface) that irradiates laser light B, and a light emitting surface 20s that is parallel to the irradiated surface 20t and through which the laser light B irradiated to the irradiated surface 20t passes. (Second surface) is used.

  After the processing layer 21 is formed and the inner processing layer forming single crystal member 10 is manufactured, the processing layer 21 is cleaved in a cross-sectional direction perpendicular to and parallel to the scanning direction of the laser beam B, and the processing layer in each direction is exposed. Let

  Next, this exposed surface (processed layer exposed surface) is polished by lapping and polishing. The polishing process can be performed using, for example, a lapping / polishing apparatus. In lapping, a slurry obtained by mixing free abrasive grains having a particle size of 1 μm to several tens of μm as a polishing agent with a lubricant is placed between a lapping plate and the exposed surface of the processed layer. As the free abrasive grains at this time, colloidal silica, alumina, fine diamond, cerium oxide, or the like can be used. In the polishing process, a fine abrasive having a particle size of 1 μm or less is used, and the exposed surface of the processed layer is polished by attaching a polishing pad to a surface plate.

(Specific example of embodiment)
Hereinafter, a specific example of the present embodiment (hereinafter referred to as the present example) will be described. FIG. 4 is an overall view of an example of the laser processing apparatus in this example, and the laser processing apparatus of this example includes a laser oscillator 71, a zoom expander 72, an aperture mask 73, a condenser lens C, and an XY stage 74. The diameter of the laser beam from the laser oscillator 71 is expanded to an arbitrary diameter by the zoom expander 72, and then the optical path is adjusted by a reflection mirror (not shown), and the same diameter or larger than the entrance pupil diameter of the condenser lens C. Adjust the beam diameter to have a diameter. Here, the aperture mask 73 is for removing a non-uniform power portion around the beam, and is arranged in the vicinity of the condenser lens C in order to maintain the uniform power beam state and enter the condenser lens C. . Further, the aperture diameter of the aperture mask 73 is adjusted so that the beam after passing through the aperture mask 73 does not become diffracted light. In other words, if the aperture diameter is too larger than the beam diameter, the non-uniform power portion cannot be removed. Conversely, if the aperture diameter is too small, the beam becomes a diffracted beam and does not become a uniform power beam.

FIG. 5 is a side view for explaining that the processed layer 21 (see FIG. 3) is formed on the single crystal member 10 by the laser light emitted from the condenser lens C in this example. FIG. 6 is a perspective view of the cylindrical lens array 80 constituting the condenser lens C. FIG. The condensing lens C is incident on the sub-condensing system 82 on which the laser light that has passed through the aperture mask 73 enters, and on the laser light emitted from the sub-condensing system 82 and irradiates the single crystal member 10 with the laser light. A main condensing system 85.
The sub-light collection system 82 includes a cylindrical lens array 80 in which a plurality of cylindrical lenses 79 are integrally arranged in parallel, and a cylindrical convex lens 83 that allows light from the cylindrical lens array 80 to pass therethrough. With this configuration, the laser light incident on each cylindrical lens 79 is incident on the cylindrical convex lens 83 after forming a condensing point, and is incident on the main condensing system 85 as an elongated parallel beam on the irradiation surface. Has been. The cylindrical lenses 79 may be separated and arranged in parallel.

  The main condensing system 85 includes an objective lens 86 with a correction ring 88 for correcting aberrations, and aberration correction is possible. Then, the single crystal member 10 is irradiated with a plurality of laser beams (branched laser beams) incident from the sub-condensing system 82.

  In the condensing lens C, when irradiating the single crystal member 10 with the laser light from the main condensing system 85, the condensing lens C condenses by a convex lens function to form a condensing point inside the single crystal member, and the single crystal member 10 The energy density of each laser beam on the irradiated surface 20t is adjusted so as not to damage the irradiated surface 20t (the upper surface in FIG. 5).

  In FIG. 5, one laser beam incident on the sub-condensing system 82 is drawn so as to be branched and emitted from the sub-condensing system 82 into five laser beams. There is no particular limitation, and the number of branches can be changed as appropriate depending on the output of the laser light, the shape of the cylindrical lens 79, and the like.

  The size of the single crystal member 10 that irradiates the laser beam is not particularly limited. For example, the single crystal member 10 is made of a thick silicon wafer E having a diameter of 300 mm, and the irradiated surface Et irradiated with the laser beam B is flattened in advance. It is preferable.

  The laser beam B is irradiated to the irradiated surface 20t via the condenser lens C, not the peripheral surface of the single crystal member 10 such as a silicon wafer. When the single crystal member 10 is made of silicon, the laser beam B is composed of, for example, a pulse laser beam having a pulse width of 1 μs or less, and a wavelength of 900 nm or more, preferably 1000 nm or more is selected. A YAG laser or the like is preferably used. Is done.

(Function, effect)
Hereinafter, manufacturing the internally processed layer-forming single crystal member 10 in this example will be described. In this example, the single crystal member 10 is placed on an XY stage, and the single crystal member 10 is held by a vacuum chuck, an electrostatic chuck, or the like. Then, by moving the single crystal member 10 in the X direction or the Y direction on the XY stage, the condensing lens C and the single crystal member 10 are placed horizontally on the irradiated surface 20t of the single crystal member 10 and on the cylindrical lens 79. The processed layer 21 is formed by the laser beam B condensed inside the single crystal member 10 by irradiating the laser beam B while relatively moving along.

  At that time, the laser beam B incident on the sub-condensing system 82 becomes a plurality of branched laser beams and enters the main condensing system 85. As a result, the laser light emitted from the objective lens 86 of the main condensing system 85 enters as a branched laser light on the irradiated surface 20t, and forms a plurality of condensing points D inside the single crystal member 10. .

  In the present embodiment, each branched laser beam is located closer to the light emitting surface 20s than the intermediate surface 20m, which is an intermediate position between the irradiated surface 20t of the single crystal member 10 and the light emitting surface 20s parallel to the irradiated surface 20t. The condensing point D is formed. In adjusting the position of the condensing point D in the substrate depth direction, the correction ring 88 of the condensing lens C may be appropriately adjusted in consideration of the thickness and refractive index of the silicon single crystal member (single crystal substrate) 10. This is effective in terms of simple adjustment with a simple configuration.

  Here, the correction ring 88 will be described in some detail. In the laser beam B collected by an objective lens that collects without aberration in the atmosphere, a single crystal formed of a material having a large refractive index, such as silicon, by bending the outer peripheral portion of light with a plano-convex lens, for example. It is possible to collect light inside the member 10. That is, the objective lens 86 is set so that the laser beam B is condensed at a position near the objective lens 86 as it moves from the inner circumference side to the outer circumference side. Such setting can be achieved by setting the correction ring 88 larger than the depth of the processed layer 21 formed at the position of the condensing point D in the objective lens 86 with the correction ring. The substrate depth direction position of the condensing point D can also be adjusted by adjusting the distances from the single crystal member 10 of the main condensing system 85 and the sub condensing system 82 without using the correction ring 88. Is possible.

  As a result of the formation of the processed layer 21, the non-processed layer 22 exists on the opposite side to the irradiation direction of the laser beam B across the processed layer 21. The dimensions, density, and the like of the processed layer 21 to be formed are preferably set in consideration of the material of the single crystal member 10 from the viewpoint of facilitating peeling. Note that the boundary 23 between the processed layer 21 and the non-processed layer 22 is parallel to and perpendicular to the laser beam B so as to cross the processed layer 21 by the laser beam B (that is, perpendicular to the scanning direction AA ′ of the laser beam B). The inner processed layer forming single crystal member 20 is cleaved in a parallel direction), and the cross section can be confirmed by observing with a scanning electron microscope or a confocal microscope after polishing and etching as described above.

  Thus, the internal processing layer formation single crystal member 20 which formed the processing layer 21 can create the new single crystal member divided from the processing layer 21. This is performed by peeling the processed layer 21 and the non-processed layer 22. In this example, first, the processed layer 21 is exposed on the side surface of the internal processed layer forming single crystal member 20. For example, when the non-processed layer 22 is cleaved along a predetermined crystal plane, a structure in which the processed layer 21 is sandwiched by the non-processed layer 22 is obtained. The surface of the non-processed layer 22 is a surface to be irradiated with laser light B 20t. When the processed layer 21 is already exposed, or when the distance between the peripheral edge of the processed layer 21 and the side wall of the internal processed layer forming single crystal member 20 is sufficiently short, the exposure work can be omitted. It is.

  Thereafter, as shown in FIG. 7, the metal substrates 61a and 61b are bonded to the irradiated surface 20t, which is the surface of the non-processed layer 22 of the internal processed layer forming single crystal member 20, with the adhesives 63a and 63b. The crystal member 20 is bonded and fixed so as to sandwich it. As the metal substrates 61a and 61b, for example, SUS plates are used. As the adhesives 63a and 63b, for example, an adhesive made of an acrylic two-component monomer component is used. In this case, when the uncured monomer and the cured reaction product are water-insoluble, it is possible to prevent the peeled surface exposed when peeled in water (for example, the peeled surface of the silicon wafer) from being contaminated. The adhesive strength of the adhesives 63a and 63b only needs to be stronger than the force necessary for the non-processed layer 23 to be separated from the processed layer 22 and peeled off. The size and density of the processed layer 21 to be formed may be adjusted according to the adhesive strength of the adhesives 63a and 63b. The coating thickness of the adhesives 63a and 63b is preferably 0.1 to 1 mm, and more preferably 0.15 to 0.35 mm before curing. When the application thickness of the temporary fixing adhesive is excessively large, a long time is required until complete curing, and the adhesive is liable to cohesive failure at the time of division. Moreover, when application | coating thickness is too small, a long time is required for underwater peeling of the divided | segmented single crystal member.

  If the parallelism between the metal substrate 61a and the metal substrate 61b is not sufficiently obtained when bonded, the necessary parallelism may be obtained using one or more auxiliary plates.

  Further, when the metal substrates 61a and 61b are bonded to the upper and lower surfaces of the internally processed layer-forming single crystal member 20 with the adhesives 63a and 63b, respectively, they may be bonded one by one or may be bonded simultaneously on both surfaces.

  When it is desired to strictly control the coating thickness, it is preferable that the metal substrate is bonded to one side and the adhesive is cured, and then the metal substrate is bonded to the other side. In this way, when bonding one surface at a time, the surface to which the adhesive is applied may be the upper surface or the lower surface of the internally processed layer-forming single crystal member 20. At that time, a resin film may be used as a cover layer in order to prevent the adhesive from adhering to the non-adhesive surface of the internally processed layer forming single crystal member 20 and curing.

  As long as parallelism and flatness can be obtained as the metal substrates 61a and 61b, machining such as punch holes for fixing the apparatus may be performed. Since the metal substrates 61a and 61b to be bonded are subjected to a peeling step in water, it is preferable to form a passive layer for the purpose of suppressing contamination of the silicon wafer, and an oxide layer to be formed for the purpose of shortening the tact time for underwater peeling. A thinner (oxide film layer) is preferable.

  In order to perform underwater peeling from the metal substrates 61a and 61b after dividing and peeling, the metal substrates 61a and 61b before bonding are preferably subjected to a normal metal degreasing treatment. In order to increase the adhesive force between the adhesive and the metal substrate (the adhesive force between the adhesive 63a and the metal substrate 61a and the adhesive force between the adhesive 63b and the metal substrate 61b), a chemical method or mechanical It is preferable to remove the oxide layer on the metal surface by the method to bring out an active metal surface and to make the surface structure easy to obtain the anchor effect. Specific examples of the chemical method include acid cleaning using chemicals and degreasing treatment. Specific examples of the mechanical method include sand blasting and shot blasting, but the method of damaging the surfaces of the metal substrates 61a and 61b with sand paper is the simplest, and the particle size is # 80 to 2000. Preferably, considering the surface damage of the metal substrates 61a and 61b, # 150 to 800 is more preferable.

  After the metal substrates 61a and 61b are bonded, when a force F in a direction away from each other is applied to the metal substrate 61a and the metal substrate 61b, the processed layer 21 and the non-processed layer 22 are separated and separated. At this time, if the laser beam B has a uniform power as described above, a continuous boundary 23 is formed between the processed layer 21 and the non-processed layer 22, so that the processed layer 21 and the non-processed layer are not processed. Peeling from the layer 22 is possible. On the other hand, in the case of a Gaussian beam, cracks and processed layers having different processed states are created in the formed state of the processed layer 21, and it is difficult to form a continuous boundary. As a result, the entire processed layer 21 cannot be peeled off or cleaved along the crystal orientation of the single crystal member, and a new single crystal member cannot be created.

  A method for applying a force to the metal substrates 61a and 61b in order to peel the processed layer 21 is not particularly limited. For example, the side wall of the inner processed layer forming single crystal member 20 may be etched to form a groove in the processed layer 21, and a wedge-shaped press-fitting material (for example, a cutter blade) may be pressed into the groove to generate a force. Alternatively, an upward force component and a downward force component may be generated by applying a force from the angular direction to the inner processed layer forming single crystal member 20. Further, the metal substrates 61a and 61b can be held by a chuck and can be peeled by pulling them up and down at an appropriate speed.

  The single crystal member 10 is not limited to a silicon wafer, but an ingot of a silicon wafer, an ingot of single crystal sapphire, SiC, or a wafer cut out from the ingot, or another crystal (GaN, GaAs, InP) on the surface thereof. Etc.) can be applied. Further, the plane orientation of the single crystal member 10 is not limited to (100), and other plane orientations can be used.

  As described above, in the present embodiment, when the processed layer 21 is formed, the processed layer 21 is formed while simultaneously forming a plurality of condensing points of the laser beam B. Therefore, the formation speed of the processed layer 21 can be significantly increased as compared with the conventional case. Then, instead of a plurality of laser beams, one laser beam is incident on the condensing lens C, and the laser beam B is branched into a plurality of beams by the sub-condensing system 82 of the condensing lens C. This is achieved by making the light incident at 85. Therefore, it is not necessary to provide a plurality of laser oscillators 71, and the apparatus configuration can be simplified.

  Further, the condensing point D is formed on the light emission surface 20s (second surface) side of the intermediate surface 20m (first surface). That is, since the condensing point D is formed in the single crystal member portion farther from the irradiated surface 20t than the intermediate surface 20m, the condensing point D is formed in the single crystal member portion closer to the irradiated surface 20t than the intermediate surface 20m. Compared to the formation, the energy density of the laser beam on the irradiated surface 20t can be reduced. Therefore, even if the high-power laser beam B is irradiated, it is sufficiently easy to avoid that the irradiated surface 20t is processed by the laser beam.

  Further, the sub-condensing system 82 includes a cylindrical lens array 80 and a cylindrical convex lens 85, and the laser light B incident on the sub-condensing system 82 becomes a plurality of branched laser lights and enters the main condensing system 85. Incident. As a result, the laser light emitted from the objective lens 86 of the main condensing system 85 is incident as a branched laser light on the irradiated surface 20t and forms a plurality of condensing points inside the single crystal member 10. Therefore, even if a high-power laser beam B is incident on the sub-collecting system 82, the output is distributed to the branched laser beam, so that the irradiated surface 20t is further prevented from being processed by the laser beam. Can do.

  Further, the main condensing system 85 has a correction ring 88, and the aberration correction of the laser beam B can be corrected. Thereby, the position and shape of the condensing point formed inside the single crystal member 10 can be adjusted by adjusting the correction ring 88 as appropriate, which is effective in terms of simple adjustment with a simple configuration. In addition, by correcting the aberration in this way, the thickness of the processed layer 21 can be suppressed, and a large number of single crystal substrates can be obtained from the single crystal member 10, so that the product rate can be improved.

  Further, in the present embodiment, when forming the processed layer 21, the single crystal member 10 is held so that the scanning direction of the laser beam B is in the direction along the cylindrical lens longitudinal direction U of the cylindrical lens array 80. The XY stage 74 is moved. Thereby, it is not necessary to increase the moving speed of the XY stage 74 so much.

  Since a thin single crystal substrate can be efficiently formed by the present invention, the thinly cut single crystal substrate can be applied to a solar cell as long as it is a Si substrate (silicon substrate), and a GaN-based semiconductor device. If it is a sapphire substrate, etc., it can be applied to light emitting diodes, laser diodes, etc., and if it is SiC, it can be applied to SiC power devices, etc., transparent electronics field, lighting field, hybrid / electric vehicle field, etc. It can be applied in a wide range of fields.

10 Single crystal member 20 Internally processed layer forming single crystal member 20m Intermediate surface 20t Irradiated surface (first surface)
20s Light exit surface (second surface)
21 processed layer 22 non-processed layer 23 boundary 79 cylindrical lens (cylindrical lens, main condensing system)
80 Cylindrical lens array (main condensing system, cylindrical array)
82 Sub focusing system 83 Cylindrical convex lens (Main focusing system)
85 Main condensing system 86 Objective lens (Sub-condensing system)
88 Correction ring (main condensing system)
B Laser light C Condensing lens (laser condensing means, condensing lens)
D Condensing point U Longitudinal direction

Claims (3)

An internal processing layer forming single crystal member formed by forming a processing layer inside the single crystal member by irradiating the laser light from the irradiated surface of the single crystal member via a laser condensing means for condensing the laser light; A method for producing an internally processed layer-forming single crystal member comprising:
The laser condensing means comprises a main condensing system that forms a plurality of condensing points inside the single crystal member, and a sub condensing system that makes laser light incident on the main condensing system,
The main condensing system is provided with an aberration correction function of the single crystal member,
Provided in the sub-collecting system is a cylindrical lens array in which a plurality of cylindrical lenses are integrally or separately arranged in parallel;
As the single crystal member, a member having a first surface to be irradiated with laser light and a second surface parallel to the first surface is used.
While moving the laser condensing means and the single crystal member relatively, the pulsed laser light is passed through the laser condensing means to form a plurality of condensing points inside the single crystal member. A method for producing an internally processed layer-forming single crystal member, comprising forming a processed layer.   The inner working layer forming single crystal member according to claim 1, wherein the condensing point is formed on the second surface side with respect to the intermediate surface which is an intermediate position between the first surface and the second surface. Production method.   3. The method for producing an internally processed layer-forming single crystal member according to claim 2, wherein when moving, the cylindrical lens array is moved along a longitudinal direction of the cylindrical lens.

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