CN101983825A - Picosecond laser scribing device for light emitting diode (LED) wafer - Google Patents
Picosecond laser scribing device for light emitting diode (LED) wafer Download PDFInfo
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- CN101983825A CN101983825A CN2010105011273A CN201010501127A CN101983825A CN 101983825 A CN101983825 A CN 101983825A CN 2010105011273 A CN2010105011273 A CN 2010105011273A CN 201010501127 A CN201010501127 A CN 201010501127A CN 101983825 A CN101983825 A CN 101983825A
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Abstract
The invention relates to a picosecond laser scribing device for a light emitting diode (LED) wafer, comprising an ultraviolet (UV) laser, an optical system, an imaging system and a control system, wherein the laser output by the UV laser strikes to an optical shutter, then vertically enters a beam expander after passing by the optical shutter, enters a wave plate after passing by the beam expander, then strikes to a laser reflector, enter a focusing lens after reflected by the laser reflector, and finally is focused on a processing platform after penetrating through the focusing lens; and the light emitted by the lighting source of the imaging system exits in the form of parallel light after passing by a collimating lens, then enters the focusing lens after being reflected by a lighting reflector, and then irradiates on the upper surface of a workpiece on the processing platform, the light reflected by the upper surface of the workpiece on the processing platform is reflected to the focusing lens and then enters a charge coupled device (CCD) camera through the lighting reflector, and the light is focused on the imaging face of the CCD by the CCD camera. The device can be used for carrying out scribing cutting on a sapphire-based LED wafer, and also can be used for cutting LED wafers taking metal, glass and silicon as bases.
Description
Technical field
The present invention relates to a kind of laser scribing equipment, relate in particular to the high-accuracy processing unit (plant) of picosecond laser of a kind of LED of being used for wafer scribing, belong to the laser accurate technical field of processing equipment.
Background technology
As everyone knows, the blue-ray LED wafer adopts the method growing GaN luminescent layer of vapour deposition often on the process for sapphire-based bottom material, general blue-ray LED wafer size is 2 inches～4 inches at present, needs some inches wafer is cut into the crystal grain of smaller szie before the encapsulation of LED terminal applies.LED method for cutting wafer for sapphire substrates cuts to ultraviolet nanosecond laser line cutting from early stage diamond cutter, has developed ripe volume production equipment.
Development along with the LED industry, the reduction of LED price and the lifting of luminous efficiency have driven led chip popularizing in every profession and trade, especially recently LED makes the blowout of LED production demand in the great market prospect of the extensive use of display backlight and alternative general lighting light source, the double growth of market production capacity demand, thus the production capacity of LED scribing equipment has been proposed new requirement.Under the pressure of the demand of production capacity, the laser scribing equipment that produces at present on the line has substituted the diamond cutter scoring equipment fully.The early stage line efficient of laser scribing means has experienced 3 slices/hour, 5 slices/hour and 7 slices/hour, and 10 of main flow slices/hour up till now, the speed of scribing efficient has become the core competition factor of laser scribing means.
In the scribing improved efficiency, the attention of LED luminous efficiency is also highlighted day by day.The hot melt phenomenon that exists in the process of nanosecond laser scribing has certain influence to the luminous efficiency of LED, also becomes to promote one of keeping in check of LED crystal grain quality.In recent years, the ultrashort pulse laser development is swift and violent, and psec, femto-second laser have been walked out the laboratory.Especially picosecond laser reaches the industrialization rank fully and begins to be applied to field of laser processing.Picosecond laser has ultrashort pulse (one thousandth of nanosecond laser pulses width), the fuel factor that can effectively reduce Reciprocity of Laser ﹠ Materials and produced.And picosecond laser has high repetition frequency, compares the repetition rate about nanosecond laser 200kHz, and picosecond laser can be promoted to 1～2MHz rank.Utilize this characteristic can improve scribing speed greatly.These two characteristics make that effectively promoting the LED luminous efficiency becomes possibility when improving LED scribing efficient.
Summary of the invention
The objective of the invention is to overcome the deficiency that prior art exists, a kind of LED wafer picosecond laser dicing device is provided, be applicable to the sapphire to be the LED wafer cutting of substrate, also be applicable to metal, glass, silicon to be the wafer cutting of substrate simultaneously.
Purpose of the present invention is achieved through the following technical solutions:
LED wafer picosecond laser dicing device, comprise ultraviolet laser, optical system, image system and control system, characteristics are: the output of described ultraviolet laser is provided with optical gate, the output of optical gate is connected with beam expanding lens, the output of beam expanding lens is furnished with wave plate, wave plate is connected laser mirror, and the output of laser mirror connects focus lamp, and focus lamp is right against processing platform; The laser of described ultraviolet laser output incides optical gate, laser impinges perpendicularly on beam expanding lens through optical gate, incide wave plate through the laser behind the beam expanding lens, reenter through the laser behind the wave plate and to be mapped on the laser mirror, laser goes into to inject focus lamp behind laser mirror, the laser that sees through focus lamp focuses on the processing platform;
Described image system comprises illumination light speculum, collimater, CCD camera lens, CCD and lighting source, and the output of lighting source is arranged collimater, and collimater is connected the illumination light speculum, and the output of illumination light speculum is connected mutually with focus lamp; The light that described lighting source sends is parallel light emergence behind collimating mirror, enter focus lamp through the illumination light mirror reflects, be radiated at the upper surface of workpiece on the processing platform, the light reflected back focus lamp of workpiece surface reflection on processing platform, and the transmission illumination light reflection mirror enters the CCD camera lens, by the CCD camera lens it focused on the imaging surface of CCD; Described CCD is electrically connected with control system.
Further, above-mentioned LED wafer picosecond laser dicing device, wherein, the pulse width of described ultraviolet laser output laser is a picosecond (10
-12S).
Further, above-mentioned LED wafer picosecond laser dicing device, wherein, the wavelength of described ultraviolet laser is Ultra-Violet Laser or green laser or near-infrared laser, the wavelength of Ultra-Violet Laser is 355nm or 343nm or 266nm, the wavelength of green laser is 532nm or 515nm, and the wavelength of near-infrared laser is 1030nm or 1064nm.
Again further, above-mentioned LED wafer picosecond laser dicing device, wherein, but described laser mirror is installed on the adjustment rack of two dimension angular adjusting and one dimension translational adjustment.
Again further, above-mentioned LED wafer picosecond laser dicing device, wherein, but described focus lamp is installed on the one dimension linear electric motors of vertical lift.
Substantive distinguishing features and obvious improvement that technical solution of the present invention is outstanding are mainly reflected in:
1. the ultraviolet picosecond laser that sends of laser instrument impinges perpendicularly on through optical system and is positioned over machined material on the processing platform, control system synthesis control laser instrument, motion platform, optics and image system, realization is carried out scribing cutting to sapphire substrates LED wafer, and also can be used for metal, glass, silicon is the LED wafer cutting of substrate;
2. picosecond laser has characteristics such as narrow, the no dust of line of cut width, no hot melt residue, destroyed area are little, scribing speed height, cooperates high-accuracy linear stage of X, Y and high technology ceramics motor rotation platform, reaches efficient, the high-quality cutting effect of LED wafer;
3. the cutting performance of present device surmounts existing main flow nanosecond laser wafer cutting equipment, economic benefit and obvious social benefit.
Description of drawings
Below in conjunction with accompanying drawing technical solution of the present invention is described further:
Fig. 1: light channel structure principle schematic of the present invention.
The implication of each Reference numeral sees the following form among the figure:
The specific embodiment
LED wafer picosecond laser dicing device of the present invention, comprise control system, optical system, image system, ultraviolet laser and processing platform, wherein control system is by the motion of control software control optics, laser instrument and processing platform, and the moving situation of optics, laser instrument and processing platform also feeds back in control system in real time.
As shown in Figure 1, the system light path structure, the output of ultraviolet laser 1 is provided with optical gate 2, the output of optical gate 2 is connected with beam expanding lens 3, the output of beam expanding lens 3 is furnished with wave plate 4, wave plate 4 is connected laser mirror 5, and the output of laser mirror 5 connects focus lamp 6, and focus lamp 6 is right against processing platform 14; The laser of ultraviolet laser 1 output incides optical gate 2, and the effect of this optical gate 2 is the control that is used for the laser break-make, and optical gate stops incident laser when not needing scribing, prevents overflowing of laser; Laser impinges perpendicularly on beam expanding lens 3 through optical gate 2, this beam expanding lens 3 has 8～15 times multiplying power regulatory function, be inversely proportional to for the expansion bundle multiplying power with the optical focusing system beam expanding lens that expands beam function and the waist diameter of focal beam spot as can be known by the first-order theory principle, therefore the Energy distribution of the effective control system focal beam spot of the beam expanding lens of adjustable multiplying power energy; Incide wave plate 4 through beam expanding lens 3 back laser, this wave plate 4 can be modulated laser polarization state; Laser is through inciding behind the wave plate 4 on the laser mirror 5, and laser mirror 5 then highly sees through for ruddiness for the laser elevation reflection of inciding the surface with miter angle, but laser mirror 5 is installed on the adjustment rack of two dimension angular adjusting and one dimension translational adjustment; Laser goes into to inject focus lamp 6 behind laser mirror 5, these focus lamp 6 effects are to converge at the focus place with expanding bundle laser later, its focus is handled opinion and is converged spot diameter＜5um, focus lamp 6 is installed on the one dimension linear electric motors with vertical lift function, by the distance between meticulous adjustment focus lamp 6 and the high technology ceramics motor rotation platform 12, can accurately control the focus of focus lamp 6 and the distance of LED crystal column surface; The laser that sees through focus lamp 6 finally focuses on the surface of LED wafer.
Image system comprises illumination light speculum 7, collimater 8, CCD camera lens 9, CCD10 and lighting source 11, and the output of lighting source 11 is arranged collimater 8, and collimater 8 is connected illumination light speculum 7, and the output of illumination light speculum 7 is connected mutually with focus lamp 6; The required illumination light of image system is a led light source, and the light that lighting source 11 sends has certain dispersion angle, is parallel light emergence behind collimating mirror 8, enters focus lamp 6 through 7 reflections of illumination light speculum and converges at the LED crystal column surface; 7 pairs of optical wavelength that led light source sends of illumination light speculum have certain reflection and transmission ratio, and its ratio is 1: 1; Illumination light line focus mirror 6 converges at the LED crystal column surface, the LED crystal column surface is illuminated, and carry surface information reflected back focus lamp 6, transmission illumination light reflection mirror 7, enter CCD camera lens 9, it is focused on the CCD10 imaging surface, be converted into the signal of telecommunication by CCD10 and be transferred to control system by CCD camera lens 9.Control system comprises motion control card and driver, by the grating chi angulation position precise closed-loop control of motor internal.
Actually add man-hour, the LED wafer is positioned on the high technology ceramics motor rotation platform 12, utilizes coaxial image system in conjunction with control system the LED particle to be carried out accurate horizontal alignment and contraposition.Utilization has the one dimension linear electric motors of vertical lift function with focus lamp 6 up-down adjustment, makes its focus be positioned at the LED crystal column surface.After control system calculates score path, start X-axis processing platform 13 and 14 pairs of LED wafers of Y-axis processing platform and carry out the cutting of X, Y both direction.
The pulse width of ultraviolet laser 1 output laser is a picosecond (10
-12S), its size is less than 15 psecs.The wavelength of ultraviolet laser 1 is Ultra-Violet Laser or green laser or near-infrared laser, and the wavelength of Ultra-Violet Laser is 355nm or 343nm or 266nm, and the wavelength of green laser is 532nm or 515nm, and the wavelength of near-infrared laser is 1030nm or 1064nm.Its pulse recurrence frequency is adjustable, and its highest frequency is 1MHz.
In sum, LED wafer scribing equipment of the present invention, the ultraviolet picosecond laser that laser instrument sends impinges perpendicularly on through optical system and is positioned over machined material on the processing platform, control system synthesis control laser instrument, motion platform, optics and image system, realization is carried out the scribing cutting to sapphire substrates LED wafer, also is applicable to that metal, glass, silicon are the LED wafer cutting of substrate simultaneously.
What need understand is: the above only is a preferred implementation of the present invention; for those skilled in the art; under the prerequisite that does not break away from the principle of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (5)
1.LED wafer picosecond laser dicing device, comprise ultraviolet laser (1), optical system, image system and control system, it is characterized in that: the output of described ultraviolet laser (1) is provided with optical gate (2), the output of optical gate (2) is connected with beam expanding lens (3), the output of beam expanding lens (3) is furnished with wave plate (4), wave plate (4) is connected laser mirror (5), and the output of laser mirror (5) connects focus lamp (6), and focus lamp (6) is right against processing platform (14); The laser of described ultraviolet laser (1) output incides optical gate (2), laser impinges perpendicularly on beam expanding lens (3) through optical gate (2), incide wave plate (4) through the laser behind the beam expanding lens (3), reenter through the laser behind the wave plate (4) and to be mapped on the laser mirror (5), laser goes into to inject focus lamp (6) behind laser mirror (5), the laser that sees through focus lamp (6) focuses on the processing platform;
Described image system comprises illumination light speculum (7), collimater (8), CCD camera lens (9), CCD (10) and lighting source (11), the output of lighting source (11) is arranged collimater (8), collimater (8) is connected illumination light speculum (7), and the output of illumination light speculum (7) is connected mutually with focus lamp (6); The light that described lighting source (11) sends is parallel light emergence behind collimating mirror (8), enter focus lamp (6) through illumination light speculum (7) reflection, be radiated at the upper surface of workpiece on the processing platform, the light reflected back focus lamp (6) of workpiece surface reflection on processing platform, and transmission illumination light reflection mirror (7) enters CCD camera lens (9), by CCD camera lens (9) it focused on the imaging surface of CCD (10); Described CCD (10) is electrically connected with control system.
2. LED wafer picosecond laser dicing device according to claim 1 is characterized in that: the pulse width of described ultraviolet laser (1) output laser is a picosecond.
3. LED wafer picosecond laser dicing device according to claim 1, it is characterized in that: the wavelength of described ultraviolet laser (1) is Ultra-Violet Laser or green laser or near-infrared laser, the wavelength of Ultra-Violet Laser is 355nm or 343nm or 266nm, the wavelength of green laser is 532nm or 515nm, and the wavelength of near-infrared laser is 1030nm or 1064nm.
4. LED wafer picosecond laser dicing device according to claim 1 is characterized in that: described laser mirror (5) but be installed in that two dimension angular is regulated and the adjustment rack of one dimension translational adjustment on.
5. LED wafer picosecond laser dicing device according to claim 1 is characterized in that: described focus lamp (6) but be installed on the one dimension linear electric motors of vertical lift.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105011273A CN101983825A (en) | 2010-10-09 | 2010-10-09 | Picosecond laser scribing device for light emitting diode (LED) wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105011273A CN101983825A (en) | 2010-10-09 | 2010-10-09 | Picosecond laser scribing device for light emitting diode (LED) wafer |
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|---|---|
| CN101983825A true CN101983825A (en) | 2011-03-09 |
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| CN2010105011273A Pending CN101983825A (en) | 2010-10-09 | 2010-10-09 | Picosecond laser scribing device for light emitting diode (LED) wafer |
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| CN102248305A (en) * | 2011-04-02 | 2011-11-23 | 周明 | Equipment and process method for high speed precision laser drilling on crystalline silicon |
| CN102581495A (en) * | 2012-02-14 | 2012-07-18 | 中国科学院福建物质结构研究所 | Double CCD (Charge-coupled device) imaging system applied to laser cutting |
| CN102738313A (en) * | 2011-04-01 | 2012-10-17 | 山东华光光电子有限公司 | Chip cutting method for increasing LED chip light extraction |
| CN102886608A (en) * | 2011-07-20 | 2013-01-23 | 三星钻石工业股份有限公司 | Laser scribing device |
| CN102886609A (en) * | 2012-08-27 | 2013-01-23 | 中国科学院半导体研究所 | Multi-focus femtosecond laser scribing method applied to separation of light emitting diode (LED) device |
| CN103567642A (en) * | 2012-08-08 | 2014-02-12 | 鸿富锦精密工业（深圳）有限公司 | Sapphire cutting device |
| CN103801823A (en) * | 2014-02-14 | 2014-05-21 | 中国电子科技集团公司第四十五研究所 | Wafer alignment positioning device and method |
| CN103962727A (en) * | 2013-01-28 | 2014-08-06 | 鸿富锦精密工业（深圳）有限公司 | Sapphire cutting device |
| CN104191086A (en) * | 2014-08-18 | 2014-12-10 | 北京京东方专用显示科技有限公司 | Light ray machining device |
| CN104701258A (en) * | 2013-12-05 | 2015-06-10 | 上海蓝光科技有限公司 | Device and method for increasing perimeter of LED chip |
| CN106735917A (en) * | 2016-12-05 | 2017-05-31 | 广东富源科技股份有限公司 | A kind of method that high-rate laser etches sapphire eyeglass |
| CN107824968A (en) * | 2017-11-08 | 2018-03-23 | 深圳泰德激光科技有限公司 | Laser welding device with CCD vision positioning function |
| CN107971645A (en) * | 2017-12-29 | 2018-05-01 | 苏州德龙激光股份有限公司 | Quaternary LED wafer is exempted to coat laser surface cutter device and its method |
| CN108746998A (en) * | 2018-07-20 | 2018-11-06 | 苏州迅镭激光科技有限公司 | A kind of laser welding camera anti-flicker apparatus and its anti-flickering method |
| CN109366015A (en) * | 2018-12-24 | 2019-02-22 | 武汉华工激光工程有限责任公司 | With the interior cutter device coaxially positioned |
| CN110977188A (en) * | 2019-11-03 | 2020-04-10 | 武汉光谷航天三江激光产业技术研究有限公司 | Multi-focus wafer internal cutting device based on spatial light modulator |
| CN111380874A (en) * | 2018-12-28 | 2020-07-07 | 上海微电子装备（集团）股份有限公司 | Defect detection device, bonding apparatus, and bonding method |
| CN111421249A (en) * | 2020-05-09 | 2020-07-17 | 沈阳仪表科学研究院有限公司 | Coaxial visual laser output device for processing warped wafer |
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| CN102738313A (en) * | 2011-04-01 | 2012-10-17 | 山东华光光电子有限公司 | Chip cutting method for increasing LED chip light extraction |
| CN102248305A (en) * | 2011-04-02 | 2011-11-23 | 周明 | Equipment and process method for high speed precision laser drilling on crystalline silicon |
| CN102886608B (en) * | 2011-07-20 | 2015-07-08 | 三星钻石工业股份有限公司 | Laser scribing device |
| CN102886608A (en) * | 2011-07-20 | 2013-01-23 | 三星钻石工业股份有限公司 | Laser scribing device |
| CN102581495A (en) * | 2012-02-14 | 2012-07-18 | 中国科学院福建物质结构研究所 | Double CCD (Charge-coupled device) imaging system applied to laser cutting |
| CN102581495B (en) * | 2012-02-14 | 2016-06-15 | 中国科学院福建物质结构研究所 | A kind of double; two CCD imaging systems being applied to cut |
| CN103567642A (en) * | 2012-08-08 | 2014-02-12 | 鸿富锦精密工业（深圳）有限公司 | Sapphire cutting device |
| CN102886609A (en) * | 2012-08-27 | 2013-01-23 | 中国科学院半导体研究所 | Multi-focus femtosecond laser scribing method applied to separation of light emitting diode (LED) device |
| CN103962727A (en) * | 2013-01-28 | 2014-08-06 | 鸿富锦精密工业（深圳）有限公司 | Sapphire cutting device |
| CN103962727B (en) * | 2013-01-28 | 2018-03-02 | 深圳市裕展精密科技有限公司 | Sapphire cutter device |
| CN104701258A (en) * | 2013-12-05 | 2015-06-10 | 上海蓝光科技有限公司 | Device and method for increasing perimeter of LED chip |
| CN104701258B (en) * | 2013-12-05 | 2018-03-02 | 上海蓝光科技有限公司 | A kind of device and method for increasing LED chip girth |
| CN103801823A (en) * | 2014-02-14 | 2014-05-21 | 中国电子科技集团公司第四十五研究所 | Wafer alignment positioning device and method |
| CN103801823B (en) * | 2014-02-14 | 2017-01-18 | 中国电子科技集团公司第四十五研究所 | Wafer alignment positioning device and method |
| CN104191086B (en) * | 2014-08-18 | 2016-08-24 | 北京京东方专用显示科技有限公司 | Light wire processing device |
| CN104191086A (en) * | 2014-08-18 | 2014-12-10 | 北京京东方专用显示科技有限公司 | Light ray machining device |
| CN106735917A (en) * | 2016-12-05 | 2017-05-31 | 广东富源科技股份有限公司 | A kind of method that high-rate laser etches sapphire eyeglass |
| CN107824968A (en) * | 2017-11-08 | 2018-03-23 | 深圳泰德激光科技有限公司 | Laser welding device with CCD vision positioning function |
| CN107971645A (en) * | 2017-12-29 | 2018-05-01 | 苏州德龙激光股份有限公司 | Quaternary LED wafer is exempted to coat laser surface cutter device and its method |
| CN108746998A (en) * | 2018-07-20 | 2018-11-06 | 苏州迅镭激光科技有限公司 | A kind of laser welding camera anti-flicker apparatus and its anti-flickering method |
| CN109366015A (en) * | 2018-12-24 | 2019-02-22 | 武汉华工激光工程有限责任公司 | With the interior cutter device coaxially positioned |
| CN111380874A (en) * | 2018-12-28 | 2020-07-07 | 上海微电子装备（集团）股份有限公司 | Defect detection device, bonding apparatus, and bonding method |
| CN110977188A (en) * | 2019-11-03 | 2020-04-10 | 武汉光谷航天三江激光产业技术研究有限公司 | Multi-focus wafer internal cutting device based on spatial light modulator |
| CN111421249A (en) * | 2020-05-09 | 2020-07-17 | 沈阳仪表科学研究院有限公司 | Coaxial visual laser output device for processing warped wafer |
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