CN102655120B - Laser processing device - Google Patents
Laser processing device Download PDFInfo
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- CN102655120B CN102655120B CN201210049566.4A CN201210049566A CN102655120B CN 102655120 B CN102655120 B CN 102655120B CN 201210049566 A CN201210049566 A CN 201210049566A CN 102655120 B CN102655120 B CN 102655120B
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- 238000005520 cutting process Methods 0.000 claims abstract description 67
- 238000005286 illumination Methods 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 31
- 230000015572 biosynthetic process Effects 0.000 abstract description 25
- 238000003384 imaging method Methods 0.000 description 14
- 230000014759 maintenance of location Effects 0.000 description 13
- 229920000098 polyolefin Polymers 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004800 polyvinyl chloride Substances 0.000 description 4
- 230000011218 segmentation Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 206010028896 Needle track marks Diseases 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002173 cutting fluid Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Abstract
The invention provides a kind of without the need to increasing spacing track width, also just can forming laser processing and the laser processing device of the wafer of metamorphic layer without the need to the surface mount cutting belt at wafer in the inside of wafer along spacing track.The laser processing of described wafer forms metamorphic layer in the inside of wafer along spacing track, described wafer is formed with many spacing tracks in lattice shape on surface and is formed with device in the multiple regions marked off by many spacing tracks, the laser processing of described wafer comprises: wafer supporting operation, in described wafer supporting operation, the back side of wafer is affixed to the cutting belt being installed on ring-shaped frame; With metamorphic layer formation process, in described metamorphic layer formation process, make wavelength have radioparent laser beam relative to cutting belt and wafer from cutting belt side, focal point be positioned the inside of wafer and irradiate along spacing track, form metamorphic layer with the inside at wafer along spacing track.
Description
Technical field
The present invention relates to laser processing and the laser processing device of the wafer for forming metamorphic layer along spacing track in the inside of wafer, described wafer is formed with many spacing tracks in lattice shape on surface, and described wafer is formed with the devices such as microelectromechanical systems (MEMS) in the multiple regions marked off by many spacing tracks.
Background technology
In semiconductor devices manufacturing process, on the surface of the roughly semiconductor wafer of circular plate shape by arrange in lattice shape, the segmentation preset lines that is referred to as spacing track marks off multiple region, forms the devices such as IC (IntegratedCircuit: integrated circuit), LSI (LargeScaleIntegration: large scale integrated circuit), microelectromechanical systems (MEMS) in the described region marked off.Then, by semiconductor wafer cut-out being split the region being formed with device along spacing track, thus device is one by one produced.
Above-mentionedly the topping machanism being referred to as scribing machine (dicer) is usually utilized to carry out along spacing track to the cut-out that wafer carries out.This topping machanism possesses: chuck table, and it is for keeping the machined objects such as wafer; Cutting member, it possesses the cutting tool for cutting the machined object remaining on described chuck table; And cut feeding component, it relatively carries out cutting feeding for making chuck table and cutting member, this topping machanism is while make cutting tool rotate and supply cutting fluid to the cutting portion cut by this cutting tool, while make chuck table carry out cutting feeding, thus, the spacing track along wafer cuts off.
, because cutting tool has the thickness of about 20 μm ~ 30 μm, the width therefore dividing the spacing track of device needs to reach about 50 μm.Therefore, there is following problems: the area ratio shared by spacing track raises, and productivity ratio is poor.
On the other hand, as the method along spacing track segmentation wafer, proposition has following method: make wavelength have radioparent pulse laser light by the inside of focal point alignment wafer relative to wafer and irradiate along spacing track, the metamorphic layer as break origins is formed continuously along spacing track in the inside of wafer, the spacing track causing intensity to reduce along being formed with the described metamorphic layer as break origins applies external force, thus, along spacing track segmentation wafer.(for example, referring to patent document 1.)
Patent document 1: Japan Patent No. 3408805 publication
The metamorphic layer as break origins is formed continuously along spacing track in the inside of wafer, the spacing track causing intensity to reduce along being formed with the described metamorphic layer as break origins applies external force, thus segmentation wafer, as this kind of method, implement following method: from the rear side not forming spacing track of wafer the focal point of laser beam be positioned at the inside in the region corresponding with spacing track and irradiate laser beam to form metamorphic layer, then the back side of wafer is pasted on cutting belt, to the wafer applying external force being formed with metamorphic layer along spacing track in inside, split wafer thus., when the wafer being formed with metamorphic layer along spacing track in inside is pasted on cutting belt, there is the problem that wafer splits along spacing track.
On the other hand, the problems referred to above can be avoided: under the state being pasted onto the cutting belt being installed on ring-shaped frame at the back side of wafer by implementing following method, make laser beam from the face side of wafer at the inside optically focused of spacing track to form metamorphic layer, but there is following problems: the width of the irradiation area of laser beam needs to reach about 20% ~ 30% of the thickness of wafer, be such as in the wafer of 400 μm at the thickness being formed with microelectromechanical systems (MEMS), need the spacing track width of about 100 μm, the restriction of the design aspect of wafer is larger, productivity ratio is poor.
In addition, if adopt following method to eliminate the problems referred to above: at the surface mount of wafer under the state of cutting belt being installed on ring-shaped frame, make laser beam from the rear side of wafer at the inside optically focused of spacing track to form metamorphic layer, but there is following such problem: for the wafer being formed with the device that microphone, acceleration transducer, pressure sensor etc. are made up of microelectromechanical systems (MEMS), if by the surface mount of device in cutting belt, then sticker can be attached to microelectromechanical systems (MSMS) and damage device.
Summary of the invention
The present invention completes in view of the foregoing, its main technical task is the laser processing and the laser processing device that provide a kind of wafer, without the need to increasing spacing track width, also just can forming metamorphic layer in the inside of wafer along spacing track without the need to the surface mount cutting belt at wafer.
In order to solve above-mentioned main technical task, according to the present invention, provide a kind of laser processing of the wafer for forming metamorphic layer along spacing track in the inside of wafer, described wafer is formed with many spacing tracks in lattice shape on surface, and multiple regions that described wafer is being marked off by described many spacing tracks are formed with device
The feature of the laser processing of described wafer is,
The laser processing of described wafer comprises:
Wafer supporting operation, in described wafer supporting operation, affixes to the cutting belt being arranged on ring-shaped frame by the back side of wafer; With
Metamorphic layer formation process, in described metamorphic layer formation process, make wavelength have radioparent laser beam relative to cutting belt and wafer from cutting belt side, focal point be positioned the inside of wafer and irradiate along spacing track, and form metamorphic layer in the inside of wafer along spacing track.
And, according to the present invention, provide a kind of laser processing device, the internal irradiation laser beam that described laser processing device is used for along spacing track to wafer forms metamorphic layer with the inside at wafer along spacing track, described wafer is formed with many spacing tracks in lattice shape on surface, and multiple regions that described wafer is being marked off by described many spacing tracks are formed with device
The feature of described laser processing device is,
Described laser processing device possesses: chuck table, described chuck table possesses wafer holding section and ring-shaped frame maintaining part, described wafer holding section is used for keeping the wafer being pasted onto the cutting belt being installed on ring-shaped frame, described ring-shaped frame maintaining part is arranged on outside the peripheral direction of described wafer holding section, has the framework holding surface keeping described ring-shaped frame; Laser light irradiation component, described laser light irradiation component possesses concentrator, and described concentrator is used for illumination wavelength and has radioparent laser beam relative to the wafer and described cutting belt remaining on described chuck table; And mobile member, described mobile member is used for making described chuck table and described concentrator relative movement,
The described wafer holding section of described chuck table is formed by transparent component,
The described framework holding surface of the described ring-shaped frame maintaining part of described chuck table be formed with the multiple SS for aspirating described ring-shaped frame across described cutting belt and carry out the described cutting belt in the region between described ring-shaped frame and wafer periphery aspirating the multiple SSs kept
The described concentrator of described laser light irradiation component is configured to: from the downside of the described wafer holding section of described chuck table through described wafer holding section and described cutting belt to wafer illumination laser beam.
In the laser processing of wafer of the present invention, the back side of wafer is affixed to the cutting belt being installed on ring-shaped frame, and make wavelength have radioparent laser beam relative to cutting belt and wafer from cutting belt side, focal point be positioned the inside of wafer and irradiate along spacing track, thus form metamorphic layer in the inside of wafer along spacing track, therefore there is not the situation that pulse laser light is irradiated to the device on the surface being formed at wafer.Thus, be the spacing track of 20 ~ 30% of the thickness of wafer without the need to width, the situation that the width that therefore there is not spacing track at the design aspect of wafer is restricted.And, due to from just the rear side of wafer being pasted onto cutting belt at first, therefore also again pasting without the need to surface and the back side being overturn after formation metamorphic layer, thus the wafer when wafer is pasted again can be avoided in possible trouble along spacing track such problem of splitting.
And laser processing device of the present invention is configured to be possessed: chuck table, it possesses the maintaining part for keeping the wafer being pasted onto the cutting belt being installed on ring-shaped frame; Laser light irradiation component, it possesses the concentrator relative to the wafer and cutting belt that remain on described chuck table for illumination wavelength with radioparent laser beam; And mobile member, it is for making chuck table and described concentrator relative movement, the maintaining part of chuck table is formed by transparent component, the concentrator of laser light irradiation component to be configured to from the downside of the wafer holding section of chuck table through wafer holding section and cutting belt to wafer illumination laser beam, therefore, it is possible to implement the laser processing of above-mentioned wafer, above-mentioned action effect can be obtained.
Accompanying drawing explanation
Fig. 1 is the stereogram of the laser processing device according to the present invention's formation.
Fig. 2 is the stereogram utilizing the laser processing of wafer of the present invention to carry out the wafer of Laser Processing.
Fig. 3 is stereogram wafer supporting operation in the laser processing implementing wafer of the present invention being shown and the back side of wafer being affixed to the state of the cutting belt being installed on ring-shaped frame.
Fig. 4 is the key diagram of the wafer supporting operation in the laser processing of wafer of the present invention.
Fig. 5 is the key diagram of the calibration procedure in the laser processing of wafer of the present invention.
(a), (b) and (c) of Fig. 6 is the key diagram of the metamorphic layer formation process in the laser processing of wafer of the present invention.
(a) and (b) of Fig. 7 is the key diagram of the metamorphic layer formation process in the laser processing of wafer of the present invention.
Fig. 8 is the stereogram that wafer in the laser processing for implementing wafer of the present invention disconnects the band extension fixture of operation, disconnects in operation at wafer, and the wafer after implementing metamorphic layer formation process is disconnected along the spacing track defining metamorphic layer.
(a) and (b) of Fig. 9 disconnects the key diagram of operation by means of the wafer that the band extension fixture shown in Fig. 7 (a) He (b) is implemented.
The key diagram of the pickup process that Figure 10 implements by means of the band extension fixture shown in Fig. 7 (a) He (b).
Label declaration
1: laser processing device;
2: stationary base;
3: the 1 movable base;
30: the 1 mobile members;
4: the 2 movable base;
40: focal point position adjustment means;
5: the 3 movable base;
50: the 2 mobile members;
6: chuck table;
60: support unit;
61: ring-shaped frame maintaining part;
62: round-shaped wafer holding section;
7: laser light irradiation component;
72: concentrator;
8: imaging member;
9: band extension fixture;
91: frame retention member;
92: band expansion;
93: pickup chuck;
10: wafer;
11: ring-shaped frame;
12: cutting belt.
Detailed description of the invention
Below, with reference to accompanying drawing being preferred embodiment described in detail the laser processing of wafer of the present invention and laser processing device.
Figure 1 illustrates the stereogram of the laser processing device formed according to the present invention.
Laser processing device 1 shown in Fig. 1 possesses stationary base 2, the 1st movable base 3, the 2nd movable base 4 and the 3rd movable base 5.Be provided with pair of guide rails 21,21 in the side of the nearby side of this stationary base 2, this pair of guide rails 21,21 extends abreast along direction shown by arrow Y (Y direction).
1st movable base 3 is installed on above-mentioned stationary base 2 in the mode can slided along above-mentioned pair of guide rails 21,21.Namely, as shown in Figure 1, a surface opposed with stationary base 2 of the 1st movable base 3 is provided with a pair directed groove 31,31, this a pair directed groove 31,31 and the pair of guide rails 21,21 chimeric being located at stationary base 2, by by this pair directed groove 31,31 and above-mentioned pair of guide rails 21,21 chimeric, the 1st movable base 3 is assembled into and can slides in the Y-axis direction along pair of guide rails 21,21 in stationary base 2.And, the pair of guide rails 32,32 extended abreast along direction shown by arrow Z (Z-direction) is provided with on another surface of the 1st movable base 3.Laser processing device in illustrated embodiment possesses the 1st mobile member the 30,1st mobile member 30 and moves in the Y-axis direction along the pair of guide rails 21,21 being located at above-mentioned stationary base 2 for making the 1st movable base 3.1st mobile member 30 comprises: external thread rod 301, its to be disposed between pair of guide rails 21,21 and with this pair of guide rails 21,21 parallel; With impulse motor 302, it rotates for driving described external thread rod 301.External thread rod 301 screws togather with the internal thread 33 being located at above-mentioned 1st movable base 3, and one end of this external thread rod 301 is supported to can be rotated by the parts of bearings 303 being disposed in stationary base 2.The driving shaft of impulse motor 302 is connected with the other end of external thread rod 301.Therefore, drive external thread rod 301 forward or reverse by driving pulse motor 302 forward or reverse, thus the 1st movable base 3 is moved in the Y-axis direction along the pair of guide rails 21,21 being located at stationary base 2.
2nd movable base 4 is installed on the 1st above-mentioned movable base 3 in the mode can slided along above-mentioned pair of guide rails 32,32.Namely, a pair directed groove 41,41 is provided with in a side opposed with the 1st movable base 3 of the 2nd movable base 4, this a pair directed groove 41,41 is with the mode that can slide and the pair of guide rails 32,32 chimeric being located at the 1st movable base 3, by by this pair directed groove 41,41 and above-mentioned pair of guide rails 32,32 chimeric, thus the 2nd movable base 4 is mounted to slide direction shown by arrow Z (Z-direction) is upper along pair of guide rails 32,32 in the 1st movable base 3.And the 2nd movable base 4 possesses pair of guide rails 42,42, this pair of guide rails 42,42 is located at the side with an above-mentioned lateral vertical, and this pair of guide rails 42,42 extends abreast along direction shown by arrow X (X-direction).Laser processing device in illustrated embodiment possesses focal point position adjustment means 40, and this focal point position adjustment means 40 moves along the pair of guide rails 32,32 being located at the 1st above-mentioned movable base 3 in the Z-axis direction for making the 2nd movable base 4.Focal point position adjustment means 40 comprises: external thread rod 401, its to be disposed between pair of guide rails 32,32 and with this pair of guide rails 32,32 parallel; With impulse motor 402, it rotates for driving described external thread rod 401.External thread rod 401 screws togather with the internal thread 43 being located at the 2nd above-mentioned movable base 4, and one end of this external thread rod 401 is supported to can be rotated by the parts of bearings 403 being disposed in the 1st movable base 3.The driving shaft of impulse motor 402 is connected with the other end of external thread rod 401.Therefore, drive external thread rod 401 forward or reverse by driving pulse motor 402 forward or reverse, thus the 2nd movable base 4 is moved in the Z-axis direction along the pair of guide rails 32,32 being located at the 1st movable base 3.
3rd movable base 5 is installed on the 2nd above-mentioned movable base 4 in the mode can slided along above-mentioned pair of guide rails 42,42.Namely, a pair directed groove 51,51 (illustrate only of upside in FIG) is provided with in a side opposed with the 2nd movable base 4 of the 3rd movable base 5, this a pair directed groove 51,51 is with the mode that can slide and the pair of guide rails 42,42 chimeric being located at the 2nd above-mentioned movable base 4, by by this pair directed groove 51,51 and above-mentioned pair of guide rails 42,42 chimeric, the 3rd movable base 5 is mounted to slide direction shown by arrow X (X-direction) is upper along pair of guide rails 42,42 in the 2nd movable base 4.Laser processing device 1 in illustrated embodiment possesses the 2nd mobile member the 50,2nd mobile member 50 and moves in the X-axis direction along the pair of guide rails 42,42 being located at the 2nd above-mentioned movable base 4 for making the 3rd movable base 5.2nd mobile member 50 comprises: external thread rod 501, its to be disposed between pair of guide rails 42,42 and with this pair of guide rails 42,42 parallel; With impulse motor 502, it rotates for driving this external thread rod 501.External thread rod 501 screws togather with the internal thread (not shown) being located at above-mentioned 3rd movable base 5, and one end of this external thread rod 501 is supported to can be rotated by the parts of bearings 503 being disposed in the 2nd movable base 4.The driving shaft of impulse motor 502 is connected with the other end of external thread rod 501.Therefore, drive external thread rod 501 forward or reverse by driving pulse motor 502 forward or reverse, thus the 3rd movable base 5 is moved in the X-axis direction along the pair of guide rails 42,42 being located at the 2nd movable base 4.
Be provided with chuck table 6 on another surface of the 3rd above-mentioned movable base 5 via support unit 60, this chuck table 6 is for keeping being pasted onto the wafer be installed in the cutting belt of ring-shaped frame described later.Chuck table 6 is made up of following part: ring-shaped frame maintaining part 61, and it is for keeping ring-shaped frame described later; With round-shaped wafer holding section 62, it keeps wafer via cutting belt, and described wafer is pasted onto the cutting belt being installed on ring-shaped frame described later.Framework maintaining part 61 is formed as hollow form by metalwork, and offers multiple SS 612 at upper surface and framework holding surface 611.For the framework maintaining part 61 formed like this, multiple SS 612 is communicated with not shown aspiration means via hollow bulb.Further, erect in the framework holding surface 611 of framework maintaining part 61 two alignment pins 613a, 613b being provided with for locating ring-shaped frame described later.Above-mentioned wafer holding section 62 is formed by transparent components such as glass plates, and its outer peripheral face is arranged on the internal perisporium of ring-shaped frame maintaining part 61 by suitable sticker.The wafer holding section 62 of formation like this keeps being pasted onto the wafer being installed on the cutting belt of ring-shaped frame described later at upper surface and wafer holding surface 621.
Laser processing device 1 shown in Fig. 1 possesses laser light irradiation component 7, and this laser light irradiation component 7 is for the wafer illumination laser beam as machined object being held in chuck table 6.Laser light irradiation component 7 possesses: housing 71; Be disposed in the laser beam oscillating member (not shown) such as YAG laser oscillator or YVO4 laser oscillator in described housing 71; And concentrator 72, it is disposed in the upper surface of an end of housing 71, also irradiates upward for the pulse laser light optically focused sent being vibrated by laser beam oscillating member.
Be equipped with imaging member 8 in the upside of laser light irradiation component 7, this imaging member 8 should carry out the machining area of Laser Processing by laser light irradiation component 7 for detecting.This imaging member 8 comprises the parts such as illuminating member, optical system and imaging apparatus (CCD), and the picture signal photographed is sent to not shown control member by this imaging member 8, described illuminating member is used for throwing light on to machined object, described optical system is for catching the region of being thrown light on by this illuminating member, and the picture that described imaging apparatus is used for being captured by this optical system is made a video recording.In the illustrated embodiment, this imaging member 8 is configured in directly over concentrator 72 at predetermined spaced intervals.In addition, imaging member 8 is installed on the bracket 80 of L-shaped, and the bracket 80 of described L-shaped is arranged on the housing 71 of laser light irradiation component 7, and above-mentioned chuck table 6 is configured to move between concentrator 72 and imaging member 8.
Laser processing device 1 in illustrated embodiment is formed as described above, is described below to its effect.
Figure 2 illustrates the stereogram of the wafer utilizing the laser processing of wafer of the present invention to process.The silicon wafer that wafer 10 shown in Fig. 2 is such as 400 μm by thickness is formed, this wafer 10 marks off multiple region at surperficial 10a by many spacing tracks 101 formed in lattice shape, and is formed with the microelectromechanical systems (MEMS) as device 102 in the described region marked off.
In the laser processing of wafer of the present invention, first, as illustrated in fig. 3 the back side 10b of wafer 10 is affixed to the surface (wafer supporting operation) of the cutting belt 12 being installed on ring-shaped frame 11.In addition, wafer supporting operation also can be, when cutting belt 12 is installed to ring-shaped frame 11, the back side 10b of wafer 10 is affixed to the surface of cutting belt 12 simultaneously.Two engaging recessed parts 111a, 111b are provided with at the peripheral end face of above-mentioned ring-shaped frame 11, described two engaging recessed parts 111a, 111b are used for engaging with two alignment pins 613a, 613b, and described two alignment pins 613a, 613b erect the framework holding surface 611 being arranged at the framework maintaining part 61 of the chuck table 6 of above-mentioned formation laser processing device.And, cutting belt 12 adopt for the laser beam transmission of being irradiated by the laser light irradiation component 7 of above-mentioned laser processing device 1, such as polyvinyl chloride (PVC) or polyolefin (PO) sheet material.
With reference to Fig. 4 to Fig. 6, metamorphic layer formation process is described, in described metamorphic layer formation process, use above-mentioned laser processing device 1 to form metamorphic layer in the inside of wafer 10 along spacing track 101, described wafer 10 is pasted onto the surface of the cutting belt 12 being installed on ring-shaped frame 11 as illustrated in fig. 3.In order to implement metamorphic layer formation process, first as shown in Figure 4, the wafer 10 being supported on ring-shaped frame 11 via cutting belt 12 is placed on the chuck table 6 of laser processing device 1.Now, via cutting belt 12, wafer 10 is placed on wafer holding section 62, and ring-shaped frame 11 is placed in the ring-shaped frame maintaining part 61 of formation chuck table 6, and two engaging recessed parts 11la, 11lb being arranged at ring-shaped frame 11 are engaged with two alignment pins 613a, 613b that setting is arranged at the upper surface 611 of framework maintaining part 61.Consequently, the wafer 10 being supported on ring-shaped frame 11 via cutting belt 12 is positioned in the preposition of chuck table 6.Then, make not shown aspiration means action, thus ring-shaped frame 11 and wafer 10 are remained on (wafer maintenance operation) on chuck table 6 across cutting belt 12 suction.Thus, the surperficial 10a remaining on the wafer 10 on chuck table 6 is in upside.
After implementing above-mentioned wafer maintenance operation, by making the 1st mobile member 30 action, the chuck table 6 as illustrated in fig. 5 suction being maintained wafer 10 navigates to immediately below imaging member 8.When chuck table 6 is positioned to after immediately below imaging member 8, perform calibration procedure, in this calibration procedure, utilize imaging member 8 and not shown control member to detect the machining area that should carry out Laser Processing along the spacing track 101 of wafer 10.Namely, imaging member 8 and not shown control member perform the image procossing such as pattern match, thus completing the calibration of laser light irradiation position, the image procossing such as described pattern match are used for the position alignment between the spacing track 101 that carries out being formed along the predetermined direction of wafer 10 and the concentrator 72 of the laser light irradiation component 7 that irradiates laser beam along described spacing track 101.And, for many spacing tracks 101 formed on the direction orthogonal with many spacing tracks 101 being formed at wafer 10, complete the calibration of laser light irradiation position equally.
As mentioned above, detecting the spacing track 101 being formed at the wafer 10 remained on chuck table 6, after having carried out the calibration of laser light irradiation position, chuck table 6 is moved to the laser light irradiation region at concentrator 72 place of laser light irradiation component 7 as shown in (a) of Fig. 6, and one end (being left end in (a) of Fig. 6) of predetermined spacing track 101 is positioned directly over the concentrator 72 of laser light irradiation component 7.Then, the focal point P of pulse laser light is aimed at and the lower position of the surperficial 10a (upper surface) of wafer 10 at a distance of such as about 30 μm.Next, relative to silicon wafer, there is radioparent pulse laser light from concentrator 72 illumination wavelength, while make chuck table 6 move along the direction shown in the arrow X1 in (a) of Fig. 6 with predetermined feed speed.Now, the pulse laser light irradiated from concentrator 72 irradiates from the 10b side, the back side of wafer 10 through the wafer holding section 62 formed by transparent components such as glass plates and the cutting belt 12 that is made up of polyvinyl chloride (PVC) or polyolefin (PO) sheet material.Then, as shown in (b) of Fig. 6, when the other end (being right-hand member in (b) of Fig. 6) of spacing track 101 arrives the irradiation position of concentrator 72 of laser light irradiation component 7, the irradiation of stop pulse laser beam, and the movement stopping chuck table 6.Consequently, in the inside of wafer 10, near the surperficial 10a (upper surface) of wafer 10, form metamorphic layer 110 along spacing track 101.This metamorphic layer 110 is as melting cured layer formation again.
The processing conditions of above-mentioned metamorphic layer formation process such as sets as following.
In addition, under above-mentioned processing conditions, the thickness of the metamorphic layer 110 formed by the irradiation of a laser beam is 50 μm ~ 60 μm.Therefore, being that the wafer 10 of 400 μm is easily split in order to make thickness, needing to form the metamorphic layer that about five layer thicknesses are 50 μm ~ 60 μm.Therefore, by making the focal point P of the pulse laser light irradiated from the concentrator 72 of laser light irradiation component 7 move successively and implement above-mentioned metamorphic layer formation process, thus form five layers of metamorphic layer 110 in the inside of wafer 10 along spacing track 101 downwards as shown in (c) of Fig. 6.In addition, owing to being through the wafer holding section 62 formed by transparent components such as glass plates and the cutting belt 12 be made up of polyvinyl chloride (PVC) or polyolefin (PO) sheet material from 10b side, the back side irradiated with pulse laser light of wafer 10 in metamorphic layer formation process, therefore pulse laser light can not be irradiated to device 102.Thus, be the spacing track of 20 ~ 30% of the thickness of wafer 10 without the need to width, the situation that the width that therefore there is not spacing track in chip design is restricted.And, due to from just the rear side of wafer 10 being pasted onto cutting belt 12 at first, therefore, without the need to the surface of wafer 10 and back side upset being pasted again after formation metamorphic layer, thus the wafer when again the pasting of wafer is avoided in possible trouble along spacing track such problem of breaking.
Like this, after implementing above-mentioned metamorphic layer formation process along all spacing tracks 101 extended in a predetermined direction of wafer 10, above-mentioned metamorphic layer formation process is implemented along the spacing track 101 be formed on the direction orthogonal with predetermined direction.That is, as shown in (a) of Fig. 7, the one end (being right-hand member in (a) of Fig. 7) of the spacing track 101 be formed on the direction orthogonal with above-mentioned predetermined direction is positioned directly over the concentrator 72 of laser light irradiation component 7.Then, the focal point P of pulse laser light is aimed at and the lower position of the surperficial 10a (upper surface) of wafer 10 at a distance of such as about 30 μm.Next, relative to silicon wafer, there is radioparent pulse laser light from concentrator 72 illumination wavelength, while make chuck table 6 move along the direction shown in arrow Y1 in (a) of Fig. 7 with predetermined feed speed.Now, the pulse laser light irradiated from concentrator 72 irradiates from the 10b side, the back side of wafer 10 through the wafer holding section 62 formed by transparent components such as glass plates and the cutting belt 12 that is made up of polyvinyl chloride (PVC) or polyolefin (PO) sheet material.Like this, above-mentioned metamorphic layer formation process is implemented along each spacing track 101 be formed on the direction orthogonal with predetermined direction.
After implementing above-mentioned metamorphic layer formation process, implement to disconnect operation, in this disconnection operation, external force is applied to wafer 10, wafer 10 is disconnected along the spacing track 101 being formed with metamorphic layer 110.This disconnection operation utilizes the band extension fixture 9 shown in Fig. 8 to implement.Band extension fixture 9 shown in Fig. 8 possesses: frame retention member 91, and it is for keeping above-mentioned ring-shaped frame 11; Band expansion 92, it is for expanding cutting belt 12, and described cutting belt 12 is arranged on the ring-shaped frame 11 being held in described frame retention member 91; And pickup chuck 93.Frame retention member 91 is made up of the multiple clamping elements 912 as fixed component of ring-shaped frame holding member 911 with the periphery being disposed in described frame retention feature 911.The upper surface of frame retention feature 911 is formed as the mounting surface 911a for loading ring-shaped frame 11, and this mounting surface 911a loads ring-shaped frame 11.Further, the ring-shaped frame 11 be placed on mounting surface 911a is fixed on frame retention feature 911 by clamping element 912.The frame retention member 91 of such formation is supported to can be retreated along the vertical direction by band expansion 92.
Band expansion 92 possesses expansion cylinder 921, and this expansion cylinder 921 is disposed in the inner side of above-mentioned ring-shaped frame holding member 911.The internal diameter of this expansion cylinder 921 and external diameter less than the internal diameter of ring-shaped frame 11 and larger than the external diameter of the wafer 10 being pasted onto the cutting belt 12 being installed on this ring-shaped frame 11.And expansion cylinder 921 possesses support lug 922 in lower end.Band expansion 92 in illustrated embodiment possesses supporting member 923, and this supporting member 923 makes above-mentioned ring-shaped frame holding member 911 to retreat along the vertical direction.This supporting member 923 is made up of the multiple cylinder 923a be configured in above-mentioned support lug 922, and the piston rod 923b of described multiple cylinder 923a is connected with the lower surface of above-mentioned ring-shaped frame holding member 911.The supporting member 923 be so made up of multiple cylinder 923a makes ring-shaped frame holding member 911 move along the vertical direction between reference position and expanded position, as shown in (a) of Fig. 9, in described reference position, mounting surface 911a is positioned at the height roughly the same with the upper end of expansion cylinder 921, as shown in (b) of Fig. 9, in described expanded position, mounting surface 911a is positioned at the height of the upper end scheduled volume on the lower than expansion cylinder 921.
With reference to Fig. 9, the disconnection operation of the wafer utilizing the band extension fixture 9 formed as described above to implement is described.Namely, as shown in (a) of Fig. 9, the ring-shaped frame 11 being provided with the cutting belt 12 of pasting wafer 10 is placed on the mounting surface 911a of the frame retention feature 911 forming frame retention member 91, and utilizes clamping element 912 described ring-shaped frame 11 to be fixed on frame retention feature 911 (framework maintenance operation).Now, frame retention feature 911 is located in the reference position shown in (a) of Fig. 9.
As shown in (b) of Fig. 9, after implementing above-mentioned framework maintenance operation, make, as multiple cylinder 923a action of the supporting member 923 forming band expansion 92, to make ring-shaped frame holding member 911 drop to expanded position.Thus, the ring-shaped frame 11 be fixed on the mounting surface 911a of frame retention feature 911 also declines, therefore, as shown in (b) of Fig. 9, make the cutting belt 12 being installed on ring-shaped frame 11 contact with the upper edge of expansion cylinder 921 and expand (cutting belt expansion process).Consequently, radially tensile force is acted on to the wafer 10 being pasted onto cutting belt 12.Like this, when tensile force radially acts on to wafer 10, the intensity of the metamorphic layer 110 formed along spacing track 101 is reduced, therefore, the metamorphic layer 110 that intensity reduces becomes break origins, and wafer 10 disconnects along spacing track 101, thus is divided into device 102 one by one.
As shown in Figure 10, after being divided into device 102 one by one by implementing above-mentioned wafer disconnection operation to make wafer 10 disconnect along the spacing track 101 being formed with metamorphic layer 110, make pickup chuck 93 action carry out suction device 102, thus described device 102 is peeled off from cutting belt 12 and picks up (pickup process).In addition, in pickup process, because the gap S between device 102 is one by one extended, therefore, it is possible to easily carry out picking up and can not contacting with adjacent device 102.
Above, describe the present invention based on illustrated embodiment, but the present invention is not merely defined in embodiment, various distortion can also be carried out in the scope of purport of the present invention.Such as, show the example wafer separation being formed with the device be made up of microelectromechanical systems (MEMS) being become device one by one in the above-described embodiment, but, the present invention also can be applied to the semiconductor wafer being formed with the devices such as IC, LSI or the optical device wafer being formed with the optical device such as light emitting diode, CCD.
Claims (1)
1. a laser processing device, the internal irradiation laser beam that described laser processing device is used for along spacing track to wafer forms metamorphic layer with the inside at wafer along spacing track, described wafer is formed with many spacing tracks in lattice shape on surface, and multiple regions that described wafer is being marked off by described many spacing tracks are formed with device
The feature of described laser processing device is,
Described laser processing device possesses: chuck table, described chuck table possesses wafer holding section and ring-shaped frame maintaining part, described wafer holding section is used for keeping the wafer being pasted onto the cutting belt being installed on ring-shaped frame, described ring-shaped frame maintaining part is arranged on outside the peripheral direction of described wafer holding section, has the framework holding surface keeping described ring-shaped frame; Laser light irradiation component, described laser light irradiation component possesses concentrator, and described concentrator is used for illumination wavelength and has radioparent laser beam relative to the wafer and described cutting belt remaining on described chuck table; And mobile member, described mobile member is used for making described chuck table and described concentrator relative movement,
The described wafer holding section of described chuck table is formed by transparent component,
The described framework holding surface of the described ring-shaped frame maintaining part of described chuck table be formed with the multiple SS for aspirating described ring-shaped frame across described cutting belt and carry out the described cutting belt in the region between described ring-shaped frame and wafer periphery aspirating the multiple SSs kept
The described concentrator of described laser light irradiation component is configured to: from the downside of the described wafer holding section of described chuck table through described wafer holding section and described cutting belt to wafer illumination laser beam.
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| JP2011-047825 | 2011-03-04 | ||
| JP2011047825A JP5860217B2 (en) | 2011-03-04 | 2011-03-04 | Laser processing equipment |
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| JP2014165338A (en) * | 2013-02-25 | 2014-09-08 | Disco Abrasive Syst Ltd | Laser processing method |
| JP2014229702A (en) * | 2013-05-21 | 2014-12-08 | 株式会社ディスコ | Laser processing device |
| CN103400779B (en) * | 2013-07-09 | 2014-09-03 | 程君 | Manufacturing method of semiconductor display panel |
| KR20150130835A (en) * | 2014-05-14 | 2015-11-24 | 주식회사 이오테크닉스 | Laser processing method for cutting semiconductor with metal layer and laser processing apparatus |
| JP6491017B2 (en) * | 2015-04-08 | 2019-03-27 | 株式会社ディスコ | Workpiece transport tray |
| JP6175470B2 (en) * | 2015-10-22 | 2017-08-02 | 株式会社東京精密 | Laser dicing apparatus and method |
| JP2018063407A (en) * | 2016-10-14 | 2018-04-19 | 株式会社ディスコ | Method of processing bonded substrate |
| JP6649308B2 (en) * | 2017-03-22 | 2020-02-19 | キオクシア株式会社 | Semiconductor device and manufacturing method thereof |
| JP6879832B2 (en) * | 2017-06-14 | 2021-06-02 | 株式会社ディスコ | Wafer processing method |
| CN108031987A (en) * | 2017-12-29 | 2018-05-15 | 苏州德龙激光股份有限公司 | Glass-cutting extension fixture and its method |
| JP2019125688A (en) * | 2018-01-16 | 2019-07-25 | 株式会社ディスコ | Laser processing method of workpiece |
| CN108857241B (en) * | 2018-09-28 | 2024-03-26 | 湖南合盾工程刀具有限公司 | Clamp for processing plasma attached-melting surfacing cutter ring |
| CN112518147B (en) * | 2020-12-25 | 2022-04-22 | 山东帝诺亚舸船舶制造有限公司 | Automatic discharging mechanism for laser cutting machine |
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| JPS53114669A (en) * | 1977-03-17 | 1978-10-06 | Toshiba Corp | Cutting method for semiconductor wafer |
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| EP1441385A4 (en) * | 2001-10-31 | 2009-11-18 | Mitsuboshi Diamond Ind Co Ltd | Method of forming scribe line on semiconductor wafer, and scribe line forming device |
| JP4196403B2 (en) * | 2003-09-29 | 2008-12-17 | 株式会社東京精密 | Laser dicing method |
| JP4762671B2 (en) * | 2005-10-26 | 2011-08-31 | 古河電気工業株式会社 | Dicing tape and semiconductor wafer dicing method |
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| JP5603757B2 (en) * | 2009-12-04 | 2014-10-08 | リンテック株式会社 | Laser dicing adhesive sheet and method for manufacturing semiconductor device |
| JP4945835B1 (en) * | 2010-11-16 | 2012-06-06 | 株式会社東京精密 | Laser dicing apparatus and method, cleaving apparatus and method, and wafer processing method |
| JP5846470B2 (en) * | 2011-02-02 | 2016-01-20 | 株式会社東京精密 | Laser dicing apparatus and method, and wafer processing method |
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| CN102655120A (en) | 2012-09-05 |
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