CN106735917A - A kind of method that high-rate laser etches sapphire eyeglass - Google Patents
A kind of method that high-rate laser etches sapphire eyeglass Download PDFInfo
- Publication number
- CN106735917A CN106735917A CN201611103747.5A CN201611103747A CN106735917A CN 106735917 A CN106735917 A CN 106735917A CN 201611103747 A CN201611103747 A CN 201611103747A CN 106735917 A CN106735917 A CN 106735917A
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- CN
- China
- Prior art keywords
- sapphire
- eyeglass
- fixture
- processing
- sheet
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
- B23K26/123—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an atmosphere of particular gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
- B23K26/126—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an atmosphere of gases chemically reacting with the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/361—Removing material for deburring or mechanical trimming
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Laser Beam Processing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A kind of method that the present invention etches sapphire eyeglass for high-rate laser, when being cut to sapphire sheet, can be passed through auxiliary gas SF6, sapphire main component is Al2O3, high temperature is produced when picosecond laser cuts to sapphire sheet, now SF6In fluorine ion can be reacted with aluminium ion because a SF6Contain 6 fluorine ions in molecule, therefore can be reacted with 6 aluminium ions, therefore use SF6Consumption can be reduced as the more existing frequently-used nitrogen of auxiliary gas, and the reproducibility of fluorine is stronger than the reproducibility of nitrogen, therefore the speed that fluorine ion reacts with aluminium ion is faster, therefore use SF6Cutting speed can be accelerated, and while cutting speed is accelerated the burr of sapphire lens periphery can be avoided to produce.
Description
Technical field
Sapphire eyeglass is etched the present invention relates to sapphire machining eyeglass technical field, more particularly to a kind of high-rate laser
Method.
Background technology
Sapphire material has very special characteristic：It is extremely corrosion-resistant, extremely hard, there is high transmission rate etc. to visible ray, because
This is widely used on chemical industry and optics.Growing demand has been inverted and the sapphire of low cost has been supplied
Demand, meanwhile, the sapphire of low cost also promotes new application field and gradually rises, as the camera of smart mobile phone is protected
Mirror, mobile phone faceplate etc., but sapphire hardness makes to be machined with certain difficulty to sapphire.The indigo plant that mobile lens are used is precious
Stone lens dimension is smaller, is typically to carry out cutting on big sapphire sheet material in the process for producing sapphire eyeglass to be polished into conjunction
The sapphire eyeglass of lattice, is to use picosecond laser cutter compared with widespread practice now.
Psec cutter when being cut to sapphire, the high temperature that its laser for sending brings make sapphire melt so as to
The effect of cutting is realized, but the still jagged application being unfavorable for below in sapphire edge is installed and cut in cutting process
Efficiency is not high enough.
The content of the invention
Periphery is jagged and inefficient when the purpose of the present invention is directed to existing psec cutter cuts sapphire asks
Topic, there is provided a kind of method that high-rate laser etches sapphire eyeglass.
A kind of method that high-rate laser etches sapphire eyeglass, comprises the following steps：
1）The sapphire sheet of polishing both surfaces is fixed on fixture, fixture is installed on the workbench of picosecond laser；
2）Fixture is delivered to processing and is positioned by loading and unloading system, is now passed through auxiliary gas SF6, the processing head at processing is to blue precious
Flag is cut, control system control processing head cutting track；
3）Fixture after loading and unloading system will cut delivers to purged and packed, and sapphire eyeglass and the clout in fixture are separated.
Wherein in one embodiment, the step 1）Middle sapphire sheet is circular or rectangle, the work(of picosecond laser
Rate is 60-85W.
Wherein in one embodiment, the step 2）Positioned to sapphire sheet locating segmentation position at middle processing, in indigo plant
Sapphire eyeglass is cut out on jewel piece, the sapphire eyeglass is uniformly distributed arrangement in sapphire sheet.
Wherein in one embodiment, the step 2）Middle processing head is single head or double end, the processing of the processing head
Track is along the shape of sapphire eyeglass and arrangement successively interruption cutting.
Wherein in one embodiment, the step 2）Middle SF6Intake velocity be 200-300sccm, the psec swash
Light device switch time delay 100-150us, redirects time delay 150-250us.
Using above-mentioned technical proposal when being cut to sapphire sheet, auxiliary gas SF can be passed through6, it is sapphire main
Composition is Al2O3, high temperature is produced when picosecond laser cuts to sapphire sheet, now SF6In fluorine ion meeting and aluminium ion
React, because a SF6Contain 6 fluorine ions in molecule, therefore can be reacted with 6 aluminium ions, therefore use
SF6Consumption can be reduced as the more existing frequently-used nitrogen of auxiliary gas, and the reproducibility of fluorine is stronger than the reproducibility of nitrogen, therefore fluorine
The speed that ion reacts with aluminium ion faster, therefore uses SF6Cutting speed can be accelerated, and accelerating cutting speed
While the burr of sapphire lens periphery can be avoided to produce.
Specific embodiment
With reference to implementation method, the present invention is further detailed explanation.
A kind of method that high-rate laser etches sapphire eyeglass, comprises the following steps：
1）The sapphire sheet of polishing both surfaces is fixed on fixture, fixture is installed on the workbench of picosecond laser；2）Folder
Tool is delivered to processing and is positioned by loading and unloading system, is now passed through auxiliary gas SF6, the processing head at processing carries out to sapphire sheet
Cutting, control system control processing head cutting track；3）Fixture after loading and unloading system will cut delivers to purged and packed, will press from both sides
Sapphire eyeglass and clout in tool are separated.The sapphire sheet of polishing both surfaces is fixed on fixture and is cut, excision forming
Two sides need not process again afterwards, can directly pack shipment.Sapphire eyeglass and clout after the completion of cutting also on fixture,
Therefore need to separate sapphire eyeglass and the clout on fixture.Also include vacuum absorption device on loading and unloading system, can not only
Enough stationary fixtures simultaneously can be in clean cut operation process residue and dust.
Picosecond laser laser is precious depending on cutting into sapphire eyeglass on piece in indigo plant according to setting track, and laser is in sapphire sheet
Upper generation high temperature needs to be passed through auxiliary gas, actually aids in gas to be chemically reacted with sapphire, so as to realize cutting
Effect, therefore the influence of the selection to the smooth of the edge and cutting speed of the sapphire eyeglass after the completion of cutting of auxiliary gas is non-
Chang great, the conventional auxiliary gas of prior art is nitrogen, nitrogen under the high temperature action with sapphire in Al2O3Generation chemistry is anti-
Should, because sapphire lens dimension is smaller, therefore use N2Sapphire lens periphery still hairiness during as auxiliary gas reaction
Thorn, is unfavorable for installation of the sapphire eyeglass later stage again on finished product.Now use SF6Occur as assisted reaction gas and sapphire anti-
Should, because the SF of a molecule6In contain 6 fluorine ions, and the oxidisability of fluorine is better than nitrogen, therefore SF6With Al2O3Reaction speed
Degree is than N2With Al2O3Reaction speed it is fast, and SF6Amount ratio N2Consumption it is many less.
Wherein in one embodiment, the step 1）Middle sapphire sheet is circular or rectangle, the work(of picosecond laser
Rate is 60-85W.Sapphire sheet after treatment can be circular or this kind of regular shape of rectangle, on the one hand facilitate the throwing of early stage
Light operation, cutting of the another aspect sapphire eyeglass in sapphire sheet can conveniently be laid out, and can facilitate the processing of processing head
The setting of positioning and cutting track.
Wherein in one embodiment, the step 2）Positioned to sapphire sheet locating segmentation position at middle processing, in indigo plant
Sapphire eyeglass is cut out on jewel piece, the sapphire eyeglass is uniformly distributed arrangement in sapphire sheet.Sapphire eyeglass exists
It is evenly distributed beneficial to the setting that cutting track is processed at processing in sapphire sheet.
Wherein in one embodiment, the step 2）Middle processing head is single head or double end, the processing of the processing head
Track is along the shape of sapphire eyeglass and arrangement successively interruption cutting.Processing head be able to can also be used double using single head
Head, cutting speed can be then accelerated using double end, then facilitate the setting of psec cutter to operate using single head.
Wherein in one embodiment, the step 2）Middle SF6Intake velocity be 200-300sccm, the psec swash
Light device switch time delay 100-150us, redirects time delay 150-250us.
Embodiment 1
1）The circular sapphire piece of polishing both surfaces is fixed on fixture, fixture is installed on the workbench of picosecond laser,
The power of picosecond laser is 60W；2）Fixture is delivered to processing and is positioned by loading and unloading system, is now passed through auxiliary gas SF6, SF6
Intake velocity be 200sccm, the single head processing head at processing cuts to sapphire sheet, and control system control processing head is cut
Track is cut, picosecond laser switch time delay 100us redirects time delay 150us；3）Fixture after loading and unloading system will cut is delivered to
Purged and packed, sapphire eyeglass and the clout in fixture are separated.
Embodiment 2
1）The rectangle sapphire sheet of polishing both surfaces is fixed on fixture, fixture is installed on the workbench of picosecond laser,
The power of picosecond laser is 85W；2）Fixture is delivered to processing and is positioned by loading and unloading system, is now passed through auxiliary gas SF6, SF6
Intake velocity be 300sccm, the single head processing head at processing cuts to sapphire sheet, and control system control processing head is cut
Track is cut, picosecond laser switch time delay 150us redirects time delay 250us；3）Fixture after loading and unloading system will cut is delivered to
Purged and packed, sapphire eyeglass and the clout in fixture are separated.
Embodiment 3
1）The rectangle sapphire sheet of polishing both surfaces is fixed on fixture, fixture is installed on the workbench of picosecond laser,
The power of picosecond laser is 70W；2）Fixture is delivered to processing and is positioned by loading and unloading system, is now passed through auxiliary gas SF6, SF6
Intake velocity be 250sccm, the double end processing head at processing cuts to sapphire sheet, and control system control processing head is cut
Track is cut, picosecond laser switch time delay 125us redirects time delay 200us；3）Fixture after loading and unloading system will cut is delivered to
Purged and packed, sapphire eyeglass and the clout in fixture are separated.
Specific embodiment of the invention is the foregoing is only, but architectural feature of the invention is not limited to this, any this area
In the field of the invention, the change or modification made are encompassed by the scope of the claims of the invention technical staff.
Claims (5)
1. a kind of method that high-rate laser etches sapphire eyeglass, it is characterised in that comprise the following steps：
1）The sapphire sheet of polishing both surfaces is fixed on fixture, fixture is installed on the workbench of picosecond laser；
2）Fixture is delivered to processing and is positioned by loading and unloading system, is now passed through auxiliary gas SF6, the processing head at processing is to blue precious
Flag is cut, control system control processing head cutting track；
3）Fixture after loading and unloading system will cut delivers to purged and packed, and sapphire eyeglass and the clout in fixture are separated.
2. a kind of method that high-rate laser etches sapphire eyeglass according to claim 1, it is characterised in that：The step
1）Middle sapphire sheet is circular or rectangle, and the power of picosecond laser is 60-85W.
3. a kind of method that high-rate laser etches sapphire eyeglass according to claim 1, it is characterised in that：The step
2）Positioning cuts out sapphire eyeglass, the sapphire to sapphire sheet locating segmentation position in sapphire sheet at middle processing
Eyeglass is uniformly distributed arrangement in sapphire sheet.
4. a kind of method that high-rate laser etches sapphire eyeglass according to claim 1, it is characterised in that：The step
2）Middle processing head is single head or double end, the machining locus of the processing head be along the shape of sapphire eyeglass and arrangement successively
Interruption cutting.
5. a kind of method that high-rate laser etches sapphire eyeglass according to claim 1, it is characterised in that：The step
2）Middle SF6Intake velocity be 200-300sccm, the picosecond laser switch time delay 100-150us, redirect time delay 150-
250us。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611103747.5A CN106735917A (en) | 2016-12-05 | 2016-12-05 | A kind of method that high-rate laser etches sapphire eyeglass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611103747.5A CN106735917A (en) | 2016-12-05 | 2016-12-05 | A kind of method that high-rate laser etches sapphire eyeglass |
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| Publication Number | Publication Date |
|---|---|
| CN106735917A true CN106735917A (en) | 2017-05-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611103747.5A Pending CN106735917A (en) | 2016-12-05 | 2016-12-05 | A kind of method that high-rate laser etches sapphire eyeglass |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107570876A (en) * | 2017-10-16 | 2018-01-12 | 江南大学 | A kind of processing method of induced with laser KOH chemical reactions etching and cutting sapphire |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5270498A (en) * | 1975-12-09 | 1977-06-11 | Mitsubishi Electric Corp | Method for digging micro pore in silicon crystal plate |
| US20060249480A1 (en) * | 2003-03-04 | 2006-11-09 | Adrian Boyle | Laser machining using an active assist gas |
| CN101983825A (en) * | 2010-10-09 | 2011-03-09 | 苏州德龙激光有限公司 | Picosecond laser scribing device for light emitting diode (LED) wafer |
| CN104148815A (en) * | 2014-07-29 | 2014-11-19 | 蓝思科技股份有限公司 | Sapphire/ceramic lens laser-cutting method |
| CN104384728A (en) * | 2014-11-18 | 2015-03-04 | 蓝思科技股份有限公司 | Process and fixture for laser machining of sapphire panel |
-
2016
- 2016-12-05 CN CN201611103747.5A patent/CN106735917A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5270498A (en) * | 1975-12-09 | 1977-06-11 | Mitsubishi Electric Corp | Method for digging micro pore in silicon crystal plate |
| US20060249480A1 (en) * | 2003-03-04 | 2006-11-09 | Adrian Boyle | Laser machining using an active assist gas |
| CN101983825A (en) * | 2010-10-09 | 2011-03-09 | 苏州德龙激光有限公司 | Picosecond laser scribing device for light emitting diode (LED) wafer |
| CN104148815A (en) * | 2014-07-29 | 2014-11-19 | 蓝思科技股份有限公司 | Sapphire/ceramic lens laser-cutting method |
| CN104384728A (en) * | 2014-11-18 | 2015-03-04 | 蓝思科技股份有限公司 | Process and fixture for laser machining of sapphire panel |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107570876A (en) * | 2017-10-16 | 2018-01-12 | 江南大学 | A kind of processing method of induced with laser KOH chemical reactions etching and cutting sapphire |
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Application publication date: 20170531 |
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| RJ01 | Rejection of invention patent application after publication |