CN105458517A - Wafer laser scribing and fission method and system - Google Patents
Wafer laser scribing and fission method and system Download PDFInfo
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- CN105458517A CN105458517A CN201510896219.9A CN201510896219A CN105458517A CN 105458517 A CN105458517 A CN 105458517A CN 201510896219 A CN201510896219 A CN 201510896219A CN 105458517 A CN105458517 A CN 105458517A
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- wafer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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Abstract
The embodiment of the invention discloses a wafer laser scribing and fission method and system. The system comprises a rack and an industrial personal computer; a laser device, a coating device for coating aluminum nano particles, a CCD positioning device and a machining platform for bearing wafers are connected to the industrial personal computer and arranged on the rack; the system is adopted to machine wafers such as glass and sapphire, the high-quality high-efficiency scribing and fission technology can be achieved, and the wafers can be machined into figures in any shape. The equipment and process are simple, the wafer scribing and fission technology can be completed in an assembly line manner; and the method and system in the embodiment have the beneficial effects of being high in generality and high in machining quality and are particularly suitable for machining round wafers with radians and the like.
Description
Technical field
The present invention relates to wafer laser scribing and sliver technical field, particularly relate to a kind of wafer laser scribing and splinter method and system.
Background technology
Wafer is widely applied to the field such as LED, solar energy, along with more and more higher to the requirement of wafer quality, existing Wafer Dicing and sliver technique have some limitations, especially circle etc. is had to the cell sliver difficulty of radian, as circle etc. has the wafer of radian can only adopt cutting technique, but directly cutting requires higher to LASER Light Source, and wafer quality can be caused poor, as collapsed limit and heat affected area increasing etc., there is bad impact to the performance of wafer and use.
Summary of the invention
Embodiment of the present invention technical problem to be solved is, provides a kind of highly versatile, be particularly useful for circular etc. have a radian wafer laser scribing and splinter method and system.
In order to solve the problems of the technologies described above, the embodiment of the present invention proposes a kind of wafer laser scribing and splinter method, and described method comprises:
Scribing steps: laser scribing is carried out to wafer, cutting-in is between 1/2 to 3/4 of wafer thickness;
Coating step: at scribe region coated with aluminum nano particle, make it fill dicing cut completely; And
Sliver step: carry out laser irradiation to the aluminum nanoparticles at dicing cut place, utilizes the heat release of thermit reaction to realize sliver.
Further, also comprise after sliver step:
Cleaning step: clean the wafer after sliver, to remove residual aluminum nanoparticles coating.
Further, also alignment procedures is comprised between scribing steps and coating step: the position detecting wafer offsets and transmits corresponding shifted signal; Accordingly, in coating step, according to shifted signal adjustment coating unit to carry out aluminum nanoparticles coating in scribe region.
Further, in coating step, adopt micro-straightly to write or the mode of micro-spray applies.
Further, in sliver step, adopt the mode of focusing or out of focus to carry out laser irradiation, corresponding spot diameter is greater than the Breadth Maximum of dicing cut.
Correspondingly, the embodiment of the present invention additionally provides a kind of wafer laser scribing and lobe system, described wafer laser scribing and lobe system comprise frame and industrial computer, and frame is provided with the laser instrument, the coating unit of coated with aluminum nano particle, CCD positioner and the processing platform for carrying wafer that are connected to industrial computer.
Further, described laser instrument is two that launch identical wavelength laser, and the laser of transmitting converges to same light path and exports through same parallel beam expand device, galvanometer field lens assembly.
Further, described laser instrument is two that launch different wave length laser, and the laser of transmitting is respectively by a light path and different parallel beam expand device, the transmission of galvanometer field lens assembly and export.
Further, processing platform is the XY platform moving wafer in the horizontal direction.
Further, described CCD positioner has multiple, and is arranged at correspondingly by galvanometer field lens assembly and coating unit.
The embodiment of the present invention is by proposing a kind of wafer laser scribing and splinter method and system, adopt the otch after coating scribing with filling aluminum nano particle, to carry out the technological means of high-quality processing to wafer, there is highly versatile, technique effect that crudy is high, be particularly useful for the processing having the wafer of radian such as circular.
Accompanying drawing explanation
Fig. 1 is the wafer laser scribing of one embodiment of the invention and the structural representation of lobe system.
Fig. 2 is the wafer laser scribing of another embodiment of the present invention and the structural representation of lobe system.
Fig. 3 is wafer laser scribing and the splinter method flow chart of one embodiment of the invention.
Fig. 4 is the wafer laser scribing of the embodiment of the present invention and the scribing processes schematic diagram of splinter method.
Fig. 5 is the dicing cut schematic diagram of the wafer of the embodiment of the present invention.
Fig. 6 is laser irradiation process schematic diagram in the sliver step of the embodiment of the present invention.
Fig. 7 is sliver effect schematic diagram in the sliver step of the embodiment of the present invention.
Fig. 8 is wafer laser scribing and the splinter method flow chart of another embodiment of the present invention.
Drawing reference numeral explanation
Wafer 10
Industrial computer 20
Laser instrument 30
Coating unit 40
CCD positioner 50
Processing platform 60
Galvanometer field lens assembly 70
Parallel beam expand device 80
Laser beam 200
Speculum 901
Semi-permeable and semi-reflecting mirror 902
Scribing steps S1
Alignment procedures S11
Coating step S2
Positioning step S22
Sliver step S3
Cleaning step S4.
Detailed description of the invention
It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can be combined with each other, and are described in further detail the present invention below in conjunction with the drawings and specific embodiments.
If there is directionality to indicate (such as up, down, left, right, before and after in the embodiment of the present invention ...) only for explaining the relative position relation, motion conditions etc. under a certain particular pose (as shown in drawings) between each parts, if when this particular pose changes, then directionality instruction also correspondingly changes thereupon.
Please refer to Fig. 1 and Fig. 2, wafer 10 laser scribing of the embodiment of the present invention and lobe system comprise frame (scheming not shown) and industrial computer 20, and frame is provided with the laser instrument 30, the coating unit 40 of coated with aluminum nano particle, CCD positioner 50 and the processing platform 60 for carrying wafer 10 that are connected to industrial computer 20.
Preferably, the laser beam 200 that described laser instrument 30 exports is identical with the coating direction of described coating unit 40, namely all towards wafer 10 direction, facilitates the coating after scribing.Processing platform 60 is the XY platform moving wafer 10 in the horizontal direction.Laser instrument 30 adopts to be launched continuously or the laser instrument of Long Pulse LASER light beam.Wafer 10 described in the embodiment of the present invention is sapphire, glass or silicon.
As a kind of embodiment, as shown in Figure 1, described laser instrument 30 is two that launch identical wavelength laser, and the laser of transmitting converges to same light path by speculum 901 and semi-permeable and semi-reflecting mirror 902 and exports through same parallel beam expand device 80, galvanometer field lens assembly 70.As another kind of embodiment, as shown in Figure 2, be two that launch different wave length laser with a upper embodiment unlike, described laser instrument 30, the laser of transmitting transmits respectively by a light path and different parallel beam expand devices 80, galvanometer field lens assembly 70 and exports.Preferably, CCD positioner 50 has multiple, and is arranged at galvanometer field lens assembly 70 and coating unit 40 side correspondingly.
Please refer to Fig. 3, corresponding wafer 10 laser scribing and splinter method comprise following several step.
Scribing steps S1: as shown in Figure 4 and Figure 5, carries out laser scribing to wafer 10, and cutting-in is between 1/2 to 3/4 of wafer 10 thickness, so that follow-up sliver, can not cause collapsing that limit causes is bad, cutting-in is preferably 2/3 of wafer 10 thickness.Preferably, the laser instrument 30 of employing is short pulse duration or ultrashort pulse width laser device, and wavelength is between 266nm ~ 1064nm, and according to the wavelength that wafer 10 Material selec-tion adapts.Preferably, laser entrance face scribing or the back side is adopted to carry out scribing to transparent wafer 10 material.
Coating step S2: in scribe region coated with aluminum nano particle (aluminum nanoparticles is as shown in the shadow region of Fig. 6), make it fill dicing cut completely.Preferably, micro-straightly to write or the mode of micro-spray applies is adopted.Certainly, it will be appreciated by persons skilled in the art that coating step S2 also can adopt other thermal response materials such as thermite mixture etc. to reach same effect.
Sliver step S3: as shown in Figure 6 and Figure 7, adjustment laser beam 200 also carries out laser irradiation to the aluminum nanoparticles at dicing cut place, utilizes the heat release of thermit reaction to realize sliver.Preferably, adopt the mode of focusing or out of focus (adopting when focal beam spot is less) to carry out laser irradiation, corresponding spot diameter is greater than the Breadth Maximum of dicing cut, and then ensure that heating surface area, and thermal response is fully occurred.Preferably, irradiating the laser instrument 30 adopted is continuous or long-pulse laser, and to make thermal response fully occur, wavelength is between 266nm ~ 1064nm.Wherein, the optical maser wavelength adopted in scribing steps S1 is identical with the optical maser wavelength that sliver step S4 adopts, match with the optical property realizing optical maser wavelength and wafer 10 material selected, and the laser instrument 30 selected matches with concrete crudy, efficiency and cost etc.
As a kind of embodiment, also comprise after wafer 10 laser scribing of the embodiment of the present invention and the sliver step S4 of splinter method:
Cleaning step S4: clean the wafer 10 after sliver, to remove residual aluminum nanoparticles coating.
As a kind of embodiment, please refer to Fig. 8, between scribing steps S1 and coating step S2, also comprise alignment procedures S11: the position detecting wafer 10 offsets and transmits corresponding shifted signal; Accordingly, in coating step S2 and between sliver step S3, also comprise positioning step S22, according to shifted signal adjustment coating unit 40 to carry out aluminum nanoparticles coating in scribe region.It will be appreciated by persons skilled in the art that and can be realized by adjustment XY platform the position adjustment of laser beam 200 and coating unit 40, adjustment ensure that scribing track and sliver irradiate track and/or apply the consistent of track, and precisely, materials are few in coating; Converted products quality is good, and efficiency is high.
As another embodiment of the present invention, as shown in Figure 2, the wavelength of laser instrument 1 and laser instrument 2 can be different, then laser beam is respectively by being applied on wafer 10 after two different light paths, before being wherein positioned at coating unit 40 for the laser instrument 30 of scribing steps S1 and respective optical path, after being positioned at coating unit 40 for the laser instrument of sliver and respective optical path, method corresponding to Fig. 2 case study on implementation system method corresponding with Fig. 1 case study on implementation system is identical, does not repeat at this.
Wafer 10 laser scribing of the embodiment of the present invention and splinter method and system, be particularly useful for fragility wafer, also namely carries out the effect of laser scribing and sliver to fragility wafer more outstanding; Further, relative to the sliver (minimum dimension of common mechanical sliver is about 150 μm) that cannot realize small size wafer 10 that existing mechanical scribing, sliver technique exist; Can only line pattern be split, the sliver that circle etc. has the cell of radian cannot be realized; Cutter life is short, regularly replace cutter; The defects such as yield is lower, have following beneficial effect:
1, any cell figure can be processed, comprise square, circular and arc etc.;
2, the stress avoiding Mechanical Contact to cause is excessive cause to collapse limit etc. bad;
3, any cell size can be processed;
4, instrument and supplies is simple, and the form of streamline completes scribing and sliver operation.
Although illustrate and describe embodiments of the invention, for the ordinary skill in the art, be appreciated that and can carry out multiple change, amendment, replacement and modification to these embodiments without departing from the principles and spirit of the present invention, scope of the present invention is limited by claims and equivalency range thereof.
Claims (10)
1. wafer laser scribing and a splinter method, is characterized in that, described method comprises:
Scribing steps: laser scribing is carried out to wafer, cutting-in is between 1/2 to 3/4 of wafer thickness;
Coating step: at scribe region coated with aluminum nano particle, make it fill dicing cut completely; And
Sliver step: carry out laser irradiation to the aluminum nanoparticles at dicing cut place, utilizes the heat release of thermit reaction to realize sliver.
2. wafer laser scribing as claimed in claim 1 and splinter method, is characterized in that, also comprise after sliver step:
Cleaning step: clean the wafer after sliver, to remove residual aluminum nanoparticles coating.
3. wafer laser scribing as claimed in claim 1 and splinter method, is characterized in that, also comprise alignment procedures between scribing steps and coating step: the position detecting wafer offsets and transmits corresponding shifted signal; Accordingly, in coating step, according to shifted signal adjustment coating unit to carry out aluminum nanoparticles coating in scribe region.
4. wafer laser scribing as claimed in claim 1 and splinter method, is characterized in that, in coating step, adopts micro-straightly to write or the mode of micro-spray applies.
5. wafer laser scribing as claimed in claim 1 and splinter method, is characterized in that, in sliver step, adopt the mode of focusing or out of focus to carry out laser irradiation, corresponding spot diameter is greater than the Breadth Maximum of dicing cut.
6. a wafer laser scribing and lobe system, it is characterized in that, described wafer laser scribing and lobe system comprise frame and industrial computer, and frame is provided with the laser instrument, the coating unit of coated with aluminum nano particle, CCD positioner and the processing platform for carrying wafer that are connected to industrial computer.
7. wafer laser scribing as claimed in claim 6 and lobe system, is characterized in that, described laser instrument is two that launch identical wavelength laser, and the laser of transmitting converges to same light path and exports through same parallel beam expand device, galvanometer field lens assembly.
8. wafer laser scribing as claimed in claim 6 and lobe system, is characterized in that, described laser instrument is two that launch different wave length laser, and the laser of transmitting is respectively by a light path and different parallel beam expand devices, the transmission of galvanometer field lens assembly and export.
9. wafer laser scribing as claimed in claim 6 and lobe system, it is characterized in that, processing platform is the XY platform moving wafer in the horizontal direction.
10. wafer laser scribing as claimed in claim 6 and lobe system, it is characterized in that, described CCD positioner has multiple, and is arranged at correspondingly by galvanometer field lens assembly and coating unit.
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| CN201510896219.9A CN105458517B (en) | 2015-12-08 | 2015-12-08 | Wafer laser scribing and splinter method and system |
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| CN201510896219.9A CN105458517B (en) | 2015-12-08 | 2015-12-08 | Wafer laser scribing and splinter method and system |
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| CN105458517B CN105458517B (en) | 2018-04-13 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109746568A (en) * | 2019-01-30 | 2019-05-14 | 大族激光科技产业集团股份有限公司 | A kind of laser-processing system and laser processing |
| CN110190010A (en) * | 2019-05-17 | 2019-08-30 | 福建兆元光电有限公司 | Semiconductor wafer dicing device and dicing method |
| CN110977186A (en) * | 2019-12-13 | 2020-04-10 | 无锡奥特维科技股份有限公司 | Single crystal battery piece splitting equipment and single crystal battery piece splitting method |
| CN112192772A (en) * | 2020-10-26 | 2021-01-08 | 中国科学院半导体研究所 | Ultrafast laser continuous splitting device and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109746568A (en) * | 2019-01-30 | 2019-05-14 | 大族激光科技产业集团股份有限公司 | A kind of laser-processing system and laser processing |
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| CN110190010B (en) * | 2019-05-17 | 2024-04-23 | 福建兆元光电有限公司 | Semiconductor wafer dicing apparatus and dicing method |
| CN110977186A (en) * | 2019-12-13 | 2020-04-10 | 无锡奥特维科技股份有限公司 | Single crystal battery piece splitting equipment and single crystal battery piece splitting method |
| CN112192772A (en) * | 2020-10-26 | 2021-01-08 | 中国科学院半导体研究所 | Ultrafast laser continuous splitting device and method |
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| CN105458517B (en) | 2018-04-13 |
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Address after: 518000 Shenzhen province science and Technology Park, Nanshan District, North Hill Road, No. two, No. 8, Qing Guang photoelectric building, No. 305 Applicant after: Innovo laser Polytron Technologies Inc Address before: 518000 Shenzhen province science and Technology Park, Nanshan District, North Hill Road, No. two, No. 8, Qing Guang photoelectric building, No. 305 Applicant before: Shenzhen Inno Laser Technology Co., Ltd. |
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