CN201516540U - Novel LED wafer three-beam laser scribing apparatus - Google Patents
Novel LED wafer three-beam laser scribing apparatus Download PDFInfo
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- CN201516540U CN201516540U CN 200920232540 CN200920232540U CN201516540U CN 201516540 U CN201516540 U CN 201516540U CN 200920232540 CN200920232540 CN 200920232540 CN 200920232540 U CN200920232540 U CN 200920232540U CN 201516540 U CN201516540 U CN 201516540U
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- 238000012545 processing Methods 0.000 claims abstract description 40
- 230000003287 optical effect Effects 0.000 claims description 21
- 230000007246 mechanism Effects 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 4
- 241000931526 Acer campestre Species 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 abstract description 5
- 230000006870 function Effects 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 241001025261 Neoraja caerulea Species 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 241001269238 Data Species 0.000 description 1
- 241001050985 Disco Species 0.000 description 1
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- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000009711 regulatory function Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
The utility model relates to an LED wafer three-beam laser scribing apparatus, wherein a light shutter is provided at the output end of the laser, a beam enlarging mirror is connected to the output end of the light shutter, the output end of the beam enlarging mirror is arranged with a first full-reflection mirror, the output end of the first full-reflection mirror is connected with a laser light splitting system for splitting a single laser source into three lasers, a second full-reflection mirror is provided at the output end of the laser light splitting system, the second full-reflection mirror is connected to a focusing mirror, the focusing mirror is over against the processing platform; the laser emitted from the laser passes through the light shutter to vertically incident to the beam enlarging mirror, the laser after the beam enlarging mirror is incident onto the first full-reflection mirror, the laser after the first full-reflection mirror is incident onto the laser light splitting system, the laser light splitting system outputs three equidimension equal-energy laser to the second full-reflection mirror, the three paralleling lasers after rotation angle by the second full-reflection mirror are incident onto the focusing mirror, the three lasers permeating the focusing mirror paralleling focus on the processing platform. The apparatus realizes paralleling scribing of LED wafer beams, and is suitable for cutting LED wafer.
Description
Technical field
The utility model relates to laser process equipment, relates in particular to the high-accuracy process equipment of Ultra-Violet Laser of a kind of novel LED of being used for wafer scribing, belongs to the laser accurate technical field of processing equipment.
Background technology
As everyone knows, the blue-ray LED wafer adopts the method growing GaN luminescent layer of vapour deposition often on the process for sapphire-based bottom material, general blue-ray LED wafer size is 2 inches at present, needs some inches wafer is cut into the crystal grain of smaller szie before the encapsulation of LED terminal applies.LED wafer cutting for sapphire substrate has substituted previous diamond cutter by the Ultra-Violet Laser scribing at present fully, and by the importing of laser new technology, the scribing time of typical 12mil * 12mil crystallite dimension is about 8 minutes.
Development along with the LED industry, the reduction of LED price and the lifting of luminous efficiency, driven led chip popularizing in every profession and trade, especially recently LED makes the blowout of LED production demand in the extensive use of display backlight, production capacity demand double growth in market can be predicted the interior LED of the five-year will cause tens of times of LED production capacity demands in the application popularization of illuminating industry lifting.
For the rapid growth trend of LED industry, the performance of LED production process equipment has also proposed new requirement, the laser scribing equipment of one of key equipment of producing as LED, and the requirement of its production efficiency is particularly urgent.Certainly the common practice that promotes production efficiency is to promote scribing speed, in fact the laser scribing means that is applied to the LED wafer has also experienced under under the early stage 10mm/s speed 3 slices/hour, mid-term 20mm/s speed 5 slices/hour, 8 slices/hour under the 70mm/s speed now, and the scribing speed simple as can be seen from the escalation process of laser scribing means increases more and more littler for the room for promotion of scribing efficient.Adopt the technical scheme of multi-beam parallel scribing in view of this puzzlement and can break through scribing improved efficiency bottleneck, realize scribing improved efficiency at double.
It is the new application technology that grew up in recent years that Laser Processing is applied to the scribing of LED wafer, at present external existing relevant application apparatus, and the Disco of the New Wave of the U.S., Laser Solution and Japan for example, but mainly be the single beam laser scribing.
In recent years, along with the development of Ultra-Violet Laser light source, the especially commercialization of semiconductor end pump ultraviolet laser above power of 5W under the 100kHz operating frequency makes the parallel scribing of single light source multiple beam beam split become possibility.
Summary of the invention
The purpose of this utility model is to overcome the deficiency that prior art exists, and a kind of New LED wafer tri-laser-beam scribing equipment is provided.
The purpose of this utility model is achieved through the following technical solutions:
A kind of New LED wafer tri-laser-beam scribing equipment, comprise laser instrument, processing platform and control system, characteristics are: the output of described laser instrument is provided with the optical gate that is used to control the laser break-make, the output of described optical gate is connected with and is used for the beam expanding lens that laser facula expands the adjusting of bundle multiplying power, the output of described beam expanding lens is furnished with first total reflective mirror, the linking of the first total reflective mirror output is useful on the laser beam splitting system that the single beam laser source is divided into three beams of laser, the output of described laser beam splitting system is provided with second total reflective mirror, described second total reflective mirror is connected focus lamp, and described focus lamp is right against processing platform; The laser of described laser emitting incides optical gate, laser impinges perpendicularly on beam expanding lens through optical gate, incide first total reflective mirror through the laser behind the beam expanding lens, incide the laser beam splitting system through the laser behind first total reflective mirror, the laser of the equal energy of laser beam splitting system output three beams equidimension, the three beams of laser of the equal energy of equidimension incides second total reflective mirror, three beams parallel laser behind the second total reflective mirror corner incides focus lamp, see through parallel the focusing on the processing platform of three beams of laser of focus lamp, three-beam on the processing platform surface is located along the same line, and middle beam of laser equates with the center distance of both sides laser.
Further, above-mentioned a kind of New LED wafer tri-laser-beam scribing equipment, wherein, the output of described beam expanding lens is furnished with first total reflective mirror, the first total reflective mirror speculum has that two dimension angular is regulated and along emergent light axis one dimension translational adjustment function, the output of described laser beam splitting system is provided with second total reflective mirror, and second total reflective mirror has along incident light axis one dimension translational adjustment function.
Further, above-mentioned a kind of New LED wafer tri-laser-beam scribing equipment, wherein, described focus lamp is installed on the one dimension straight-line motion mechanism that can move vertically, and described one dimension straight-line motion mechanism is connected with a motor-driven.
Again further, above-mentioned a kind of New LED wafer tri-laser-beam scribing equipment, wherein, the multiplying power adjustable range of described beam expanding lens is 8～15 times.
Again further, above-mentioned a kind of New LED wafer tri-laser-beam scribing equipment, wherein, described laser instrument is a semiconductor pump laser, the optical maser wavelength of output is 355nm.
The substantive distinguishing features of technical solutions of the utility model and progressive being mainly reflected in:
1. adopt succinct and the complete light path design of function, the light spot energy on control Laser Processing plane that can be convenient, flexible distributes, and adapts to the scribing of the LED wafer of different size;
2. adopt unique laser beam splitting system to realize the function of the parallel scribing of three light beams, the laser beam splitting system is with the three beams that is divided into of the equal power of Ultra-Violet Laser light source equidimension of Dan Shu, and three beams of laser is through the equally spaced processing platform surface that focuses on behind the focus lamp, three-beam scribing live width and degree of depth basically identical make scribing efficient promote at double;
3. regulate the angle on three beam Propagation planes by accurate electric rotating machine, be reflected in three focal beam spot lines in processing platform surface and processing platform motion X axis and Y-axis to angle, and then realize three focal beam spots processing platform X axis and Y-axis to the accurate control of spacing;
4. this equipment is better realized the parallel scribing of LED wafer three light beams, is widely used in the cutting of blue-ray LED wafer, satisfies LED wafer production production capacity demand.
Description of drawings
Below in conjunction with accompanying drawing technical solutions of the utility model are described further:
Fig. 1: the structural representation of the utility model system;
Fig. 2: the schematic diagram of the utility model laser optical path structure.
The implication of each Reference numeral sees the following form among the figure:
| Reference numeral | Implication | Reference numeral | Implication | Reference | Implication | |
| 1 | |
2 | The laser |
3 | Processing platform |
| Reference numeral | Implication | Reference numeral | Implication | Reference | Implication | |
| 4 | |
5 | |
6 | |
|
| 7 | First total reflective mirror | 8 | Second total |
9 | Focus lamp |
The specific embodiment
Design a kind of LED wafer tri-laser-beam scribing equipment, adopt succinct and the complete light path design of function, the light spot energy of laser be can control easily and flexibly, the scribing degree of depth and live width in the whole processing breadth under the prerequisite that guarantees cutting efficiency, stablized at processing plane; Adopt unique laser beam splitting system that the single beam laser source equal energy of equidimension is divided into the parallel processing platform that focuses on of three beams of laser, by the angle of accurate electric rotating machine control branch optical plane, and then the control three beams of laser focuses on the X-axis of processing platform and the spacing of Y direction.
Device systems as shown in Figure 1, mainly comprise laser instrument 1, laser beam splitting system 2, processing platform 3 and control system 4, the laser that sends from laser instrument 1 incides the laser beam splitting system 2, through laser beam splitting system 2 single beam laser source energy even is divided into that three beams of laser is parallel to focus on the processing platform 3.By laser beam splitting system 2 the single beam laser source is divided into the unidimensional three beams of laser of three beams constant power, three beams of laser is through the equally spaced processing platform that focuses on behind the focus lamp, and spectrum groupware has axial accurate electric rotating machine, realize that laser three light beams divide the precision of light direction and the processing platform X-axis or the Y-axis direction of motion to control, and then realize three light beams accurately adjustable continuously in processing platform X-axis or Y direction spacing.Control system 4 comprises motion control card and driver, and by the grating chi angulation position precise closed-loop control of motor internal, control system 4 is used for the Comprehensive Control of laser instrument, processing platform 3, laser beam splitting system 2.Between laser instrument 1 and the control system 4 by the RS232 serial communication, realize control system 4 to laser instrument 1 transfer control instruction and laser instrument 1 to control system 4 transferring status datas.Control system 4 sends the direction that pulse signal is controlled accurate electric rotating machine to laser beam splitting system 2, and the angle feedback of grating chi forms closed-loop control.Realize the motion closed-loop control by motion control card between processing platform 3 and the control system 4.
Laser optical path structure of the present utility model, as shown in Figure 2, comprise laser instrument 1, beam expanding lens 6, laser beam splitting system 2, focus lamp 9, processing platform 3 and control system 4, laser instrument 1 is a semiconductor pump laser, the optical maser wavelength of output is 355nm, the output of laser instrument 1 is provided with the optical gate 5 that is used to control the laser break-make, the output of optical gate 5 is connected with and is used for the beam expanding lens 6 that laser facula expands the adjusting of bundle multiplying power, the multiplying power adjustable range of beam expanding lens 6 is 8～15 times, the output of beam expanding lens 6 is furnished with first total reflective mirror 7, first total reflective mirror 7 has that two dimension angular is regulated and along emergent light axis one dimension translational adjustment function, the linking of first total reflective mirror, 7 outputs is useful on the laser beam splitting system 2 that the single beam laser source is divided into three beams of laser, the output of laser beam splitting system 2 is provided with second total reflective mirror 8, second total reflective mirror 8 has along incident light axis one dimension translational adjustment function, second total reflective mirror 8 is connected focus lamp 9, focus lamp 9 is installed on the one dimension straight-line motion mechanism that can move vertically, the one dimension straight-line motion mechanism is connected with a motor-driven, and focus lamp 9 is right against processing platform 3.
Need to prove, laser beam splitting system 2 comprises accurate electric rotating machine, accurate electric rotating machine has grating chi feedback function, the directional light that is divided into the equal energy of three beams equidimension after the single beam laser source process laser beam splitting system 2, and three-beam transmits in same plane, regulate accurate electric rotating machine angle then the transport plane of three light beams to equidirectional rotation with angle takes place correspondingly, after second total reflective mirror 8 and focus lamp 9,3 that focus on processing platform 3 surfaces are positioned on the same line, and the X axis of this line and processing platform 3 and Y-axis to angle change with accurate electric rotating machine angle and change.The equal energy of three beams of laser equidimension has identical Energy distribution through behind the focus lamp on the processing platform surface, and then determines that the line width and the degree of depth of three light beams are suitable.
Technical solutions of the utility model can be satisfied with and be realized the parallel scribing of LED wafer three light beams, significantly improve scribing efficient. Highlight following characteristics: 1) adopt succinct and the complete light path design of function, the spot energy distribution on control Laser Processing plane that can be convenient, flexible adapts to the scribing of the LED wafer of different size; 2) the unique laser beam splitting system of employing realizes the function of the parallel scribing of three light beams, so that scribing efficient promotes at double; 3) angle between the parallel three-beam of employing high technology ceramics Electric Machine Control and processing platform X-axis or the Y-axis, the control three-beam is adjustable at the continuous precision of X-axis and Y direction spacing, and this high technology ceramics motor is by the accurate positioning control of closed loop of high-resolution grating scale and driver, motion control card angulation position.
As fully visible, the utility model equipment can be widely used in the cutting of blue-ray LED wafer, satisfies LED wafer production production capacity demand, and economic benefit and social benefit are remarkable, and application prospect is very good.
What need to understand is: above-mentioned explanation is not to be to restriction of the present utility model, and in the utility model design scope, the interpolation of carrying out, conversion, replacement etc. also should belong to protection domain of the present utility model.
Claims (4)
1. New LED wafer tri-laser-beam scribing equipment, comprise laser instrument (1), processing platform (3) and control system (4), it is characterized in that: the output of described laser instrument (1) is provided with the optical gate (5) that is used to control the laser break-make, the output of described optical gate (5) is connected with and is used for the beam expanding lens (6) that laser facula expands the adjusting of bundle multiplying power, the output of described beam expanding lens (6) is furnished with first total reflective mirror (7), the linking of first total reflective mirror (7) output is useful on the laser beam splitting system (2) that the single beam laser source is divided into three beams of laser, the output of described laser beam splitting system (2) is provided with second total reflective mirror (8), described second total reflective mirror (8) is connected focus lamp (9), and described focus lamp (9) is right against processing platform (3); Described laser instrument (1) emitting laser impinges perpendicularly on beam expanding lens (6) through optical gate (5), laser behind beam expanding lens (6) incides first total reflective mirror (7), laser behind first total reflective mirror (7) incides laser beam splitting system (2), the laser of the equal energy of laser beam splitting system (2) output three beams equidimension, the three beams of laser of the equal energy of equidimension incides second total reflective mirror (8), three beams parallel laser behind second total reflective mirror (8) corner incides focus lamp (9), see through parallel the focusing on the processing platform (3) of three beams of laser of focus lamp (9), three-beam on the processing platform surface is located along the same line, and middle beam of laser equates with the center distance of both sides laser.
2. a kind of New LED wafer tri-laser-beam scribing equipment according to claim 1, it is characterized in that: described focus lamp (9) is installed on the one dimension straight-line motion mechanism that can move vertically, and described one dimension straight-line motion mechanism is connected with a motor-driven.
3. a kind of New LED wafer tri-laser-beam scribing equipment according to claim 1 is characterized in that: the multiplying power adjustable range of described beam expanding lens (6) is 8～15 times.
4. a kind of New LED wafer tri-laser-beam scribing equipment according to claim 1 is characterized in that: described laser instrument (1) is a semiconductor pump laser, and the optical maser wavelength of output is 355nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200920232540 CN201516540U (en) | 2009-09-16 | 2009-09-16 | Novel LED wafer three-beam laser scribing apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200920232540 CN201516540U (en) | 2009-09-16 | 2009-09-16 | Novel LED wafer three-beam laser scribing apparatus |
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| CN201516540U true CN201516540U (en) | 2010-06-30 |
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| CN 200920232540 Expired - Lifetime CN201516540U (en) | 2009-09-16 | 2009-09-16 | Novel LED wafer three-beam laser scribing apparatus |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102319960A (en) * | 2011-07-27 | 2012-01-18 | 苏州德龙激光有限公司 | Device and method for making metal film group holes by using ultra-short pulse laser |
| CN102672355A (en) * | 2012-05-18 | 2012-09-19 | 杭州士兰明芯科技有限公司 | Scribing method of LED (light-emitting diode) substrate |
| CN103495805A (en) * | 2013-09-27 | 2014-01-08 | 苏州德龙激光股份有限公司 | Laser point printing device |
| CN104801851A (en) * | 2015-03-31 | 2015-07-29 | 山西南烨立碁光电有限公司 | Silicon-based LED chip cutting method and optical splitter for cutting silicon-based LED chips |
| CN104858550A (en) * | 2015-05-28 | 2015-08-26 | 苏州德龙激光股份有限公司 | CO2 laser multi-beam high-speed slotting device for backlight source processing and method thereof |
| CN108500477A (en) * | 2018-03-29 | 2018-09-07 | 大族激光科技产业集团股份有限公司 | The cutting method and cutter device of LED wafer |
| CN108515273A (en) * | 2018-03-29 | 2018-09-11 | 大族激光科技产业集团股份有限公司 | The cutter device and cutting method of LED wafer |
| CN109317821A (en) * | 2017-07-24 | 2019-02-12 | 北京中科镭特电子有限公司 | A kind of laser welding system |
| CN109570760A (en) * | 2018-12-06 | 2019-04-05 | 浙江雷拉激光科技有限公司 | A kind of beam shaping welding system and method |
| CN112730433A (en) * | 2020-12-25 | 2021-04-30 | 中国工程物理研究院激光聚变研究中心 | Laser damage testing system and method |
-
2009
- 2009-09-16 CN CN 200920232540 patent/CN201516540U/en not_active Expired - Lifetime
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102319960A (en) * | 2011-07-27 | 2012-01-18 | 苏州德龙激光有限公司 | Device and method for making metal film group holes by using ultra-short pulse laser |
| CN102672355A (en) * | 2012-05-18 | 2012-09-19 | 杭州士兰明芯科技有限公司 | Scribing method of LED (light-emitting diode) substrate |
| CN102672355B (en) * | 2012-05-18 | 2015-05-13 | 杭州士兰明芯科技有限公司 | Scribing method of LED (light-emitting diode) substrate |
| CN103495805A (en) * | 2013-09-27 | 2014-01-08 | 苏州德龙激光股份有限公司 | Laser point printing device |
| CN104801851A (en) * | 2015-03-31 | 2015-07-29 | 山西南烨立碁光电有限公司 | Silicon-based LED chip cutting method and optical splitter for cutting silicon-based LED chips |
| CN104801851B (en) * | 2015-03-31 | 2019-01-18 | 山西南烨立碁光电有限公司 | Optical splitter is used in silicon substrate LED chip cutting method and its cutting |
| CN104858550A (en) * | 2015-05-28 | 2015-08-26 | 苏州德龙激光股份有限公司 | CO2 laser multi-beam high-speed slotting device for backlight source processing and method thereof |
| CN109317821A (en) * | 2017-07-24 | 2019-02-12 | 北京中科镭特电子有限公司 | A kind of laser welding system |
| CN108500477A (en) * | 2018-03-29 | 2018-09-07 | 大族激光科技产业集团股份有限公司 | The cutting method and cutter device of LED wafer |
| CN108515273A (en) * | 2018-03-29 | 2018-09-11 | 大族激光科技产业集团股份有限公司 | The cutter device and cutting method of LED wafer |
| CN109570760A (en) * | 2018-12-06 | 2019-04-05 | 浙江雷拉激光科技有限公司 | A kind of beam shaping welding system and method |
| CN112730433A (en) * | 2020-12-25 | 2021-04-30 | 中国工程物理研究院激光聚变研究中心 | Laser damage testing system and method |
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Address after: 215021 Suzhou Industrial Park, Jiangsu, Hong Zhong Road, No. 77 Patentee after: Suzhou Delphi Laser Co., Ltd. Address before: 215021 Suzhou Industrial Park, Jiangsu, Hong Zhong Road, No. 77 Patentee before: Suzhou Delphi Laser Co., Ltd. |
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Granted publication date: 20100630 |
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