CN107971645A - Quaternary LED wafer is exempted to coat laser surface cutter device and its method - Google Patents
Quaternary LED wafer is exempted to coat laser surface cutter device and its method Download PDFInfo
- Publication number
- CN107971645A CN107971645A CN201711471009.0A CN201711471009A CN107971645A CN 107971645 A CN107971645 A CN 107971645A CN 201711471009 A CN201711471009 A CN 201711471009A CN 107971645 A CN107971645 A CN 107971645A
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- China
- Prior art keywords
- laser
- led wafer
- quaternary led
- exempted
- speculum
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
- B23K26/142—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor for the removal of by-products
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
Abstract
Exempt to coat laser surface cutter device and method the present invention relates to quaternary LED wafer, the first speculum is arranged in the lens combination light path output of picosecond laser, beam expanding lens has been sequentially arranged on first speculum reflected light path, first polarization wave plate, polarization spectro piece, second speculum, second polarization wave plate, 3rd speculum and laser cutting head, laser cutting head includes one-dimensional laser beam beam splitting element and laser condensing lens, the top of laser condensing lens one-dimensional laser beam beam splitting element is installed by position rotation regulating mechanism, light splitting light-beam position can be adjusted by adjusting position rotation regulating mechanism, the lens combination light path output of laser condensing lens is right against the surface of the quaternary LED wafer product on platform to be processed.Coating protection liquid process can be saved when cutting quaternary LED wafer, effectively lifts cutting efficiency；Picosecond laser cutting crystal wafer produces more small-scale heat affected area, and micro-crack, remelting recrystallization can be improved.
Description
Technical field
Exempt to coat laser surface cutter device and its method the present invention relates to a kind of quaternary LED wafer.
Background technology
At present, at home most LED chip manufactory expand production on a large scale blue green light market background under, the reddish yellow of high brightness
Light LED chip is still irreplaceable in current market position, and on the rise year by year.Quaternary (AlInGaP) chip is
The high brightness reddish yellow optical chip of mainstream at present, optimal technique are laser cutting and break bar cutting.Current laser cutting parameter
It is broadly divided into four steps, i.e. patch, the coating of protection liquid, laser slotting, cleaning.Its processing process is specifically as shown in Figure 1：
Step is 1.：Manipulator feeding from magazine；
Step is 2.：Manipulator moves to coating/cleaning platform gluing by be processed；
Step 3.~4.：After the completion of gluing, manipulator moves on to be processed on processing stations；
Step 5.~6.：After the completion of Laser Processing, manipulator moves to coating/cleaning platform by machined, is cleaned
It is and dry；
Step 7.~8.：After the completion of cleaning-drying, send chip back to magazine, complete a fabrication cycles.
Wherein, protect liquid coating procedure include step 2., 3. manufacturing process, when substantially increasing the beat of laser cutting
Between, consumables cost and Design of Mechanical Structure cost etc..
The content of the invention
The purpose of the present invention is overcome the shortcomings of the prior art, there is provided a kind of quaternary LED wafer is exempted to coat laser table
Face cutter device and its method, can save coating protection liquid process, so as to effectively lift cutting efficiency.
The purpose of the present invention is achieved through the following technical solutions：
Quaternary LED wafer is exempted to coat laser surface cutter device, and feature is：The lens combination light path output arrangement the of picosecond laser
One speculum, beam expanding lens, the first polarization wave plate, polarization spectro piece, second anti-has been sequentially arranged on the first speculum reflected light path
Penetrate mirror, the second polarization wave plate, the 3rd speculum and laser cutting head, the laser cutting head and include one-dimensional laser beam beam splitting
One-dimensional laser beam beam splitting member is installed in element and laser condensing lens, the top of laser condensing lens by position rotation regulating mechanism
Part, can adjust light splitting light-beam position, the lens combination light path output of laser condensing lens, which is right against, to be treated by adjusting position rotation regulating mechanism
The surface of quaternary LED wafer product on processing platform.
Further, above-mentioned quaternary LED wafer is exempted to coat laser surface cutter device, wherein, first polarized wave
Piece is 1/2 λ wave plates.
Further, above-mentioned quaternary LED wafer is exempted to coat laser surface cutter device, wherein, second polarized wave
Piece is 1/2 λ wave plates.
Further, above-mentioned quaternary LED wafer is exempted to coat laser surface cutter device, wherein, the beam expanding lens and skin
The second distance of laser exit is 20cm~50cm.
Further, above-mentioned quaternary LED wafer is exempted to coat laser surface cutter device, wherein, the laser condensing lens
Lower section is equipped with getter device.
Quaternary LED wafer of the present invention is exempted to coat laser surface cutting method, and picosecond laser launches laser, passes through first
Light beam reflection is incided beam expanding lens by speculum, and beam expanding lens is collimated and expanded to laser, is improved the collimation of laser, is made hair
The beam diameter increase penetrated；The first polarization wave plate and polarization spectro piece are again incident on, by rotatory polarization wave plate angle to laser
Power is decayed；The second polarization wave plate is incided through the second speculum again, passes through rotatory polarization wave plate angular adjustment laser light
Beam polarization state；Laser cutting head is incided through the 3rd speculum, the one-dimensional laser beam beam splitting element pair in laser cutting head again
Laser beam is divided, and light splitting light-beam position can be adjusted by adjusting position rotation regulating mechanism, realizes that multiple beam continuously adds
Work, the multiple beam after light splitting enter laser condensing lens, and laser condensing lens make light beam focus on quaternary LED wafer to be processed
The surface of product, is processed with moment melted material.
Further, above-mentioned quaternary LED wafer is exempted to coat laser surface cutting method, wherein, the picosecond laser
Device launches the laser of 1064 or 532nm wave bands.
Further, above-mentioned quaternary LED wafer exempt from coat laser surface cutting method, wherein, the beam expanding lens with
The distance of picosecond laser outlet is 20cm~50cm.
Further, above-mentioned quaternary LED wafer is exempted to coat laser surface cutting method, wherein, led to by getter device
Negative pressure is crossed all to siphon away the slag formed after laser high-temperature fusion gasification quaternary LED wafer from suction hole.
Further, above-mentioned quaternary LED wafer is exempted to coat laser surface cutting method, wherein, the getter device
The negative pressure of interface is 0.5MPa~1MPa.
The present invention has significant advantages and beneficial effects compared with prior art, embodies in the following areas：
1. forming laser processing device using picosecond laser, coating protection liquid can be saved when cutting quaternary LED wafer
Process, exempts from quaternary LED wafer to coat laser surface cutting processing, so as to effectively lift cutting efficiency；
2. picosecond laser cutting crystal wafer produces more small-scale heat affected area, micro-crack, remelting recrystallization can be changed
It is kind；At MW grades, processing produces nano level cutting dust and is easier to collect after being gasified the peak power of picosecond laser；Picosecond plus
Work generates ionic product, and the hardened knurl of not remelting, does not generate complex compound, easily cleans hand by exhausting, air blowing, washing etc.
Section is collected processing；
3. the beam expanding lens of light path system is 20cm~50cm apart from the distance that picosecond laser exports, different installation sites
Different laser focal beam spot effects is had, laser beam can obtain good laser facula by collimator and extender and after focusing on
Quality, rational design is so that scribing of the laser to quaternary LED wafer obtains excellent results；
4. the opposite of light splitting light beam spot can be adjusted by adjusting knob by the light beam of one-dimensional laser beam beam splitting element
Position, regulate relative position can be so that form after scribing after multi beam low power laser high-temperature fusion gasification quaternary LED wafer
Slag all siphoned away by getter device, form the Cutting Road of scribing without Hui Rong, scribing sliver section smooth in appearance is without nigrescence
Phenomenon.
Brief description of the drawings
Fig. 1：The processing process schematic diagram of background technology；
Fig. 2：The processing process schematic diagram of the present invention；
Fig. 3：The structure diagram of apparatus of the present invention.
Embodiment
In order to which the technical features, objects and effects of the present invention are more clearly understood, specific implementation is now described in detail
Scheme.
As shown in figure 3, quaternary LED wafer is exempted to coat laser surface cutter device, in the lens combination light path output of picosecond laser 1
Arrange the first speculum 2, beam expanding lens 3, first has been sequentially arranged on 2 reflected light path of the first speculum and has polarized wave plate 4, polarization spectro
Piece 5, the second speculum 6, second polarization wave plate 7, the 3rd speculum 8 and laser cutting head, laser cutting head include one-dimensional sharp
Light beam splitter element 9 and laser condensing lens 10, the top of laser condensing lens 10 are one-dimensional by the installation of position rotation regulating mechanism
Laser beam beam splitting element 9, can adjust light splitting light-beam position, the light of laser condensing lens 10 by adjusting position rotation regulating mechanism
Road output terminal is right against the surface of the quaternary LED wafer product on platform 12 to be processed.
Wherein, the first polarization wave plate 4 is 1/2 λ wave plates, and the second polarization wave plate 7 is 1/2 λ wave plates.Beam expanding lens 3 with picosecond swash
The distance of light device outlet is 20cm~50cm.
The lower section of laser condensing lens 10 is equipped with getter device 11.
Above device be used for quaternary LED wafer exempt from coat laser surface cutting when, picosecond laser 1 launch 1064 or
The laser of 532nm wave bands, incides beam expanding lens 3, beam expanding lens 3 goes out with picosecond laser by the first speculum 2 by light beam reflection
The distance of mouth is 20cm~50cm, and beam expanding lens 3 is collimated and expanded to laser, improves the collimation of laser, makes the light of transmitting
Beam diameter increases；The first polarization wave plate 4 and polarization spectro piece 5 are again incident on, by rotatory polarization wave plate angle to laser power
Decay；The second polarization wave plate 7 is incided through the second speculum 6 again, passes through rotatory polarization wave plate angular adjustment laser beam
Polarization state；Laser cutting head is incided through the 3rd speculum 8, the one-dimensional laser beam beam splitting element 9 in laser cutting head is right again
Laser beam is divided, and light splitting light-beam position can be adjusted by adjusting position rotation regulating mechanism, realizes that multiple beam continuously adds
Work, the multiple beam after light splitting enter laser condensing lens 10, and laser condensing lens 10 make light beam focus on quaternary LED to be processed
The surface of product wafer, is processed with moment melted material.Getter device 11 by laser high-temperature fusion gasify quaternary LED wafer
The slag formed after material is all siphoned away from suction hole, and the negative pressure of 11 interface of getter device is 0.5MPa~1MPa.
The present invention can save coating protection liquid process, so as to effectively carry using picosecond laser cutting quaternary LED wafer
Rise cutting efficiency.
When exempting to coat laser surface cutting to quaternary LED wafer, as shown in Fig. 2, processing process step is：
Step is 1.：Manipulator feeding from magazine；
Step is 2.：Manipulator moves to be processed on processing stations；
Step 3.~4.：After the completion of Laser Processing, manipulator moves to coating/cleaning platform by machined, is cleaned
It is and dry；
Step 5.~6.：After the completion of cleaning-drying, send chip back to magazine, complete a fabrication cycles.
The cutting process of picosecond laser releases energy within the picosecond time, for decomposing material, the remote super various materials of energy
Material absorbs threshold value, and heat affected area can reduce, and micro-crack, remelting recrystallization can be improved；Picosecond cutting narrow spaces obtain
The peak power of bigger is obtained, the dust particles of smaller with direct gasification material, can be produced；In addition the ionic production of generation is processed
Thing, it is not easy to remelting, hardened, knurl or generation complex compound, by blowing plus the cleaning means of exhausting and washing can be with
Dust is collected and is handled.
The beam expanding lens of light path system is 20cm~50cm apart from the distance that picosecond laser exports.Laser beam expanding lens installation position
It is equipped with exquisite, different installation site and has different laser focal beam spot effects.Beam expanding lens is to realize to launch laser
Laser is collimated and expanded, and collimation is the collimation of secondary improvement laser, and it is to add the beam diameter of laser transmitting to expand
Greatly, laser beam can obtain good laser facula quality, above-mentioned rational design ability by collimator and extender and after focusing on
Obtain scribing of the laser to quaternary LED wafer and obtain excellent results.
One-dimensional laser beam beam splitting element 9, the installation of the one-dimensional lower section of laser beam beam splitting element 9 are installed in laser cutting head
Laser condensing lens 10, substantial amounts of dust can be produced in quaternary LED wafer scribing processes, especially for virose material,
Continuous batch produces and processes, and the dust of processing quaternary LED wafer can easily pollute laser condensing lens 10, and getter device 11 is to focusing on
Eyeglass plays a protective role, and extends the service life of focusing lens, reduces processing cost.
The opposite position of light splitting light beam spot can be adjusted by adjusting knob by the light beam of one-dimensional laser beam beam splitting element 9
Put.Especially for scribing hemisection processing technology, scribing is that laser action is straight to formation above quaternary LED wafer Cutting Road one
Line, 7 μm~20 μm of line width, hole multiple beam can influence the effect of scribing in quaternary LED wafer relative position after laser focusing, adjust
Having saved relative position can be so that the slag formed after scribing after multi beam low power laser high-temperature fusion gasification quaternary LED wafer leads to
Cross getter device all to siphon away, form the Cutting Road of scribing without Hui Rong, scribing sliver section smooth in appearance is without nigrescence phenomenon.If
Adjust inappropriate, scribing Cutting Road appearance be easy to cause Hui Rong, and depth of cut is not enough and Cutting Road both sides black and influence processing
Quality.
In conclusion picosecond laser processing quaternary LED wafer of the present invention, compared with nanosecond ultraviolet cutting, picosecond laser is cut
Cut wafer and produce more small-scale heat affected area, micro-crack, remelting recrystallization can be improved.
At MW grades, processing produces nano level cutting dust and is easier to collect after being gasified the peak power of picosecond laser.
Picosecond processing generation ionic product, the hardened knurl of not remelting, does not generate complex compound, easily by exhausting, blows
Gas and water the cleaning means such as washes and is collected processing；Work flow can be effectively shortened using this method, save pitch time and
Consumables cost.
It should be noted that：The foregoing is merely the preferred embodiment of the present invention, is not limited to power of the invention
Sharp scope；At the same time more than description, should can understand and implement for the special personage of correlative technology field, thus it is other without departing from
The equivalent change or modification completed under disclosed spirit, should be included in claim.
Claims (10)
1. quaternary LED wafer is exempted to coat laser surface cutter device, it is characterised in that：The lens combination light path output of picosecond laser (1)
Arrange the first speculum (2), be sequentially arranged on the first speculum (2) reflected light path beam expanding lens (3), first polarization wave plate (4),
Polarization spectro piece (5), the second speculum (6), the second polarization wave plate (7), the 3rd speculum (8) and laser cutting head, it is described
Laser cutting head includes one-dimensional laser beam beam splitting element (9) and laser condensing lens (10), and the top of laser condensing lens (10) leads to
Cross position rotation regulating mechanism and one-dimensional laser beam beam splitting element (9) is installed, can be adjusted by adjusting position rotation regulating mechanism
Light-beam position is divided, the lens combination light path output of laser condensing lens (10) is right against the quaternary LED wafer production on platform to be processed (12)
The surface of product.
2. quaternary LED wafer according to claim 1 is exempted to coat laser surface cutter device, it is characterised in that：Described
One polarization wave plate (4) is 1/2 λ wave plates.
3. quaternary LED wafer according to claim 1 is exempted to coat laser surface cutter device, it is characterised in that：Described
Two polarization wave plates (7) are 1/2 λ wave plates.
4. quaternary LED wafer according to claim 1 is exempted to coat laser surface cutter device, it is characterised in that：The expansion
Shu Jing (3) and the distance of picosecond laser outlet are 20cm~50cm.
5. quaternary LED wafer according to claim 1 is exempted to coat laser surface cutter device, it is characterised in that：It is described to swash
Getter device (11) is equipped with below light focus lamp (10).
6. the device described in claim 1 realizes that quaternary LED wafer is exempted to coat laser surface cutting method, it is characterised in that：Skin
Second laser (1) launches laser, light beam reflection is incided beam expanding lens (3) by the first speculum (2), beam expanding lens (3) is right
Laser is collimated and expanded, and improves the collimation of laser, increases the beam diameter of transmitting；It is again incident on the first polarization wave plate
(4) and polarization spectro piece (5), decayed by rotatory polarization wave plate angle to laser power；Enter again through the second speculum (6)
The second polarization wave plate (7) is mapped to, passes through rotatory polarization wave plate angular adjustment laser beam polarization state；Again through the 3rd speculum (8)
Incide laser cutting head, the one-dimensional laser beam beam splitting element (9) in laser cutting head is divided laser beam, can lead to
Position rotation regulating mechanism adjustment light splitting light-beam position is overregulated, realizes multiple beam Continuous maching, the multiple beam after light splitting enters
Laser condensing lens (10), laser condensing lens (10) make light beam focus on the surface of quaternary LED wafer product to be processed, with
Moment melted material is processed.
7. quaternary LED wafer according to claim 6 is exempted to coat laser surface cutting method, it is characterised in that：The skin
Second laser (1) launches the laser of 1064 or 532nm wave bands.
8. quaternary LED wafer according to claim 6 is exempted to coat laser surface cutting method, it is characterised in that：The expansion
Shu Jing (3) and the distance of picosecond laser outlet are 20cm~50cm.
9. quaternary LED wafer according to claim 6 is exempted to coat laser surface cutting method, it is characterised in that：By air-breathing
Device (11) is all siphoned away the slag formed after laser high-temperature fusion gasification quaternary LED wafer from suction hole by negative pressure.
10. quaternary LED wafer according to claim 9 is exempted to coat laser surface cutting method, it is characterised in that：The suction
The negative pressure of device of air (11) interface is 0.5MPa~1MPa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711471009.0A CN107971645A (en) | 2017-12-29 | 2017-12-29 | Quaternary LED wafer is exempted to coat laser surface cutter device and its method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711471009.0A CN107971645A (en) | 2017-12-29 | 2017-12-29 | Quaternary LED wafer is exempted to coat laser surface cutter device and its method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107971645A true CN107971645A (en) | 2018-05-01 |
Family
ID=62005498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711471009.0A Pending CN107971645A (en) | 2017-12-29 | 2017-12-29 | Quaternary LED wafer is exempted to coat laser surface cutter device and its method |
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| CN (1) | CN107971645A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109483068A (en) * | 2018-12-10 | 2019-03-19 | 大族激光科技产业集团股份有限公司 | The laser cutting device and its cutting method of semiconductor alloy substrate |
| CN110091075A (en) * | 2019-05-31 | 2019-08-06 | 大族激光科技产业集团股份有限公司 | Wafer grooving method and device |
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| US4380694A (en) * | 1980-02-26 | 1983-04-19 | Ferranti Limited | Laser cutting apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109483068A (en) * | 2018-12-10 | 2019-03-19 | 大族激光科技产业集团股份有限公司 | The laser cutting device and its cutting method of semiconductor alloy substrate |
| CN110091075A (en) * | 2019-05-31 | 2019-08-06 | 大族激光科技产业集团股份有限公司 | Wafer grooving method and device |
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