CN207746565U - Quaternary LED wafer is exempted to coat laser surface cutter device - Google Patents
Quaternary LED wafer is exempted to coat laser surface cutter device Download PDFInfo
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- CN207746565U CN207746565U CN201721889277.XU CN201721889277U CN207746565U CN 207746565 U CN207746565 U CN 207746565U CN 201721889277 U CN201721889277 U CN 201721889277U CN 207746565 U CN207746565 U CN 207746565U
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- led wafer
- speculum
- quaternary led
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Abstract
The utility model is related to quaternary LED wafers to exempt to coat laser surface cutter device, the first speculum is arranged in the lens combination light path output of picosecond laser, it is sequentially arranged beam expanding lens on first speculum reflected light path, first polarization wave plate, polarization spectro piece, second speculum, second polarization wave plate, third speculum and laser cutting head, laser cutting head includes one-dimensional laser beam beam splitting element and laser condensing lens, the top of laser condensing lens one-dimensional laser beam beam splitting element is installed by position rotation regulating mechanism, light splitting light-beam position can be adjusted by adjusting position rotation regulating mechanism, the lens combination light path output of laser condensing lens is right against the surface of the quaternary LED wafer product on platform to be processed.Coating protection liquid process can be saved when cutting quaternary LED wafer, effectively promote cutting efficiency；Picosecond laser cutting crystal wafer generates more small-scale heat affected area, and micro-crack, remelting recrystallization can be improved.
Description
Technical field
The utility model is related to a kind of quaternary LED wafers to exempt to coat laser surface cutter device.
Background technology
Currently, at home most LED chip manufactory expand production on a large scale blue green light market background under, the reddish yellow of high brightness
Light LED chip is still irreplaceable in current market position, and on the rise year by year.Quaternary (AlInGaP) chip is
The high brightness reddish yellow optical chip of mainstream at present, best technique are laser cutting and break bar cutting.Current laser cutting parameter
It is broadly divided into four steps, i.e. patch, the coating of protection liquid, laser slotting, cleaning.Its processing process is specifically as shown in Figure 1：
Step is 1.：Manipulator feeding from magazine；
Step is 2.：Manipulator moves to coating/cleaning platform gluing by be processed；
Step 3.~4.：After the completion of gluing, manipulator moves on to be processed on processing stations；
Step 5.~6.：After the completion of laser processing, manipulator moves to coating/cleaning platform by machined, is cleaned
And it is dry；
Step 7.~8.：After the completion of cleaning-drying, sends chip back to magazine, complete a fabrication cycles.
Wherein, protection liquid coating procedure include step 2., 3. manufacturing process, when substantially increasing the beat of laser cutting
Between, consumables cost and Design of Mechanical Structure cost etc..
Utility model content
The purpose of the utility model is to overcome the shortcomings of the prior art, a kind of quaternary LED wafer is provided exempts from coating and swash
Optical surface cutter device can save coating protection liquid process, to effectively promote cutting efficiency.
The purpose of this utility model is achieved through the following technical solutions：
Quaternary LED wafer is exempted to coat laser surface cutter device, and feature is：The lens combination light path output arrangement the of picosecond laser
One speculum has been sequentially arranged beam expanding lens, the first polarization wave plate, polarization spectro piece, second anti-on the first speculum reflected light path
It includes one-dimensional laser beam beam splitting to penetrate mirror, the second polarization wave plate, third speculum and laser cutting head, the laser cutting head
The top of element and laser condensing lens, laser condensing lens one-dimensional laser beam beam splitting member is installed by position rotation regulating mechanism
Part can adjust light splitting light-beam position by adjusting position rotation regulating mechanism, and the lens combination light path output of laser condensing lens, which is right against, to be waited for
The surface of quaternary LED wafer product on processing platform.
Further, above-mentioned quaternary LED wafer is exempted to coat laser surface cutter device, wherein first polarized wave
Piece is 1/2 λ wave plates.
Further, above-mentioned quaternary LED wafer is exempted to coat laser surface cutter device, wherein second polarized wave
Piece is 1/2 λ wave plates.
Further, above-mentioned quaternary LED wafer is exempted to coat laser surface cutter device, wherein the beam expanding lens and skin
The distance of second laser exit is 20cm~50cm.
Further, above-mentioned quaternary LED wafer is exempted to coat laser surface cutter device, wherein the laser condensing lens
Lower section is equipped with getter device.
The utility model has significant advantages and beneficial effects compared with prior art, embodies in the following areas：
1. constituting laser processing device using picosecond laser, coating protection liquid can be saved when cutting quaternary LED wafer
Process exempts from quaternary LED wafer to coat laser surface cutting processing, to effectively promote cutting efficiency；
2. picosecond laser cutting crystal wafer generates more small-scale heat affected area, micro-crack, remelting recrystallization can be changed
It is kind；At MW grades, processing generates nano level cutting dust and is easier to collect after being gasified the peak power of picosecond laser；Picosecond plus
Work generates ionic product, and the hardened tumor of not remelting does not generate complex compound, easily cleans hand by exhausting, air blowing, washing etc.
Section is collected processing；
3. the distance that the beam expanding lens of light path system is exported apart from picosecond laser is 20cm~50cm, different installation sites
Different laser focal beam spot effects is had, laser beam can obtain good laser facula by collimator and extender and after focusing
Quality, rational design is so that laser obtains excellent results to the scribing of quaternary LED wafer；
4. the light beam by one-dimensional laser beam beam splitting element can adjust the opposite of light splitting light beam spot by adjusting knob
Position, regulating relative position can be formed after multi beam low power laser high-temperature fusion gasification quaternary LED wafer after scribing
Slag all siphoned away by getter device, form the Cutting Road of scribing without Hui Rong, scribing sliver section smooth in appearance is without nigrescence
Phenomenon.
Description of the drawings
Fig. 1：The processing process schematic diagram of background technology；
Fig. 2：The processing process schematic diagram of the utility model；
Fig. 3：The structural schematic diagram of utility model device.
Specific implementation mode
For a clearer understanding of the technical features, objectives and effects of the utility model, existing be described in detail specifically
Embodiment.
As shown in figure 3, quaternary LED wafer is exempted to coat laser surface cutter device, in the lens combination light path output of picosecond laser 1
It arranges the first speculum 2, beam expanding lens 3, first has been sequentially arranged on 2 reflected light path of the first speculum and has polarized wave plate 4, polarization spectro
Piece 5, the second speculum 6, second polarization wave plate 7, third speculum 8 and laser cutting head, laser cutting head include one-dimensional sharp
The top of light beam splitter element 9 and laser condensing lens 10, laser condensing lens 10 is one-dimensional by the installation of position rotation regulating mechanism
Laser beam beam splitting element 9 can adjust light splitting light-beam position, the light of laser condensing lens 10 by adjusting position rotation regulating mechanism
Road output end is right against the surface of the quaternary LED wafer product on platform 12 to be processed.
Wherein, the first polarization wave plate 4 is 1/2 λ wave plates, and the second polarization wave plate 7 is 1/2 λ wave plates.Beam expanding lens 3 with picosecond swash
The distance of light device outlet is 20cm~50cm.10 lower section of laser condensing lens is equipped with getter device 11.
Above-mentioned apparatus be used for quaternary LED wafer exempt from coat laser surface cutting when, picosecond laser 1 launch 1064 or
Light beam reflection is incident on beam expanding lens 3 by the laser of 532nm wave bands by the first speculum 2, and beam expanding lens 3 goes out with picosecond laser
The distance of mouth is 20cm~50cm, and beam expanding lens 3 is collimated and expanded to laser, improved the collimation of laser, make the light of transmitting
Beam diameter increases；It is again incident on the first polarization wave plate 4 and polarization spectro piece 5, by rotatory polarization wave plate angle to laser power
Decay；It is incident on the second polarization wave plate 7 through the second speculum 6 again, passes through rotatory polarization wave plate angular adjustment laser beam
Polarization state；It is incident on laser cutting head through third speculum 8 again, the one-dimensional laser beam beam splitting element 9 in laser cutting head is right
Laser beam is divided, and light splitting light-beam position can be adjusted by adjusting position rotation regulating mechanism, realizes that multiple beam continuously adds
Work, the multiple beam after light splitting enter laser condensing lens 10, and laser condensing lens 10 make light beam focus on quaternary LED to be processed
The surface of product wafer is processed with moment melted material.Getter device 11 by laser high-temperature fusion gasify quaternary LED wafer
The slag formed after material is all siphoned away from suction hole, and the negative pressure of 11 interface of getter device is 0.5MPa~1MPa.
The utility model cuts quaternary LED wafer using picosecond laser, coating protection liquid process can be saved, to have
Effect promotes cutting efficiency.
When exempting to coat laser surface cutting to quaternary LED wafer, as shown in Fig. 2, processing process step is：
Step is 1.：Manipulator feeding from magazine；
Step is 2.：Manipulator moves to be processed on processing stations；
Step 3.~4.：After the completion of laser processing, manipulator moves to coating/cleaning platform by machined, is cleaned
And it is dry；
Step 5.~6.：After the completion of cleaning-drying, sends chip back to magazine, complete a fabrication cycles.
The cutting process of picosecond laser releases energy within the picosecond time, is used for decomposing material, the remote super various materials of energy
Material absorbs threshold value, and heat affected area can reduce, and micro-crack, remelting recrystallization can be improved；Picosecond cutting narrow spaces obtain
The peak power for obtaining bigger, can generate smaller dust particles with direct gasification material；In addition the ionic production of generation is processed
Object, it is not easy to which remelting, hardened, tumor generate complex compound, can be with by the cleaning means of air blowing plus exhausting and washing
Dust is collected and is handled.
The distance that the beam expanding lens of light path system is exported apart from picosecond laser is 20cm~50cm.Laser beam expanding lens installation position
It is equipped with exquisite, different installation site and has different laser focal beam spot effects.Beam expanding lens, which is realized, emits laser
Laser is collimated and is expanded, and collimation is the secondary collimation for improving laser, and it is that the beam diameter for emitting laser adds to expand
Greatly, laser beam can obtain good laser facula quality, above-mentioned rational design ability by collimator and extender and after focusing
It obtains laser and excellent results is obtained to the scribing of quaternary LED wafer.
One-dimensional laser beam beam splitting element 9, the 9 lower section installation of one-dimensional laser beam beam splitting element are installed in laser cutting head
Laser condensing lens 10 will produce a large amount of dust in quaternary LED wafer scribing processes, especially for virose material,
Continuous batch produces and processes, and the dust of processing quaternary LED wafer can be easy pollution laser condensing lens 10, and getter device 11 is to focusing
Eyeglass plays a protective role, and extends the service life of focusing lens, reduces processing cost.
The opposite position of light splitting light beam spot can be adjusted by adjusting knob by the light beam of one-dimensional laser beam beam splitting element 9
It sets.Especially for scribing hemisection processing technology, scribing is that one is formed above laser action to quaternary LED wafer Cutting Road directly
Line, 7 μm~20 μm of line width, hole multiple beam can influence the effect of scribing in quaternary LED wafer relative position after laser focusing, adjust
Having saved relative position can make the slag formed after multi beam low power laser high-temperature fusion gasification quaternary LED wafer after scribing logical
It crosses getter device all to siphon away, forms the Cutting Road of scribing without Hui Rong, scribing sliver section smooth in appearance is without nigrescence phenomenon.If
Adjust inappropriate, scribing Cutting Road appearance be easy to cause Hui Rong, and depth of cut is not enough and Cutting Road both sides black influences processing
Quality.
In conclusion the utility model picosecond laser process quaternary LED wafer, with nanosecond it is ultraviolet cutting compared with, picosecond swash
Light cutting crystal wafer generates more small-scale heat affected area, and micro-crack, remelting recrystallization can be improved；The peak value of picosecond laser
At MW grades, processing generates nano level cutting dust and is easier to collect after being gasified power；Picosecond processing generate ionic product,
The hardened tumor of not remelting, does not generate complex compound, is easily collected processing by cleaning means such as exhausting, air blowing, washings；It adopts
Processing flow can be effectively shortened with the technique, saves pitch time and consumables cost.
It should be noted that：Above description is merely a prefered embodiment of the utility model, is not limited to this practicality
Novel interest field；Above description simultaneously, should can be illustrated and implement for the special personage of correlative technology field, therefore its
It should be included in claim without departing from the lower equivalent change or modification completed of the revealed spirit of the utility model
In.
Claims (5)
1. quaternary LED wafer is exempted to coat laser surface cutter device, it is characterised in that：The lens combination light path output of picosecond laser (1)
Arrange the first speculum (2), be sequentially arranged on the first speculum (2) reflected light path beam expanding lens (3), first polarization wave plate (4),
Polarization spectro piece (5), the second speculum (6), the second polarization wave plate (7), third speculum (8) and laser cutting head, it is described
Laser cutting head includes one-dimensional laser beam beam splitting element (9) and laser condensing lens (10), and the top of laser condensing lens (10) is logical
It crosses position rotation regulating mechanism and one-dimensional laser beam beam splitting element (9) is installed, can be adjusted by adjusting position rotation regulating mechanism
It is divided light-beam position, the lens combination light path output of laser condensing lens (10) is right against the production of the quaternary LED wafer on platform to be processed (12)
The surface of product.
2. quaternary LED wafer according to claim 1 is exempted to coat laser surface cutter device, it is characterised in that：Described
One polarization wave plate (4) is 1/2 λ wave plates.
3. quaternary LED wafer according to claim 1 is exempted to coat laser surface cutter device, it is characterised in that：Described
Two polarization wave plates (7) are 1/2 λ wave plates.
4. quaternary LED wafer according to claim 1 is exempted to coat laser surface cutter device, it is characterised in that：The expansion
Shu Jing (3) is 20cm~50cm at a distance from picosecond laser outlet.
5. quaternary LED wafer according to claim 1 is exempted to coat laser surface cutter device, it is characterised in that：It is described to swash
Getter device (11) is equipped with below light focus lamp (10).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721889277.XU CN207746565U (en) | 2017-12-29 | 2017-12-29 | Quaternary LED wafer is exempted to coat laser surface cutter device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721889277.XU CN207746565U (en) | 2017-12-29 | 2017-12-29 | Quaternary LED wafer is exempted to coat laser surface cutter device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207746565U true CN207746565U (en) | 2018-08-21 |
Family
ID=63151242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721889277.XU Active CN207746565U (en) | 2017-12-29 | 2017-12-29 | Quaternary LED wafer is exempted to coat laser surface cutter device |
Country Status (1)
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| CN (1) | CN207746565U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107971645A (en) * | 2017-12-29 | 2018-05-01 | 苏州德龙激光股份有限公司 | Quaternary LED wafer is exempted to coat laser surface cutter device and its method |
| CN110729186A (en) * | 2019-10-24 | 2020-01-24 | 东莞记忆存储科技有限公司 | Processing method for wafer cutting and separating |
-
2017
- 2017-12-29 CN CN201721889277.XU patent/CN207746565U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107971645A (en) * | 2017-12-29 | 2018-05-01 | 苏州德龙激光股份有限公司 | Quaternary LED wafer is exempted to coat laser surface cutter device and its method |
| CN110729186A (en) * | 2019-10-24 | 2020-01-24 | 东莞记忆存储科技有限公司 | Processing method for wafer cutting and separating |
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