CN102672355A - Scribing method of LED (light-emitting diode) substrate - Google Patents
Scribing method of LED (light-emitting diode) substrate Download PDFInfo
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- CN102672355A CN102672355A CN2012101603948A CN201210160394A CN102672355A CN 102672355 A CN102672355 A CN 102672355A CN 2012101603948 A CN2012101603948 A CN 2012101603948A CN 201210160394 A CN201210160394 A CN 201210160394A CN 102672355 A CN102672355 A CN 102672355A
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Abstract
The invention provides a scribing method of an LED (light-emitting diode) substrate. The scribing method comprises the following steps of: providing an LED substrate, wherein the LED substrate comprises a substrate and an epitaxial layer positioned on the substrate; focusing femtosecond pulse laser to a linear light spot by adopting a femtosecond laser system, wherein the linear light spot is focused on the substrate surface of the LED substrate and the length is larger than or equal to the diameter of the LED substrate; scanning the substrate by adopting the linear light spot and forming a plurality of mutually parallel first grooves on the substrate surface; and rescanning the substrate by adopting the linear light spot and forming a plurality of mutually parallel second grooves on the substrate surface, wherein the extension directions of the second grooves and the first grooves are vertical. With the adoption of the scribing method, thermal damage to the LED substrate can be avoided in the scribing process, and the scribing efficiency is helped to be improved.
Description
Technical field
The present invention relates to a kind of dicing method of LED substrate, relate in particular to a kind of method of using femtosecond laser the LED substrate to be carried out scribing.
Background technology
As everyone knows, the LED wafer is on sapphire or silicon carbide substrates, to adopt the light-emitting active layer of the method growth of vapour deposition based on gallium nitride based material, and general LED wafer size is 2 inches ~ 4 inches at present.The reduction of the development of LED industry, LED price and the lifting of luminous efficiency have driven popularizing of led chip, thereby have also driven the central various technology in LED field that are applied to.
In the process of led chip, at first to carry out attenuate to the LED substrate, in order before using encapsulation, each led chip being separated, also need to mark groove, thereby be convenient to the sliver of LED wafer the LED substrate back behind the attenuate.Dicing method commonly used comprises that early stage diamond stage property cuts to the pulse laser line cutting of at present generally popular ultraviolet nanosecond order.But the major issue that laser scribing exists is, the too high laser energy of along causes fire damage in the scribing processes, thereby causes near the crackle diffusion the scribing, perhaps the luminous efficiency reduction that causes of hot melt phenomenon etc.The problem of another one laser scribing is exactly a scribing efficient, and from early stage 3 slices/hour 10 slices/hour of main flow up till now, the speed of scribing efficient becomes the core competition factor of laser scribing means.
Summary of the invention
The technical problem that the present invention will solve provides a kind of dicing method of LED substrate, can avoid the fire damage that in the scribing processes LED substrate caused, and help improving scribing efficient.
For solving the problems of the technologies described above, the invention provides a kind of dicing method of LED substrate, comprising:
LED is provided substrate, and said LED substrate comprises substrate and is positioned at the epitaxial loayer on the said substrate;
Adopt fs-laser system that femtosecond pulse is focused to the wire hot spot, said wire hot spot focus on the substrate surface in the said LED substrate and its length more than or equal to the diameter of said LED substrate;
Adopt said wire hot spot that said substrate is scanned, to form a plurality of first grooves that are parallel to each other at said substrate surface;
Adopt said wire hot spot that said substrate is carried out rescan, to form a plurality of second grooves that are parallel to each other at said substrate surface, said second groove is vertical with the bearing of trend of first groove.
Alternatively, said fs-laser system comprises:
Femtosecond pulse seed laser source;
Laser amplifies parallel beam expand device, and the femtosecond pulse that said femtosecond pulse seed laser source is sent carries out the energy amplification, expands bundle and line focus, exports said wire hot spot;
Load bearing component is used to carry said LED substrate, and wherein, said epitaxial loayer is towards said load bearing component.
Alternatively, said laser amplification parallel beam expand device comprises:
Laser amplifier carries out energy to said femtosecond pulse and amplifies;
The extender lens composite set expands bundle to the laser beam from said laser amplifier, makes its size cover said LED substrate;
The post lens carry out line focus to the laser beam from said extender lens composite set, export said wire hot spot.
Alternatively, said laser amplifier is enlarged into said femtosecond pulse the laser beam of mJ ~ J magnitude.
Alternatively, said laser amplification parallel beam expand device also comprises:
Optical gate, the laser beam of said laser amplifier output transfers to said extender lens composite set through behind the said optical gate.
Alternatively, said fs-laser system also comprises:
Stepper motor; Driving said load bearing component drives said LED substrate and moves along the direction perpendicular to said wire hot spot; Said LED substrate is divided into multistep on the direction perpendicular to said wire hot spot, said stepper motor drives said LED substrate and progressively moves so that said wire hot spot progressively scans said LED substrate.
Alternatively, said fs-laser system also comprises:
Isochronous controller carries out Synchronization Control to said stepper motor and optical gate, and the laser pulse number that exposes on the said LED substrate after said stepper motor whenever being moved move a step is identical.
Alternatively; Said extender lens composite set comprises first bull's-eye and second bull's-eye; See through outgoing behind said first bull's-eye and second bull's-eye successively from the laser beam of said laser amplifier; Wherein the focal length of first bull's-eye is less than the focal length of second bull's-eye, and the distance between said first bull's-eye and second bull's-eye equals the focal length sum of the two.
Alternatively, said fs-laser system also comprises:
Governor motion is used for driving each convex lens translation of said post lens and extender lens composite set, and the direction edge of translation is from the direction of propagation of the laser beam of said laser amplifier.
Alternatively, said laser amplifier comprises: Glan prism, faraday isolator, half-wave plate, laserresonator, pump laser, wherein,
The femtosecond pulse that send in said femtosecond pulse seed laser source sees through the side that said faraday isolator and half-wave plate get into said laserresonator after reflecting through said Glan prism successively;
The pumping laser that said pump laser sends gets into the opposite side of said laserresonator;
The laser beam that the process energy that said laserresonator sends amplifies is successively through outgoing behind said half-wave plate, faraday isolator and the Glan prism.
Alternatively, said laserresonator comprises: be positioned at first speculum of said laserresonator one side, be positioned at concave mirror, titanium sapphire crystal, film polarizer, the Pockers cell of said laserresonator opposite side, wherein,
The pumping laser that said pump laser sends sees through said concave mirror and gets into said titanium sapphire crystal;
The femtosecond pulse of said half-wave plate outgoing sees through said Pockers cell via said film polarizer reflection back and is incident to said first speculum; The femtosecond pulse that said first mirror reflects goes out gets into said titanium sapphire crystal after seeing through said Pockers cell and film polarizer, and said femtosecond pulse and the pumping laser hot spot in said titanium sapphire crystal overlaps.
Alternatively, adopt said wire hot spot that said substrate is carried out rescan and comprise: keep the bearing of trend of said wire hot spot constant,, adopt said wire hot spot that said substrate is carried out rescan afterwards said LED substrate half-twist.
Alternatively, also be provided with diaphragm between said load bearing component and the epitaxial loayer.
Alternatively, the peak power of said wire hot spot is 10
12~ 10
15W.
Compared with prior art, the present invention has the following advantages:
In the dicing method of the LED substrate of the embodiment of the invention; Femtosecond pulse is focused to the wire hot spot; This wire hot spot focuses on the substrate surface of LED substrate; Adopt this wire hot spot that substrate is carried out on substrate surface, having formed orthogonal first groove and second groove respectively after twice scanning.Since burst length of femtosecond laser be 1,000,000 of the common nanosecond laser pulses time/; Be far smaller than the time that heat that laser produces is delivered to lattice; Therefore can thoroughly eliminate of the influence of the fire damage that interaction produced of laser and LED backing material, and help enhancing productivity the LED substrate.
Description of drawings
Fig. 1 is the schematic flow sheet of dicing method of the LED substrate of the embodiment of the invention;
Fig. 2 is the structured flowchart of the fs-laser system of the embodiment of the invention;
Fig. 3 is the detailed structure view of the laser amplifier among Fig. 2;
Fig. 4 is the profile that is positioned over the LED substrate on the load bearing component in the embodiment of the invention;
Fig. 5 is the vertical view that passes through the later LED substrate of scribing in the embodiment of the invention;
Fig. 6 is the profile that passes through the later LED substrate of scribing in the embodiment of the invention.
The specific embodiment
Below in conjunction with specific embodiment and accompanying drawing the present invention is described further, but should limit protection scope of the present invention with this.
Fig. 1 shows the flow chart of dicing method of the LED substrate of present embodiment, comprising:
Step S11 provides LED substrate, and said LED substrate comprises substrate and is positioned at the epitaxial loayer on the said substrate;
Step S12 adopts fs-laser system that femtosecond pulse is focused to the wire hot spot, said wire hot spot focus on the substrate surface in the said LED substrate and its length more than or equal to the diameter of said LED substrate;
Step S13 adopts said wire hot spot that said substrate is scanned, to form a plurality of first grooves that are parallel to each other at said substrate surface;
Step S14 adopts said wire hot spot that said substrate is carried out rescan, and to form a plurality of second grooves that are parallel to each other at said substrate surface, said second groove is vertical with the bearing of trend of first groove.
Fig. 2 shows the fs-laser system that present embodiment adopts, and comprising: femtosecond pulse seed laser source 12, laser amplify parallel beam expand device (comprising laser amplifier 20, optical gate 21, extender lens composite set, post lens 11), load bearing component 8, isochronous controller 22.
Wherein, femtosecond pulse seed laser source 12 is used to send femtosecond pulse.As a nonrestrictive example; Femtosecond pulse seed laser source 12 in the present embodiment can be realized by the optical fiber femtosecond laser of locked mode; Concrete parameter is following: pulse width is between 20 ~ 150fs, centre wavelength 800nm, and repetition rate is 20 ~ 80MHz; Pulse energy is between nJ ~ μ J magnitude, and the circular light spot diameter that is sent is 5mm ~ 10mm.
The femtosecond pulse that send in femtosecond pulse seed laser source 12 is successively through being incident to the LED substrate on the load bearing component 8 behind laser amplifier 20, optical gate 21, first convex lens 9 and second convex lens 10, the post lens 11.This LED substrate comprises the substrate 100 and epitaxial loayer 101 that piles up in the present embodiment; Wherein epitaxial loayer 101 is towards load bearing component 8; Substrate 100 is towards the direction of femtosecond pulse incident; Can also be provided with diaphragm 102 between epitaxial loayer 101 and the load bearing component 8, to prevent externally to prolong the damage of layer 101.
As shown in Figure 2, present embodiment is defined as the x-y plane with the plane at LED substrate surface (more specifically for carrying out the surface of scribing operation on the substrate 100) place, and the direction that femtosecond pulse is propagated is defined as the z direction, and the z direction is perpendicular to the x-y plane.
Laser amplifies parallel beam expand device and is used for femtosecond pulse is carried out the energy amplification, expands bundle and line focus, the output line shaped laser spot, and the length of this wire hot spot is more than or equal to the diameter of LED substrate.In the present embodiment, this laser amplifies parallel beam expand device and comprises: laser amplifier 20, carry out energy to femtosecond pulse and amplify; The extender lens composite set expands bundle to the laser beam from laser amplifier, makes its size can cover the whole LED substrate; Post lens 11 carry out line focus to the laser beam from the extender lens composite set, the output line shaped laser spot.In addition, this laser amplifies parallel beam expand device and also comprises: optical gate 21, and the laser beam of laser amplifier 20 outputs transfers to the extender lens composite set through behind the optical gate, and the switching of optical gate 21 can be controlled whether outgoing of laser beam.
Wherein, The extender lens composite set comprises first bull's-eye 9 and second bull's-eye 10; Laser beam sees through first bull's- eye 9 and 10 outgoing afterwards of second bull's-eye successively; Wherein the focal length 9 of first bull's-eye is less than the focal length of second bull's-eye 10, and the distance between first bull's-eye 9 and second bull's-eye 10 equals the focal length sum of the two.More specifically; The focal length of second bull's-eye 10 is 5 ~ 10 times of focal length of first bull's-eye 9; Make hot spot be extended to and to cover the whole LED substrate that for example for 2 cun LED substrate, the diameter that expands the laser beam after restrainting is 60mm from original size 5mm ~ 10mm; For 4 cun or larger sized epitaxial wafer, can use the combination of more group bull's-eyes to come continuous expansion of laser light spot size.The fs-laser system of present embodiment also comprises the governor motion (not shown in figure 1); Can regulate first bull's-eye 9 and second bull's-eye 10 position, promptly can drive the direction translation that first bull's-eye 9 and second bull's-eye 10 are propagated along laser beam along optical axis.
Expand the laser beam process post lens 11 after restrainting, laser beam is carried out line focus, hot spot is compressed at x or a certain single direction of y, form the wire hot spot.In addition, the adjustment structure in the present embodiment also can be carried out translation by coupled columns lens 11, thereby with predetermined zone in focal position adjustment to the LED substrate of wire hot spot, for example the LED substrate surface is perhaps inner.Owing to before carried out expanding bundle, thereby the length of the wire hot spot of post lens 11 outgoing is equal to, or greater than the diameter of LED substrate.
In the present embodiment, load bearing component 8 is driven by stepper motor (not shown among Fig. 2), can drive the LED substrate and move along the direction perpendicular to the wire hot spot, for example moves along x direction or y direction.For example, can the LED substrate be divided into multistep on the direction perpendicular to the wire hot spot, stepper motor drives the LED substrate and progressively moves, so that said wire hot spot progressively scans the whole LED substrate.
In addition; Step motor control whole LED substrate carries out the scanning of one dimension direction on perpendicular to the direction of wire hot spot in the present embodiment; Finally reach the purpose of processing whole LED substrate; Such scan mode is compared with the lattice array scanning repeatedly of routine, has shortened process time greatly, has improved production efficiency.
The femtosecond pulse that send in femtosecond pulse seed laser source 12 reflexes to Glan prism 35 through speculum 36; Again through seeing through faraday isolator 34 and half-wave plate 33 successively after Glan prism 35 reflections; Get into laserresonator after the reflection through speculum 32 and 28 afterwards; In laserresonator,, see through Pockers cell 30 backs by first speculum 31 reflected back Pockers cell 30 once more through getting into Pockers cell 30 after the reflection of film polarizer 29; See through Pockers cell 30 backs and be transmitted to speculum 27, through the reflection entering titanium sapphire crystal 25 of speculum 27, speculum 26 through film polarizer 29.On the other hand; The pumping laser that pump laser 40 sends is through behind the convex lens 41; Get into laserresonator by speculum 23 reflections; Get into titanium sapphire crystal 25 after in laserresonator, seeing through concave mirror 24, the hot spot that pumping laser and femtosecond pulse form on titanium sapphire crystal 25 overlaps.
When the femtosecond pulse that send in femtosecond pulse seed laser source 12 passes through laser amplifier, through the energy of continuous absorptive pumping laser instrument 40, make the optical pulse energy of femtosecond pulse reach the mJ-J magnitude from the nJ-uJ magnitude, repetition rate is 1kHz.The concrete course of work of laser amplifier is: the femtosecond pulse that is at first sent by femtosecond pulse seed laser source 12 gets in the laser amplifier through plane mirror 36 reflections.In laser amplifier; Pump laser 40 sends the pumping laser that wavelength is 527nm; Pumping laser gets into speculum 23 through convex lens 41 and amplifies resonator, and the both sides of this amplification resonator are respectively the concave mirror 24 and first speculum 31, and the interacvity gain material is a titanium sapphire crystal 25.At first, the energy centralization of pumping laser makes it reach population inversion on titanium sapphire crystal 25, forms the precondition that femtosecond pulse is exaggerated.In addition; Femtosecond pulse by speculum 36 reflections reflects through Glan prism 35; See through faraday isolator 34 and half-wave plate 33; The mirror 32 and 28 that is reflected reflects and gets into laserresonators, and femtosecond pulse is continuous through on the titanium sapphire crystal 25 that is in the population inversion state through vibration in laserresonator, makes the pulse energy of femtosecond pulse constantly obtain amplification.And, Pockers cell 30 and film polarizer 29 are installed in laserresonator, make laserresonator be in the q-operation state; Make femtosecond pulse be in the P polarization state when in laserresonator, vibrating, when changing the voltage of Pockers cell 30, the polarization state of femtosecond pulse changes the S polarization into; Thereby reflexed to outside the laserresonator by film polarizer 29; By speculum 28 and 32 reflections, make it again, regulate half-wave plate 33 and make output laser change the P polarization into by the S polarization once more through half-wave plate 33 and faraday isolator 34; Be the laser beam of mJ-J by Glan prism 35 transmissions output energy at last, its repetition rate is 1KHz.This laser beam is through after post lens 11 line focus, and the peak power of the wire hot spot of along is 10
12~ 10
15W.
The laser of the fs-laser system that present embodiment provides through the high instantaneous energy broad stopband LED backing material that gasifies; Detailed process is: the femtosecond pulse that the process laser amplifier amplifies is in the focusing through the post lens; Its instantaneous energy reaches exponential increase; The online shaped laser spot of material place can produce violent nonlinear effect; Thereby produce the multi-photon absorption process, that is to say that at the laser spot place material substance can absorb a plurality of photon energies at synchronization; Thereby make to absorb the photon energy (for example femtosecond laser is usually located at near-infrared light waves) of visible light wave range, thereby reach the purpose of decomposing backing material for the broad stopband material (for example sapphire) of visible transparent.Such process has greatly been eliminated in the Laser Processing, and material is to the selectivity of wavelength, and the zone of flexible greatly laser processing of materials is selected.And; In the femtosecond laser processing LED substrate process; Backing material is accomplished in the time at femtosecond the absorption process of pulsed laser energy, is far smaller than the time (being generally picosecond magnitude) that heat that laser produces is delivered to lattice, has therefore eliminated the fuel factor of the interaction generation of laser and material; Thereby thoroughly eliminated the influence of fire damage to epitaxial loayer, the pattern quality in Laser Processing zone also is improved in addition.
Fig. 4 is the profile that is positioned over the LED substrate on the load bearing component 8; Fig. 5 is the vertical view through the later LED substrate of scribing; Fig. 6 is the profile of the LED substrate after the scribing, below in conjunction with Fig. 2 and Fig. 4 to Fig. 6 the dicing method of the LED substrate of present embodiment is described in detail.
The LED substrate at first is provided, and this LED substrate comprises substrate 100 and is positioned at the epitaxial loayer 101 on the substrate 100.
Afterwards this LED substrate is prevented on load bearing component 8 that the epitaxial loayer 101 in this LED substrate is towards load bearing component 8, substrate 100 is towards the direction of laser incident.In the present embodiment, between load bearing component 8 and epitaxial loayer 101, also be provided with diaphragm 102.For example can epitaxial loayer 101 be sticked on the diaphragm 102, be placed on again on the load bearing component 8 afterwards.
Next, the wire hot spot that laser is amplified parallel beam expand device output focuses on substrate 100 surfaces.Particularly; Along on the light path of laser propagation; Adjust the position of first bull's-eye 9 and second bull's-eye 10; Make the second bull's-eye emitting laser bundle through collimation, the prototype spot size that it sends can cover entire substrate 100 greatly from green diameter 5mm ~ 10mm expansion.Certainly; In other specific embodiments; If still less than the size of LED substrate, can continue to increase one or more groups bull's-eye combination in the back of second bull's-eye 10 and come constantly to enlarge spot size along on the light path direction of propagation so through one group of bull's-eye combination back spot size; Until covering the whole LED substrate, the laser beam that guarantees to see through last round lens through the horizontal level of regulating each bull's-eye simultaneously is through collimation.See through post lens 11 and carry out line focus from process expansion bundle, the collimated laser light bundle of 10 outgoing of second bull's-eye; Make focus through adjustment post lens 11 on substrate 100 surfaces along the position of light path, the length of the wire hot spot after the focusing is more than or equal to the diameter of LED substrate.
Drive load bearing component 8 afterwards along perpendicular to the direction of wire hot spot motion scan progressively, on substrate 100 surfaces, form a plurality of first grooves that are parallel to each other.Particularly, can programme, make its Synchronization Control stepper motor and optical gate 21, also promptly set the time for exposure of optical gate 21 and time that stepper motor rests on each scanning step and be preset time, for example 5ms ~ 10ms isochronous controller 22.Set the scan mode of stepper motor, the edge, scanning direction of control load bearing component 8 is perpendicular to wire hot spot direction, also promptly along x direction (if the wire hot spot is along y direction) or y direction (if the wire hot spot is along y direction) run-down.
Rotate the whole LED substrate afterwards; For example make the bearing of trend of the bearing of trend of the groove of winning behind the half-twist perpendicular to the wire hot spot; And drive load bearing component 8 along carrying out rescan perpendicular to the direction of wire hot spot; On substrate 100 surfaces, form a plurality of second grooves, second groove is vertical with the bearing of trend of first groove, forms network structure as shown in Figure 5.The compensation of above-mentioned twice scanning can be set according to the die size of different size, forms first groove and second groove of netted intersection, is convenient to follow-up chip separation process.
In the prior art, the burst length that the nanosecond laser of LED substrate is processed in traditional being used to is to be fixed on nanosecond (10-
6S) magnitude, the pulse energy of output are the mJ-J magnitudes, even the mode that scioptics focus on, the peak power of along also is merely megawatt (10
6W) magnitude is difficult to reach the threshold value of sapphire material nonlinear effect, and sapphire material can't the efficient absorption laser energy, therefore is difficult to effective gasification sapphire material and reaches the purpose of process substrate.On the other hand; The desired laser energy threshold value that gasifies forms groove on substrate even the output energy of pulse through continuous increase laser instrument satisfies sapphire material; A shortcoming at first is that excessive laser pulse is exported energy with matter interaction the time; Strong stress diffusion can be produced, epitaxial loayer can be had a strong impact on.In addition, because the burst length of nanosecond laser is longer, itself just is accompanied by fire damage in the rapidoprint process, and excessive laser pulse output energy can make that this fire damage is more serious, can destroy the epitaxial loayer of whole LED substrate.
And in the present embodiment, the laser beam energy of laser amplifier 20 output is similarly mJ ~ J magnitude, has avoided the excessive negative effect of laser pulse output energy, behind line focus, is 10 in the peak power of along
12~ 10
15The W magnitude, such peak power is easy to reach the energy threshold of sapphire material, reaches the purpose of processing Sapphire Substrate.Simultaneously since the burst length of femtosecond laser be far smaller than the burst length of nanosecond laser; The time that this means laser and matter interaction is far smaller than the time that heat that laser and matter interaction produce is delivered to the material lattice; Therefore in processing Sapphire Substrate process, can eliminate the influence of fire damage to epitaxial loayer.
Need to prove; Before substrate 100 is carried out scribing; Can also carry out attenuate and leveling to substrate 100; The process of attenuate also can adopt fs-laser system shown in Figure 2 to accomplish, and for example the wire hot spot is focused on behind substrate 100 inside and scans along the direction perpendicular to the wire hot spot.
In addition, the backing material in the present embodiment in the LED substrate is a sapphire, but can also be carborundum, aluminium oxide, gallium nitride, zinc oxide etc. in other specific embodiments.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (14)
1. the dicing method of a LED substrate is characterized in that, comprising:
LED is provided substrate, and said LED substrate comprises substrate and is positioned at the epitaxial loayer on the said substrate;
Adopt fs-laser system that femtosecond pulse is focused to the wire hot spot, said wire hot spot focus on the substrate surface in the said LED substrate and its length more than or equal to the diameter of said LED substrate;
Adopt said wire hot spot that said substrate is scanned, to form a plurality of first grooves that are parallel to each other at said substrate surface;
Adopt said wire hot spot that said substrate is carried out rescan, to form a plurality of second grooves that are parallel to each other at said substrate surface, said second groove is vertical with the bearing of trend of first groove.
2. the dicing method of LED substrate according to claim 1 is characterized in that, said fs-laser system comprises:
Femtosecond pulse seed laser source;
Laser amplifies parallel beam expand device, and the femtosecond pulse that said femtosecond pulse seed laser source is sent carries out the energy amplification, expands bundle and line focus, exports said wire hot spot;
Load bearing component is used to carry said LED substrate, and wherein, said epitaxial loayer is towards said load bearing component.
3. the dicing method of LED substrate according to claim 2 is characterized in that, said laser amplifies parallel beam expand device and comprises:
Laser amplifier carries out energy to said femtosecond pulse and amplifies;
The extender lens composite set expands bundle to the laser beam from said laser amplifier, makes its size cover said LED substrate;
The post lens carry out line focus to the laser beam from said extender lens composite set, export said wire hot spot.
4. the dicing method of LED substrate according to claim 3 is characterized in that, said laser amplifier is enlarged into said femtosecond pulse the laser beam of mJ ~ J magnitude.
5. the dicing method of LED substrate according to claim 4 is characterized in that, said laser amplifies parallel beam expand device and also comprises:
Optical gate, the laser beam of said laser amplifier output transfers to said extender lens composite set through behind the said optical gate.
6. the dicing method of LED substrate according to claim 5 is characterized in that, said fs-laser system also comprises:
Stepper motor; Driving said load bearing component drives said LED substrate and moves along the direction perpendicular to said wire hot spot; Said LED substrate is divided into multistep on the direction perpendicular to said wire hot spot, said stepper motor drives said LED substrate and progressively moves so that said wire hot spot progressively scans said LED substrate.
7. the dicing method of LED substrate according to claim 6 is characterized in that, said fs-laser system also comprises:
Isochronous controller carries out Synchronization Control to said stepper motor and optical gate, and the laser pulse number that exposes on the said LED substrate after said stepper motor whenever being moved move a step is identical.
8. the dicing method of LED substrate according to claim 3; It is characterized in that; Said extender lens composite set comprises first bull's-eye and second bull's-eye; See through outgoing behind said first bull's-eye and second bull's-eye successively from the laser beam of said laser amplifier, wherein the focal length of first bull's-eye is less than the focal length of second bull's-eye, and the distance between said first bull's-eye and second bull's-eye equals the focal length sum of the two.
9. the dicing method of LED substrate according to claim 8 is characterized in that, said fs-laser system also comprises:
Governor motion is used for driving each convex lens translation of said post lens and extender lens composite set, and the direction edge of translation is from the direction of propagation of the laser beam of said laser amplifier.
10. the dicing method of LED substrate according to claim 3 is characterized in that, said laser amplifier comprises: Glan prism, faraday isolator, half-wave plate, laserresonator, pump laser, wherein,
The femtosecond pulse that send in said femtosecond pulse seed laser source sees through the side that said faraday isolator and half-wave plate get into said laserresonator after reflecting through said Glan prism successively;
The pumping laser that said pump laser sends gets into the opposite side of said laserresonator;
The laser beam that the process energy that said laserresonator sends amplifies is successively through outgoing behind said half-wave plate, faraday isolator and the Glan prism.
11. the dicing method of LED substrate according to claim 10; It is characterized in that; Said laserresonator comprises: first speculum that is positioned at said laserresonator one side; Be positioned at concave mirror, titanium sapphire crystal, film polarizer, the Pockers cell of said laserresonator opposite side, wherein
The pumping laser that said pump laser sends sees through said concave mirror and gets into said titanium sapphire crystal;
The femtosecond pulse of said half-wave plate outgoing sees through said Pockers cell via said film polarizer reflection back and is incident to said first speculum; The femtosecond pulse that said first mirror reflects goes out gets into said titanium sapphire crystal after seeing through said Pockers cell and film polarizer, and said femtosecond pulse and the pumping laser hot spot in said titanium sapphire crystal overlaps.
12. the dicing method of LED substrate according to claim 1; It is characterized in that; Adopting said wire hot spot that said substrate is carried out rescan comprises: keep the bearing of trend of said wire hot spot constant; With said LED substrate half-twist, adopt said wire hot spot that said substrate is carried out rescan afterwards.
13. the dicing method of LED substrate according to claim 2 is characterized in that, also is provided with diaphragm between said load bearing component and the epitaxial loayer.
14. the dicing method according to each described LED substrate in the claim 1 to 13 is characterized in that, the peak power of said wire hot spot is 10
12~ 10
15W.
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