CN105312773A - Laser cutting method for wafers - Google Patents
Laser cutting method for wafers Download PDFInfo
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- CN105312773A CN105312773A CN201410371363.6A CN201410371363A CN105312773A CN 105312773 A CN105312773 A CN 105312773A CN 201410371363 A CN201410371363 A CN 201410371363A CN 105312773 A CN105312773 A CN 105312773A
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Abstract
The invention discloses a laser cutting method for wafers. The laser cutting method for the wafers comprises the following steps: a wafer is provided and comprises a front side and a back side corresponding to the front side, an adhesive film is attached to the back side of the wafer, and the wafer is cut from the front side to the back side with a laser cutting technology; the laser cutting technology comprises the following steps: a laser generator emits lasers, beam expansion, shaping, stray light filtration are performed on an optical path assembly through which the lasers pass, then the lasers are transmitted to a cutting head, and the cutting head cuts the wafer according to a wafer cut point determined by a CCD (charge coupled device) camera, so that multiple separated chips are formed. The laser cutting method for the wafers is high in working efficiency and precision, can adjust positions of various directions of the to-be-cut wafer accurately and operates automatically; the cut position of the wafer is positioned accurately, the wafer chips formed through cutting are uniform and attractive, various materials can be cut, the adaptability is high, and breaking of thin wafers due to cutting can be avoided.
Description
Technical field
The present invention relates to wafer manufacturing technical field, particularly relate to a kind of wafer laser cutting method.
Background technology
Along with the extensive use of silicon semiconductor integrated circuit, silicon semiconductor integrated circuit all will use wafer, traditional method for cutting wafer, all that the manual diamond tool that adopts cuts, wafer marks off several annulus, the annulus marked off cuts out area equation or approximately equalised small arc-shaped body.Or what adopt is non-uniform rings, carry out the cutting method of cutting in same central angle, and the consumptive material of this method for cutting wafer is large, often will change cutter, the chip wafer cut out width is apart larger, uneven, and the material that can cut is single, poor for applicability, inefficiency.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of wafer laser cutting method, the position that this wafer laser cutting method operating efficiency is high, accurately can adjust all directions of wafer to be cut, precision are high, fully automatic operation, the position of wafer cutting is accurately located, the chip wafer cut out is even, attractive in appearance, multiple material can be cut, strong adaptability, can avoid thin wafer to break because cutting.
For solving the problems of the technologies described above, wafer laser cutting method provided by the invention comprises: provide wafer, the back side that this wafer comprises front and answers with this vis-a-vis, glued membrane is attached at the back side of described wafer, by laser cutting parameter just cutting towards its back side from described wafer, described laser cutting parameter comprises laser generator and sends laser, laser is expanded by light path component, shaping, filter veiling glare, then just laser passes to cutting head, the wafer cut point that described cutting head is determined according to CCD camera cuts described wafer, to form the chip of multiple separation.
Preferably, described laser cutting parameter comprises the following steps:
S1: laser generator sends laser;
S2: the laser sent from described laser generator being carried out first time expands, and carries out filtering veiling glare;
S3: second time is carried out to described laser and expands, and by the laser transfer after expanding to cutting head;
S4:CCD camera is taken pictures to described wafer, and the wafer cut point that cutting head is determined according to CCD camera cuts described wafer, to form the chip of multiple separation.
Preferably, described light channel structure comprises the first speculum, the second speculum, the 3rd speculum, the 4th speculum, the first beam expanding lens, the second beam expanding lens, optical gate and diaphragm.
Preferably, described glued membrane is UV film.
Preferably, the implementation step of described step S2 comprises:
S201: by the laser sent from described laser generator through described first time beam expanding lens carry out many times and expand,
S202: by the laser through described first beam expanding lens through the first speculum, diaphragm, the second speculum, then pass to optical gate.
Preferably, the implementation step of described step S3 comprises:
S301: by the laser transfer through described optical gate to the 3rd speculum;
S302: by the laser transfer through the 3rd speculum to the second beam expanding lens, is undertaken many times by described second beam expanding lens and expands;
S303: by the laser through described second beam expanding lens through the 4th speculum, then pass to cutting head.
Preferably, the implementation step of described step S4 comprises:
S401:CCD camera is taken pictures to described wafer to be cut, and is analyzed by the photo photographed, and then determines the cut point above described wafer;
S402: the cut point data that cutting head is returned according to CCD cam feedback are cut described wafer;
S403: the Cutting Road that CCD camera is determined through whole wafer, to form the chip of multiple separation;
After adopting said method, by laser cutting parameter just cutting towards its back side from described wafer, described laser cutting parameter comprises laser generator and sends laser, laser is expanded by light path component, shaping, filter veiling glare, then just laser passes to cutting head, the wafer cut point that described cutting head is determined according to CCD camera cuts described wafer, the Cutting Road that CCD camera is determined is through whole wafer, to form the chip of multiple separation, this wafer laser cutting method operating efficiency is high, accurately can adjust the position of all directions of wafer to be cut, precision is high, cutting stress can not be produced, therefore the method for cutting wafer in the present invention can avoid breaking of thin wafer, the position of wafer cutting is accurately located, the chip wafer formed is even, attractive in appearance.
Accompanying drawing explanation
Fig. 1 is the flowchart of laser cutting parameter of the present invention;
Fig. 2 is the realization flow figure of step S2 in Fig. 1;
Fig. 3 is the realization flow figure of step S3 in Fig. 1;
Fig. 4 is the realization flow figure of step S4 in Fig. 1;
Detailed description of the invention
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only for explaining the present invention, being not intended to limit the present invention.
Refer to Fig. 1, Fig. 1 is the flowchart of laser cutting parameter of the present invention, in the present embodiment, wafer laser cutting method comprises: provide wafer, the back side that this wafer comprises front and answers with this vis-a-vis, glued membrane is attached at the back side of described wafer, by laser cutting parameter 10 just cutting towards its back side from described wafer, described laser cutting parameter comprises laser generator and sends laser, laser is expanded by light path component, shaping, filter veiling glare, then just laser passes to cutting head, the wafer cut point that described cutting head is determined according to CCD camera cuts described wafer, to form the chip of multiple separation.
Laser cutting parameter 10 comprises the following steps:
S1: laser generator sends laser;
S2: the laser sent from described laser generator being carried out first time expands, and carries out filtering veiling glare;
S3: second time is carried out to described laser and expands, and by the laser transfer after expanding to cutting head;
S4:CCD camera is taken pictures to described wafer, and the wafer cut point that cutting head is determined according to CCD camera cuts described wafer, to form the chip of multiple separation.
Light channel structure comprises the first speculum, the second speculum, the 3rd speculum, the 4th speculum, the first beam expanding lens, the second beam expanding lens, optical gate and diaphragm.
Preferred glued membrane is UV film in the present embodiment.
Referring again to the realization flow figure that Fig. 2, Fig. 2 are step S2 in Fig. 1;
The implementation step of the step S2 of laser cutting parameter 10 comprises:
S201: by the laser sent from described laser generator through described first time beam expanding lens carry out many times and expand;
S202: by the laser through described first beam expanding lens through the first speculum, diaphragm, the second speculum, then pass to optical gate.
Referring again to the realization flow figure that Fig. 3, Fig. 3 are step S3 in Fig. 1;
The implementation step of the step S3 of laser cutting parameter 10 comprises:
S301: by the laser transfer through described optical gate to the 3rd speculum;
S302: by the laser transfer through the 3rd speculum to the second beam expanding lens, is undertaken many times by described second beam expanding lens and expands;
S303: by the laser through described second beam expanding lens through the 4th speculum, then pass to cutting head.
Referring again to the realization flow figure that Fig. 4, Fig. 4 are step S4 in Fig. 1;
The implementation step of described step S4 comprises:
S401:CCD camera is taken pictures to described wafer to be cut, and is analyzed by the photo photographed, and then determines the cut point above described wafer.
S402: the cut point data that cutting head is returned according to CCD cam feedback are cut described wafer.
S403: the Cutting Road that CCD camera is determined through whole wafer, to form the chip of multiple separation.
By laser cutting parameter 10 just cutting towards its back side from wafer, laser cutting parameter 10 comprises laser generator and sends laser, laser is expanded by light path component, shaping, filter veiling glare, then just laser passes to cutting head, the wafer cut point that described cutting head is determined according to CCD camera cuts described wafer, the Cutting Road that CCD camera is determined is through whole wafer, to form the chip of multiple separation, this wafer laser cutting method operating efficiency is high, accurately can adjust the position of all directions of wafer to be cut, precision is high, cutting stress can not be produced, therefore the method for cutting wafer in the present invention can avoid breaking of thin wafer, the position of wafer cutting is accurately located, the chip wafer formed is even, attractive in appearance.
Should be understood that; these are only the preferred embodiments of the present invention; can not therefore limit the scope of the claims of the present invention; every utilize description of the present invention and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.
Claims (7)
1. wafer laser cutting method, it is characterized in that: wafer is provided, the back side that this wafer comprises front and answers with this vis-a-vis, glued membrane is attached at the back side of described wafer, by laser cutting parameter just cutting towards its back side from described wafer, described laser cutting parameter comprises laser generator and sends laser, laser is expanded by light path component, shaping, filters veiling glare, then just laser passes to cutting head, the wafer cut point that described cutting head is determined according to CCD camera cuts described wafer, to form the chip of multiple separation.
2. wafer laser cutting method according to claim 1, is characterized in that: described laser cutting parameter comprises the following steps:
S1: laser generator sends laser;
S2: the laser sent from described laser generator being carried out first time expands, and carries out filtering veiling glare;
S3: second time is carried out to described laser and expands, and by the laser transfer after expanding to cutting head;
S4:CCD camera is taken pictures to described wafer, and the wafer cut point that cutting head is determined according to CCD camera cuts described wafer, to form the chip of multiple separation.
3. wafer laser cutting method according to claim 1, is characterized in that: described light channel structure comprises the first speculum, the second speculum, the 3rd speculum, the 4th speculum, the first beam expanding lens, the second beam expanding lens, optical gate and diaphragm.
4. wafer laser cutting method according to claim 1, is characterized in that: described glued membrane is UV film.
5. wafer laser cutting method according to claim 2, is characterized in that: the implementation step of described step S2 comprises:
S201: by the laser sent from described laser generator through described first time beam expanding lens carry out many times and expand;
S202: by the laser through described first beam expanding lens through the first speculum, diaphragm, the second speculum, then pass to optical gate.
6. wafer laser cutting method according to claim 2, is characterized in that: the implementation step of described step S3 comprises:
S301: by the laser transfer through described optical gate to the 3rd speculum;
S302: by the laser transfer through the 3rd speculum to the second beam expanding lens, is undertaken many times by described second beam expanding lens and expands;
S303: by the laser through described second beam expanding lens through the 4th speculum, then pass to cutting head.
7. wafer laser cutting method according to claim 2, is characterized in that: the implementation step of described step S4 comprises:
S401:CCD camera is taken pictures to described wafer to be cut, and is analyzed by the photo photographed, and then determines the cut point above described wafer;
S402: the cut point data that cutting head is returned according to CCD cam feedback are cut described wafer;
S403: the Cutting Road that CCD camera is determined through whole wafer, to form the chip of multiple separation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410371363.6A CN105312773A (en) | 2014-07-30 | 2014-07-30 | Laser cutting method for wafers |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410371363.6A CN105312773A (en) | 2014-07-30 | 2014-07-30 | Laser cutting method for wafers |
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| CN105312773A true CN105312773A (en) | 2016-02-10 |
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| CN201410371363.6A Pending CN105312773A (en) | 2014-07-30 | 2014-07-30 | Laser cutting method for wafers |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112114433A (en) * | 2020-09-21 | 2020-12-22 | 中国科学院国家天文台南京天文光学技术研究所 | Film type image slicer device and working system thereof |
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| CN101733556A (en) * | 2009-12-25 | 2010-06-16 | 深圳市大族激光科技股份有限公司 | Laser cutting machine |
| CN102121664A (en) * | 2010-12-23 | 2011-07-13 | 成都太科光电技术有限责任公司 | Double beam expanding uniform parallel illumination light source |
| CN102773612A (en) * | 2012-06-07 | 2012-11-14 | 江阴德力激光设备有限公司 | Vibrating mirror type ultraviolet laser cutting wafer chip device and method thereof |
| CN202662577U (en) * | 2012-06-08 | 2013-01-09 | 矽品科技（苏州）有限公司 | Wafer chip mounter |
| CN103086318A (en) * | 2013-01-11 | 2013-05-08 | 烟台睿创微纳技术有限公司 | Micro-electromechanical system (MEMS) silicon wafer scribing and cutting and structure releasing method |
| JP2013226590A (en) * | 2012-04-26 | 2013-11-07 | Toshiba Corp | Laser cutting apparatus and laser cutting method |
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2014
- 2014-07-30 CN CN201410371363.6A patent/CN105312773A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101564794A (en) * | 2009-05-12 | 2009-10-28 | 苏州德龙激光有限公司 | Ultraviolet laser device for cutting copper substrate for high-power LED chip |
| CN101733556A (en) * | 2009-12-25 | 2010-06-16 | 深圳市大族激光科技股份有限公司 | Laser cutting machine |
| CN102121664A (en) * | 2010-12-23 | 2011-07-13 | 成都太科光电技术有限责任公司 | Double beam expanding uniform parallel illumination light source |
| JP2013226590A (en) * | 2012-04-26 | 2013-11-07 | Toshiba Corp | Laser cutting apparatus and laser cutting method |
| CN102773612A (en) * | 2012-06-07 | 2012-11-14 | 江阴德力激光设备有限公司 | Vibrating mirror type ultraviolet laser cutting wafer chip device and method thereof |
| CN202662577U (en) * | 2012-06-08 | 2013-01-09 | 矽品科技（苏州）有限公司 | Wafer chip mounter |
| CN103086318A (en) * | 2013-01-11 | 2013-05-08 | 烟台睿创微纳技术有限公司 | Micro-electromechanical system (MEMS) silicon wafer scribing and cutting and structure releasing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112114433A (en) * | 2020-09-21 | 2020-12-22 | 中国科学院国家天文台南京天文光学技术研究所 | Film type image slicer device and working system thereof |
| CN112114433B (en) * | 2020-09-21 | 2022-06-21 | 中国科学院国家天文台南京天文光学技术研究所 | Film type image slicer device and working system thereof |
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Application publication date: 20160210 |