CN101318264A - Design method for ultraviolet laser machining apparatus for cutting wafer - Google Patents

Design method for ultraviolet laser machining apparatus for cutting wafer Download PDF

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Publication number
CN101318264A
CN101318264A CN 200810124267 CN200810124267A CN101318264A CN 101318264 A CN101318264 A CN 101318264A CN 200810124267 CN200810124267 CN 200810124267 CN 200810124267 A CN200810124267 A CN 200810124267A CN 101318264 A CN101318264 A CN 101318264A
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laser
speculum
processing platform
cutting
optical
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CN101318264B (en
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赵裕兴
徐海宾
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Jiangyin Deli Laser Equipment Co., Ltd.
Suzhou Delphi Laser Co Ltd
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JIANGYIN DEFEI LASER EQUIPMENT CO Ltd
Suzhou Delphi Laser Co Ltd
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Abstract

The invention relates to a design method for ultraviolet laser processing equipment used in the wafer cutting; lasers emitted by an ultraviolet laser are injected to a laser transmission system which can vertically inject focus spots with high energy density to a processing platform; the laser energy distribution focused on the surface of the processing platform is controlled by adjusting optical components in the laser transmission system; the wafer that is about to be processed is positioned and the cutting tracks are planned by an optical image system before the laser cutting; a laser optical axis keeps still and the processing platform carries out the linear motions along an X axis and a Y axis during the laser processing; an industrial computer conveys control instructions to the laser while the laser conveys state information to the industrial computer, and the optical image system transmits the taken image information of the work piece surface to the industrial computer to carry out the image processing. The design method adopts an optical path design with simple and complete functions, controls the spot energy distribution of the laser processing platform conveniently and flexibly and can be applied to the semi-conductor wafer sheet cutting of a plurality of materials and specifications.

Description

The method for designing that is used for the ultraviolet laser machining apparatus of wafer cutting
Technical field
The present invention relates to a kind of laser cutting device, relate in particular to a kind of method for designing that is used for the high-accuracy process equipment of Ultra-Violet Laser of semiconductor crystal wafer cutting.
Background technology
Semiconductor crystal wafer adopts the method growing semiconductor material of vapour deposition often on the similar base material of lattice, need some inches wafer is cut into the crystal grain of smaller szie before the encapsulation of semiconductor devices terminal applies.Traditional wafer cutting is to adopt mechanical system processing such as emery wheel, diamond tool, yet the machining mode exist process velocity slow, cut the wide shortcoming of the line of rabbet joint, especially when cutting as the scleroid base material of sapphire, machine cuts efficient is low, expense is high, the wafer that cuts 2 inches is generally 1～2 slice/hour, and each diamond blade only can be cut 2～3.
Along with the development of semicon industry, the kind of semiconductor crystal wafer is also more and more, and this has just proposed new requirement to the cutting of wafer.The Ultra-Violet Laser cutting technique is the Ultra-Violet Laser non-contact laser cold processing technique that adopts 355nm or other short wavelength, has beam quality height (M 2＜1.2), ((＜20ns) characteristics almost can realize the cutting to all materials to the pulse frequency height for 50kHz～150kHz), pulse width.The outstanding focusing power of Ultra-Violet Laser is easy to realize the cutting live width less than 10um in addition, compares with the cutting live width more than the traditional machine cuts 30um, and accurate cutting aspect has remarkable advantages.
It is a kind of new technique for applying that the Ultra-Violet Laser cutting is applied to semiconductor crystal wafer, external at present existing relevant application apparatus, the Disco of the New Wave of the U.S., Laser Solution and Japan for example, but their equipment is mainly used in the wafer cutting of GaN sapphire substrate.
Nowadays semiconductor chip is more paid close attention to the heat dissipation problem of chip, so the base material of wafer trends towards selecting for use SiC or metal material, and the variation of base material has proposed new requirement to laser cutting device.
Therefore,, study a kind of laser process equipment that can be applicable to cutting various material specification wafer, have great practical significance in order to satisfy the development need of semicon industry.
Summary of the invention
The purpose of this invention is to provide a kind of method for designing of wafer Ultra-Violet Laser cutting equipment, the cutting equipment of being developed can be applicable to the cutting processing of the wafer of various material specification preferably.
Purpose of the present invention is achieved through the following technical solutions:
The method for designing that is used for the ultraviolet laser machining apparatus of wafer cutting, characteristics are: described ultraviolet laser machining apparatus comprises ultraviolet laser, transmission laser system, processing platform, optical imagery system and industrial computer, sending laser by ultraviolet laser incides in the transmission laser system, transmission laser system impinges perpendicularly on the focal beam spot of high-energy-density on the processing platform, control the laser energy distribution that focuses on the processing platform surface by the optical component of regulating in the transmission laser system, by the optical imagery system wafer to be processed is positioned before the laser cutting and the planning of cutting track, during laser cutting laser beam axis keep motionless and processing platform with respect to optical axis at X, two axial linear movement of Y; Described ultraviolet laser communicates by RS232 serial ports and industrial computer, and industrial computer is to the ultraviolet laser transfer control instruction, and ultraviolet laser is to the industrial computer transferring status data; The optical imagery system is sent to industrial computer to the surface of the work image information of absorbing by image pick-up card and carries out the image processing on processing platform, workpiece is accurately cut the location, and detect the line of cut track in real time; Carry out the motion closed-loop control by motion control card between processing platform and the industrial computer.
Further, the method for designing of the above-mentioned ultraviolet laser machining apparatus that is used for the wafer cutting, described transmission laser system comprises optical gate, beam expanding lens, first speculum, second speculum and focus lamp;
Described optical imagery system comprises a CCD, the 2nd CCD, the 3rd CCD, first lighting source and second lighting source;
Described processing platform comprises marble base station, X-axis line slideway, Y-axis line slideway, R axle electric rotating machine and suprasil table top;
Wherein, the laser that ultraviolet laser penetrates incides optical gate, the break-make of optical gate control laser, and the laser vertical that penetrates through optical gate incides beam expanding lens, the Energy distribution of beam expanding lens control focal beam spot; The laser of beam expanding lens output incides 45 ° of first speculum earlier, reenters and is mapped to 45 ° of second speculum, and first speculum carries out 45 ° to ultraviolet 355nm laser and is all-trans, and second speculum carries out 45 ° to ultraviolet 355nm laser and is all-trans and anti-reflection to 45 ° of illumination light; Laser vertical behind the second speculum corner incides focus lamp, focus lamp is installed on the motor of vertical line lifting, by the Energy distribution of the distance adjustment processing plane focal beam spot between control focus lamp and the processing platform, the laser that sees through focus lamp focuses on the surface of processing platform;
Wherein, the optical axis of the first lighting source bright dipping is consistent with the optical axis that laser vertical incides processing platform, and the light that first lighting source penetrates sees through the 4th speculum, the 3rd speculum, second speculum and focus lamp successively, shines on the processing platform then; After the light of workpiece surface reflection on the processing platform passes through focus lamp, second speculum, the 3rd speculum, the 4th speculum successively, incide a CCD and the 2nd CCD respectively, wherein a CCD accurately locatees workpiece front small breadth, and the 2nd CCD is to the edge identification of large format; The optical axis of the second lighting source bright dipping is consistent with the optical axis that laser vertical incides processing platform, second lighting source lower surface that impinges perpendicularly on workpiece on the processing platform from bottom to top, light through the reflection of workpiece lower surface turns back to the 3rd CCD, and the 3rd CCD accurately locatees the workpiece lower surface;
Wherein, the X-axis line slideway is installed on the marble base station with the Y-axis line slideway is vertical relatively, and X-axis line slideway and Y-axis line slideway all have high-resolution grating chi; R axle electric rotating machine is installed on the Y-axis line slideway; The suprasil table top is installed on the R axle electric rotating machine.
Further, the method for designing of the above-mentioned ultraviolet laser machining apparatus that is used for the wafer cutting is characterized in that: described beam expanding lens carries out 8～15 times multiplying power adjusting, the Energy distribution of control focal beam spot.
Again further, the method for designing of the above-mentioned ultraviolet laser machining apparatus that is used for the wafer cutting, the light that described first lighting source penetrates sees through the 4th speculum, the 3rd speculum, the second focusing mirror mirror successively, wherein, the 4th speculum is 1: 1 at 45 ° to illumination light reflection and transmission ratio, the 3rd speculum is 1: 2 at 45 ° to illumination light reflection and transmission ratio, and second speculum is all-trans and the illumination light full impregnated at 45 ° of light to the 355nm wavelength.
Substantive distinguishing features and obvious improvement that technical solution of the present invention is outstanding are mainly reflected in:
1. the present invention adopts succinct and the complete light path design of function, the light spot energy on convenient, flexible control Laser Processing plane distributes, in optical transmission system by changing expansion bundle multiplying power, the focal length of focus lamp and the control that defocusing amount is implemented in processing plane hot spot and depth of focus thereof of beam expanding lens, send instruction in conjunction with industrial computer to laser instrument at last and adjust laser parameter, feasible ultraprecise less than 10um is cut into possibility, is applicable to the cutting of the semiconductor crystal wafer of various material specification;
2. adopt unique coaxial optics picture system of 3CCD, have accurate location and seek the limit function, upper and lower CCD switch call support to wafer just, cutting dorsad, coaxial in addition CCD realizes the real time monitoring function of cutting groove, satisfy the accurate location cutting of random appearance, realize real-time position observation and just, cut dorsad less than the 30um Cutting Road;
3. adopt the Precision Machining platform of marble base material band high accuracy grating chi feedback, make platform have high vibrostability and positioning accuracy, the feasible CCD from bottom to top of transparent quartzy table top carries out accurate image recognition to the lower surface of wafer, the high accuracy R axle electric rotating machine that platform is equipped with makes X and Y-axis cutting realize independent the adjustment, guarantees high slicing yield; Its cutting processing has satisfied the constantly needs of development of semicon industry preferably.
Description of drawings
Below in conjunction with accompanying drawing technical solution of the present invention is described further:
Fig. 1: the structural representation of system of the present invention;
Fig. 2: the structural principle schematic diagram of transmission laser system of the present invention and optical imagery system;
Fig. 3: the structural principle schematic diagram of processing platform of the present invention.
The implication of each Reference numeral sees the following form among the figure:
Reference numeral Implication Reference numeral Implication Reference numeral Implication
1 Ultraviolet laser 2 Transmission laser system 3 Processing platform
Reference numeral Implication Reference numeral Implication Reference numeral Implication
4 The optical imagery system 5 Industrial computer 6 Optical gate
7 Beam expanding lens 8 First speculum 9 Second speculum
10 Focus lamp 11 The 3rd speculum 12 The 4th speculum
13 The one CCD 14 The 2nd CCD 15 First lighting source
16 Second lighting source 17 The 3rd CCD 18 The marble base station
19 The X-axis line slideway 20 The Y-axis line slideway 21 R axle electric rotating machine
22 The suprasil table top
The specific embodiment
As shown in Figure 1, wafer Ultra-Violet Laser cutting equipment, comprise ultraviolet laser 1, transmission laser system 2, processing platform 3, optical imagery system 4 and industrial computer 5, sending laser by ultraviolet laser 1 incides in the transmission laser system 2, transmission laser system 2 impinges perpendicularly on the focal beam spot of high-energy-density on the processing platform 3, control the laser energy distribution that focuses on the processing platform surface by the optical component of regulating in the transmission laser system 2, position by 4 pairs of wafers to be processed of optical imagery system before the laser cutting and the planning of cutting track, during laser cutting laser beam axis keep motionless and processing platform 3 with respect to optical axis at X, two axial linear movement of Y; Ultraviolet laser 1 communicates by RS232 serial ports and industrial computer 5, and industrial computer 5 is to ultraviolet laser 1 transfer control instruction, and ultraviolet laser 1 is to industrial computer 5 transferring status datas; Optical imagery system 4 is sent to industrial computer 5 to the surface of the work image information of picked-up on processing platform 3 by image pick-up card and carries out the image processing, realizes the accurate cutting location of workpiece and the real-time detection of line of cut track; Realize the motion closed-loop control by motion control card between processing platform 3 and the industrial computer 5.The Control on Communication of ultraviolet laser, optical imagery processing, the adjustment of transmission laser system and the motion of processing platform are controlled by industrial computer.
The present invention adopts succinct light path design, can control laser easily and flexibly distributes at the light spot energy of processing plane, adapt to the cutting of the semiconductor crystal wafer of various material, adopt unique coaxial optics picture system of 3CCD, satisfy the accurate location cutting of random appearance less than the 30um Cutting Road, possess simultaneously real-time position observation and just, cutting function dorsad.Adopt the Precision Machining platform of marble base material band high accuracy grating chi feedback, make platform have high stability and positioning accuracy, the high accuracy R axle electric rotating machine that platform is equipped with makes X and Y-axis cutting realize independent the adjustment, guarantees higher slicing yield.
Transmission laser system 2 as shown in Figure 2, comprises optical gate 6, beam expanding lens 7, first speculum 8, second speculum 9 and focus lamp 10; The optical imagery system comprises a CCD13, the 2nd CCD14, the 3rd CCD17, first lighting source 15 and second lighting source 16.Wherein, the laser that ultraviolet laser 1 penetrates incides optical gate 6, the break-make of optical gate 6 control laser, and optical gate 6 stops that incident laser prevents overflowing of laser when not needing laser cutting; The laser vertical that penetrates through optical gate 6 incides beam expanding lens 7, beam expanding lens 7 has 8～15 times multiplying power regulatory function, be inversely proportional to for the expansion bundle multiplying power with the optical focusing system beam expanding lens that expands beam function and the waist diameter of focal beam spot as can be known by the first-order theory principle, therefore the energy branch of the effective control system focal beam spot of beam expanding lens 7 energy of adjustable multiplying power; The laser of beam expanding lens 7 outputs incides 45 ° of first speculum 8 earlier, reenter and be mapped to 45 ° of second speculum 9,8 couples of ultraviolet 355nm of first speculum laser carries out 45 ° and is all-trans, and 9 couples of ultraviolet 355nm of second speculum laser carries out 45 ° and is all-trans and anti-reflection to 45 ° of illumination light; Laser vertical behind second speculum, 9 corners incides focus lamp 10, focus lamp 10 is installed on the one dimension linear electric motors with vertical lift function, adjusts the Energy distribution of processing plane focal beam spot flexibly by the distance between control focus lamp 10 and the processing plane 3; The laser that sees through focus lamp 10 focuses on the surface of processing plane 3 at last.Wherein, the optical axis of first lighting source, 15 bright dippings is consistent with the optical axis that laser vertical incides processing platform 3, the light that first lighting source 15 penetrates sees through the 4th speculum 12, the 3rd speculum 11, second speculum 9 and focus lamp 10 successively, then shine on the processing platform 3, wherein, the 4th speculum 12 is 1: 1 at 45 ° to illumination light reflection and transmission ratio, the 3rd speculum 11 is 1: 2 at 45 ° to illumination light reflection and transmission ratio, and second speculum 9 is all-trans and the illumination light full impregnated at 45 ° of light to the 355nm wavelength; After the light of workpiece surface reflection on the processing platform 3 passes through focus lamp 10, second speculum 9, the 3rd speculum 11, the 4th speculum 12 successively, incide a CCD13 and the 2nd CCD14 respectively, wherein a CCD13 has the characteristic of the big multiplying power of small field of view, being used for workpiece front small breadth accurately locatees, the 2nd CCD14 has the characteristic of the big multiplying power of small field of view, is used for workpiece front small breadth and accurately locatees; The optical axis of second lighting source, 16 bright dippings is consistent with the optical axis that laser vertical incides processing platform 3, second lighting source 16 lower surface that impinges perpendicularly on workpiece on the processing platform 3 from bottom to top is (because the loading plane of processing platform 3 is transparent quartzy material, lighting source can see through), light through the reflection of workpiece lower surface turns back to the 3rd CCD17, the 3rd CCD17 has the characteristic of the big multiplying power of small breadth, is used for the accurate location of workpiece lower surface;
Processing platform 3 comprises marble base station 18, X-axis line slideway 19, Y-axis line slideway 20, R axle electric rotating machine 21 and suprasil table top 22 as shown in Figure 3.Wherein, marble base station 18 has good resistance to shock, effectively improves the stability of processing platform; X-axis line slideway 19 is installed on the marble base station 18 with Y-axis line slideway 20 is vertical relatively, and X-axis line slideway 19 and Y-axis line slideway 20 all have high-resolution grating chi as FEEDBACK CONTROL, and its positioning accuracy can reach micron dimension; R axle electric rotating machine 21 is installed on the Y-axis line slideway 20; Suprasil table top 22 is installed on the R axle electric rotating machine 21, and the Surface Machining of quartzy table top 22 has capillary through holes to realize vacuum suction, and second lighting source 16 can see through the function that quartzy table top 22 is realized workpiece lower surface capture location.
Can show, the invention enables ultraprecise to be cut into possibility less than 10um, in optical transmission system,, send instruction adjustment laser parameter in conjunction with industrial computer to laser instrument at last and make present device be fit to the cutting of the wafer of various material specification by changing expansion bundle multiplying power, the focal length of focus lamp and the control that defocusing amount is implemented in processing plane hot spot and depth of focus thereof of beam expanding lens.Adopt coaxial three ccd image recognition systems, this system possesses accurate location and seeks the limit function, upper and lower CCD switch call support to wafer just, cutting dorsad, coaxial in addition CCD can realize the real time monitoring function of cutting groove.The marble base station adds the suprasil table top of subsidiary vacuum micro-porous adsorption, and board has remarkable vibrostability, and the feasible CCD from bottom to top of transparent quartzy table top carries out accurate image recognition to the lower surface of wafer.
In sum, this technical scheme shows out following characteristics especially: 1) adopt succinct and the complete light path design of function, the light spot energy on convenient, flexible control Laser Processing plane distributes, and adapts to the cutting of the semiconductor crystal wafer of various material; 2) adopt unique coaxial optics picture system of 3CCD, satisfy the accurate location cutting of random appearance less than the 30um Cutting Road, possess simultaneously real-time position observation and just, cutting function dorsad; 3) the Precision Machining platform that adopts marble base material band high accuracy grating chi to feed back, make platform have high stability and positioning accuracy, the high accuracy R axle electric rotating machine that platform is equipped with makes X and Y-axis cutting realize independent the adjustment, guarantees higher slicing yield.Be widely used in the cutting of the semiconductor crystal wafer of various material, application prospect is good.
Below only be concrete exemplary applications of the present invention, protection scope of the present invention is not constituted any limitation.All employing equivalents or equivalence are replaced and the technical scheme of formation, all drop within the rights protection scope of the present invention.

Claims (5)

1. the method for designing that is used for the ultraviolet laser machining apparatus of wafer cutting, it is characterized in that: described ultraviolet laser machining apparatus comprises ultraviolet laser (1), transmission laser system (2), processing platform (3), optical imagery system (4) and industrial computer (5), described ultraviolet laser (1) sends laser and incides transmission laser system (2), transmission laser system (2) impinges perpendicularly on processing platform (3) with the focal beam spot of high-energy-density, focuses on the surperficial laser energy distribution of processing platform (3) by the optical component control of regulating in the transmission laser system (2); By optical imagery system (4) wafer to be processed is positioned before the laser cutting and the planning of cutting track, during laser cutting laser beam axis keep motionless and processing platform (3) with respect to optical axis in two axial linear movement of X, Y; Described ultraviolet laser (1) communicates by RS232 serial ports and industrial computer (5), and industrial computer (5) is to ultraviolet laser (1) transfer control instruction, and ultraviolet laser (1) is to industrial computer (5) transferring status data; Optical imagery system (4) is sent to industrial computer (5) to the surface of the work image information that goes up picked-up at processing platform (3) and carries out the image processing, workpiece is accurately cut the location, and detect the line of cut track in real time; Carry out the motion closed-loop control by motion control card between processing platform (3) and the industrial computer (5).
2. the method for designing that is used for the ultraviolet laser machining apparatus of wafer cutting according to claim 1, it is characterized in that: described transmission laser system (2) comprises optical gate (6), beam expanding lens (7), first speculum (8), second speculum (9) and focus lamp (10);
Described optical imagery system comprises a CCD (13), the 2nd CCD (14), the 3rd CCD (17), first lighting source (15) and second lighting source (16);
Described processing platform (3) comprises marble base station (18), X-axis line slideway (19), Y-axis line slideway (20), R axle electric rotating machine (21) and suprasil table top (22);
Wherein, the laser that ultraviolet laser (1) penetrates incides optical gate (6), the break-make of optical gate (6) control laser, and the laser vertical that penetrates through optical gate (6) incides beam expanding lens (7), the Energy distribution of beam expanding lens (7) control focal beam spot; The laser of beam expanding lens (7) output incides 45 ° of first speculum (8) earlier, reenter and be mapped to 45 ° of second speculum (9), first speculum (8) carries out 45 ° to ultraviolet 355nm laser and is all-trans, and second speculum (9) carries out 45 ° to ultraviolet 355nm laser and is all-trans and anti-reflection to 45 ° of illumination light; Laser vertical behind second speculum (9) corner incides focus lamp (10), focus lamp (10) is installed on the motor of vertical line lifting, by the Energy distribution of the distance adjustment processing plane focal beam spot between control focus lamp (10) and the processing platform (3), the laser that sees through focus lamp (10) focuses on the surface of processing platform (3);
Wherein, the optical axis of first lighting source (15) bright dipping is consistent with the optical axis that laser vertical incides processing platform (3), the light that first lighting source (15) penetrates sees through the 4th speculum (12), the 3rd speculum (11), second speculum (9) and focus lamp (10) successively, shines then on the processing platform (3); After the light of the last workpiece surface reflection of processing platform (3) passes through focus lamp (10), second speculum (9), the 3rd speculum (11), the 4th speculum (12) successively, incide a CCD (13) and the 2nd CCD (14) respectively, wherein a CCD (13) accurately locatees workpiece front small breadth, and the 2nd CCD (14) is to the edge identification of large format; The optical axis of second lighting source (16) bright dipping is consistent with the optical axis that laser vertical incides processing platform (3), second lighting source (16) lower surface that impinges perpendicularly on the last workpiece of processing platform (3) from bottom to top, light through the reflection of workpiece lower surface turns back to the 3rd CCD (17), and the 3rd CCD (17) accurately locatees the workpiece lower surface;
Wherein, X-axis line slideway (19) is installed on the marble base station (18) with Y-axis line slideway (20) is vertical relatively, and X-axis line slideway (19) and Y-axis line slideway (20) all have high-resolution grating chi; R axle electric rotating machine (21) is installed on the Y-axis line slideway (20); Suprasil table top (22) is installed on the R axle electric rotating machine (21).
3. the method for designing that is used for the ultraviolet laser machining apparatus of wafer cutting according to claim 2 is characterized in that: described beam expanding lens (7) carries out 8～15 times multiplying power adjusting, the Energy distribution of control focal beam spot.
4. the method for designing that is used for the ultraviolet laser machining apparatus of wafer cutting according to claim 2, it is characterized in that: the light that described first lighting source (15) penetrates sees through the 4th speculum (12), the 3rd speculum (11), second speculum (9) and focus lamp (10) successively, wherein, the 4th speculum (12) is 1: 1 at 45 ° to illumination light reflection and transmission ratio, the 3rd speculum (11) is 1: 2 at 45 ° to illumination light reflection and transmission ratio, and second speculum (9) is all-trans and the illumination light full impregnated at 45 ° of light to the 355nm wavelength.
5. the method for designing that is used for the ultraviolet laser machining apparatus of wafer cutting according to claim 2, it is characterized in that: the Surface Machining of described quartzy table top (22) has capillary through holes.
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