CN101670492A - Designing method for LED wafer tri-laser-beam scribing equipment - Google Patents
Designing method for LED wafer tri-laser-beam scribing equipment Download PDFInfo
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Abstract
The invention relates to a designing method for LED wafer tri-laser-beam scribing equipment, in which the output end of a laser is provided with a light gate, the output end of the light gate is connected with a beam expander, a first total reflecting mirror is arranged at the output end of the beam expander, the output end of the first total reflecting mirror is linked with a laser beam splittingsystem used for splitting a single-beam laser source into tri-laser-beams, the output end of the laser beam splitting system is provided with a second total reflecting mirror which is linked with a focusing mirror, and the focusing mirror in right face of a processing platform; laser light coming out of the laser is emitted to the beam expander via the light gate, the laser light passing throughthe beam expander is emitted to the first total reflecting mirror, the laser light passing through the first total reflecting mirror is emitted to the laser beam splitting system, the laser beam splitting system outputs triple laser beams with equivalent dimension and energy, the triple laser beams are emitted to the second total reflecting mirror, are emitted to the focusing mirror after the angle is intersected by the second total reflecting mirror, and are parallel focused on the processing platform after permeating through the focusing mirror. The equipment realizes parallel scribing on the LED wafer tri-laser-beam and can be widely used for cutting LED wafers.
Description
Technical field
The present invention relates to laser process equipment, relate in particular to the method for designing of the high-accuracy process equipment of Ultra-Violet Laser of a kind of LED of being used for wafer scribing, belong to the laser accurate technical field of processing equipment.
Background technology
As everyone knows, the blue-ray LED wafer adopts the method growing GaN luminescent layer of vapour deposition often on the process for sapphire-based bottom material, general blue-ray LED wafer size is 2 inches at present, needs some inches wafer is cut into the crystal grain of smaller szie before the encapsulation of LED terminal applies.LED wafer cutting for sapphire substrate has substituted previous diamond cutter by the Ultra-Violet Laser scribing at present fully, and by the importing of laser new technology, the scribing time of typical 12mil * 12mil crystallite dimension is about 8 minutes.
Development along with the LED industry, the reduction of LED price and the lifting of luminous efficiency, driven led chip popularizing in every profession and trade, especially recently LED makes the blowout of LED production demand in the extensive use of display backlight, production capacity demand double growth in market can be predicted the interior LED of the five-year will cause tens of times of LED production capacity demands in the application popularization of illuminating industry lifting.
For the rapid growth trend of LED industry, the performance of LED production process equipment has also proposed new requirement, the laser scribing equipment of one of key equipment of producing as LED, and the requirement of its production efficiency is particularly urgent.Certainly the common practice that promotes production efficiency is to promote scribing speed, in fact the laser scribing means that is applied to the LED wafer has also experienced under under the early stage 10mm/s speed 3 slices/hour, mid-term 20mm/s speed 5 slices/hour, 8 slices/hour under the 70mm/s speed now, and the scribing speed simple as can be seen from the escalation process of laser scribing means increases more and more littler for the room for promotion of scribing efficient.Adopt the technical scheme of multi-beam parallel scribing in view of this puzzlement and can break through scribing improved efficiency bottleneck, realize scribing improved efficiency at double.
It is the new application technology that grew up in recent years that Laser Processing is applied to the scribing of LED wafer, at present external existing relevant application apparatus, and the Disco of the New Wave of the U.S., Laser Solution and Japan for example, but mainly be the single beam laser scribing.
In recent years, along with the development of Ultra-Violet Laser light source, the especially commercialization of semiconductor end pump ultraviolet laser above power of 5W under the 100kHz operating frequency makes the parallel scribing of single light source multiple beam beam split become possibility.
Summary of the invention
The objective of the invention is to overcome the deficiency that prior art exists, a kind of method for designing of LED wafer tri-laser-beam scribing equipment is provided.
Purpose of the present invention is achieved through the following technical solutions:
The method for designing of LED wafer tri-laser-beam scribing equipment, comprise laser instrument, processing platform and control system, characteristics are: the output of described laser instrument is provided with the optical gate that is used to control the laser break-make, the output of described optical gate is connected with and is used for the beam expanding lens that laser facula expands the adjusting of bundle multiplying power, the output of described beam expanding lens is furnished with first total reflective mirror, the linking of the first total reflective mirror output is useful on the laser beam splitting system that the single beam laser source is divided into three beams of laser, the output of described laser beam splitting system is provided with second total reflective mirror, described second total reflective mirror is connected focus lamp, and described focus lamp is right against processing platform; The laser of described laser emitting incides optical gate, laser impinges perpendicularly on beam expanding lens through optical gate, incide first total reflective mirror through the laser behind the beam expanding lens, incide the laser beam splitting system through the laser behind first total reflective mirror, the laser of the equal energy of laser beam splitting system output three beams equidimension, the three beams of laser of the equal energy of equidimension incides second total reflective mirror, three beams parallel laser behind the second total reflective mirror corner incides focus lamp, see through parallel the focusing on the processing platform of three beams of laser of focus lamp, three-beam on the processing platform surface is located along the same line, and middle beam of laser equates with the center distance of both sides laser.
Further, the method for designing of above-mentioned LED wafer tri-laser-beam scribing equipment, wherein, the output of described beam expanding lens is furnished with first total reflective mirror, the first total reflective mirror speculum has that two dimension angular is regulated and along emergent light axis one dimension translational adjustment function, the output of described laser beam splitting system is provided with second total reflective mirror, and second total reflective mirror has along incident light axis one dimension translational adjustment function.
Further, the method for designing of above-mentioned LED wafer tri-laser-beam scribing equipment, wherein, described focus lamp is installed on the one dimension straight-line motion mechanism that can move vertically, and described one dimension straight-line motion mechanism is connected with a motor-driven.
Again further, the method for designing of above-mentioned LED wafer tri-laser-beam scribing equipment, wherein, the multiplying power adjustable range of described beam expanding lens is 8～15 times.
Again further, the method for designing of above-mentioned LED wafer tri-laser-beam scribing equipment, wherein, described laser instrument is a semiconductor pump laser, the optical maser wavelength of output is 355nm.
Substantive distinguishing features and obvious improvement that technical solution of the present invention is outstanding are mainly reflected in:
1. adopt succinct and the complete light path design of function, the light spot energy on control Laser Processing plane that can be convenient, flexible distributes, and adapts to the scribing of the LED wafer of different size;
2. adopt unique laser beam splitting system to realize the function of the parallel scribing of three light beams, the laser beam splitting system is with the three beams that is divided into of the equal power of Ultra-Violet Laser light source equidimension of Dan Shu, and three beams of laser is through the equally spaced processing platform surface that focuses on behind the focus lamp, three-beam scribing live width and degree of depth basically identical make scribing efficient promote at double;
3. regulate the angle on three beam Propagation planes by accurate electric rotating machine, be reflected in three focal beam spot lines in processing platform surface and processing platform motion X axis and Y-axis to angle, and then realize three focal beam spots processing platform X axis and Y-axis to the accurate control of spacing;
4. this equipment is better realized the parallel scribing of LED wafer three light beams, is widely used in the cutting of blue-ray LED wafer, satisfies LED wafer production production capacity demand.
Description of drawings
Below in conjunction with accompanying drawing technical solution of the present invention is described further:
Fig. 1: the structural representation of system of the present invention;
Fig. 2: the schematic diagram of laser optical path structure of the present invention.
The implication of each Reference numeral sees the following form among the figure:
| Reference numeral | Implication | Reference numeral | Implication | Reference numeral | Implication |
| ??1 | Laser instrument | ??2 | The laser beam splitting system | ??3 | Processing platform |
| ??4 | Control system | ??5 | Optical gate | ??6 | Beam expanding lens |
| ??7 | First total reflective mirror | ??8 | Second total reflective mirror | ??9 | Focus lamp |
The specific embodiment
Design a kind of LED wafer tri-laser-beam scribing equipment, adopt succinct and the complete light path design of function, the light spot energy of laser be can control easily and flexibly, the scribing degree of depth and live width in the whole processing breadth under the prerequisite that guarantees cutting efficiency, stablized at processing plane; Adopt unique laser beam splitting system that the single beam laser source equal energy of equidimension is divided into the parallel processing platform that focuses on of three beams of laser, by the angle of accurate electric rotating machine control branch optical plane, and then the control three beams of laser focuses on the X-axis of processing platform and the spacing of Y direction.
Device systems as shown in Figure 1, mainly comprise laser instrument 1, laser beam splitting system 2, processing platform 3 and control system 4, the laser that sends from laser instrument 1 incides the laser beam splitting system 2, through laser beam splitting system 2 single beam laser source energy even is divided into that three beams of laser is parallel to focus on the processing platform 3.By laser beam splitting system 2 the single beam laser source is divided into the unidimensional three beams of laser of three beams constant power, three beams of laser is through the equally spaced processing platform that focuses on behind the focus lamp, and spectrum groupware has axial accurate electric rotating machine, realize that laser three light beams divide the precision of light direction and the processing platform X-axis or the Y-axis direction of motion to control, and then realize three light beams accurately adjustable continuously in processing platform X-axis or Y direction spacing.Control system 4 comprises motion control card and driver, and by the grating chi angulation position precise closed-loop control of motor internal, control system 4 is used for the Comprehensive Control of laser instrument, processing platform 3, laser beam splitting system 2.Between laser instrument 1 and the control system 4 by the RS232 serial communication, realize control system 4 to laser instrument 1 transfer control instruction and laser instrument 1 to control system 4 transferring status datas.Control system 4 sends the direction that pulse signal is controlled accurate electric rotating machine to laser beam splitting system 2, and the angle feedback of grating chi forms closed-loop control.Realize the motion closed-loop control by motion control card between processing platform 3 and the control system 4.
Laser optical path structure of the present invention, as shown in Figure 2, comprise laser instrument 1, beam expanding lens 6, laser beam splitting system 2, focus lamp 9, processing platform 3 and control system 4, laser instrument 1 is a semiconductor pump laser, the optical maser wavelength of output is 355nm, the output of laser instrument 1 is provided with the optical gate 5 that is used to control the laser break-make, the output of optical gate 5 is connected with and is used for the beam expanding lens 6 that laser facula expands the adjusting of bundle multiplying power, the multiplying power adjustable range of beam expanding lens 6 is 8～15 times, the output of beam expanding lens 6 is furnished with first total reflective mirror 7, first total reflective mirror 7 has that two dimension angular is regulated and along emergent light axis one dimension translational adjustment function, the linking of first total reflective mirror, 7 outputs is useful on the laser beam splitting system 2 that the single beam laser source is divided into three beams of laser, the output of laser beam splitting system 2 is provided with second total reflective mirror 8, second total reflective mirror 8 has along incident light axis one dimension translational adjustment function, second total reflective mirror 8 is connected focus lamp 9, focus lamp 9 is installed on the one dimension straight-line motion mechanism that can move vertically, the one dimension straight-line motion mechanism is connected with a motor-driven, and focus lamp 9 is right against processing platform 3.
Laser instrument 1 emitting laser incides optical gate 5, and the effect of optical gate 5 is the break-makes that are used to control laser, and optical gate stops incident laser when not needing laser scribing, prevents overflowing of laser; Laser impinges perpendicularly on beam expanding lens 6 through optical gate 5, beam expanding lens 6 has 8～15 times multiplying power regulatory function, by the first-order theory principle as can be known for having the optical focusing system that expands beam function, the expansion bundle multiplying power of beam expanding lens and the waist diameter of focal beam spot are inversely proportional to, therefore the Energy distribution of the effective control system focal beam spot of the beam expanding lens of adjustable multiplying power energy; Incide that first total reflective mirror, 7, the first total reflective mirrors 7 have that two dimension angular is regulated and along emergent light axis one dimension translational adjustment function through the laser behind the beam expanding lens 6; Incide laser beam splitting system 2 through the laser behind first total reflective mirror 7, the single beam laser source is divided into three beams of laser, be the laser of the equal energy of laser beam splitting system 2 output three beams equidimensions, the three beams of laser of the equal energy of equidimension incides second total reflective mirror, 8, the second total reflective mirrors 8 to have along incident light axis one dimension translational adjustment function; Three beams parallel laser behind second total reflective mirror, 8 corners incides focus lamp 9, focus lamp 9 is installed on the straight-line motion mechanism with vertical lift function, adjusts the Energy distribution of processing plane focal beam spot flexibly by the distance between control focus lamp 9 and the processing plane 3; See through parallel the focusing on the processing platform 3 of three beams of laser of focus lamp 9, the three-beam on the processing platform surface is located along the same line, and middle beam of laser equates with the center distance of both sides laser.
Need to prove, laser beam splitting system 2 comprises accurate electric rotating machine, accurate electric rotating machine has grating chi feedback function, the directional light that is divided into the equal energy of three beams equidimension after the single beam laser source process laser beam splitting system 2, and three-beam transmits in same plane, regulate accurate electric rotating machine angle then the transport plane of three light beams to equidirectional rotation with angle takes place correspondingly, after second total reflective mirror 8 and focus lamp 9,3 that focus on processing platform 3 surfaces are positioned on the same line, and the X axis of this line and processing platform 3 and Y-axis to angle change with accurate electric rotating machine angle and change.The equal energy of three beams of laser equidimension has identical Energy distribution through behind the focus lamp on the processing platform surface, and then determines that the line width and the degree of depth of three light beams are suitable.
Technical solution of the present invention can be satisfied with and be realized the parallel scribing of LED wafer three light beams, significantly improves scribing efficient. Highlight following characteristics: 1) adopt succinct and the complete light path design of function, the spot energy distribution on control Laser Processing plane that can be convenient, flexible adapts to the scribing of the LED wafer of different size; 2) the unique laser beam splitting system of employing realizes the function of the parallel scribing of three light beams, so that scribing efficient promotes at double; 3) angle between the parallel three-beam of employing high technology ceramics Electric Machine Control and processing platform X axle or the Y-axis, the control three-beam is adjustable at the continuous precision of X-axis and Y direction spacing, and this high technology ceramics motor is by the accurate positioning control of closed loop of high-resolution grating scale and driver, motion control card angulation position.
As fully visible, present device can be widely used in the cutting of blue-ray LED wafer, satisfies LED wafer production production capacity demand, and economic benefit and social benefit are remarkable, and application prospect is very good.
What need to understand is: above-mentioned explanation is not to be limitation of the present invention, and in the present invention conceived scope, the interpolation of carrying out, conversion, replacement etc. also should belong to protection scope of the present invention.
Claims (4)
1.LED the method for designing of wafer tri-laser-beam scribing equipment, comprise laser instrument (1), processing platform (3) and control system (4), it is characterized in that: the output of described laser instrument (1) is provided with the optical gate (5) that is used to control the laser break-make, the output of described optical gate (5) is connected with and is used for the beam expanding lens (6) that laser facula expands the adjusting of bundle multiplying power, the output of described beam expanding lens (6) is furnished with first total reflective mirror (7), the linking of first total reflective mirror (7) output is useful on the laser beam splitting system (2) that the single beam laser source is divided into three beams of laser, the output of described laser beam splitting system (2) is provided with second total reflective mirror (8), described second total reflective mirror (8) is connected focus lamp (9), and described focus lamp (9) is right against processing platform (3); Described laser instrument (1) emitting laser impinges perpendicularly on beam expanding lens (6) through optical gate (5), laser behind beam expanding lens (6) incides first total reflective mirror (7), laser behind first total reflective mirror (7) incides laser beam splitting system (2), the laser of the equal energy of laser beam splitting system (2) output three beams equidimension, the three beams of laser of the equal energy of equidimension incides second total reflective mirror (8), three beams parallel laser behind second total reflective mirror (8) corner incides focus lamp (9), see through parallel the focusing on the processing platform (3) of three beams of laser of focus lamp (9), three-beam on the processing platform surface is located along the same line, and middle beam of laser equates with the center distance of both sides laser.
2. the method for designing of LED wafer tri-laser-beam scribing equipment according to claim 1, it is characterized in that: described focus lamp (9) is installed on the one dimension straight-line motion mechanism that can move vertically, and described one dimension straight-line motion mechanism is connected with a motor-driven.
3. the method for designing of LED wafer tri-laser-beam scribing equipment according to claim 1 is characterized in that: the multiplying power adjustable range of described beam expanding lens (6) is 8～15 times.
4. the method for designing of LED wafer tri-laser-beam scribing equipment according to claim 1 is characterized in that: described laser instrument (1) is a semiconductor pump laser, and the optical maser wavelength of output is 355nm.
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| CN 200910182534 CN101670492A (en) | 2009-09-16 | 2009-09-16 | Designing method for LED wafer tri-laser-beam scribing equipment |
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| CN 200910182534 CN101670492A (en) | 2009-09-16 | 2009-09-16 | Designing method for LED wafer tri-laser-beam scribing equipment |
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| CN101983825A (en) * | 2010-10-09 | 2011-03-09 | 苏州德龙激光有限公司 | Picosecond laser scribing device for light emitting diode (LED) wafer |
| CN102248289A (en) * | 2011-01-13 | 2011-11-23 | 苏州德龙激光有限公司 | Laser scribing insulation equipment for crystalline silicon solar cell |
| CN103368106A (en) * | 2013-07-04 | 2013-10-23 | 武汉凌云光电科技有限责任公司 | Laser-rotating wire stripping machine for wire insulation layer |
| CN103506759A (en) * | 2012-06-14 | 2014-01-15 | 株式会社迪思科 | Laser processing apparatus |
| CN104377275A (en) * | 2013-08-16 | 2015-02-25 | 刘艳 | Method for segmenting flip-chip LED chip of sapphire substrate |
| CN104439716A (en) * | 2014-11-17 | 2015-03-25 | 深圳锜宏伟科技有限公司 | Laser processing system and laser processing method |
| CN104785923A (en) * | 2014-01-22 | 2015-07-22 | 深圳市韵腾激光科技有限公司 | Multi-point focusing laser processing device |
| CN105397312A (en) * | 2014-09-11 | 2016-03-16 | 大族激光科技产业集团股份有限公司 | Efficient processing head for optical fiber laser |
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| CN107437532A (en) * | 2016-05-26 | 2017-12-05 | 大族激光科技产业集团股份有限公司 | A kind of Ultra-Violet Laser surface cutting method of LED wafer |
| CN107971645A (en) * | 2017-12-29 | 2018-05-01 | 苏州德龙激光股份有限公司 | Quaternary LED wafer is exempted to coat laser surface cutter device and its method |
| CN111055018A (en) * | 2019-12-29 | 2020-04-24 | 中国科学院西安光学精密机械研究所 | Drag reduction microstructure machining system and method |
| CN111451646A (en) * | 2020-04-24 | 2020-07-28 | 苏州镭明激光科技有限公司 | Processing technology for laser invisible cutting of wafer |
| CN115008026A (en) * | 2022-05-23 | 2022-09-06 | 合肥泰沃达智能装备有限公司 | Light guide plate processing device based on array rotation |
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- 2009-09-16 CN CN 200910182534 patent/CN101670492A/en active Pending
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| CN101983825A (en) * | 2010-10-09 | 2011-03-09 | 苏州德龙激光有限公司 | Picosecond laser scribing device for light emitting diode (LED) wafer |
| CN102248289A (en) * | 2011-01-13 | 2011-11-23 | 苏州德龙激光有限公司 | Laser scribing insulation equipment for crystalline silicon solar cell |
| CN103506759A (en) * | 2012-06-14 | 2014-01-15 | 株式会社迪思科 | Laser processing apparatus |
| CN103368106A (en) * | 2013-07-04 | 2013-10-23 | 武汉凌云光电科技有限责任公司 | Laser-rotating wire stripping machine for wire insulation layer |
| CN103368106B (en) * | 2013-07-04 | 2015-07-29 | 武汉凌云光电科技有限责任公司 | Wire insulation laser rotary wire stripper |
| CN104377275A (en) * | 2013-08-16 | 2015-02-25 | 刘艳 | Method for segmenting flip-chip LED chip of sapphire substrate |
| CN104785923A (en) * | 2014-01-22 | 2015-07-22 | 深圳市韵腾激光科技有限公司 | Multi-point focusing laser processing device |
| CN105397312A (en) * | 2014-09-11 | 2016-03-16 | 大族激光科技产业集团股份有限公司 | Efficient processing head for optical fiber laser |
| CN104439716A (en) * | 2014-11-17 | 2015-03-25 | 深圳锜宏伟科技有限公司 | Laser processing system and laser processing method |
| CN107437532A (en) * | 2016-05-26 | 2017-12-05 | 大族激光科技产业集团股份有限公司 | A kind of Ultra-Violet Laser surface cutting method of LED wafer |
| CN107437532B (en) * | 2016-05-26 | 2020-04-24 | 大族激光科技产业集团股份有限公司 | Ultraviolet laser surface cutting method for LED wafer |
| CN107186354A (en) * | 2017-06-02 | 2017-09-22 | 深圳华创兆业科技股份有限公司 | The laser grooving system and method for IC-card |
| CN107186357B (en) * | 2017-06-02 | 2019-09-06 | 深圳华创兆业科技股份有限公司 | The laser cutting system and method for IC card |
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| CN107186357A (en) * | 2017-06-02 | 2017-09-22 | 深圳华创兆业科技股份有限公司 | The laser cutting system and method for IC-card |
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| CN107971645A (en) * | 2017-12-29 | 2018-05-01 | 苏州德龙激光股份有限公司 | Quaternary LED wafer is exempted to coat laser surface cutter device and its method |
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| CN111055018B (en) * | 2019-12-29 | 2020-11-17 | 中国科学院西安光学精密机械研究所 | Anti-drag microstructure machining method |
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| CN115008026A (en) * | 2022-05-23 | 2022-09-06 | 合肥泰沃达智能装备有限公司 | Light guide plate processing device based on array rotation |
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