CN109604838A - Semiconductor laser processing unit (plant) - Google Patents
Semiconductor laser processing unit (plant) Download PDFInfo
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- CN109604838A CN109604838A CN201811580461.5A CN201811580461A CN109604838A CN 109604838 A CN109604838 A CN 109604838A CN 201811580461 A CN201811580461 A CN 201811580461A CN 109604838 A CN109604838 A CN 109604838A
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- Prior art keywords
- laser
- workpiece
- focusing
- cutting
- plant
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
Abstract
The present invention relates to a kind of semiconductor laser processing unit (plant)s, it include: laser cutting mechanism, including first laser device and first laser reshaper, the first laser light beam of the first laser device transmitting is collimated through the first laser reshaper, after focus processing, is cut to workpiece laser；Laser sliver mechanism, including second laser and second laser reshaper, the second laser light beam of the second laser transmitting is after the second laser reshaper is shaped as the collimated light beam of at least two beams focusing, to the workpiece laser cutting position sliver；And driving mechanism, drive the workpiece to corresponding Working position.This semiconductor laser processing unit (plant) is more smooth to semiconductor devices cutting, and without obvious chipping and residue splash phenomena.
Description
Technical field
The present invention relates to the technical fields of wafer processing, more particularly to semiconductor laser processing unit (plant).
Background technique
Wafer refers to silicon wafer used in silicon semiconductor production of integrated circuits, since its shape is circle, therefore referred to as wafer.
It can be processed on silicon and is fabricated to various circuit component structures, and become the IC product for having specific electrical functionality.With silicon (Si),
GaAs (GaAs) is the first generation of representative and the high speed development of second generation semiconductor material, has pushed microelectronics, photoelectron skill
The fast development of art.However limited by material property, device made of these semiconductor materials mostly can only be below at 200 DEG C
It works in environment, is not able to satisfy requirement of the modern electronic technology to high temperature, high frequency, high pressure and anti-radiation device.As third
For the representative of wide bandgap semiconductor materials, silicon carbide (SiC) monocrystal material has forbidden bandwidth big (being 3 times of Si), thermal conductivity
High (being 10 times of 3.3 times or GaAs of Si), electronics saturation migration rate high (being 2.5 times of Si) and breakdown electric field height (are Si
5 times of 10 times or GaAs) etc. properties.SiC single crystal material can satisfy electronic device to high temperature, high pressure, high frequency, powerful
Demand, and SiC single crystal material has irreplaceable advantage in the extreme environments application field such as space flight, military project, nuclear energy, compensates for
The defect of conventional semiconductor material device in practical applications, is increasingly becoming the mainstream of power semiconductor.
This important technique of Wafer Dicing involved in semiconductor chip packaging process is made, and mainly utilizes diamond tool
The mechanical stress of piece or the photic heat effect of laser make wafer carry out cutting operation by fixed cutting-up track, are finally reached unit
The technological effect of wafer separate.With the gradually promotion of chip integration and performance requirement, diamond blade cutting is poor because of its
Cut quality (residue splash, crackle etc.) can not meet the quality requirements of Wafer Dicing；Laser as noncontact processing
Scribing has obtained more and more concerns and application.There are mainly two types of process means for laser scribing currently on the market: (1) laser is complete
Cut (Laser Full Cut)；(2) (Stealth Dicing, SD)+sliver is cut in laser stealth.The full cutting process of laser is mainly
It being acted on using the hot melt of laser, direct multitool cuts off wafer, and Cutting Road width is larger, it is not suitable for small core particles cutting, and
And Cutting Road edge surface has volcanic crater packing phenomenon, influences the service performance of wafer.Laser stealth cutting is saturating using laser
It crosses crystal column surface and fire check is formed by heat effect inside it, through mechanical sliver by wafer separate.The side of laser stealth cutting
Method Cutting Road is relatively narrow, is suitable for retrofit, but a usual Cutting Road will carry out 5~10 times or so cutting (specific cuttings
Number is mainly determined with wafer thickness), cutting efficiency is lower.
Summary of the invention
Based on this, it is necessary to which for the problem that semiconductor devices cut quality is poor, processing efficiency is low, provides one kind and half-and-half leads
The cutting of body device is more smooth, and the semiconductor laser processing unit (plant) without obvious chipping and residue splash phenomena.
A kind of semiconductor laser processing unit (plant), comprising:
Laser cutting mechanism, including first laser device and first laser reshaper, the first of the first laser device transmitting
Laser beam is collimated through the first laser reshaper, after focus processing, is cut to workpiece laser；
Laser sliver mechanism, including second laser and second laser reshaper, the second of the second laser transmitting
Laser beam cuts the workpiece laser after the second laser reshaper is shaped as the collimated light beam of at least two beams focusing
Position sliver；And
Driving mechanism drives the workpiece to corresponding Working position.
Above-mentioned semiconductor laser processing unit (plant) is cut by laser inside workpiece by laser cutting mechanism, recycles and drives
Workpiece is transferred to the Working position of laser sliver mechanism by motivation structure, and is carried out photic heat to the workpiece after cutting by laser and added
Work makes vertical direction separation of the workpiece along the position of laser cutting, completes the laser machining operation of workpiece.The present invention cuts laser
It cuts and is combined with laser sliver, compared to traditional diamond tool sheet cutting equipment, there is preferably processing quality, and laser adds
The precision of work is higher, can be satisfied with the quality requirement of micro element and high-accuracy device；Compared to laser stealth cutting and machinery
The equipment that sliver combines, processing efficiency with higher, simultaneously because noncontact procession when sliver, also there is higher split
Tablet quality.Integrated two kinds of lasers different processing characteristic and advantage, the preparation flow of two kinds of laser aids of free switching, thus
So that the present invention has the features such as higher processing quality and processing efficiency, it is suitable for semiconductor assembly and test field.
In one of the embodiments, the first laser device be infrared picosecond laser, wavelength be 1064nm~
1342nm, pulse width < 10ps, repetition rate are 400KHz~1000KHz, average output power≤25W, maximum impulse energy
Measure 25 μ J.It is more preferable to the laser cutting effect of workpiece.
The second laser is CO2 laser in one of the embodiments, and wavelength is 9.3 μm~9.6 μm, arteries and veins
Rushing width is 50ns~150ns, and output power >=85W exports 4.0 ± 0.2mm of spot diameter.The sliver of workpiece is acted on more
It is good.
In one of the embodiments, the first laser reshaper include the first beam expanding lens, first reflection microscope group, just thoroughly
Mirror and focusing microscope group, the enlarged-diameter for the first laser light beam that first beam expanding lens emits the first laser device are described
The first laser light beam after enlarged-diameter is reflexed to the positive lens by the first reflection microscope group, and the first laser light beam is saturating
It crosses after the positive lens by being cut by laser on the focusing microscope group focusing illumination to the workpiece.
The first laser reshaper further includes third reflecting mirror in one of the embodiments, the focusing microscope group packet
The first focus lamp and the second focus lamp are included, the first laser light beam that first focus lamp will transmit through the positive lens is poly-
Coke, and reflex to second focus lamp by the third reflecting mirror, second focus lamp is by the first laser light beam
It is irradiated on the workpiece after focusing again.
The positive lens is axicon lens in one of the embodiments, and the apex angle of the axicon lens is 160 °~178 °；Institute
Stating the first focus lamp is focusing objective len, the amplification factor of the focusing objective len is 10 ×~50 ×；The coke of second focus lamp
Away from for 100mm~160mm.
The second laser includes the second beam expanding lens, the second reflection microscope group, diffraction optics in one of the embodiments,
The diameter of element and tertiary focusing mirror, the second laser light beam that second beam expanding lens emits the second laser expands
Greatly, the second laser light beam after enlarged-diameter is reflexed to the diffraction optical element by the second reflection microscope group, described
Diffraction optical element is by the second laser beam shaping at least two beam collimated light beams, and at least two beam collimated light beams are through institute
The position after being irradiated to the workpiece laser cutting after tertiary focusing mirror focuses is stated, and separates the workpiece.
The focal length of the tertiary focusing mirror is 20mm~60mm in one of the embodiments, and at least two beams are parallel
The diameter for the hot spot that light beam is formed after tertiary focusing mirror focusing is 50 μm~150 μm.
The laser cutting mechanism cuts the workpiece laser in one of the embodiments, makes the inside workpiece
A plurality of Cutting Road is formed, respectively to two Cutting Road laser slivers after at least two beam collimated light beams focusing.
It in one of the embodiments, further include the first CCD monitoring system and/or the 2nd CCD monitoring system, described first
CCD monitoring system is electrically connected with the first laser device, the driving mechanism respectively, and for the cutting position to the workpiece
It is accurately positioned and is monitored, the first laser device is adjusted according to the monitoring information of the first CCD monitoring system to institute
State the position of workpiece laser irradiation, the driving mechanism is according to the monitoring information of the first CCD monitoring system by the workpiece
It is moved to corresponding position；The 2nd CCD monitoring system is electrically connected with the second laser, the driving mechanism respectively,
And for the sliver position of the workpiece accurately to be positioned and monitored, the second laser is according to the 2nd CCD
The monitoring information of monitoring system adjusts the position irradiated to the workpiece laser, and the driving mechanism is supervised according to the 2nd CCD
The workpiece is moved to corresponding position by the monitoring information of control system.It can control movement of the workpiece on horizontal and vertical,
Realize conversion of the workpiece from laser cutting processing procedure to laser sliver processing procedure, and realize to the laser cuttings of workpiece all angles or
Laser sliver, to realize the accurate processing to entire workpiece.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of one embodiment of semiconductor laser processing unit (plant) of the present invention；
Fig. 2 is that the first laser reshaper in semiconductor laser processing unit (plant) shown in Fig. 1 illustrates the effect of beam shaping
Figure；
Fig. 3 is effect diagram of the positive lens in semiconductor laser processing unit (plant) shown in Fig. 1 to beam shaping；
Fig. 4 is that the first bessel beam that positive lens shaping shown in Fig. 3 goes out acts on the effect diagram on workpiece；
Fig. 5 is that the second laser reshaper in semiconductor laser processing unit (plant) shown in Fig. 1 illustrates the effect of beam shaping
Figure；
Fig. 6 (a) is that the sliver process of workpiece is illustrated by the laser sliver mechanism in semiconductor laser processing unit (plant) shown in Fig. 1
Figure one；
Fig. 6 (b) is that the sliver process of workpiece is illustrated by the laser sliver mechanism in semiconductor laser processing unit (plant) shown in Fig. 1
Figure two；
Fig. 6 (c) is that the sliver process of workpiece is illustrated by the laser sliver mechanism in semiconductor laser processing unit (plant) shown in Fig. 1
Figure three；
Fig. 7 (a) is semiconductor laser processing unit (plant) shown in Fig. 1 to the effect diagram after workpiece laser cutting and sliver
One；
Fig. 7 (b) is semiconductor laser processing unit (plant) shown in Fig. 1 to the effect diagram after workpiece laser cutting and sliver
Two；
Fig. 8 is the cutting after the laser cutting mechanism in semiconductor laser processing unit (plant) shown in Fig. 1 cuts workpiece laser
The effect diagram in gap；
Fig. 9 is the laser sliver mechanism in semiconductor laser processing unit (plant) shown in Fig. 1 to the cutting after workpiece laser sliver
Section effect diagram.
In attached drawing, parts list represented by the reference numerals are as follows:
10, semiconductor laser processing unit (plant)；101, first laser device；102, first laser light beam；103, the first beam expanding lens；
104, positive lens；105, the first reflection microscope group；106, third reflecting mirror；107, the first focus lamp；108, the second focus lamp；109,
First CCD monitoring system；110, the first bessel beam；200, workpiece；301, second laser；302, second laser light beam；
303, the second beam expanding lens；304, the second reflection microscope group；305, diffraction optical element；306, tertiary focusing mirror；307, optical gate；308,
4th reflecting mirror；309, the 2nd CCD monitoring system；310, the second bessel beam；311, Cutting Road；312, blue film；400, it drives
Motivation structure；401, Biaxial linear motor；402, motion stage.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.Many details are explained in the following description in order to fully understand this hair
It is bright.But the invention can be embodied in many other ways as described herein, those skilled in the art can be not
Similar improvement is done in the case where violating intension of the present invention, therefore the present invention is not limited to the specific embodiments disclosed below.
It should be noted that it can directly on the other element when element is referred to as " being fixed on " another element
Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it, which can be, is directly connected to
To another element or it may be simultaneously present centering elements.Term as used herein " vertical ", " horizontal ", " left side ",
" right side " and similar statement for illustrative purposes only, are not meant to be the only embodiment.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Each technical characteristic of embodiment described above can carry out arbitrarily
Combination, for simplicity of description, it is not all possible to each technical characteristic in above-described embodiment combination be all described, so
And as long as there is no contradiction in the combination of these technical features, it all should be considered as described in this specification.
Referring to Fig. 1, in one embodiment, semiconductor laser processing unit (plant) 10 includes: laser cutting mechanism, laser sliver
Mechanism and driving mechanism 400.Laser cutting mechanism includes first laser device 101 and first laser reshaper, first laser device 101
The first laser light beam 102 of transmitting is collimated through first laser reshaper, after focus processing, is cut by laser to workpiece 200.Laser is split
Piece mechanism includes second laser 301 and second laser reshaper, and the second laser light beam 302 that second laser 301 emits passes through
After second laser reshaper is shaped as the collimated light beam of at least two beams focusing, to 200 laser cutting position sliver of workpiece.It is processing
In the process, it drives workpiece 200 to be transformed into different positions by driving mechanism 400 to be processed, and laser cutting mechanism is to workpiece
After the completion of 200 laser cuttings, the position that workpiece 200 is transferred to laser sliver mechanism is carried out at sliver by driving mechanism 400
Reason realizes the automatic switchover processed to workpiece 200, substantially increases the processing efficiency to workpiece 200.In practical applications, first
Workpiece 200 is cut by laser by laser cutting mechanism, recycles driving mechanism 400 that workpiece 200 is transferred to laser sliver
The Working position of mechanism, and photic hot-working is carried out to the workpiece 200 after cutting by laser sliver mechanism, make 200 edge of workpiece
The vertical direction of the position of laser cutting separates, and completes the laser machining operation of workpiece 200.The present invention will be cut by laser and laser
Sliver combines, and compared to traditional diamond tool sheet cutting equipment, has preferably processing quality, and the precision laser machined
It is higher, the quality requirement of micro element and high-accuracy device can be satisfied with；Compared to laser stealth cutting in conjunction with mechanical sliver
Equipment, processing efficiency with higher, simultaneously because noncontact procession when sliver, also there is higher sliver quality.
Integrated two kinds of lasers different processing characteristic and advantage, the preparation flow of two kinds of laser aids of free switching, so that this
Invention has the features such as higher processing quality and processing efficiency, is suitable for semiconductor assembly and test field.
In one embodiment, workpiece 200 can be wafer, specifically can be Si wafer or SiC wafer.The
One laser 101 is infrared picosecond laser, and wavelength is 1064nm~1342nm, pulse width < 10ps, and repetition rate is
400KHz~1000KHz, average output power≤25W, 25 μ J of maximum impulse energy.Second laser 301 is CO2Laser,
Its wavelength be 9.3 μm~9.6 μm, pulse width be 50ns~150ns, output power >=85W, outlet spot diameter 4.0 ±
0.2mm。CO2The Submillineter Wave Technology that laser issues has very high photo-thermal effect, and Si wafer and SiC wafer are to wavelength
The absorptivity of the Submillineter Wave Technology of λ=9.3 μm~9.6 μm is higher (> 70%).Driving mechanism 400 can drive workpiece 200 to rotate.
In one embodiment, first laser reshaper include the first beam expanding lens 103, first reflection microscope group 105, just thoroughly
Mirror 104 and focusing microscope group.The enlarged-diameter for the first laser light beam 102 that first beam expanding lens 103 emits infrared picosecond laser,
First laser light beam 102 after enlarged-diameter is reflexed to positive lens 104 by the first reflection microscope group 105, and first laser light beam 102 is saturating
It crosses after positive lens 104 and is cut by laser on microscope group focusing illumination to workpiece 200 by focusing.First reflection microscope group 105 can be with
Including two 45 ° of reflecting mirrors, the first laser light beam 102 after enlarged-diameter is irradiated on 45 ° of reflecting mirrors, is then reflexed to
On another 45 ° of reflecting mirrors, light beam is reflexed into positive lens 104 by second 45 ° of reflecting mirror.
On the basis of the above embodiments, first laser reshaper further includes third reflecting mirror 106, and focusing microscope group includes the
One focus lamp 107 and the second focus lamp 108.The first laser light beam 102 that first focus lamp 107 will transmit through positive lens 104 focuses,
And the second focus lamp 108 is reflexed to by third reflecting mirror 106, the second focus lamp 108 focuses first laser light beam 102 again
After be irradiated on workpiece 200, and to carrying out cutting processing inside workpiece 200.Specifically, positive lens 104 is axicon lens, and third is anti-
Penetrating mirror 106 can be 45 ° of reflecting mirrors.
Referring to Fig. 2, the first laser light beam 102 that infrared picosecond laser issues is Gaussian beam, pass through axicon lens
After form the first bessel beam 110, the apex angle of axicon lens is 160 °~178 °, and the first bessel beam 110 is focused through first
108 focussing force of mirror 107 and the second focus lamp so that 110 length of the first bessel beam meets process requirements.Wherein, first
Focus lamp 107 be focusing objective len, amplification factor be 10 ×~50 ×, numerical aperture (NA) be 0.4 ± 0.2；Second focus lamp 108
Focal length between 100mm~160mm, it is ensured that 110 length of the first bessel beam after focusing is 0.2mm~1.2mm.
Referring to Fig. 3, first laser light beam 102 forms the first bessel beam 110, the first shellfish after positive lens 104
Sai Er light beam 110 length L in the vertical direction and width r horizontally, meet following formula 1. with formula 2.:
Formula is 1.:
Formula is 2.:
Wherein, w is the spot diameter being incident on axicon lens；λ is lambda1-wavelength；θ be refraction after up and down two-beam it
Between optical axis included angle (related with the refractive index of apex angle and axicon lens).
Referring to Fig. 4, when the first bessel beam 110 is acted on workpiece 200, because the first bessel beam 110 is in work
The difference of refractive index and aerial refractive index in part 200, leads to first Bezier of the practical function inside workpiece 200
Light beam 110 is different from 110 length of the first bessel beam propagated in air.In the first bessel beam 110 to workpiece 200
Under internal laser action, Cutting Road can be formed inside workpiece 200.By taking soda-lime glass sample (refractive index n=1.5) as an example:
Assuming that the length lambda that the first bessel beam 110 is propagated in air1=0.8mm, then the first shellfish plug in soda-lime glass sample
That 110 length of light beam: λ2=n × λ1=1.5 × 0.8mm=1.2mm.
In order to enable it is more accurate to the laser cutting of workpiece 200, it further include the first CCD monitoring system 109, the first CCD
Monitoring system 109 is electrically connected with first laser device 101, driving mechanism 400 respectively, and for the cutting position of workpiece 200 into
Row is accurately positioned and is monitored.First laser device 101 is adjusted according to the monitoring information of the first CCD monitoring system 109 to workpiece 200
Workpiece 200 is moved to accordingly by the position of laser irradiation, driving mechanism 400 according to the monitoring information of the first CCD monitoring system 109
Position.It needs, the first CCD monitoring system 109 can be set in the top of third reflecting mirror 106, and anti-with third
Penetrate the coaxial arrangement of mirror 106.
Please continue to refer to Fig. 1, in one embodiment, second laser reshaper includes that the second beam expanding lens 303, second is anti-
Penetrate microscope group 304, diffraction optical element 305 and tertiary focusing mirror 306.Second beam expanding lens 303 is by CO2The second of laser transmitting swashs
Second laser light beam 302 after enlarged-diameter is reflexed to diffraction light by the enlarged-diameter of light light beam 302, the second reflection microscope group 304
Element 305 is learned, second laser light beam 302 is shaped at least two beam collimated light beams by diffraction optical element 305, and at least two beams are parallel
Light beam is irradiated to the position after workpiece 200 is cut by laser after the focusing of tertiary focusing mirror 306, and makes workpiece 200 along Cutting Road point
From.
On the basis of the above embodiments, second laser reshaper further includes optical gate 307 and the 4th reflecting mirror 308.Second
Reflecting microscope group 304 may include two 45 ° of reflecting mirrors, CO2The second laser light beam 302 of laser transmitting is after optical gate 307
It is irradiated on first 45 ° of reflecting mirror, second laser light beam 302 is reflected into the second beam expanding lens by first 45 ° of reflecting mirror
303, the second laser light beam 302 after the second beam expanding lens 303 expands is reflected into the 4th reflecting mirror by second 45 ° of reflecting mirror
308, second laser light beam 302 is reflected into diffraction optical element 305 again by the 4th reflecting mirror 308, and second laser light beam 302 is through spreading out
Penetrating to focus by tertiary focusing mirror 306 and expose to workpiece 200 after 305 shaping of optical element needs on the position of sliver.Specifically,
4th reflecting mirror 308 is also possible to 45 ° of reflecting mirrors, and diffraction optical element 305 is double track DOE diffraction optical element, second laser
Light beam 302 is Submillineter Wave Technology.The collimation Gauss that can will be expanded through the second beam expanding lens 303 by double track DOE diffraction optical element
Hot spot is divided into the consistent parallel hot spot of at least two Energy distributions by principle of diffraction optics, is ultimately applied to 200 surface of workpiece
On, and sliver is carried out to two Cutting Roads on workpiece 200.The spacing distance of at least two hot spots horizontally can basis
The focal length of the distance between double track DOE diffraction optical element and tertiary focusing mirror 306 and tertiary focusing mirror 306 is adjusted, can
To realize laser two-orbit cutting operation simultaneously, complete to mention cutting efficiency the laser cutting of 200 two positions in inside of workpiece
Rise one times.Tertiary focusing mirror 306 can be short focal length focusing len, and focal range is 20mm~60mm, it is ensured that focuses laser
Hot spot is smaller, and energy per unit area density is larger, increases sliver efficiency.
Referring to Fig. 5, CO2The second laser light beam 302 (λ=9.3 μm~9.6 μm) that laser issues is through diffraction optics member
After part 305 and tertiary focusing mirror 306 act on, identical second bessel beam 310 of two beam sizes is generated, and irradiated respectively in work
On two Cutting Roads 311 of part 200, and two the second bessel beams of beam, 310 Energy distribution and power are close to consistent.Third
The focal length of focus lamp 306 is F=20mm~60mm, and focal beam spot diameter is between 50 μm~150 μm.Two beam the second Bezier light
The optical axis included angle of beam 310 mainly with diffraction optical element 305 itself design and second laser light beam 302 incidence wave with
It closes, the spacing and tertiary focusing mirror between two luminous points that two the second bessel beams of beam 310 are formed on 200 surface of workpiece
306 operating distance to 200 surface of workpiece is related.Can by regulate and control double track DOE diffraction optical element coating designs and
The focal length of tertiary focusing mirror 306 irradiates spacing a between two luminous points on 200 surface of workpiece to control.In concrete operations,
After two the second bessel beams of beam 310 are to 311 sliver of Cutting Road of the first position and the second position inside workpiece 200, pass through
Driving mechanism 400 drives workpiece 200 horizontally to move the distance of 2a, continues by two beam the second bessel beams 310 to workpiece
The Cutting Road 311 of the third place and the 4th position inside 200 carries out sliver, up to completion workpiece 200 owning horizontally
The sliver of Cutting Road 311.Followed by the sliver to the longitudinal Cutting Road 311 of workpiece 200, driven by driving mechanism 400
Part 200 of starting building rotates 90 °, and continues all Cutting Roads 311 longitudinal to workpiece 200 by two the second bessel beams of beam 310
Sliver is carried out, until completing whole sliver processing procedure after all Cutting Roads 311 are all carried out laser irradiation sliver.Such method
The sliver of two Cutting Roads 311 can be carried out simultaneously, to reach two times of processing efficiency.
CO2The Submillineter Wave Technology that laser issues generates two after diffraction optical element 305 and tertiary focusing mirror 306 act on
The second bessel beam of beam 310.Fig. 6 (a) is please referred to, wherein the irradiation of a branch of second bessel beam 310 is at one of workpiece 200
On the surface of Cutting Road 311.Fig. 6 (b) is please referred to, Submillineter Wave Technology irradiates when on 311 surface of Cutting Road, in Cutting Road 311
Inside generates a large amount of heat, and can generate thermal expansion and cold contraction effect relative to extraneous lower temperature environment, inside workpiece 200,
Under the action of second bessel beam 310, the both ends of Cutting Road 311 along the vertical direction can be cracked, and be split to both sides extension
It opens, is finally separated in the vertical position of Cutting Road 311, to reach sliver effect.Please refer to Fig. 6 (c), it, will after the completion of sliver
Blue film 312 (paste and carrier) expand and touches processing, workpiece 200 understand with blue film 312 stress horizontally to the left and right
Both sides movement, so that the completion of workpiece 200 is completely separated and obtains unit grain.It should be noted that workpiece 200 is pasted in indigo plant
Behind the surface of film 312, then it is installed on workbench.After completing the sliver process to workpiece 200, blue film 312 is taken out, and
It places to expand on film machine and carries out expansion film.
As shown in Fig. 7 (a), for the appearance of upper surface after wafer cutting.The wafer is semiconductor integrated circuit circle dress
Chip (including 8 inches and 12 inches) transversely has a plurality of first Cutting Road on surface, there is a plurality of second Cutting Road along longitudinal direction,
A plurality of first Cutting Road is mutually perpendicular to a plurality of second Cutting Road, so that chip is divided into the single core particles of periodic arrangement.?
In process, it is motionless that laser is fixed on certain position, and driving mechanism 400 drives workpiece 200 horizontally to move, and completes pair
The processing of one the first Cutting Road.Then by the step pitch of the Moving Unit crystal grain in the longitudinal direction of workpiece 200, and complete to Article 2 the
The cutting of one Cutting Road.After processing is completed to all first Cutting Roads, driving mechanism 400 drives workpiece 200 to rotate 90 °, uses phase
Same processing method completes the processing to the second all Cutting Roads.Sliver technique uses identical processing method, utilizes platform
The mobile laser sliver processing procedure for completing full wafer wafer.As shown in Fig. 7 (b), rear wafer surface appearance diagram, wafer are touched to expand
Grain can be kept completely separate and proper alignment.
Further, the laser cutting effect of wafer controls as shown in figure 8, being cut by laser slit width at 12 μm or so, and
Without obvious chipping and residue splash phenomena.As shown in figure 9, through CO2After laser device laser thermofission, cutting section is returned without obvious
Melt and dross phenomenon, can be directly separated as unit core particles, in diagram, unit distance is 50 μm.
It can also include the 2nd CCD monitoring system 309 in order to enable the laser sliver to workpiece 200 is more accurate, second
CCD monitoring system 309 is electrically connected with second laser 301, driving mechanism 400 respectively, and for the sliver position to workpiece 200
It is accurately positioned and is monitored, second laser 301 is adjusted according to the monitoring information of the 2nd CCD monitoring system 309 to workpiece
Workpiece 200 is moved to by the position of 200 laser irradiations, driving mechanism 400 according to the monitoring information of the 2nd CCD monitoring system 309
Corresponding position.
In a specific embodiment, driving mechanism 400 includes Biaxial linear motor 401 and motion stage 402, motion stage
402 link with Biaxial linear motor 401, and motion stage 402 can be rotated relative to Biaxial linear motor 401, and workpiece 200 is set to fortune
On dynamic load platform 402, Biaxial linear motor 401 drives motion stage 402 that workpiece 200 is driven to move along the vertical and lateral and carries out laser
Cutting or sliver.This set of driving mechanism 400 can control movement of the workpiece 200 on horizontal and vertical, realize workpiece
200 conversion from laser cutting processing procedure to laser sliver processing procedure, and realize the laser cutting to 200 all angles of workpiece or swash
Light sliver, to realize the accurate processing to entire workpiece 200.
Semiconductor laser processing unit (plant) 10 of the invention is changed inside wafer by Bezier shaping beam system
After system processing, wafer print is moved to sliver apparatus machining position by rail transport apparatus, then recycles Submillineter Wave Technology pair
The wafer of internal reform carries out photic hot-working, makes wafer along the vertical direction separation where restructuring cutting position, completes
Wafer separate operation.The problems such as present invention has processing quality good, no splashing, crackle, volcanic crater accumulation, processing efficiency is higher,
Two kinds of processing unit (plant) integration integrations can be realized manufacturing process automation cutting.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of semiconductor laser processing unit (plant) characterized by comprising
Laser cutting mechanism, including first laser device and first laser reshaper, the first laser of the first laser device transmitting
Light beam is collimated through the first laser reshaper, after focus processing, is cut to workpiece laser；
Laser sliver mechanism, including second laser and second laser reshaper, the second laser of the second laser transmitting
Light beam is after the second laser reshaper is shaped as the collimated light beam of at least two beams focusing, to the workpiece laser cutting position
Sliver；And
Driving mechanism drives the workpiece to corresponding Working position.
2. semiconductor laser processing unit (plant) according to claim 1, which is characterized in that the first laser device is infrared skin
Second laser, wavelength are 1064nm~1342nm, and pulse width < 10ps, repetition rate is 400KHz~1000KHz, average
Output power≤25W, 25 μ J of maximum impulse energy.
3. semiconductor laser processing unit (plant) according to claim 1, which is characterized in that the second laser is CO2Laser
Device, wavelength be 9.3 μm~9.6 μm, pulse width be 50ns~150ns, output power >=85W, outlet spot diameter 4.0 ±
0.2mm。
4. semiconductor laser processing unit (plant) according to claim 1, which is characterized in that the first laser reshaper includes
First beam expanding lens, the first reflection microscope group, positive lens and focusing microscope group, what first beam expanding lens emitted the first laser device
The first laser light beam after enlarged-diameter is reflexed to institute by the enlarged-diameter of first laser light beam, the first reflection microscope group
State positive lens, the first laser light beam penetrates after the positive lens by the focusing microscope group focusing illumination to the workpiece
It is cut by laser.
5. semiconductor laser processing unit (plant) according to claim 4, which is characterized in that the first laser reshaper also wraps
Third reflecting mirror is included, the focusing microscope group includes the first focus lamp and the second focus lamp, and first focus lamp will transmit through described
The first laser light beam of positive lens focuses, and reflexes to second focus lamp by the third reflecting mirror, and described the
Two focus lamps are irradiated on the workpiece after focusing the first laser light beam again.
6. semiconductor laser processing unit (plant) according to claim 5, which is characterized in that the positive lens is axicon lens, institute
The apex angle for stating axicon lens is 160 °~178 °；First focus lamp is focusing objective len, and the amplification factor of the focusing objective len is
10 ×~50 ×；The focal length of second focus lamp is 100mm~160mm.
7. semiconductor laser processing unit (plant) according to claim 1, which is characterized in that the second laser includes second
Beam expanding lens, the second reflection microscope group, diffraction optical element and tertiary focusing mirror, second beam expanding lens send out the second laser
The enlarged-diameter for the second laser light beam penetrated, described second reflects microscope group for the second laser light beam after enlarged-diameter
The diffraction optical element is reflexed to, the diffraction optical element is by the second laser beam shaping at least two beam directional lights
Beam, at least two beam collimated light beams are irradiated to the position after the workpiece laser cutting after tertiary focusing mirror focusing,
And separate the workpiece.
8. semiconductor laser processing unit (plant) according to claim 7, which is characterized in that the focal length of the tertiary focusing mirror is
20mm~60mm, the diameter of hot spot that at least two beam collimated light beams are formed after tertiary focusing mirror focusing is 50 μm~
150μm。
9. semiconductor laser processing unit (plant) according to claim 7, which is characterized in that the laser cutting mechanism is to described
Workpiece laser cutting makes the inside workpiece form a plurality of Cutting Road, respectively to two after at least two beam collimated light beams focusing
Cutting Road laser sliver described in item.
10. semiconductor laser processing unit (plant) according to any one of claims 1 to 9, which is characterized in that further include first
CCD monitoring system and/or the 2nd CCD monitoring system, the first CCD monitoring system respectively with the first laser device, described
Driving mechanism electrical connection, and for the cutting position of the workpiece accurately to be positioned and monitored, the first laser device
The position irradiated to the workpiece laser, the driving mechanism root are adjusted according to the monitoring information of the first CCD monitoring system
The workpiece is moved to corresponding position according to the monitoring information of the first CCD monitoring system；The 2nd CCD monitoring system
It is electrically connected with the second laser, the driving mechanism, and is carried out accurately for the sliver position to the workpiece respectively
Positioning and monitoring, the second laser are adjusted according to the monitoring information of the 2nd CCD monitoring system to the workpiece laser
The workpiece is moved to accordingly by the position of irradiation, the driving mechanism according to the monitoring information of the 2nd CCD monitoring system
Position.
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| CN111151895A (en) * | 2020-01-13 | 2020-05-15 | 大族激光科技产业集团股份有限公司 | Process and system for cutting transparent material by utilizing filamentation effect |
| CN113371989A (en) * | 2021-05-26 | 2021-09-10 | 苏州镭明激光科技有限公司 | Splitting method and splitting device for semiconductor chip |
| CN113698086A (en) * | 2020-05-19 | 2021-11-26 | 大族激光科技产业集团股份有限公司 | Glass panel splitting method and device |
| CN114083155A (en) * | 2021-12-31 | 2022-02-25 | 杭州银湖激光科技有限公司 | Method for laser cutting silicon wafer |
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