CN101564794A - Ultraviolet laser device for cutting copper substrate for high-power LED chip - Google Patents
Ultraviolet laser device for cutting copper substrate for high-power LED chip Download PDFInfo
- Publication number
- CN101564794A CN101564794A CN 200910027561 CN200910027561A CN101564794A CN 101564794 A CN101564794 A CN 101564794A CN 200910027561 CN200910027561 CN 200910027561 CN 200910027561 A CN200910027561 A CN 200910027561A CN 101564794 A CN101564794 A CN 101564794A
- Authority
- CN
- China
- Prior art keywords
- speculum
- laser
- processing platform
- ccd
- ultraviolet laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Laser Beam Processing (AREA)
Abstract
The invention relates to an ultraviolet laser device for cutting a copper substrate for a high-power LED chip, which comprises an ultraviolet laser, an optical image system and a processing platform, wherein the output end of the ultraviolet laser is provided with an optical shutter; the output end of the optical shutter is connected with a beam expanding lens; the output end of the beam expanding lens is distributed with a first reflector; the first reflector is jointed with a second reflector; the output end of the second reflector is connected with a focusing mirror; the focusing mirror is just opposite to the processing platform; the optical image system comprises a third reflector, a fourth reflector, a first CCD, a second CCD, a first lighting source, a second lighting source and a third CCD; laser emitted by the ultraviolet laser enters the optical shutter and vertically enters the beam expanding lens from the optical shutter; the laser enters the first 45-degree reflector and the second 45-degree reflector in turn after passing through the beam expanding lens, the laser vertically enters the focusing mirror after being reflected; the laser focuses on the processing platform after passing through the focusing mirror; and copper base material LED chip is absorbed on the processing platform, and thus the copper base material is cut at a time by the ultraviolet laser.
Description
Technical field
The present invention relates to a kind of ultraviolet laser device that is used for cutting copper substrate for high-power LED chip, belong to the laser accurate processing technique field.
Background technology
As everyone knows, semiconductor crystal wafer adopts the method growing semiconductor material of vapour deposition often on the similar base material of lattice, needs some inches wafer is cut into the crystal grain of smaller szie before the encapsulation of semiconductor devices terminal applies.Nowadays semiconductor chip is more paid close attention to the heat dissipation problem of chip, so the base material of wafer trends towards selecting for use the copper metal material, and the variation of base material has proposed new requirement to laser cutting device.General led chip all is to use sapphire as base material, and main research work at present concentrates on the cutting technique aspect of copper base material, and the led chip of sapphire substrate heat dispersion when using is poor, heat is concentrated, aging easily, the life-span of use is short, and cost is than higher; And the led chip of copper base material, the heat radiation of copper base material is relatively good, and spread heat is fast, long service life, cost is lower.
Traditional wafer cutting is to adopt mechanical system processing such as emery wheel, diamond tool, yet the machining mode exists, and process velocity is slow, cutting groove live width, shortcoming that yield is low, especially when cutting as the scleroid base material of sapphire, machine cuts efficient is low, expense is high, the wafer that cuts 2 inches is generally 1～2 slice/hour, and each diamond blade only can be cut 2～3.When cutting copper base material machinery processing mode, expense low except above-mentioned efficient high, and the bad order rate height that cuts out, along with the development of semicon industry, the kind of semiconductor copper base material wafer is also more and more, and this has just proposed new requirement to the cutting of copper base material wafer.Ultra-Violet Laser cutting copper base technology adopts 355nm or other short wavelength's Ultra-Violet Laser non-contact laser cold working, has beam quality height (M
2＜1.2), pulse frequency height (30kHz～120kHz), pulse width (＜20ns) characteristics.The outstanding focusing power of Ultra-Violet Laser is easy to realize the cutting live width less than 10um in addition, compares with the cutting live width more than the traditional machine cuts 30um have remarkable advantages aspect the precision cutting.
Summary of the invention
The objective of the invention is to overcome the deficiency that prior art exists, a kind of ultraviolet laser device that is used for cutting copper substrate for high-power LED chip is provided, be intended to cut down finished cost, simplified processing process improves working (machining) efficiency and machining accuracy.
Purpose of the present invention is achieved through the following technical solutions:
The ultraviolet laser device that is used for cutting copper substrate for high-power LED chip, comprise ultraviolet laser, optical imagery system and processing platform, characteristics are: the output of described ultraviolet laser is provided with optical gate, the output of optical gate is connected with beam expanding lens, the output of beam expanding lens is furnished with first speculum, first speculum is connected second speculum, and the output of second speculum is connected with focus lamp, and focus lamp is right against processing platform; The laser that ultraviolet laser sends incides optical gate, laser impinges perpendicularly on beam expanding lens through optical gate, incide 45 degree first speculum and second speculums successively through the laser behind the beam expanding lens, the laser vertical after the reflection incides focus lamp, and the laser that sees through focus lamp focuses on the processing platform;
Described optical imagery system comprises the 3rd speculum, the 4th speculum, a CCD, the 2nd CCD, first lighting source, second lighting source and the 3rd CCD; The optical axis of the first lighting source bright dipping is consistent with the optical axis that laser vertical incides processing platform, and the light that first lighting source penetrates sees through the 4th speculum, the 3rd speculum, second speculum and focus lamp successively, is radiated at the upper surface of workpiece on the processing platform; After the light of workpiece surface reflection on the processing platform passes through focus lamp, second speculum, the 3rd speculum, the 4th speculum successively, incide a CCD and the 2nd CCD respectively, wherein a CCD accurately locatees workpiece front small breadth, and the 2nd CCD is to the edge identification of large format; The optical axis of the second lighting source bright dipping is consistent with the optical axis that laser vertical incides processing platform, second lighting source impinges perpendicularly on the lower surface of workpiece on the processing platform from bottom to top, light through the reflection of workpiece lower surface turns back to the 3rd CCD, and the 3rd CCD accurately locatees the workpiece lower surface.
Further, the above-mentioned ultraviolet laser device that is used for cutting copper substrate for high-power LED chip, wherein, described processing platform comprises marble base station, X-axis line slideway, Y-axis line slideway, R axle electric rotating machine and suprasil table top, the X-axis line slideway is installed on the marble base station with the Y-axis line slideway is vertical relatively, R axle electric rotating machine is installed on the Y-axis line slideway, and the suprasil table top is installed on R axle electric rotating machine.
Again further, the above-mentioned ultraviolet laser device that is used for cutting copper substrate for high-power LED chip, wherein, the output wavelength of described ultraviolet laser is 355nm.
Substantive distinguishing features and obvious improvement that technical solution of the present invention is outstanding are mainly reflected in:
The present invention can realize the disposable cutting copper of Ultra-Violet Laser base material, copper base material led chip is adsorbed on the processing platform, during Laser Processing laser beam axis keep motionless and processing platform with respect to optical axis in two axial linear movement of X, Y, each parameter control such as the process velocity of the frequency by changing laser instrument, energy, glass platform, focal length is to the depth of cut of copper base material, disposable cutting worn the copper base material, improves working (machining) efficiency.A glass platform is installed, in order to avoid cutting damage platform when wearing the copper base material on quartzy platform.This equipment process is succinct, the machining accuracy height, and easy to use, market application foreground is wide.
Description of drawings
Below in conjunction with accompanying drawing technical solution of the present invention is described further:
Fig. 1: structural principle schematic diagram of the present invention;
Fig. 2: the structural representation of processing platform.
The implication of each Reference numeral sees the following form among the figure:
| Reference numeral | Implication | Reference numeral | Implication | Reference numeral | Implication |
| 1 | |
2 | |
3 | |
| 4 | |
5 | |
6 | |
| 7 | The |
8 | The |
9 | The one |
| 10 | The |
11 | |
12 | |
| 13 | The |
14 | |
15 | The marble base station |
| Reference numeral | Implication | Reference numeral | Implication | Reference | Implication | |
| 16 | The |
17 | The Y-axis line slideway | 18 | R axle |
|
| 19 | The suprasil table top |
The specific embodiment
As shown in Figure 1, the ultraviolet laser device that is used for cutting copper substrate for high-power LED chip, comprise ultraviolet laser 1, optical imagery system and processing platform 14, the output wavelength of ultraviolet laser 1 is 355nm, the output of ultraviolet laser 1 is provided with optical gate 2, the output of optical gate 2 is connected with beam expanding lens 3, the output of beam expanding lens 3 is furnished with first speculum 4, first speculum 4 is connected second speculum 5, the output of second speculum 5 is connected with focus lamp 6, and focus lamp 6 is right against processing platform 14; The laser that ultraviolet laser 1 sends incides optical gate 2, laser impinges perpendicularly on beam expanding lens 3 through optical gate 2, incide 45 degree first speculum 4 and second speculums 5 successively through the laser behind the beam expanding lens 3, laser vertical after the reflection incides focus lamp 6, and the laser that sees through focus lamp 6 focuses on the processing platform 14.The optical imagery system comprises the 3rd speculum 7, the 4th speculum 8, a CCD 9, the 2nd CCD 10, first lighting source 11, second lighting source 12 and the 3rd CCD 13; The optical axis of first lighting source, 11 bright dippings is consistent with the optical axis that laser vertical incides processing platform 14, the light that first lighting source 11 penetrates sees through the 4th speculum 8, the 3rd speculum 7, second speculum 5 and focus lamp 6 successively, is radiated at the upper surface of workpiece on the processing platform 14; After the light of workpiece surface reflection on the processing platform 14 passes through focus lamp 6, second speculum 5, the 3rd speculum 7, the 4th speculum 8 successively, incide a CCD 9 and the 2nd CCD 10 respectively, wherein a CCD9 accurately locatees workpiece front small breadth, and the 2nd CCD10 is to the edge identification of large format; The optical axis of second lighting source, 12 bright dippings is consistent with the optical axis that laser vertical incides processing platform 14, second lighting source 12 impinges perpendicularly on the lower surface of workpiece on the processing platform 14 from bottom to top (because the loading plane of processing platform 14 is transparent quartzy material, lighting source can see through), light through the reflection of workpiece lower surface turns back to the 3rd CCD13, the 3rd CCD13 has the characteristic of the big multiplying power of small breadth, is used for the accurate location of workpiece lower surface.
Wherein, the break-make of optical gate 2 control laser, optical gate 2 stops that incident laser prevents overflowing of laser when not needing laser cutting.Beam expanding lens 3 has 8～15 times multiplying power regulatory function, be inversely proportional to for the expansion bundle multiplying power with the optical focusing system beam expanding lens that expands beam function and the waist diameter of focal beam spot as can be known by the first-order theory principle, therefore the Energy distribution of the effective control system focal beam spot of beam expanding lens 3 energy of adjustable multiplying power.The laser of beam expanding lens 3 outputs incides 45 ° of first speculum 4 earlier, reenter and be mapped to 45 ° of second speculum 5,4 couples of ultraviolet 355nm of first speculum laser carries out 45 ° and is all-trans, and 5 couples of ultraviolet 355nm of second speculum laser carries out 45 ° and is all-trans and anti-reflection to 45 ° of illumination light; Laser vertical behind second speculum, 5 corners incides focus lamp 6, focus lamp 6 is installed on the one dimension linear electric motors with vertical lift function, adjusts the Energy distribution of processing plane focal beam spot flexibly by the distance between control focus lamp 6 and the processing plane 14.The 4th speculum 8 is 1: 1 at 45 ° to illumination light reflection and transmission ratio, and the 3rd speculum 7 is 1: 2 at 45 ° to illumination light reflection and transmission ratio, and second speculum 5 is all-trans and the illumination light full impregnated at 45 ° of light to the 355nm wavelength.The one CCD9 has the characteristic of the big multiplying power of small field of view, is used for workpiece front small breadth and accurately locatees, and the 2nd CCD10 has the characteristic of the big multiplying power of small field of view, is used for workpiece front small breadth and accurately locatees.
As shown in Figure 2, processing platform 14 comprises marble base station 15, X-axis line slideway 16, Y-axis line slideway 17, R axle electric rotating machine 18 and suprasil table top 19, X-axis line slideway 16 is installed on the marble base station 15 with Y-axis line slideway 17 is vertical relatively, R axle electric rotating machine 18 is installed on the Y-axis line slideway 17, and suprasil table top 19 is installed on R axle electric rotating machine 18.Wherein, marble base station 15 has good resistance to shock, effectively improves the stability of processing platform; X-axis line slideway 16 and Y-axis line slideway 17 all have high-resolution grating chi as FEEDBACK CONTROL, and its positioning accuracy can reach micron dimension; The Surface Machining of quartzy table top 19 has capillary through holes to realize vacuum suction, and second lighting source 12 can see through the function that quartzy table top 19 is realized workpiece lower surface capture location.There is the hole of vacuum suction on quartzy platform 19 surfaces, on quartzy platform 19, add the glass platform of a bed thickness 1.6mm, the external diameter of glass platform is slightly more a little bigger than quartzy platform 19, on glass platform, bore and the corresponding through hole of quartzy platform so that can be on glass platform absorbing copper base material led chip.
During concrete the application, glass platform is attached to earlier on the quartzy platform 19, both holes are corresponding consistent, debugging the one CCD 9, the 2nd CCD 10, the 3rd CCD13 image is coaxial with laser optical path, the front of the led chip of copper base material is attached on the tunica albuginea, tunica albuginea is adsorbed on the glass platform, the back side of chip upwards, cut normal fracture with the back of the body, be pressed on the chip, the figure of having time in the middle of the potsherd with the thick potsherd of 1mm, its figure is consistent with the appearance graphic of wafer, the outside of the inner edge of its middle figure and wafer was tangent when potsherd pressed, the machined parameters of cutting copper base material, and the used parameter of ultraviolet laser is frequency 50KHZ, laser is about 2.5W to the platform energy, platform X and Y to cutting speed all be 10mm/sec, if the single crystal grain 1*1mm on the copper base material led chip, cutting is about 7 minutes the full wafer used time of wafer.The road of drawing with the 3rd CCD13 observation wafer frontside, the position of having good positioning and processing, to improve precision, for guaranteeing the disposable chip of wearing 90um of cutting, with the 3rd CCD13 observation cutting process, whether can see in the 3rd CCD13 that laser has seen through chip, cutting speed by changing platform or the frequency that changes laser instrument are debugged the degree of depth of cutting.Because of the viscosity ratio of copper base material better, if laser does not switch to the border of wafer, chip behind the well cutting still can glue, in the cutting setting up procedure, the setting on the border of cutting crystal wafer than the slightly outside 0.1mm in the border of wafer about, the external boundary that makes each road laser pass wafer can both switch on the potsherd.
In sum, the present invention designs uniqueness, novel structure, beam quality is high, pulse frequency is high, pulse width, focusing power are strong, add one deck glass platform at processing platform, 2 inches copper base material LED chips, the thickness of copper base material chip is 90um, copper base material led chip is adsorbed on the processed glass platform, the Ultra-Violet Laser that laser instrument sends impinges perpendicularly on the processing platform after entering transmission laser system, by the optical imagery system copper base material led chip to be processed is positioned before the laser cutting and the planning of cutting track, during Laser Processing laser beam axis keep motionless and processing platform with respect to optical axis in two axial linear movement of X, Y. Adopt Ultra-Violet Laser that copper base material wafer is cut with common machining mode and compare, reduced processing cost, simplified processing technology, significantly improve working (machining) efficiency and machining accuracy.
What need to understand is: above-mentioned explanation is not to be limitation of the present invention, and in the present invention conceived scope, the interpolation of carrying out, conversion, replacement etc. also should belong to protection scope of the present invention.
Claims (3)
1. the ultraviolet laser device that is used for cutting copper substrate for high-power LED chip, comprise ultraviolet laser (1), optical imagery system and processing platform (14), it is characterized in that: the output of described ultraviolet laser (1) is provided with optical gate (2), the output of optical gate (2) is connected with beam expanding lens (3), the output of beam expanding lens (3) is furnished with first speculum (4), first speculum (4) is connected second speculum (5), the output of second speculum (5) is connected with focus lamp (6), and focus lamp (6) is right against processing platform (14); The laser that ultraviolet laser (1) sends incides optical gate (2), laser impinges perpendicularly on beam expanding lens (3) through optical gate (2), incide 45 degree first speculum (4) and second speculums (5) successively through the laser behind the beam expanding lens (3), laser vertical after the reflection incides focus lamp (6), and the laser that sees through focus lamp (6) focuses on the processing platform (14);
Described optical imagery system comprises the 3rd speculum (7), the 4th speculum (8), a CCD (9), the 2nd CCD (10), first lighting source (11), second lighting source (12) and the 3rd CCD (13); The optical axis of first lighting source (11) bright dipping is consistent with the optical axis that laser vertical incides processing platform (14), the light that first lighting source (11) penetrates sees through the 4th speculum (8), the 3rd speculum (7), second speculum (5) and focus lamp (6) successively, is radiated at the upper surface that processing platform (14) is gone up workpiece; After the light of the last workpiece surface reflection of processing platform (14) passes through focus lamp (6), second speculum (5), the 3rd speculum (7), the 4th speculum (8) successively, incide a CCD (9) and the 2nd CCD (10) respectively; The optical axis of second lighting source (12) bright dipping is consistent with the optical axis that laser vertical incides processing platform (14), second lighting source (12) impinges perpendicularly on the lower surface that processing platform (14) is gone up workpiece from bottom to top, and the light that reflects through the workpiece lower surface turns back to the 3rd CCD (13).
2. the ultraviolet laser device that is used for cutting copper substrate for high-power LED chip according to claim 1, it is characterized in that: described processing platform (14) comprises marble base station (15), X-axis line slideway (16), Y-axis line slideway (17), R axle electric rotating machine (18) and suprasil table top (19), X-axis line slideway (16) is installed on the marble base station (15) with Y-axis line slideway (17) is vertical relatively, R axle electric rotating machine (18) is installed on the Y-axis line slideway (17), goes up at R axle electric rotating machine (18) suprasil table top (19) is installed.
3. the ultraviolet laser device that is used for cutting copper substrate for high-power LED chip according to claim 1 is characterized in that: the output wavelength of described ultraviolet laser (1) is 355nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910027561 CN101564794A (en) | 2009-05-12 | 2009-05-12 | Ultraviolet laser device for cutting copper substrate for high-power LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910027561 CN101564794A (en) | 2009-05-12 | 2009-05-12 | Ultraviolet laser device for cutting copper substrate for high-power LED chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101564794A true CN101564794A (en) | 2009-10-28 |
Family
ID=41281259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910027561 Pending CN101564794A (en) | 2009-05-12 | 2009-05-12 | Ultraviolet laser device for cutting copper substrate for high-power LED chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101564794A (en) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101844276A (en) * | 2010-03-05 | 2010-09-29 | 中国电子科技集团公司第四十五研究所 | Ultraviolet laser processing optical conduction device |
| CN101885113A (en) * | 2010-06-24 | 2010-11-17 | 深圳市大族激光科技股份有限公司 | Ultraviolet laser machining system |
| CN102000917A (en) * | 2010-10-25 | 2011-04-06 | 苏州德龙激光有限公司 | LED wafer laser inner cutting and scribing device |
| CN102249528A (en) * | 2011-01-13 | 2011-11-23 | 苏州德龙激光有限公司 | Device and method for glass three-dimensional processing |
| CN102319960A (en) * | 2011-07-27 | 2012-01-18 | 苏州德龙激光有限公司 | Device and method for making metal film group holes by using ultra-short pulse laser |
| CN102672760A (en) * | 2012-06-05 | 2012-09-19 | 震宇（芜湖）实业有限公司 | Plastic piece cutting device |
| CN102773612A (en) * | 2012-06-07 | 2012-11-14 | 江阴德力激光设备有限公司 | Vibrating mirror type ultraviolet laser cutting wafer chip device and method thereof |
| CN104999178A (en) * | 2015-08-15 | 2015-10-28 | 岳睿 | Laser welding device carrying multiple sensors |
| CN105234563A (en) * | 2015-10-23 | 2016-01-13 | 强茂电子(无锡)有限公司 | Back face laser cutting method for glassivation silicon wafer |
| CN105312773A (en) * | 2014-07-30 | 2016-02-10 | 深圳市韵腾激光科技有限公司 | Laser cutting method for wafers |
| CN105345268A (en) * | 2014-08-18 | 2016-02-24 | 深圳市韵腾激光科技有限公司 | Laser scribing machine |
| CN106346142A (en) * | 2016-11-02 | 2017-01-25 | 江苏弘信华印电路科技有限公司 | Method for producing single PCS substrate by UV laser cutting |
| CN106454048A (en) * | 2016-07-29 | 2017-02-22 | 大族激光科技产业集团股份有限公司 | Pseudo coaxial CCD shooting system and laser processing device employing the system |
| CN109926733A (en) * | 2019-04-01 | 2019-06-25 | 大族激光科技产业集团股份有限公司 | Laser cutting device and laser cutting method |
| CN111906451A (en) * | 2020-06-19 | 2020-11-10 | 宁波大艾激光科技有限公司 | CVD laser processing equipment and operation method |
| CN112730433A (en) * | 2020-12-25 | 2021-04-30 | 中国工程物理研究院激光聚变研究中心 | Laser damage testing system and method |
-
2009
- 2009-05-12 CN CN 200910027561 patent/CN101564794A/en active Pending
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101844276A (en) * | 2010-03-05 | 2010-09-29 | 中国电子科技集团公司第四十五研究所 | Ultraviolet laser processing optical conduction device |
| CN101885113A (en) * | 2010-06-24 | 2010-11-17 | 深圳市大族激光科技股份有限公司 | Ultraviolet laser machining system |
| CN102000917A (en) * | 2010-10-25 | 2011-04-06 | 苏州德龙激光有限公司 | LED wafer laser inner cutting and scribing device |
| CN102000917B (en) * | 2010-10-25 | 2013-04-24 | 苏州德龙激光股份有限公司 | LED wafer laser inner cutting and scribing device |
| CN102249528A (en) * | 2011-01-13 | 2011-11-23 | 苏州德龙激光有限公司 | Device and method for glass three-dimensional processing |
| CN102319960A (en) * | 2011-07-27 | 2012-01-18 | 苏州德龙激光有限公司 | Device and method for making metal film group holes by using ultra-short pulse laser |
| CN102672760A (en) * | 2012-06-05 | 2012-09-19 | 震宇（芜湖）实业有限公司 | Plastic piece cutting device |
| CN102672760B (en) * | 2012-06-05 | 2015-01-21 | 震宇（芜湖）实业有限公司 | Plastic piece cutting device |
| CN102773612A (en) * | 2012-06-07 | 2012-11-14 | 江阴德力激光设备有限公司 | Vibrating mirror type ultraviolet laser cutting wafer chip device and method thereof |
| CN102773612B (en) * | 2012-06-07 | 2015-06-10 | 江阴德力激光设备有限公司 | Vibrating mirror type ultraviolet laser cutting wafer chip device and method thereof |
| CN105312773A (en) * | 2014-07-30 | 2016-02-10 | 深圳市韵腾激光科技有限公司 | Laser cutting method for wafers |
| CN105345268A (en) * | 2014-08-18 | 2016-02-24 | 深圳市韵腾激光科技有限公司 | Laser scribing machine |
| CN104999178A (en) * | 2015-08-15 | 2015-10-28 | 岳睿 | Laser welding device carrying multiple sensors |
| CN104999178B (en) * | 2015-08-15 | 2017-05-03 | 龙光电子集团有限公司 | Laser welding device carrying multiple sensors |
| CN105234563A (en) * | 2015-10-23 | 2016-01-13 | 强茂电子(无锡)有限公司 | Back face laser cutting method for glassivation silicon wafer |
| CN105234563B (en) * | 2015-10-23 | 2017-07-28 | 强茂电子(无锡)有限公司 | A kind of back laser cutting method of glass passivated silicon wafer |
| CN106454048A (en) * | 2016-07-29 | 2017-02-22 | 大族激光科技产业集团股份有限公司 | Pseudo coaxial CCD shooting system and laser processing device employing the system |
| CN106454048B (en) * | 2016-07-29 | 2019-12-24 | 大族激光科技产业集团股份有限公司 | Pseudo-coaxial CCD shooting system and laser processing device adopting same |
| CN106346142A (en) * | 2016-11-02 | 2017-01-25 | 江苏弘信华印电路科技有限公司 | Method for producing single PCS substrate by UV laser cutting |
| CN109926733A (en) * | 2019-04-01 | 2019-06-25 | 大族激光科技产业集团股份有限公司 | Laser cutting device and laser cutting method |
| CN111906451A (en) * | 2020-06-19 | 2020-11-10 | 宁波大艾激光科技有限公司 | CVD laser processing equipment and operation method |
| CN112730433A (en) * | 2020-12-25 | 2021-04-30 | 中国工程物理研究院激光聚变研究中心 | Laser damage testing system and method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101564794A (en) | Ultraviolet laser device for cutting copper substrate for high-power LED chip | |
| CN101318264B (en) | Ultraviolet laser machining apparatus for cutting wafer | |
| KR101752016B1 (en) | Method for dividing optical device wafer | |
| KR101771420B1 (en) | Dividing method | |
| KR101875232B1 (en) | Method for detecting laser beam spot shape | |
| KR102303131B1 (en) | Laser machining apparatus | |
| CN101983825A (en) | Picosecond laser scribing device for light emitting diode (LED) wafer | |
| CN104722928A (en) | Laser machining and scribing systems and methods | |
| CN201516540U (en) | Novel LED wafer three-beam laser scribing apparatus | |
| CN108381043A (en) | A kind of laser processing of the transparent hard brittle material of non-smooth surface | |
| CN101670492A (en) | Designing method for LED wafer tri-laser-beam scribing equipment | |
| CN104668785A (en) | Laser rapid drilling device and laser rapid drilling method | |
| CN104599960A (en) | Laser cutting method for high-power power electronic device wafer | |
| CN203380515U (en) | Optical fiber laser cutting device | |
| CN201405162Y (en) | Novel UV laser device for cutting copper substrate used for high-power LED chip | |
| KR20120028215A (en) | Method for machining optical device wafer | |
| CN203426595U (en) | Wafer laser cutting device | |
| CN112475339A (en) | Laser in-situ auxiliary turning tool and using method thereof | |
| CN107824958A (en) | A kind of 355nm Ultra-Violet Lasers diamond cut equipment | |
| CN201408286Y (en) | Novel coaxial imaging system for LED laser cutting device | |
| CN113414889B (en) | Method and device for compounding laser-assisted diamond cutting and laser polishing in situ | |
| CN211840653U (en) | Automatic change accurate sheet metal device of laser beam machining | |
| CN109454337A (en) | Laser processing device | |
| CN201841362U (en) | Picosecond laser scribing device for LED wafer | |
| CN111421250A (en) | Semiconductor wafer laser cutting machine |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: JIANGYIN DELI LASER INSTRUMENT CO., LTD. Free format text: FORMER OWNER: JIANGYIN DEFEI LASER INSTRUMENT CO., LTD. |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20110630 Address after: 215021 Suzhou Industrial Park, Jiangsu, Hong Zhong Road, No. 77 Applicant after: Suzhou Delphi Laser Co., Ltd. Co-applicant after: Jiangyin Deli Laser Equipment Co., Ltd. Address before: 215021 Suzhou Industrial Park, Jiangsu, Hong Zhong Road, No. 77 Applicant before: Suzhou Delphi Laser Co., Ltd. Co-applicant before: Jiangyin Defei Laser Equipment Co., Ltd. |
|
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Open date: 20091028 |