JP2860671B2 - Dicing method for semiconductor wafer - Google Patents

Dicing method for semiconductor wafer

Info

Publication number
JP2860671B2
JP2860671B2 JP26909889A JP26909889A JP2860671B2 JP 2860671 B2 JP2860671 B2 JP 2860671B2 JP 26909889 A JP26909889 A JP 26909889A JP 26909889 A JP26909889 A JP 26909889A JP 2860671 B2 JP2860671 B2 JP 2860671B2
Authority
JP
Japan
Prior art keywords
semiconductor wafer
tape
ring frame
chuck table
cutting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP26909889A
Other languages
Japanese (ja)
Other versions
JPH03132056A (en
Inventor
幸太郎 南里
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHINNIPPON MUSEN KK
Original Assignee
SHINNIPPON MUSEN KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SHINNIPPON MUSEN KK filed Critical SHINNIPPON MUSEN KK
Priority to JP26909889A priority Critical patent/JP2860671B2/en
Publication of JPH03132056A publication Critical patent/JPH03132056A/en
Application granted granted Critical
Publication of JP2860671B2 publication Critical patent/JP2860671B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体ウエハを各素子ごとに分割する際の半
導体ウエハダイシング方法に関する。
Description: TECHNICAL FIELD The present invention relates to a semiconductor wafer dicing method for dividing a semiconductor wafer into individual devices.

〔従来の技術〕[Conventional technology]

トランジスタや半導体集積回路(IC)の半導体装置の
製造においては、半導体ウエハを酸化、拡散、蒸着等の
各工程を経て、一枚の半導体ウエハに多数個の同一回路
を形成する。次に半導体ウエハにダイシング作業を施
し、各素子を囲むように縦横に多数の溝を入れて各素子
(ペレット)ごとに分離する。このペレットをリードフ
レームにボンディングし、ワイヤボンディング、樹脂モ
ールドして各半導体装置に組み立てられる。
In manufacturing a semiconductor device such as a transistor or a semiconductor integrated circuit (IC), a large number of identical circuits are formed on one semiconductor wafer through various processes such as oxidation, diffusion, and vapor deposition of the semiconductor wafer. Next, a dicing operation is performed on the semiconductor wafer, and a large number of vertical and horizontal grooves are formed so as to surround each element, thereby separating each element (pellet). The pellet is bonded to a lead frame, wire-bonded, and resin-molded to be assembled in each semiconductor device.

この半導体ウエハからペレットに分離する方法として
は、リングフレームに半導体ウエハ貼り付け用のテープ
を接着し、そのテープに半導体ウエハを貼り付け、リン
グフレーム、テープごと半導体ウエハを固定して回転ブ
レードで各ペレットの周囲を縦横に切断し切り溝を入れ
る。この切断の際、半導体ウエハの固定はリングフレー
ムを磁石等により固定台に吸着すると共に、半導体ウエ
ハを貼り付けたテープを固定台側から真空吸引すること
により行う。この切断の際は冷却用液体をかけながら回
転ブレードを回転させて行うが、切削屑が半導体ウエハ
表面に付着するため、切断後速かに洗浄液で半導体ウエ
ハ表面の洗浄をする。この洗浄は切断時と同様に磁力と
真空吸引により半導体ウエハを固着し、低速で固定台と
共に回転させながら高圧の純水(100kg/cm2)を数10秒
噴出させて洗浄する。この洗浄の際の半導体ウエハの固
定状態を第5図に示す。同図(a)はチャックテーブル
4に固定した平面図で同図(b)はその部分的拡大断面
図で、1はリングフレーム、2はテープ、3は半導体ウ
エハ、4は固定台であるチャックテーブル、41はチャッ
クテーブル4に設けられた溝部でチャックテーブル4の
下側に設けられた図示しない真空ポンプにより吸引され
る構造となっている。従って真空ポンプを作動させれ
ば、チャックテーブル4の溝部41が真空状態となりテー
プ2が吸引され、半導体ウエハ3もチャックテーブル4
に固定されることになる。
As a method of separating the semiconductor wafer into pellets, a semiconductor wafer bonding tape is bonded to a ring frame, the semiconductor wafer is bonded to the tape, the ring frame, the semiconductor wafer together with the tape are fixed, and each is rotated with a rotating blade. Cut the periphery of the pellet vertically and horizontally to make kerfs. At the time of this cutting, the semiconductor wafer is fixed by adsorbing the ring frame to the fixing table with a magnet or the like and vacuum-sucking the tape to which the semiconductor wafer is attached from the fixing table side. This cutting is performed by rotating the rotating blade while applying a cooling liquid. However, since cutting chips adhere to the surface of the semiconductor wafer, the semiconductor wafer surface is quickly washed with the cleaning liquid after cutting. In this cleaning, the semiconductor wafer is fixed by magnetic force and vacuum suction as in the case of cutting, and high-pressure pure water (100 kg / cm 2 ) is jetted for several tens of seconds while rotating with the fixed base at a low speed for cleaning. FIG. 5 shows a fixed state of the semiconductor wafer at the time of this cleaning. FIG. 2A is a plan view fixed to the chuck table 4 and FIG. 2B is a partially enlarged cross-sectional view thereof, wherein 1 is a ring frame, 2 is a tape, 3 is a semiconductor wafer, and 4 is a chuck which is a fixing table. The table 41 has a groove provided in the chuck table 4 and is structured to be sucked by a vacuum pump (not shown) provided below the chuck table 4. Therefore, when the vacuum pump is operated, the groove 41 of the chuck table 4 is in a vacuum state, the tape 2 is sucked, and the semiconductor wafer 3 is also moved to the chuck table 4.
Will be fixed to.

〔発明が解決しようとする課題〕[Problems to be solved by the invention]

上述の従来の半導体ウエハの固定方法はチャックテー
ブル4の全面に真空吸引用溝部41を設け半導体ウエハ3
の全面に吸引力を働かせているため強力に固着されるよ
うに考えられる。しかし真空吸引すると第5図(b)に
示すようにテープ2が溝部41に吸引されるためテープ2
と半導体ウエハ3を切断したペレット31が剥離する。こ
の状態で洗浄用の純水を噴射するとペレット31が吹き飛
ばされ洗浄中に紛失することとなり収率が悪くなる。多
い場合には10%位歩留を低下させる場合がある。
According to the above-described conventional method of fixing a semiconductor wafer, a groove 41 for vacuum suction is provided on the entire surface of the chuck table 4 to form the semiconductor wafer 3.
It is thought that it is strongly adhered because the suction force is applied to the entire surface. However, when vacuum suction is applied, the tape 2 is sucked into the groove 41 as shown in FIG.
Then, the pellet 31 obtained by cutting the semiconductor wafer 3 is separated. When pure water for cleaning is injected in this state, the pellets 31 are blown off and lost during cleaning, resulting in a poor yield. In many cases, the yield may be reduced by about 10%.

このような対策としてダイシリング時に半導体ウエハ
3に入れる切り溝32を半導体ウエハ3の裏面まで入れて
各ペレット31に分離しないで一部を残して裏面で連結し
ておき、洗浄後にブレーキング作業でウエハ3を割って
各ペレット31に分離する方法も考えられている。しかし
後から半導体ウエハ3を割って分離する方法はブレーキ
ング時に半導体の回路部分まで割れが入って歩留を低下
させたり、割れ時の破片が特性不良等の原因となり信頼
性の面からも好ましくない。
As a countermeasure, a kerf 32 to be inserted into the semiconductor wafer 3 at the time of dicing is inserted into the back surface of the semiconductor wafer 3 and is not separated into the respective pellets 31 but is partially connected to the back surface without being separated. A method of dividing the wafer 3 into the respective pellets 31 by dividing the wafer 3 is also considered. However, the method of separating the semiconductor wafer 3 later by splitting is preferable from the viewpoint of reliability because cracks enter the circuit portion of the semiconductor at the time of braking and lower the yield, or fragments at the time of the crack cause poor characteristics and the like. Absent.

〔課題を解決するための手段〕[Means for solving the problem]

本発明は上述の課題を解決するため、リングフレーム
は半導体ウエハの径より十分大きくして半導体ウエハと
リングフレームの間のテープ部分のみとなる間隙部を設
け、切断時には半導体ウエハ裏面まで切り溝を入れて各
ペレットに分離できる状態とし、洗浄時の吸着方法とし
ては半導体ウエハ周囲の前記間隙部を主体に吸引して固
定し、半導体ウエハ下面からは殆んど吸引しないで洗浄
する方法を提供するものである。
According to the present invention, in order to solve the above-described problems, the ring frame is sufficiently larger than the diameter of the semiconductor wafer to provide a gap portion which is only a tape portion between the semiconductor wafer and the ring frame, and at the time of cutting, a cut groove is formed to the back surface of the semiconductor wafer. A method is provided in which the semiconductor wafer is put into a state in which it can be separated into individual pellets, and as a suction method at the time of cleaning, the above-mentioned gap around the semiconductor wafer is mainly suctioned and fixed, and cleaning is performed with almost no suction from the lower surface of the semiconductor wafer. Things.

〔実施例〕〔Example〕

第1図に本発明に係る半導体ウエハのダイシング方法
の工程をブロック図で示す。まず半導体ウエハ貼付工程
では第2図に示すように半導体ウエハ3の径より十分大
きい径を有するリングフレーム1に半導体ウエハ貼付用
のテープ2を接着し、そのテープ2の表面の中心部に半
導体ウエハ3を貼付する。その結果リングフレーム1と
半導体ウエハ3の外周との間にはテープ2のみが存在す
る間隙部を確保できる。次に切断工程に移り半導体ウエ
ハ3を接着したリングフレーム1及びテープ2ごとチャ
ックテーブルに磁力と真空吸引力により固定しダイヤモ
ンドカッタ等の回転ブレードにより半導体ウエハの縦横
に切り溝を入れる。この際切り溝は半導体ウエハ3の裏
面まで及ぶようにし、切断した各片はテープ2と接着力
で保持する。次に洗浄乾燥工程に移り、まず第3図
(a)に平面図及び同図(b)に部分的拡大断面図を示
すように切断した各ペレット31をテープ2及びリングフ
レーム1を介してチャックテーブル4に固定する。即ち
リングフレーム1は磁力によりチャックテーブル4に吸
着させると共に、テープ2はチャックテーブル4に設け
た溝部41が図示しない真空ポンプにより吸引され真空状
態となり吸着される。この際テープ2の吸着する部分は
半導体ペレット31の下部にはできるだけ設けないで半導
体ウエハ3とリングフレーム1との間隙部でテープ2を
吸着するよう、チャックテーブル4の溝部41は半導体ウ
エハ3の外延部となる位置に設けている。こうして半導
体ペレット31をテープ2を介してチャックテーブル4に
固定し、チャックテーブル4ごと回転させながら高圧の
純水(100kg/cm2)を数10秒噴出させて洗浄し、切断工
程での切屑等を排除する。洗浄後純水は止めて窒素を吹
き付けながらチャックテーブル4の回転を続けて乾燥さ
せる。
FIG. 1 is a block diagram showing the steps of the semiconductor wafer dicing method according to the present invention. First, in the semiconductor wafer attaching step, as shown in FIG. 2, a semiconductor wafer attaching tape 2 is adhered to a ring frame 1 having a diameter sufficiently larger than the diameter of the semiconductor wafer 3, and a semiconductor wafer is attached to the center of the surface of the tape 2. 3 is attached. As a result, a gap where only the tape 2 exists can be secured between the ring frame 1 and the outer periphery of the semiconductor wafer 3. Next, the process proceeds to a cutting step, in which the ring frame 1 and the tape 2 to which the semiconductor wafer 3 is adhered are fixed to the chuck table by magnetic force and vacuum suction force, and cut grooves are formed in the vertical and horizontal directions of the semiconductor wafer by a rotary blade such as a diamond cutter. At this time, the cut groove extends to the back surface of the semiconductor wafer 3, and each cut piece is held with the tape 2 by an adhesive force. Next, the process proceeds to the washing and drying step. First, each pellet 31 cut as shown in a plan view in FIG. 3 (a) and a partially enlarged sectional view in FIG. 3 (b) is chucked through the tape 2 and the ring frame 1. Fix to table 4. That is, the ring frame 1 is attracted to the chuck table 4 by a magnetic force, and the tape 2 is attracted by the groove 41 provided on the chuck table 4 being sucked by a vacuum pump (not shown) to be in a vacuum state. At this time, the portion where the tape 2 is adsorbed is not provided as much as possible below the semiconductor pellet 31, and the groove 41 of the chuck table 4 is formed so that the tape 2 is adsorbed in the gap between the semiconductor wafer 3 and the ring frame 1. It is provided at a position to be an extension. The semiconductor pellet 31 is fixed to the chuck table 4 via the tape 2 in this manner, and the high-pressure pure water (100 kg / cm 2 ) is jetted for several tens of seconds while rotating the entire chuck table 4 for cleaning, and chips and the like in the cutting process are removed. To eliminate. After the washing, the pure water is stopped, and the chuck table 4 is rotated while blowing nitrogen to dry.

こうして洗浄乾燥されたペレット31付きのリングフレ
ーム1は自動的にカセットに収納され、ダイボンディン
グ工程に移され、ペレット31を1個1個ピックアップし
てリードフレームにダイボンディングされる。
The ring frame 1 with the pellets 31 thus washed and dried is automatically stored in a cassette, and is transferred to a die bonding step, in which the pellets 31 are picked up one by one and die-bonded to a lead frame.

第4図は本発明の他の実施例であるチャックテーブル
への固定方法を示す平面図で、この実施例ではチャック
テーブル4を円形にして溝部41も円形に形成したもので
ある。
FIG. 4 is a plan view showing a method of fixing to a chuck table according to another embodiment of the present invention. In this embodiment, the chuck table 4 is circular and the groove 41 is also circular.

〔発明の効果〕〔The invention's effect〕

以上説明したように本発明によれば、半導体ウエハの
切断時は半導体ウエハの裏面まで完全に切り溝を入れ、
次に洗浄乾燥工程では半導体ウエハのない部分でテープ
を真空吸着し、半導体ペレット裏面からは殆んど吸着し
ないため洗浄時にペレットが剥れて紛失することがな
く、また、後からブレーキング等の工程を必要とせず、
ペレットのかけ、割れ等による不良も発生せず歩留を大
幅に向上できると共に工数の低減も図れ、また信頼性向
上にも寄与する。
According to the present invention as described above, when cutting a semiconductor wafer, a kerf is completely formed up to the back surface of the semiconductor wafer,
Next, in the washing and drying step, the tape is vacuum-sucked at a portion where there is no semiconductor wafer, and hardly sticks from the back surface of the semiconductor pellet. No process required,
It is possible to significantly improve the yield without causing defects such as pellets and cracks and to reduce man-hours, and to contribute to improvement in reliability.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明の製造工程を示すブロック図、第2図は
半導体ウエハ貼付工程でのウエハを貼付した状態を示す
平面図、第3図は洗浄乾燥工程での半導体ウエハをチャ
ックテーブルに固定する方法を示す図で、同図(a)は
平面図、同図(b)は部分的拡大断面図、第4図は本発
明の他の固定方法を示す平面図、第5図は従来の半導体
ウエハをチャックテーブルに固定する方法を示す図で同
図(a)は平面図、同図(b)は部分的拡大図である。 1……リングフレーム、2……テープ、3……半導体ウ
エハ、4……チャックテーブル、31……半導体ペレッ
ト、41……溝部。
FIG. 1 is a block diagram showing a manufacturing process of the present invention, FIG. 2 is a plan view showing a state where a wafer is attached in a semiconductor wafer attaching process, and FIG. 3 is a semiconductor wafer fixed on a chuck table in a washing and drying process. 5A is a plan view, FIG. 4B is a partially enlarged sectional view, FIG. 4 is a plan view showing another fixing method of the present invention, and FIG. FIG. 2A is a plan view showing a method of fixing a semiconductor wafer to a chuck table, and FIG. 2B is a partially enlarged view. 1 ... Ring frame, 2 ... Tape, 3 ... Semiconductor wafer, 4 ... Chuck table, 31 ... Semiconductor pellet, 41 ... Groove.

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】リングフレーム円内にテープを接着し、該
テープの表面に半導体ウエハを貼付する工程と、該半導
体ウエハを各ペレットに切断するため回転ブレードによ
り所定の切り溝を入れる切断工程と、該切り溝を入れた
半導体ウエハを真空吸着により固定して洗浄し乾燥する
工程とからなる半導体ウエハのダイシング方法におい
て、 前記半導体ウエハ貼付工程で該リングフレームを該半導
体ウエハの径より大きくし該リングフレームと該半導体
ウエハの間に該テープのみが存在する間隙部を有せし
め、前記切断工程で該半導体ウエハの裏面まで切り溝を
入れ、前記洗浄乾燥工程で該テープのみが存在する間隙
部を主体に真空吸引して固定し洗浄乾燥することを特徴
とする半導体ウエハのダイシング方法。
1. A step of bonding a tape in a ring frame circle and attaching a semiconductor wafer to the surface of the tape, and a cutting step of forming a predetermined kerf by a rotating blade for cutting the semiconductor wafer into pellets. Fixing the semiconductor wafer having the kerfs by vacuum suction, cleaning and drying the semiconductor wafer, wherein the ring frame is larger than the diameter of the semiconductor wafer in the semiconductor wafer attaching step. A gap is provided between the ring frame and the semiconductor wafer where only the tape is present, a kerf is formed in the cutting step up to the back surface of the semiconductor wafer, and a gap where only the tape is present in the cleaning and drying step. A dicing method for a semiconductor wafer, wherein the semiconductor wafer is fixed by vacuum suction and washed and dried.
JP26909889A 1989-10-18 1989-10-18 Dicing method for semiconductor wafer Expired - Lifetime JP2860671B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26909889A JP2860671B2 (en) 1989-10-18 1989-10-18 Dicing method for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26909889A JP2860671B2 (en) 1989-10-18 1989-10-18 Dicing method for semiconductor wafer

Publications (2)

Publication Number Publication Date
JPH03132056A JPH03132056A (en) 1991-06-05
JP2860671B2 true JP2860671B2 (en) 1999-02-24

Family

ID=17467647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26909889A Expired - Lifetime JP2860671B2 (en) 1989-10-18 1989-10-18 Dicing method for semiconductor wafer

Country Status (1)

Country Link
JP (1) JP2860671B2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197584A (en) * 2001-12-21 2003-07-11 Disco Abrasive Syst Ltd Supporting base for thin plate processing work
DE102007033242A1 (en) * 2007-07-12 2009-01-15 Jenoptik Automatisierungstechnik Gmbh Method and device for separating a plane plate made of brittle material into several individual plates by means of laser
JP2009043771A (en) * 2007-08-06 2009-02-26 Disco Abrasive Syst Ltd Chuck table mechanism and holding method for workpiece
JP5860217B2 (en) * 2011-03-04 2016-02-16 株式会社ディスコ Laser processing equipment
JP5860219B2 (en) * 2011-03-10 2016-02-16 株式会社ディスコ Laser processing equipment

Also Published As

Publication number Publication date
JPH03132056A (en) 1991-06-05

Similar Documents

Publication Publication Date Title
JP2001035817A (en) Method of dividing wafer and manufacture of semiconductor device
CN1323431C (en) Semiconductor producing device and method for producing semiconductor device
JP2008071892A (en) Method of manufacturing laminating device
JPH09167779A (en) Semiconductor production machine
JP2000164534A (en) Wafer separating device and its method
JP2000138277A (en) Method and system for picking up semiconductor chip unit from wafer
JP2001093864A (en) Semiconductor wafer fixing jig and method for manufacturing semiconductor device
JP2860671B2 (en) Dicing method for semiconductor wafer
US10658240B1 (en) Semiconductor die singulation
JPH10189690A (en) Pick-up device and method of semiconductor chip
JP2000091274A (en) Formation of semiconductor chip and manufacture of semiconductor device using the same
JP2001060591A (en) Manufacture of semiconductor device
US20090188359A1 (en) Block-Molded Semiconductor Device Singulation Methods and Systems
US20080242053A1 (en) Integrated circuit system with a debris trapping system
JP2003059863A (en) Wafer-cutting device
JP2004273639A (en) Method for manufacturing semiconductor device
US7901988B2 (en) Method for forming a package-on-package structure
US20050221722A1 (en) Wafer grinding using an adhesive gel material
JPH09213661A (en) Method of manufacturing semiconductor device
JPH07147262A (en) Manufacturing method of semiconductor device
KR20010069204A (en) Wafer level semiconductor device and method of manufacturing the same
JP2005317799A (en) Manufacturing method of semiconductor device
KR100289403B1 (en) Semiconductor package manufacturing method
JP2001085359A (en) Method for manufacturing semiconductor device
JP3442849B2 (en) Method for manufacturing semiconductor device

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20071211

Year of fee payment: 9

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081211

Year of fee payment: 10

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091211

Year of fee payment: 11

EXPY Cancellation because of completion of term