CN102479697A - Method for processing optical device wafer - Google Patents
Method for processing optical device wafer Download PDFInfo
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- CN102479697A CN102479697A CN2011100480749A CN201110048074A CN102479697A CN 102479697 A CN102479697 A CN 102479697A CN 2011100480749 A CN2011100480749 A CN 2011100480749A CN 201110048074 A CN201110048074 A CN 201110048074A CN 102479697 A CN102479697 A CN 102479697A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
Abstract
Provided is a method for processing optical device wafer, capable of processing the light-admitting molding resin to the expected thickness, without causing rupture or leading to short circuit between electrodes. The optical device wafer forms a plurality of optical devices in the luminous layer and the surface of the luminous layer is covered by light-admitting molding resin capable of improving the light characteristic. The method for processing optical device wafer is characterized by comprising the procedures of a holding process that keeps the optical device wafer to a chuck workbench in a mode of exposing the light-admitting molding resin and a turning process that makes the turning tool operated upon the light-admitting molding resin of the optical device wafer kept by the chuck workbench while the turning tool rotates, thereby carrying out uniform turning over the light-admitting molding resin and making the thickness of the light-admitting molding resin reach the expected degree.
Description
Technical field
The present invention relates to the processing method of optical device wafer; This optical device wafer has many and cuts apart preset lines and optical device etc.; Cut apart the surface that preset lines is formed at this optical device wafer with being clathrate for said many, said optical device is formed at by this cuts apart each zone that preset lines marks off.
Background technology
In the manufacturing process of optical device; At sapphire substrate or carborundum (SiC) thus crystal growths such as substrate form luminescent layer (epitaxial loayer) with substrate laminated n type semiconductor layer and p type semiconductor layer; Form light-emitting diode (LED), laser diode light-emitting components such as (LDs) cutting apart each zone that preset lines marks off with being clathrate, thereby produce optical device wafer by many that are formed at this luminescent layer.
Then; Utilize the crystal growth of grinding attachment sun adjuster spare wafer to carry out grinding, make optical device wafer be thinned to preset thickness with substrate-side, and then after forming electrode; Utilize edges such as laser processing device to cut apart preset lines and cut apart, produce optical device (chip) one by one thus.
The luminescent layer that sends the LED of blue light is generally formed by nitride-based semiconductor, has characteristics such as output color dim spot higher, that caused by temperature is less, but often can't obtain high output in green above long wavelength's zone.
Therefore; Developed with the light transmission moulded resin and covered led chip and can send the LED of the light of white color system; This light transmission moulded resin contains fluorescent materials such as YAG:Ce, and fluorescent materials such as said YAG:Ce absorb from the light of the blueness of led chip and send the light that becomes the yellow of complementary color relation with blueness.
Yet; Along with luminescent device becomes small-sized; Can produce luminance nonuniformity or colourity inequality; Thereby light characteristic is descended, therefore in No. 3589187 communique of Japan Patent, proposed to make the light transmission moulded resin that contains fluorescent material to cover the formation method of the luminescent device till the side of luminescent device always.
Patent documentation 1: No. 3589187 communique of Japan Patent
Yet; As patent documentation 1 is put down in writing, the surface of light transmission moulded resin is ground and electrode exposed and when optical device wafer is refined to the thickness of expection, exist and produce the problem that (system シ レ), quality reduce of splitting of squeezing on the surface of light transmission moulded resin.
In addition; If with will from the outstanding gold of n type semiconductor layer and p type semiconductor layer perhaps the mode imbedded of electrode such as platinum cover the light transmission moulded resin; Then the surface of light transmission moulded resin is ground so that electrode exposes from the light transmission moulded resin, then exist the electrode each other might be because of the ductility problem of short-circuit of metal.
Summary of the invention
The present invention makes in view of such problem just, and its purpose is to provide a kind of can the generation on the surface of light transmission moulded resin to squeeze the processing method of splitting and do not worry the optical device wafer that electrode is short-circuited each other.
According to the present invention; A kind of processing method of optical device wafer is provided, and said optical device wafer is formed with a plurality of optical devices at luminescent layer, and in the surface coverage of this luminescent layer the light transmission moulded resin that light characteristic is improved is arranged; The processing method of said optical device wafer is characterised in that; The processing method of this optical device wafer comprises: keep operation, keep in the operation, so that the mode that said light transmission moulded resin exposes remains in chuck table with optical device wafer at this; And turning operation; In this turning operation; Make lathe tool in rotation, act on the said light transmission moulded resin of the optical device wafer that keeps by said chuck table; This light transmission moulded resin is carried out turning equably, thereby this light transmission moulded resin is refined to the thickness of expection.
Preferably, said luminescent layer comprises: the n type semiconductor layer; Be laminated in the p type semiconductor layer on this n type semiconductor layer; From the outstanding negative electrode of said n type semiconductor layer; And from the outstanding positive electrode of said p type semiconductor layer; Said light transmission moulded resin is covered in said luminescent layer with the mode that said negative electrode and said positive electrode are imbedded; In said turning operation; Said light transmission moulded resin is carried out turning, until said negative electrode and said positive electrode are exposed from this light transmission moulded resin.
Preferably, the light transmission moulded resin is selected from the group of being made up of epoxy resin, silicone resin, polyurethane resin, unsaturated polyester resin, acrylated polyurethane resin and polyimide resin.
The present invention is refined to the thickness of expection owing to by the lathe tool of rotation the light transmission moulded resin on the surface that is covered in optical device wafer is carried out turning equably with it, therefore can eliminate on the surface of light transmission moulded resin and produce the problem of splitting of squeezing.
In addition, owing to turning is carried out on the surface of light transmission moulded resin electrode is exposed from the light transmission moulded resin with the lathe tool of rotation, so the ductility of metal is suppressed, and can eliminate electrode problem of short-circuit each other.
Description of drawings
Fig. 1 is the face side stereogram of optical device wafer.
Fig. 2 is the stereogram that is equipped with the lathe tool topping machanism of lathe tool wheel.
Fig. 3 is the stereogram of lathe tool wheel.
Fig. 4 is the exploded perspective view of lathe tool unit.
(A) of Fig. 5 illustrates the end view that the lathe tool unit is installed to the mounting structure of wheel pedestal, and (B) of Fig. 5 is the front view that the part of this mounting structure is cut open.
(A) of Fig. 6 illustrates trim is installed to the end view of mounting structure of wheel pedestal with weight, and (B) of Fig. 6 is the front view that the part of this mounting structure is cut open.
Fig. 7 is the sketch map that illustrates with the turning manufacturing procedure of lathe tool wheel turning optical device wafer.
(A) of Fig. 8 is the local amplification view of the optical device wafer before the processing, and (B) of Fig. 8 is the local amplification view of the optical device wafer after the roughing, and (C) of Fig. 8 is the local amplification view of the optical device wafer after the fine finishining.
(A) of Fig. 9 is the vertical view of the optical device wafer before the processing, and (B) of Fig. 9 is the vertical view of the optical device wafer after the roughing, and (C) of Fig. 9 is the vertical view of the optical device wafer after the fine finishining.
Figure 10 illustrates the exploded perspective view that the surface of optical device wafer is sticked on the situation of the splicing tape that is assemblied in ring-shaped frame.
Figure 11 illustrates the stereogram that comes to form at the process for sapphire-based intralamellar part situation of metamorphic layer from the rear side illuminating laser beam of optical device wafer.
Figure 12 is the block diagram of laser beam irradiation unit.
Figure 13 is cut apart stereogram under preset lines formed metamorphic layer at the process for sapphire-based intralamellar part the state, be supported on the optical device wafer of ring-shaped frame via splicing tape along all.
Figure 14 is the longitudinal section that segmentation process is shown.
Label declaration
2: the lathe tool topping machanism; 10: the lathe tool cutting unit; 11: optical device wafer; 13: sapphire substrate; 15: luminescent layer; 19: optical device; 25: the lathe tool wheel; 26: the lathe tool unit; 30: chuck table; 31,33: electrode; 35: the light transmission moulded resin; 50: the wheel pedestal; 54: lathe tool; 56: cutting edge; 72,72a: turning trace; 82: concentrator; 94: metamorphic layer; 100: partition tools.
Embodiment
Below, the execution mode that present invention will be described in detail with reference to the accompanying.With reference to Fig. 1, show the face side stereogram of optical device wafer.Optical device wafer 11 constitutes through the epitaxial loayer (luminescent layer) 15 at sapphire substrate 13 laminated gallium nitride (GaN) etc.Optical device wafer 11 has: the surperficial 11a that is cascaded by luminescent layer 15; The back side 11b that is exposed with sapphire substrate 13.
At luminescent layer 15, utilize the preset lines (spacing track) 17 of cutting apart that is the formation of clathrate ground to be formed with a plurality of optical devices 19 such as LED with demarcating.Constitute to be coated with as the optical device wafer 11 of processing object of the present invention and omitted illustrated light transmission moulded resin at surperficial 11a.
That is, shown in the local amplification view of Fig. 8 (A), luminescent layer 15 comprises: be laminated in the n type semiconductor layer 27 on the sapphire substrate 13; Be laminated in the p type semiconductor layer 29 on the n type semiconductor layer 27; From the outstanding positive electrode 31 of p type semiconductor layer 29; And from the outstanding negative electrode 33 of n type semiconductor layer 27.
And the surperficial 11a of optical device wafer 11 is covered by light transmission moulded resin 35.Preferably, in light transmission moulded resin 35, contain as the fluorescent materials such as YAG:Ce that can send the fluorescent material of gold-tinted.Light transmission moulded resin 35 is selected from epoxy resin, silicone resin, polyurethane resin, unsaturated polyester resin, acrylated polyurethane resin or polyimide resin.
Then with reference to Fig. 2, the lathe tool topping machanism 2 of the processing method that is suitable for embodiment of the present invention is described.Label 4 is bases (housing) of lathe tool topping machanism 2, erects at the rear of base 4 and is provided with column 6.Be fixed with the pair of guide rails (only illustrating) 8 of extending along the vertical direction at column 6.
Lathe tool cutting unit 10 is assembling in the mode that above-below direction moves along said pair of guide rails 8.The housing 20 of lathe tool cutting unit 10 is installed on mobile foundation 12, and this mobile foundation 12 moves at above-below direction along pair of guide rails 8.
Lathe tool cutting unit 10 comprises: housing 20; Main shaft 22, this main shaft 22 is accommodated in (with reference to Fig. 7) in the housing 20 with the mode that can rotate; Bearing 24, this bearing 24 is fixed in the front end of main shaft 22; And lathe tool wheel 25, this lathe tool wheel 25 is assemblied in bearing 24 with the mode that can load and unload.Lathe tool unit 26 is installed on lathe tool wheel 25 with the mode that can load and unload.
Lathe tool cutting unit 10 possesses lathe tool cutting unit feed mechanism 18, and this lathe tool cutting unit feed mechanism 18 is made up of ball-screw 14 and impulse motor 16, and lathe tool cutting unit 10 is moved at above-below direction along pair of guide rails 8.When paired pulses motor 16 carries out pulsed drive, ball-screw 14 rotation, mobile foundation 12 moves at above-below direction.
Mid portion at base 4 is equipped with chuck table mechanism 28, and this chuck table mechanism 28 has chuck table 30, and chuck table mechanism 28 moves in Y direction by not shown chuck workbench moving arrangement.Label 33 is a corrugated cover, and it covers chuck table mechanism 28.
Front part at base 4 is equipped with: first wafer case 32, second wafer case 34, wafer transfer with robot 36, detent mechanism 38, wafer with a plurality of alignment pins 40 move into mechanism's (loading arm) 42, wafer is taken out of mechanism's (unload arm) 44 and rotation cleaning unit 46.
In addition, the substantial middle portion at base 4 is provided with the cleaning fluid injection nozzle 48 that is used to clean chuck table 30.Chuck table 30 be positioned device nearby the wafer of side move into and take out of the zone state under, this cleaning fluid injection nozzle 48 is to chuck table 30 jet cleaning liquid.
With reference to Fig. 3, show the stereogram of lathe tool wheel 25.Lathe tool wheel 25 comprises: the wheel pedestal 50 of ring-type; Lathe tool unit 26, this lathe tool unit 26 is installed on wheel pedestal 50 with the mode that can load and unload; And trim is with weight (counterweight) 66; This trim use weight 66 with the mode that can load and unload be installed on wheel pedestal 50, with the pivot of wheel pedestal 50 as benchmark with respect to 26 point-symmetric positions, lathe tool unit, and this trim is identical with the weight of lathe tool unit 26 with the weight of weight 66.Lathe tool wheel 25 is to the rotation of arrow R direction, thereby the light transmission moulded resin on the surface that is formed at optical device wafer 11 is cut.
Shown in the exploded perspective view of Fig. 4, lathe tool unit 26 comprises: the handle of a knife of rectangular shape (lathe tool handle) 52 roughly; With the lathe tool (cutting tools) 54 that is installed on handle of a knife 52 with the mode that can load and unload.Lathe tool 54 is tabular, and the face side in an end of its long side direction is installed with cutting edge 56, and this cutting edge 56 forms reservation shape by diamond etc.Be formed with the circular hole 59 that supplies screw 58 to insert at lathe tool 54.
Side at handle of a knife 52 is formed with groove 60, and this groove 60 has the degree of depth that equates with the thickness of lathe tool 54.Be formed with screwed hole 61 at groove 60.Lathe tool 54 is inserted in the groove 60 of handle of a knifes 52, and the circular hole 59 that screw 58 passes lathe tool 54 is screwed togather with screwed hole 61, lathe tool 54 is fixed in handle of a knife 52 thus.
As shown in Figure 5, taking turns the screwed hole 63 that pedestal 50 is formed with the installing hole 62 of rectangular shape and is opened on installing hole 62.The handle of a knife 52 of lathe tool unit 26 is inserted in the installing hole 62 that is formed at wheel pedestal 50, and screw 64 and screwed hole 63 are screwed togather and tighten, lathe tool unit 26 is fixed in wheel pedestal 50 thus.
On the other hand; Trim has the weight identical with lathe tool unit 26 with weight 66; Like Fig. 3 and shown in Figure 6, this trim is inserted in the erection opening 68 with weight 66, said erection opening 68 be formed at the wheel pedestal 50, with the wheel pedestal 50 pivot be that benchmark is with respect to 26 point-symmetric positions, lathe tool unit; And screw 70 is screwed in the screwed hole 69 and tightens, and this trim is fixed in wheel pedestal 50 with weight 66 thus.
Next, with reference to Fig. 7 to Figure 14, the processing method of the optical device wafer of embodiment of the present invention is described.In processing method of the present invention, at first as shown in Figure 7, the mode of exposing with light transmission moulded resin 35 remains in optical device wafer 11 chuck table 30 of lathe tool topping machanism 2.The local amplification view of the optical device wafer 11 before the cut is shown in Fig. 8 (A).
After so utilizing chuck table 30 to keep optical device wafer 11, the roughing operation that the light transmission moulded resin 35 of enforcement sun adjuster spare wafer 11 carries out turning (rotary cutting).
In this roughing operation; Make the speed rotation of main shaft 22 on one side with about 2000rpm; Driving cars break bar feed mechanism 18 is so that the cutting edge 56 of lathe tool unit 26 is cut 10 μ m to light transmission moulded resin 35 on one side; And, Yi Bian chuck table 30 is moved to the feed speed of arrow Y direction with 1800 μ m/ seconds, Yi Bian turning light transmission moulded resin 35.Add man-hour in this turning, make chuck table 30 process feeding and do not rotate to Y direction.
Local amplification view when roughing finishes is shown in Fig. 8 (B), and vertical view is shown in Fig. 9 (B).Shown in Fig. 9 (B), when having implemented roughing, be formed with thicker turning trace 72 on the surface of light transmission moulded resin 35.Shown in Fig. 8 (B),, electrode 31,33 stops roughing before soon exposing.
After roughing finishes, use the lathe tool unit 26 identical with roughing, change processing conditions and implement fine finishining.In fine finishining; Make the speed rotation of main shaft 22 on one side with about 2000rpm; Driving cars break bar feed mechanism 18 is so that the cutting edge 56 of lathe tool unit 26 is cut 2 μ m to light transmission moulded resin 35 on one side; And, Yi Bian chuck table 30 is moved to the feed speed of arrow Y direction with 600 μ m/ seconds, Yi Bian turning electrode 31,33 and light transmission moulded resin 35.
Local amplification view when fine finishining finishes is shown in Fig. 8 (C).When fine finishining finished, shown in Fig. 8 (C), electrode 31,33 exposed from light transmission moulded resin 35, shown in Fig. 9 (C), was formed with fine and close turning trace 72a on the surface of light transmission moulded resin 35.
Thereby after the light transmission moulded resin 35 of sun adjuster spare wafer 11 carries out turning and shown in Fig. 8 (C), light transmission moulded resin 35 is machined to predetermined thickness; Shown in figure 10, be implemented in the adhibiting strip adhibition step that splicing tape T is pasted on the surface of optical device wafer 11.
Preferably, the peripheral part of splicing tape T is pasted on ring-shaped frame F, optical device wafer 11 is supported on ring-shaped frame F via splicing tape T.Thus, the processing of optical device wafer 11 becomes easy.
Next, implement optical device wafer 11 is divided into the segmentation process of optical device 19 one by one.About this segmentation process, because the Mohs' hardness of the sapphire substrate 13 of optical device wafer 11 is high, so known first processing method and second processing method that the irradiation that has utilized laser beam is arranged.
First processing method is such method: the inside that will be positioned the substrate corresponding with cutting apart preset lines with respect to the focal point that sapphire substrate 13 has a laser beam of radioparent wavelength (for example 1064nm or 1560nm); Thereby make laser beam form metamorphic layer along cutting apart the preset lines irradiation; Apply external force then, optical device wafer 11 is divided into optical device 19 one by one.
Second processing method is such method: make the focal point irradiation zone corresponding with cutting apart preset lines that has the laser beam of absorbefacient wavelength (for example 355nm) with respect to sapphire substrate 13; Be processed to form as what cut apart starting point through ablate (ablation) and cut apart the starting point groove; Apply external force then, optical device wafer is divided into optical device one by one along cutting apart the starting point groove.
At this,, first processing method is elaborated with reference to Figure 11 to Figure 14.Form in the operation at the metamorphic layer of first processing method, as illustrated in fig. 11, the optical device wafer 11 that back side 11b is exposed attracts to remain in the chuck table 76 of laser processing device 74 via splicing tape T.
The laser beam irradiation unit 78 of laser processing device 74 is accommodated in the housing 80.Shown in figure 12, laser beam irradiation unit 78 comprises laser oscillator 86, repetition rate setting element 88, pulse duration adjustment member 90 and the power adjustment member 92 of the Er laser that vibrates.Label 84 is the shooting member.
Via splicing tape T attract to keep the chuck table 76 of optical device wafer 11 be positioned by not shown travel mechanism to make a video recording member 84 under.Then, the calibration that the machining area that should carry out laser processing of implementing sun adjuster spare wafer 11 by shooting member 84 detects.
Promptly; Shooting member 84 is carried out image processing such as pattern match with not shown control member; Thereby accomplish the calibration of laser beam irradiation position, image processing such as said pattern match are used to make along what the first direction of optical device wafer 11 extended and cut apart preset lines 17 and carry out position alignment along this laser beam irradiation unit 78 of cutting apart preset lines 17 illuminating laser beams.
At this moment; Though the surperficial 11a of cutting apart preset lines 17 that is formed with of optical device wafer 11 is positioned at downside; But sapphire substrate 13 is transparent with respect to visible light, and therefore the enough common imaging apparatuss of ability (CCD) are taken to 11b side perspective from the back side and cut apart preset lines 17.
After having implemented calibration procedure as described above, chuck table 76 is moved to the laser beam irradiation zone at the concentrator of illuminating laser beam 82 places, make along an end of cutting apart preset lines 17 of first direction elongation be positioned concentrator 82 under.
Then; Shown in figure 12; Make and be adjusted to laser beam preset power, have radioparent wavelength with respect to sapphire substrate 13 by power adjustment member 92 and reflect by the speculum 83 of concentrator 82; And then with object lens 85 this laser beam is shone in the inside that focal point is positioned the sapphire substrate 13 corresponding with cutting apart preset lines 17 by optically focused; Chuck table 76 is moved with predetermined feed speed along the arrow directions X, thereby form metamorphic layer 94 in the inside of sapphire substrate 13.Metamorphic layer 94 is as fusion cured layer and forming again.
For example, set this metamorphic layer as follows form the processing conditions in the operation.
Light source: Er pulse laser
Wavelength: 1560nm
Average output: 0.8W～1.2W
Repetition rate: 90～200kHz
Feed speed: 100～300mm/ second
After cut apart preset lines 17 to first direction elongation all and implemented this metamorphic layer and form operation; Chuck table 76 is revolved turn 90 degrees, then along implementing this metamorphic layers and form operation to cutting apart preset lines 17 with the second direction of first direction quadrature elongation all.Cut apart preset lines 17 formed the stereogram of state of metamorphic layer 94 in the inside of sapphire substrate 13 shown in figure 13 along all.
In the processing method of optical device wafer 11 of the present invention; After layer forms operation enforcement on the turn; Implement segmentation process; In this segmentation process, the optical device wafer 11 that is formed with metamorphic layer 94 is applied external force, be divided into one by one optical device 19 as having cut apart the optical device wafer 11 of naming a person for a particular job along cutting apart preset lines 17 with metamorphic layer 94.
Also can be; Not with metamorphic layer 94 as cutting apart starting point; Adopt the second above-mentioned processing method and replace; Make the laser beam irradiation that has an absorbefacient wavelength (for example 355nm) with respect to sapphire substrate 13 to the zone corresponding, cut apart the starting point groove through what (ablation) processing of ablating formed that conduct cuts apart starting point with cutting apart preset lines 17.
For example, set processing conditions in this ablation processing as follows.
Light source: YAG pulse laser
Wavelength: 355nm (the 3rd high order harmonic component of YAG laser)
Average output: 0.8W～1.2W
Repetition rate: 90～200kHz
Feed speed: 100～300mm/ second
In this segmentation process, for example shown in figure 14, put face carrying of cylinder 96 and to upload and put ring-shaped frame F, utilize binding clasp 98 to clamp ring-shaped frame F.Then, the partition tools 100 with rod-shape is equipped in the cylinder 96.
Implement segmentation process in order to utilize partition tools 100; The vacuum draw path 10 4 to partition tools 100 carries out vacuum draw shown in arrow 106 when; Make the higher level of partition tools 100 keep face 102a and subordinate to keep face 102b to contact with splicing tape T, partition tools 100 is moved to the arrow A direction from downside.That is, make partition tools 100 to moving with the direction of cutting apart preset lines 17 quadratures that will cut apart.
Thus; When higher level that metamorphic layer 94 moves to partition tools 100 keep face 102a the inside edge directly over the time; In having the segment set of cutting apart preset lines 17 of metamorphic layer 94, produce bending stress, utilize this bending stress that optical device wafer 11 is ruptured along cutting apart preset lines 17 for cutting apart starting point with metamorphic layer 94.
When along cutting apart to all of first direction elongation when finishing cutting apart of preset lines 17; Partition tools 100 is revolved to be turn 90 degrees; Cylinder 96 is revolved to be turn 90 degrees; The preset lines 17 of cutting apart along to second direction elongation is likewise cut apart, said cutting apart preset lines 17 and cutting apart preset lines 17 quadratures to the first direction elongation to the second direction elongation.Thus, optical device wafer 11 is divided into optical device 19 one by one.Label 95 among Figure 14 is a slot segmentation.
Processing method according to this above-mentioned execution mode; By lathe tool wheel 25 with cutting edge 56; Thereby the light transmission moulded resin 35 to the surface that is covered in optical device wafer 11 carries out the thickness that turning is refined to expection equably; Therefore can not produce on the surface of light transmission moulded resin 35 to squeeze and split, can light transmission moulded resin 35 be refined to the thickness of expection.
In addition, in the processing method of this execution mode, carry out turning, electrode 31,33 is exposed from light transmission moulded resin 35 with the surface of 25 pairs of light transmission moulded resins 35 of lathe tool wheel with cutting edge 56.Like this,, therefore suppressed the ductility of metal, can eliminate electrode problem of short-circuit each other owing to cut electrode 31,33 through the rotary cutting of realizing by lathe tool wheel 25.
Claims (4)
1. the processing method of an optical device wafer, said optical device wafer is formed with a plurality of optical devices at luminescent layer, and in the surface coverage of this luminescent layer the light transmission moulded resin that light characteristic is improved is arranged, and the processing method of said optical device wafer is characterised in that,
The processing method of this optical device wafer comprises:
Keep operation, keep in the operation, so that the mode that said light transmission moulded resin exposes remains in chuck table with optical device wafer at this; And
The turning operation; In this turning operation; Make lathe tool in rotation, act on the said light transmission moulded resin of the optical device wafer that keeps by said chuck table, this light transmission moulded resin is carried out turning equably, thereby this light transmission moulded resin is refined to the thickness of expection.
2. the processing method of optical device wafer according to claim 1, wherein,
Said luminescent layer comprises: the n type semiconductor layer; Be laminated in the p type semiconductor layer on this n type semiconductor layer; From the outstanding negative electrode of said n type semiconductor layer; And from the outstanding positive electrode of said p type semiconductor layer,
Said light transmission moulded resin is covered in said luminescent layer with the mode that said negative electrode and said positive electrode are imbedded,
In said turning operation, said light transmission moulded resin is carried out turning, until said negative electrode and said positive electrode are exposed from this light transmission moulded resin.
3. the processing method of optical device wafer according to claim 1 and 2, wherein,
Said light transmission moulded resin is selected from the group of being made up of epoxy resin, silicone resin, polyurethane resin, unsaturated polyester resin, acrylated polyurethane resin and polyimide resin.
4. the processing method of optical device wafer according to claim 1 and 2, wherein,
After having implemented said turning operation, also possess segmentation process, in this segmentation process, optical device wafer is divided into optical device one by one.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010264045A JP5733961B2 (en) | 2010-11-26 | 2010-11-26 | Processing method of optical device wafer |
| JP2010-264045 | 2010-11-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102479697A true CN102479697A (en) | 2012-05-30 |
| CN102479697B CN102479697B (en) | 2016-07-13 |
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Family Applications (1)
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| CN105679708A (en) * | 2014-12-05 | 2016-06-15 | 株式会社迪思科 | Processing method of photo device wafer |
| CN108172672A (en) * | 2018-01-30 | 2018-06-15 | 深圳大学 | A kind of LED chip and its manufacturing method with micro array structure |
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| JP2014239100A (en) * | 2013-06-06 | 2014-12-18 | 株式会社ディスコ | Processing method |
| JP6685592B2 (en) * | 2016-03-03 | 2020-04-22 | 株式会社ディスコ | Wafer processing method |
| JP6815119B2 (en) * | 2016-07-27 | 2021-01-20 | 株式会社ディスコ | Wafer processing method and light emitting device |
| JP6896347B2 (en) * | 2017-10-27 | 2021-06-30 | 株式会社ディスコ | Processing method of work piece |
| JP6896346B2 (en) * | 2017-10-27 | 2021-06-30 | 株式会社ディスコ | Processing method of work piece |
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| JP2009043931A (en) * | 2007-08-08 | 2009-02-26 | Disco Abrasive Syst Ltd | Rear-surface grinding method for wafer |
| JP2009274182A (en) * | 2008-05-15 | 2009-11-26 | Disco Abrasive Syst Ltd | Machining device equipped with cutting tool |
| JP2010221309A (en) * | 2009-03-19 | 2010-10-07 | Disco Abrasive Syst Ltd | Cutting tool and processing device with cutting tool |
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Patent Citations (3)
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| JP2003273408A (en) * | 2000-07-31 | 2003-09-26 | Nichia Chem Ind Ltd | Light emitting device |
| CN1496581A (en) * | 2002-01-11 | 2004-05-12 | 株式会社迪思科 | Semiconductor wafer protective member and semiconductor wafer grinding method |
| JP2006303105A (en) * | 2005-04-19 | 2006-11-02 | Disco Abrasive Syst Ltd | Method for machining semiconductor wafer |
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| CN105679708A (en) * | 2014-12-05 | 2016-06-15 | 株式会社迪思科 | Processing method of photo device wafer |
| TWI655043B (en) * | 2014-12-05 | 2019-04-01 | 日商迪思科股份有限公司 | Method for processing light-emitting element wafer |
| CN108172672A (en) * | 2018-01-30 | 2018-06-15 | 深圳大学 | A kind of LED chip and its manufacturing method with micro array structure |
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| Publication number | Publication date |
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| JP2012114366A (en) | 2012-06-14 |
| KR101623221B1 (en) | 2016-05-20 |
| TW201222865A (en) | 2012-06-01 |
| KR20120057483A (en) | 2012-06-05 |
| TWI500182B (en) | 2015-09-11 |
| JP5733961B2 (en) | 2015-06-10 |
| CN102479697B (en) | 2016-07-13 |
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