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CN103567642A - Sapphire cutting means - Google Patents

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Publication number
CN103567642A
CN103567642A CN 201210280285 CN201210280285A CN103567642A CN 103567642 A CN103567642 A CN 103567642A CN 201210280285 CN201210280285 CN 201210280285 CN 201210280285 A CN201210280285 A CN 201210280285A CN 103567642 A CN103567642 A CN 103567642A
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Prior art keywords
laser
cutting
ultraviolet
beam
source
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CN 201210280285
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Chinese (zh)
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CN103567642B (en )
Inventor
陈杰良
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鸿富锦精密工业(深圳)有限公司
鸿海精密工业股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2203/00Materials to be soldered, welded or cut
    • B23K2203/50Inorganic material, e.g. metals, not provided for in B23K2203/02 – B23K2203/26
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved

Abstract

The invention provides a sapphire cutting device. The sapphire cutting device comprises an ultraviolet laser source and a collimating lens, wherein the ultraviolet laser source is used for sending out a laser beam; the collimating lens is used for converging the laser beam into a parallel laser beam; the parallel laser beam is used for cutting sapphire; the working wavelength range of the ultraviolet laser source is 200-400 nm. Thus, the cost can be reduced since the ultraviolet laser source and the collimating lens with lower cost are adopted for replacing diamond with higher cost. In addition, laser cutting can realize high-speed cutting, and the efficiency is improved.

Description

蓝宝石切割装置 Sapphire cutting means

技术领域 FIELD

[0001] 本发明涉及蓝宝石切割技术,特别涉及一种蓝宝石切割装置。 [0001] The present invention relates to a sapphire cutting technology, and particularly to a cutting device sapphire.

背景技术 Background technique

[0002] 目前,主要通过金刚石涂层线(diamond coated wire)切割蓝宝石,然而,一方面由于金刚石本身较为昂贵,另一方面由于是接触式切割,金刚石涂层线损耗到一定程度后需更换,造成切割成本高。 [0002] Currently, the major cutting with a diamond coated wire (diamond coated wire) sapphire, however, due to the diamond itself is expensive on the one hand, on the other hand because it is a contact-type cutter, a diamond coating line losses need to be replaced to a certain extent, resulting in high cutting costs. 另外,靠金刚石涂层线来回磨损切割蓝宝石效率较低。 Further, by coating diamond wire round sapphire wear of the cutting efficiency is low.

发明内容 SUMMARY

[0003] 有鉴于此,有必要提供一种可降低成本并提高效率的蓝宝石切割装置。 [0003] In view of this, it is necessary to provide a reducing costs and increase efficiency of the cutting apparatus of sapphire.

[0004] 一种蓝宝石切割装置,其包括一紫外激光源及一准直透镜。 [0004] A sapphire cutting device, which comprises a UV laser source and collimating lens. 该紫外激光源用于发出一激光束。 The ultraviolet laser source for emitting a laser beam. 该准直透镜用于将该激光束汇聚成一平行激光束。 The collimator lens for converging a laser beam parallel to the laser beam. 该平行激光束用于切割蓝宝石。 The parallel laser beam is used to cut sapphire. 该紫外激光源的工作波段为200-400纳米。 The ultraviolet laser source operating wavelength band of 200-400 nanometers.

[0005] 如此,由于采用成本较低的该紫外激光源及该准直透镜代替成本较高的金刚石,可降低成本。 [0005] Thus, thanks to the low cost of the ultraviolet laser source and the collimator lens instead of the high cost of diamond, the cost can be reduced. 另外,激光切割可实现高速切割,提高效率。 Further, high-speed laser cutting can be cut, to improve efficiency.

附图说明 BRIEF DESCRIPTION

[0006] 图1为本发明较佳实施方式的蓝宝石切割装置的立体示意图。 Perspective view [0006] FIG 1 preferred embodiment of the present invention, a sapphire cutting apparatus.

[0007] 图2为图1的蓝宝石切割装置的部分平面示意图。 [0007] FIG. 2 is a schematic partial plan view of the sapphire cutting device 1 of FIG.

[0008] 主要元件符号说明 [0008] Main reference numerals DESCRIPTION

Figure CN103567642AD00031

如下具体实施方式将结合上述附图进一步说明本发明。 The following detailed description in conjunction with the accompanying drawings, the present invention is described.

具体实施方式 detailed description

[0009] 请参阅图1-2,本发明较佳实施方式的蓝宝石切割装置10包括一紫外激光源100及一准直透镜200。 [0009] Referring to FIG 1-2, the present invention is a sapphire preferred embodiment of the cutting device 10 comprises an ultraviolet laser source 100 and collimating lens 200. 该紫外激光源100用于发出一激光束110。 The ultraviolet laser light source 100 for emitting a laser beam 110. 该准直透镜200用于将该激光束110汇聚成一平行激光束120。 The collimator lens 200 for converging the 110 a parallel laser beam 120 laser beams. 该平行激光束120用于切割蓝宝石20。 The parallel laser beam 120 for cutting the sapphire 20. 该紫外激光源100的工作波段为200-400纳米。 The ultraviolet laser source 100 is operating wavelength band 200-400 nanometers.

[0010] 如此,由于采用成本较低的该紫外激光源100及该准直透镜200代替成本较高的金刚石,可降低成本。 [0010] Thus, since the higher the collimator lens 100 and 200 instead of lower-cost diamond cost of the UV laser source, cost can be reduced. 另外,激光切割可实现高速切割,提高效率。 Further, high-speed laser cutting can be cut, to improve efficiency.

[0011] 该紫外激光源100为准分子激光源,或者采用激光二极管或者高功率发光二极管。 [0011] The ultraviolet laser source 100 is an excimer laser light source, or a high-power laser diode or a light emitting diode.

[0012] 该紫外激光源100优选的工作波长为350-390纳米。 [0012] 100 is preferably the ultraviolet laser source operating wavelength of 350-390 nm.

[0013] 具体的,该蓝宝石切割装置还包括一外壳300。 [0013] Specifically, the cutting device further comprises a sapphire housing 300. 该外壳300形成有一收容空间310。 The housing 300 is formed with a receiving space 310. 该收容空间310具有一开口312。 The receiving space 310 has an opening 312. 该紫外激光源100收容于该收容空间310内,并朝该开口312发射该激光束110。 The ultraviolet laser source 100 is received in the receiving space 310, and emits the laser beam 110 toward the opening 312. 该准直透镜200封闭该开口312,并汇聚该激光束110。 The collimator lens 200 close the opening 312, and converging the laser beam 110.

[0014] 具体的,该蓝宝石切割装置10还包括一工作台400。 [0014] Specifically, the sapphire cutting device 10 further includes a table 400. 该工作台400包括一承载台410、一个三维移动臂420及一控制系统430。 The table 400 comprises a carrying platform 410, a three-dimensional movement of the arm 420, and a control system 430. 该承载台410用于承载定位该蓝宝石20。 Table 410 for carrying the carrying positioning the sapphire 20. 该承载台410形成有一缝隙412。 The carrier 410 has a slit 412 forming stations. 该蓝宝石20横跨该缝隙412设置。 The sapphire 20 across the slit 412 is provided. 该三维移动臂420用于固持该外壳300。 The three-dimensional movement of the arm 420 for holding the housing 300. 该控制系统430用于驱动该三维移动臂420按预定的轨迹移动并控制该紫外激光源100的开启与关闭从而切割定位于该承载台410上的该蓝宝石20。 The control system 430 for driving three-dimensional movement of the arm 420 moves a predetermined trajectory and controlling the ultraviolet laser source on and off to cut 100 positioned on the carrying platform 410 of the sapphire 20. 该预定的轨迹落入该缝隙412内,如此,该蓝宝石切割装置10不会切割到该承载台410。 It falls within the predetermined trajectory of the slot 412, so that the sapphire cutting means 10 does not cut into the carrier station 410.

[0015] 总之,本技术领域的普通技术人员应当认识到,以上的实施方式仅是用来说明本发明,而并非用作为对本发明的限定,只要在本发明的实质精神范围之内,对以上实施例所作的适当改变和变化都落在本发明要求保护的范围之内。 [0015] In summary, those skilled in the art should appreciate that the above embodiments are only used to illustrate the present invention and are not used to limit the present invention, as long as within the true spirit of the invention, the above the appropriate modifications and variations within the embodiments of the present invention is made to fall within the scope of claims.

Claims (6)

  1. 1.一种蓝宝石切割装置,其特征在于包括一紫外激光源及一准直透镜;该紫外激光源用于发出一激光束;该准直透镜用于将该激光束汇聚成一平行激光束;该平行激光束用于切割蓝宝石;该紫外激光源的工作波段为200-400纳米。 A sapphire cutting apparatus, comprising a UV laser source and collimating lens; the UV laser light source for emitting a laser beam; a collimator lens for dividing the laser beam converging to a parallel laser beam; the parallel laser beams for cutting the sapphire; operating band of the ultraviolet laser source is 200-400 nm.
  2. 2.如权利要求1所述的蓝宝石切割装置,其特征在于,该紫外激光源为准分子激光源。 2. The cutting apparatus according sapphire claimed in claim 1, wherein the ultraviolet laser source is an excimer laser light source.
  3. 3.如权利要求1所述的蓝宝石切割装置,其特征在于,该紫外激光源采用激光二极管或者高功率发光二极管。 The sapphire claim 1 cutting apparatus, wherein the ultraviolet laser source of high power laser diode or a light emitting diode.
  4. 4.如权利要求1所述的蓝宝石切割装置,其特征在于,该紫外激光源的工作波长为350-390 纳米。 Sapphire said cutting device as claimed in claim 1, wherein the ultraviolet laser source operating wavelength is 350-390 nm.
  5. 5.如权利要求1所述的蓝宝石切割装置,其特征在于,该蓝宝石切割装置还包括一外壳;该外壳形成有一收容空间;该收容空间具有一开口;该紫外激光源收容于该收容空间内,并用于朝该开口发射该激光束;该准直透镜封闭该开口。 5. The cutting apparatus according sapphire claimed in claim 1, wherein the cutting device further comprises a sapphire housing; the housing is formed with a receiving space; the receiving space has an opening; the UV laser light source received in the receiving space and for emitting the laser beam toward the opening; the collimator lens closing the opening.
  6. 6.如权利要求5所述的蓝宝石切割装置,其特征在于,该蓝宝石切割装置还包括一工作台;该工作台包括一承载台、一个三维移动臂及一控制系统;该承载台用于承载定位该蓝宝石;该承载台形成有一缝隙;该蓝宝石横跨该缝隙设置;该三维移动臂用于固持该外壳;该控制系统用于驱动该三维移动臂按预定的轨迹移动并控制该紫外激光源的开启与关闭从而切割定位于该承载台上的该蓝宝石;该预定的轨迹落入该缝隙内。 6. claim 5 sapphire cutting apparatus, wherein the apparatus further includes a sapphire cutting table; said table comprising a table carrier, a three-dimensional movement and a control arm; carrying platform for carrying positioning the sapphire; carrying platform formed with a slit; the sapphire disposed across the slot; the three-dimensional moving arm for holding the housing; the control system for driving three-dimensional movement of the arm is moved by a predetermined trajectory and controlling the ultraviolet laser source to cut the opening and closing of the sapphire is positioned in the supporting table; the trajectory falls within the predetermined gap.
CN 201210280285 2012-08-08 2012-08-08 Sapphire cutting means CN103567642B (en)

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JPH09270565A (en) * 1996-04-01 1997-10-14 Kyocera Corp Semiconductor laser diode
US6437363B1 (en) * 1998-09-25 2002-08-20 Murata Manufacturing Co. Ltd. Semiconductor photonic device
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CN1761549A (en) * 2003-02-19 2006-04-19 J.P.瑟塞尔联合公司 System and method for cutting using a variable astigmatic focal beam spot
JP2007320124A (en) * 2006-05-31 2007-12-13 Sharp Corp Device and method for cutting brittle plate to be machined
CN101983825A (en) * 2010-10-09 2011-03-09 苏州德龙激光有限公司 Picosecond laser scribing device for light emitting diode (LED) wafer
CN201913386U (en) * 2010-12-30 2011-08-03 沈阳新松机器人自动化股份有限公司 Optical fiber transmission laser welding head
CN102306624A (en) * 2011-06-15 2012-01-04 江苏晶瑞半导体有限公司 Manufacturing methods for photonic crystal and semiconductor and device comprising semiconductor

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* Cited by examiner, † Cited by third party
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JPH09270565A (en) * 1996-04-01 1997-10-14 Kyocera Corp Semiconductor laser diode
US6437363B1 (en) * 1998-09-25 2002-08-20 Murata Manufacturing Co. Ltd. Semiconductor photonic device
CN1527754A (en) * 2001-01-31 2004-09-08 电子科学工业公司 Ultraviolet laser ablative patterning of microstructures in semiconductors
CN1607998A (en) * 2001-12-28 2005-04-20 杰特西斯国际有限公司 A method and related apparatus for cutting a product from a sheet material
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JP2007320124A (en) * 2006-05-31 2007-12-13 Sharp Corp Device and method for cutting brittle plate to be machined
CN101983825A (en) * 2010-10-09 2011-03-09 苏州德龙激光有限公司 Picosecond laser scribing device for light emitting diode (LED) wafer
CN201913386U (en) * 2010-12-30 2011-08-03 沈阳新松机器人自动化股份有限公司 Optical fiber transmission laser welding head
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杨伟: "高精密激光切割的理论及应用技术研究", 《中国优秀硕士学位论文全文数据库 信息科技》 *

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